JPS4874411A - - Google Patents

Info

Publication number
JPS4874411A
JPS4874411A JP47130127A JP13012772A JPS4874411A JP S4874411 A JPS4874411 A JP S4874411A JP 47130127 A JP47130127 A JP 47130127A JP 13012772 A JP13012772 A JP 13012772A JP S4874411 A JPS4874411 A JP S4874411A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47130127A
Other versions
JPS5436564B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4874411A publication Critical patent/JPS4874411A/ja
Publication of JPS5436564B2 publication Critical patent/JPS5436564B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Heat Treatment Of Nonferrous Metals Or Alloys (AREA)
  • Physical Vapour Deposition (AREA)
JP13012772A 1971-12-30 1972-12-27 Expired JPS5436564B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21420571A 1971-12-30 1971-12-30
US24363072A 1972-04-13 1972-04-13

Publications (2)

Publication Number Publication Date
JPS4874411A true JPS4874411A (ja) 1973-10-06
JPS5436564B2 JPS5436564B2 (ja) 1979-11-09

Family

ID=26908776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13012772A Expired JPS5436564B2 (ja) 1971-12-30 1972-12-27

Country Status (9)

Country Link
JP (1) JPS5436564B2 (ja)
BE (1) BE793097A (ja)
CA (1) CA971649A (ja)
DE (1) DE2262022C2 (ja)
FR (1) FR2167177A5 (ja)
GB (1) GB1379510A (ja)
IT (1) IT976172B (ja)
NL (1) NL7217204A (ja)
SE (1) SE382714B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114861A (ja) * 1974-07-30 1976-02-05 Toyo Satsushi Kogyo Kk Damiiburotsuku

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4028776C2 (de) * 1990-07-03 1994-03-10 Samsung Electronics Co Ltd Verfahren zur Bildung einer metallischen Verdrahtungsschicht und Füllen einer Kontaktöffnung in einem Halbleiterbauelement
DE4215664C1 (de) * 1992-05-13 1993-11-25 Mtu Muenchen Gmbh Verfahren zum Aufbringen von metallischen Zwischenschichten und seine Anwendung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3159556A (en) * 1960-12-08 1964-12-01 Bell Telephone Labor Inc Stabilized tantalum film resistors
BE634012A (ja) * 1961-10-03
US3261082A (en) * 1962-03-27 1966-07-19 Ibm Method of tailoring thin film impedance devices
GB1067831A (en) * 1964-03-11 1967-05-03 Ultra Electronics Ltd Improvements in thin film circuits
US3420706A (en) * 1964-06-23 1969-01-07 Bell Telephone Labor Inc Technique for fabrication of printed circuit resistors
US3558461A (en) * 1968-10-28 1971-01-26 Bell Telephone Labor Inc Thin film resistor and preparation thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114861A (ja) * 1974-07-30 1976-02-05 Toyo Satsushi Kogyo Kk Damiiburotsuku
JPS5517646B2 (ja) * 1974-07-30 1980-05-13

Also Published As

Publication number Publication date
GB1379510A (en) 1975-01-02
DE2262022A1 (de) 1973-07-05
NL7217204A (ja) 1973-07-03
JPS5436564B2 (ja) 1979-11-09
IT976172B (it) 1974-08-20
CA971649A (en) 1975-07-22
BE793097A (fr) 1973-04-16
DE2262022C2 (de) 1982-03-25
FR2167177A5 (ja) 1973-08-17
SE382714B (sv) 1976-02-09

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