GB1379510A - Technique for adjusting the temperature coefficient of resistance of tantalum aluminium alloys - Google Patents

Technique for adjusting the temperature coefficient of resistance of tantalum aluminium alloys

Info

Publication number
GB1379510A
GB1379510A GB5975672A GB5975672A GB1379510A GB 1379510 A GB1379510 A GB 1379510A GB 5975672 A GB5975672 A GB 5975672A GB 5975672 A GB5975672 A GB 5975672A GB 1379510 A GB1379510 A GB 1379510A
Authority
GB
United Kingdom
Prior art keywords
temperature coefficient
resistance
adjusting
technique
aluminium alloys
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5975672A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1379510A publication Critical patent/GB1379510A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Heat Treatment Of Nonferrous Metals Or Alloys (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

1379510 Resistors WESTERN ELECTRIC CO Inc 28 Dec 1972 [30 Dec 1971 13 April 1972] 59756/72 Heading H1S [Also in Division C7] A film of Al-Ta alloy having 25 to 60 atom per cent Al is sputtered on a substrate of, e.g. glass or ceramic and its temperature coefficient of resistance adjusted by heating at 650 to 900‹ C. for 1 to 300 minutes in an atmosphere of e.g. neon, argon or nitrogen having a maximum partial pressure of oxygen of 1 x 10<SP>-5</SP> Torr or at atmospheric pressures from 10<SP>-5</SP> to 10<SP>-7</SP> Torr. The film may be subsequently anodized.
GB5975672A 1971-12-30 1972-12-28 Technique for adjusting the temperature coefficient of resistance of tantalum aluminium alloys Expired GB1379510A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21420571A 1971-12-30 1971-12-30
US24363072A 1972-04-13 1972-04-13

Publications (1)

Publication Number Publication Date
GB1379510A true GB1379510A (en) 1975-01-02

Family

ID=26908776

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5975672A Expired GB1379510A (en) 1971-12-30 1972-12-28 Technique for adjusting the temperature coefficient of resistance of tantalum aluminium alloys

Country Status (9)

Country Link
JP (1) JPS5436564B2 (en)
BE (1) BE793097A (en)
CA (1) CA971649A (en)
DE (1) DE2262022C2 (en)
FR (1) FR2167177A5 (en)
GB (1) GB1379510A (en)
IT (1) IT976172B (en)
NL (1) NL7217204A (en)
SE (1) SE382714B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2266897A (en) * 1992-05-13 1993-11-17 Mtu Muenchen Gmbh Depositing metallic interlayers using krypton or neon; aluminium diffusion coating
GB2245596B (en) * 1990-07-03 1994-11-23 Samsung Electronics Co Ltd A method of forming a metal wiring layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114861A (en) * 1974-07-30 1976-02-05 Toyo Satsushi Kogyo Kk DAMIIBUROTSUKU

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3159556A (en) * 1960-12-08 1964-12-01 Bell Telephone Labor Inc Stabilized tantalum film resistors
BE634012A (en) * 1961-10-03
US3261082A (en) * 1962-03-27 1966-07-19 Ibm Method of tailoring thin film impedance devices
GB1067831A (en) * 1964-03-11 1967-05-03 Ultra Electronics Ltd Improvements in thin film circuits
US3420706A (en) * 1964-06-23 1969-01-07 Bell Telephone Labor Inc Technique for fabrication of printed circuit resistors
US3558461A (en) * 1968-10-28 1971-01-26 Bell Telephone Labor Inc Thin film resistor and preparation thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2245596B (en) * 1990-07-03 1994-11-23 Samsung Electronics Co Ltd A method of forming a metal wiring layer
GB2266897A (en) * 1992-05-13 1993-11-17 Mtu Muenchen Gmbh Depositing metallic interlayers using krypton or neon; aluminium diffusion coating
GB2266897B (en) * 1992-05-13 1996-04-17 Mtu Muenchen Gmbh Process for depositing metallic interlayers

Also Published As

Publication number Publication date
DE2262022A1 (en) 1973-07-05
NL7217204A (en) 1973-07-03
JPS5436564B2 (en) 1979-11-09
IT976172B (en) 1974-08-20
CA971649A (en) 1975-07-22
JPS4874411A (en) 1973-10-06
BE793097A (en) 1973-04-16
DE2262022C2 (en) 1982-03-25
FR2167177A5 (en) 1973-08-17
SE382714B (en) 1976-02-09

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee