SE382714B - SET TO REGULATE THE TEMPERATURE COEFFICIENT FOR THE RESISTANCE IN FILMS OF MASTERED TANTAL ALLOYS. - Google Patents

SET TO REGULATE THE TEMPERATURE COEFFICIENT FOR THE RESISTANCE IN FILMS OF MASTERED TANTAL ALLOYS.

Info

Publication number
SE382714B
SE382714B SE1612172A SE1612172A SE382714B SE 382714 B SE382714 B SE 382714B SE 1612172 A SE1612172 A SE 1612172A SE 1612172 A SE1612172 A SE 1612172A SE 382714 B SE382714 B SE 382714B
Authority
SE
Sweden
Prior art keywords
tantal
mastered
alloys
regulate
films
Prior art date
Application number
SE1612172A
Other languages
Swedish (sv)
Inventor
J M Chilton
D Jaffe
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE382714B publication Critical patent/SE382714B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Heat Treatment Of Nonferrous Metals Or Alloys (AREA)
  • Physical Vapour Deposition (AREA)
SE1612172A 1971-12-30 1972-12-11 SET TO REGULATE THE TEMPERATURE COEFFICIENT FOR THE RESISTANCE IN FILMS OF MASTERED TANTAL ALLOYS. SE382714B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21420571A 1971-12-30 1971-12-30
US24363072A 1972-04-13 1972-04-13

Publications (1)

Publication Number Publication Date
SE382714B true SE382714B (en) 1976-02-09

Family

ID=26908776

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1612172A SE382714B (en) 1971-12-30 1972-12-11 SET TO REGULATE THE TEMPERATURE COEFFICIENT FOR THE RESISTANCE IN FILMS OF MASTERED TANTAL ALLOYS.

Country Status (9)

Country Link
JP (1) JPS5436564B2 (en)
BE (1) BE793097A (en)
CA (1) CA971649A (en)
DE (1) DE2262022C2 (en)
FR (1) FR2167177A5 (en)
GB (1) GB1379510A (en)
IT (1) IT976172B (en)
NL (1) NL7217204A (en)
SE (1) SE382714B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114861A (en) * 1974-07-30 1976-02-05 Toyo Satsushi Kogyo Kk DAMIIBUROTSUKU
DE4028776C2 (en) * 1990-07-03 1994-03-10 Samsung Electronics Co Ltd Method for forming a metallic wiring layer and filling a contact opening in a semiconductor component
DE4215664C1 (en) * 1992-05-13 1993-11-25 Mtu Muenchen Gmbh Process for the application of metallic intermediate layers and its application

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3159556A (en) * 1960-12-08 1964-12-01 Bell Telephone Labor Inc Stabilized tantalum film resistors
BE634012A (en) * 1961-10-03
US3261082A (en) * 1962-03-27 1966-07-19 Ibm Method of tailoring thin film impedance devices
GB1067831A (en) * 1964-03-11 1967-05-03 Ultra Electronics Ltd Improvements in thin film circuits
US3420706A (en) * 1964-06-23 1969-01-07 Bell Telephone Labor Inc Technique for fabrication of printed circuit resistors
US3558461A (en) * 1968-10-28 1971-01-26 Bell Telephone Labor Inc Thin film resistor and preparation thereof

Also Published As

Publication number Publication date
GB1379510A (en) 1975-01-02
DE2262022A1 (en) 1973-07-05
NL7217204A (en) 1973-07-03
JPS5436564B2 (en) 1979-11-09
IT976172B (en) 1974-08-20
CA971649A (en) 1975-07-22
JPS4874411A (en) 1973-10-06
BE793097A (en) 1973-04-16
DE2262022C2 (en) 1982-03-25
FR2167177A5 (en) 1973-08-17

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