IT976172B - PROCEDURE FOR ADJUSTING THE TEMPERATURE COEF FICIENT OF RESISTANCE OF THIN TANTALUM AND ALUMINUM ALLOY FILMS - Google Patents

PROCEDURE FOR ADJUSTING THE TEMPERATURE COEF FICIENT OF RESISTANCE OF THIN TANTALUM AND ALUMINUM ALLOY FILMS

Info

Publication number
IT976172B
IT976172B IT7110172A IT7110172A IT976172B IT 976172 B IT976172 B IT 976172B IT 7110172 A IT7110172 A IT 7110172A IT 7110172 A IT7110172 A IT 7110172A IT 976172 B IT976172 B IT 976172B
Authority
IT
Italy
Prior art keywords
procedure
adjusting
resistance
aluminum alloy
alloy films
Prior art date
Application number
IT7110172A
Other languages
Italian (it)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT976172B publication Critical patent/IT976172B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Heat Treatment Of Nonferrous Metals Or Alloys (AREA)
  • Physical Vapour Deposition (AREA)
IT7110172A 1971-12-30 1972-12-27 PROCEDURE FOR ADJUSTING THE TEMPERATURE COEF FICIENT OF RESISTANCE OF THIN TANTALUM AND ALUMINUM ALLOY FILMS IT976172B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21420571A 1971-12-30 1971-12-30
US24363072A 1972-04-13 1972-04-13

Publications (1)

Publication Number Publication Date
IT976172B true IT976172B (en) 1974-08-20

Family

ID=26908776

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7110172A IT976172B (en) 1971-12-30 1972-12-27 PROCEDURE FOR ADJUSTING THE TEMPERATURE COEF FICIENT OF RESISTANCE OF THIN TANTALUM AND ALUMINUM ALLOY FILMS

Country Status (9)

Country Link
JP (1) JPS5436564B2 (en)
BE (1) BE793097A (en)
CA (1) CA971649A (en)
DE (1) DE2262022C2 (en)
FR (1) FR2167177A5 (en)
GB (1) GB1379510A (en)
IT (1) IT976172B (en)
NL (1) NL7217204A (en)
SE (1) SE382714B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114861A (en) * 1974-07-30 1976-02-05 Toyo Satsushi Kogyo Kk DAMIIBUROTSUKU
DE4028776C2 (en) * 1990-07-03 1994-03-10 Samsung Electronics Co Ltd Method for forming a metallic wiring layer and filling a contact opening in a semiconductor component
DE4215664C1 (en) * 1992-05-13 1993-11-25 Mtu Muenchen Gmbh Process for the application of metallic intermediate layers and its application

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3159556A (en) * 1960-12-08 1964-12-01 Bell Telephone Labor Inc Stabilized tantalum film resistors
BE634012A (en) * 1961-10-03
US3261082A (en) * 1962-03-27 1966-07-19 Ibm Method of tailoring thin film impedance devices
GB1067831A (en) * 1964-03-11 1967-05-03 Ultra Electronics Ltd Improvements in thin film circuits
US3420706A (en) * 1964-06-23 1969-01-07 Bell Telephone Labor Inc Technique for fabrication of printed circuit resistors
US3558461A (en) * 1968-10-28 1971-01-26 Bell Telephone Labor Inc Thin film resistor and preparation thereof

Also Published As

Publication number Publication date
GB1379510A (en) 1975-01-02
DE2262022A1 (en) 1973-07-05
NL7217204A (en) 1973-07-03
JPS5436564B2 (en) 1979-11-09
CA971649A (en) 1975-07-22
JPS4874411A (en) 1973-10-06
BE793097A (en) 1973-04-16
DE2262022C2 (en) 1982-03-25
FR2167177A5 (en) 1973-08-17
SE382714B (en) 1976-02-09

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