JPS4868188A - - Google Patents

Info

Publication number
JPS4868188A
JPS4868188A JP10262771A JP10262771A JPS4868188A JP S4868188 A JPS4868188 A JP S4868188A JP 10262771 A JP10262771 A JP 10262771A JP 10262771 A JP10262771 A JP 10262771A JP S4868188 A JPS4868188 A JP S4868188A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10262771A
Other languages
Japanese (ja)
Other versions
JPS5242358B2 (US06623731-20030923-C00012.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10262771A priority Critical patent/JPS5242358B2/ja
Priority to US00315834A priority patent/US3828231A/en
Priority to DE2262475A priority patent/DE2262475C3/de
Publication of JPS4868188A publication Critical patent/JPS4868188A/ja
Publication of JPS5242358B2 publication Critical patent/JPS5242358B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/113—Q-switching using intracavity saturable absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP10262771A 1971-12-20 1971-12-20 Expired JPS5242358B2 (US06623731-20030923-C00012.png)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10262771A JPS5242358B2 (US06623731-20030923-C00012.png) 1971-12-20 1971-12-20
US00315834A US3828231A (en) 1971-12-20 1972-12-18 Light amplifier using a semiconductor
DE2262475A DE2262475C3 (de) 1971-12-20 1972-12-20 Verfahren zum Betrieb eines Lichtverstärkers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10262771A JPS5242358B2 (US06623731-20030923-C00012.png) 1971-12-20 1971-12-20

Publications (2)

Publication Number Publication Date
JPS4868188A true JPS4868188A (US06623731-20030923-C00012.png) 1973-09-17
JPS5242358B2 JPS5242358B2 (US06623731-20030923-C00012.png) 1977-10-24

Family

ID=14332462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10262771A Expired JPS5242358B2 (US06623731-20030923-C00012.png) 1971-12-20 1971-12-20

Country Status (3)

Country Link
US (1) US3828231A (US06623731-20030923-C00012.png)
JP (1) JPS5242358B2 (US06623731-20030923-C00012.png)
DE (1) DE2262475C3 (US06623731-20030923-C00012.png)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151574U (US06623731-20030923-C00012.png) * 1975-05-28 1976-12-03
JPS56118386A (en) * 1980-02-25 1981-09-17 Nippon Telegr & Teleph Corp <Ntt> Optical repeater
JPS57139981A (en) * 1981-02-25 1982-08-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device
JPS57145388A (en) * 1981-03-03 1982-09-08 Nippon Telegr & Teleph Corp <Ntt> Control method for laser light generation
JPS5850790A (ja) * 1981-09-19 1983-03-25 Mitsubishi Electric Corp 光半導体デバイス

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3955082A (en) * 1974-09-19 1976-05-04 Northern Electric Company Limited Photodiode detector with selective frequency response
US3975751A (en) * 1974-09-19 1976-08-17 Northern Electric Company Limited Monolithic light-emitting diode and modulator
US4628273A (en) * 1983-12-12 1986-12-09 International Telephone And Telegraph Corporation Optical amplifier
CA1251845A (en) * 1984-08-06 1989-03-28 Ian D. Henning Optical amplification
JPS61135189U (US06623731-20030923-C00012.png) * 1984-10-25 1986-08-22
US4791636A (en) * 1985-10-30 1988-12-13 Sharp Kabushiki Kaisha Semiconductor laser device and a method for driving the same
JPH0656908B2 (ja) * 1987-03-31 1994-07-27 日本電信電話株式会社 波長変換素子
US5175643A (en) * 1991-09-30 1992-12-29 Xerox Corporation Monolithic integrated master oscillator power amplifier
US6111472A (en) * 1998-08-19 2000-08-29 Hughes Electronics Corporation Quasi-optical amplifier
US6687461B1 (en) * 1998-11-04 2004-02-03 Board Of Regents, The University Of Texas System Active optical lattice filters
US6445495B1 (en) 1999-03-22 2002-09-03 Genoa Corporation Tunable-gain lasing semiconductor optical amplifier
US6512629B1 (en) 1999-03-22 2003-01-28 Genoa Corporation Low-noise, high-power optical amplifier
US6891664B2 (en) 1999-03-22 2005-05-10 Finisar Corporation Multistage tunable gain optical amplifier
US6822787B1 (en) * 1999-04-26 2004-11-23 Finisar Corporation Lasing semiconductor optical amplifier with optical signal power monitor
US6801555B1 (en) 1999-04-26 2004-10-05 Finisar Corporation Lasing semiconductor optical amplifier with output power monitor and control
US6647041B1 (en) 2000-05-26 2003-11-11 Finisar Corporation Electrically pumped vertical optical cavity with improved electrical performance
US6853658B1 (en) 2000-12-14 2005-02-08 Finisar Corporation Optical logical circuits based on lasing semiconductor optical amplifiers
US7046434B1 (en) 2000-12-14 2006-05-16 Finisar Corporation Optical crossbar using lasing semiconductor optical amplifiers
US7110169B1 (en) 2000-12-14 2006-09-19 Finisar Corporation Integrated optical device including a vertical lasing semiconductor optical amplifier
US6560010B1 (en) 2000-12-14 2003-05-06 Genoa Corporation Broadband gain-clamped semiconductor optical amplifier devices
US7065300B1 (en) 2000-12-14 2006-06-20 Finsiar Corporation Optical transmitter including a linear semiconductor optical amplifier
US6707600B1 (en) 2001-03-09 2004-03-16 Finisar Corporation Early warning failure detection for a lasing semiconductor optical amplifier
US6909536B1 (en) 2001-03-09 2005-06-21 Finisar Corporation Optical receiver including a linear semiconductor optical amplifier
US6765715B1 (en) 2001-03-09 2004-07-20 Finisar Corporation Optical 2R/3R regeneration
US6829405B1 (en) * 2001-03-09 2004-12-07 Finisar Corporation Reconfigurable optical add-drop multiplexer
US6943939B1 (en) 2002-03-19 2005-09-13 Finisar Corporation Optical amplifier with damped relaxation oscillation
JP2003348021A (ja) * 2002-05-28 2003-12-05 Sumitomo Electric Ind Ltd 光送信器および光通信システム
GB2390475A (en) * 2002-07-02 2004-01-07 Kamelian Ltd Control of the Gain of a Semiconductor Optical Amplifier
JP4439193B2 (ja) * 2003-03-20 2010-03-24 富士通株式会社 半導体光増幅器及び光増幅方法
US7042657B2 (en) * 2003-08-28 2006-05-09 Board Of Regents The University Of Texas System Filter for selectively processing optical and other signals
US7443902B2 (en) * 2003-10-15 2008-10-28 California Institute Of Technology Laser-based optical switches and logic
US7480319B2 (en) * 2003-10-15 2009-01-20 California Institute Of Technology Optical switches and logic and methods of implementation
US7351601B2 (en) * 2003-10-15 2008-04-01 California Institute Of Technology Methods of forming nanocavity laser structures
JP4282573B2 (ja) * 2004-09-03 2009-06-24 シャープ株式会社 半導体光増幅駆動装置
JP4350757B2 (ja) * 2007-01-23 2009-10-21 シャープ株式会社 半導体光増幅素子および半導体光増幅素子駆動装置
GB2465754B (en) * 2008-11-26 2011-02-09 Univ Dublin City A semiconductor optical amplifier with a reduced noise figure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303431A (en) * 1964-02-10 1967-02-07 Ibm Coupled semiconductor injection laser devices
GB1053033A (US06623731-20030923-C00012.png) * 1964-04-03
US3467906A (en) * 1967-06-14 1969-09-16 Rca Corp Constant-gain low-noise light amplifier
US3551842A (en) * 1968-03-27 1970-12-29 Rca Corp Semiconductor laser having high power output and reduced threshold
US3724926A (en) * 1971-08-09 1973-04-03 Bell Telephone Labor Inc Optical pulse modulator

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151574U (US06623731-20030923-C00012.png) * 1975-05-28 1976-12-03
JPS56118386A (en) * 1980-02-25 1981-09-17 Nippon Telegr & Teleph Corp <Ntt> Optical repeater
JPS57139981A (en) * 1981-02-25 1982-08-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device
JPS57145388A (en) * 1981-03-03 1982-09-08 Nippon Telegr & Teleph Corp <Ntt> Control method for laser light generation
JPS5850790A (ja) * 1981-09-19 1983-03-25 Mitsubishi Electric Corp 光半導体デバイス
JPS6237909B2 (US06623731-20030923-C00012.png) * 1981-09-19 1987-08-14 Mitsubishi Electric Corp

Also Published As

Publication number Publication date
DE2262475B2 (de) 1975-02-27
DE2262475A1 (de) 1973-06-28
US3828231A (en) 1974-08-06
JPS5242358B2 (US06623731-20030923-C00012.png) 1977-10-24
DE2262475C3 (de) 1975-10-16

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