JPS4845185A - - Google Patents

Info

Publication number
JPS4845185A
JPS4845185A JP46080047A JP8004771A JPS4845185A JP S4845185 A JPS4845185 A JP S4845185A JP 46080047 A JP46080047 A JP 46080047A JP 8004771 A JP8004771 A JP 8004771A JP S4845185 A JPS4845185 A JP S4845185A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP46080047A
Other languages
Japanese (ja)
Other versions
JPS5232234B2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46080047A priority Critical patent/JPS5232234B2/ja
Priority to GB4564772A priority patent/GB1413161A/en
Priority to US00295795A priority patent/US3849270A/en
Priority to DE2249832A priority patent/DE2249832C3/de
Priority to DE2265257A priority patent/DE2265257C2/de
Publication of JPS4845185A publication Critical patent/JPS4845185A/ja
Publication of JPS5232234B2 publication Critical patent/JPS5232234B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H10W10/018—
    • H10W10/10—
    • H10W20/40—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP46080047A 1971-10-11 1971-10-11 Expired JPS5232234B2 (enExample)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP46080047A JPS5232234B2 (enExample) 1971-10-11 1971-10-11
GB4564772A GB1413161A (en) 1971-10-11 1972-10-04 Process for manufacturing semiconductor devices
US00295795A US3849270A (en) 1971-10-11 1972-10-10 Process of manufacturing semiconductor devices
DE2249832A DE2249832C3 (de) 1971-10-11 1972-10-11 Verfahren zum Herstellen einer Verdrahtungsschicht und Anwendung des Verfahrens zum Herstellen von Mehrschichtenverdrahtungen
DE2265257A DE2265257C2 (de) 1971-10-11 1972-10-11 Verfahren zur Herstellung einer integrierten Halbleiterschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46080047A JPS5232234B2 (enExample) 1971-10-11 1971-10-11

Publications (2)

Publication Number Publication Date
JPS4845185A true JPS4845185A (enExample) 1973-06-28
JPS5232234B2 JPS5232234B2 (enExample) 1977-08-19

Family

ID=13707313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46080047A Expired JPS5232234B2 (enExample) 1971-10-11 1971-10-11

Country Status (4)

Country Link
US (1) US3849270A (enExample)
JP (1) JPS5232234B2 (enExample)
DE (2) DE2265257C2 (enExample)
GB (1) GB1413161A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893261A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体装置の製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583380B2 (ja) * 1977-03-04 1983-01-21 株式会社日立製作所 半導体装置とその製造方法
WO1990000476A1 (en) * 1988-07-12 1990-01-25 The Regents Of The University Of California Planarized interconnect etchback
US5256565A (en) * 1989-05-08 1993-10-26 The United States Of America As Represented By The United States Department Of Energy Electrochemical planarization
US5096550A (en) * 1990-10-15 1992-03-17 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for spatially uniform electropolishing and electrolytic etching
US6315883B1 (en) 1998-10-26 2001-11-13 Novellus Systems, Inc. Electroplanarization of large and small damascene features using diffusion barriers and electropolishing
US7531079B1 (en) 1998-10-26 2009-05-12 Novellus Systems, Inc. Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation
US7449098B1 (en) 1999-10-05 2008-11-11 Novellus Systems, Inc. Method for planar electroplating
US6709565B2 (en) 1998-10-26 2004-03-23 Novellus Systems, Inc. Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation
US6495442B1 (en) * 2000-10-18 2002-12-17 Magic Corporation Post passivation interconnection schemes on top of the IC chips
US6653226B1 (en) 2001-01-09 2003-11-25 Novellus Systems, Inc. Method for electrochemical planarization of metal surfaces
WO2003088352A1 (en) * 2002-04-09 2003-10-23 Rensselaer Polytechnic Institute Electrochemical planarization of metal feature surfaces
US7799200B1 (en) 2002-07-29 2010-09-21 Novellus Systems, Inc. Selective electrochemical accelerator removal
US8158532B2 (en) 2003-10-20 2012-04-17 Novellus Systems, Inc. Topography reduction and control by selective accelerator removal
US8530359B2 (en) 2003-10-20 2013-09-10 Novellus Systems, Inc. Modulated metal removal using localized wet etching
US8168540B1 (en) 2009-12-29 2012-05-01 Novellus Systems, Inc. Methods and apparatus for depositing copper on tungsten

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
GB1048424A (en) * 1963-08-28 1966-11-16 Int Standard Electric Corp Improvements in or relating to semiconductor devices
US3372063A (en) * 1964-12-22 1968-03-05 Hitachi Ltd Method for manufacturing at least one electrically isolated region of a semiconductive material
US3409523A (en) * 1966-03-10 1968-11-05 Bell Telephone Labor Inc Electroetching an aluminum plated semiconductor in a tetraalkylammonium hydroxide electrolyte
FR96113E (fr) * 1967-12-06 1972-05-19 Ibm Dispositif semi-conducteur.
NL7101307A (enExample) * 1970-02-03 1971-08-05

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893261A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
DE2249832C3 (de) 1982-02-18
DE2265257C2 (de) 1983-10-27
GB1413161A (en) 1975-11-05
DE2249832A1 (de) 1973-04-19
DE2265257A1 (de) 1977-02-10
JPS5232234B2 (enExample) 1977-08-19
DE2249832B2 (de) 1977-06-02
US3849270A (en) 1974-11-19

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