JPS4839866B1 - - Google Patents

Info

Publication number
JPS4839866B1
JPS4839866B1 JP44082652A JP8265269A JPS4839866B1 JP S4839866 B1 JPS4839866 B1 JP S4839866B1 JP 44082652 A JP44082652 A JP 44082652A JP 8265269 A JP8265269 A JP 8265269A JP S4839866 B1 JPS4839866 B1 JP S4839866B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44082652A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4839866B1 publication Critical patent/JPS4839866B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Silicon Compounds (AREA)
JP44082652A 1968-10-17 1969-10-17 Pending JPS4839866B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681803489 DE1803489A1 (de) 1968-10-17 1968-10-17 Verfahren zum Herstellen eines Halbleiterbauelementes

Publications (1)

Publication Number Publication Date
JPS4839866B1 true JPS4839866B1 (enrdf_load_stackoverflow) 1973-11-27

Family

ID=5710695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44082652A Pending JPS4839866B1 (enrdf_load_stackoverflow) 1968-10-17 1969-10-17

Country Status (7)

Country Link
US (1) US3665594A (enrdf_load_stackoverflow)
JP (1) JPS4839866B1 (enrdf_load_stackoverflow)
CH (1) CH498490A (enrdf_load_stackoverflow)
DE (1) DE1803489A1 (enrdf_load_stackoverflow)
FR (1) FR2020901B1 (enrdf_load_stackoverflow)
GB (1) GB1225088A (enrdf_load_stackoverflow)
SE (1) SE341950B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS532189U (enrdf_load_stackoverflow) * 1976-06-23 1978-01-10
JPS5322669U (enrdf_load_stackoverflow) * 1976-08-05 1978-02-25

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886583A (en) * 1971-07-01 1975-05-27 Motorola Inc Insulated gate-field-effect transistor
FR2159632A5 (enrdf_load_stackoverflow) * 1971-11-05 1973-06-22 Thomson Csf
JPS5946415B2 (ja) * 1978-04-28 1984-11-12 株式会社日立製作所 半導体装置の製造方法
US4293587A (en) * 1978-11-09 1981-10-06 Zilog, Inc. Low resistance backside preparation for semiconductor integrated circuit chips
US4278195A (en) * 1978-12-01 1981-07-14 Honeywell Inc. Method for low temperature bonding of silicon and silicon on sapphire and spinel to nickel and nickel steel and apparatus using such _a bonding technique
NL8004139A (nl) * 1980-07-18 1982-02-16 Philips Nv Halfgeleiderinrichting.
IT1210953B (it) * 1982-11-19 1989-09-29 Ates Componenti Elettron Metodo per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile.
GB2227700B (en) * 1989-02-01 1992-12-02 Marconi Electronic Devices Methods of joining components
US5178319A (en) * 1991-04-02 1993-01-12 At&T Bell Laboratories Compression bonding methods
CA2210063A1 (en) * 1997-07-08 1999-01-08 Ibm Canada Limited-Ibm Canada Limitee Method of manufacturing wire segments of homogeneous composition
KR100499722B1 (ko) * 2000-02-29 2005-07-07 오므론 가부시키가이샤 칩형 반도체 소자
SE520148C3 (sv) * 2000-11-24 2003-07-16 Sandvik Ab Förfarande för att öka livslängden hos värmeelement av molybdendisilicidtyp vid värmebehandling av elektroniska keramer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
FR1258010A (fr) * 1959-06-30 1961-04-07 Fairchild Semiconductor Procédé de fabrication de transistors
US3196330A (en) * 1960-06-10 1965-07-20 Gen Electric Semiconductor devices and methods of making same
NL275554A (enrdf_load_stackoverflow) * 1961-04-19 1900-01-01
US3330030A (en) * 1961-09-29 1967-07-11 Texas Instruments Inc Method of making semiconductor devices
FR1396813A (fr) * 1963-05-29 1965-04-23 Siemens Ag Procédé de fabrication d'un dispositif électrique semi-conducteur
US3375143A (en) * 1964-09-29 1968-03-26 Melpar Inc Method of making tunnel diode
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3461462A (en) * 1965-12-02 1969-08-12 United Aircraft Corp Method for bonding silicon semiconductor devices
US3537174A (en) * 1968-10-07 1970-11-03 Gen Electric Process for forming tungsten barrier electrical connection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS532189U (enrdf_load_stackoverflow) * 1976-06-23 1978-01-10
JPS5322669U (enrdf_load_stackoverflow) * 1976-08-05 1978-02-25

Also Published As

Publication number Publication date
FR2020901A1 (enrdf_load_stackoverflow) 1970-07-17
SE341950B (enrdf_load_stackoverflow) 1972-01-17
CH498490A (de) 1970-10-31
FR2020901B1 (enrdf_load_stackoverflow) 1974-02-22
GB1225088A (enrdf_load_stackoverflow) 1971-03-17
DE1803489A1 (de) 1970-05-27
US3665594A (en) 1972-05-30

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