DE1803489A1 - Verfahren zum Herstellen eines Halbleiterbauelementes - Google Patents
Verfahren zum Herstellen eines HalbleiterbauelementesInfo
- Publication number
- DE1803489A1 DE1803489A1 DE19681803489 DE1803489A DE1803489A1 DE 1803489 A1 DE1803489 A1 DE 1803489A1 DE 19681803489 DE19681803489 DE 19681803489 DE 1803489 A DE1803489 A DE 1803489A DE 1803489 A1 DE1803489 A1 DE 1803489A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- aluminum
- zones
- coating
- flat side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000000034 method Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 239000011248 coating agent Substances 0.000 claims description 28
- 238000000576 coating method Methods 0.000 claims description 28
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 13
- 229910000838 Al alloy Inorganic materials 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 230000005496 eutectics Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 239000010426 asphalt Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000551 Silumin Inorganic materials 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
- Thyristors (AREA)
- Silicon Compounds (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Laminated Bodies (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681803489 DE1803489A1 (de) | 1968-10-17 | 1968-10-17 | Verfahren zum Herstellen eines Halbleiterbauelementes |
| CH1252769A CH498490A (de) | 1968-10-17 | 1969-08-19 | Verfahren zum Herstellen eines Halbleiterbauelementes |
| US864121A US3665594A (en) | 1968-10-17 | 1969-10-06 | Method of joining a body of semiconductor material to a contact or support member |
| FR696935218A FR2020901B1 (enrdf_load_stackoverflow) | 1968-10-17 | 1969-10-14 | |
| SE14168/69A SE341950B (enrdf_load_stackoverflow) | 1968-10-17 | 1969-10-15 | |
| GB1225088D GB1225088A (enrdf_load_stackoverflow) | 1968-10-17 | 1969-10-16 | |
| JP44082652A JPS4839866B1 (enrdf_load_stackoverflow) | 1968-10-17 | 1969-10-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681803489 DE1803489A1 (de) | 1968-10-17 | 1968-10-17 | Verfahren zum Herstellen eines Halbleiterbauelementes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1803489A1 true DE1803489A1 (de) | 1970-05-27 |
Family
ID=5710695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681803489 Pending DE1803489A1 (de) | 1968-10-17 | 1968-10-17 | Verfahren zum Herstellen eines Halbleiterbauelementes |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3665594A (enrdf_load_stackoverflow) |
| JP (1) | JPS4839866B1 (enrdf_load_stackoverflow) |
| CH (1) | CH498490A (enrdf_load_stackoverflow) |
| DE (1) | DE1803489A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2020901B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1225088A (enrdf_load_stackoverflow) |
| SE (1) | SE341950B (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2487123A1 (fr) * | 1980-07-18 | 1982-01-22 | Philips Nv | Dispositif semi-conducteur et procede pour relier celui-ci a un support |
| EP0381411A3 (en) * | 1989-02-01 | 1992-03-11 | Plessey Semiconductors Limited | Methods of joining components |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3886583A (en) * | 1971-07-01 | 1975-05-27 | Motorola Inc | Insulated gate-field-effect transistor |
| FR2159632A5 (enrdf_load_stackoverflow) * | 1971-11-05 | 1973-06-22 | Thomson Csf | |
| JPS532189U (enrdf_load_stackoverflow) * | 1976-06-23 | 1978-01-10 | ||
| JPS5322669U (enrdf_load_stackoverflow) * | 1976-08-05 | 1978-02-25 | ||
| JPS5946415B2 (ja) * | 1978-04-28 | 1984-11-12 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US4293587A (en) * | 1978-11-09 | 1981-10-06 | Zilog, Inc. | Low resistance backside preparation for semiconductor integrated circuit chips |
| US4278195A (en) * | 1978-12-01 | 1981-07-14 | Honeywell Inc. | Method for low temperature bonding of silicon and silicon on sapphire and spinel to nickel and nickel steel and apparatus using such _a bonding technique |
| IT1210953B (it) * | 1982-11-19 | 1989-09-29 | Ates Componenti Elettron | Metodo per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile. |
| US5178319A (en) * | 1991-04-02 | 1993-01-12 | At&T Bell Laboratories | Compression bonding methods |
| CA2210063A1 (en) * | 1997-07-08 | 1999-01-08 | Ibm Canada Limited-Ibm Canada Limitee | Method of manufacturing wire segments of homogeneous composition |
| KR100499722B1 (ko) * | 2000-02-29 | 2005-07-07 | 오므론 가부시키가이샤 | 칩형 반도체 소자 |
| SE520148C3 (sv) * | 2000-11-24 | 2003-07-16 | Sandvik Ab | Förfarande för att öka livslängden hos värmeelement av molybdendisilicidtyp vid värmebehandling av elektroniska keramer |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2763822A (en) * | 1955-05-10 | 1956-09-18 | Westinghouse Electric Corp | Silicon semiconductor devices |
| FR1258010A (fr) * | 1959-06-30 | 1961-04-07 | Fairchild Semiconductor | Procédé de fabrication de transistors |
| US3196330A (en) * | 1960-06-10 | 1965-07-20 | Gen Electric | Semiconductor devices and methods of making same |
| NL275554A (enrdf_load_stackoverflow) * | 1961-04-19 | 1900-01-01 | ||
| US3330030A (en) * | 1961-09-29 | 1967-07-11 | Texas Instruments Inc | Method of making semiconductor devices |
| FR1396813A (fr) * | 1963-05-29 | 1965-04-23 | Siemens Ag | Procédé de fabrication d'un dispositif électrique semi-conducteur |
| US3375143A (en) * | 1964-09-29 | 1968-03-26 | Melpar Inc | Method of making tunnel diode |
| US3382568A (en) * | 1965-07-22 | 1968-05-14 | Ibm | Method for providing electrical connections to semiconductor devices |
| US3461462A (en) * | 1965-12-02 | 1969-08-12 | United Aircraft Corp | Method for bonding silicon semiconductor devices |
| US3537174A (en) * | 1968-10-07 | 1970-11-03 | Gen Electric | Process for forming tungsten barrier electrical connection |
-
1968
- 1968-10-17 DE DE19681803489 patent/DE1803489A1/de active Pending
-
1969
- 1969-08-19 CH CH1252769A patent/CH498490A/de not_active IP Right Cessation
- 1969-10-06 US US864121A patent/US3665594A/en not_active Expired - Lifetime
- 1969-10-14 FR FR696935218A patent/FR2020901B1/fr not_active Expired
- 1969-10-15 SE SE14168/69A patent/SE341950B/xx unknown
- 1969-10-16 GB GB1225088D patent/GB1225088A/en not_active Expired
- 1969-10-17 JP JP44082652A patent/JPS4839866B1/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2487123A1 (fr) * | 1980-07-18 | 1982-01-22 | Philips Nv | Dispositif semi-conducteur et procede pour relier celui-ci a un support |
| EP0381411A3 (en) * | 1989-02-01 | 1992-03-11 | Plessey Semiconductors Limited | Methods of joining components |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4839866B1 (enrdf_load_stackoverflow) | 1973-11-27 |
| US3665594A (en) | 1972-05-30 |
| SE341950B (enrdf_load_stackoverflow) | 1972-01-17 |
| CH498490A (de) | 1970-10-31 |
| GB1225088A (enrdf_load_stackoverflow) | 1971-03-17 |
| FR2020901A1 (enrdf_load_stackoverflow) | 1970-07-17 |
| FR2020901B1 (enrdf_load_stackoverflow) | 1974-02-22 |
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