JPS4835778A - - Google Patents

Info

Publication number
JPS4835778A
JPS4835778A JP46069215A JP6921571A JPS4835778A JP S4835778 A JPS4835778 A JP S4835778A JP 46069215 A JP46069215 A JP 46069215A JP 6921571 A JP6921571 A JP 6921571A JP S4835778 A JPS4835778 A JP S4835778A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46069215A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46069215A priority Critical patent/JPS4835778A/ja
Priority to US00287794A priority patent/US3801880A/en
Publication of JPS4835778A publication Critical patent/JPS4835778A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H10W20/0633—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material using subtractive patterning of the conductive members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H10W20/0693—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs by forming self-aligned vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851—Intermediate layer is discontinuous or differential
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
JP46069215A 1971-09-09 1971-09-09 Pending JPS4835778A (enFirst)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP46069215A JPS4835778A (enFirst) 1971-09-09 1971-09-09
US00287794A US3801880A (en) 1971-09-09 1972-09-11 Multilayer interconnected structure for semiconductor integrated circuit and process for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46069215A JPS4835778A (enFirst) 1971-09-09 1971-09-09

Publications (1)

Publication Number Publication Date
JPS4835778A true JPS4835778A (enFirst) 1973-05-26

Family

ID=13396259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46069215A Pending JPS4835778A (enFirst) 1971-09-09 1971-09-09

Country Status (2)

Country Link
US (1) US3801880A (enFirst)
JP (1) JPS4835778A (enFirst)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152506U (enFirst) * 1974-10-21 1976-04-21
JPS56130947A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS56130951A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS57132342A (en) * 1981-02-10 1982-08-16 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57167659A (en) * 1981-03-30 1982-10-15 Fujitsu Ltd Manufacture of semiconductor device
JPS57172752A (en) * 1981-04-16 1982-10-23 Fujitsu Ltd Semiconductor device
JPS60235440A (ja) * 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd 多層配線形成方法
US6289629B2 (en) * 1996-09-13 2001-09-18 Pest West Electronics Limited Insect catching device

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001870A (en) * 1972-08-18 1977-01-04 Hitachi, Ltd. Isolating protective film for semiconductor devices and method for making the same
US4017886A (en) * 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
JPS5421073B2 (enFirst) * 1974-04-15 1979-07-27
DE2432544C3 (de) * 1974-07-04 1978-11-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Als Halbleiterschaltung ausgebildetes Bauelement mit einem dielektrischen Träger sowie Verfahren zu seiner Herstellung
US3959047A (en) * 1974-09-30 1976-05-25 International Business Machines Corporation Method for constructing a rom for redundancy and other applications
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
US4185294A (en) * 1975-12-10 1980-01-22 Tokyo Shibaura Electric Co., Ltd. Semiconductor device and a method for manufacturing the same
US4151546A (en) * 1976-01-14 1979-04-24 Tokyo Shibaura Electric Co., Ltd. Semiconductor device having electrode-lead layer units of differing thicknesses
DE2638799C3 (de) * 1976-08-27 1981-12-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Verbesserung der Haftung von metallischen Leiterzügen auf Polyimidschichten in integrierten Schaltungen
JPS5334484A (en) * 1976-09-10 1978-03-31 Toshiba Corp Forming method for multi layer wiring
US4121241A (en) * 1977-01-03 1978-10-17 Raytheon Company Multilayer interconnected structure for semiconductor integrated circuit
US4107726A (en) * 1977-01-03 1978-08-15 Raytheon Company Multilayer interconnected structure for semiconductor integrated circuit
FR2428915A1 (fr) * 1978-06-14 1980-01-11 Fujitsu Ltd Procede de fabrication d'un dispositif a semi-conducteurs
US4410622A (en) * 1978-12-29 1983-10-18 International Business Machines Corporation Forming interconnections for multilevel interconnection metallurgy systems
JPS5595340A (en) * 1979-01-10 1980-07-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
US4343833A (en) * 1979-06-26 1982-08-10 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing thermal head
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
DE3123348A1 (de) * 1980-06-19 1982-03-18 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleiterbaustein und verfahren zu dessen herstellung
US4758528A (en) * 1980-07-08 1988-07-19 International Business Machines Corporation Self-aligned metal process for integrated circuit metallization
US4608589A (en) * 1980-07-08 1986-08-26 International Business Machines Corporation Self-aligned metal structure for integrated circuits
US4339526A (en) * 1981-06-24 1982-07-13 International Business Machines Corporation Acetylene terminated, branched polyphenylene resist and protective coating for integrated circuit devices
JPS58101439A (ja) * 1981-12-12 1983-06-16 Toshiba Corp 半導体装置の製造方法
JPS58216445A (ja) * 1982-06-10 1983-12-16 Nec Corp 半導体装置およびその製造方法
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
US4720470A (en) * 1983-12-15 1988-01-19 Laserpath Corporation Method of making electrical circuitry
US4541169A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip
US4541168A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making metal contact studs between first level metal and regions of a semiconductor device compatible with polyimide-filled deep trench isolation schemes
US4715109A (en) * 1985-06-12 1987-12-29 Texas Instruments Incorporated Method of forming a high density vertical stud titanium silicide for reachup contact applications
US4654248A (en) * 1985-12-16 1987-03-31 Gte Communication Systems Corporation Printed wiring board with zones of controlled thermal coefficient of expansion
US4709468A (en) * 1986-01-31 1987-12-01 Texas Instruments Incorporated Method for producing an integrated circuit product having a polyimide film interconnection structure
US4942139A (en) * 1988-02-01 1990-07-17 General Instrument Corporation Method of fabricating a brazed glass pre-passivated chip rectifier
US4962058A (en) * 1989-04-14 1990-10-09 International Business Machines Corporation Process for fabricating multi-level integrated circuit wiring structure from a single metal deposit
JP2688446B2 (ja) * 1990-03-26 1997-12-10 株式会社日立製作所 多層配線基板およびその製造方法
US5270254A (en) * 1991-03-27 1993-12-14 Sgs-Thomson Microelectronics, Inc. Integrated circuit metallization with zero contact enclosure requirements and method of making the same
SE500523C2 (sv) * 1992-10-09 1994-07-11 Elsa Elektroniska Systems And Halvledarkomponent med minst en första och en andra komponentelektrod innefattande ett flertal på en halvledarbricka integrerade halvledarelement, som vart och ett innefattar minst en första och en andra elementelektrod på samma sida av halvledarbrickan, varid de första elementelektroderna är förbundna med den första komponentelektroden och de andra elementelektroderna är förbundna med den andra komponentelektroden.
JPH07235537A (ja) * 1994-02-23 1995-09-05 Mitsubishi Electric Corp 表面が平坦化された半導体装置およびその製造方法
US6111319A (en) * 1995-12-19 2000-08-29 Stmicroelectronics, Inc. Method of forming submicron contacts and vias in an integrated circuit
US5847460A (en) * 1995-12-19 1998-12-08 Stmicroelectronics, Inc. Submicron contacts and vias in an integrated circuit
AU5561696A (en) * 1996-04-18 1997-11-07 International Business Machines Corporation Organic-metallic composite coating for copper surface protection
US5773197A (en) * 1996-10-28 1998-06-30 International Business Machines Corporation Integrated circuit device and process for its manufacture
US5998876A (en) * 1997-12-30 1999-12-07 International Business Machines Corporation Reworkable thermoplastic hyper-branched encapsulant
US6111323A (en) * 1997-12-30 2000-08-29 International Business Machines Corporation Reworkable thermoplastic encapsulant
JP4032916B2 (ja) * 2001-11-28 2008-01-16 三菱化学株式会社 エッチング液
TW550800B (en) * 2002-05-27 2003-09-01 Via Tech Inc Integrated circuit package without solder mask and method for the same
US20060267194A1 (en) 2002-10-15 2006-11-30 Sehat Sutardja Integrated circuit package with air gap
EP1760780A3 (en) 2005-09-06 2013-05-15 Marvell World Trade Ltd. Integrated circuit including silicon wafer with annealed glass paste
US9093448B2 (en) 2008-11-25 2015-07-28 Lord Corporation Methods for protecting a die surface with photocurable materials
US8568961B2 (en) * 2008-11-25 2013-10-29 Lord Corporation Methods for protecting a die surface with photocurable materials
US10192832B2 (en) * 2016-08-16 2019-01-29 United Microelectronics Corp. Alignment mark structure with dummy pattern

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3597834A (en) * 1968-02-14 1971-08-10 Texas Instruments Inc Method in forming electrically continuous circuit through insulating layer
GB1276095A (en) * 1968-09-05 1972-06-01 Secr Defence Microcircuits and processes for their manufacture
US3700508A (en) * 1970-06-25 1972-10-24 Gen Instrument Corp Fabrication of integrated microcircuit devices
US3602635A (en) * 1970-06-30 1971-08-31 Ibm Micro-circuit device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152506U (enFirst) * 1974-10-21 1976-04-21
JPS56130947A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS56130951A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS57132342A (en) * 1981-02-10 1982-08-16 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57167659A (en) * 1981-03-30 1982-10-15 Fujitsu Ltd Manufacture of semiconductor device
JPS57172752A (en) * 1981-04-16 1982-10-23 Fujitsu Ltd Semiconductor device
JPS60235440A (ja) * 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd 多層配線形成方法
US6289629B2 (en) * 1996-09-13 2001-09-18 Pest West Electronics Limited Insect catching device

Also Published As

Publication number Publication date
US3801880A (en) 1974-04-02

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