JPS4822901B1 - - Google Patents

Info

Publication number
JPS4822901B1
JPS4822901B1 JP45038775A JP3877570A JPS4822901B1 JP S4822901 B1 JPS4822901 B1 JP S4822901B1 JP 45038775 A JP45038775 A JP 45038775A JP 3877570 A JP3877570 A JP 3877570A JP S4822901 B1 JPS4822901 B1 JP S4822901B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45038775A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4822901B1 publication Critical patent/JPS4822901B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP45038775A 1969-06-02 1970-05-08 Pending JPS4822901B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82963369A 1969-06-02 1969-06-02

Publications (1)

Publication Number Publication Date
JPS4822901B1 true JPS4822901B1 (fr) 1973-07-10

Family

ID=25255069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45038775A Pending JPS4822901B1 (fr) 1969-06-02 1970-05-08

Country Status (5)

Country Link
US (1) US3661761A (fr)
JP (1) JPS4822901B1 (fr)
DE (1) DE2026321A1 (fr)
FR (1) FR2052341A5 (fr)
GB (1) GB1294025A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50119203U (fr) * 1974-03-14 1975-09-29
JPS536963Y2 (fr) * 1973-05-08 1978-02-22
JPS5441522Y2 (fr) * 1973-10-25 1979-12-05

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767559A (en) * 1970-06-24 1973-10-23 Eastman Kodak Co Sputtering apparatus with accordion pleated anode means
FR2119930B1 (fr) * 1970-12-31 1974-08-19 Ibm
US4036723A (en) * 1975-08-21 1977-07-19 International Business Machines Corporation RF bias sputtering method for producing insulating films free of surface irregularities
GB1544172A (en) * 1976-03-03 1979-04-11 Int Plasma Corp Gas plasma reactor and process
US4029562A (en) * 1976-04-29 1977-06-14 Ibm Corporation Forming feedthrough connections for multi-level interconnections metallurgy systems
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
DE2705611A1 (de) * 1977-02-10 1978-08-17 Siemens Ag Verfahren zum bedecken einer auf einem substrat befindlichen ersten schicht oder schichtenfolge mit einer weiteren zweiten schicht durch aufsputtern
US4153528A (en) * 1978-06-26 1979-05-08 International Business Machines Corporation Contoured quartz anode plate
US4349409A (en) * 1980-05-12 1982-09-14 Fujitsu Limited Method and apparatus for plasma etching
US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
DE3650612T2 (de) * 1985-05-13 1997-08-21 Nippon Telegraph & Telephone Verfahren zur Planarisierung einer dünnen Al-Schicht
CH668565A5 (de) * 1986-06-23 1989-01-13 Balzers Hochvakuum Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz.
US6248219B1 (en) * 1986-06-23 2001-06-19 Unaxis Balzers Aktiengesellschaft Process and apparatus for sputter etching or sputter coating
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
US5490910A (en) * 1992-03-09 1996-02-13 Tulip Memory Systems, Inc. Circularly symmetric sputtering apparatus with hollow-cathode plasma devices
US6942764B1 (en) 1995-08-24 2005-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Arc-sprayed shield for pre-sputter etching chamber
US6342135B1 (en) * 1995-11-02 2002-01-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
US6436253B1 (en) 1998-05-20 2002-08-20 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
US6475400B2 (en) 2001-02-26 2002-11-05 Trw Inc. Method for controlling the sheet resistance of thin film resistors
US20040226516A1 (en) * 2003-05-13 2004-11-18 Daniel Timothy J. Wafer pedestal cover
WO2010058366A1 (fr) * 2008-11-24 2010-05-27 Oc Oerlikon Balzers Ag Agencement de pulvérisation rf
EP2382648B1 (fr) 2008-12-23 2016-10-05 Oerlikon Advanced Technologies AG Arrangement pour pulvérisation cathodique rf
TW201425615A (zh) * 2012-12-24 2014-07-01 Hon Hai Prec Ind Co Ltd 電極及鍍膜裝置
KR102227783B1 (ko) 2016-12-27 2021-03-16 에바텍 아크티엔게젤샤프트 진공 플라즈마 작업편 처리 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS536963Y2 (fr) * 1973-05-08 1978-02-22
JPS5441522Y2 (fr) * 1973-10-25 1979-12-05
JPS50119203U (fr) * 1974-03-14 1975-09-29

Also Published As

Publication number Publication date
GB1294025A (en) 1972-10-25
FR2052341A5 (fr) 1971-04-09
DE2026321A1 (de) 1970-12-10
US3661761A (en) 1972-05-09

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