JPS4430536B1 - - Google Patents

Info

Publication number
JPS4430536B1
JPS4430536B1 JP7404666A JP7404666A JPS4430536B1 JP S4430536 B1 JPS4430536 B1 JP S4430536B1 JP 7404666 A JP7404666 A JP 7404666A JP 7404666 A JP7404666 A JP 7404666A JP S4430536 B1 JPS4430536 B1 JP S4430536B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7404666A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1965T0030042 external-priority patent/DE1256727B/de
Application filed filed Critical
Publication of JPS4430536B1 publication Critical patent/JPS4430536B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/864Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B17/00Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices
    • H10N80/10Gunn-effect devices
    • H10N80/103Gunn-effect devices controlled by electromagnetic radiation
JP7404666A 1965-11-11 1966-11-10 Pending JPS4430536B1 (xx)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DET29765A DE1256724B (de) 1965-11-11 1965-11-11 Verfahren zur Beeinflussung von elektromagnetischen Schwingungen eines Halbleiterkoerpers und Anwendung des Verfahrens
DE1965T0030042 DE1256727B (de) 1965-12-16 1965-12-16 Verfahren zur Beeinflussung des Verstaerkungsgrades eines verstaerkenden Halbleiter-Bauelementes
DET0030163 1965-12-24
DET30485A DE1256728B (de) 1965-11-11 1966-02-18 Verfahren zur Beeinflussung von elektromagnetischen Schwingungen im Mikrowellenbereich in einem Halbleiter-Bauelement und Anordnung zur Durchfuehrung des Verfahrens

Publications (1)

Publication Number Publication Date
JPS4430536B1 true JPS4430536B1 (xx) 1969-12-09

Family

ID=27437644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7404666A Pending JPS4430536B1 (xx) 1965-11-11 1966-11-10

Country Status (4)

Country Link
JP (1) JPS4430536B1 (xx)
DE (3) DE1256724B (xx)
FR (1) FR1498844A (xx)
GB (2) GB1116169A (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579143A (en) * 1968-11-29 1971-05-18 North American Rockwell Method for increasing the efficiency of lsa oscillator devices by uniform illumination
US3651423A (en) * 1970-06-24 1972-03-21 Advanced Technology Center Inc Logic device employing light-controlled gunn-effect oscillations

Also Published As

Publication number Publication date
DE1256728B (de) 1967-12-21
GB1119090A (en) 1968-07-10
FR1498844A (fr) 1967-10-20
DE1472237A1 (de) 1969-03-27
GB1116169A (en) 1968-06-06
DE1472237B2 (de) 1970-11-26
DE1256724B (de) 1967-12-21

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