GB1119090A - Improvements in or relating to gunn effect apparatus - Google Patents

Improvements in or relating to gunn effect apparatus

Info

Publication number
GB1119090A
GB1119090A GB58282/67A GB5828267A GB1119090A GB 1119090 A GB1119090 A GB 1119090A GB 58282/67 A GB58282/67 A GB 58282/67A GB 5828267 A GB5828267 A GB 5828267A GB 1119090 A GB1119090 A GB 1119090A
Authority
GB
United Kingdom
Prior art keywords
relating
effect apparatus
gunn effect
gunn
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB58282/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1965T0030042 external-priority patent/DE1256727B/en
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1119090A publication Critical patent/GB1119090A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/864Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B17/00Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices
    • H10N80/10Gunn-effect devices
    • H10N80/103Gunn-effect devices controlled by electromagnetic radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB58282/67A 1965-11-11 1966-11-02 Improvements in or relating to gunn effect apparatus Expired GB1119090A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DET29765A DE1256724B (en) 1965-11-11 1965-11-11 Method for influencing electromagnetic vibrations of a semiconductor body and application of the method
DE1965T0030042 DE1256727B (en) 1965-12-16 1965-12-16 Method for influencing the degree of amplification of an amplifying semiconductor component
DET0030163 1965-12-24
DET30485A DE1256728B (en) 1965-11-11 1966-02-18 Method for influencing electromagnetic oscillations in the microwave range in a semiconductor component and arrangement for carrying out the method

Publications (1)

Publication Number Publication Date
GB1119090A true GB1119090A (en) 1968-07-10

Family

ID=27437644

Family Applications (2)

Application Number Title Priority Date Filing Date
GB58282/67A Expired GB1119090A (en) 1965-11-11 1966-11-02 Improvements in or relating to gunn effect apparatus
GB49213/66A Expired GB1116169A (en) 1965-11-11 1966-11-02 Improvements in or relating to gunn effect apparatus

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB49213/66A Expired GB1116169A (en) 1965-11-11 1966-11-02 Improvements in or relating to gunn effect apparatus

Country Status (4)

Country Link
JP (1) JPS4430536B1 (en)
DE (3) DE1256724B (en)
FR (1) FR1498844A (en)
GB (2) GB1119090A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579143A (en) * 1968-11-29 1971-05-18 North American Rockwell Method for increasing the efficiency of lsa oscillator devices by uniform illumination

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651423A (en) * 1970-06-24 1972-03-21 Advanced Technology Center Inc Logic device employing light-controlled gunn-effect oscillations

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579143A (en) * 1968-11-29 1971-05-18 North American Rockwell Method for increasing the efficiency of lsa oscillator devices by uniform illumination

Also Published As

Publication number Publication date
GB1116169A (en) 1968-06-06
DE1472237B2 (en) 1970-11-26
FR1498844A (en) 1967-10-20
DE1472237A1 (en) 1969-03-27
JPS4430536B1 (en) 1969-12-09
DE1256728B (en) 1967-12-21
DE1256724B (en) 1967-12-21

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