FR1498844A - Montage semi-conducteur à effet de volume - Google Patents

Montage semi-conducteur à effet de volume

Info

Publication number
FR1498844A
FR1498844A FR82779A FR82779A FR1498844A FR 1498844 A FR1498844 A FR 1498844A FR 82779 A FR82779 A FR 82779A FR 82779 A FR82779 A FR 82779A FR 1498844 A FR1498844 A FR 1498844A
Authority
FR
France
Prior art keywords
volume effect
semiconductor volume
effect assembly
assembly
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR82779A
Other languages
English (en)
Inventor
Berthold Bosch
Horst Pollmann
Gerhard Schickle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1965T0030042 external-priority patent/DE1256727B/de
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Application granted granted Critical
Publication of FR1498844A publication Critical patent/FR1498844A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B17/00—Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/103—Gunn-effect devices controlled by electromagnetic radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
FR82779A 1965-11-11 1966-11-07 Montage semi-conducteur à effet de volume Expired FR1498844A (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DET29765A DE1256724B (de) 1965-11-11 1965-11-11 Verfahren zur Beeinflussung von elektromagnetischen Schwingungen eines Halbleiterkoerpers und Anwendung des Verfahrens
DE1965T0030042 DE1256727B (de) 1965-12-16 1965-12-16 Verfahren zur Beeinflussung des Verstaerkungsgrades eines verstaerkenden Halbleiter-Bauelementes
DET0030163 1965-12-24
DET30485A DE1256728B (de) 1965-11-11 1966-02-18 Verfahren zur Beeinflussung von elektromagnetischen Schwingungen im Mikrowellenbereich in einem Halbleiter-Bauelement und Anordnung zur Durchfuehrung des Verfahrens

Publications (1)

Publication Number Publication Date
FR1498844A true FR1498844A (fr) 1967-10-20

Family

ID=27437644

Family Applications (1)

Application Number Title Priority Date Filing Date
FR82779A Expired FR1498844A (fr) 1965-11-11 1966-11-07 Montage semi-conducteur à effet de volume

Country Status (4)

Country Link
JP (1) JPS4430536B1 (fr)
DE (3) DE1256724B (fr)
FR (1) FR1498844A (fr)
GB (2) GB1116169A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579143A (en) * 1968-11-29 1971-05-18 North American Rockwell Method for increasing the efficiency of lsa oscillator devices by uniform illumination
US3651423A (en) * 1970-06-24 1972-03-21 Advanced Technology Center Inc Logic device employing light-controlled gunn-effect oscillations

Also Published As

Publication number Publication date
GB1119090A (en) 1968-07-10
DE1472237B2 (de) 1970-11-26
JPS4430536B1 (fr) 1969-12-09
DE1256728B (de) 1967-12-21
DE1256724B (de) 1967-12-21
DE1472237A1 (de) 1969-03-27
GB1116169A (en) 1968-06-06

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