JPH118337A - Resin-sealed optical semiconductor device and manufacture thereof - Google Patents
Resin-sealed optical semiconductor device and manufacture thereofInfo
- Publication number
- JPH118337A JPH118337A JP9176337A JP17633797A JPH118337A JP H118337 A JPH118337 A JP H118337A JP 9176337 A JP9176337 A JP 9176337A JP 17633797 A JP17633797 A JP 17633797A JP H118337 A JPH118337 A JP H118337A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead
- semiconductor device
- optical semiconductor
- tie bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、樹脂封止型光半導
体装置およびその製造方法に関する。The present invention relates to a resin-sealed optical semiconductor device and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】これまでにＣＤのピックアップ，レーザ
ー光の入光あるいはフォトアンプ用として開発された樹
脂封止型光半導体装置においては、図３に示されるよう
に、光半導体素子を含んだ半導体チップ１１のターミナ
ルとリード１２とを金ワイヤ１３で接続した後、透明樹
脂材１４を用いてモールドしてこれらを樹脂封止した構
成となっている。この場合、光半導体装置１０の入光面
１５は、乱反射を防ぐために、表面研磨されて鏡面とな
っている。2. Description of the Related Art As shown in FIG. 3, in a resin-sealed optical semiconductor device which has been developed for a pickup of a CD, a laser beam input or a photo-amplifier, as shown in FIG. After connecting the terminals of the chip 11 and the leads 12 with the gold wires 13, the terminals are molded using a transparent resin material 14 and are sealed with a resin. In this case, the light incident surface 15 of the optical semiconductor device 10 is polished to a mirror surface to prevent irregular reflection.
【０００３】[0003]
【発明が解決しようとする課題】しかし、このような構
成では、透明樹脂材１４としてエポキシ樹脂が使用され
るために、耐湿特性が悪く、信頼性が低いという問題が
あった。さらに、製品名を捺印（たとえばＡｇを用いた
白色）あるいはレーザーにより刻印しても、入光面以外
のところは鏡面加工されていないために、製品名を判読
できない場合がある。However, in such a configuration, since the epoxy resin is used as the transparent resin material 14, there is a problem that the moisture resistance is poor and the reliability is low. Further, even if the product name is stamped (eg, white using Ag) or stamped with a laser, the product name may not be legible because the mirror surface is not processed except for the light incident surface.
【０００４】[0004]
【課題を解決するための手段】このような問題を解決す
るために、本発明の一態様によれば、半導体チップが金
ワイヤを介してリードのインナリード部分と接続される
とともにこれらは透明樹脂によって覆われており、さら
に入光面を除いて不透明な樹脂によって覆われているこ
とを特徴とする樹脂封止型光半導体装置が提供される。According to one aspect of the present invention, a semiconductor chip is connected to an inner lead portion of a lead via a gold wire and these are connected to a transparent resin. And a resin-sealed optical semiconductor device characterized by being covered with an opaque resin except for a light incident surface.
【０００５】また、本発明の他の態様によれば、半導体
チップのターミナルとリードとを金線で接続した後、透
明樹脂材を用いてこれらを樹脂封止し、この後入光面を
除いて耐湿性の黒色樹脂により封止するようにしたこと
を特徴とする樹脂封止型光半導体装置の製造方法が提供
される。According to another aspect of the present invention, the terminals of the semiconductor chip and the leads are connected to each other with a gold wire, and then these are sealed with a resin using a transparent resin material. And a method of manufacturing a resin-sealed optical semiconductor device characterized by being sealed with a moisture-resistant black resin.
【０００６】また、本発明の他の態様によれば、半導体
集積回路が形成された半導体チップをリードフレーム上
に載置した後、金ワイヤでリードフレームのリードのイ
ンナーリード部分に半導体チップ上の対応したターミナ
ルパッドとを接続し、半導体チップ，金ワイヤおよびイ
ンナーリード部分を透明樹脂でモールドし、ついで、リ
ードの途中に設けられかつ樹脂の流れ止め機能を持った
一次タイバーを切断し、ついで、上述した透明樹脂を完
全に覆うように不透明な樹脂でモールドし、リードの途
中に設けられた２次タイバーを切断して各リードを分離
し、ついで、リードのアウターリード部分をかぎ状に下
方に折り曲げ、通常樹脂の上面を研磨して入光面を露出
させるようにしたことを特徴とする樹脂封止型光半導体
装置の製造方法が提供される。According to another aspect of the present invention, after a semiconductor chip on which a semiconductor integrated circuit is formed is mounted on a lead frame, a gold wire is used to connect the inner lead portion of the lead of the lead frame with the semiconductor chip. Connect the corresponding terminal pad, mold the semiconductor chip, gold wire and inner lead part with transparent resin, then cut the primary tie bar provided in the middle of the lead and having the function of preventing resin flow, The above-mentioned transparent resin is completely covered with an opaque resin, and the secondary tie bar provided in the middle of the lead is cut to separate each lead. Then, the outer lead portion of the lead is hooked downward. A method of manufacturing a resin-sealed optical semiconductor device, characterized in that the light incident surface is exposed by bending and usually polishing the upper surface of the resin. It is subjected.
【０００７】このように構成すれば、入光面を除いて耐
湿性の黒色樹脂により封止するようにしたため、耐湿特
性を従来より向上させて信頼性を高めることができ、捺
印あるいは刻印された製品名をはっきりと判読できる。
また、半導体チップ内に含まれる光半導体素子以外の素
子への光の照射を防ぐことができ、これらの素子の特性
の変更あるいは変動を防ぐことができる。With this configuration, since the light-receiving surface is sealed with a moisture-resistant black resin, the moisture-resistant characteristics can be improved and reliability can be improved. The product name is clearly legible.
In addition, it is possible to prevent light irradiation on elements other than the optical semiconductor element included in the semiconductor chip, and to prevent change or change in the characteristics of these elements.
【０００８】[0008]
【発明の実施の形態】図１（ａ）〜（ｈ） および図２
（ａ），（ｂ）は、本発明による樹脂封止型光半導体装
置の一実施の形態を示している。まず図１（ａ）〜
（ｈ）を用いて樹脂封止型光半導体装置の製造方法を説
明する。1 (a) to 1 (h) and FIG.
1A and 1B show an embodiment of a resin-sealed optical semiconductor device according to the present invention. First, FIG.
A method for manufacturing a resin-sealed optical semiconductor device will be described with reference to FIG.
【０００９】図１（ａ）において、半導体集積回路が形
成された半導体チップ２１をリードフレーム２２上に載
置した後、金ワイヤ２３でリードフレーム２２のリード
２５のインナーリード部分２５ａを半導体チップ２１上
の対応したターミナルパッド（図示せず）と接続する。
そして、半導体チップ２１，金ワイヤ２３およびインナ
ーリード部分２５ａをエポキシ樹脂のような透明樹脂２
６でモールドする。In FIG. 1A, after a semiconductor chip 21 on which a semiconductor integrated circuit is formed is mounted on a lead frame 22, an inner lead portion 25a of a lead 25 of the lead frame 22 is connected to the semiconductor chip 21 with a gold wire 23. Connect to the corresponding terminal pad (not shown) above.
Then, the semiconductor chip 21, the gold wire 23, and the inner lead portion 25a are formed of a transparent resin 2 such as an epoxy resin.
Mold with 6.
【００１０】ついで、図１（ｂ）に移り、リード２５の
途中に設けられかつ樹脂の流れ止め機能を持った一次タ
イバー２７を切断し、図１（ｃ）の状態にする。つい
で、上述した透明樹脂２６を完全に覆うように不透明な
樹脂２８でモールドし、図１（ｄ）の状態とする。この
不透明樹脂としては、吸水性が低くなるようにエポキシ
樹脂にシリコン，フィラー（シリコンの結晶），カーボ
ン等を添加した不透明な通常樹脂が用いられる。この場
合、色は通常黒色である。Next, referring to FIG. 1B, the primary tie bar 27 provided in the middle of the lead 25 and having the function of preventing the resin from flowing is cut off to bring it to the state shown in FIG. 1C. Then, the above-described transparent resin 26 is completely molded with an opaque resin 28 so as to completely cover the above-described transparent resin 26, and the state shown in FIG. As the opaque resin, an opaque ordinary resin obtained by adding silicon, filler (crystal of silicon), carbon, or the like to an epoxy resin so as to reduce water absorption is used. In this case, the color is usually black.
【００１１】この後、リード２５の途中に設けられた２
次タイバー３０を切断して図１（ｅ）に示されるように
各リード２５を分離する。ついで、リード２５のアウタ
ーリード部分２５ｂをかぎ状に下方に折り曲げて図１
（ｆ）および図１（ｇ）に示される状態にする。そして
通常樹脂２８の上面を研磨して入光面３１を露出させ
る。After that, the 2 provided in the middle of the lead 25
Next, the tie bar 30 is cut to separate the leads 25 as shown in FIG. Next, the outer lead portion 25b of the lead 25 is bent downward in a hook shape as shown in FIG.
(F) and the state shown in FIG. 1 (g). Then, the upper surface of the resin 28 is usually polished to expose the light incident surface 31.
【００１２】図２（ａ）および（ｂ）は、このような工
程を経て作られた樹脂封止型光半導体装置の一例を示し
ている。この場合、透明樹脂２６の周囲を通常樹脂で覆
っているため、透明樹脂によって形成された入光面３１
を露出させる部分３１ａは、テーパを持った突起の頂部
に形成されており、このため、この部分の通常樹脂の削
る量（厚み）によって入光面の露出面積を変更でき、入
光量を調節することができる。FIGS. 2A and 2B show an example of a resin-sealed optical semiconductor device manufactured through such steps. In this case, since the periphery of the transparent resin 26 is usually covered with the resin, the light incident surface 31 formed of the transparent resin is formed.
Is formed on the top of the tapered projection. Therefore, the exposed area of the light-entering surface can be changed by adjusting the amount (thickness) of the ordinary resin shaved at this portion, and the amount of incident light can be adjusted. be able to.
【００１３】以上述べたような製造方法を用いれば、透
明樹脂の周囲を耐湿性の通常樹脂で覆ったため、樹脂封
止型光半導体装置の耐湿性を向上して信頼性を高めるこ
とができる。また、入光面を除いて入射光をカットして
あるため、半導体チップ内に含まれる光半導体素子以外
の素子への光の照射を防ぐことができ、これらの素子の
特性の変更あるいは変動を防ぐことができる。また、透
明樹脂の周囲を不透明な通常樹脂で覆ったため、頂部に
入光面を形成する突起の削る量（厚み）によって入光面
の露出面積を変更でき、入光量を調節することができ
る。When the above-described manufacturing method is used, since the periphery of the transparent resin is covered with a moisture-resistant ordinary resin, the moisture resistance of the resin-sealed optical semiconductor device can be improved and the reliability can be increased. In addition, since the incident light is cut except for the light incident surface, it is possible to prevent light irradiation to elements other than the optical semiconductor element included in the semiconductor chip, and to change or change the characteristics of these elements. Can be prevented. Further, since the periphery of the transparent resin is covered with an opaque normal resin, the exposed area of the light incident surface can be changed by the shaving amount (thickness) of the projection forming the light incident surface on the top, and the amount of incident light can be adjusted.
【００１４】[0014]
【発明の効果】以上述べたような樹脂封止型光半導体装
置およびその製造方法を用いれば、透明樹脂の周囲を耐
湿性の通常樹脂で覆ったため、樹脂封止型光半導体装置
の耐湿性を向上して信頼性を高めることができる。ま
た、入光面を除いて入射光をカットしてあるため、半導
体チップ内に含まれる光半導体素子以外の素子への光の
照射を防ぐことができ、これらの素子の特性の変更ある
いは変動を防ぐことができる。また、透明樹脂の周囲を
不透明な通常樹脂で覆ったため、頂部に入光面を形成す
る突起の削る量（厚み）によって入光面の露出面積を変
更でき、入光量を調節することができる。According to the resin-sealed optical semiconductor device and the method of manufacturing the same as described above, since the periphery of the transparent resin is covered with a normal moisture-resistant resin, the moisture resistance of the resin-sealed optical semiconductor device is improved. And reliability can be improved. In addition, since the incident light is cut except for the light incident surface, it is possible to prevent light irradiation to elements other than the optical semiconductor element included in the semiconductor chip, and to change or change the characteristics of these elements. Can be prevented. Further, since the periphery of the transparent resin is covered with an opaque normal resin, the exposed area of the light incident surface can be changed by the shaving amount (thickness) of the projection forming the light incident surface on the top, and the amount of incident light can be adjusted.
【図１】（ａ）〜（ｈ）は、本発明による樹脂封止型光
半導体装置の製造方法の一実施の形態を示す工程図であ
る。FIGS. 1A to 1H are process diagrams showing one embodiment of a method for manufacturing a resin-sealed optical semiconductor device according to the present invention.
【図２】（ａ），（ｂ）は、図１の工程によって作られ
た樹脂封止型光半導体装置の平面図および側面図であ
る。FIGS. 2A and 2B are a plan view and a side view of a resin-sealed optical semiconductor device manufactured by the process of FIG.
【図３】（ａ），（ｂ）は従来の樹脂封止型光半導体装
置の一例を示す平面図および側面図である。FIGS. 3A and 3B are a plan view and a side view showing an example of a conventional resin-sealed optical semiconductor device.
１１，２１ 半導体チップ２１ ２２ リードフレーム２２ １３，２３ 金ワイヤ２３ １２，２５ リード ２５ａ インナーリード部分 ２５ｂ アウターリード部分 １４，２６ 透明樹脂 ２７ 一次タイバー ２８ 不透明な樹脂 ３０ ２次タイバー １５，３１ 入光面 11, 21 Semiconductor chip 21 22 Lead frame 22 13, 23 Gold wire 23 12, 25 Lead 25a Inner lead portion 25b Outer lead portion 14, 26 Transparent resin 27 Primary tie bar 28 Opaque resin 30 Secondary tie bar 15, 31 Light entry surface
Claims (5)
のインナリード部分と接続されるとともにこれらは透明
樹脂によって覆われており、さらに入光面を除いて不透
明な樹脂によって覆われていることを特徴とする樹脂封
止型光半導体装置。1. A semiconductor chip is connected to inner lead portions of leads via gold wires, and these are covered with a transparent resin, and are further covered with an opaque resin except for a light incident surface. Characteristic resin-sealed optical semiconductor device.
ことを特徴とする請求項１記載の樹脂封止型光半導体装
置。2. The resin-sealed optical semiconductor device according to claim 1, wherein said opaque resin is a black resin.
金線で接続した後、透明樹脂材を用いてこれらを樹脂封
止し、この後入光面を除いて耐湿性の不透明樹脂により
封止するようにしたことを特徴とする樹脂封止型光半導
体装置の製造方法。3. After connecting the terminal of the semiconductor chip and the lead with a gold wire, they are sealed with a transparent resin material and then sealed with a moisture-resistant opaque resin except for the light incident surface. A method of manufacturing a resin-sealed optical semiconductor device, characterized in that:
プをリードフレーム上に載置した後、金ワイヤでリード
フレームのリードのインナーリード部分に半導体チップ
上の対応したターミナルパッドとを接続し、半導体チッ
プ，金ワイヤおよびインナーリード部分を透明樹脂でモ
ールドし、ついで、リードの途中に設けられかつ樹脂の
流れ止め機能を持った一次タイバーを切断し、ついで、
上述した透明樹脂を完全に覆うように不透明な樹脂でモ
ールドし、リードの途中に設けられた２次タイバーを切
断して各リードを分離し、ついで、リードのアウターリ
ード部分をかぎ状に下方に折り曲げ、通常樹脂の上面を
研磨して入光面を露出させるようにしたことを特徴とす
る樹脂封止型光半導体装置の製造方法。4. After mounting a semiconductor chip on which a semiconductor integrated circuit is formed on a lead frame, connecting a corresponding terminal pad on the semiconductor chip to an inner lead portion of a lead of the lead frame with a gold wire. The chip, the gold wire and the inner lead are molded with a transparent resin, and then the primary tie bar provided in the middle of the lead and having the function of preventing the resin from flowing is cut off.
The above-mentioned transparent resin is completely covered with an opaque resin, and the secondary tie bar provided in the middle of the lead is cut to separate each lead. Then, the outer lead portion of the lead is hooked downward. A method for manufacturing a resin-sealed optical semiconductor device, comprising bending and usually polishing the upper surface of a resin to expose a light incident surface.
流れ止め用の第１のタイバーとその外側に配置されかつ
不透明樹脂の流れ止め用の第２のタイバーを有し、第１
のタイバーは、透明樹脂モールド後切断され、第２のタ
イバーは不透明樹脂モールド後切断されることを特徴と
する請求項４記載の樹脂封止型光半導体装置の製造方
法。5. The lead frame includes a first tie bar for stopping the flow of the transparent resin and a second tie bar disposed outside the first tie bar for stopping the flow of the opaque resin.
5. The method for manufacturing a resin-sealed optical semiconductor device according to claim 4, wherein the tie bar is cut after transparent resin molding, and the second tie bar is cut after opaque resin molding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9176337A JPH118337A (en) | 1997-06-17 | 1997-06-17 | Resin-sealed optical semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9176337A JPH118337A (en) | 1997-06-17 | 1997-06-17 | Resin-sealed optical semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH118337A true JPH118337A (en) | 1999-01-12 |
Family
ID=16011829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9176337A Pending JPH118337A (en) | 1997-06-17 | 1997-06-17 | Resin-sealed optical semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH118337A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015026798A (en) * | 2013-07-25 | 2015-02-05 | 菱生精密工業股▲分▼有限公司 | Package for optical module and method for manufacturing the same |
-
1997
- 1997-06-17 JP JP9176337A patent/JPH118337A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015026798A (en) * | 2013-07-25 | 2015-02-05 | 菱生精密工業股▲分▼有限公司 | Package for optical module and method for manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR970005706B1 (en) | Ccd and the manufacturing method | |
| JP3507251B2 (en) | Optical sensor IC package and method of assembling the same | |
| US4877756A (en) | Method of packaging a semiconductor laser and photosensitive semiconductor device | |
| JPH10144965A (en) | Optical semiconductor device and its manufacture | |
| JPH118337A (en) | Resin-sealed optical semiconductor device and manufacture thereof | |
| US20020088981A1 (en) | Optical unit incorporating light-emitting or light-receiving element coated by resin | |
| JPS60189940A (en) | Manufacture of resin seal type semiconductor device | |
| JP3332809B2 (en) | Optical element | |
| JP2501811Y2 (en) | Optical semiconductor device | |
| KR100333386B1 (en) | chip scale package | |
| KR200170634Y1 (en) | Semiconductor package | |
| JP2707659B2 (en) | Resin-sealed semiconductor device | |
| JPH09129812A (en) | Semiconductor device | |
| JPH09129803A (en) | Hall element and its manufacture | |
| JPH07101729B2 (en) | Multi-chip semiconductor device and manufacturing method thereof | |
| JP2755719B2 (en) | Method for manufacturing resin-encapsulated semiconductor device | |
| JP3805733B2 (en) | Manufacturing method of semiconductor device | |
| JP2001068741A (en) | Semiconductor light emitting device | |
| JP2000307131A (en) | Light transmissive semiconductor device | |
| JPH0521647A (en) | Resin sealed type semiconductor device and manufacture thereof | |
| JPH05136293A (en) | Optical semiconductor device | |
| JP2549988Y2 (en) | Optical semiconductor device | |
| KR960000707B1 (en) | Manufacturing method for package | |
| JP2000286212A (en) | Plastic package | |
| JP3472411B2 (en) | Photo MOS relay |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20040907 |