JP2549988Y2 - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JP2549988Y2 JP2549988Y2 JP1991003905U JP390591U JP2549988Y2 JP 2549988 Y2 JP2549988 Y2 JP 2549988Y2 JP 1991003905 U JP1991003905 U JP 1991003905U JP 390591 U JP390591 U JP 390591U JP 2549988 Y2 JP2549988 Y2 JP 2549988Y2
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- semiconductor device
- envelope
- view
- condenser lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Description
【0001】[0001]
【産業上の利用分野】本考案は、光半導体装置の構造に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an optical semiconductor device.
【0002】[0002]
【従来の技術】従来のサイドビユータイプの光半導体装
置の構造及び製造方法を図4,5に示す。2. Description of the Related Art FIGS. 4 and 5 show the structure and manufacturing method of a conventional side-view type optical semiconductor device.
【0003】図4に示す様に、光半導体素子(発光素子
または受光素子)1をリードフレーム2の搭載用リード
端子3に搭載し、ボンデイングワイヤ4によりリードフ
レーム2の結線用リード端子5と電気的接続した後、図
5に示す様に、光半導体素子1の外部周辺を透光性樹脂
により被覆成型して外囲器6を形成する。更に、タイバ
ー7及びクレードル8を各リード端子2,3を独立させ
る形で、カツト位置A,Bでカツトして光半導体装置が
完成する。[0003] As shown in FIG. 4, an optical semiconductor element (light emitting element or light receiving element) 1 is mounted on a mounting lead terminal 3 of a lead frame 2, and is electrically connected to a connection lead terminal 5 of the lead frame 2 by a bonding wire 4. After the electrical connection, as shown in FIG. 5, the outer periphery of the optical semiconductor element 1 is covered and molded with a transparent resin to form an envelope 6. Further, the tie bar 7 and the cradle 8 are cut at the cutting positions A and B in such a manner that the respective lead terminals 2 and 3 are independent, thereby completing the optical semiconductor device.
【0004】上記光半導体装置において、発光素子を用
いると、図6−Aに示す様に、発光素子1より発光され
た光は集光レンズ6aの効果により集光され、図6−B
の指向特性と得る。When a light emitting element is used in the optical semiconductor device, light emitted from the light emitting element 1 is condensed by the effect of the condenser lens 6a as shown in FIG.
Directional characteristics.
【0005】[0005]
【考案が解決しようとする課題】一般に、光半導体装置
の受光素子に入射する光量及び発光素子より発光された
光の方向は、外囲器(パツケージ)に形成された集光レ
ンズの形状により決定される。Generally, the amount of light incident on the light-receiving element of the optical semiconductor device and the direction of the light emitted from the light-emitting element are determined by the shape of the condenser lens formed on the package. Is done.
【0006】従来の光半導体装置においては、パツケー
ジの集光レンズは一種類であるため、上記の受光量及び
発光方向、すなわち指向特性は一つのパツケージでは一
種類しか得られない。よつて、市場の多様な指向特性の
要望に答えるためには多数の成形金型等の設備が必要と
なる。In a conventional optical semiconductor device, since there is only one kind of condensing lens of a package, only one kind of light receiving amount and light emitting direction, that is, directivity, can be obtained in one package. Therefore, in order to meet the demands of various directional characteristics in the market, a large number of molding dies and the like are required.
【0007】本考案は、上記に鑑み、従来と同一部材及
び設備を用いて二種類の指向特性を選択可能とする光半
導体装置の提供を目的とする。SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide an optical semiconductor device capable of selecting two types of directional characteristics using the same members and equipment as before.
【0008】[0008]
【課題を解決するための手段】本考案請求項1による課
題解決手段は、図1,2の如く、リードフレーム2の平
面部となる表面または裏面のいずれか一方に選択的に搭
載された光半導体素子1をモールドして成る光半導体装
置であつて、外囲器6の表面及び裏面に指向特性の異な
る集光レンズ10,11が設けられたものである。Problem solving means according to the present invention according to claim 1 Means for Solving the Problems], as shown in FIG. 1, the lead frame 2 Rights
Shall apply to the optical semiconductor element 1 is selectively mounted on either the front or back of the surface with a mold and an optical semiconductor device comprising, a condenser lens 10 having different directional characteristics in the surface and back of the envelope 6 , 11 are provided.
【0009】[0009]
【0010】[0010]
【作用】上記請求項1による課題解決手段において、外
囲器6の表面及び裏面にそれぞれ指向特性の異なつた集
光レンズ10,11を設け、一つの外囲器6にて二種類
のレンズを有する構造とすることで、光半導体素子1の
リードフレーム2の平面部への搭載を、必要とするレン
ズ側に行うことにより、従来と同一部材及び設備を用い
て一つのパツケージにて二種類の指向特性が選択可能と
なる。According to the first aspect of the present invention, condensing lenses 10 and 11 having different directivity characteristics are provided on the front surface and the back surface of the envelope 6, respectively. With this structure, the optical semiconductor element 1 is mounted on the flat portion of the lead frame 2 on the required lens side, so that two types of packages can be formed in one package using the same members and equipment as before. The directional characteristics can be selected.
【0011】なお、指向特性としては、光半導体素子1
に発光素子を利用した場合は、発光された光の方向であ
り、受光素子を利用した場合は、入射する光量である。 The directional characteristics of the optical semiconductor device 1
When a light emitting element is used for
In the case where a light receiving element is used, this is the amount of incident light.
【0012】[0012]
【実施例】以下、本考案の一実施例を図1ないし図3に
基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS.
【0013】図1は本考案の一実施例の光半導体装置に
おいてモールド完了状態を示す図であつて、図1−Aは
外囲器の表面側の集光レンズを利用した場合のモールド
完了状態を示す平面図、図1−Bは図1−Aの側面図、
図1−Cは外囲器の裏面側の集光レンズを利用した場合
のモールド完了状態を示す平面図、図1−Dは図1−C
の側面図である。FIG. 1 is a diagram showing a completed state of a mold in an optical semiconductor device according to an embodiment of the present invention, and FIG. 1-A is a completed state of a mold when a condenser lens on the front side of an envelope is used. FIG. 1-B is a side view of FIG. 1-A,
FIG. 1-C is a plan view showing a mold completed state when a condenser lens on the back side of the envelope is used, and FIG.
FIG.
【0014】図2は同じくワイヤボンド完了状態を示す
図であつて、図2−Aは図1−A,Bに対応したワイヤ
ボンド完了状態を示す平面図、図2−Bは図2−Aの側
面図、図2−Cは図1−C,Dに対応したワイヤボンド
完了状態を示す平面図、図2−Dは図2−Cの側面図で
ある。FIG. 2 is a view showing a completed state of wire bonding, FIG. 2A is a plan view showing a completed state of wire bonding corresponding to FIGS. 1A and 1B, and FIG. 2-C is a plan view showing a completed state of wire bonding corresponding to FIGS. 1-C and D, and FIG. 2-D is a side view of FIG. 2-C.
【0015】図3−Aは図1−A,Bに対応する光半導
体装置の発光状態を示す光線図、図3−Bは同じくその
指向特性を示す図、図3−Cは図1−C,Dに対応する
光半導体装置の発光状態を示す光線図、図3−Dは同じ
くその指向特性を示す図である。FIG. 3A is a ray diagram showing a light emitting state of the optical semiconductor device corresponding to FIGS. 1A and 1B, FIG. 3B is a diagram showing the directional characteristics thereof, and FIG. 3D is a ray diagram showing a light emitting state of the optical semiconductor device corresponding to D, and FIG.
【0016】なお、図5,6に示した従来技術と同一機
能部品については同一符号を付している。The same functional parts as those in the prior art shown in FIGS.
【0017】図示の如く、本実施例の光半導体装置は、
光半導体素子1を透光性樹脂にてモールドして成るサイ
ドビユータイプの光半導体装置であつて、外囲器6の表
面に指向性の高い第一集光レンズ10が設けられ、裏面
に第一集光レンズ10に比べて指向性の低い第二集光レ
ンズ11が設けられている。As shown in the figure, the optical semiconductor device of this embodiment is
1. A side-view type optical semiconductor device in which an optical semiconductor element 1 is molded with a translucent resin, wherein a first condensing lens 10 having high directivity is provided on a surface of an envelope 6, and a first condensing lens 10 is provided on a rear surface. A second condenser lens 11 having lower directivity than one condenser lens 10 is provided.
【0018】前記光半導体素子1は、発光素子(LE
D)が用いられており、図2の如く、リードフレーム2
に搭載されている。The optical semiconductor element 1 is a light emitting element (LE)
D) is used, and as shown in FIG.
It is installed in.
【0019】このリードフレーム2は、光半導体素子1
が搭載される搭載用リード端子3と、光半導体素子1と
ボンデイングワイヤ4を介して内部結線される結線用リ
ード端子5と、各リード端子3,5の中間位置でこれら
を連結するタイバー7と、各リード端子3,5を片持ち
支持するクレードル8とから構成されている。そして、
搭載用リード端子3の先端には、光半導体素子1がダイ
ボンドされる搭載片3aが設けられ、結線用リード端子
5の先端には、光半導体素子1と内部結線される結線片
5aが設けられている。The lead frame 2 is composed of the optical semiconductor device 1
And a tie bar 7 connecting the lead terminals 3 to each other at an intermediate position between the lead terminals 3 and 5, a connection lead terminal 5 internally connected to the optical semiconductor element 1 via a bonding wire 4, And a cradle 8 for supporting each of the lead terminals 3 and 5 in a cantilever manner. And
A mounting piece 3a to which the optical semiconductor element 1 is die-bonded is provided at the tip of the mounting lead terminal 3, and a connecting piece 5a to be internally connected to the optical semiconductor element 1 is provided at a tip of the connecting lead terminal 5. ing.
【0020】前記外囲器6は、図1の如く、透光樹脂に
て矩形状に形成されており、その裏面には、第二集光レ
ンズ11を外囲器6から突出させないための凹部20が
設けられている。該凹部20は、図1−Cの如く、第二
集光レンズ11の直径より僅かに大きい円形に形成され
ている。As shown in FIG. 1, the envelope 6 is formed of a light-transmitting resin in a rectangular shape, and has a concave portion on its back surface for preventing the second condenser lens 11 from projecting from the envelope 6. 20 are provided. The recess 20 is formed in a circular shape slightly larger than the diameter of the second condenser lens 11, as shown in FIG. 1-C.
【0021】前記集光レンズ10,11は、半球レンズ
であつて、外囲器6と一体的に成形されている。The condenser lenses 10 and 11 are hemispherical lenses, and are formed integrally with the envelope 6.
【0022】次に、上記光半導体装置の製造方法につい
て説明する。Next, a method for manufacturing the optical semiconductor device will be described.
【0023】まず、光半導体素子1をリードフレーム2
の搭載片3aに搭載し、ボンデイングワイヤ4により光
半導体素子1とリードフレーム2の結線片5aとを電気
的接続する。First, the optical semiconductor device 1 is connected to the lead frame 2.
Is mounted on the mounting piece 3a, and the optical semiconductor element 1 and the connection piece 5a of the lead frame 2 are electrically connected by the bonding wire 4.
【0024】しかる後、金型Wをセツトし、光半導体素
子1の外部周辺を透光性樹脂によりモールドする(図1
−B,D参照)。そうすると、金型Wには曲率の異なる
半球凹部30,31が設けられていることから、表面及
び裏面に指向特性の異なる集光レンズ10,11を有す
る外囲器6が形成される。Thereafter, the mold W is set, and the outer periphery of the optical semiconductor element 1 is molded with a transparent resin (FIG. 1).
-B, D). Then, since the mold W is provided with the hemispherical concave portions 30 and 31 having different curvatures, the envelope 6 having the condensing lenses 10 and 11 having different directivity characteristics on the front and back surfaces is formed.
【0025】更に、タイバー7及びクレードル8を各リ
ード端子3,5を独立させる形でカツト位置A,B(図
1参照)でカツトして光半導体装置が完成する。Further, the optical semiconductor device is completed by cutting the tie bar 7 and the cradle 8 at the cutting positions A and B (see FIG. 1) so that the respective lead terminals 3 and 5 are independent.
【0026】このとき、外囲器6の表面に設けられた第
一集光レンズ10を利用する場合には、図2−A,Bの
様に、光半導体素子1を搭載片3aの第一集光レンズ1
0側、すなわち表面に搭載しモールドすれば、図1−
A,Bに示す光半導体装置となる。At this time, when the first condenser lens 10 provided on the surface of the envelope 6 is used, the optical semiconductor element 1 is attached to the first piece 3a of the mounting piece 3a as shown in FIGS. Condensing lens 1
If it is mounted on the 0 side, that is, the surface, and molded,
The optical semiconductor device shown in FIGS.
【0027】これにより、光半導体素子(発光素子)1
の発光状態は、図3−Aの如く、第一集光レンズ10の
レンズ効果によりレンズ中心部の光線密度が高くなり、
図3−Bの指向特性を得る。Thus, the optical semiconductor device (light emitting device) 1
As shown in FIG. 3A, the light emitting state of the lens becomes high due to the lens effect of the first condenser lens 10,
The directional characteristics shown in FIG.
【0028】一方、外囲器6の裏面に設けられた第二集
光レンズ11を利用する場合には、図1−C,Dの様
に、光半導体素子1を搭載片3aの第二集光レンズ11
側、すなわち裏面に搭載しモールドすれば、図1−C,
Dに示す光半導体装置となる。On the other hand, when the second condenser lens 11 provided on the back surface of the envelope 6 is used, as shown in FIGS. Optical lens 11
If it is mounted and molded on the side, that is, the back side, FIG.
The optical semiconductor device shown in FIG.
【0029】これにより、光半導体素子(発光素子)1
の発光状態は、図3−Cの如く、第二集光レンズ11の
レンズ効果はあるが図1−A,Bの光半導体装置に比べ
ると光線密度は低くなり、図3−Cの指向特性を得る。Thus, the optical semiconductor device (light emitting device) 1
3C has a lens effect of the second condenser lens 11 as shown in FIG. 3C, but the light density is lower than that of the optical semiconductor device of FIGS. 1A and 1B, and the directional characteristic of FIG. Get.
【0030】また、外囲器6の裏面に凹部20を形成し
ていることから、第二集光レンズ11が外囲器6から突
出せず、外囲器6のフラツト面を確保することができ
る。このため、基板やホルダー等へのアセンブリ作業性
が向上する。Further, since the concave portion 20 is formed on the back surface of the envelope 6, the second condenser lens 11 does not protrude from the envelope 6, so that the flat surface of the envelope 6 can be secured. it can. For this reason, the workability of assembling to a substrate, a holder or the like is improved.
【0031】なお、本考案は、上記実施例に限定される
ものではなく、本考案の範囲内で上記実施例に多くの修
正および変更を加え得ることは勿論である。It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that many modifications and changes can be made to the above-described embodiment within the scope of the present invention.
【0032】上記実施例では、光半導体素子1として発
光素子を利用した場合について記載したが、受光素子を
利用してもよい。In the above embodiment, the case where a light emitting element is used as the optical semiconductor element 1 has been described, but a light receiving element may be used.
【0033】また、第一集光レンズ及び第二集光レンズ
の配置を逆にしてもよく、凹部を表面あるいは表、裏両
面に設けてもよい。Further, the arrangement of the first condenser lens and the second condenser lens may be reversed, and the concave portion may be provided on the front surface or both front and rear surfaces.
【0034】[0034]
【考案の効果】以上の説明から明らかな通り、本考案請
求項1によると、外囲器の表面及び裏面にそれぞれ異な
つた指向特性を有するレンズを設け、一つの外囲器にて
二種類のレンズを有する構造とすることで、光半導体素
子のリードフレームの平面部への搭載を、必要とするレ
ンズ側に行うことにより、従来と同一部材及び設備を用
いて一つの外囲器にて二種類の指向特性が選択可能とな
る。As is apparent from the above description, according to the first aspect of the present invention, lenses having different directional characteristics are provided on the front and back surfaces of the envelope, and two kinds of lenses are provided by one envelope. With a structure having a lens, the optical semiconductor element can be mounted on the flat part of the lead frame on the required lens side, so that the same member and equipment as those in the related art can be used and a single envelope can be used. Different directional characteristics can be selected.
【0035】[0035]
【図1】図1は本考案の一実施例の光半導体装置におい
てモールド完了状態を示す図であつて、図1−Aは外囲
器の表面側の集光レンズを利用した場合のモールド完了
状態を示す平面図、図1−Bは図1−Aの側面図、図1
−Cは外囲器の裏面側の集光レンズを利用した場合のモ
ールド完了状態を示す平面図、図1−Dは図1−Cの側
面図である。FIG. 1 is a view showing a completed state of an optical semiconductor device according to an embodiment of the present invention; FIG. 1A is a view showing completion of molding when a condenser lens on the front side of an envelope is used; 1B is a side view of FIG. 1A, FIG.
FIG. 1C is a plan view showing a completed mold state when a condenser lens on the back side of the envelope is used, and FIG. 1D is a side view of FIG. 1C.
【図2】図2は同じくワイヤボンド完了状態を示す図で
あつて、図2−Aは図1−A,Bに対応したワイヤボン
ド完了状態を示す平面図、図2−Bは図2−Aの側面
図、図2−Cは図1−C,Dに対応したワイヤボンド完
了状態を示す平面図、図2−Dは図2−Cの側面図であ
る。FIG. 2 is a view showing a state where wire bonding is completed, FIG. 2A is a plan view showing a state where wire bonding is completed corresponding to FIGS. 1A and 1B, and FIG. A is a side view, FIG. 2-C is a plan view showing a completed state of wire bonding corresponding to FIGS. 1-C and D, and FIG. 2-D is a side view of FIG. 2-C.
【図3】図3−Aは図1−A,Bに対応する光半導体装
置の発光状態を示す光線図、図3−Bは同じくその指向
特性を示す図、図3−Cは図1−C,Dに対応する光半
導体装置の発光状態を示す光線図、図3−Dは同じくそ
の指向特性を示す図である。FIG. 3A is a ray diagram showing a light emitting state of the optical semiconductor device corresponding to FIGS. 1A and 1B, FIG. 3B is a diagram showing the directional characteristics thereof, and FIG. FIG. 3D is a ray diagram showing a light emitting state of the optical semiconductor device corresponding to C and D, and FIG.
【図4】図4は従来の光半導体装置においてワイヤボン
ド完了状態を示す図であつて、図4−Aは平面図、図4
−Bは側面図である。FIG. 4 is a view showing a completed state of wire bonding in the conventional optical semiconductor device, FIG. 4-A is a plan view, and FIG.
-B is a side view.
【図5】図5は同じくモールド完了状態を示す図であつ
て、図5−Aは平面図、図5−Bは側面図である。5 is a view showing a completed state of the mold, FIG. 5A is a plan view, and FIG. 5B is a side view.
【図6】図6−Aは従来の光半導体装置の発光状態を示
す光線図、図6−Bは指向特性を示す図である。FIG. 6A is a ray diagram showing a light emitting state of a conventional optical semiconductor device, and FIG. 6B is a diagram showing directional characteristics.
1 光半導体素子 2 リードフレーム 6 外囲器 10,11 集光レンズ 20 凹部 DESCRIPTION OF SYMBOLS 1 Optical semiconductor element 2 Lead frame 6 Envelope 10, 11 Condensing lens 20 Depression
Claims (1)
は裏面のいずれか一方に選択的に搭載された光半導体素
子をモールドして成る光半導体装置であつて、外囲器の
表面及び裏面に指向特性の異なる集光レンズが設けられ
たことを特徴とする光半導体装置。1. A surface or a flat portion of a lead frame.
Is an optical semiconductor device formed by molding an optical semiconductor element selectively mounted on one of the back surfaces, wherein condensing lenses having different directional characteristics are provided on the front surface and the back surface of the envelope. Optical semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1991003905U JP2549988Y2 (en) | 1991-02-05 | 1991-02-05 | Optical semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1991003905U JP2549988Y2 (en) | 1991-02-05 | 1991-02-05 | Optical semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04113465U JPH04113465U (en) | 1992-10-05 |
JP2549988Y2 true JP2549988Y2 (en) | 1997-10-08 |
Family
ID=31898709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1991003905U Expired - Lifetime JP2549988Y2 (en) | 1991-02-05 | 1991-02-05 | Optical semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2549988Y2 (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54134992A (en) * | 1978-04-12 | 1979-10-19 | Toshiba Corp | Semiconductor device |
JPS6320464U (en) * | 1986-07-25 | 1988-02-10 | ||
JPH01169056U (en) * | 1988-05-19 | 1989-11-29 |
-
1991
- 1991-02-05 JP JP1991003905U patent/JP2549988Y2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH04113465U (en) | 1992-10-05 |
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