JPH1174565A - Light-emission diode array - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emission diode array wherein variation in light- emission of a light-element caused by dislocation of an electrode pattern is settled. SOLUTION: Relating to the light-emission diode array, island-like conductive semiconductor layers 2 are provided in plural numbers in a row on a substrate 1, an invert conductive semiconductor layer 3 is laminated on the conductive semiconductor layer 2 so that an exposed part R is formed on one end part of the conductive semiconductor layer 2, and the same first electrode 4 is connected to each adjoining exposed part R of the conductive semiconductor layer 2, while the same electrode 5 is connected to the invert conductive semiconductor layer 3 on the conductive semiconductor layer 2 where the different first electrode 4 is connected. Here, a plurality of exposed parts R of the conductive semiconductor layer 2 are provided on the same side as the row.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode array, and more particularly, to a light emitting diode array used as an exposure source of a photosensitive drum for a page printer.

[0002]

2. Description of the Related Art FIGS. 7 and 8 show a conventional light emitting diode array. FIG.
FIG. 8 is a sectional view taken along line AA in FIG. 7. 7 and 8, 21 is a semiconductor substrate, 22 is a semiconductor layer of one conductivity type,
23 is a reverse conductivity type semiconductor layer, 24 is a first electrode, and 25 is a second electrode.

[0003] The semiconductor substrate 1 is made of, for example, silicon (Si).
And a single crystal semiconductor substrate such as gallium arsenide (GaAs). The one conductivity type semiconductor layer 22 and the opposite conductivity type semiconductor layer 23 are made of a compound semiconductor layer such as gallium arsenide or aluminum gallium arsenide. One conductivity type semiconductor layer 22
A semiconductor junction is formed at the interface between the semiconductor layer 23 and the opposite conductive type. The one-conductivity-type semiconductor layer 22 and the opposite-conductivity-type semiconductor layer 23 are formed into an island shape by, for example, mesa etching after forming a single crystal semiconductor layer made of gallium arsenide, aluminum gallium arsenide, or the like by, for example, MOCVD or MBE. Is done.

A first electrode 24 is formed on almost the entire back surface of the semiconductor substrate 1. A protective film 26 made of, for example, silicon nitride (SiN _x ) is formed on the surface portions of the one conductivity type semiconductor layer 22 and the opposite conductivity type semiconductor layer 23. , A second electrode 25 made of, for example, gold (Au) is formed. The second electrode 25 is connected to the adjacent semiconductor layer 22 from the upper surface portion of the opposite conductivity type semiconductor layer 23 to the vicinity of the end surface of the semiconductor substrate 21 via the wall surface portion.
23 are formed so as to extend alternately to the other end face side. Note that the second electrode 25 may be provided on the same side of the row of the semiconductor layers 22 and 23 in some cases.

The island-like semiconductor layers 22 and 23 and the first electrode 24
Each of the light emitting diodes is constituted by the second electrode 25 and the light emitting diodes are arranged on the semiconductor substrate 21 so as to be arranged in a line. The second electrode 25 is connected to an external circuit at a wide portion thereof by a bonding wire or the like.

In such a light emitting diode array, for example, when a current flows in a forward direction from the second electrode 25 to the first electrode 24, the minority carriers are transferred to the one conductivity type semiconductor layer 22 and the opposite conductivity type semiconductor layer 23. Is injected and emits light by radiative recombination with majority carriers in the layer. In addition, by selecting a second electrode 2 of any of the light emitting elements formed in a row and causing a current to flow to emit light, the light emitting element is used as an exposure source of a photosensitive drum for a page printer, for example.

However, in this conventional light emitting diode array, a first electrode 24 is provided on the back side of the semiconductor substrate 21 and a second electrode 25 is provided on the front side of the semiconductor substrate 21.
Provided, the first electrode 24 and the second electrode 2
There was a problem that the forming process of No. 5 was performed twice and the manufacturing process became complicated. Further, the first electrode 24 and the second electrode 2
If 5 is located on the front and back surfaces of the semiconductor substrate 21, there is a problem that the connection work is difficult when connecting to an external circuit by a wire bonding method or the like.

Therefore, the present inventors have filed a Japanese Patent Application No. 7-1928.
No. 57, as shown in FIGS. 9 and 10, a one-conductivity-type semiconductor layer 22 is provided on a semiconductor substrate 21, and the one-conductivity-type semiconductor layer 22 is smaller than the one-conductivity-type semiconductor layer 22. In addition to providing the reverse conductive type semiconductor layer 23 having a large area, the first electrode 2 is formed on the exposed portion of the one conductive type semiconductor layer 22.
4 and a light-emitting diode array in which the second electrode 25 is connected to the opposite conductive semiconductor layer 23 is proposed. In FIG. 10, reference numeral 26 denotes an insulating film made of a silicon nitride film or the like.

With this configuration, the first electrode 24 and the second electrode 25 can be provided on the same side of the semiconductor substrate 21, and the first electrode 24 and the second electrode 25 can be formed in one process. , The manufacturing process of the light emitting diode array is simplified, and the first electrode 24 and the second electrode 25 are located on the same side.
Connection work with an external circuit by a wire bonding method or the like is also facilitated.

The first electrode 24 (24a, 24b)
Is, as shown in FIG. 9, the adjacent one conductivity type semiconductor layer 22.
Each is divided into two groups to belong to a different group,
The second electrodes 25 belong to different groups, and are provided such that adjacent opposite conductivity type semiconductor layers 23 are connected to the same second electrode 25.

In this conventional light emitting diode array, exposed portions R are provided on both sides of the light emitting element row so as to alternately expose the opposite end portions of the adjacent one conductivity type semiconductor layers 22. And the second electrode 25 is also connected to the adjacent reverse conductivity type semiconductor layer 2.
Every third is connected to the opposite end side.

However, if the second electrode 25 is connected to the opposite end of each of the adjacent opposite conductivity type semiconductor layers 23 and provided, the mask pattern will be misaligned in the process of forming the second electrode 25. In this case, as shown in FIG. 11, there is a problem that the area of the light emitting portion of the adjacent light emitting element changes, and light emission variation occurs for each light emitting element. The influence of such misalignment of the mask pattern increases as the definition of the light emitting element increases. For example, the width X of the light emitting element
Is 22 μm and the length Y ₁ is 7 μm, and when the second electrode 25 is shifted by ₁ μm in the Y direction and Y ₁ becomes Y ₂ , the luminous intensity of the light emitting element on the side where the luminous area is reduced becomes 81.6.
%, 2 μm shift to 63.2%, 3 μm
If it shifts by m, it decreases to 46.6%. Note that the light emission intensity of the light emitting element on the side where the light emission area is not reduced remains at 100%, and the light emission variation increases substantially in proportion to the displacement of the second electrode 25.

The present invention has been made in view of such a problem of the conventional device, and an object of the present invention is to provide a light emitting diode array in which light emission variations of light emitting elements caused by misalignment of electrode patterns are eliminated. I do.

[0014]

In order to achieve the above object, in the light emitting diode array according to the first aspect of the present invention, a plurality of island-shaped one conductivity type semiconductor layers are provided on a substrate in a row. As an exposed part is formed on one end side of the layer,
On the one-conductivity-type semiconductor layer, a reverse-conductivity-type semiconductor layer is laminated and provided, and the same first electrode is connected and provided for each adjacent exposed portion of the one-conductivity-type semiconductor layer, and a different first electrode is provided. In a light-emitting diode array in which the same second electrode is connected to the opposite conductivity type semiconductor layer on the connected one conductivity type semiconductor layer, the exposed portions of the plurality of one conductivity type semiconductor layers are the same in the column. On the side.

In the above light emitting diode array, the first
Terminal portions for connecting the electrodes and the external circuit are separately provided on both sides of the row of the one conductivity type semiconductor layer, and the terminal portion located on the opposite side of the exposed portion of the one conductivity type semiconductor layer and the One electrode may be connected through the one conductivity type semiconductor layer.

In the light-emitting diode array, an exposed portion of the one-conductivity-type semiconductor layer located at the end of the substrate may be formed on the opposite side of the row.

Further, in the light emitting diode array according to the fourth aspect, a plurality of island-shaped one conductivity type semiconductor layers are provided in a row on the substrate, and the exposed portion is alternately provided on the opposite end side of the one conductivity type semiconductor layer. Is formed by stacking a reverse conductivity type semiconductor layer on the one conductivity type semiconductor layer, and connecting and providing the same first electrode for each adjacent exposed portion of the one conductivity type semiconductor layer. A light emitting diode array in which the same second electrode is connected to the opposite conductive type semiconductor layer on the one conductive type semiconductor layer to which different first electrodes are connected; A light-shielding film was provided at a position facing the second electrode.

[0018]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a view showing one embodiment of a light emitting diode array according to claim 1, and FIG. 2 is a sectional view taken along line AA in FIG. 1 and 2, 1 is a substrate, 2 is a semiconductor layer of one conductivity type, 3 is a semiconductor layer of opposite conductivity type, 4 (4a, 4b) is a first electrode, and 5 is a second electrode.

The substrate 1 is composed of, for example, a single crystal semiconductor substrate such as silicon (Si) or gallium arsenide (GaAs), or a single crystal insulating substrate such as sapphire (A1 ₂ O ₃ ). Even when a semiconductor substrate is used as the substrate 1, it is desirable to use a semiconductor substrate having as high a resistance as possible. In the case of a single crystal semiconductor substrate, a (100) plane or the like is used, and in the case of sapphire, a C plane or the like is used.

The one conductivity-type semiconductor layer 2 is made of a multilayer film of gallium arsenide or gallium arsenide and aluminum gallium arsenide, for example, silicon or selenium (Se) one conductivity type semiconductor impurity 1 × 10 ¹⁶ ~10 ¹⁹ atom, such as / Cm ³
Content. This one conductivity type semiconductor layer 2 is formed, for example, of MO
It is formed by a CVD method, an MBE method, or the like. That is, when the semiconductor substrate is used as the substrate 1 and formed by MOCVD, a natural oxide film of the semiconductor substrate is removed at a high temperature of 800 to 1000 ° C., and then an amorphous gallium arsenide film serving as a nucleus is formed at a low temperature of 450 ° C. or less. After growing to a thickness of about 0.1 to 2 μm, the temperature is raised to 500 to 700 ° C. and recrystallized to grow a gallium arsenide single crystal (two-step growth method).
In this case, trimethyl gallium ((CH ₃ ) ₃ Ga) or the like is used as a raw material of gallium, and arsine (AsH ₃ ) or the like is used as a raw material of arsenic. Next, 7
Post annealing such as repeating annealing at a high temperature of 50 to 1000 ° C. and rapid cooling to a low temperature of 600 ° C. or less several times (temperature cycle method) is performed. In the case of a two-layer structure of gallium arsenide and aluminum arsenide, an aluminum gallium arsenide layer is further formed. As a raw material of aluminum, trimethyl aluminum ((CH ₃ ) ₃ A1) or the like is used.

On the one conductivity type semiconductor layer 2, a reverse conductivity type semiconductor layer 3 is formed. The opposite conductivity type semiconductor layer 3 is also made of a compound semiconductor layer such as aluminum gallium arsenide (AlGaAs), and is doped with a reverse conductivity type semiconductor impurity such as zinc (Zn) or strontium (Sr) at 1 × 10 ¹⁸ to 10 ^{19 at.}
m / cm ³ . A semiconductor junction is formed at the interface between the one conductivity type semiconductor layer 2 and the opposite conductivity type semiconductor layer 3.
The one conductivity type semiconductor layer 2 and the opposite conductivity type semiconductor layer 3 are formed in an island shape. The opposite conductivity type semiconductor layer 3 may be formed of a plurality of layers having different compound crystal ratios.

After laminating the one conductivity type semiconductor layer 2 and the opposite conductivity type semiconductor layer 3 on the entire surface or a part of the substrate 1, the one conductivity type semiconductor layer 2 and the opposite conductivity type semiconductor layer 3 are formed into an island shape. Etching is performed, and then the opposite-conductivity-type semiconductor layer 3 is etched so that one end of the one-conductivity-type semiconductor layer 2 is exposed to form an exposed portion R in the one-conductivity-type semiconductor layer 2.

The island-shaped one-conductivity-type semiconductor layer 2 and the opposite-conductivity-type semiconductor layer 3 are covered with a protective film 6 made of, for example, a silicon nitride film. Extending above, eg, Al / Ni
/ Ge, Al / Cr / Ge, Au / Ge / Ni, Au /
First electrodes 4a and 4b made of Ge / Cr, Au / Cr, AuGe or the like are formed. One conductivity type semiconductor layer 2
Every other one is alternately connected to a different first electrode 4a, 4b. That is, the one-conductivity-type semiconductor layer 2 is divided into two groups, and each group is connected to a different first electrode 4a, 4b.

Also, the first conductive semiconductor layer 3 extends
A second electrode 5 is formed so as to extend on the semiconductor substrate 1 via a wall surface on the side opposite to the electrode 4. That is, the second electrode 5 is connected and provided for each adjacent light emitting diode belonging to a different group. The wide portion of the second electrode 5 becomes a terminal portion for wire bonding for connection to an external circuit. First electrode 4a, 4b and second electrode 5
By selecting a combination of the above, individual light emitting diodes can be selected to emit light. The second electrode 5 is also made of, for example, Al / Ni / Ge, Al / Cr /
Ge, Au / Ge / Ni, Au / Ge / Cr, Au / C
r, AuGe or the like.

In the light emitting diode array according to the first aspect, an exposed portion R is provided so that the same end of the one conductivity type semiconductor layer 2 is exposed, and the first electrode 4a, 4a
b, and a second electrode 5 is connected to the opposite end of the opposite conductivity type semiconductor layer 3.

As described above, the first exposed portion R on the same end portion is
When the electrodes 4 (4a, 4b) are connected and provided, and the second electrodes 5 are connected and provided on the same end side of the opposite conductivity type semiconductor layer 3, the electrode pattern is formed in the process of forming the second electrodes 5. Even if the position shift occurs, since the same position shift occurs in all the light emitting elements, the light emission variation does not occur among the light emitting elements. Note that the light emission intensity of the light emitting element can be easily adjusted by adjusting the current, and the intensity of the light emission intensity of the entire light emitting element on the same substrate can be easily adjusted.

In the above-described light emitting diode array, if the one conductivity type semiconductor layer 2 is n-type and the opposite conductivity type semiconductor layer 3 is p-type, the gap between the opposite conductivity type semiconductor 3 and the one conductivity type semiconductor layer 2 is determined. When a current flows in the forward direction, the first electrode 4
If the other first electrode 4b is connected with a opened, only the light emitting diode connected to the other electrode 4b emits light. Therefore, even if the common second electrode 5 is provided for each of the adjacent opposite conductivity type semiconductor layers 3, the first electrodes 4a and 4b are separately connected.
By changing the connection state between the electrodes 4a and 4b and the second electrode 5, it becomes possible to selectively cause adjacent light emitting diodes to emit light.

FIG. 3 is a view showing another embodiment of the light emitting diode array according to the first aspect. In FIG. 3, 1 is a substrate, 2 is a semiconductor layer of one conductivity type, 3 is a semiconductor layer of opposite conductivity type,
(4a, 4b) are first electrodes, and 5 is a second electrode.
In this light emitting diode array, terminal portions P for connecting the second electrode 5 and the external circuit are alternately provided on both sides of the light emitting element row, and the terminal portions P and the
Electrode 5 is connected between adjacent semiconductor layers 2 and 3. When the terminal portions P for connecting the second electrode 5 and the external circuit are provided on both sides of the light emitting element row in this manner, the interval between the adjacent terminal portions P becomes large, and a short circuit of a bonding wire or the like occurs. Less likely to occur. In this case, the wiring connecting the first electrode 4a to the one conductivity type semiconductor layer 2 is located at the end of the substrate 1, but if the light emitting elements need to be arranged at equal intervals over a plurality of substrates 1 Alternatively, the substrate 1 may be cut along the line BB in FIG. 3 to remove the first electrode 4b at the end. In this case, the island-shaped first electrode 4 (4c) may be separately connected to an external circuit.

FIG. 4 is a view showing a third embodiment of the light emitting diode array according to the first aspect. In FIG.
1 is a substrate, 2 is a semiconductor layer of one conductivity type, 3 is a semiconductor layer of the opposite conductivity type, 4 (4a, 4b) is a first electrode, and 5 is a second electrode. In the light-emitting diode array according to the third embodiment, only the one-conductivity-type semiconductor layer 2a at the end of the substrate 1 forms an exposed portion R on the opposite end of the light-emitting element row, and the opposite end is formed. The first electrode 4 a is connected to the exposed portion R on the side, and the second electrode 5 is connected to the opposite side of the opposite conductivity type semiconductor layer 3.

As described above, the one-conductivity-type semiconductor layer 2 at the end is
By forming the exposed portion R only on the opposite end side of the light emitting element row, only the wiring a can be formed without providing the wiring at the end of the substrate 1 in the lateral direction. That is, according to this embodiment, unlike the embodiment shown in FIG. 3, it is not necessary to remove the endmost wiring.

FIGS. 5 and 6 show one embodiment of the light emitting diode array according to the fourth aspect. 5 and 6, 2 is a semiconductor layer of one conductivity type, 3 is a semiconductor layer of the opposite conductivity type, 4 is a first electrode, and 5 is a second electrode.

In the light-emitting diode array according to the fourth aspect, a plurality of one-conductivity-type semiconductor layers 2 are provided in a row, and exposed portions R are formed alternately at one end of the one-conductivity-type semiconductor layer 2 facing one end. As described above, the opposite conductivity type semiconductor layer 3 is stacked on the one conductivity type semiconductor layer 2. In addition, the same first electrode 4 is connected to the exposed portion R adjacent to the one conductivity type semiconductor layer 2, and an opposite conductivity type semiconductor on the one conductivity type semiconductor layer 2 to which a different first electrode 4 is connected. It is configured so that the same second electrode 5 is connected to the layer 3.

A light-shielding film 7 is provided on the opposite conductivity type semiconductor layer 3 at a position facing the second electrode 5. The light-shielding film 7 is composed of the one conductivity type semiconductor layer 2 and the opposite conductivity type semiconductor layer 3.
Is provided so as to cover the opposite-conductivity-type semiconductor layer 3 by a few μm from the boundary with. That is, if the length of the light emitting portion is 10 μm, the light shielding film 7 is provided so as to cover the opposite conductivity type semiconductor layer 3 by 1 to 2 μm from the boundary between the one conductivity type semiconductor layer 2 and the opposite conductivity type semiconductor layer 3. Just do it. The light shielding film 7 is formed, for example, at the same time when the second electrode 5 is formed with the mask pattern 2 for forming the second electrode 5, and is made of the same metal material as the second electrode 5.

As described above, the second conductive type semiconductor layer 4
When a light-shielding film 7 made of the same material as the second electrode 5 is provided in a portion opposed to the electrode 5, the second electrode 5 and the light-shielding film 7 can be positioned even if a mask pattern is misaligned by several μm. Is always constant, so that the light extraction area of the light emitting diode is always constant. Therefore, light emission variation for each light emitting diode can be reduced as much as possible.

The light-shielding film 7 may be provided in a rectangular shape continuously with the second electrode 5 so that the light extraction portion is exposed. 3 may be formed so as to be extended.

[0036]

As described above, according to the light emitting diode array according to the first aspect, the exposed portions of the plurality of one conductivity type semiconductor layers are provided on the same side of the light emitting element row, and the first electrodes are connected. In addition, since the second electrode is connected and provided on the opposite end side of the opposite conductivity type semiconductor layer, even if the electrode pattern is displaced in the process of forming the electrode, light emission variation occurs in the light emitting element. Can be eliminated. Further, according to the light emitting diode array according to the present invention, even if a slight displacement occurs in the electrode pattern, there is no variation in light emission in the light emitting element. And the manufacturing becomes easy.

In the light-emitting diode array according to the fourth aspect, since the light-shielding film is provided on the opposite conductive type semiconductor layer at a position opposed to the second electrode, the light-emitting diode array has a mask pattern for forming the electrode. Even if displacement occurs, the light extraction area on the opposite conductivity type semiconductor layer is always constant, and light emission variation between adjacent light emitting diodes can be reduced as much as possible. Therefore, a light emitting diode array capable of performing high-quality printing can be obtained.

[Brief description of the drawings]

FIG. 1 is a plan view showing one embodiment of a light emitting diode array according to claim 1. FIG.

FIG. 2 is a sectional view showing one embodiment of a light emitting diode array according to claim 2;

FIG. 3 is a plan view showing another embodiment of the light emitting diode array according to claim 3;

FIG. 4 is a plan view showing a light emitting diode array according to a third embodiment of the present invention.

FIG. 5 is a plan view showing one embodiment of a light emitting diode array according to claim 4;

FIG. 6 is a sectional view showing one embodiment of a light emitting diode array according to claim 4;

FIG. 7 is a plan view showing a conventional light emitting diode array.

FIG. 8 is a sectional view taken along line AA in FIG. 7;

FIG. 9 is a plan view showing another conventional light emitting diode array.

FIG. 10 is a sectional view taken along line AA in FIG. 9;

FIG. 11 is a view showing a state in which electrodes are misaligned in a conventional light emitting diode array.

[Explanation of symbols]

1 ... substrate, 2 ... one conductivity type semiconductor layer, 3 ... reverse conductivity type semiconductor layer, 4 (4a, 4b) ... first electrode,
5: second electrode, R: exposed portion

Claims (4)

[Claims] A plurality of island-shaped one-conductivity-type semiconductor layers provided in a row on a substrate, and an exposed portion formed on one end side of the one-conductivity-type semiconductor layer; And a first conductive type semiconductor layer connected to a different first electrode and connected to the same first electrode for each adjacent exposed portion of the one conductive type semiconductor layer. In a light emitting diode array in which the same second electrode is connected to the opposite conductive semiconductor layer on a layer, exposed portions of the plurality of one conductive semiconductor layers are provided on the same side of the column. LED array. 2. A terminal portion for connecting the first electrode to an external circuit is separately provided on both sides of a row of the one-conductivity-type semiconductor layer, and a terminal portion opposite to an exposed portion of the one-conductivity-type semiconductor layer. 2. The light emitting diode array according to claim 1, wherein the terminal portion located at the first position and the first electrode are connected via the one conductivity type semiconductor layer. 3. 3. The light-emitting diode array according to claim 1, wherein an exposed portion of the one-conductivity-type semiconductor layer located at an end of the substrate is formed on an opposite side of the column. 4. A plurality of island-shaped one conductivity type semiconductor layers are provided in a row on a substrate, and the one conductivity type semiconductor layer is formed such that exposed portions are alternately formed on opposing end portions of the one conductivity type semiconductor layer. The opposite conductivity type semiconductor layer is provided by lamination on the type semiconductor layer, and the same first electrode is connected and provided for each adjacent exposed portion of the one conductivity type semiconductor layer, and different first electrodes are connected. In a light emitting diode array in which the same second electrode is connected to the opposite conductivity type semiconductor layer on one conductivity type semiconductor layer, a portion of the light emitting diode array opposite to the second electrode on the opposite conductivity type semiconductor layer is shielded from light. A light-emitting diode array comprising a film.