JPH1167718A - Cooling/heating apparatus for semiconductor processing solution - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cooling/heating apparatus which attains a cooling/heating chamber having high sealing ability, realize high heat transfer and lightweight and can easily increase its cooling/heating performance, even if the apparatus is subjected to repeated temperature cycles by cooling and heating and to plastic deformation over aging. SOLUTION: Sidewalls 1 of fluorine plastic are integrally formed, with each side wall bored cylindrically and heat exchange plates 2a, 2b, 12a and 12b are disposed opposite to one other with respect to the cylindrical bores, defining two cylindrical cooling/heating chambers 10 and 11. Each of the chambers 10 and 11 has a plurality of small cooling/heating chambers defined by one or more partition plates, flow holes communicating with the adjacent small chambers are made in the partition plates or the sidewalls 1, so that flow paths arranged in series and passing through all the small chambers are formed as being extended zigzag from a flow inlet hole to a flow outlet hole. Thereby cooling/heating performance can be increased higher in comparison with that when cooling/heating is carried out with only the single cooling/heating chamber 10. Disc springs 6 can change the pushing force and allowable expansion/contraction degree by suitably selecting the number of such springs and their mounting directions for ensuring the sealing ability of seals 9a, 9b, 19a and 19b.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing liquid cooling / heating apparatus for cooling or heating a semiconductor processing liquid such as a corrosive chemical liquid to control the temperature of the semiconductor processing liquid. The present invention relates to a semiconductor processing liquid cooling / heating apparatus that performs the processing efficiently.

[0002]

2. Description of the Related Art Conventionally, a semiconductor processing liquid cooling / heating apparatus has brought a semiconductor processing liquid into contact with a heat exchange substrate and cooled or heated the semiconductor processing liquid via the heat exchange substrate.
That is, a cooling and heating chamber is formed by a side wall body made of a fluororesin having corrosion resistance and a heat exchange substrate disposed to face through the side wall body, and the semiconductor processing liquid flowing into the cooling and heating chamber is subjected to heat exchange. The semiconductor processing liquid is cooled or heated by contacting the substrate.

As this heat exchange substrate, for example, there is a substrate formed of a graphite base material whose semiconductor processing liquid side is coated with an amorphous carbon layer (Japanese Patent Application No. 8-32059).
issue). In other words, this heat exchange substrate uses a graphite substrate that is easy to process, and is subjected to a heat treatment on the surface of the graphite substrate, thereby forming an amorphous carbon layer. Good mirror surface, high reliability not to allow chemicals and vapors to pass through, easy sealing with O-rings, extremely high chemical resistance, and no particle generation There is. Also,
Since the heat exchange substrate is not metal, high-purity treatment can be performed by wet cleaning with chemicals or the like, or gas phase cleaning method, and extremely high-level impurity removal can be performed before configuring the apparatus. The effect on the semiconductor processing liquid at the time is reduced.

[0004]

Amorphous carbon used as a heat exchange substrate by a conventional semiconductor processing solution cooling / heating apparatus is hard but brittle, also called glassy carbon, and reinforces the heat exchange substrate. It is necessary to further stack a reinforcing plate on the heat exchange substrate, and conventionally, a metal material such as aluminum or an aluminum alloy having high thermal conductivity has been used as the reinforcing plate.

However, the coefficient of thermal expansion of amorphous carbon as a heat exchange substrate is significantly different from the coefficient of thermal expansion of a metal material such as aluminum or an aluminum alloy. It may not be possible, and cracking or peeling may occur due to temperature changes during cooling and heating. For this reason, a grease with good thermal conductivity is interposed between the heat exchange substrate and the reinforcing plate to avoid sticking, but since the thermal resistance is not small, a decrease in heat transfer performance due to this is inevitable. . In addition, amorphous carbon or graphite base material has the disadvantage that its thermal conductivity is lower than that of metal materials such as aluminum or aluminum alloy.To minimize the loss of heat transfer performance, use a heat exchange substrate. Although it is desirable to make it as thin as possible, there is a problem that the mechanical strength becomes weak. For this reason, a reinforcing plate is needed to compensate for the mechanical weakness of the heat exchange board.However, the conventional reinforcing plate is made of wrought aluminum and can secure light weight and high thermal conductivity. There was a problem in that it was insufficient for reinforcement.

That is, when the longitudinal elastic modulus of the material of the reinforcing plate is low, the rigidity of the reinforcing plate is low, and when the torque of the tightening screw provided on the outer periphery of the seal ring is increased, the inner plate surface of the seal ring becomes outer. In addition, there is a problem that the heat-exchange board to be reinforced may be damaged in a convex shape toward the end, and the heat exchange substrate to be reinforced may be damaged.

Further, when the thermo module as the cooling / heating body is mounted on the outside of the reinforcing plate, the reinforcing plate is curved, so that the contact pressure between the thermo module and the reinforcing plate becomes uneven, and the mechanical strength of the thermo module is reduced. There is also a problem in that damage and an increase in thermal contact resistance are caused, and as a result, performance and reliability of the entire device are reduced.

On the other hand, elastomers generally used as sealing materials may elute component substances and contaminate the semiconductor processing solution. Therefore, it is desirable to avoid using elastomers as sealing materials and to use fluororesin as sealing materials. However, the fluororesin itself does not have elasticity like an elastomer, and easily undergoes plastic deformation. For this reason, a composite sealing material having a U-shaped cross-section and an elastomer for the portion surrounded by the U-shape is used in order to make the contact portion with the semiconductor processing liquid a fluororesin.

However, the fluororesin forming the seal ring and the fluororesin forming the side wall body undergo a plastic deformation called cold flow due to a cooling or heating temperature cycle or long-term use, and the plastic deformation is caused by this plastic deformation. Due to the reduction in dimensions, the contact surface pressure at the seal portion decreases with time, resulting in a problem that the sealability deteriorates.

Further, in the conventional semiconductor processing liquid cooling / heating apparatus, although there is a demand for improvement of the cooling / heating performance, the cooling / heating is performed via the heat exchange substrate corresponding to one cooling / heating chamber. There is also a problem that the cooling and heating performance is limited due to the performance.

Therefore, the present invention eliminates such a problem, and maintains a high sealing property of the cooling and heating chamber even if plastic deformation occurs due to repetition of a temperature cycle accompanying cooling and heating or a change with time, thereby achieving high heat transfer. It is an object of the present invention to provide a cooling and heating apparatus for a semiconductor processing liquid, which can achieve performance and weight reduction and can easily double cooling and heating performance.

[0012]

According to a first aspect of the present invention, there is provided a cooling and heating chamber comprising a side wall made of fluororesin and first and second heat exchange substrates disposed to face each other via the side wall. To form
The cooling and heating chamber is hermetically sealed via a seal ring, and first and second reinforcing plates for reinforcing the first and second heat exchange substrates are provided outside the first and second heat exchange substrates. And sealing the cooling and heating chamber with a plurality of tightening screws penetrating the first reinforcing plate, the first heat exchange substrate, the side wall, the second heat exchange substrate, and the second reinforcing plate. The semiconductor processing liquid that has flowed into the cooling and heating chamber through the inlet hole is brought into contact with the heat exchange substrate to perform cooling or heating, and the cooled or heated semiconductor processing liquid flows out through the outlet hole. In the cooling and heating device for a semiconductor processing liquid, at least the side wall of the side wall, the first and second heat exchange substrates, and the first and second reinforcing plates is formed by integral formation. Forming a plurality of cooling chambers, For each heating chamber, a sealing configuration including the tightening screw and the sealing member is provided, and each cooling and heating chamber forms a plurality of cooling and heating chambers with one or more partition plates, and each of the cooling and heating chambers is The semiconductor processing liquid is serially connected between the inlet hole and the outlet hole by a predetermined flow hole provided in the side wall and the partition plate.

According to a second aspect of the present invention, in the first aspect, the first and second heat exchange substrates are made of a graphite base material having at least a treatment liquid contacting surface contacting a semiconductor treatment liquid coated with an amorphous carbon layer. There is a feature.

A third invention is characterized in that, in the first invention, the first and second heat exchange substrates are made of an amorphous carbon material.

According to a fourth aspect, in the second or third aspect, the first and second reinforcing plates are formed and sintered by a powder forging method using a rapidly solidified aluminum alloy powder as a raw material. It is characterized by being.

According to a fifth aspect of the present invention, in the first to fourth aspects, the seal ring has a liquid contact surface formed of a fluorine resin, and a plurality of disc springs are used in combination with each other for each tightening screw. At least one or more of adjacent disk springs of the plurality of disk springs are overlapped in the opposite direction.

[0017]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view of a semiconductor processing liquid cooling and heating apparatus according to an embodiment of the present invention, FIG. 2 is a front view thereof, and FIG. 3 is a right side view thereof.

The semiconductor processing liquid cooling and heating apparatus shown in FIGS. 1 to 3 has two cooling and heating chambers 10 and 11 whose central portions are hollowed out in a cylindrical shape, and a side wall made of fluororesin. 1. The cooling and heating chambers 10, 1 formed by the side wall bodies 1.
1, heat exchange substrates 2a, 2b, 12 made of a graphite base material, at least surfaces of which contact with both end surfaces are coated with amorphous carbon.
a, 12b, made of an aluminum alloy material formed and sintered by a powder forging method using a rapidly solidified aluminum alloy powder as a raw material, and superimposed on the outside of the heat exchange substrates 2a, 2b, 12a, 12b to overlap the heat exchange substrates 2a, 2b. It has reinforcing plates 3a, 3b, 13a, 13b for reinforcing 2b, 12a, 12b.

The pipe 8 allows the semiconductor processing liquid from the processing vessel (not shown) to flow into the cooling and heating chamber 10, and the pipe 7 causes the semiconductor processing liquid from the cooling and heating chamber 10 to flow into the processing vessel (not shown). In addition, as described later, the cooling and heating chamber 10,
11 forms a plurality of cooling and heating chambers by one or more partition plates, and the cooling and heating chamber 10 makes the semiconductor processing liquid meander between the cooling and heating chamber 11 and the cooling and heating chamber 11 in series and through a plurality of flow holes. And distribute them.

The side wall 1 and the heat exchange board 2 are formed around the cooling and heating chambers 10 and 11 formed by the integrally formed side wall 1.
Four annular seal portions 9a, 9b, 19a, and 19b are formed between a and b, respectively.

Further, the sealing portions 9a, 9b, 19a, 1
9b, the reinforcing plates 3a and 13a, the heat exchange boards 2a and 12a, the side walls 1, and the heat exchange boards 2b and 12
b, 24 screws 4 sequentially penetrating the reinforcing plates 3b, 13b
Having. Each screw 4 has a tip portion, that is, a reinforcing plate 3.
The nut 5 is attached to the b, 13b side, the thickness between the head of the screw and the nut 5 can be adjusted arbitrarily, and a plurality of disc springs are provided between the head of the screw 4 and the reinforcing plates 3a, 13a. 6
And the pressing force of the disc spring 6 and the reinforcing plate 3
a, 13a, heat exchange boards 2a, 12a, side wall 1, heat exchange boards 2b, 12b, and reinforcing plates 3b, 13b.
Ensure the seal of 9b, 19a, 19b.

The reinforcing plates 3a, 3b, 13a, 13b
, Four thermo modules (not shown) are attached to the outside, and reinforcing plates 3a, 3b, 13a, 13b
Heat is supplied or absorbed to the cooling and heating chambers 10 and 11 via the heat exchange boards 2a, 2b, 12a and 12b, and the plurality of holes s1 and s2 are used for mounting the thermo module. Further, a heat radiating block (not shown) is attached to the outside of the thermo module, and cooling water is supplied to the heat radiating block to efficiently radiate heat from the thermo module.

Next, the detailed configuration of the side wall 1 will be described with reference to a plan view of the side wall 1 shown in FIG. 4 and a cross-sectional view taken along line AA of the side wall 1 shown in FIG. I do.

The cooling and heating chambers 10 and 11 are further divided into four cooling and heating chambers 30a to 30d and 30e to 30e by three partition plates 21 to 23 and 31 to 33, respectively.
30h, divided into a total of eight cooling and heating chambers 30a-
30h are formed. Between one end surface of the side wall 1 and the cooling and heating chamber 10, an inflow hole 24 and an outflow hole 25 which are hollowed out in a cylindrical shape are formed, and the inflow hole 24 extends from the pipe 8 to the small room 30a. The semiconductor processing liquid is allowed to flow in, and the outflow holes 25 are formed.
Allows the semiconductor processing solution to flow from the cooling / heating small room 30d to the pipe 7. The partition plate 22 is provided on one end face side of the side wall 1 with the same flow hole 22 as the inflow hole 24 and the outflow hole 25.
a, and the partition plates 31, 33 have flow holes 31a, 33a substantially identical to the inflow hole 24 and the outflow hole 25 on the surface side facing one end surface of the side wall 1. Furthermore, between the cooling and heating small rooms 30a and 30e, and between the cooling and heating small rooms 30b and 30e.
f, between the cooling and heating compartments 30c and 30g, and between the cooling and heating compartments 30d and 30h, the flow holes 26 to 29, which are almost the same as the inflow hole 24 and the outflow hole 25, respectively, are formed, The semiconductor processing liquid is communicated so that it can be circulated.

As a result, as shown in FIG. 6, the semiconductor processing liquid flowing from the pipe 8 first flows into the cooling and heating small room 30a through the inflow hole 24, and flows through the flow hole 26 → the cooling and heating small room 30e → the flow. Hole 31a → cooling and heating small room 30f → circulation hole 27 → cooling and heating small room 30b → circulation hole 22a → cooling and heating small room 30c → circulation hole 28 → cooling and heating small room 30g →
It flows in the order of the flow hole 33a → the cooling / heating small room 30h → the flow hole 29 → the cooling / heating small room 30d, and finally flows out of the pipe 7 through the outflow hole 25.

Thus, the cooling and heating small chambers 30a to 30a
30h forms a serial and meandering flow path by the flow holes 22a, 31a, 33a, 26 to 29 arranged between the inflow hole 24 and the outflow hole 25, and the semiconductor processing liquid is
According to this flow path, all the cooling / heating small rooms 30a-3
It flows while meandering 0h in series.

Thus, the cooling and heating small rooms 30a to 30a
The semiconductor processing liquid flowing into the heat exchange substrates 2 a, 2 b, and 12 arranged in contact with the upper and lower end surfaces of the cooling and heating chambers 10 and 11, respectively.
a, 12b, so that the semiconductor processing liquid is efficiently cooled or heated.

Here, the conventional semiconductor processing liquid cooling and heating apparatus cools and heats the semiconductor processing liquid only in one cooling and heating chamber 10, but in the embodiment of the present invention, the two cooling and heating chambers 10, Since it has 11, it has about twice the cooling and heating performance. Note that the cooling and heating of the semiconductor processing liquid is performed by the contact heat transfer with the heat exchange substrate as described above, and the heat transfer performance is also significantly affected by the flow rate of the semiconductor processing liquid. That is, when the flow rate of the semiconductor processing liquid is reduced, the heat transfer performance is reduced. Therefore, it is necessary to avoid a design in which the restricted flow rate is reduced. For example, if a plurality of cooling and heating chambers are formed in parallel to form a flow path, a semiconductor processing liquid having a flow rate divided by the parallel flow path flows into each cooling and heating chamber. Even if two cooling and heating chambers are provided, a decrease in heat transfer performance due to a decrease in flow velocity cannot be avoided. For this reason, in the embodiment of the present invention, the adjacent cooling and heating small chambers 30a to 30h are communicated with the communication holes 26 to 29 provided in the side wall body 1 to form a serial flow path. Flow rate of each cooling and heating chamber is 1
The flow velocity is the same as that in the case of two cooling / heating chambers, and the overall cooling / heating performance is doubled. It can be easily understood that, by further connecting the cooling and heating chambers in series, such as three or four, the cooling and heating performance is increased corresponding to the increased number of the cooling and heating chambers.

The through holes 26, 2 in the side wall 1
9 is formed by drilling at the same time when the inflow hole 24 and the outflow hole 25 are formed, and the through holes 27 and 28 are also formed by drilling. However, with the formation of the through holes 27 and 28, unnecessary holes 35 and 36 are formed. Therefore, the holes 35 and 36 prevent the semiconductor processing liquid from flowing out by the black plugs 37 and 38. In this case, instead of simply closing the holes 35 and 36 with the plugs 37 and 38, the plugs 37 and 38 can be used as a temperature sensor mounting port in the cooling and heating chamber 10. However, depending on the method of forming the side wall 1, the holes 35 and 36 do not need to be formed.

Next, the sealing portion 9 is provided in the cooling and heating chambers 10 and 1.
1 has a circular shape slightly larger than the circular end face, and is disposed on the side wall 1 on the contact surface side of the heat exchange boards 2a, 2b, 12a, 12b. Four annular grooves are formed in the side wall body 1 so that the annular seal portions 9a, 9b 19a, and 19b are mounted in advance.

FIG. 5B is an enlarged cross-sectional view of the seal portion 9b. The seal portion 9b has a U-shaped fluororesin 41 and a U-shaped cross-section. And the elastomer 40 are composited. The U-shaped fluororesin 41 has two concentric projections 42 on the heat exchange substrate 2b side and on the lower surface side of the groove formed in the side wall 1, respectively, thereby ensuring the seal. ing.
The U-shaped fluororesin portion connecting these projections 42 is directed toward the center of the cooling and heating chamber 10, and the semiconductor processing solution contacts the seal ring only with the fluororesin, and the elastomer and Will not contact.
Therefore, the component material of the elastomer 40 does not elute into the semiconductor processing liquid in the cooling and heating chamber 10 and there is no contamination due to this.

Here, the side wall 1 has the screw 4
Screw 4 and nut 5
The thickness of the seal portions 9a, 9b, 19a, and 19b is reliably sealed by adjusting the thickness between the two and the pressing of the disc spring 6.

That is, the seal portions 9a, 9b, 19a, 19 are formed by a temperature cycle by cooling or heating by a thermo module (not shown) or by use for a long period of time.
The fluororesin constituting the b and the fluororesin constituting the side wall 1 cause a so-called cold flow, a reduction in dimension in the pressing direction, and the sealing portions 9a, 9b, 19a, 19b.
The contact surface pressure is reduced, but the expansion and contraction and pressing of the disc spring 6 absorb the reduction in dimension, and as a result, the sealing portion 9
a, 9b, 19a, and 19b are prevented from deteriorating the sealing performance.

The pressing of the disc springs 6 can be easily adjusted by appropriately selecting the number of disc springs 6 or the manner of stacking them. For example, it is possible to increase the pressing force of the entire disc spring 6 by arranging the same number of directions of the disc springs 6. In this case, the disc springs 6 may be arranged in many opposite directions. FIGS. 7A and 7B show examples of the arrangement of the disc springs when eight disc springs are used, and FIG.
In FIG. 7B, only one disc spring is arranged in the opposite direction.
Has three disc springs arranged in opposite directions. 1 disc spring
A larger pressing force can be obtained when only the portions are arranged in the opposite direction than when the disc springs are arranged in three opposite directions. In addition, when the disc springs are arranged in three opposite directions, the expansion and contraction allowance can be larger than when only one disc spring is arranged in the opposite direction.

The ability to arbitrarily adjust the pressing force and the allowable expansion and contraction in this way means that, besides ensuring the stability of sealing, there is a problem in mechanical strength due to restrictions on plate thickness dimensions and problems with the material. When using a graphite base material covered with an amorphous carbon layer or a heat exchange substrate 2a, 2b, 12a, 12b using an amorphous carbon material, it is safe to design according to the design so as not to impair the mechanical strength. In addition, it is possible to attach and press-fit a stable heat exchange board or reinforcing plate.

On the other hand, the reinforcing plates 3a and 3b are aluminum alloy materials formed and sintered by a powder forging method using a rapidly solidified aluminum alloy powder as a raw material. The low longitudinal elastic modulus, which is a disadvantage, can be significantly increased by 30 to 60% without losing the advantages of lightweight and high thermal conductivity, which are advantages of wrought materials and cast materials. Thus, the reinforcing plates 3a and 3b have a sufficient longitudinal elastic modulus without increasing the plate thickness, and the heat exchange substrates 2a and 2b even when the pressing force of the screw provided on the outer periphery of the seal ring is increased. ,
12a and 12b are not damaged. Also, the reinforcing plate 3
Since it is not necessary to increase the thickness of the a, 3b, 13a, 13b, the heat capacity of the reinforcing plates 3a, 3b, 13a, 13b can be minimized, and the response speed of heating and cooling is not impaired.
A reduction in size and weight can be realized.

The above-mentioned heat exchange boards 2a, 2b, 1
In forming 2a and 12b, a high-purity graphite substrate having an alkali metal / heavy metal content of 5 ppm or less is processed into a desired shape, and then the surface is reacted with hydrogen fluoride gas to remove impurities such as metal elements (contaminants). ) Is vaporized as fluoride to obtain high purity, and after applying a resin or the like,
It is placed in a reactor heated to a desired temperature, and the carbon in the resin is made amorphous by heat treatment to form an amorphous carbon layer. If the heat treatment is performed in the state where the resin film is formed in this way, the resin is impregnated into the unevenness of the surface of the substrate and the substrate is made amorphous in a smooth state, so that a smoother surface state can be obtained.

The heat exchange substrate 2 thus formed
In the apparatus using the a, 2b, 12a, and 12b, it is favorable for a long period of time without contacting the heat exchange substrates 2a, 2b, 12a, and 12b to mix impurities into the liquid and without generating particles. In addition, it is possible to control the temperature of the semiconductor processing liquid. In this apparatus, hydrofluoric acid, nitric acid, phosphoric acid, sulfuric acid, which is frequently used as a semiconductor processing liquid,
It exhibits sufficient resistance to many acids such as hydrochloric acid.

The heat exchange boards 2a, 2b, 12a, 12
In the case of b, since the surface is in a state close to a mirror surface, a seal with extremely good airtightness can be formed, and no liquid leakage occurs.

Further, it is desirable that the graphite used as the base material be as dense as possible with as few pores as possible.
In particular, when a material whose surface is densified is used, the workability is good and the mirror finish is easy, and the amorphous carbon layer has a thickness of about 5 to 10 μm and is formed by a surface reaction. The mirror surface can be maintained satisfactorily, and there is no fear of peeling due to a temperature change or the like.

In the above-mentioned heat exchange substrate, a resin was applied to the surface of the graphite substrate, and a treatment was performed by heat treatment to form an amorphous carbon layer. Alternatively, an amorphous carbon layer may be formed on the surface of the graphite substrate by vapor phase growth.

Further, instead of forming the amorphous carbon layer on the surface of the graphite substrate, the base material may be formed of amorphous carbon. For example, the heat exchange substrates 2a, 2b, 12a, 12b may be made of amorphous carbon having a thickness of 1 mm to 3 mm.

The thickness of the screw 4 between the head of the screw 4 and the nut 5 can be arbitrarily adjusted by rotating the screw 4, but the nut 5 itself is fixed to the reinforcing plate 3b. Alternatively, the thickness may be fixed from the beginning by a rod and a fixing pin or the like in consideration of a mounting space of the disc spring 6. In short, it is only necessary that the pressing force of the disc spring 6 is appropriately applied and that the expansion and contraction of the disc spring 6 is appropriate.

Further, the above-mentioned three partition plates are provided in each cooling and heating chamber, and each cooling and heating chamber is divided into four cooling and heating small rooms. However, the present invention is not limited to this, and more partition plates are provided and further divided. A large number of cooling / heating small rooms may be formed, and conversely, a small number of cooling / heating small rooms may be formed as a small number of partition plates. However, it is necessary to form a flow hole for communicating between the cooling and heating small rooms corresponding to each of the formed cooling and heating small rooms.

Further, it is necessary to meander as much as possible when forming the partitioning plate or the cooling and heating small room formed by the partition plate. However, the shape of each cooling and heating small room and the flow path formed thereby are arbitrarily set. can do. However, the semiconductor processing liquid flowing between the cooling small rooms must flow in series.

In the above-described embodiment, only the side wall 1 is integrally formed, the heat exchange boards 2a and 2b and the reinforcing plates 3a and 3b are provided in the cooling and heating chamber 10, and the heat exchange boards 12a and 12a are provided.
Although 12b and the reinforcing plates 13a and 13b correspond to the cooling and heating chamber 11, respectively, the present invention is not limited to this, and the heat exchange substrates 2a and 12a and the heat exchange substrates 2b and 12b may also be integrally formed. The reinforcing plates 3a and 13a and the reinforcing plates 3b and 13b may also be integrally formed. Here, the heat exchange boards 2a and 12a and the heat exchange boards 2b and 12a
In the case where b, the reinforcing plates 3a and 13a and the reinforcing plates 3b and 13b are not integrally formed, components common to the heat exchange substrate and the reinforcing plate used for the configuration of the single cooling and heating chamber can be shared.

[0048]

As described in detail above, in the first aspect, at least the side wall of the side wall, the first and second heat exchange boards, and the first and second reinforcing plates is provided. The body forms a plurality of cooling and heating chambers by integral formation, a sealing configuration including a fastening screw and a seal ring is provided for each of the plurality of cooling and heating chambers, and each of the cooling and heating chambers is formed by a plurality of cooling plates by one or more partition plates. While forming the heating small room, each cooling heating small room is provided between the side wall body and the predetermined flow hole provided in the partition plate until the semiconductor processing liquid reaches the outlet hole from the inlet hole. Are connected in series, so that there is an advantage that the cooling and heating performance can be increased while maintaining a small size and light weight with a simple configuration.

According to a second or third aspect of the present invention, in the first aspect, the first and second heat exchange substrates are each made of a graphite base having an amorphous carbon layer coated on at least a treatment liquid contact surface that contacts a semiconductor treatment liquid. Since it is a material, or it is an amorphous carbon material, it has good workability and extremely good production, and it is easy to polish, so it is possible to easily obtain a smooth flat surface, and Since it can be obtained, there is no gas passage and the chemical resistance is extremely high, so that there is an advantage that highly airtight sealing can be realized.

In a fourth aspect based on the second or third aspect, the first and second reinforcing plates are made of an aluminum alloy material formed and sintered by a powder forging method using a rapidly solidified aluminum alloy powder as a raw material. Because of this, the strength of lightweight and high thermal conductivity, which are the advantages of commonly used aluminum wrought and cast materials, is not lost, and the low longitudinal elastic modulus, which is a disadvantage, can be greatly increased by 30 to 60%. As a result, the rigidity of the reinforcing plate can be increased without increasing the plate thickness, so that the heat capacity of the reinforcing plate can be minimized, without impairing the response speed of cooling and heating,
There is an advantage that the entire device can be reduced in size and weight.

Further, since the aluminum alloy material has high rigidity, the inner plate surface of the seal ring does not bend outwardly by the tightening of the tightening screw on the outer periphery of the seal ring. This has the advantage of reducing the risk of breakage and maintaining the sealing performance without reducing the contact surface pressure at the seal portion.

Further, the non-curvature of the reinforcing plate flattens the contact pressure with the thermo module attached to the outside of the reinforcing plate, and causes the mechanical damage and the increase in thermal contact resistance due to the uneven contact pressure. This has the advantage that a decrease in overall performance and reliability can be prevented.

According to a fifth aspect, in the first to fourth aspects, the seal ring has a liquid contact surface formed of a fluorine resin, and a plurality of disc springs are used in combination with each other for each tightening screw. Since at least one or more of the adjacent disc springs among the plurality of disc springs are overlapped in the opposite direction, the fluorocarbon resin forming the seal ring and the fluorocarbon resin forming the side wall may be subjected to a temperature cycle or a long cycle. Even if cold flow occurs due to the use of the period and the dimension decreases in the tightening direction due to this, the contraction of the coned disc spring absorbs the dimension decrease and prevents the pressure drop of the contact surface in the seal part to ensure a stable seal. It has the advantage that it can be provided.

The pressing force of the disc spring can be adjusted by appropriately selecting the number and arrangement direction of the disc springs. Therefore, the graphite base material or the amorphous carbon material coated with the amorphous carbon layer having low mechanical strength can be used. There is an advantage that even if a heat-exchange substrate using the same is used, safe and stable mounting and pressure welding can be performed according to the design so that the mechanical strength is not impaired.

[Brief description of the drawings]

FIG. 1 is a plan view of a semiconductor processing liquid cooling and heating apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram showing a front view of a semiconductor processing liquid cooling and heating apparatus according to an embodiment of the present invention.

FIG. 3 is a right side view of a semiconductor processing liquid cooling and heating apparatus according to an embodiment of the present invention.

FIG. 4 is a plan view of a side wall body.

FIG. 5 is a sectional view of the side wall taken along line AA.

FIG. 6 is a perspective view of a side wall and a view showing a flow of a semiconductor processing liquid.

FIG. 7 is an enlarged sectional view of a seal portion.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Side wall 2a, 2b, 12a, 12b ... Heat exchange board 3a, 3b, 13a, 13b ... Reinforcement plate 4 ... Screw 5 ...
Nut 6 ... Bellet spring 7,8 ... Pipe 9a, 9b, 19a, 19b ... Seal part 10, 11 ... Cooling and heating chamber 21-23, 31-33 ... Partition plate 22a, 26-29, 31a, 33a ... Flow hole 30a ~ 30h ... Cooling and heating room 24 ... Inlet 25
… Outflow hole 39… Through hole

Claims (5)

[Claims] 1. A cooling and heating chamber is formed by a side wall made of a fluororesin and first and second heat exchange substrates disposed to face each other with the side wall being interposed therebetween. The first and second reinforcing plates are hermetically sealed via a seal ring and reinforce the first and second heat exchange boards.
The first reinforcing plate,
A plurality of tightening screws penetrating the first heat exchange board, the side wall, the second heat exchange board, and the second reinforcing plate ensure the sealing of the cooling and heating chamber, and the cooling and heating are performed through an inlet hole. The semiconductor processing liquid flowing into the chamber is brought into contact with the heat exchange substrate to perform cooling or heating, and the cooled or heated semiconductor processing liquid is discharged through an outlet hole. At least the side wall member among the wall member, the first and second heat exchange substrates, and the first and second reinforcing plates forms a plurality of cooling and heating chambers by integral formation, For each cooling and heating chamber, a sealing configuration including the tightening screw and the seal ring is provided.Each cooling and heating chamber forms a plurality of cooling and heating chambers with one or more partition plates, and each of the cooling and heating chambers includes: The semiconductor processing liquid, wherein the semiconductor processing liquid is serially connected between the inlet hole and the outlet hole by a predetermined flow hole provided in the side wall and the partition plate. For cooling and heating equipment. 2. The method according to claim 1, wherein the first and second heat exchange substrates are graphite base materials having at least a processing liquid contact surface that comes into contact with a semiconductor processing liquid covered with an amorphous carbon layer. Cooling and heating equipment for semiconductor processing liquids. 3. The cooling device according to claim 1, wherein the first and second heat exchange substrates are made of an amorphous carbon material. 4. The aluminum plate according to claim 2, wherein said first and second reinforcing plates are formed and sintered by a powder forging method using rapidly solidified aluminum alloy powder as a raw material.
Or a cooling and heating device for a semiconductor processing liquid according to 3. 5. The seal ring has a liquid contact surface formed of a fluororesin, and a plurality of disc springs are used in combination with each other for each of the tightening screws, and an adjacent disc among the plurality of disc springs is used. The cooling and heating device for a semiconductor processing liquid according to any one of claims 1 to 4, wherein at least one or more of the springs are overlapped in a reverse direction.