KR20240006671A - High-temperature susceptor with rapid heat dissipation ability - Google Patents

Abstract

The substrate support assembly includes a cooling plate defining one or more channels configured to receive a heat transfer fluid. The substrate support assembly further includes a gas distribution plate disposed on the cooling plate. The gas distribution plate defines an internal volume configured to receive gas. The substrate support assembly further includes a heating plate disposed on the gas distribution plate. The heating plate includes a resistive heater. The substrate support assembly further includes an electrostatic chuck disposed on the heating plate. An electrostatic chuck is configured to support a substrate in a processing chamber.

Description

High-temperature susceptor with rapid heat dissipation ability

[0001] Embodiments of the present disclosure relate to susceptors, such as those used in connection with substrate processing systems, particularly susceptors used in high temperature applications.

[0002] In substrate processing and other electronic device processing, processing chambers are used to perform substrate processing operations. The temperatures of substrates in processing chambers must be controlled to prevent defects.

[0003] The following is a simplified summary of the disclosure to provide a basic understanding of some aspects of the disclosure. This summary is not an extensive overview of the disclosure. This summary is not intended to identify key or critical elements of the disclosure or to delineate any scope of specific implementations of the disclosure or any scope of the claims. The sole purpose of this summary is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description that is presented later.

[0004] In an aspect of the disclosure, a substrate support assembly includes a cooling plate defining one or more channels configured to receive a heat transfer fluid. The substrate support assembly further includes a gas distribution plate disposed on the cooling plate. The gas distribution plate defines an internal volume configured to receive gas. The substrate support assembly further includes a heating plate disposed on the gas distribution plate. The heating plate includes a resistive heater. The substrate support assembly further includes an electrostatic chuck disposed on the heating plate. An electrostatic chuck is configured to support a substrate in a processing chamber.

[0005] In another aspect of the disclosure, a system includes a substrate support assembly disposed in a processing chamber. The substrate support assembly includes a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate. The system further includes a controller. The controller causes heat transfer fluid to flow through one or more channels formed by the cooling plate. The controller further may be configured to direct the gas through the gas distribution plate, into the openings formed by the heating plate, and from the openings in the heating plate to a location between the upper surface of the substrate support assembly and the substrate disposed on the substrate support assembly. ) to flow. The controller further causes a resistive heater disposed on the heating plate to heat the heating plate.

[0006] In another aspect of the disclosure, a method includes flowing a heat transfer fluid through one or more channels formed by a cooling plate of a substrate support assembly. This method allows the gas to flow through a gas distribution plate of a substrate support assembly disposed on a cooling plate, through openings formed in a heating plate of a substrate support assembly disposed on a cooling plate, and through the upper surface of the substrate support assembly and the substrate in the processing chamber. and flowing to a location between the substrates disposed on the support assembly. In response to the processing chamber being in an idle state, the method further includes causing a resistive heater disposed at the heating plate to heat the heating plate.

[0007] The present disclosure is illustrated by way of example, and not by way of limitation, in the drawings of the accompanying drawings, where like reference numerals designate like elements. It should be noted that different references to “an embodiment” or “one embodiment” in this disclosure are not necessarily to the same embodiment, and such references mean at least one.
[0008] Figure 1 illustrates a substrate support assembly according to certain embodiments.
[0009] Figures 2A-2C illustrate components of a substrate support assembly according to certain embodiments.
[0010] Figures 3A-3C illustrate components of a substrate support assembly according to certain embodiments.
[0011] Figure 4 illustrates a method of using a substrate support assembly according to certain embodiments.

[0012] Embodiments described herein relate to high temperature susceptors (e.g., substrate support assemblies) with rapid heat dissipation capabilities. High temperature susceptors may be configured for use at temperatures ranging from about 300 degrees Celsius to about 400 degrees Celsius. The high temperature susceptor may be configured to absorb heat during substrate processing operations (eg, plasma operations) of about 350 degrees Celsius to about 400 degrees Celsius.

[0013] Substrate processing systems are used to process substrates. The substrate is transferred into the processing chamber via a robot (eg, a transfer chamber robot). The processing chamber is sealed and substrate processing operations (e.g., chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma enhanced CVD (PECVD), plasma enhanced ALD (PEALD), etching, etc.) are performed on the substrate. It is carried out. The temperature of the substrate must be controlled before, during, and after substrate processing operations. Failure to control board temperature can result in board defects, inconsistent board performance, and reduced yield.

[0014] In conventional systems, a susceptor is used to support the substrate and attempt to control its temperature. When a plasma is formed on a substrate in a processing chamber, the plasma dissipates a large amount of heat, and conventional susceptors cannot dissipate the heat quickly enough to prevent overheating of the substrate. Some conventional susceptors have a heating component and a cooling component, where the cooling component carries the heating energy generated by the heating component.

[0015] The components, systems, and methods disclosed herein provide a high temperature susceptor with rapid heat dissipation capability.

[0016] A substrate support assembly (e.g., a susceptor) is configured to support a substrate (e.g., glass, display, wafer, semiconductor) in a processing chamber (e.g., of a substrate processing system). . The substrate support assembly includes a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate. An electrostatic chuck is placed on the heating plate (or is part of the heating plate). The electrostatic chuck is configured to support a substrate (e.g., a substrate is placed on an upper surface of the electrostatic chuck, and the electrostatic chuck secures the substrate to the substrate support assembly through electrostatic forces).

[0017] The cooling plate defines one or more channels to receive heat transfer fluid. The gas distribution plate defines an interior volume configured to receive a gas (eg, helium, argon, etc.). In some embodiments, the heating plate includes a resistive heater (eg, an electric heater).

[0018] A controller (e.g., coupled to a substrate support assembly) determines whether the processing chamber is in an idle state (e.g., not performing substrate processing operations) or an active state (e.g., performing substrate processing operations). ) to determine whether it is in In some embodiments, the controller determines whether the processing chamber is in an idle state or in an active state, associated with a substrate support assembly (e.g., located proximate to an electrostatic chuck, located proximate to a substrate). The determination is made based on temperature data received from a sensor (located proximate the top surface of the substrate support assembly). In response to temperature data meeting the first threshold temperature, the controller determines that the processing chamber is in an idle state. In response to temperature data meeting the second threshold temperature, the controller determines that the processing chamber is in an active state. In response to determining that the processing chamber is in an idle state, the controller may cause the resistive heater to heat the heating plate (e.g., and substrate). In response to determining that the processing chamber is in an active state, the controller may prevent the resistive heater from heating the heating plate and, in some embodiments, may cause a heat transfer fluid to flow through the cooling plate to cool the substrate. there is. In some embodiments, the controller causes a constant flow of heat transfer fluid through the cooling plate. The gas distribution plate provides a buffer (e.g., temperature gradient, thermal choke) between the cooling plate and the heating plate. In some embodiments, the temperature gradient between the resistive heater and the heat transfer fluid is from about 50 degrees Celsius to about 200 degrees Celsius. In some embodiments, the temperature gradient between the resistive heater and the heat transfer fluid is between about 50 degrees Celsius and about 100 degrees Celsius. In some examples, the heat transfer fluid is at a temperature of about 200 degrees Celsius to about 300 degrees Celsius and the heating plate is at a temperature between about 300 degrees Celsius and about 400 degrees Celsius.

[0019] The components, systems, and methods disclosed herein have advantages over conventional solutions. The substrate support assembly of the present disclosure is configured for use at higher temperatures (e.g., about 300 degrees to about 400 degrees Celsius) compared to conventional solutions configured for use at lower temperatures. The substrate support assembly of the present disclosure can support substrates at elevated temperatures (e.g., for example, to about 300 degrees Celsius to about 400 degrees Celsius) and to maintain the substrate at an elevated temperature (e.g., cool the substrate to substantially the same temperature) during substrate processing operations. Compared to conventional solutions, the substrate support assembly of the present disclosure can control substrate temperature more precisely (e.g., to within 10 degrees Celsius before, during, and after substrate processing operations) and improve substrate temperature uniformity. And substrate temperature control can be improved. The substrate support assembly of the present disclosure provides a buffer (e.g., a thermal choke) between the cooling plate and the heating plate so that the heat transfer fluid does not carry away the heating energy provided by the resistive heater of the heating plate and generates a lower temperature. temperature (i.e. more efficient, consumes less energy). The substrate support assembly of the present disclosure has advantages over conventional solutions, including fewer substrate defects, more consistent substrate performance, and increased yield.

[0020] While some embodiments of the disclosure describe using resistive heaters (e.g., electric heaters) in the heating plate, other embodiments describe using a heat transfer fluid, a solid state refrigerator, or a heat transfer fluid in the heating plate. One or more different types of heaters may be used, such as (e.g., Peltier devices, Peltier heaters, Peltier heat pumps, thermoelectric batteries, thermoelectric heat pumps, etc.).

[0021] 1 illustrates a substrate support assembly 100 according to certain embodiments. In some embodiments, substrate support assembly 100 includes one or more of an electrostatic chuck, a vacuum chuck, a susceptor, a workpiece support surface, etc. In some embodiments, the substrate support assembly 100 churns the substrate to the upper surface of the susceptor body 110 (e.g., for secure contact, uniform contact, etc.) with the susceptor body 110. ) (e.g., fix). A substrate may refer to a wafer, semiconductor, glass, glass substrate, electronic device, glass device, display device, etc.

[0022] In some embodiments, the substrate support assembly 100 includes a plasma processing chamber, an annealing chamber, a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, an ion implantation chamber, an etch chamber, a deposition chamber (e.g. For example, atomic layer deposition (ALD) chambers, chemical vapor deposition (CVD) chambers, physical vapor deposition (PVD) chambers, and/or plasma enhanced (PE) versions thereof, such as PEALD, PECVD, It is placed in a processing chamber such as PEPVD, etc.), an anneal chamber, etc. In some embodiments, the processing chamber has a high density plasma (HDP) source with a high temperature (e.g., greater than 350 degrees Celsius) to provide a large amount of heat to the substrate. Typically, large amounts of heat cause the substrate temperature to rise, causing problems for the substrate (eg, causing problems for devices on glass). To precisely control the substrate temperature, a substrate support assembly 100 (e.g., susceptor body 110) containing a resistive heater and a heat transfer fluid (e.g., a high temperature heat transfer fluid) heats the substrate. It is used to maintain a set temperature of the substrate (e.g., to maintain the substrate at a substantially constant temperature) by removing a large amount of heat from the plasma source.

[0023] Substrate support assembly 100 may have both heating and cooling functions, is capable of operating at high temperatures (e.g., due to internal heaters such as resistive heaters 122), and is capable of operating at high temperatures (e.g., due to a flowing coolant). Due to this) it may be possible to discharge a large amount of external heat in a short period of time. A substrate support assembly (e.g., a susceptor) may be used to support the substrate and control the temperature of the substrate. When a plasma forms over a substrate, it can dissipate a large amount of heat. The board support assembly dissipates heat quickly to prevent board overheating. The present disclosure provides a heating element (e.g., resistive heater 122) and a heat transfer fluid channel (e.g., channels 142) in one body (e.g., susceptor body 110). Can be combined. A gas distribution plate 130 (eg, a helium distribution layer (HDL)) may be disposed between the resistive heater 122 and the channels 142 to conserve energy. Gas distribution plate 130 may distribute the gas flow such that the gas pressure between substrate 160 and the top surface of substrate support assembly 100 is uniform (e.g., gas distribution plate 130 may distribute gas flow between substrate 160 and the top surface of substrate support assembly 100). ), the gas distribution plate 130 can act as a thermal choke between the resistive heaters 122 and the heat transfer fluid (e.g., coolant), so that the resistive heaters 122 ) of heating energy from being carried by the heat transfer fluid flow (e.g., the gas distribution plate 130 creates a critical temperature difference between the channels 142 and the resistive heater 122 and , more stable lower temperature coolants can be used, and less heating power is used to maintain the temperature difference). Resistive heaters 122 and heat transfer fluid may maintain substrate 160 at a temperature of about 200 degrees Celsius to about 400 degrees Celsius and dissipate heat when substrate processing operations (e.g., radio frequency (RF), plasma, etc.) occur. Can allow rapid discharge. A heating element (e.g., resistive heater 122) may be disposed proximate the top surface of the substrate support assembly 100 and the channels 142 may be disposed proximate the bottom surface of the substrate support assembly 100. It may be (for example, it may be disposed with the gas distribution plate 130 therebetween).

[0024] Gas distribution plate 130 may increase the distance between resistive heater 122 and channels 142 to provide a thermal choke. Gas distribution plate 130 may be substantially hollow to reduce the amount of heat conduction through the solid material of gas distribution plate 130. The material of the heating plate 120 between the resistive heater 122 and the gas distribution plate 130 can dissipate heat laterally. The gas distribution plate 130 allows for a greater temperature difference between the resistive heaters 122 and the heat transfer fluid in the channels 142. The lower the temperature of the heat transfer fluid, the more efficient it is and uses less energy. Little heating power is used during the processing chamber's idle state, and the substrate support assembly 100 dissipates heat within a few seconds after the processing chamber becomes active (e.g., RF turned on).

[0025] In some embodiments, heat transfer fluid flows constantly through channels 142 to more quickly respond to changes in temperature (e.g., flows during active and idle states of the processing chamber, and heat transfer A shut-off valve for the fluid may not be used). In some embodiments, heat transfer fluid flows through channels 142 during an active state of the processing chamber (e.g., a shut-off valve for the heat transfer fluid is used) rather than during an idle state of the processing chamber. conserve energy while In some embodiments, heat transfer fluid flows through channels 142 prior to activation of the processing chamber (e.g., when a process recipe is started).

[0026] Substrate support assembly 100 includes a susceptor body 110. Substrate support assembly 100 may include a susceptor (e.g., an electrostatic chuck (ESC or E-chuck) susceptor) including a susceptor body 110. The susceptor body 110 includes a resistive heater 122 (e.g., an electrical resistive heater, an electrical resistance heater, etc.), and the susceptor body 110 forms an internal volume 132 for receiving a gas. , the susceptor body 110 defines channels 142 (e.g., heating and/or cooling channels) for receiving heat transfer fluid. The interior volume 132 is disposed over the channels 142 . Resistive heater 122 is disposed above interior volume 132. The interior volume 132 is a buffer (e.g., a heat choke) between the resistive heater 122 and the cooling provided by the heat transfer fluid in the channels 142.

[0027] In some embodiments, susceptor body 110 has one or more plates, each of which includes one or more of heater 122, interior volume 132, or channels 142. In some embodiments, the heating plate 120 includes a resistive heater, the gas distribution plate 130 defines an interior volume 132 that contains the gas, and the cooling plate has channels that contain a heat transfer fluid ( 142). In some embodiments, heating plate 120 is the top plate, gas distribution plate 130 is the middle plate, and cooling plate 140 is the bottom plate (e.g., the top plate is on the middle plate, The middle plate is on the bottom plate).

[0028] In some embodiments, the heat transfer fluid is a synthetic, organic heat transfer medium. In some embodiments, the heat transfer fluid is operable for use in the liquid phase in a closed forced circulation heat transfer system. In some embodiments, the heat transfer fluid is operable so that it can be used over an operating range (e.g., from about -5 degrees Celsius to about 400 degrees Celsius) while maintained under pressure. In some embodiments, the heat transfer fluid has a boiling range of greater than about 350 degrees Celsius to about 400 degrees Celsius at atmospheric pressure. In some embodiments, the heat transfer fluid is operable to leave no deposits on the walls. In some embodiments, the heat transfer fluid has a liquid, clear appearance at about 20 degrees Celsius. In some embodiments, the heat transfer fluid has a chlorine content of less than about 10 parts per million (ppm). In some embodiments, the heat transfer fluid has a density of about 1.0 to about 1.1 (about 1.04 to about 1.05) grams per milliliter at about 20 degrees Celsius. In some embodiments, the heat transfer fluid has a viscosity of about 42 to about 52 millimeters squared per second at about 20 degrees Celsius. In some embodiments, the heat transfer fluid is compatible with graphite, polytetrafluoroethylene (PTFE), and fluoroelastomers. In some embodiments, the heat transfer fluid is operable to be heated to about 350 degrees Celsius to about 400 degrees Celsius. In some embodiments, the heat transfer fluid is operable to be heated to a temperature of about 200 degrees Celsius to about 400 degrees Celsius. In some embodiments, the heat transfer fluid is operable to be heated to a temperature of about 200 degrees Celsius to about 300 degrees Celsius. In some embodiments, the heat transfer fluid is operable to be heated to a temperature of about 300 degrees Celsius to about 400 degrees Celsius. In some embodiments, the heat transfer fluid is configured to maintain the susceptor body 110 within a range of about 10 degrees Celsius during substrate processing. In some embodiments, substrate support assembly 100 (e.g., susceptor body 110) includes one or more electrically resistive heaters 122 in addition to a heat transfer fluid to control the temperature of the substrate.

[0029] In some embodiments, substrate support assembly 100 (e.g., susceptor body 110) includes an electrostatic chuck 150 on heating plate 120. In some embodiments, electrostatic chuck 150 is configured to support substrate 160 .

[0030] In some embodiments, a substrate is placed (e.g., secured) (e.g., via electrostatic chuck 150) on substrate support assembly 100 (e.g., in susceptor body 110). (is electrostatically fixed). In some embodiments, in response to the processing chamber being in an idle state (e.g., not performing a substrate processing operation), the substrate support assembly 100 may heat the substrate temperature to a predetermined temperature via the resistive heater 122. Maintained within plus or minus 10 degrees of the temperature (e.g., a predetermined temperature of about 200 degrees Celsius to about 350 degrees Celsius), and the processing chamber is active (e.g., performing substrate processing operations, RF is on). In response to being in a plasma processing state, etc.), the substrate support assembly 100 maintains the substrate within plus or minus 10 degrees of a predetermined temperature through heat transfer fluid in channels 142. Substrate support assembly 100 is configured to dissipate heat from a plasma source (eg, heat from the substrate) during substrate processing operations.

[0031] In some embodiments, the heating plate 120 and the gas distribution plate 130 are coupled (eg, bonded, fastened, welded, glued, etc.) together. In some embodiments, gas distribution plate 130 and cooling plate 140 are coupled (eg, bonded, fastened, welded, glued, etc.) together. In some embodiments, interior volume 132 is formed by at least a portion of a lower surface of gas distribution plate 130 and an upper surface (e.g., a planar upper surface) of cooling plate 140. In some embodiments, at least a portion of the upper surface of the cooling plate 140 is secured (e.g., bonded) to at least a portion of the lower surface of the gas distribution plate 130 (e.g., a peripheral portion, an inner portion, etc.). , fastening, welding, etc.). In some examples, interior volume 132 is formed by an upper surface of cooling plate 140 (e.g., secured to each other) and a lower surface of the gas distribution plate (e.g., a planar lower surface). In some examples, interior volume 132 is formed by an upper surface of cooling plate 140 (e.g., secured to each other) and a lower surface of the gas distribution plate (e.g., a planar lower surface). In some examples, interior volume 132 is formed by the upper surface of gas distribution plate 130 and the lower surface of heating plate 120 (e.g., fixed together).

[0032] In some embodiments, at least a portion of the susceptor body 110 is made of a metal matrix and ceramic. The metal matrix may be one or more of an aluminum matrix, a magnesium matrix, a titanium matrix, a cobalt matrix, or a cobalt-nickel alloy matrix. The ceramic may be one or more of silicon carbide, carbon fiber, boron filament, alumina, etc. Ceramics can be particles, fibers, filaments, etc. In some embodiments, susceptor body 110 is about 70% ceramic by volume and about 30% metal. In some embodiments, susceptor body 110 is at least about 40% ceramic by volume (eg, at least about 50% ceramic particles by volume). In some embodiments, susceptor body 110 is fabricated by dispersing reinforcing material (eg, ceramic particles) within a metal matrix. In some embodiments, the reinforcing material is coated to prevent chemical reaction with the metal matrix (eg, carbon fibers coated with nickel or titanium boride). The metal matrix may be a monolithic material with embedded reinforcing materials.

[0033] In some embodiments, electrostatic chuck 150 includes a coating (eg, plasma-spray coating, e-chuck layer, alumina, one or more dielectric materials, etc.). The coating may be the top surface of electrostatic chuck 150. Coating 118 may protect susceptor body 110 from substrate processing operations. In some embodiments, the corresponding coefficients of thermal expansion (CTE) of cooling plate 140, gas distribution plate 130, heating plate 120, electrostatic chuck 150, and coating 118 are within each other's critical range ( For example, about 10%, about 5%, or about 1%).

[0034] In some embodiments, gas distribution plate 130 (e.g., helium distribution plate) is secured (e.g., with screws) to a component of susceptor body 110 (e.g., cooling plate 140). , fasteners such as bolts, etc.). Gas distribution plate 130 includes an interior volume 132 (eg, channels). A gas (e.g. helium, argon, etc.) flows through the interior volume. Holes (e.g., openings, channels) of the susceptor body 110 (e.g., holes in the coating, holes in the heating plate 120, holes in the electrostatic chuck 150) are internal to the susceptor body 110. It is aligned with one or more portions of volume 132. Gas flows through interior volume 132 and holes to a location above susceptor body 110 (e.g., a location below substrate 160). Gas distribution plate 130 may distribute gas substantially evenly through holes 119 to different locations beneath the substrate. Substrate support assembly 100 (e.g., electrostatic chuck 150) may use voltage to secure substrate 160 to susceptor body 110. The pressure provided by the gas flowing through the interior volume 132 and the holes may be less than the pressure provided by the voltage of the electrostatic chuck that secures the substrate 160 to the susceptor body 110. In some embodiments, at least a portion of gas distribution plate 130 includes a coating (eg, plasma spray coating, alumina, dielectric materials, etc.) to prevent corrosion during substrate processing.

[0035] In some embodiments, substrate support assembly 100 includes a susceptor shaft 170. The susceptor shaft 170 is disposed below the cooling plate 140. In some embodiments, at least a portion of susceptor shaft 170 includes a coating (e.g., plasma spray coating, alumina, dielectric materials) to prevent corrosion during substrate processing. In some embodiments, at least a portion (e.g., an external portion) of electrostatic chuck 150, heating plate 120, gas distribution plate 130, cooling plate 140, and/or susceptor shaft 170. ) include coatings (e.g., plasma spray coatings, alumina, dielectric materials) to prevent corrosion during substrate processing.

[0036] The heat transfer fluid flows through the supply channel of the susceptor shaft 170 to the channels 142 of the susceptor body 110 and from the channels 142 of the susceptor body 110 to the susceptor shaft 170. It is configured to flow into the return channel. Heat transfer fluid may flow through the supply channel, channels 142, and return channel at about 50 liters per minute to about 150 liters per minute. The heat transfer fluid may have a temperature of about 300 degrees Celsius to about 400 degrees Celsius. In some embodiments, the supply channel and return channel are formed by the susceptor shaft 170. In some embodiments, the supply tube forms a supply channel and the return tube forms a return channel. Supply and return tubes are routed through the internal volume of the susceptor shaft 170.

[0037] In some embodiments, substrate support assembly 100 includes a manifold (eg, a high temperature heat transfer fluid manifold). The heat transfer fluid is supplied from a heat transfer fluid supply (e.g., heat transfer fluid source, pump, valve, etc.), through a supply channel, through a first channel in the manifold, through channels 142, in the manifold. It may flow through a second channel and through a return channel. The heat transfer fluid from the return channel may be processed (e.g., heated, cooled, filtered, flow increased, pumped, etc.) and provided to the supply channel. The manifold may be fixed (e.g., fastened, bonded, etc.) to the susceptor body 110 (e.g., to the cooling plate 140). In some embodiments, the manifold is secured to one or more of cooling plate 140, gas distribution plate 130, and/or susceptor shaft 170.

[0038] Gas (e.g., helium, argon, etc.) flows through gas channels in the susceptor shaft 170 to the interior volume 132 within the gas distribution plate 130 and heats the susceptor body 110 (e.g., It is configured to flow through holes in the plate 120, electrostatic chuck 150, etc.) to locations under the substrate 160. In some embodiments, the gas channel is formed by susceptor shaft 170. In some embodiments, the gas tube forms a gas channel. A gas tube is routed through the internal volume of the susceptor shaft 170.

[0039] In some embodiments, the supply channel and return channel each have an internal diameter of about 0.5 to 1.5 inches (e.g., about 1 inch), and the gas channel has an internal diameter of about 0.2 to about 0.3 inches (e.g., about 0.25 inches). has an inner diameter of

[0040] The processing chamber may be used to perform substrate processing operations that increase the temperature within the processing chamber. The substrate support assembly 100 may heat the susceptor body 110 to a temperature above room temperature and below the temperature of substrate processing operations. In some examples, substrate processing operations are at a temperature above the temperature of susceptor body 110. For example, substrate processing operations may exceed 350 degrees Celsius, and resistive heater 122 may heat susceptor body 110 to approximately 350 degrees Celsius. Resistive heater 122 heats the substrate to a temperature of about 300 degrees Celsius to about 400 degrees Celsius (e.g., about 350 degrees Celsius) while the processing chamber is idle (e.g., not performing substrate processing operations). It may be possible to operate to do so. The heat transfer fluid in channels 142 cools the substrate at a temperature of about 300 degrees Celsius to about 400 degrees Celsius (e.g., about 350 degrees Celsius) during an active state of the processing chamber (e.g., performing substrate processing operations). It may be operable to cool to temperature.

[0041] In some embodiments, controller 109 controls substrate support assembly 100, processing chamber, robot, one or more control valves, and/or various aspects of the substrate processing system. Controller 109 is and/or includes a computing device, such as a personal computer, server computer, programmable logic controller (PLC), microcontroller, etc. Controller 109 includes one or more processing devices, in some embodiments, general-purpose processing devices, such as a microprocessor, central processing unit, etc. More specifically, in some embodiments, the processing device is a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor that implements other instruction sets. These are processors that implement a combination of processors or instruction sets. In some embodiments, the processing device is one or more special-purpose processing devices, such as an application specific integrated circuit (ASIC), field programmable gate array (FPGA), digital signal processor (DSP), network processor, etc. In some embodiments, controller 109 includes a data storage device (e.g., one or more disk drives and/or solid state drives), main memory, static memory, network interface, and/or other components. . In some embodiments, controller 109 executes instructions to perform any one or more of the methods or processes described herein. The instructions are stored in a computer-readable storage medium that includes one or more of main memory, static memory, auxiliary storage, and/or a processing device (during execution of the instructions). In some embodiments, controller 109 is used to control one or more parameters of substrate support assembly 100 (eg, temperature, pressure, flow rate, voltage, etc.). Controller 109 receives sensor data from one or more sensors associated with substrate support assembly 100.

[0042] In some embodiments, one or more sensors provide sensor data to controller 109. The sensor may include one or more of a thermocouple sensor, a heat sensor, a temperature sensor, a pressure sensor, a flow sensor, a voltage sensor, etc.

[0043] In some embodiments, controller 109 receives sensor data associated with the temperature of the substrate (e.g., temperature of susceptor body 110) from a sensor (e.g., thermocouple, thermal sensor, temperature sensor). . In response to the temperature of the substrate meeting the first threshold temperature (e.g., a temperature greater than about 350 degrees Celsius), the controller 109 prevents the resistive heater 122 from heating the heating plate 120 and , a heat transfer fluid flows through the channels 142 to cool the substrate. In response to the temperature meeting the second threshold temperature (e.g., a temperature below about 350 degrees Celsius), controller 109 causes resistive heater 122 to heat heating plate 120 to heat the substrate. In some embodiments, controller 109 directs heat transfer fluid to flow through channels 142 during idle and active states of the processing chamber (e.g., by actuating a shutoff valve fluidly coupled to the substrate support assembly). do. In some embodiments, controller 109 causes heat transfer fluid to flow through channels 142 during an active state of the processing chamber (e.g., by activating a shutoff valve), and controller 109 causes (e.g., by activating a shutoff valve) Prevent heat transfer fluid from flowing through channels 142 during an idle state of the processing chamber (e.g., by activating a shutoff valve).

[0044] In some embodiments, controller 109 receives sensor data associated with the pressure of gas associated with gas distribution plate 130 from a sensor (e.g., pressure sensor, flow sensor, etc.). In some embodiments, the sensor data is associated with a gas inlet (e.g., of a gas channel within susceptor shaft 170). In some embodiments, sensor data is associated with interior volume 132. In some embodiments, the sensor data is associated with a location beneath the substrate 160 disposed on the susceptor body 110. Controller 109 can control the gas to be at a threshold pressure value. In some embodiments, controller 109 receives voltage data associated with the electrostatic chucking force securing substrate 160 to susceptor body 110. In some embodiments, the critical pressure value of the gas is determined based on voltage data (eg, electrostatic chucking force).

[0045] In some embodiments, the system includes a substrate support assembly 100, a controller 109, one or more sensors, one or more fluid temperature adjustment devices (e.g., fluid heater, fluid cooler, etc.), and one or more flow rate adjustment devices. Includes devices (e.g., pumps, valves, recirculating pumps, etc.).

[0046] In response to the substrate processing equipment being activated (e.g., turned on, activated by the controller 109) and/or the controller 109 determines that the processing chamber has met a first threshold temperature (e.g., In response to receiving sensor data (e.g., temperature data) indicating that the temperature is idle and below 350 degrees Celsius, the controller 109 causes the resistive heater 122 to heat the heating plate 120. do.

[0047] In response to the substrate processing equipment being activated (e.g., turned on, activated by controller 109) and/or controller 109 indicating that the processing chamber has met a second threshold temperature (e.g., In response to receiving sensor data (e.g., temperature data) indicating that the flow regulation device (e.g., pump, recirculating pump, etc.) is in an active state, greater than 350 degrees Celsius, the controller 109 causes the heat transfer fluid to flow through the supply channel, channels 142, and return channel.

[0048] In some embodiments, the controller 109 further causes a fluid temperature adjustment device (e.g., a heater, cooler, condenser, etc.) to perform temperature adjustment of the heat transfer fluid (e.g., a heater that recirculates heating the heat transfer fluid to a temperature of about 200 degrees Celsius to about 400 degrees Celsius).

[0049] In response to the substrate 160 being placed on the substrate support assembly 100 and/or in response to the substrate processing equipment being activated, the controller 109 causes the flow adjustment device (e.g., valve, pump) to Gas (e.g., helium) flows through the gas channel, through interior volume 132, and through the holes to the upper surface of substrate support assembly 100 (e.g., beneath the substrate).

[0050] Controller 109 controls the temperature of the substrate by controlling the resistive heater 122 and/or heat transfer fluid within channels 142 to heat the substrate during idle states and cool the substrate during active states. The controller 109 may control the temperature of the substrate to be within plus or minus 10 degrees Celsius (eg, about 340 degrees Celsius to about 360 degrees Celsius).

[0051] 2A-2C illustrate components of a substrate support assembly (e.g., substrate support assembly 100 of FIG. 1, susceptor body 110 of FIG. 1) according to certain embodiments. FIG. 2A illustrates a cross-sectional view of heating plate 220 (e.g., heating plate 120 of FIG. 1 ), and FIG. 2B illustrates a cross-sectional view of gas distribution plate 230 (e.g., gas distribution plate 130 of FIG. 1 ). ), and FIG. 2C illustrates a cross-sectional view of the cooling plate 240 (e.g., the cooling plate 140 of FIG. 1 ). Features in FIGS. 2A-2C having similar reference numerals to those in FIG. 1 may have functionality and/or structure similar or identical to the functionality and/or structure in FIG. 1 .

[0052] Referring to Figure 2A, heating plate 220 has one or more resistive heaters 222. In some embodiments, a controller (e.g., controller 109 of FIG. 1) operates the resistive heaters 222 in unison based on temperature data from one or more sensors (e.g., thermos couples). /or individually controlled. Heating plate 220 has one or more holes 224 (e.g., channels, openings) extending between the upper and lower surfaces of heating plate 220. Holes 224 are configured to allow gas (e.g., helium, argon, etc.) from the interior volume 232 of gas distribution plate 230 to a location between the substrate and the upper surface of the substrate support assembly.

[0053] Referring to FIG. 2B , the lower surface of the gas distribution plate 230 may define one or more internal volumes 232 for receiving gas (eg, helium, argon, etc.). An upper surface (e.g., a planar upper surface) of the gas distribution plate 230 may be secured (e.g., bonded) to a lower surface (e.g., a planar lower surface) of the heating plate 220. . At least a portion of the lower surface of the gas distribution plate 230 may be secured (e.g., fastened) to an upper surface (e.g., a planar upper surface) of the cooling plate 240. In some embodiments, the upper surface of cooling plate 240 and the lower surface of gas distribution plate 230 surround interior volume 232 (e.g., gas distribution plate 230 surrounds interior volume 232 and the cooling plate 240 provides the lower surface of the interior volume 232).

[0054] One or more adapters (e.g., gas pluming inlets) configured to couple the interior volume 232 to a gas channel of the susceptor shaft (e.g., susceptor shaft 170 in FIG. 1). It can be. The interior volume 232 aligns with holes 224 in the susceptor body to provide gas to a location beneath the substrate.

[0055] In some embodiments, gas distribution plate 230 includes a superstructure 234, a peripheral structure 236, an internal structure 238, and one or more support structures 239. Superstructure 234, peripheral structure 236, internal structure 238, and support structures 239 may be single continuous components (eg, formed by molding and/or material removal). Superstructure 234 may have a planar upper surface (e.g., configured to be secured to the bottom surface of heating plate 220), and may include peripheral structure 236, internal structure 238, and support structures ( 239). Internal structure 238 may be coupled to a gas channel in the susceptor shaft and may provide gas into internal volume 232. The interior volume 232 is bounded on the top by the superstructure 234, on the sides by the peripheral structure 236, in the middle by the interior structure 238, and on the bottom by the upper surface of the cooling plate 240. Can be sealed from the environment. Support structures 239 may extend partially between peripheral structure 236 and internal structure 238. Peripheral structure 236 , internal structure 238 , and/or one or more support structures 239 may be attached to the superstructure (e.g., in response to coupling gas distribution plate 230 to cooling plate 240 ). It may extend from 234 to the upper surface of cooling plate 240. The support structures 239 prevent deformation of the gas distribution plate 230 (eg, prevent changes in the height of the interior volume 232).

[0056] Gas distribution plate 230 maintains a substantially uniform gas pressure between the electrostatic chuck and the substrate (e.g., pressure values within +/-10%, +/-5%, +/-1%, etc. at different locations). It is configured to distribute the gas to provide.

[0057] The ratio of the solid area (e.g., the area of the peripheral structure 236, internal structure 238, and support structures 239) to the total area of the gas distribution plate (e.g., superstructure 234) is It could be up to 10% or up to 5%.

[0058] Referring to Figure 2C, cooling plate 240 is for cooling the susceptor body (e.g., susceptor body 110 of Figure 1) and the substrate disposed on the susceptor body during the active state of the processing chamber. Forming one or more channels 242 configured to receive heat transfer fluid.

[0059] FIGS. 3A-3C illustrate diagrams of components of substrate support assembly 300 (e.g., substrate support assembly 100 of FIG. 1) according to certain embodiments. Figure 3A is a side view of susceptor shaft 370 (e.g., susceptor shaft 170 of Figure 1), Figure 3B is a bottom view of susceptor shaft 370, and Figure 4C is a susceptor shaft 370. ) is a side view of the substrate support assembly 300 without. Features with similar reference numerals compared to features in other drawings may include the same or similar structure and/or functionality.

[0060] Susceptor shaft 370 includes an elongated lower portion and a flanged upper portion. The flanged upper portion is configured to be secured (e.g., fastened) to a cooling plate (e.g., cooling plate 240 in FIG. 2C, cooling plate 140 in FIG. 1). A gas distribution plate 330 (e.g., gas distribution plate 230 in FIG. 2B, gas distribution plate 130 in FIG. 1) is disposed on cooling plate 340, and a heating plate 320 (e.g. For example, heating plate 220 in FIG. 2A and heating plate 120 in FIG. 1) are placed on gas distribution plate 330. An electrostatic chuck 350 (e.g., electrostatic chuck 150 of FIG. 1) may be disposed on the heating plate 320.

[0061] Supply channel 372, return channel 374, and gas channel 376 are disposed within susceptor shaft 370. In some embodiments, supply channel 372, return channel 374, and gas channel 376 are formed by tubes routed through susceptor shaft 370.

[0062] 4 illustrates a method 400 of using a substrate support assembly according to certain embodiments. In some embodiments, one or more of the operations of method 400 are performed by a controller (e.g., controller 109 of FIG. 1). Although shown in a specific sequence or order, unless otherwise specified, the order of processes may be modified. Accordingly, the illustrated embodiments should be understood as examples only, and the illustrated processes may be performed in a different order, and some processes may be performed in parallel. Additionally, one or more processes may be omitted in various embodiments. Accordingly, not all processes are necessary in all embodiments.

[0063] Referring to method 400 of FIG. 4, at block 402, a gas (e.g., helium, argon, etc.) is passed through a gas channel in the susceptor shaft, through the interior volume of the gas distribution plate, and through the heating plate. and through holes in the electrostatic chuck to a location beneath the substrate. The controller may provide gas flow through a flow regulating device (eg, pump, valve, etc.). The gas provides pressure on the lower surface of the substrate. In some embodiments, a peripheral portion of the substrate is substantially sealed to the susceptor body such that the gas is substantially enclosed beneath the substrate. The controller may provide gas flow based on sensor data (eg, pressure sensor data, flow rate data, etc.). The controller may ensure that the pressure of the gas beneath the substrate is lower than the checking pressure (e.g., electrostatic chucking pressure) of the sensor body.

[0064] In some embodiments, at block 404 sensor data associated with a substrate disposed on a substrate support assembly is received. In some embodiments, the sensor data is associated with the temperature of the substrate and/or susceptor body. The controller may receive sensor data from a temperature sensor (e.g., thermocouple).

[0065] At block 406, the processing chamber is determined to be in an idle state (e.g., based on sensor data). In some embodiments, in response to determining that the temperature of the substrate and/or susceptor body meets the first threshold temperature (e.g., below about 350 degrees Celsius), the controller may cause the processing chamber to enter an idle state (e.g., For example, it may be determined to be in a state of not performing substrate processing operations. In some embodiments, the controller receives data indicating that the processing chamber is not performing substrate processing operations. In some embodiments, a controller controls the processing chamber.

[0066] At block 408, in response to the processing chamber being in an idle state, a resistive heater disposed on the heating plate is caused to heat the heating plate (e.g., to heat a substrate disposed on the susceptor body). During the idle state, the resistive heater causes the heating plate to be at a temperature (e.g., about 350 degrees Celsius) below the substrate processing operating temperature (e.g., about 350 degrees Celsius to 400 degrees Celsius), thereby keeping the substrate above room temperature. Heat and maintain at a temperature closer to operating temperature (e.g., approximately 350 degrees Celsius).

[0067] In some embodiments, the susceptor body is heated to a temperature of about 300 degrees Celsius to about 400 degrees Celsius (e.g., about 350 degrees Celsius) before the substrate is disposed on the susceptor body (e.g., via resistive heaters). can be heated. In response to the substrate being placed on the susceptor body, the substrate is subjected to a temperature of about 300 degrees Celsius to about 400 degrees Celsius (e.g., through heat conduction from the susceptor body) (e.g., about 350 degrees Celsius). is heated to

[0068] At block 410, the processing chamber is determined to be in an active state (e.g., based on sensor data). The controller may determine that the processing chamber is in an active state based on sensor data associated with the temperature of the substrate and/or susceptor body. The controller may receive data indicating that the processing chamber is performing a substrate processing operation. The controller may have a schedule indicating when the processing chamber should perform substrate processing operations. The controller may cause the processing chamber to perform substrate processing operations.

[0069] At block 412, in response to the processing chamber being in an active state, the resistive heater is prevented from heating the heating plate. In some embodiments, the heating plate includes multiple resistive heaters (eg, forming heat zones). The controller may cause certain resistive heaters to heat to a certain temperature (e.g., at a certain voltage) and prevent certain resistive heaters from heating the heating plate based on sensor data associated with different locations on the susceptor body. You can.

[0070] At block 414, in response to the processing chamber being in an active state, heat transfer fluid flows through channels formed by the susceptor body (e.g., channels formed by a cooling plate) to cool the substrate. It is done. The controller may cause temperature adjustment (e.g., cooling) of the heat transfer fluid flowing through the channels of the susceptor body to cool the substrate, via a fluid temperature adjustment device (e.g., cooler, condenser). The controller causes heat transfer fluid to flow (e.g., at about 70 liters per minute) through the susceptor body through a flow regulating device (e.g., a pump, recirculating pump, and/or valve) to The body may be cooled to a temperature of about 300 degrees Celsius to about 400 degrees Celsius (e.g., about 350 degrees Celsius). The controller may cause a lower temperature (e.g., about 300 degrees Celsius to about 350 degrees Celsius) heat transfer fluid to flow through the susceptor body. The heat transfer fluid absorbs excess heat from the substrate processing operation, bringing the substrate (e.g., and the susceptor body) to a critical temperature (e.g., about 350 degrees Celsius) of the idle temperature of the substrate on the susceptor body (e.g., about 350 degrees Celsius). For example, you can keep it within plus or minus 10 degrees Celsius).

[0071] In some embodiments, the controller causes heat transfer fluid to flow through the channels during active states and during idle states of the processing chamber.

[0072] In some embodiments, each of the operations of method 400 is performed while maintaining a sealed environment in the processing chamber. In some embodiments, the predetermined temperature of the heat transfer fluid, susceptor body, and/or substrate is adjusted based on the temperature of substrate processing operations. In some embodiments, for each predetermined temperature of the heat transfer fluid, susceptor body, and/or substrate associated with a corresponding substrate processing operation, the temperature of the heat transfer fluid, susceptor body, and/or substrate corresponds to The substrate is maintained within a critical temperature (e.g., plus or minus 10 degrees Celsius) before, during, and after processing operations.

[0073] Unless specifically stated otherwise, “causing,” “determining,” “heating,” “cooling,” “flowing,” and “receiving.” Terms such as “receiving,” “transmitting,” and “generating” refer to data expressed as physical (electronic) quantities within computer system registers and memories. Refers to actions and processes performed or implemented by computer systems that convert and manipulate other data expressed in physical quantities in fields or registers or other such information storage, transmission or display devices. In addition, as used herein, terms such as “first,” “second,” “third,” “fourth,” etc. are meant as indicators for distinguishing between different elements, and their numerical designation It does not have an ordinal meaning.

[0074] Examples described herein also relate to apparatus for performing the methods described herein. In some embodiments, the device is specifically configured to perform the methods described herein, or it comprises a general purpose computer system optionally programmed by a computer program stored on the computer system. In some embodiments, such computer program is stored on a tangible, computer-readable storage medium.

[0075] The methods and illustrative examples described herein are not inherently related to any particular computer or other device. A variety of general-purpose systems may be used in accordance with the teachings described herein, or the methods and/or their individual functions, routines, subroutines, or operations described herein. More specialized devices may be constructed to perform each. Examples of structures for various of these systems are presented in the description above.

[0076] The preceding description sets forth numerous specific details, such as examples of specific systems, components, methods, etc., to provide a good understanding of some embodiments of the disclosure. However, it will be apparent to one skilled in the art that at least some embodiments of the disclosure may be practiced without these specific details. In other examples, well-known components or methods are not described in detail or are presented in simple block diagram format to avoid unnecessarily obscuring the disclosure. Accordingly, the specific details set forth are illustrative only. Particular implementations may differ from these example details and still be considered within the scope of the present disclosure.

[0077] As used herein, the terms “over,” “under,” “between,” “disposed on,” “supports,” and “on” refer to one material layer relative to other layers or components. Or it indicates the relative position of the component. For example, one layer disposed on, above, or below another layer may be in direct contact with the other layer, or may have one or more intermediate layers. Additionally, one layer disposed between two layers may be in direct contact with the two layers, or may have one or more intermediate layers. Likewise, unless explicitly stated otherwise, a feature disposed between two features may be in direct contact with adjacent features or may have one or more intermediate layers.

[0078] Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Accordingly, appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. Additionally, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or.” When the term “about” or “approximately” is used herein, it is intended to mean that the nominal value presented is accurate to within ±10%.

[0079] Although the operations of the methods herein are shown and described in a particular order, the order of the operations of each method can be modified such that certain operations can be performed in reverse order, so that certain operations can be performed at least partially concurrently with other operations. It can be. In other embodiments, instructions or sub-operations of separate operations may occur in an intermittent and/or alternating manner.

[0080] It is understood that the above description is intended to be illustrative and not limiting. Upon reading and understanding the above description, many other embodiments will be apparent to those skilled in the art. Accordingly, the scope of the present disclosure should be determined by reference to the appended claims along with the full scope of equivalents to which they are entitled.

Claims (20)

A substrate support assembly, comprising:
A cooling plate forming one or more channels configured to receive a heat transfer fluid;
a gas distribution plate disposed on the cooling plate, the gas distribution plate defining an internal volume configured to receive a gas;
a heating plate disposed on the gas distribution plate, the heating plate comprising a resistive heater; and
an electrostatic chuck disposed on the heating plate, the electrostatic chuck configured to support a substrate in a processing chamber,
Substrate support assembly. According to claim 1,
It further includes a shaft disposed below the cooling plate, wherein the gas flows through a gas channel in the shaft into the internal volume of the gas distribution plate and through openings formed in the heating plate and the electrostatic chuck. configured to flow to a location between the substrate and the electrostatic chuck,
Substrate support assembly. According to claim 1,
wherein the heat transfer fluid is operable to a temperature of about 200 degrees Celsius to about 300 degrees Celsius to cool the substrate support assembly.
Substrate support assembly. According to claim 1,
wherein the resistive heater is operable to heat the heating plate to about 300 degrees Celsius to about 400 degrees Celsius.
Substrate support assembly. According to claim 1,
wherein the gas distribution plate is configured to distribute the gas to provide a substantially uniform gas pressure between the electrostatic chuck and the substrate.
Substrate support assembly. According to claim 1,
wherein the electrostatic chuck includes a coating, and the corresponding coefficients of thermal expansion (CTE) of the cooling plate, the gas distribution plate, the heating plate, the electrostatic chuck, and the coating are within a critical range of each other,
Substrate support assembly. According to claim 1,
wherein the gas distribution plate has a solid area to total area ratio of up to about 10 percent.
Substrate support assembly. According to claim 1,
operable to cause the heat transfer fluid to flow through the one or more channels during an idle state of the processing chamber and during an active state of the processing chamber,
Substrate support assembly. According to claim 1,
The substrate support assembly is fluidly coupled to a shut-off valve, which provides flow of the heat transfer fluid through the one or more channels during an active state of the processing chamber and during an idle state of the processing chamber. configured to be operative to prevent flow of the heat transfer fluid through the one or more channels during a condition,
Substrate support assembly. According to claim 1,
wherein the substrate support assembly is operable to maintain the substrate at a substantially constant temperature during an idle state of the processing chamber and during an active state of the processing chamber.
Substrate support assembly. According to claim 1,
The resistive heater is operable to heat the substrate support assembly to about 300 degrees Celsius to about 400 degrees Celsius during an idle state of the processing chamber, and the heat transfer fluid is operable to heat the substrate support assembly to about 300 degrees Celsius during an active state of the processing chamber. Operable to cool to about 400 degrees,
Substrate support assembly. According to claim 1,
wherein the gas distribution plate is operable to provide a temperature gradient between the resistive heater and the heat transfer fluid between about 50 degrees Celsius and about 200 degrees Celsius.
Substrate support assembly. As a system,
A substrate support assembly disposed in the processing chamber, the substrate support assembly comprising a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate; and
Includes a controller,
The controller is,
flowing a heat transfer fluid through one or more channels formed by the cooling plate;
Gas flows through the gas distribution plate, into openings formed by the heating plate, and from the openings in the heating plate to a location between the upper surface of the substrate support assembly and the substrate disposed on the substrate support assembly. Let it flow; and
causing a resistive heater disposed on the heating plate to heat the heating plate,
system. According to claim 13,
The controller additionally,
determine whether the processing chamber is in an idle state or an active state; and
In response to determining that the processing chamber is in the active state, preventing heating of the heating plate by the resistive heater,
wherein the controller causes the resistive heater to heat the heating plate in response to determining that the processing chamber is in the idle state.
system. According to claim 13,
The controller further causes the heat transfer fluid to flow through the one or more channels during an idle state of the processing chamber and during an active state of the processing chamber.
system. According to claim 13,
further comprising a shut-off valve fluidly coupled to the substrate support assembly, wherein the controller further provides flow of the heat transfer fluid through the one or more channels during an active state of the processing chamber and during an idle state of the processing chamber. actuating the isolation valve to prevent flow of the heat transfer fluid through the one or more channels,
system. As a method,
allowing a heat transfer fluid to flow through one or more channels formed by the cooling plate of the substrate support assembly;
Gas flows through a gas distribution plate of the substrate support assembly disposed on the cooling plate, through openings formed in a heating plate of the substrate support assembly disposed on the cooling plate, and through an upper surface of the substrate support assembly and processing. flowing from the chamber to a location between substrates disposed on the substrate support assembly; and
In response to the processing chamber being in an idle state, causing a resistive heater disposed at the heating plate to heat the heating plate.
method. According to claim 17,
Flowing the heat transfer fluid through the one or more channels is responsive to the processing chamber being in an active state,
method. According to claim 17,
further comprising preventing the resistive heater from heating the heating plate in response to the processing chamber being in an active state.
method. According to claim 17,
receiving temperature data from a sensor associated with the heating plate; and
further comprising determining whether the processing chamber is in an idle state or an active state based on the temperature data.
method.