TW202331826A - High temperature susceptor with fast heat drain capability - Google Patents

Abstract

A substrate support assembly includes a cooling plate forming one or more channels configured to receive heat transfer fluid. The substrate support assembly further includes a gas distribution plate disposed on the cooling plate. The gas distribution plate forms an interior volume configured to receive a gas. The substrate support assembly further includes a heating plate disposed on the gas distribution plate. The heating plate includes a resistive heater. The substrate support assembly further includes an electrostatic chuck disposed on the heating plate. The electrostatic chuck is configured to support a substrate in a processing chamber.

Description

High temperature base with fast heat removal capability

Embodiments of the present disclosure relate to susceptors, such as those used in conjunction with substrate processing systems, and in particular to susceptors for high temperature applications.

In substrate processing and other electronic device processing, processing chambers are used to perform substrate processing operations. The temperature of the substrate in the processing chamber is controlled to avoid defects.

The following is a brief overview of the disclosure, which provides a basic understanding of some aspects of the disclosure. This summary is not an extensive overview of the disclosure. This summary is not intended to identify key or critical elements of the disclosure, nor does it describe any aspect of a particular implementation or claim of the disclosure. Its sole purpose is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description that is presented later.

In one aspect of the disclosure, a substrate support assembly includes a cooling plate formed with one or more channels configured to receive a heat transfer fluid. The substrate support assembly further includes a gas distribution plate disposed on the cooling plate. The gas distribution plate forms an interior volume configured to receive gas. The substrate support assembly further includes a heating plate disposed on the gas distribution plate. The heating plate contains resistive heating elements. The substrate support assembly further includes an electrostatic chuck disposed on the gas heated plate. An electrostatic chuck is configured to support a substrate in a processing chamber.

In another aspect of the disclosure, a system includes a substrate support assembly disposed in a processing chamber. The substrate support assembly includes a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate. The system further includes a controller. A controller flows a heat transfer fluid through the one or more channels formed by the cooling plates. The controller further causes the gas to flow through the gas distribution plate to an opening formed in the heating plate, and from the opening in the heating plate to a location between the upper surface of the substrate support assembly and a substrate disposed on the substrate support assembly. The controller further causes a resistive heater arranged in the heating plate to heat the heating plate.

In another aspect of the disclosure, a method includes flowing a heat transfer fluid through one or more fluids formed by cooling plates of a substrate support assembly. The method further includes flowing the gas through a gas distribution plate of the substrate support assembly disposed on the cooling plate, through an opening formed in a heating plate of the substrate support assembly disposed on the cooling plate, and to the upper surface of the substrate support assembly and the A position between substrates in a processing chamber on a substrate support assembly. In response to the processing chamber being idle, the method further includes heating the heating plate with a resistive heater disposed in the heating plate.

Embodiments described herein relate to high temperature susceptors (eg, substrate support assemblies) with rapid heat removal capabilities. The high temperature susceptor can be configured for use at about 300 to about 400 degrees Celsius. The high temperature susceptor can be configured to absorb heat during substrate processing operations, such as plasma operations, at about 350 to about 400 degrees Celsius.

A substrate processing system is used to process substrates. The substrate is transferred into the processing chamber via a robot, such as a transfer chamber robot. The processing chamber is sealed, and substrate processing operations (such as chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma enhanced CVD (PECVD), plasma enhanced ALD ( PEALD), etching, etc.). The temperature of the substrate is controlled before, during and after substrate processing operations. Failure to control the temperature of the substrate can lead to substrate defects, inconsistent substrate performance, reduced yield, etc.

In known systems, a pedestal is used to support the substrate, and the pedestal is used to attempt to control the temperature of the substrate. When a plasma is formed over a substrate in a processing chamber, the plasma dissipates a large amount of heat, and conventional susceptors cannot remove the heat quickly enough to prevent the substrate from overheating. Some conventional susceptors have a heating element and a cooling element, wherein the cooling element removes the heating energy generated by the heating element.

The components, systems, and methods disclosed herein provide high temperature susceptors with rapid heat removal capabilities.

A substrate support assembly (eg, susceptor) is configured to support a substrate (eg, glass, display, wafer, semiconductor) in a processing chamber (eg, of a substrate processing system). The substrate support assembly includes a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate. The electrostatic device is arranged on (or part of) the heating plate. The electrostatic chuck is configured to support a substrate (eg, the substrate is disposed on an upper surface of the electrostatic chuck, which secures the substrate to the substrate support assembly via electrostatic force).

The cooling plate forms one or more channels that receive the heat transfer fluid. The gas distribution plate forms an interior volume configured to receive a gas (eg, helium, argon, etc.). In some embodiments, the heating plate comprises a resistive heater (eg, an electric heater).

A controller (eg, coupled to the substrate support assembly) determines whether the processing chamber is in an idle state (eg, not performing substrate processing operations) or an active state (eg, performing substrate processing operations). In some embodiments, the controller determines that the processing chamber is idle based on temperature data received from sensors associated with the substrate support assembly (e.g., positioned near the substrate, positioned near the electrostatic chuck, positioned near the upper surface of the substrate support assembly) state is still active. In response to the temperature profile meeting the first threshold temperature, the controller determines that the processing chamber is in an idle state. In response to the temperature profile meeting the second threshold temperature, the controller determines that the processing chamber is active. In response to determining that the processing chamber is idle, the controller may cause the resistive heater to heat the heating plate (eg, the substrate). In response to determining that the processing chamber is active, the controller may prevent the resistive heater from heating the heating plate and, in some embodiments, flow a heat transfer fluid through the cooling plate to cool the substrate. In some embodiments, the controller continuously flows the heat transfer fluid through the cooling plate. The gas distribution plate provides a buffer between the cooling plate and the heating plate (e.g. temperature gradient, thermal plug). In some embodiments, the temperature gradient between the resistive heater and the heat transfer fluid is from about 50 degrees Celsius to about 200 degrees Celsius. In some embodiments, the temperature gradient between the resistive heater and the heat transfer fluid is from about 50 degrees Celsius to about 100 degrees Celsius. In some embodiments, the heat transfer fluid is at about 200 to about 300 degrees Celsius and the heating plate is at about 300 to about 400 degrees Celsius.

The components, systems and methods disclosed herein have advantages over conventional solutions. The substrate support assembly of the present disclosure is configured for use at high temperatures (eg, about 300 to about 400 degrees Celsius) compared to conventional solutions that are configured for use at lower temperatures. In contrast to conventional solutions that do not heat the substrate to a high temperature and do not maintain (cool) the temperature of the substrate during substrate processing operations, the substrate support assembly of the present disclosure is configured to heat the substrate to a high temperature, such as about 300 degrees Celsius. to about 400 degrees), and maintaining the substrate at this elevated temperature (eg, cooling the substrate to substantially the same temperature) during substrate processing operations. Compared to conventional solutions, the substrate support assembly of the present disclosure allows for more precise control of substrate temperature (e.g., within 10 degrees Celsius before, during, and after substrate processing operations, increasing substrate temperature uniformity and improving substrate temperature control). The substrate support assembly of the present disclosure provides a buffer (e.g., thermal plug) between the cooling plate and the heating plate so that the heat transfer fluid can be at a lower temperature (e.g., more efficient, consumes less energy) without entraining the heating plate The heating energy provided by the resistive heater in. Compared to conventional solutions, the substrate support assembly of the present disclosure has fewer substrate defects, more consistent substrate performance, higher yield, etc.

While some embodiments of the present disclosure describe the use of resistive heaters (such as electric heaters) in the heating plate, in other embodiments, one or more other types of heaters can be used in the heating plate, such as heat transfer fluid, solid state One or more of refrigerators (eg, Peltier devices, Peltier heaters, Peltier heat pumps, thermal batteries, thermoelectric heat pumps, etc.) and/or the like.

FIG. 1 illustrates a substrate support assembly 100 in accordance with certain embodiments. In some embodiments, the substrate support assembly 100 includes one or more of an electrostatic chuck, a vacuum chuck, a susceptor, a workpiece support surface, and/or the like. In some embodiments, the substrate support assembly 100 clamps the substrate to the upper surface of the susceptor body 110 (eg, makes contact with the susceptor body 110 firmer, more uniform, etc.). A substrate may refer to a wafer, semiconductor, glass, glass substrate, electronic device, glass device, display device, and/or the like.

In some embodiments, the substrate support assembly 100 is disposed in a processing chamber, such as a plasma processing chamber, an annealing chamber, a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, etc. chamber, ion implantation chamber, etch chamber, deposition chamber (such as atomic layer deposition (ALD) chamber, chemical vapor deposition (CVD) chamber, physical vapor deposition (PVD) chamber and/or its Plasma enhanced (PE) versions such as PEALD, PECVD, PEPVD, etc.), annealing chambers or similar. In some embodiments, the processing chamber has a high density plasma (HDP) source with a high temperature (eg, greater than 350 degrees Celsius) that provides substantial heat to the substrate. Large amounts of heat are known to raise the temperature of the substrate, causing problems with the substrate (such as causing problems with devices on glass). To precisely control the substrate temperature, a substrate support assembly 100 (e.g., susceptor body 110) comprising a resistive heater and a heat transfer fluid (e.g., a high temperature heat transfer fluid) is used to heat the substrate and to remove substantial heat from the plasma source ( For example, maintaining the substrate at a constant temperature) to maintain the set temperature of the substrate.

The substrate support assembly 100 can have heating and cooling functions and can operate at high temperatures (eg, caused by internal heaters such as resistive heaters 122 ) and reject large amounts of external heat (eg, caused by flowing coolant) in a short time. The substrate can be supported and its temperature controlled using a substrate support component, such as a pedestal. When a plasma is formed over a substrate, the plasma can dissipate a large amount of heat. The substrate support assembly quickly dissipates heat to prevent substrate overheating. The present disclosure may combine a heating element (eg, resistive heater 122 ) and a heat transfer fluid channel (eg, channel 142 ) into a body (eg, susceptor body 110 ). A gas distribution plate 130 (eg, a helium distribution layer (HDL)) may be disposed between the resistive heater 122 and the channel 142 to save energy. The gas distribution plate 130 can distribute the gas flow such that the gas pressure between the substrate 160 and the top surface of the substrate support assembly 100 is uniform (e.g., the gas distribution plate 130 distributes the gas evenly to the backside of the substrate 160), and the gas distribution plate 130 can be used As a thermal resistance plug between the resistive heater 122 and the heat transfer fluid (such as coolant), to prevent the heat transfer fluid from flowing away from the heating energy of the resistive heater 122 (for example, the gas distribution plate 130 in the channel 142 and the resistive A threshold temperature difference is generated between the heaters 122, a more reliable low-temperature coolant can be used, and a smaller heating power is used to maintain the temperature difference). The resistive heater 122 and heat transfer fluid can maintain the substrate 160 at about 200 to about 400 degrees Celsius and allow rapid heat removal when substrate processing operations (eg, radio frequency (RF), plasma, etc.) occur. Heating elements (eg, resistive heater 122 ) can be disposed proximate to the top surface of substrate support assembly 100 , and channels 142 can be disposed proximate to the bottom surface of substrate support assembly 100 (eg, with gas distribution plate 130 therebetween).

The gas distribution plate 130 can increase the distance between the resistive heater 122 and the channel 142 to provide a thermal plug. The gas distribution plate 130 may be substantially hollow to reduce heat conduction through the solid material of the gas distribution plate 130 . The material of the heating plate 120 between the resistive heater 122 and the gas distribution plate 130 can distribute heat laterally. Gas distribution plate 130 allows for a greater temperature differential between resistive heater 122 and the heat transfer fluid in channel 142 . Lower temperature heat transfer fluids are more efficient and use less energy. A small heating power is used during the idle state of the processing chamber, and the substrate support assembly 100 rejects heat within a few seconds after the processing chamber is active (eg, RF is on).

In some embodiments, heat transfer fluid flows continuously through channel 142 (e.g., during active and idle states of the process chamber, possibly without using a heat transfer fluid shut-off valve) to react more quickly to changes in temperature . In some embodiments, heat transfer fluid flows through channel 142 during an active state of the processing chamber, and does not flow through channel 142 during an idle state of the processing chamber (e.g., using a shut-off valve for the heat transfer fluid) to Conserves energy when idle. In some embodiments, heat transfer fluid is flowed through channel 142 prior to an active state of the processing chamber (eg, when a process recipe begins).

The substrate support assembly 100 includes a susceptor body 110 . The substrate support assembly 100 may include a base, such as an electrostatic chuck (ESC or E-chuck) base, that includes a base body 110 . The susceptor body 110 contains a resistive heater 122 (eg, resistive heater, resistive heater, etc.), the susceptor body 110 forms an interior volume 132 that receives a gas, and the susceptor body 110 forms a channel 142 that receives a heat transfer fluid (eg, heating and/or cooling channels). The interior volume 132 is arranged above the channel 142 . The resistive heater 122 is disposed above the interior volume 132 . The interior volume 132 is a buffer (eg, a thermal plug) between the cooling provided by the heat transfer fluid in the channel 142 and the resistive heater 122 .

In some embodiments, base body 110 has one or more plates, and each of these plates includes one or more of heater 122 , interior volume 132 , or channel 142 . In some embodiments, the heating plate 120 includes a resistive heater, the gas distribution plate 130 forms an interior volume 132 that receives the gas, and the cooling plate forms channels 142 that receive the heat transfer fluid. In some embodiments, the heating plate 120 is the top plate, the gas distribution plate 130 is the middle plate, and the cooling plate 140 is the bottom plate (eg, the top plate is on the middle plate and the middle plate is on the bottom plate).

In some embodiments, the heat transfer fluid is a synthetic organic heat transfer medium. In some embodiments, the heat transfer fluid may be used in a liquid phase in a closed forced circulation heat transfer system. In some embodiments, the heat transfer fluid can be used over an operating range (eg, about -5 to about 400 degrees Celsius) while maintaining pressure. In some embodiments, the heat transfer fluid has a boiling range above about 350 to about 400 degrees Celsius at atmospheric pressure. In some embodiments, the heat transfer fluid used does not leave deposits on the walls. In some embodiments, the heat transfer fluid has a liquid, transparent appearance at about 20 degrees Celsius. In some embodiments, the chlorine in the heat transfer fluid is less than about 10 parts per million. In some embodiments, the heat transfer fluid has a density of about 1.0 to about 1.1 (about 1.04 to about 1.05) grams per milliliter at about 20 degrees Celsius. In some embodiments, the heat transfer fluid has a viscosity of about 42 to about 52 square millimeters per second at about 20 degrees Celsius. In some embodiments, the heat transfer fluid is compatible with graphite, polytetrafluoroethylene (PTFE), and fluoroelastomers. In some embodiments, the heat transfer fluid may be heated to about 350 to about 400 degrees Celsius. In some embodiments, the heat transfer fluid may be heated to a temperature between about 200 degrees Celsius and about 400 degrees Celsius. In some embodiments, the heat transfer fluid may be heated to a temperature between about 200 and about 300 degrees Celsius. In some embodiments, the heat transfer fluid may be heated to a temperature between about 300 and about 400 degrees Celsius. In some embodiments, the heat transfer fluid is configured to maintain the susceptor body 110 within about 10 degrees Celsius during substrate processing. In some embodiments, the substrate support assembly 100 (eg, susceptor body 110 ) includes one or more resistive heaters 122 in addition to a heat transfer fluid to control the temperature of the substrate.

In some embodiments, the substrate support assembly 100 (eg, susceptor body 110 ) includes an electrostatic chuck 150 on the heated plate 120 . In some embodiments, electrostatic chuck 150 is configured to support substrate 160 .

In some embodiments, the substrate is placed (eg, fixed or electrostatically fixed) on the substrate support assembly 100 (eg, susceptor body 110 ) (eg, via an electrostatic chuck 150 ). In some embodiments, the substrate support assembly 100 maintains the substrate temperature at a predetermined temperature (eg, about 200 to about 350 degrees Celsius) via the resistive heater 122 in response to the processing chamber being idle (eg, not performing substrate processing operations). within plus or minus ten degrees of a predetermined temperature), and in response to the processing chamber being active (e.g., performing a substrate processing operation, RF on, plasma processing, etc.), the substrate support assembly 100 transfers the substrate via the heat transfer fluid in the channel 142 Maintain within plus or minus ten degrees of the predetermined temperature. The substrate support assembly 100 is configured to remove heat from the plasma source (eg, to remove heat from the substrate) during substrate processing operations.

In some embodiments, the heating plate 120 and the gas distribution plate 130 are coupled (eg, joined, fastened, welded, adhered, etc.) to each other. In some embodiments, the gas distribution plate 130 and the cooling plate 140 are coupled (eg, joined, fastened, welded, adhered, etc.) to each other. In some embodiments, the lower surface of the gas distribution plate and at least a portion of the upper surface (eg, a flat upper surface) of the cooling plate 140 form the interior volume 132 . In some embodiments, at least a portion of the upper surface of cooling plate 140 is secured (eg, bonded, fastened, welded, etc.) to at least a portion of the lower surface of gas distribution plate 130 (eg, peripheral portion, inner portion, etc.). In some embodiments, an upper surface of the cooling plate 140 and a lower surface (eg, a flat upper surface) of the gas distribution plate form the interior volume 132 (eg, are fixed to each other). In some embodiments, an upper surface of the cooling plate 140 and a lower surface (eg, a flat upper surface) of the gas distribution plate form the interior volume 132 (eg, are fixed to each other). In some embodiments, the upper surface of gas distribution plate 130 and the lower surface of heating plate 120 form interior volume 132 (eg, are fixed to each other).

In some embodiments, at least a portion of the base body 110 is made of metal substrate and ceramics. The metal substrate can be one or more of aluminum substrates, magnesium substrates, titanium substrates, cobalt substrates, and cobalt-nickel alloy substrates. The ceramic can be one or more of silicon carbide, carbon fiber, boron wire, aluminum, and the like. Ceramics can be particles, fibers, filaments and/or the like. In some embodiments, the base body 110 is about 70% by volume ceramic and about 30% by volume metal. In some embodiments, the susceptor body 110 has at least about 40% by volume ceramic (eg, at least about 50% by volume ceramic particles). In some embodiments, the base body 110 is formed by dispersing a reinforcing material, such as ceramic particles, in a metal substrate. In some embodiments, reinforcing materials are coated, such as carbon fibers coated with nickel or titanium boride, to prevent chemical reactions with the metal substrate. The metal substrate can be a monolithic material with reinforcing material embedded therein.

In some embodiments, the electrostatic chuck 150 includes a coating (eg, plasma spray, electrostatic chuck layer, aluminum oxide, one or more dielectric materials, etc.). The coating can be the upper surface of the electrostatic chuck 150 . Coating 118 may protect susceptor body 110 from substrate processing operations. In some embodiments, the corresponding coefficients of thermal expansion (CTE) of cooling plate 140, gas distribution plate 130, heating plate 120, electrostatic chuck 150, and coating 118 are within a threshold range of each other (e.g., about 10 %, about 5% or about 1%).

In some embodiments, gas distribution plate 130 (eg, helium distribution plate) is secured (eg, fastened via fasteners such as screws, bolts, etc.) to a component of base body 110 (eg, cooling plate 140 ). The gas distribution plate 130 contains an interior volume 132 (eg, channels). A gas (eg helium, argon, etc.) flows through the interior volume. Holes (eg, openings, channels) in susceptor body 110 (eg, holes in coating, holes in heating plate 120 , holes in electrostatic chuck 150 ) are aligned with one or more portions of interior volume 132 . The gas flows through the interior volume 132 and the aperture to a location above the susceptor body 110 (eg, a location below the substrate 160 ). The gas distribution plate 130 can substantially evenly distribute the gas to different locations under the substrate via the holes 119 . Substrate support assembly 100 , such as electrostatic chuck 150 , may secure substrate 160 to susceptor body 110 using an electrical voltage. The pressure provided by the gas flowing through the interior volume 132 and the holes may be less than the pressure provided by the voltage of the electrostatic chuck securing the substrate 160 to the susceptor body 110 . In some embodiments, at least a portion of the gas distribution plate 130 includes a coating (eg, plasma spray, aluminum oxide, dielectric material, etc.) that prevents corrosion during substrate processing.

In some embodiments, the substrate support assembly 100 includes a susceptor shaft 170 . The susceptor shaft 170 is arranged below the cooling plate 140 . In some embodiments, at least a portion of susceptor shaft 170 includes a coating (eg, plasma spray, aluminum oxide, dielectric material) that prevents corrosion during substrate processing. In some embodiments, at least a portion (e.g., an exterior portion) of electrostatic chuck 150, heated plate 120, gas distribution plate 130, cooling plate 140, and/or susceptor shaft 170 includes a coating (e.g., an outer portion) that prevents corrosion during substrate processing. plasma spray, alumina, dielectric materials).

The heat transfer fluid is configured to flow from the supply channel in the susceptor shaft 170 to the channel 142 in the susceptor body 110 and from the channel 142 in the susceptor body 110 to the return channel in the susceptor shaft 170 . Heat transfer fluid may flow through the supply channel, channel 142, and return channel at about 50 to about 150 liters per minute. The heat transfer fluid may be at a temperature between about 300 degrees Celsius and about 400 degrees Celsius. In some embodiments, the base shaft 170 forms supply and return channels. In some embodiments, the supply tube forms the supply channel and the return tube forms the return channel. The supply and return lines are routed through the interior volume of the base shaft 170 .

In some embodiments, the substrate support assembly 100 includes a manifold (eg, a high temperature heat transfer fluid manifold). The heat transfer fluid may flow from a heat transfer fluid supply (e.g. heat transfer fluid source, pump, valve, etc.), through a supply channel, through a first channel in the manifold, through channel 142, through a second channel in the manifold , flowing through the return channel. Heat transfer fluid from the return channel may be processed (eg, heated, cooled, filtered, increased flow rate, pumped, etc.) and provided to the supply channel. The manifold may be secured (eg, snapped, engaged, etc.) to the base body 110 (eg, cooling plate 140 ). In some embodiments, the manifold is secured to one or more of the cooling plate 140 , the gas distribution plate 130 and/or the base shaft 170 .

Gases (e.g., helium, argon, etc.) are configured to flow through gas channels in susceptor shaft 170 to interior volume 132 in gas distribution plate 130, and through susceptor shaft 110 (e.g., heated plate 120, electrostatic chuck 150, etc.) The holes in the flow to a location below the substrate 160 . In some embodiments, the base shaft 170 forms a gas channel. In some embodiments, the gas tubes form gas channels. A gas channel is routed through the interior volume of the base shaft 170 .

In some embodiments, each of the supply and return channels has an inner diameter of about 0.5 to about 1.5 inches (eg, about 1 inch), and the gas channel has an inner diameter of about 0.2 to about 0.3 inches (eg, about 0.25 inches). the inside diameter of.

The processing chamber may be used to perform substrate processing operations at elevated temperatures in the processing chamber. The substrate support assembly 100 can heat the susceptor body 110 to a temperature above room temperature and below the temperature of the substrate processing operation. In some examples, the substrate processing operation is performed at a temperature that is higher than the temperature of the susceptor body 110 . For example, substrate processing operations may be greater than 350 degrees Celsius, and resistive heater 122 may heat susceptor body 110 to approximately 350 degrees Celsius. During an idle state of the processing chamber (eg, not performing substrate processing operations), the resistive heater 122 may heat the substrate to a temperature of about 300 to about 400 degrees Celsius (eg, about 350 degrees Celsius). During an active state of the processing chamber (eg, performing a substrate processing operation), the heat transfer fluid in channel 142 may cool the substrate to a temperature of about 300 to about 400 degrees Celsius (eg, about 350 degrees Celsius).

In some embodiments, the controller 109 controls the substrate support assembly 100, the processing chamber, the robot, one or more control valves, and/or various aspects of the substrate processing system. The controller 109 is and/or includes a computing device, such as a personal computer, a server computer, a programmable logic controller (programmable logic controller; PLC), a microcontroller, and the like. Controller 109 includes one or more processing devices, which in some embodiments are general-purpose processing devices such as microprocessors, central processing units, or the like. More specifically, in some embodiments, the processing device is a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (very long instruction word; VLIW) A microprocessor or processor that executes other instruction sets or that implements a combination of instruction sets. In some embodiments, the processing device is one or more special-purpose processing devices, such as application specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), digital signal processors ( digital signal processor; DSP), network processor or similar. In some embodiments, the controller 109 may include data storage devices (such as one or more disk drives and/or solid state drives), main memory, static memory, network interface and/or other components. In some embodiments, the controller 109 executes instructions to perform any one or more of the methods or processes described herein. The instructions are stored in a computer-readable storage medium, which includes main memory, static memory, secondary storage, and/or processing device (during execution of the instructions). In some embodiments, controller 109 is used to control one or more parameters of substrate support assembly 100 (eg, temperature, pressure, flow rate, voltage, etc.). The controller 109 receives sensor data from one or more sensors associated with the substrate support assembly 100 .

In some embodiments, one or more sensors provide sensor data to the controller 109 . The sensors may include one or more of thermocouple sensors, thermal sensors, temperature sensors, pressure sensors, flow rate sensors, voltage sensors, and/or the like.

In some embodiments, the controller 109 receives sensor data related to the temperature of the substrate (eg, the temperature of the susceptor body 110 ) from a sensor (eg, thermocouple, thermal sensor, temperature sensor). In response to the temperature of the substrate reaching a first threshold temperature (eg, greater than about 350 degrees Celsius), controller 109 prevents resistive heater 122 from heating heating plate 120 and flows a heat transfer fluid through channel 142 to cool the substrate. In response to the temperature reaching a second threshold temperature (eg, less than about 350 degrees Celsius), the controller 109 causes the resistive heater 122 to heat the heating plate 120 to heat the substrate. In some embodiments, the controller 109 causes a heat transfer fluid to flow through the channel 142 (eg, by actuating a shut-off valve that is fluidly coupled to the substrate support assembly) during the idle state and the active state of the processing chamber. In some embodiments, the controller 109 causes (eg, by actuating a shut-off valve) heat transfer fluid to flow through the channel 142 during the active state of the processing chamber, and the controller 109 prevents ( Heat transfer fluid flows through channel 142 by actuating the shutoff valve.

In some embodiments, the controller 109 receives sensor data related to gas pressure associated with the gas distribution plate 130 from sensors (eg, pressure sensors, flow rate sensors, etc.). In some embodiments, the sensor data is associated with a gas inlet (eg, of a gas channel in susceptor shaft 170 ). In some embodiments, sensor data is associated with interior volume 132 . In some embodiments, the sensor data is associated with a location disposed on the base body 110 under the substrate 160 . The controller 109 can control the gas at a threshold pressure value. In some embodiments, controller 109 receives a pressure value associated with the electrostatic clamping force securing substrate 160 to susceptor body 110 . In some embodiments, the threshold pressure value of the gas is determined based on pressure data (eg, electrostatic clamping force).

In some embodiments, the system includes a substrate support assembly 100, a controller 109, one or more sensors, one or more fluid temperature conditioning devices (e.g., fluid heaters, fluid coolers, etc.), and one or more flow Rate regulating devices (e.g. pumps, valves, recirculation pumps, etc.).

In response to actuating (e.g., opening, actuating by controller 109) the substrate processing apparatus and/or in response to controller 109 receiving a sense indicating that the processing chamber has reached a first threshold temperature (e.g., below 350 degrees Celsius in an idle state) The controller 109 makes the resistance heater 122 heat the heating plate 120 according to the data of the detector (such as temperature data).

In response to actuating (e.g., opening, actuating by controller 109) the substrate processing apparatus and/or in response to controller 109 receiving a sensor indicating that the processing chamber has reached a second threshold temperature (e.g., greater than 350 degrees Celsius in an active state) Based on sensor data (such as temperature data), the controller 109 causes the flow rate adjustment device (such as a pump, recirculation pump, etc.) to make the heat transfer fluid flow through the supply channel, channel 142 and return channel.

In some embodiments, the controller 109 further enables the fluid temperature adjustment device (such as a heater, cooler, condenser, etc.) to adjust the temperature of the heat transfer fluid (for example, the heater heats the recirculated heat transfer fluid to about 200 degrees Celsius and temperatures between about 400 degrees).

In response to placing the substrate 160 on the substrate support assembly 100 and/or in response to actuating the substrate processing apparatus, the controller 109 causes a flow rate regulating device (e.g., valve, pump) to pass a gas (e.g., helium) through the gas channel, interior volume 132 and flow through the holes to the upper surface of the substrate support assembly 100 (eg, under the substrate).

The controller controls the temperature of the substrate by controlling the resistive heater 122 and/or the heat transfer fluid in the channel 142 to heat the substrate during the idle state and cool the substrate during the active state. The controller 109 can control the temperature of the substrate within plus or minus ten degrees (eg, about 340 to about 360 degrees Celsius).

2A-2C illustrate components of a substrate support assembly (eg, substrate support assembly 100 of FIG. 1 , susceptor body 110 of FIG. 1 ) in accordance with certain embodiments. FIG. 2A illustrates a cross-sectional view of a heating plate 220 (eg, heating plate 120 of FIG. 1 ), FIG. 2B illustrates a view (eg, bottom view) of a gas distribution plate 230 (eg, the gas distribution plate of FIG. 1 ), and FIG. 2C illustrates a cross-sectional view of a cooling plate 240 , such as cooling plate 140 of FIG. 1 . Features in FIGS. 2A-2C having similar reference numerals to those in FIG. 1 may have similar or identical functions and/or structures to those in FIG. 1 .

Referring to FIG. 2A , the heating plate 220 has one or more resistive heaters 222 . In some embodiments, a controller (eg, controller 109 of FIG. 1 ) collectively and/or individually controls resistive heaters 222 based on temperature data from one or more sensors (eg, thermocouples). The heating plate 220 has one or more holes 224 (eg, channels, openings) extending between the upper and lower surfaces of the heating plate 220 . The holes 224 are configured to pass a gas (eg, helium, argon, etc.) from the interior volume 232 of the gas distribution plate 230 to a location between the substrate and the upper surface of the substrate support assembly.

Referring to FIG. 2B, the lower surface of the gas distribution plate 230 may form one or more interior volumes 232 that receive a gas (eg, helium, argon, etc.). An upper surface (eg, a flat upper surface) of the gas distribution plate 230 may be fixed (eg, bonded) to a lower surface (eg, a flat lower surface) of the heating plate 220 . At least a portion of the lower surface of the gas distribution plate 230 may be secured (eg, fastened) to the upper surface (eg, flat upper surface) of the cooling plate 240 . In some embodiments, the upper surface of cooling plate 240 and the lower surface of gas distribution plate 230 surround interior volume 232 (e.g., gas distribution plate 230 provides the upper surface of interior volume 232 and cooling plate 240 provides the lower surface of interior volume 232) .

One or more adapters (eg, a gas plume inlet) may be configured to couple the interior volume 232 to the gas channel of a base shaft (eg, base shaft 170 of FIG. 1 ). Internal volume 232 is aligned with aperture 224 in the susceptor body to provide gas to a location under the substrate.

In some embodiments, the gas distribution plate 230 includes an upper structure 234 , a perimeter structure 236 , an inner structure 238 and one or more support structures 239 . The upper structure 234, perimeter structure 236, inner structure 238, and support structure 239 may be one continuous component (eg, formed by molding and/or by removing material). The upper structure 234 may have a planar upper surface (e.g., configured to be secured to the bottom surface of the heating plate 220), and may have couplings (e.g., be part of, bonded to) the peripheral structure 236, the inner structure 238, and the support structure 239. bottom surface. Internal structure 238 may be coupled to a gas channel in the base shaft and may provide gas to internal volume 232 . The interior volume 232 may be sealed from the environment at the top by the superstructure 234 , at the sides by the perimeter structure 236 , in the middle by the interior structure 238 , and at the bottom by the upper surface of the cooling plate 240 . Support structure 239 may extend partially between perimeter structure 236 and inner structure 238 . Perimeter structure 236 , inner structure 238 , and/or one or more support structures 239 may extend from upper structure 234 to an upper surface of cooling plate 240 (eg, in response to gas distribution plate 230 being coupled to cooling plate 240 ). The support structure 239 prevents deformation of the gas distribution plate 230 (eg, prevents changes in height of the interior volume 232).

The gas distribution plate 230 is configured to distribute the gas to provide a substantially uniform gas pressure between the electrostatic chuck and the substrate (e.g., within +/- 10%, +/- 5%, and/or the like at various locations) Inside).

The gas distribution plate (eg, of superstructure 234 ) may have a solid area (eg, area of perimeter structure 236 , inner structure 238 , and support structure 239 ) as a percentage of the total area of up to 10% or up to 5%.

For example in FIG. 2C , cooling plate 240 forms one or more channels 242 that receive a heat transfer fluid to cool a susceptor body (such as susceptor body 110 of FIG. 1 ) and are disposed on the base during an active state of the processing chamber. Substrate on the base.

3A-3C illustrate components of a substrate support assembly, such as the substrate support assembly 100 of FIG. 1 , according to certain embodiments. Figure 3A is a side view of a susceptor shaft 370 (such as susceptor shaft 170 of Figure 1), Figure 3B is a bottom view of the susceptor shaft 370, and Figure 4C is a substrate support assembly 300 without the susceptor shaft 370 side view. Features with similar reference numerals to features in other figures may include the same or similar structure and/or functionality.

Base shaft 370 includes an elongated lower portion and a flanged upper portion. The flanged upper portion is configured to be secured (eg, snapped) to a cooling plate (eg, cooling plate 240 of FIG. 2C , cooling plate 140 of FIG. 1 ). The gas distribution plate 330 (such as the gas distribution plate 230 of FIG. 2B, the gas distribution plate 130 of FIG. 1) is arranged on the cooling plate 340, and the heating plate 320 (such as the heating plate The heating plate 120) is arranged on the gas distribution plate 330. An electrostatic chuck 350 , such as electrostatic chuck 150 of FIG. 1 , may be disposed on heated plate 320 .

A supply channel 372 , a return channel 374 and a gas channel 376 are arranged in the base shaft 370 . In some embodiments, supply channel 372 , return channel 374 , and gas channel 376 are formed by tubing routed through base shaft 370 .

FIG. 4 illustrates a method 400 of using a substrate support assembly in accordance with certain embodiments. In some embodiments, a controller (eg, controller 109 of FIG. 1 ) performs one or more of the operations of method 400 . Although shown in a particular sequence or sequence, the order of the processes may be modified unless otherwise indicated. Thus, the illustrated embodiments should be considered as examples only, the illustrated processes may be performed in a different order, and some processes may be performed in parallel. Additionally, one or more processes may be omitted in various embodiments. As such, not all processes are required for every embodiment.

Referring to method 400 of FIG. 4, at block 402, a gas (e.g., helium, argon, etc.) is passed through the gas passages in the susceptor shaft, through the interior volume of the gas distribution plate, through the cooling plate and through the gas channels in the electrostatic chuck. The holes flow to a location under the substrate. The controller may provide gas flow via a flow rate regulating device (eg, pump, valve, etc.). The gas provides pressure on the lower surface of the substrate. In some embodiments, the peripheral portion of the substrate is substantially sealed from the susceptor body such that the gas is substantially enclosed under the substrate. The controller may provide airflow based on sensor data (eg, pressure sensor data, flow rate data, etc.). The controller may cause the gas pressure under the substrate to be less than the inspection pressure of the susceptor body (eg, electrostatic clamping pressure).

In some embodiments, at block 404, sensor data related to a substrate disposed on a substrate support assembly is received. In some embodiments, sensor data is related to the temperature of the substrate and/or submount. The controller may receive sensor data from a temperature sensor such as a thermocouple.

At block 406, it is determined that the processing chamber is in an idle state (eg, based on sensor data). In some embodiments, in response to determining that the temperature of the substrate and/or susceptor body reaches a first threshold temperature (e.g., about 350 degrees Celsius or less), the controller may determine that the processing chamber is in an idle state (e.g., not performing substrate processing). operate). In some embodiments, the controller receives information indicating that the processing chamber is not performing a substrate processing operation. In some embodiments, a controller controls the processing chamber.

At block 408, in response to the processing chamber being in an idle state, a resistive heater disposed in the heating plate is caused to heat the heating plate (eg, to heat a substrate disposed on the susceptor body.) During the idle state, the resistive heating The heater causes the heating plate to have a temperature (eg, about 350 degrees Celsius) lower than the substrate processing operating temperature (eg, between about 350 and 400 degrees Celsius) to heat the substrate to a temperature closer to the substrate processing operating temperature than to room temperature (e.g. about 350 degrees Celsius) and maintained at that temperature.

In some embodiments, the susceptor body may be heated (eg, via a resistive heater) to a temperature between about 300 and about 400 degrees Celsius (eg, about 350 degrees Celsius) prior to placing the substrate on the susceptor body . In response to placing the substrate on the base body, the substrate is heated (eg, via heat conduction from the base body) to a temperature between about 300 and about 400 degrees Celsius (eg, about 350 degrees Celsius).

At block 410, it is determined that the processing chamber is active (eg, based on sensor data). The controller may determine that the processing chamber is active based on sensor data related to the temperature of the substrate and/or susceptor body. The controller can receive data indicating that the processing chamber is performing a substrate processing operation. The controller may have data that instructs the processing chamber when to perform substrate processing operations. The controller can cause the processing chamber to perform substrate processing operations.

At block 412, heating of the heating plate by the resistive heater is prevented in response to the process chamber being active. In some embodiments, the heating plate includes a plurality of resistive heaters (eg, forming a hot zone). The controller can cause certain resistive heaters to heat to a certain temperature (for example, at a certain voltage) and can prevent certain resistive heaters from heating the heating plate based on sensor data related to various locations on the susceptor body .

At block 414 , in response to the process chamber being active, a heat transfer fluid is flowed through channels formed by the susceptor body (eg, channels formed by a cooling plate) to cool the substrate. The controller can adjust the temperature (eg cooling) of the heat transfer fluid flowing through the channel of the base body via the fluid temperature adjusting device (eg cooler, condenser), so as to cool the substrate. The controller can flow a heat transfer fluid (e.g., at about 70 liters per minute) through the base body via a flow rate adjustment device (e.g., a pump, recirculation pump, and/or valve) to cool the base body to about 300°C and A temperature between about 400 degrees Celsius (eg about 350 degrees Celsius). The controller can cause the heat transfer fluid to flow through the base body at a relatively low temperature (eg, about 300 to about 350 degrees Celsius). The heat transfer fluid can absorb additional heat from the substrate processing operation to maintain the substrate (e.g., and susceptor body) at a threshold temperature (e.g., plus or minus 10 degrees Celsius) of the idle temperature of the substrate on the susceptor body (e.g., about 350 degrees Celsius). Spend).

In some embodiments, the controller causes the heat transfer fluid to flow through the channels during an active state and an inactive state of the processing chamber.

In some embodiments, each of the operations of method 400 is performed while maintaining a sealed environment in the processing chamber. In some embodiments, the predetermined temperature of the heat transfer fluid, susceptor body, and/or substrate is adjusted based on the temperature of the substrate processing operation. In some embodiments, for each predetermined temperature of the heat transfer fluid, susceptor body, and/or substrate associated with the corresponding substrate processing operation, the heat transfer fluid, susceptor body, and /or the temperature of the substrate is maintained at a threshold temperature (eg, plus or minus 10 degrees Celsius).

Unless specifically stated otherwise, terms such as "cause," "determine," "heat," "cool," "flow," "receive," "transmit," "generate," or the like mean The act or process of a computer system that manipulates data represented as physical (electronic) quantities in computer system registers and memory and converts it into data stored in computer system memory or registers or other such information Data similarly expressed as physical quantities in a , transmission or display device. Moreover, the terms "first", "second", "third", "fourth", etc. used herein are used as labels to distinguish different elements and have no sequential meaning relative to their numerical symbols.

Examples described herein also relate to apparatus for performing the methods described herein. In some embodiments, the apparatus is specially constructed for performing the methods described herein, or the apparatus comprises a general purpose computer system selectively programmed by a computer program stored in the computer system. In some embodiments, such a computer program is stored on a computer-readable tangible storage medium.

The methods and illustrative examples described herein are not invariably related to any particular computer or other device. Various general purpose systems may be used in accordance with the teachings described herein, or more specialized apparatus may be constructed to perform the methods described herein and/or their individual functions, routines, subroutines or operations. The above description sets forth examples of structures for a variety of these systems.

The foregoing descriptions set forth numerous specific details, such as examples of particular systems, components, methods, etc., in order to provide a good understanding of several embodiments of the present disclosure. It will be apparent, however, to one skilled in the art that at least some embodiments of the disclosure may be practiced without these specific details. In other instances, well-known components or methods have not been described in detail, but have been eliminated in a simple block diagram format in order to avoid unnecessarily obscuring the disclosure. As such, the specific details set forth are illustrative only. Particular implementations may vary from these illustrative details and still be within the scope of the present disclosure.

As used herein, the terms "above", "under", "between", "disposed on", "supporting" and "on" refer to the relative position of a layer or component of material with respect to other layers or components. For example, another layer disposed on, above or below one layer may be in direct contact with another layer or there may be one or more intervening layers. Furthermore, a layer disposed between two layers may be in direct contact with the two layers or may have one or more intervening layers. Similarly, a feature disposed between two features can be in direct contact with an adjacent feature or can have one or more intervening layers unless expressly stated otherwise.

Reference throughout this specification to "one embodiment" or "an embodiment" means that at least one embodiment includes a particular feature, structure or characteristic described in connection with the embodiment. Thus, appearances of the phrase "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily referring to the same embodiment of the disclosure. Additionally, the term "or" is meant to be an inclusive "or" rather than an exclusive "or". When the term "about" or "approximately" is used herein, it means within ±10% of the stated nominal value.

Although the operations of the methods herein are shown and described in a particular order, the order of operations of each method can be altered such that certain operations are performed in reverse order, such that certain operations are performed at least in part concurrently with other operations. In another embodiment, instructions or sub-operations of different operations are performed intermittently and/or alternately.

It should be understood that the above description is intended to be illustrative, not restrictive. Many other embodiments will be apparent to those of ordinary skill in the art upon reading and understanding the above description. The scope of the disclosure should therefore be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

100: substrate support assembly 109: Controller 110: base body 120: heating plate 122: Resistive heater 130: gas distribution plate 132: Internal volume 140: cooling plate 142: channel 150: electrostatic chuck 160: Substrate 170: base shaft 220: heating plate 222: Resistive heater 224: hole 230: gas distribution plate 232: Internal volume 234: Superstructure 236: Surrounding structure 238: Internal structure 239: Support structure 240: cooling plate 242: channel 300: substrate support assembly 320: heating plate 330: gas distribution plate 340: cooling plate 350: electrostatic chuck 370: base shaft 372: Supply channel 374: return channel 376: gas channel 400: method 402: block 404: block 406: block 408: block 410: block 412: square 414: block

The present disclosure is illustrated by way of example and not limited by the accompanying drawings, in which like symbols indicate similar elements. It should be noted that different references to "an" or "one" embodiment in this disclosure are not necessarily to the same embodiment, and such references mean at least one.

Figure 1 illustrates a substrate support assembly in accordance with certain embodiments.

Figures 2A-2C illustrate components of a substrate support assembly according to certain embodiments.

Figures 3A-3C illustrate components of a substrate support assembly according to certain embodiments.

Figure 4 illustrates a method of using a substrate support assembly in accordance with certain embodiments.

Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

100: substrate support assembly

109: Controller

110: base body

120: heating plate

122: Resistive heater

130: gas distribution plate

132: Internal volume

140: cooling plate

142: channel

150: electrostatic chuck

160: Substrate

170: base shaft

Claims (20)

A substrate support assembly comprising: a cooling plate forming one or more channels configured to receive a heat transfer fluid; a gas distribution plate disposed on the cooling plate, wherein the gas distribution plate forms an internal volume configured to receive a gas; a heating plate arranged on the gas distribution plate, wherein the heating plate comprises a resistive heater; and An electrostatic chuck is disposed on the heating plate, wherein the electrostatic chuck is configured to support a substrate in a processing chamber. The substrate support assembly of claim 1, further comprising a shaft disposed under the cooling plate, wherein the gas is configured to flow through a gas channel in the shaft to the interior volume of the gas distribution plate, through Flow through an opening formed in the heating plate and the electrostatic chuck to a location between the substrate and the electrostatic chuck. The substrate support assembly of claim 1, wherein the heat transfer fluid is capable of cooling the substrate support assembly at about 200 degrees Celsius to about 300 degrees Celsius. The substrate support assembly of claim 1, wherein the resistive heater can heat the heating plate to about 300 degrees Celsius to about 400 degrees Celsius. The substrate support assembly of claim 1, wherein the gas distribution plate is configured to distribute the gas to provide a substantially uniform gas pressure between the electrostatic chuck and the substrate. The substrate support assembly of claim 1, wherein the electrostatic chuck comprises a coating, wherein the cooling plate, the gas distribution plate, the heating plate, the electrostatic chuck, and the coating have a corresponding coefficient of thermal expansion ( CTE) are within a threshold range of each other. 2. The substrate support assembly of claim 1, wherein the gas distribution plate has a solid area to total area ratio of up to about ten percent. The substrate support assembly of claim 1, wherein the heat transfer fluid can flow through the one or more channels during an idle state of the processing chamber and during an active state of the processing chamber. The substrate support assembly of claim 1, wherein the substrate support assembly is fluidly coupled to a shutoff valve, wherein the shutoff valve is configured to be actuated to provide during an active state of the processing chamber The flow of the heat transfer fluid through the one or more channels is prevented during an idle state of the processing chamber. The substrate support assembly of claim 1, wherein the substrate support assembly maintains the substrate at a substantially constant temperature during an idle state of the processing chamber and during an active state of the processing chamber. The substrate support assembly of claim 1, wherein the resistive heater heats the substrate support assembly to about 300 to about 400 degrees Celsius during an idle state of the processing chamber, wherein the heat transfer fluid is in the process The substrate support assembly is cooled to about 300 to about 400 degrees Celsius during an active state of the chamber. The substrate support assembly of claim 1, wherein the gas distribution plate provides a temperature gradient between the resistive heater and the heat transfer fluid of about 50 degrees Celsius to about 200 degrees Celsius. A system comprising: a substrate support assembly disposed in a processing chamber, the substrate support assembly comprising a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate; and a controller which: flowing a heat transfer fluid through one or more channels formed by the cooling plate; flowing gas through the gas distribution plate to openings formed in the heating plate, and from the openings in the heating plate to between an upper surface of the substrate support assembly and a substrate disposed on the substrate support assembly a position at; and A resistive heater disposed in the heating plate is caused to heat the heating plate. The system of claim 13, wherein the controller will further: determining whether the processing chamber is in an idle state or an active state; and preventing the resistive heater from heating the heating plate in response to determining that the processing chamber is in the active state, wherein the controller causes the resistive heater to heat the heating plate in response to determining that the processing chamber is in the idle state heating. The system of claim 13, wherein the controller further causes the heat transfer fluid to flow through the one or more channels during an idle state of the processing chamber and during an active state of the processing chamber. The system of claim 13, further comprising a shutoff valve fluidly coupled to the substrate support assembly, wherein the controller further actuates the shutoff valve to during an active state of the processing chamber Flow of the heat transfer fluid through the one or more channels is provided and the flow of the heat transfer fluid through the one or more channels is prevented during an idle state of the processing chamber. A method comprising the steps of: flowing heat transfer fluid through one or more channels formed by a cooling plate of a substrate support assembly; causing gas to flow through a gas distribution plate of the substrate support assembly disposed on the cooling plate, through openings formed in a heating plate of the substrate support assembly disposed on the cooling plate, and to the substrate support assembly a position between an upper surface of the substrate support assembly and a substrate in a processing chamber on the substrate support assembly; and A resistive heater disposed in the heating plate is caused to heat the heating plate in response to the processing chamber being in an idle state. The method of claim 17, wherein the heat transfer fluid is caused to flow through the one or more channels in response to the processing chamber being in an active state. The method of claim 17, further comprising the step of preventing the resistive heater from heating the heating plate in response to the processing chamber being in an active state. The method as described in claim 17, further comprising the following steps: receiving temperature data from a sensor associated with the heating plate; and Whether the processing chamber is in the idle state or an active state is determined based on the temperature data.