JPH1154559A - Device and method for bonding work with bump - Google Patents
Device and method for bonding work with bumpInfo
- Publication number
- JPH1154559A JPH1154559A JP9202739A JP20273997A JPH1154559A JP H1154559 A JPH1154559 A JP H1154559A JP 9202739 A JP9202739 A JP 9202739A JP 20273997 A JP20273997 A JP 20273997A JP H1154559 A JPH1154559 A JP H1154559A
- Authority
- JP
- Japan
- Prior art keywords
- work
- bump
- bonding
- bumps
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、バンプ付きワーク
のバンプをワークのパッドにボンディングするバンプ付
きワークのボンディング装置およびボンディング方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding apparatus and a bonding method for a work with a bump for bonding a bump of the work with a bump to a pad of the work.
【０００２】[0002]
【従来の技術】近年、電子部品として、バンプ付きワー
クが多用されるようになってきている。以下、従来のバ
ンプ付きワークのボンディング構造について説明する。2. Description of the Related Art In recent years, bumped works have been frequently used as electronic components. Hereinafter, a conventional bonding structure of a work with a bump will be described.
【０００３】図１０は、従来の基板にボンディングされ
たバンプ付きワークの側面図である。１はワークとして
の基板であり、その上面にはパッド２が形成されてい
る。３はバンプ付きワークとしてのチップであり、その
下面に形成されたバンプ４がパッド２に半田部５により
ボンディングされている。このボンディングは、基板１
上にボンドとしての樹脂６を塗布した後、バンプ４をパ
ッド２上に形成された半田部５上に搭載し、半田部５を
加熱・溶融・固化させるとともに、樹脂６を熱硬化させ
ることにより行われる。FIG. 10 is a side view of a conventional work with bumps bonded to a substrate. Reference numeral 1 denotes a substrate as a work, and a pad 2 is formed on an upper surface thereof. Reference numeral 3 denotes a chip as a work with bumps, and bumps 4 formed on the lower surface thereof are bonded to pads 2 by solder portions 5. This bonding is performed on the substrate 1
After applying a resin 6 as a bond thereon, the bumps 4 are mounted on the solder portions 5 formed on the pads 2, and the solder portions 5 are heated, melted and solidified, and the resin 6 is thermally cured. Done.
【０００４】バンプ付きワーク３を基板１にボンディン
グした後、バンプ４がパッド２に正しくボンディングさ
れているか否かの導通検査が行われる。この導通検査
は、テスター８のプローブ９を基板１のパッド１０に当
て、チップ３に電流を流すことにより行われる。そして
良品であれば、基板１は次の工程へ送られる。また不良
の場合には、次のようなリペア作業が行われていた。す
なわち、基板１を加熱炉へ送って再加熱することにより
半田部５を再び溶融させ、バンプ付きワーク３を基板１
から分離する。そして互いに分離された基板１やバンプ
付きワーク３の半田付け部分は補修され、再使用され
る。勿論、安価な基板１やバンプ付きワーク３の場合に
は、上記した分離や補修を行わずに、そのまま不良品と
して廃棄される場合もある。After bonding the work 3 with bumps to the substrate 1, a continuity test is performed to determine whether the bumps 4 are correctly bonded to the pads 2. This continuity test is performed by applying the probe 9 of the tester 8 to the pad 10 of the substrate 1 and applying a current to the chip 3. If it is a non-defective product, the substrate 1 is sent to the next step. In the case of failure, the following repair work was performed. That is, the solder portion 5 is melted again by sending the substrate 1 to a heating furnace and reheating, and the work 3 with bumps is
Separate from Then, the soldered portions of the substrate 1 and the work 3 with bumps separated from each other are repaired and reused. Of course, in the case of the inexpensive substrate 1 or the work 3 with bumps, there is a case where the substrate 1 is discarded as a defective product without performing the above separation and repair.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上記従来
のリペア作業は、一旦固化した半田部５を溶融させるた
めに再加熱するので、チップ３がこの再加熱により熱ダ
メージを受けやすいという問題点があった。殊に基板１
に、このチップ３以外の他の電子部品が実装されている
場合には、これらの電子部品も再加熱により熱ダメージ
を受けやすかった。また樹脂６が硬化した後で、テスタ
ー８による導通検査を行っていたため、リペア作業を行
う際には硬化した樹脂６も基板１やチップ３から剥離せ
ねばならないため、この剥離作業が甚だ面倒であるとい
う問題点があった。However, in the above-mentioned conventional repair work, since the solder portion 5 once solidified is reheated in order to melt it, there is a problem that the chip 3 is easily damaged by the reheating. Was. Especially substrate 1
In the case where electronic components other than the chip 3 are mounted, these electronic components are also easily damaged by reheating. After the resin 6 is cured, the continuity test is performed by the tester 8. Therefore, when the repair work is performed, the cured resin 6 must also be peeled from the substrate 1 or the chip 3, and this peeling work is extremely troublesome. There was a problem.
【０００６】したがって本発明は、バンプ付きワークを
基板などのワークにボンディングした後の導通検査で不
良の場合のリペア作業を簡単に行えるバンプ付きワーク
のボンディング装置およびボンディング方法を提供する
ことを目的とする。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a bonding apparatus and a bonding method for a work with bumps, which can easily perform a repair operation in the case of failure in a conduction test after bonding the work with bumps to a work such as a substrate. I do.
【０００７】[0007]
【課題を解決するための手段】請求項１のバンプ付きワ
ークのボンディング装置は、ワークを位置決めする位置
決め部と、ワークの上面に樹脂を塗布する塗布部と、ワ
ークにバンプ付きワークをボンディングするボンディン
グヘッドと、ボンディングヘッドにバンプ付きワークを
供給するワーク供給部とを備え、前記ボンディングヘッ
ドに装着されたボンディングツールが、バンプ付きワー
クを真空吸着する吸着孔と、バンプ付きワークを加熱す
る加熱手段と、前記吸着孔の周囲にバンプ付きワークの
バンプの配列に対応して形成されバンプ付きワークの上
面に当接する突起部を備え、前記加熱手段からの熱を前
記突起部を介してバンプ付きワークのバンプ部に集中的
に伝達するようにした。According to a first aspect of the present invention, there is provided a bonding apparatus for a workpiece with a bump, a positioning section for positioning the workpiece, a coating section for coating a resin on an upper surface of the workpiece, and a bonding section for bonding the workpiece with a bump to the workpiece. A head, a work supply unit for supplying a work with bumps to the bonding head, a bonding tool mounted on the bonding head, a suction hole for vacuum suctioning the work with bumps, and heating means for heating the work with bumps. A projection formed around the suction hole and corresponding to the arrangement of the bumps of the bumped work, and contacting the upper surface of the bumped work. Heat from the heating means is supplied to the bumped work via the projection. Intense transmission to the bumps.
【０００８】請求項２のバンプ付きワークのボンディン
グ方法は、ワークの上面に樹脂を塗布する工程と、ボン
ディングツールにバンプ付きワークを保持させてバンプ
付きワークのバンプを前記ワークのパッドに着地させる
工程と、ボンディングツールに設けられた加熱手段によ
って前記パッド上の半田部を溶融させて前記バンプを前
記パッド上にボンディングし、且つ互いに異種金属であ
る前記バンプと前記半田部の合金層を前記バンプの表面
に生じさせる工程と、前記樹脂が未硬化の状態で前記バ
ンプと前記パッドの導通検査を行う工程とを含む。According to a second aspect of the present invention, there is provided a method of bonding a work with a bump, the step of applying a resin to the upper surface of the work, and the step of holding the work with a bump by a bonding tool and landing the bump of the work with a bump on a pad of the work. Melting the solder portion on the pad by a heating means provided in a bonding tool to bond the bump to the pad, and forming an alloy layer of the bump and the solder portion, which are different metals from each other, on the bump. Forming a bump on the surface; and performing a continuity test between the bump and the pad in a state where the resin is not cured.
【０００９】[0009]
【発明の実施の形態】本発明によれば、ボンディングツ
ールの加熱手段からの熱をバンプ付きワークのバンプ部
に集中的に伝達させ、ワークのパッド上の半田部を溶融
させて前記バンプを前記パッドにボンディングすること
により、ワークの上面に塗布された接合用の樹脂が未硬
化の状態で前記パッドと前記バンプの導通検査を行うこ
とができ、したがって、導通検査の結果が不良の場合に
はバンプ付きワークをワークから簡単に分離できる。According to the present invention, heat from a heating means of a bonding tool is intensively transmitted to a bump portion of a work having a bump, and a solder portion on a pad of the work is melted to form the bump. By bonding to the pad, the continuity test between the pad and the bump can be performed in a state where the bonding resin applied on the upper surface of the work is uncured, and therefore, when the result of the continuity test is defective, The work with bump can be easily separated from the work.
【００１０】次に、本発明の一実施の形態を図面を参照
して説明する。図１は本発明の一実施の形態のバンプ付
きワークのボンディング装置の斜視図、図２は同バンプ
付きワークのボンディングツールの側断面図、図３、図
４、図５、図６、図７、図８、図９は同バンプ付きワー
クのボンディング工程図である。Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of a bonding apparatus for a work with bumps according to an embodiment of the present invention, FIG. 2 is a side sectional view of a bonding tool for the work with bumps, FIG. 3, FIG. 4, FIG. 8 and 9 are views showing a bonding process of the work with bumps.
【００１１】まず、図１を参照してバンプ付きワークの
ボンディング装置の全体構造を説明する。図１におい
て、基台１１上には可動テーブル１２が配設されてい
る。可動テーブル１２は、Ｘ軸モータ１３およびＹ軸モ
ータ１４を備えている。可動テーブル１２上にはワーク
である基板１５およびバンプ付きワークであるチップ１
６の供給部１７が配設されている。First, the overall structure of a bonding apparatus for a work with bumps will be described with reference to FIG. In FIG. 1, a movable table 12 is provided on a base 11. The movable table 12 has an X-axis motor 13 and a Y-axis motor 14. On the movable table 12, a substrate 15 as a work and a chip 1 as a work with bumps
Six supply units 17 are provided.
【００１２】基台１１上には、フレーム１８が立設され
ている。フレーム１８の上部には、ボンディングヘッド
の昇降テーブル１９及び樹脂塗布用ディスペンサの昇降
テーブル２０が装着されている。昇降テーブル１９、２
０の下端部にはそれぞれボンディングヘッド２１、ディ
スペンサ２２が装着されている。A frame 18 stands on the base 11. An elevating table 19 of a bonding head and an elevating table 20 of a resin application dispenser are mounted on an upper portion of the frame 18. Lifting table 19,2
A bonding head 21 and a dispenser 22 are attached to the lower ends of 0, respectively.
【００１３】昇降テーブル２０が駆動するとディスペン
サ２２は上下動し、基板１５上にバンプ付きワーク１６
の接着用の樹脂３６を塗布する。また、昇降テーブル１
９が駆動するとボンディングヘッド２１は上下動し、ボ
ンディングヘッド２１の先端部に装着されたボンディン
グツール２３によりチップ１６を真空吸着する。ボンデ
ィングヘッド２１の上下動と、可動テーブル１２の水平
移動を組み合わせることにより、ボンディングヘッド２
１は供給部１７よりチップ１６を真空吸着してピックア
ップし、チップ１６を樹脂３６が塗布された基板１５上
にボンディングする。When the lifting table 20 is driven, the dispenser 22 moves up and down, and the work 16 with bumps
Is applied. In addition, lifting table 1
When the bonding head 9 is driven, the bonding head 21 moves up and down, and the chip 16 is vacuum-adsorbed by the bonding tool 23 mounted on the tip of the bonding head 21. By combining the vertical movement of the bonding head 21 and the horizontal movement of the movable table 12, the bonding head 2
1 picks up the chip 16 by vacuum suction from the supply unit 17 and bonds the chip 16 to the substrate 15 on which the resin 36 is applied.
【００１４】次に、図２を参照してボンディングツール
２３の構造について説明する。図２においてボンディン
グツール２３はブロック２６と吸着ツール２４より成
る。吸着ツール２４の下面には、突起部２４ａが設けら
れている。突起部２４ａは吸着されるチップ１６のバン
プ１６ａ（図４参照）の配列に対応した位置に設けられ
ており、吸着ツール２４は、チップ１６の品種に応じて
複数のものが交換して使用される。吸着ツール２４の中
央部には、上下方向に貫通した吸引孔２５が設けられて
いる。吸引孔２５から空気を吸引することにより、吸着
ツール２４は突起部２４ａに当接したチップ１６を真空
吸着する。Next, the structure of the bonding tool 23 will be described with reference to FIG. 2, the bonding tool 23 includes a block 26 and a suction tool 24. A projection 24a is provided on the lower surface of the suction tool 24. The protrusions 24 a are provided at positions corresponding to the arrangement of the bumps 16 a (see FIG. 4) of the chip 16 to be sucked, and a plurality of suction tools 24 are used according to the kind of the chip 16. You. At the center of the suction tool 24, a suction hole 25 penetrating vertically is provided. By sucking the air from the suction hole 25, the suction tool 24 suction-adsorbs the chip 16 in contact with the protrusion 24a.
【００１５】ブロック２６には吸引路２７、２９が設け
られている。吸引路２７を真空吸引することにより、ブ
ロック２６の下面には吸着ツール２４が真空吸着されて
着脱自在に装着される。吸引路２９は、吸着ツール２４
の吸引孔２５に連通している。したがって、吸着ツール
２４を装着した状態で吸引路２９を真空吸引することに
より、吸着ツール２４はチップ１６を真空吸着する。The block 26 is provided with suction paths 27 and 29. By suctioning the suction path 27 under vacuum, the suction tool 24 is vacuum-sucked on the lower surface of the block 26 and is detachably mounted. The suction path 29 is provided for the suction tool 24
Is connected to the suction hole 25. Therefore, the suction tool 24 vacuum-suctions the chip 16 by vacuum-suctioning the suction path 29 with the suction tool 24 mounted.
【００１６】また、ブロック２６には加熱手段であるヒ
ータ２８が内設されており、ヒータ２８は吸着ツール２
４を介してチップ１６を加熱する。このとき、吸着ツー
ル２４の突起部２４ａのみがチップ１６と当接している
ため、ヒータ２８からの熱は突起部２４ａを介してチッ
プ１６のバンプ１６ａの周囲に集中的に伝達される。A heater 28 serving as a heating means is provided in the block 26.
The chip 16 is heated via 4. At this time, since only the protrusion 24a of the suction tool 24 is in contact with the chip 16, heat from the heater 28 is intensively transmitted to the periphery of the bump 16a of the chip 16 via the protrusion 24a.
【００１７】このバンプ付きワークのボンディング装置
は上記のような構成より成り、次に図３〜図９を参照し
て動作を説明する。なお、図３〜図９はバンプ付きワー
クのボンディング工程を工程順に示している。図３にお
いて、基板１５の上面にはパッド３２、回路パターン３
３、パッド３４が形成されている。またパッド３２上に
は半田部３５が形成されている。まず、可動テーブル１
２を駆動して基板１５を位置決めし、昇降テーブル２０
を駆動してディスペンサ２２を基板１５上に下降させて
基板１５の上面に樹脂３６を塗布する。この樹脂３６は
熱硬化性であって、２００℃以上で所定時間保持すると
硬化する。なお、半田部３５の半田の溶解温度は１８３
℃であり、樹脂３６の硬化温度より低い。したがって、
加熱開始後に半田部３５が溶解する時点では、樹脂３６
は未だ硬化しない。The bonding apparatus for a work with bumps has the above-described configuration. Next, the operation will be described with reference to FIGS. 3 to 9 show a bonding step of a work with bumps in the order of steps. In FIG. 3, pads 32 and circuit patterns 3
3. Pads 34 are formed. Further, a solder portion 35 is formed on the pad 32. First, the movable table 1
2 is driven to position the substrate 15 and the lifting table 20 is moved.
Is driven to lower the dispenser 22 onto the substrate 15 to apply the resin 36 on the upper surface of the substrate 15. This resin 36 is thermosetting, and is cured when kept at 200 ° C. or higher for a predetermined time. The melting temperature of the solder in the solder portion 35 is 183.
° C, which is lower than the curing temperature of the resin 36. Therefore,
At the time when the solder portion 35 is melted after the start of heating, the resin 36
Is not yet cured.
【００１８】次に図４に示すように、ボンディングツー
ル２３により供給部１７からチップ１６を真空吸着して
保持させ、可動テーブル１２を駆動して基板のパッド３
２をチップ１６の下面に突設されたバンプ１６ａに位置
合わせした後、昇降テーブル１９を駆動してバンプ１６
ａを樹脂３６が塗布された半田部３５上に着地させる。
バンプ１６ａは、例えば金、銀、銅などの半田よりも融
点の高い金属である。ボンディングツール２３のツール
温度を２００℃程度に設定してチップ１６を加熱する
と、ヒータ２８から伝えられる熱は突起部２４ａによっ
てバンプ１６ａを集中的に加熱し、更にこの熱は半田部
３５に伝えられる。この結果半田部３５は溶融し、図５
に示すようにバンプ１６ａの表面にはバンプ１６ａの素
材である金、銀、銅などの金属と、半田部３５の素材で
あるすずや鉛などの金属の異種金属の合金層４０が薄く
生じる。一般に合金層はぜい弱なものであり、後述する
ように振動を付与することにより、合金層４０は簡単に
破壊される。Next, as shown in FIG. 4, the chip 16 is sucked and held from the supply part 17 by the bonding tool 23, and the movable table 12 is driven to drive the pad 3 of the substrate.
2 is aligned with the bump 16 a projecting from the lower surface of the chip 16, and the lifting table 19 is driven to drive the bump 16 a.
a is landed on the solder portion 35 to which the resin 36 is applied.
The bump 16a is a metal having a higher melting point than solder, such as gold, silver, or copper. When the chip 16 is heated with the tool temperature of the bonding tool 23 set to about 200 ° C., the heat transmitted from the heater 28 intensively heats the bump 16 a by the projection 24 a, and this heat is transmitted to the solder 35. . As a result, the solder portion 35 is melted, and FIG.
As shown in FIG. 8, a thin alloy layer 40 of a metal such as gold, silver, copper or the like, which is a material of the bump 16a, and a metal such as tin or lead, which is a material of the solder portion 35, is formed on the surface of the bump 16a. Generally, the alloy layer is weak, and the alloy layer 40 is easily broken by applying vibration as described later.
【００１９】以上のようにしてチップ１６を基板１５に
ボンディングしたならば、ボンディングツール２３をチ
ップ１６から外して導通検査を行う。図６は導通検査を
示すものであって、テスター８のプローブ９を基板１５
のパッド３４に当て、電流の導通状態をテスター８で検
査する。なおこの時点では、樹脂３６は未硬化である。
上記導通検査で良品であったならば、基板３５を加熱炉
へ送って加熱し、樹脂３６を熱硬化させる（図７）。以
上によりチップ１６の基板１５へのボンディングは終了
する。After bonding the chip 16 to the substrate 15 as described above, the bonding tool 23 is removed from the chip 16 and a continuity test is performed. FIG. 6 shows a continuity test, in which the probe 9 of the tester 8 is connected to the substrate 15.
And the tester 8 checks the conduction state of the current. At this point, the resin 36 has not been cured.
If the continuity test shows a good product, the substrate 35 is sent to a heating furnace where it is heated to thermally cure the resin 36 (FIG. 7). Thus, the bonding of the chip 16 to the substrate 15 is completed.
【００２０】さて、図６に示す導通検査で不良の場合に
は、図８および図９に示す方法でリペア作業を行う。す
なわち、図８に示すようにチップ１６の上面に加振器４
１を押し当て、チップ１６に振動を付与する。するとぜ
い弱な合金層４０はこの振動によって破壊される。これ
により、チップ１６を基板１５から簡単に分離させるこ
とができる（図９）。If the continuity test shown in FIG. 6 is defective, a repair operation is performed by the method shown in FIGS. That is, as shown in FIG.
1 is applied to apply vibration to the tip 16. Then, the weak alloy layer 40 is destroyed by this vibration. Thus, the chip 16 can be easily separated from the substrate 15 (FIG. 9).
【００２１】このリペア作業は、樹脂１６が未硬化の状
態で行われるので、上記のようにして合金層４０を破壊
すれば、チップ１６は基板１５から難なく分離できる。
この場合、バンプ１６ａの表面に薄く生じた合金層４０
を破壊しただけであるから、図９に示すようにチップ１
６を基板１５から分離してもバンプ１６ａの形状は壊れ
ておらず、バンプ１６ａの形状は良好であり、したがっ
て分離後のチップ１６は十分に再使用が可能であり、ま
た基板１５も未硬化の樹脂３６を除去するなどして補修
することにより、再使用できる。勿論、樹脂３６は未硬
化であるので、基板１５やチップ１６から容易に剥ぎ取
ることができる。Since the repair operation is performed in a state where the resin 16 is not cured, the chip 16 can be easily separated from the substrate 15 by breaking the alloy layer 40 as described above.
In this case, the thin alloy layer 40 formed on the surface of the bump 16a
Since only the chip 1 was destroyed, as shown in FIG.
Even if 6 is separated from the substrate 15, the shape of the bump 16a is not broken, and the shape of the bump 16a is good. Therefore, the chip 16 after separation can be sufficiently reused, and the substrate 15 is also uncured. The resin 36 can be reused by repairing it by removing it. Of course, since the resin 36 is not cured, it can be easily peeled off from the substrate 15 or the chip 16.
【００２２】本発明は上記実施の形態に限定されないの
であって、図９に示すチップと基板の分離時に樹脂は未
硬化であればよいものであり、したがって樹脂としては
半田の融点以下の低温度で硬化するものであっても、硬
化に長時間を要するもの、すなわち図３から図９に示す
工程を行う時間内に硬化しないものであってもよい。The present invention is not limited to the above-described embodiment, and it is sufficient that the resin is not cured when the chip and the substrate are separated as shown in FIG. It may be one that cures for a long time or one that requires a long time for curing, that is, one that does not cure within the time for performing the steps shown in FIGS. 3 to 9.
【００２３】また、導通検査後の良品について樹脂１６
を熱硬化させるために行われる加熱工程は、本実施の形
態では加熱炉による例を示しているが、バンプ付きワー
ク１６をボンディングツール２３の加熱手段により行っ
てもよい。In addition, for non-defective products after the continuity test, the resin 16
In the present embodiment, an example in which the heating process is performed by using a heating furnace is shown in this embodiment, but the work 16 with bumps may be performed by the heating means of the bonding tool 23.
【００２４】[0024]
【発明の効果】本発明によれば、ボンディングツールの
加熱手段からの熱をバンプ付きワークのバンプ部に集中
的に伝達させてワークのパッド上の半田部を溶融させ、
バンプをワークのパッドにボンディングすることによ
り、ワークの上面に塗布された接合用の樹脂が未硬化の
状態で前記パッドと前記バンプの導通検査を行うことが
できる。したがって、導通検査の結果が不良の場合には
バンプ付きワークをワークから簡単に分離できるので、
リペア作業を簡単に行うことができる。また従来技術の
ようにワークを加熱することなくリペアを行えるので、
バンプ付きワークやワークに実装された他の電子部品な
どに熱ダメージを与えることもなく、リペア作業を有利
に行うことができる。According to the present invention, the heat from the heating means of the bonding tool is intensively transmitted to the bumps of the bumped work to melt the solder on the work pads.
By bonding the bumps to the pads of the work, it is possible to conduct a conduction test between the pads and the bumps in a state where the bonding resin applied to the upper surface of the work is uncured. Therefore, if the result of the continuity test is defective, the work with bumps can be easily separated from the work.
Repair work can be performed easily. Also, repair can be performed without heating the work as in the prior art,
The repair work can be advantageously performed without causing thermal damage to the work with bumps and other electronic components mounted on the work.
【図１】本発明の一実施の形態のバンプ付きワークのボ
ンディング装置の斜視図FIG. 1 is a perspective view of a bonding apparatus for a work with bumps according to an embodiment of the present invention.
【図２】本発明の一実施の形態のバンプ付きワークのボ
ンディングツールの側断面図FIG. 2 is a side sectional view of a bonding tool for a work with bumps according to an embodiment of the present invention.
【図３】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図FIG. 3 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.
【図４】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図FIG. 4 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.
【図５】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図FIG. 5 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.
【図６】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図FIG. 6 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.
【図７】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図FIG. 7 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.
【図８】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図FIG. 8 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.
【図９】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図FIG. 9 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.
【図１０】従来の基板にボンディングされたバンプ付き
ワークの側面図FIG. 10 is a side view of a conventional work with a bump bonded to a substrate.
１５ ワーク １６ チップ １６ａ バンプ ２３ ボンディングツール ２４ 吸着ツール ２４ａ 突起部 ２５ 吸着孔 ２６ ブロック ２８ ヒータ ３２ パッド ３５ 半田部 ３６ 樹脂 ４０ 合金層 ４１ 加振器 15 Work 16 Chip 16a Bump 23 Bonding Tool 24 Suction Tool 24a Projection 25 Suction Hole 26 Block 28 Heater 32 Pad 35 Solder 36 Resin 40 Alloy Layer 41 Exciter
Claims (2)
クの上面に樹脂を塗布する塗布部と、ワークにバンプ付
きワークをボンディングするボンディングヘッドと、ボ
ンディングヘッドにバンプ付きワークを供給するワーク
供給部とを備え、前記ボンディングヘッドに装着された
ボンディングツールが、バンプ付きワークを真空吸着す
る吸着孔と、バンプ付きワークを加熱する加熱手段と、
前記吸着孔の周囲にバンプ付きワークのバンプの配列に
対応して形成されバンプ付きワークの上面に当接する突
起部を備え、前記加熱手段からの熱を前記突起部を介し
てバンプ付きワークのバンプ部に集中的に伝達すること
を特徴とするバンプ付きワークのボンディング装置。1. A positioning section for positioning a work, an application section for applying a resin to the upper surface of the work, a bonding head for bonding the work with bumps to the work, and a work supply section for supplying the work with bumps to the bonding head. Comprising, a bonding tool mounted on the bonding head, a suction hole for vacuum suction of the work with bumps, heating means for heating the work with bumps,
A protrusion formed around the suction hole and corresponding to the arrangement of the bumps of the bumped work, and contacting an upper surface of the bumped work; heat from the heating means is supplied to the bump of the bumped work via the protrusion; A bonding device for a work with bumps, which is intensively transmitted to a part.
ンディングツールにバンプ付きワークを保持させてバン
プ付きワークのバンプを前記ワークのパッドに着地させ
る工程と、ボンディングツールに設けられた加熱手段に
よって前記パッド上の半田部を溶融させて前記バンプを
前記パッド上にボンディングし、且つ互いに異種金属で
ある前記バンプと前記半田部の合金層を前記バンプの表
面に生じさせる工程と、前記樹脂が未硬化の状態で前記
バンプと前記パッドの導通検査を行う工程とを含むこと
を特徴とするバンプ付きワークのボンディング方法。2. A step of applying a resin to the upper surface of the work, a step of holding the work with bumps on a bonding tool and landing the bumps of the work with bumps on pads of the work, and a heating means provided on the bonding tool. Melting the solder portion on the pad by bonding the bump on the pad, and forming an alloy layer of the bump and the solder portion, which are different metals, on the surface of the bump; and Performing a continuity test between the bump and the pad in an uncured state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20273997A JP3381565B2 (en) | 1997-07-29 | 1997-07-29 | Bonding method of work with bump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20273997A JP3381565B2 (en) | 1997-07-29 | 1997-07-29 | Bonding method of work with bump |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1154559A true JPH1154559A (en) | 1999-02-26 |
| JP3381565B2 JP3381565B2 (en) | 2003-03-04 |
Family
ID=16462370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20273997A Expired - Lifetime JP3381565B2 (en) | 1997-07-29 | 1997-07-29 | Bonding method of work with bump |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3381565B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002313843A (en) * | 2001-04-18 | 2002-10-25 | Sharp Corp | Connection device |
| JP2007243217A (en) * | 2007-05-14 | 2007-09-20 | Hitachi Chem Co Ltd | Mounting method |
| CN100431123C (en) * | 2005-06-15 | 2008-11-05 | 英华达(上海)电子有限公司 | Method for restoring integrated circuit chip and printed steel plate private for the same |
| KR101261926B1 (en) | 2011-10-05 | 2013-05-08 | 현대자동차주식회사 | Sodering method for ball grid array semiconductor package |
| WO2017164385A1 (en) * | 2016-03-24 | 2017-09-28 | 株式会社新川 | Bonding apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9434029B2 (en) * | 2011-12-20 | 2016-09-06 | Intel Corporation | High performance transient uniform cooling solution for thermal compression bonding process |
-
1997
- 1997-07-29 JP JP20273997A patent/JP3381565B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002313843A (en) * | 2001-04-18 | 2002-10-25 | Sharp Corp | Connection device |
| CN100431123C (en) * | 2005-06-15 | 2008-11-05 | 英华达(上海)电子有限公司 | Method for restoring integrated circuit chip and printed steel plate private for the same |
| JP2007243217A (en) * | 2007-05-14 | 2007-09-20 | Hitachi Chem Co Ltd | Mounting method |
| JP4555999B2 (en) * | 2007-05-14 | 2010-10-06 | 日立化成工業株式会社 | Implementation method |
| KR101261926B1 (en) | 2011-10-05 | 2013-05-08 | 현대자동차주식회사 | Sodering method for ball grid array semiconductor package |
| WO2017164385A1 (en) * | 2016-03-24 | 2017-09-28 | 株式会社新川 | Bonding apparatus |
| JPWO2017164385A1 (en) * | 2016-03-24 | 2019-03-22 | 株式会社新川 | Bonding device |
| US11508688B2 (en) | 2016-03-24 | 2022-11-22 | Shinkawa Ltd. | Bonding apparatus including a heater and a cooling flow path used for stacking a plurality of semiconductor chips |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3381565B2 (en) | 2003-03-04 |
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