JPH1154487A - Plasma cleaning device and plasma cleaning method for electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To maintain a unit process time and realize improvement in productivity, by determining the timing for maintenance of a vacuum chamber from the result of measurement of the degree of vacuum at the time of vacuum exhaust inside the vacuum chamber, and indicating maintenance of the vacuum chamber on the basis of a command from the result of determination. SOLUTION: A plasma generation gas such as argon gas is supplied into a vacuum chamber 5 by a gas supply unit 17, and vacuum exhaust inside the vacuum chamber 5 is carried out by a vacuum exhaust unit 14. In this case, the degree of vacuum inside the vacuum chamber 5 is measured by a vacuum gauge 15 as means for measuring the degree of vacuum, and measurement data is sent to a control section. The control section judges the degree of attainment with respect to the degree of vacuum at the time of vacuum exhaust inside the vacuum chamber 5 from the result of measurement of the vacuum gauge 15, and determines whether or not to carry out maintenance from the judgment. On the basis of a command from the result of determination, maintenance such as cleaning and replacement of a shield member inside the vacuum chamber 5 is indicated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma cleaning apparatus and a plasma cleaning method for an electronic component, which cleans the surface of the electronic component with plasma.

[0002]

2. Description of the Related Art As a method for cleaning the surface of an electronic component, a plasma cleaning method is known (for example, Japanese Patent Laid-Open No. Hei 6-21032). In this method, plasma is generated under a reduced pressure atmosphere, and electrons and ions generated as a result are caused to collide with the surface of an electronic component to perform a surface treatment. This method requires a vacuum chamber that is isolated from the outside and an exhaust unit that evacuates the vacuum chamber to form a reduced-pressure atmosphere. Then, in each cycle of the plasma cleaning, the vacuum chamber is opened and closed, and electronic components are taken in and out. After the vacuum chamber is closed, evacuation is performed each time until the inside of the vacuum chamber reaches a predetermined degree of vacuum. The time required for evacuation occupies a considerable part of the tact time of one cycle of plasma cleaning.

[0003]

However, in plasma cleaning, electrons and ions are bombarded against the surface of an electronic component to remove contaminants on the surface by the etching effect. Scatters around, adheres to the inner wall surface of the vacuum chamber, and accumulates over time. Then, every time the vacuum chamber is opened and closed, water vapor and other gases in the atmosphere introduced from the outside are adsorbed to the deposited layer of this contaminant, and these gases are released from the deposited layer when the vacuum chamber is evacuated and are discharged to the outside. Is discharged to
Here, the deposited layer of the particulate contaminants significantly increases the microscopic surface area of the inner wall surface of the vacuum chamber, and as a result, water vapor and the like adsorbed in the vacuum chamber with the deposited layer on the inner wall surface. The amount of gas is extremely large as compared with the state without the deposition layer.

However, since the inner wall of the vacuum chamber is difficult to inspect, the deposited layer is apt to be left unnoticed, and if the deposited layer is left and deposition proceeds,
Increasing amounts of gas are adsorbed on the deposition layer, requiring longer evacuation times for each cycle. As described above, in the conventional plasma cleaning apparatus, there is a problem that the tact time is prolonged due to the deposition of contaminants on the inner wall of the vacuum chamber, and the productivity is not improved.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a plasma cleaning apparatus and a plasma cleaning method for an electronic component, which can maintain the tact time and improve the productivity.

[0006]

According to a first aspect of the present invention, there is provided a plasma cleaning apparatus for an electronic component, comprising: a vacuum chamber; an electrode provided in the vacuum chamber; a vacuum exhaust device for exhausting the vacuum chamber; A gas supply device for supplying a plasma generating gas to the electrode, a high-frequency power supply for applying a high-frequency voltage to the electrodes, a vacuum degree measuring unit for measuring the degree of vacuum in the vacuum chamber, and a vacuum for evacuating the vacuum chamber. A determination unit for determining a maintenance time of the vacuum chamber based on the degree measurement result; and an instruction unit for instructing maintenance of the vacuum chamber based on a command from the determination unit.

According to a second aspect of the present invention, there is provided a plasma cleaning method for an electronic component, wherein the electronic component is carried into a vacuum chamber, the inside of the vacuum chamber is evacuated, and a plasma generating gas is supplied into the vacuum chamber. A plasma cleaning method for an electronic component, in which plasma is generated by plasma cleaning the surface of the electronic component,
When the inside of the vacuum chamber was evacuated, the time required to reach a predetermined degree of vacuum was measured. If this time exceeded a set time, an instruction for maintenance of the vacuum chamber was issued by the instruction means.

According to a third aspect of the present invention, there is provided a plasma cleaning method for an electronic component, wherein the electronic component is carried into a vacuum chamber, and the inside of the vacuum chamber is evacuated, and then a gas for generating plasma is supplied into the vacuum chamber. A plasma cleaning method for an electronic component that generates plasma and plasma-cleans a surface of the electronic component,
After evacuation of the vacuum chamber is started, the degree of vacuum in the vacuum chamber after a predetermined time has elapsed is measured, and if the degree of vacuum is less than the set degree of vacuum, an instruction for maintenance of the vacuum chamber is issued by the instruction means. I made it.

According to a fourth aspect of the present invention, there is provided a plasma cleaning method for an electronic component, wherein the electronic component is carried into a vacuum chamber, a vacuum chamber is evacuated, a plasma generating gas is supplied into the vacuum chamber, and then a high frequency voltage is applied. A plasma cleaning method for an electronic component that generates plasma and plasma-cleans a surface of the electronic component,
When evacuation of the vacuum chamber was performed, the evacuation speed was measured. If the evacuation speed was lower than the set evacuation speed, an instruction for maintenance of the vacuum chamber was issued by the instruction means.

[0010]

According to the present invention having the above-described structure, the degree of vacuum in a vacuum chamber is measured by a vacuum measuring means, and cleaning and replacement of a shield member or the like on the inner wall of the vacuum chamber are performed based on the result of the measurement of the degree of vacuum. By giving a maintenance instruction, the operator can be informed of the timing of the maintenance. Accordingly, it is possible to prevent contaminants from being deposited on the inner wall of the vacuum chamber by a maintenance operation beyond a set limit, and to suppress an increase in evacuation time due to gas being adsorbed to the deposited layer, thereby maintaining tact time.

(Embodiment 1) FIG. 1 is a side view of a plasma cleaning apparatus for an electronic component according to a first embodiment of the present invention, and FIGS. 2, 3, and 4 are partial cross sections of the plasma cleaning apparatus for the electronic component. 5 and FIG. 5 are partial perspective views of the plasma cleaning device for the electronic component, FIG. 6 is a block diagram showing the configuration of a control system of the plasma cleaning device for the electronic component, and FIG. 7 shows the operation of the plasma cleaning device for the electronic component. It is a flowchart shown.

First, the overall structure of a plasma cleaning apparatus for electronic components will be described with reference to FIG. In FIG. 1, reference numeral 1 denotes a base frame, and a case 2 is provided on the base frame 1. Base plate 3 on case 2
Is provided, and a lid 4 is provided on the base plate 3. The base plate 3 and the lid 4 constitute a vacuum chamber 5. The electrode 6 is mounted through the base plate 3. A substrate 21 which is an electronic component to be plasma-cleaned is placed on the electrode 6.

An L-shaped bracket 7 is provided upright on the side of the case 2. A guide 8 is mounted on the bracket 7. A shaft 9 is inserted into the guide 8 so as to be slidable in the vertical direction. The upper part of the shaft 9 is connected to a key-shaped frame 10. The upper portion of the frame 10 projects in the horizontal direction, and is connected to the lid 4. A cylinder 11 is erected on the base frame 1,
The lower surface of the frame 10 is grounded to the upper end of the rod 11a of the cylinder 11. Therefore, when the rod 11a of the cylinder 11 projects, the lid 4 rises and opens the vacuum chamber 5, and when the rod 11a is pulled in, the lid 4 descends and closes the vacuum chamber 5. That is, cylinder 1
Reference numeral 1 denotes opening / closing means for the vacuum chamber 5.

A through hole 12 is provided at the right end of the base plate 3. A pipe 13 is connected to the through hole 12. The pipe 13 is connected to a vacuum exhaust device 14, a vacuum gauge 15, an atmospheric vent device 16, and a gas supply device 17. The vacuum exhaust device 14, the atmospheric vent device 16, and the gas supply device 17 include a vacuum exhaust valve 14a, an atmospheric vent valve 16a, and a gas introduction valve 17a, respectively.
The gas supply device 17 supplies a gas for generating plasma, such as an argon gas, into the vacuum chamber 5. The evacuation device evacuates the vacuum chamber 5. The vacuum gauge 15 serving as a vacuum degree measuring unit measures the degree of vacuum in the vacuum chamber 5 and sends measurement data to the control unit 60.

Below the electrode 6, a high-frequency power supply 18 is provided. The high frequency power supply 18 is electrically connected to the electrode 6 via a cable 19. The high frequency power supply 18 is the electrode 6
Is applied with a high-frequency voltage. The electrode 6 and the cable 19 are covered by a shield 20.

Next, the vacuum chamber 5 and the electrode 6 will be described with reference to FIGS. As shown in FIGS. 2 and 3, the vacuum chamber 5 has a substantially rectangular parallelepiped shape.
A seal groove 25 is provided in a contact portion with the upper lid 4. The vacuum chamber 5 is sealed by a seal 26 mounted inside the seal groove 25.

In FIGS. 2 and 3, hatched portions with a sparse pitch indicate portions that function as ground electrodes.
The hatched portion at the fine pitch indicates the electrode 6 to which the high-frequency voltage is applied. First, the electrode 6 will be described. A rectangular opening 27 is opened in the center of the base plate 3. The electrode 6 is disposed through the opening 27. As shown, the electrode 6 is divided into three parts. Of the three, the uppermost electrode 6a is disposed inside the vacuum chamber 5 on the base plate 3, and the substrate 21 is placed on the upper surface thereof. That is, the upper electrode 6a also serves as the mounting portion of the substrate 21.

On the upper surface of the upper electrode 6a, the substrate 2 is provided at both ends.
A convex portion 28 as a guide portion corresponding to the width of 1 is formed. The interval W between the convex portions 28 is substantially equal to the width of the substrate 21. When the substrate 21 is transported, the convex portions 28 abut on both side surfaces of the substrate 21 to guide the transport of the substrate 21. That is, the upper electrode 6a also serves as a guide rail for sliding and transporting the substrate 21.
On the center line of the upper surface of the upper electrode 6a, a concave portion 29 which is continuous along the transport direction of the substrate 21 is provided. The concave portion 29 is for receiving a claw 30a at the distal end of a transfer arm 30 as a substrate transfer means.

In FIG. 2, a concave portion 31 is formed on the lower surface of the upper electrode 6a except for both ends. This recess 31
Is fitted with a block-shaped middle electrode 6b. Therefore, the upper electrode 6a is detachably mounted on the middle electrode 6b. The middle electrode 6b is mounted on the lower electrode 6c. A counterbore 32 for a bolt is formed on the lower electrode 6c. A washer 33 made of an insulating material is mounted inside the counterbore 32. An insulating plate 34 is inserted between the lower electrode 6c and the lower surface of the base plate 3. The bolt 35 inserted into the counterbore 32 is screwed into the lower surface of the base plate 3. Therefore, the lower electrode 6c is mounted on the lower surface of the base plate 3 by the bolt 35 with the insulator 34 interposed therebetween.

A seal groove 25 is provided on the lower surface of the base plate 3 and the upper surface of the lower electrode 6c. Seals 26 are mounted in these seal grooves 25. Vacuum chamber 5
The lower electrode 6c is strongly pressed against the lower surface of the base plate 3 via the insulating plate 34 by an air pressure difference due to the vacuum suction of the inside of the base plate 3. This pressing force causes the seal 2
6 is crushed and the sealing surface is sealed. Since the electrodes 6 are divided in this manner, when the type of the substrate 21 is changed, the used upper electrode 6a is removed, and the new upper electrode 6a having the interval W between the convex portions 28 that matches the width of the new substrate 21 is used. May be mounted on the middle electrode 6b.

Next, the ground electrode will be described. In FIG. 2, the base plate 3, the lid 4, and the ground rail 36, which are hatched with sparseness, are ground electrodes. The earth rail 36 is mounted on the upper surface of the base plate 3 so as to surround the upper electrode 6a. As shown in FIG. 3, convex portions 36 a for guiding the substrate 21 are formed on both sides of the front end and the rear end of the ground rail 36 in the longitudinal direction (the transport direction of the substrate 21). The protrusion 36a is continuous with the protrusion 28. In addition, concave portions 36b are formed on both sides of the ground rail 36 so that the claw 30a at the tip of the transfer arm 30 can enter. The recess 36b is also continuous with the recess 29.

In FIG. 3, a transfer rail 39 having the same cross-sectional shape as the earth rail 36 is provided on the base plate 3 on an extension of the earth rail 36 outside the vacuum chamber 5.
Is provided. The substrate 21 is transported on the transfer rail 39 when the vacuum chamber 5 is open. The ground rails 36 and the transfer rails 39 are replaced with the ones that match the width of the new substrate 21 in accordance with the type change of the substrate 21 as in the case of the upper electrode 6a.

As shown in FIG. 2, the electrode 6 and each part of the ground electrode are opposed to each other while maintaining the insulating gaps G1, G2, G3, and are not directly in contact with each other and have a distance in which plasma is not generated in this gap. It is kept and attached.

Next, a transport system of the plasma cleaning apparatus will be described with reference to FIG. In FIG. 4, an L-shaped bracket 40 is provided on the base frame 1. A horizontal guide rail 41 is provided above the bracket 40.
a, and a slider 41b is slidably fitted to the guide rail 41a. Slider 41b
A support plate 42 is provided upright. A guide 43 is mounted on the upper portion of the support plate 42. Guide 4
A slide shaft 44 is inserted into 3 so as to be vertically movable. The upper end of the slide shaft 44 is a lifting block 4
5.

A cylinder 46 is mounted on the upper end of the support plate 42. Rod 47 of cylinder 46
Is connected to the arm 45. Lifting block 4
A transfer arm 30 is attached to the tip of the transfer arm 5. The claw 30a at the tip of the transfer arm 30 bends downward and enters the recess 29 of the upper electrode 6a and the recess 36b of the ground rail 36 (see also FIG. 2). Therefore, when the rod 47 of the cylinder 46 protrudes and retracts, the claw 30a of the transfer arm 30 moves up and down at the position of the concave portion 29 on the upper surface of the upper electrode 6a. That is, when the rod 47 is immersed, the claw 30a enters the concave portion 29 and can push the end of the substrate 21. When the rod 47 projects, the claw 30a retreats above the substrate 21.

In FIG. 4, a motor 48 is provided on the base frame 1. A pulley 49 is mounted on a rotating shaft of the motor 48. A belt 50 is stretched between the pulley 49 and a driven pulley (not shown). A bracket 51 is attached to the belt 50. The upper end of the bracket 51 is connected to the support plate 42.
Therefore, when the motor 48 rotates forward and backward, the support plate 42 moves horizontally along the guide rail 41a, whereby the transfer arm 30 transfers the substrate 21 along the upper surface of the upper electrode 6a and returns to the original position. Do.

Next, the shield member 37 mounted on the cover member 4 will be described with reference to FIG. In FIG. 5, a replaceable shield member 37 is attached by bolts 38 to the inner and lower surfaces of the lid portion 4 (shown upside down), that is, the ceiling surface inside the vacuum chamber 5. The shield member 37 is attached so as to cover the side wall and the ceiling in the vacuum chamber 5, and contaminants removed from the substrate 21 during plasma cleaning are scattered and directly adhere to and deposit on the inner and lower surfaces of the lid 4 serving as a ground electrode. prevent. The shield member 37 is removed when the deposit of contaminants on its inner surface reaches a certain limit, and necessary cleaning is performed or replaced with a new one.

Next, the configuration of the control system of the plasma cleaning apparatus will be described with reference to FIG. In FIG. 6, a control unit 60 is a CPU, and controls the entire apparatus. Control unit 6
0 has a storage unit 61 and a clock 62. Storage unit 61
Stores the set vacuum degree of the vacuum chamber 5, the set vacuum arrival time, and the like. The clock 62 is a timer that measures the time to reach vacuum. The control unit 60 controls the vacuum gauge 15, the vacuum exhaust device 14, the atmospheric vent valve 16 via the interface 63.
a, display monitor 64, high-frequency power supply 18, cylinder 11 serving as a chamber opening / closing means, vacuum exhaust valve 14a, and gas introduction valve 17a. In addition, the control unit 60 determines the degree of reaching the degree of vacuum during the evacuation of the vacuum chamber 5 based on the measurement result of the vacuum gauge 15, and determines whether maintenance should be performed based on the result. Therefore, the control unit 60 is a determining means for determining the maintenance time. The display monitor 64 displays maintenance instructions such as cleaning and replacement of the shield member 37 in the vacuum chamber 5 based on instructions from the control unit 60. Therefore, the display monitor 64 is an instruction unit that instructs maintenance such as cleaning and replacement of the shield member 37.

This substrate plasma cleaning apparatus has the above-described configuration, and its operation will be described below with reference to the drawings according to the flow of FIG. First, in FIG. 4, the cycle of the plasma cleaning process starts from a state where the lid 4 of the vacuum chamber 5 is raised and the vacuum chamber 5 is opened. When the substrate 21 is carried into the vacuum chamber 5, the lid 4 of the vacuum chamber 5 is lowered and the vacuum chamber 5 is closed (ST1). Next, the evacuation valve 14a is opened (ST2), and the evacuation device 14 (FIG. 1) is driven.

Here, the current time t1 is read from the clock 62 in order to measure the vacuum arrival time (ST3). Next, vacuum measurement data is sent from the vacuum gauge 15, and it is determined whether or not the degree of vacuum has reached the set degree of vacuum (ST4).
If it has not reached, the degree of vacuum measurement is continued, and if it has reached, the time t2 at that time is read (ST5). Next, a vacuum arrival time T is obtained from t1 and t2 (ST
6) It is determined whether or not T is within the set time T0 (ST7). If the vacuum arrival time T obtained based on the vacuum measurement result in this way exceeds the set time T0, it is determined that the amount of contaminants deposited and deposited on the shield member 37 is equal to or greater than the set limit. In step ST8, a warning is displayed, and maintenance of the vacuum chamber 5, such as cleaning or replacement of the shield member 37, is instructed.

If the vacuum arrival time T is within the set time T0, the gas introduction valve 17a is opened and the gas supply device 17 is opened.
Is driven, and a plasma generating gas is introduced into the vacuum chamber 5. Next, the high frequency power supply 18 is driven (ST1).
0), a high frequency voltage is applied to the electrode 6. Plasma is generated by the high frequency voltage, and plasma cleaning is performed. Thereafter, the gas introduction valve 17a is closed (S
T11) Then, the evacuation valve is closed (ST1).
2). Next, the atmospheric vent valve 16a is opened (ST1).
3) Atmosphere is introduced into the vacuum chamber 5. Thereafter, the lid 4 of the vacuum chamber 5 is raised, the vacuum chamber 5 is opened (ST14), and one cycle of the plasma cleaning is completed.

(Embodiment 2) FIG. 8 is a flowchart showing the operation of the electronic component plasma cleaning apparatus according to Embodiment 2 of the present invention. In the first embodiment, the maintenance instruction of the vacuum chamber 5 is issued when the vacuum arrival time exceeds the set time, but in the second embodiment,
The necessity of the maintenance is determined based on whether or not the set vacuum degree is reached after a predetermined time has elapsed from the start of evacuation.

In FIG. 8, ST21 to ST23 are the same as ST1 to ST3 of the first embodiment. Next, a vacuum measurement time t2 is calculated (ST24). Here, the time t2 at which the set predetermined time T1 has elapsed is obtained from the time t1 read in ST23.
Next, it is determined whether the time at that time has reached the vacuum measurement time (ST25). If the vacuum measurement time has been reached, the degree of vacuum p2 at that time is measured (ST26).

Next, it is determined whether or not the measured vacuum degree p2 is equal to or higher than the set vacuum degree p0 (ST27). If the degree of vacuum p2 is less than the set degree of vacuum, a warning is displayed and maintenance of the vacuum chamber 5 is instructed (ST28).

If the degree of vacuum p2 is equal to or higher than the set degree of vacuum, S
The process proceeds to the normal plasma cleaning operation after T29.
Steps after ST29 are the same as those in the first embodiment.
This is the same as each step after T9.

(Embodiment 3) FIG. 9 is a flowchart showing the operation of the electronic component plasma cleaning apparatus according to Embodiment 3 of the present invention. In the third embodiment, the necessity of the maintenance is determined based on whether or not the evacuation speed is equal to or higher than a set evacuation speed.

In FIG. 9, ST41 to ST43 are the same as ST1 to ST3 of the first embodiment. Next, the current degree of vacuum p1 is measured (ST44), and then the vacuum measurement time t2 is calculated (ST45). Here, the time t2 at which the set predetermined time T2 has elapsed from the time t1 read in ST43 is obtained. Next, it is determined whether the time at that time has reached the vacuum measurement time t2 (ST46). When the vacuum measurement time has been reached, the degree of vacuum p2 at that time is measured (ST4).
7). Next, the exhaust speed v1 is calculated based on p1, p2 and t1, t2 (ST48).

Next, it is determined whether or not the calculated exhaust speed v1 is equal to or higher than the set exhaust speed v0 (ST49). If the pumping speed v1 is less than the set pumping speed v0, a warning is displayed, and maintenance of the vacuum chamber 5 is instructed (ST50). The exhaust speed v1 is equal to the set exhaust speed v
If it is 0 or more, the process proceeds to the normal plasma cleaning operation after ST51. The steps after ST51 are the same as the steps after ST9 in the first embodiment.

As described in each of the above-described embodiments, the degree of vacuum in the vacuum chamber 5 is measured by the degree-of-vacuum measuring means for each processing cycle of plasma cleaning, and the vacuum is reached until a predetermined degree of vacuum is reached. Time, the degree of vacuum after a predetermined time has elapsed since the start of evacuation, the evacuation speed, etc.
If these do not satisfy the respective set conditions, maintenance of the vacuum chamber 5 such as cleaning and replacement of the shield member 37 is automatically instructed. Therefore, necessary maintenance can be performed in a timely manner, and an increase in evacuation time due to deposition of contaminants can be suppressed to a certain limit or less, and a tact time can be maintained. In addition, it is not necessary for the operator to frequently check the contamination status of the shield member 37, and it is possible to reduce the labor required for maintenance and inspection work in the narrow vacuum chamber 5 where visual inspection is difficult.

[0040]

According to the present invention, the vacuum chamber 5 is constantly measured by measuring the vacuum arrival time, the degree of vacuum after a predetermined time elapses from the start of vacuum evacuation, the vacuum evacuation speed, etc. at each cycle of plasma cleaning. The status of the accumulation of contaminants inside the chamber is monitored, and if necessary, maintenance of the shield member on the inner wall of the vacuum chamber is performed in a timely manner in accordance with instructions that are automatically notified. Does not accumulate beyond the set limit, and therefore, the increase in evacuation time due to the gas being adsorbed to the deposited layer can be suppressed to maintain the tact time and reduce the labor required for maintenance and inspection work. be able to.

[Brief description of the drawings]

FIG. 1 is a side view of an electronic component plasma cleaning apparatus according to a first embodiment of the present invention.

FIG. 2 is a partial cross-sectional view of the plasma cleaning apparatus for an electronic component according to the first embodiment of the present invention.

FIG. 3 is a partial cross-sectional view of the plasma cleaning apparatus for an electronic component according to the first embodiment of the present invention.

FIG. 4 is a partial sectional view of the plasma cleaning apparatus for an electronic component according to the first embodiment of the present invention;

FIG. 5 is a partial perspective view of the electronic component plasma cleaning apparatus according to the first embodiment of the present invention.

FIG. 6 is a block diagram illustrating a configuration of a control system of the plasma cleaning apparatus for an electronic component according to the first embodiment of the present invention.

FIG. 7 is a flowchart illustrating the operation of the electronic component plasma cleaning apparatus according to the first embodiment of the present invention;

FIG. 8 is a flowchart showing the operation of the plasma cleaning apparatus for an electronic component according to the second embodiment of the present invention;

FIG. 9 is a flowchart showing the operation of the plasma cleaning apparatus for an electronic component according to the third embodiment of the present invention;

[Explanation of symbols]

 3 Base plate 4 Lid 5 Vacuum chamber 6 Electrode 6a Upper electrode 6c Lower electrode 11 Cylinder 14 Vacuum exhaust device 15 Vacuum gauge 17 Gas supply device 18 High frequency power supply 21 Substrate 37 Shielding member 60 Control unit 61 Storage unit 62 Clock 64 Display monitor

Claims (4)

[Claims] A vacuum chamber, an electrode provided in the vacuum chamber, a vacuum exhaust device for exhausting the vacuum chamber, a gas supply device for supplying a plasma generating gas into the vacuum chamber, and a high-frequency voltage applied to the electrodes. A high-frequency power supply for applying pressure, vacuum degree measuring means for measuring the degree of vacuum in the vacuum chamber, judgment means for judging maintenance time of the vacuum chamber from a result of measuring the degree of vacuum when the inside of the vacuum chamber is evacuated, and And a commanding means for commanding maintenance of the vacuum chamber based on a command from the determining means. 2. An electronic component is carried into a vacuum chamber, a vacuum chamber is evacuated, a plasma generating gas is supplied into the vacuum chamber, and a plasma is generated by a high-frequency voltage to generate a plasma on the surface of the electronic component. A plasma cleaning method for an electronic component to be cleaned, wherein a time required to reach a predetermined degree of vacuum when evacuating the vacuum chamber is measured. A plasma cleaning method for an electronic component, wherein a maintenance instruction for a vacuum chamber is issued. 3. An electronic component is carried into a vacuum chamber, and the inside of the vacuum chamber is evacuated, a plasma generating gas is supplied into the vacuum chamber, and plasma is generated by a high-frequency voltage to generate a plasma on the surface of the electronic component. A plasma cleaning method for an electronic component to be cleaned, wherein after starting the evacuation of the vacuum chamber, measuring a degree of vacuum in the vacuum chamber after a predetermined time has elapsed, and if the degree of vacuum is less than a set degree of vacuum, A plasma cleaning method for an electronic component, wherein a maintenance instruction for a vacuum chamber is issued by an instruction means. 4. An electronic component is carried into a vacuum chamber, a vacuum chamber is evacuated, a gas for generating plasma is supplied into the vacuum chamber, and a plasma is generated by a high frequency voltage to generate a plasma on the surface of the electronic component. A plasma cleaning method for an electronic component to be cleaned, wherein a vacuum exhaust speed is measured when the vacuum chamber is evacuated,
If the evacuation speed is lower than the set evacuation speed, an instruction for maintenance of the vacuum chamber is issued by the instructing means.