JPH11514498A - 埋め込み接点ソーラセルのメタライゼーション - Google Patents

埋め込み接点ソーラセルのメタライゼーション

Info

Publication number
JPH11514498A
JPH11514498A JP9515350A JP51535097A JPH11514498A JP H11514498 A JPH11514498 A JP H11514498A JP 9515350 A JP9515350 A JP 9515350A JP 51535097 A JP51535097 A JP 51535097A JP H11514498 A JPH11514498 A JP H11514498A
Authority
JP
Japan
Prior art keywords
dielectric
groove
dopant
grooves
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP9515350A
Other languages
English (en)
Japanese (ja)
Inventor
マーティン アンドリュー グリーン
スチュアート ロス ベンハム
クリスチアーナ ビー ホンスバーグ
Original Assignee
ユニサーチ リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ユニサーチ リミテッド filed Critical ユニサーチ リミテッド
Publication of JPH11514498A publication Critical patent/JPH11514498A/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/133—Providing edge isolation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP9515350A 1995-10-19 1996-10-14 埋め込み接点ソーラセルのメタライゼーション Ceased JPH11514498A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AUPN6063A AUPN606395A0 (en) 1995-10-19 1995-10-19 Metallization of buried contact solar cells
AU6063 1995-10-19
PCT/AU1996/000647 WO1997015075A1 (en) 1995-10-19 1996-10-14 Metallization of buried contact solar cells

Publications (1)

Publication Number Publication Date
JPH11514498A true JPH11514498A (ja) 1999-12-07

Family

ID=3790390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9515350A Ceased JPH11514498A (ja) 1995-10-19 1996-10-14 埋め込み接点ソーラセルのメタライゼーション

Country Status (4)

Country Link
EP (1) EP0958597A1 (enExample)
JP (1) JPH11514498A (enExample)
AU (1) AUPN606395A0 (enExample)
WO (1) WO1997015075A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006024757A (ja) * 2004-07-08 2006-01-26 Shin Etsu Handotai Co Ltd 太陽電池および太陽電池の製造方法
JP2006066802A (ja) * 2004-08-30 2006-03-09 Shin Etsu Handotai Co Ltd 太陽電池の製造方法および太陽電池
JP2008517451A (ja) * 2004-10-14 2008-05-22 インスティトゥート フューア ゾラールエネルギーフォルシュング ゲーエムベーハー 背面接触式太陽電池上の導電層の接触分離の方法および太陽電池
JP2010278441A (ja) * 2009-05-26 2010-12-09 Korea Iron & Steel Co Ltd 集積型薄膜太陽電池及びその製造方法
JP2011518439A (ja) * 2008-04-18 2011-06-23 １３６６ テクノロジーズ インク． ソーラーセルの拡散層をパターニングする方法及び当該方法によって作成されたソーラーセル

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10103114A1 (de) * 2001-01-24 2002-10-31 Univ Stuttgart Herstellen elektrischer Verbindungen in Substratöffnungen von Schaltungseinheiten mittels gerichteter Abscheidung leitfähiger Schichten
US20130000705A1 (en) * 2009-12-16 2013-01-03 Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. Photovoltaic device and method of its fabrication
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU570309B2 (en) * 1984-03-26 1988-03-10 Unisearch Limited Buried contact solar cell
US4549927A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006024757A (ja) * 2004-07-08 2006-01-26 Shin Etsu Handotai Co Ltd 太陽電池および太陽電池の製造方法
JP2006066802A (ja) * 2004-08-30 2006-03-09 Shin Etsu Handotai Co Ltd 太陽電池の製造方法および太陽電池
JP2008517451A (ja) * 2004-10-14 2008-05-22 インスティトゥート フューア ゾラールエネルギーフォルシュング ゲーエムベーハー 背面接触式太陽電池上の導電層の接触分離の方法および太陽電池
JP2011518439A (ja) * 2008-04-18 2011-06-23 １３６６ テクノロジーズ インク． ソーラーセルの拡散層をパターニングする方法及び当該方法によって作成されたソーラーセル
JP2010278441A (ja) * 2009-05-26 2010-12-09 Korea Iron & Steel Co Ltd 集積型薄膜太陽電池及びその製造方法

Also Published As

Publication number Publication date
AUPN606395A0 (en) 1995-11-09
WO1997015075A1 (en) 1997-04-24
EP0958597A4 (enExample) 1999-11-24
EP0958597A1 (en) 1999-11-24

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