JPH11509955A5 - - Google Patents
Info
- Publication number
- JPH11509955A5 JPH11509955A5 JP1997542260A JP54226097A JPH11509955A5 JP H11509955 A5 JPH11509955 A5 JP H11509955A5 JP 1997542260 A JP1997542260 A JP 1997542260A JP 54226097 A JP54226097 A JP 54226097A JP H11509955 A5 JPH11509955 A5 JP H11509955A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US1996/007490 WO1997044791A1 (en) | 1996-05-22 | 1996-05-22 | Flash memory erase with controlled band-to-band tunneling current |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11509955A JPH11509955A (ja) | 1999-08-31 |
| JPH11509955A5 true JPH11509955A5 (enrdf_load_html_response) | 2004-07-15 |
| JP3848374B2 JP3848374B2 (ja) | 2006-11-22 |
Family
ID=22255145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54226097A Expired - Lifetime JP3848374B2 (ja) | 1996-05-22 | 1996-05-22 | フローティングゲートメモリの集積回路 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0840929B1 (enrdf_load_html_response) |
| JP (1) | JP3848374B2 (enrdf_load_html_response) |
| DE (1) | DE69618206T2 (enrdf_load_html_response) |
| WO (1) | WO1997044791A1 (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6385093B1 (en) * | 2001-03-30 | 2002-05-07 | Advanced Micro Devices, Inc. | I/O partitioning system and methodology to reduce band-to-band tunneling current during erase |
| TWI679647B (zh) * | 2019-01-24 | 2019-12-11 | 華邦電子股份有限公司 | 抹除方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0447595A (ja) * | 1990-06-15 | 1992-02-17 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| JP3105109B2 (ja) * | 1993-05-19 | 2000-10-30 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US5424993A (en) * | 1993-11-15 | 1995-06-13 | Micron Technology, Inc. | Programming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory device |
| US5416738A (en) * | 1994-05-27 | 1995-05-16 | Alliance Semiconductor Corporation | Single transistor flash EPROM cell and method of operation |
| US5487033A (en) * | 1994-06-28 | 1996-01-23 | Intel Corporation | Structure and method for low current programming of flash EEPROMS |
| US5485423A (en) * | 1994-10-11 | 1996-01-16 | Advanced Micro Devices, Inc. | Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS |
-
1996
- 1996-05-22 JP JP54226097A patent/JP3848374B2/ja not_active Expired - Lifetime
- 1996-05-22 EP EP96920413A patent/EP0840929B1/en not_active Expired - Lifetime
- 1996-05-22 DE DE69618206T patent/DE69618206T2/de not_active Expired - Lifetime
- 1996-05-22 WO PCT/US1996/007490 patent/WO1997044791A1/en active IP Right Grant