JPH1140492A - Wafer treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer treating device which can execute chemical treatment and heat treatment of a wafer by means of a single device and, in addition, can evenly heat-treat the wafer. SOLUTION: A wafer treating device is provided with a treating surface 3 which can be brought into contact with the full and of the lower surface of a wafer W, a heater 7 for heating the surface 3, and a turntable 4 having a conducting section 8 which supplies electric power to the heater 7 when the section 8 comes into contact with a feeding brush 12 connected to a power source. On the turntable 4, in addition, wafer supporting pins 2 composed of permanent magnets having N poles at their lower ends are arranged. The pins 2 are elevated/lowered against the turntable 4 when permanent magnets 16 having N-poles at their upper ends are elevated/lowered by driving an air cylinder 18.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a substrate processing apparatus for processing a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display panel, or a mask substrate for a semiconductor manufacturing apparatus.

[0002]

2. Description of the Related Art For example, in a substrate processing apparatus such as a resist coating apparatus for applying a resist to a substrate or a developing apparatus for supplying a developing solution to the substrate and developing the exposed resist, the resist or the developing solution is applied to the substrate. Before and after the chemical treatment for supplying and treating, a heat treatment such as a heat treatment for heating the substrate to increase the temperature or a cooling treatment for cooling the substrate to room temperature is performed. Then, in order to perform the chemical treatment and the heat treatment on the substrate, the substrate is sequentially transferred from the chemical treatment unit to the heat treatment unit by the substrate transfer device.

For this reason, a substrate processing apparatus for performing such a chemical processing and a heat treatment needs to include a chemical processing unit, a heat treatment unit, and a substrate transfer device. There is a problem that the substrate may be contaminated when the substrate is transferred by the substrate transfer device.

To solve such a problem, Japanese Patent Laid-Open Publication No.
Japanese Patent Application Laid-Open No. 2-193248 discloses a substrate processing apparatus in which a heating unit and a cooling unit are incorporated in a rotary table that holds and rotates a substrate in order to apply a resist to the substrate. In this substrate processing apparatus, a rotary table is rotated while a substrate is placed on a rotary table to apply a resist on the surface of the substrate, and then the substrate is heat-treated by a heating unit and a cooling unit, thereby forming a single substrate. The apparatus can perform a resist coating process and a heat treatment on the substrate.

[0005]

SUMMARY OF THE INVENTION Japanese Patent Laid-Open No. 62-1932
In the substrate processing apparatus disclosed in Japanese Patent Publication No. 48-48, the turntable is configured such that its surface dimension is smaller than the external dimensions of the substrate to be processed. this is,
This is because when the entire back surface of the substrate is in contact with the front surface of the rotary table, the substrate cannot be transferred between the transport device that holds and transports the lower surface of the substrate and the rotary table.

Therefore, in the substrate processing apparatus disclosed in Japanese Patent Application Laid-Open No. Sho 62-193248, there is a problem that it is impossible to uniformly heat treat the entire surface of the substrate.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and can perform a chemical solution treatment and a heat treatment on a substrate by a single apparatus, and can uniformly heat-treat the substrate. It is an object to provide a processing device.

[0008]

According to a first aspect of the present invention, there is provided a rotating apparatus having a processing surface which is in contact with or close to the entire lower surface of a substrate to be processed, and which rotates around a vertical rotation axis. A table, a heat treatment means disposed in the rotary table, for heating or cooling the processing surface, and moving up and down relatively to the rotary table, so that the back surface of the substrate is on the processing surface. The apparatus is characterized in that the apparatus further comprises elevating means for moving between a heat treatment position in contact with or close to the substrate and a transfer position of a substrate separated upward from the processing surface.

According to a second aspect of the present invention, in the first aspect of the present invention, the elevating means has a contact portion at its distal end which is in contact with an edge of the substrate and a peripheral edge of the lower surface. It is composed of

According to a third aspect of the present invention, in the second aspect of the present invention, at least a lower end of the substrate support pin is formed of a permanent magnet, and the lower end of the magnet disposed below the rotary table is provided. By the action, it moves up and down relatively to the rotary table.

According to a fourth aspect of the present invention, in the first aspect of the present invention, the cylindrical portion formed concentrically with the rotary shaft below the processing surface of the rotary table. A conductive portion formed on an outer peripheral surface of the column portion for supplying power to the heat treatment means, and a power supply brush for supplying power to the conductive portion by contacting a surface of the conductive portion. I have.

According to a fifth aspect of the present invention, in accordance with the fourth aspect of the present invention, a cylindrical member fixed around the cylindrical portion of the rotary table so as to surround the cylindrical portion, A magnetic fluid seal is further provided between the cylindrical member and the column above the contact portion with the power supply brush.

[0013]

Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are schematic diagrams of a substrate processing apparatus according to a first embodiment of the present invention. In addition,
Of these figures, FIG. 1 shows a state where the substrate support pins 2 have risen, and FIG. 2 shows a state where the substrate support pins 2 have fallen.

This substrate processing apparatus performs a resist coating process and a heat treatment on a substrate (semiconductor wafer) W, and has a rotary table 4 on which a substrate W can be placed on a processing surface 3 which is an upper surface thereof. The rotary table 4 is connected to a rotary shaft 6 that rotates about a vertical axis by driving a motor (not shown) at a cylindrical portion 5 formed below the rotary table 4. For this reason, the rotary table 4
Is rotated about the rotating shaft 6 by driving the rotating shaft 6.

The processing surface 3 of the rotary table 4 for heat-treating the substrate W is formed in a circular shape in plan view. The diameter of the processing surface 3 is larger than the diameter of the substrate W. Therefore, as shown in FIG.
When the substrate W is placed on the processing surface 3 of the turntable 4, the processing surface 3 contacts the entire lower surface of the substrate W.

In the turntable 4, a heater 7 as a heat treatment means is provided. The heater 7 heats the processing surface 3 of the turntable 4 to a temperature required for heat treatment of the substrate W.

The column 5 formed below the rotary table 4 has a shape concentric with the rotary shaft 6. At least the surface of the cylindrical portion 5 is made of an insulating material. A pair of conductive portions 8 connected to the heater 7 for supplying electric power to the heater 7 is formed on the outer peripheral surface of the column portion 5.

On the other hand, a cylindrical member 9 is provided outside the column 5 so as to surround the column 5.
The cylindrical member 9 is provided with a pair of power supply brushes 12 for supplying power to the conductive portion 8 by contacting the surface of the conductive portion 8. The power supply brush 12 is connected to a power supply (not shown). For this reason, the heater 7 built in the turntable 4 receives supply of power from a power supply via the power supply brush 12 and the conductive portion 8.

A magnetic fluid seal 13 is provided between the cylindrical member 9 and the column portion 5 above the contact portion between the conductive portion 8 and the power supply brush 12. As is well known, the magnetic fluid seal 13 forms a seal made of a magnetic fluid which is a fluid sensitive to magnetism around the cylindrical portion 5 by the action of a permanent magnet disposed in the magnetic fluid seal 13. is there.

For this reason, the magnetic fluid seal 13 and the cylindrical member 9 form an airtight chamber around the cylindrical portion 5 whose upper part is closed. Therefore, even when particles are generated from a contact portion between the conductive portion 8 and the power supply brush 12, the particles do not reach the substrate W placed on the rotary table 4. Note that, in order to more reliably prevent the diffusion of particles, the magnetic fluid seal 13 is used.
The interior of the airtight chamber formed by the cylindrical member 9 may be evacuated.

The rotary table 4 is provided with substrate support pins 2 which can be moved up and down through the rotary table 4 and a heater 7 built therein. Six board support pins 2 are provided along the outer peripheral portion of the substantially circular board W. As shown in FIGS. 1 and 2, the substrate support pins 2 have contact portions that contact the edges of the substrate W and the peripheral edge of the back surface. Further, a position restricting portion 14 is attached to the substrate supporting pin 2 so as to protrude laterally. And
The position restricting portion 14 is located in a space 15 formed in the turntable 4.

Below the substrate support pin 2, its upper end is N
Six permanent magnets 16 serving as poles are provided along the outer peripheral portion of the substantially circular substrate W so as to correspond to the respective substrate support pins 2. Each permanent magnet 16 is supported by a support member 17 connected to an air cylinder 18. For this reason, each permanent magnet 16 moves up and down in synchronization with the driving of the air cylinder 18. On the other hand, the lower end of the above-described substrate support pin 2 is N
It is a permanent magnet that forms a pole.

For this reason, as shown in FIG. 1, when the permanent magnet 16 is raised by driving the air cylinder 18,
The substrate support pin 2 is raised to a position where the position restricting portion 14 contacts the upper wall of the space 15. Also, as shown in FIG. 2, when the permanent magnet 16 is lowered by the driving of the air cylinder 18, the substrate support pins 2
4 descends to a position where it contacts the bottom wall of the space 15.

The substrate support pins 2 may be those having at least a lower end made of a permanent magnet, such as a permanent magnet provided below the substrate support pins 2.

Below the substrate support pins 2, 6
Instead of disposing the permanent magnets 16 along the outer periphery of the substantially circular substrate W so as to correspond to the respective substrate support pins 2, a permanent magnet formed in a circular shape may be used. in short,
It is sufficient that the permanent magnets are arranged in a substantially circular shape in plan view.

In the case where the substrate W is processed by the above-described substrate processing apparatus, the substrate supporting pins 2 are raised by driving the air cylinder 18 to raise the permanent magnet 16. Then, the substrate W to be processed is placed on the substrate support pins 2 by a substrate transport device (not shown). At this time, the substrate transport device (not shown) transports the substrate W while supporting the substrate W from its lower surface. However, since the substrate support pins 2 are raised as described above, the substrate is transferred from the substrate transport device to the substrate support pins 2. There is no problem in the delivery of the product.

Next, in this state, the resist supply nozzle (not shown) is moved to a position facing the surface of the substrate W supported by the substrate support pins 2, and the resist is dropped near the center of the surface of the substrate W. Then, the rotary table 4 is rotated at a high speed together with the substrate W supported by the substrate support pins 2. Thereby, the resist supplied to the surface of the substrate W is expanded along the surface of the substrate W by centrifugal force, and a thin film of the resist is formed on the surface of the substrate W.

At this time, since the edge of the substrate W and the peripheral edge of the lower surface are supported by the contact portions of the substrate support pins 2, even when the substrate W is rotated at a high speed, the substrate W The support state of W is maintained.

When the application of the resist on the surface of the substrate W is completed, the permanent magnet 16 is lowered by driving the air cylinder 18 to lower the substrate support pins 2 as shown in FIG. Thus, the substrate W supported by the substrate support pins 2 is placed on the processing surface 3 of the turntable 4. Further, the processing surface 3 is heated by supplying electric power to the heater 7 built in the turntable 4 through the power supply brush 12 and the conductive portion 8.

Thus, the substrate W is heated by the processing surface of the turntable 4. At this time, as described above, the diameter of the processing surface 3 is larger than the diameter of the substrate W, and the processing surface 3 is in contact with the entire lower surface of the substrate W. As a result, the substrate W can be uniformly heat-treated.

By forming a groove or the like on the processing surface 3 of the rotary table 4, the substrate W may be easily lowered onto the processing surface 3. In order to uniformly process the substrate W, in short, the processing surface 3 has a size equal to or larger than the substrate W, and the substrate W is in contact with the processing surface 3 over substantially the entire lower surface thereof. I just need. In this specification, the entire lower surface is an expression including a case where a non-contact portion such as the above-described groove portion is partially provided.

In the heat treatment step, power is supplied to the heater 7 for heating the substrate W through the power supply brush 12 and the conductive portion 8. Therefore, electric power can be supplied to the heater 7 disposed in the rotary table 4 rotating at a high speed with a simple configuration.

Since the conductive portion 8 and the power supply brush 12 are housed in an airtight chamber formed by the magnetic fluid seal 13 and the cylindrical member 9, the conductive portion 8 and the power supply brush 12 slide. Even when particles are generated, the particles do not reach the substrate W being processed.

When the heat treatment on the substrate W is completed, the substrate supporting pins 2 are raised again to separate the substrate W supported thereon from the processing surface 3 of the turntable 4. Then, the substrate W to be processed is supported from below by a substrate transfer device (not shown) and transferred to the next processing step.

As described above, according to the above-described substrate processing apparatus, the resist coating process and the heating process on the substrate W can be executed by a single device. At this time, since the entire surface of the substrate W can be heated by the processing surface 3 in contact therewith, it is possible to uniformly heat-treat the substrate. Further, since the substrate support pins 2 for moving the substrate W between the transfer position and the heat treatment position are moved up and down by the action of the electromagnet 16, the substrate support pins 2 disposed on the rotating table 4 rotating at a high speed can be easily moved. It is possible to drive up and down.

In the above-described embodiment, the resist is applied to the substrate W in a state where the substrate W is raised by the substrate support pins 2 for pointing the substrate W. The resist may be applied to the substrate W while being in contact with the surface 3.

Next, another embodiment of the present invention will be described. FIG. 3 is a schematic diagram of a substrate processing apparatus according to a second embodiment of the present invention. In addition, the first shown in FIGS.
For the same members as the substrate processing apparatus according to the embodiment,
The same reference numerals are given and the detailed description is omitted.

The substrate processing apparatus according to the second embodiment comprises:
Instead of the heater 7 for heating the processing surface 3, the processing surface 3
This embodiment differs from the first embodiment shown in FIGS. 1 and 2 in that a Peltier element 27 for cooling the heat sink and a heat radiating member 28 are provided.

That is, in the substrate processing apparatus according to the second embodiment, the Peltier element 27 for cooling the processing surface 3 and the heat generated by the Peltier element 27 are externally provided in the space inside the turntable 4. And a heat dissipating member 28 for diverging the heat. This heat dissipation member 28
Has a plurality of legs that penetrate the cylindrical portion 5 of the turntable 4, and the legs generate heat generated by the Peltier element 27 into an airtight chamber formed by the magnetic fluid seal 13 and the cylindrical member 9. It is configured to diverge. In addition, the conductive portion 8 formed on the outer peripheral surface of the cylindrical portion 5
It is connected to a Peltier element 27.

In the substrate processing apparatus according to the second embodiment, the resist coating process for the substrate W is performed in the same manner as the above-described substrate processing apparatus according to the first embodiment except that the cooling process is performed before the resist coating process. And a cooling process. At this time, since the entire surface of the substrate W can be cooled by the processing surface 3 in contact therewith, it is possible to uniformly heat-treat the substrate.

In the above-described embodiment, the case where the substrate W is heat-treated while the lower surface of the substrate W is in contact with the processing surface 3 of the turntable 4 has been described. A so-called proximity method in which the substrate W is heat-treated in a state in which the substrate W is separated by a minute distance may be employed. Also in this case, since the substrate W is arranged close to the processing surface 3 over the entire lower surface thereof, it is possible to uniformly heat-treat the substrate W.

In the above-described embodiment, the substrate support pins 2 are moved up and down with respect to the turntable 4. However, the structure may be such that the substrate support pins 2 are fixed and the turntable 4 is moved up and down.

In the above-described embodiment, the permanent magnet 16 is used to raise and lower the substrate support pins 2, but an electromagnet may be used instead of the permanent magnet 16. In this case, by controlling the current applied to the electromagnet, the air cylinder 18 can be omitted.

In the above-described embodiment, the case where the substrate W is heat-treated by actively heating or cooling the substrate W by the heater 7 or the Peltier element 27 has been described. The heater 7 or the Peltier element 27 may be used for the purpose of maintaining the temperature of No. 3 constant.

In the above-described embodiment, the case has been described in which either the heater 7 or the Peltier element 27 is provided on the turntable 4 to heat or cool the processing surface 3 of the turntable 4. Rotary table 4
In addition, both the heater 7 and the Peltier element 27 may be provided to selectively heat or cool the processing surface 3 of the turntable 4. Further, by controlling the current applied to the Peltier element 27, the heating and cooling of the processing surface 3 can be performed by the Peltier element 27.

Further, in the above-described embodiment,
Although the case where the present invention is applied to a substrate processing apparatus that performs resist coating processing and heat treatment on a substrate (semiconductor wafer) W has been described, the present invention is applicable to a substrate processing apparatus that performs various processing on various substrates. Can also be applied.

[0047]

According to the first aspect of the present invention, the rotary table has a processing surface in contact with or close to the entire lower surface of the substrate to be processed, and moves up and down relatively to the rotary table. Accordingly, since the apparatus is provided with the elevating means for moving the substrate between the heat treatment position and the transfer position, the chemical solution treatment and the heat treatment for the substrate can be performed by a single device, and the substrate is uniformly heat treated. be able to.

According to the second aspect of the present invention, since the elevating means is constituted by the substrate supporting pins having the contact portions that contact the edge of the substrate and the peripheral edge of the lower surface, the substrate is rotated together with the turntable. In this case, the substrate can be reliably supported by the substrate support pins.

According to the third aspect of the present invention, at least the lower end of the substrate support pin is formed of a permanent magnet,
The substrate is vertically moved relative to the rotary table by the action of the magnet disposed below the rotary table, so that the substrate support pins provided on the rotary table can be easily driven up and down.

According to the fourth aspect of the present invention, power is supplied to the heat treatment means by the conductive portion formed on the outer peripheral surface of the cylindrical portion and the power supply brush for supplying power to the conductive portion by contacting the surface of the conductive portion. , Power can be supplied to the heat treatment means disposed in the rotary table with a simple configuration.

According to the fifth aspect of the present invention, since there is provided the cylindrical member fixedly surrounding the cylindrical portion and the magnetic fluid seal provided between the cylindrical member and the cylindrical portion, the conductive material is provided. Even when particles are generated by sliding between the unit and the power supply brush, it is possible to prevent the particles from reaching the substrate.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a state where a substrate support pin of a substrate processing apparatus according to a first embodiment of the present invention has been raised.

FIG. 2 is a schematic diagram showing a state where substrate support pins of the substrate processing apparatus according to the first embodiment of the present invention have been lowered.

FIG. 3 is a schematic diagram showing a state in which a substrate support pin of a substrate processing apparatus according to a second embodiment of the present invention is lowered.

[Explanation of symbols]

 2 Substrate Support Pin 3 Processing Surface 4 Rotary Table 5 Cylindrical Portion 6 Rotary Shaft 7 Heater 8 Conductive Portion 9 Cylindrical Member 12 Power Supply Brush 13 Magnetic Fluid Seal 16 Permanent Magnet 17 Supporting Member 18 Air Cylinder 27 Peltier Element 28 Heat Dissipating Member W Substrate

────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/30 567 (72) Inventor Yasuo Imanishi 322 Hazukashi Furukawa-cho, Fushimi-ku, Kyoto Dainichi Screen Manufacturing Co., Ltd. (72) Inventor Masao Tsuji 322 Hashinashi Furukawa-cho, Fushimi-ku, Kyoto, Japan Daikinhon Screen Manufacturing Co., Ltd. Inside the Rakusai Office (72) Inventor J 讓 ichi Nishimura, 322 Hashinashi Furukawacho, Fushimi-ku, Kyoto, Japan Dainichi Screen Manufacturing Co., Ltd. The Screen Manufacturing Co., Ltd. Rakusai Office

Claims (5)

[Claims] 1. A rotary table having a processing surface in contact with or close to the entire lower surface of a substrate to be processed, and rotating around a vertical rotation axis, and disposed in the rotary table, Heat treatment means for heating or cooling the processing surface; and by vertically moving relative to the rotary table, the substrate is moved from the heat treatment position where the back surface abuts or approaches the processing surface; A lifting / lowering means for moving the substrate to and from a transfer position of a substrate separated upward. 2. The substrate processing apparatus according to claim 1, wherein the elevating means includes a substrate support pin having a contact portion at a tip end thereof for contacting an edge of the substrate and a peripheral edge of a lower surface. Processing equipment. 3. The substrate processing apparatus according to claim 2, wherein at least a lower end of the substrate support pin is formed of a permanent magnet, and the rotary table is operated by a magnet disposed below the rotary table. A substrate processing apparatus that moves relatively up and down with respect to. 4. The substrate processing apparatus according to claim 1, wherein a column portion formed concentrically with the rotation shaft below the processing surface of the rotary table, and the heat treatment unit. A substrate processing apparatus further comprising: a conductive portion formed on an outer peripheral surface of the cylindrical portion to supply power to the conductive portion; and a power supply brush for supplying power to the conductive portion by contacting a surface of the conductive portion. 5. The substrate processing apparatus according to claim 4, wherein a cylindrical member fixed around the cylindrical portion of the rotary table so as to surround the cylindrical portion, and a contact between the conductive portion and a power supply brush. Above the part
A magnetic fluid seal disposed between the cylindrical member and the columnar part.