JPH11345895A - Semiconductor device, lead frame and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a lead-less surface mounted package using a metal plate and has high reliability capable of handling multi-pin situation. SOLUTION: This device is provided with a semiconductor chip 1a, bonding pads 2a which are bonded with electrodes of the semiconductor chip 1a, inner leads 4a which are integrally formed below the bonding pads 2a, mount bonding electrodes 5 which are formed integrally below the inner leads 4a and of which at least a part overlaps, a protective film from which mount bonding electrodes 5 are exposed, encapsulating resin 7 which encapsulates over a protecting film 6 and soldering balls 8, which are formed on the mount bonding electrodes 5. The soldering balls 8 are arranged on the lower surface of the semiconductor device via the inner leads 4a which are encapsulated by the resin and the mount bonding electrodes 5 which are fixed by the protecting film 6, regardless of the position of the bonding pads 2a, so that the semiconductor device which can correspond to making multi-pin and has a high reliability is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a lead frame, and a method of manufacturing the same, and more particularly to a semiconductor device, a lead frame, and a leadless surface mount package using a metal plate.
The present invention relates to a resin-encapsulated semiconductor device including a land grid array type, a lead frame used in the semiconductor device, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, with the miniaturization of electronic devices, the pitch of leads provided in a resin-sealed semiconductor device has tended to become smaller. Therefore, a new structure and a new manufacturing method are required for the resin-sealed semiconductor device.

Hereinafter, a conventional semiconductor device and a method of manufacturing the same will be described with reference to FIG. FIG. 9 is a sectional view of a conventional semiconductor device. In FIG. 9, the substrate 11
The semiconductor chip 120 is mounted on the upper surface of the semiconductor chip 120, and a wiring pattern for the semiconductor chip 120 is formed around the semiconductor chip 120. Of the wiring patterns, the through holes 140 are formed in the thickness direction of the substrate 110 for the input / output pattern 130 used for connection to the outside of the semiconductor device, that is, to another substrate. On the lower surface of the substrate 110, a wiring pattern 150 is formed connected to the conductive plating 160 in the through hole 140. That is, the wiring pattern 150 and the input / output pattern 130
Are electrically connected via the conductive plating 160 in the through hole 140. In addition, the semiconductor chip 120
Of the pad (not shown) and the input / output pattern 130
They are electrically connected via bonding wires 170. Then, after electrically connecting the pads of the semiconductor chip 120 and the input / output patterns 130 with the bonding wires 170, the resin (not shown) is applied to cover the semiconductor chips 120, the bonding wires 170, and the input / output patterns 130. ), The upper surface of the substrate 110 is molded. By performing the packaging in this manner, one semiconductor device is completed.

[0004]

However, the above-described conventional semiconductor device and its manufacturing method have the following problems. First, on the upper surface of the substrate 110, the input / output pattern 130 needs a region required for wire bonding and a region required for the through hole 140, and thus there is a limit to miniaturization of the semiconductor device. Next, the substrate 1
On the lower surface of 10, the wiring pattern 150 needs a region necessary for connection to the outside and a region necessary for the through hole 140, so that there is a limit to the miniaturization of the semiconductor device and to cope with the increase in the number of pins. Was difficult.

SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, the present invention provides a semiconductor device including a land grid array type which can cope with an increase in the number of pins and has a small area.
An object of the present invention is to provide a lead frame used for the semiconductor device and a method for manufacturing the lead frame.

[0006]

In order to achieve the above object, a semiconductor device according to the present invention comprises a semiconductor chip having a plurality of electrodes on a main surface, and a signal between an electrode and a connection terminal of an external device. A semiconductor chip, an inner lead electrically connected to each of the electrodes, and an inner lead for transmitting and receiving signals between the electrodes and the external terminals. An external terminal provided in contact with the lower surface of the external terminal, an insulating protective film that exposes the bottom surface of the external terminal and supports the semiconductor chip and the inner lead, and seals the semiconductor chip and the inner lead on the insulating protective film. And a sealing resin for stopping.

Thus, external terminals are formed on the lower surface of the semiconductor device without being restricted by the inner leads in terms of planarity. Therefore, since the external terminals are freely arranged, a semiconductor device which can cope with an increase in the number of pins and a reduction in the area is realized. Further, since the inner leads electrically connected to the electrodes of the semiconductor device are sealed with the sealing resin, a semiconductor device with improved reliability of connection to the electrodes is realized.

In the semiconductor device of the present invention, it is preferable that the thickness of the insulating protective film is smaller than the thickness of the inner lead.

Thus, a semiconductor device whose height after mounting can be further reduced is realized.

In the semiconductor device of the present invention, the thickness of the external terminal may be equal to or greater than the thickness of the insulating protective film.

As a result, a semiconductor device in which the external terminal is more reliably connected to the connection terminal of the external device is realized.

In the semiconductor device of the present invention, the electrode and the inner lead may be electrically connected via a bonding pad provided in contact with the upper surface of the inner lead.

Thus, since the inner leads and the bonding pads can be made of different materials, the electrodes of the semiconductor device and the inner leads are reliably connected via the bonding pads made of a material suitable for connection.

In the semiconductor device of the present invention, the bonding pad may be made of a material having a resist function with respect to an etching solution for dissolving the inner leads.

Thus, since the inner leads are formed using the bonding pads as an etching resist, a semiconductor device in which the inner leads are reliably provided below the bonding pads is realized.

In the semiconductor device according to the present invention, the semiconductor chip may be mounted over a plurality of inner leads via an insulating material.

Thus, the back surface of the semiconductor chip is reliably insulated from the inner leads, and the semiconductor chip is mounted on the plurality of inner leads.

In the semiconductor device of the present invention, the external terminals may be arranged in a lattice on the lower surface of the semiconductor device when viewed in plan.

As a result, since the external terminals are arranged by effectively utilizing the lower surface of the semiconductor device, a semiconductor device capable of coping with an increase in the number of pins and a reduction in the area is realized.

The semiconductor device of the present invention may further include a protruding electrode connected to the external terminal.

As a result, a semiconductor device which is reliably connected to the connection terminal of the external device via the protruding electrode is realized.

The lead frame of the present invention is provided so as to be in contact with the inner lead made of a metal, a metal frame provided outside the inner lead with a predetermined gap from the inner lead, and the lower surface of the inner lead. An external terminal, and an insulating protective film that supports the inner lead and the frame and exposes the lower surface of the external terminal are provided.

Thus, by having the external terminals formed without being restricted by the plane of the inner leads, the number of pins and the area of the semiconductor device can be reduced, and the insulating protective film can be formed. Thus, a lead frame that reliably holds the inner leads is realized.

In the lead frame of the present invention, a bonding pad made of a metal which is provided in contact with the upper surface of the inner lead, is electrically connected to the electrode of the semiconductor chip, and has a resist function for an etching solution for dissolving the inner lead. May be further provided.

Thus, since the metal plate is etched using the bonding pad as an etching resist, a lead frame provided with the bonding pad and having inner leads with good dimensional accuracy is realized.

According to the method of manufacturing a semiconductor device of the present invention, a semiconductor device having a plurality of electrodes is mounted on a lead frame having an insulating protective film for holding inner leads and a frame. A method of manufacturing a device, comprising: a first step of mounting a semiconductor chip in a region inside a frame, a second step of electrically connecting electrodes and inner leads, respectively, A third step of forming a resin package by sealing the semiconductor chip and the inner lead with a resin in the region, and forming an insulating protective film exposing an external terminal provided in contact with the lower surface of the inner lead with a resin. Cutting along the outer periphery of the package body to separate the resin package body from the frame.

Thus, since the insulating protective film is separated along the outer periphery of the resin package, the semiconductor package without resin burrs can be manufactured by easily separating the resin package from the frame. Further, it is possible to manufacture a semiconductor device having external terminals arranged on the lower surface of the semiconductor device without being restricted by the planar position of the bonding pad.

In the method of manufacturing a semiconductor device according to the present invention,
In the second step, the electrode and the inner lead are electrically connected via a bonding pad provided in contact with the upper surface of the inner lead, and the bonding pad is exposed to an etching solution that dissolves the inner lead. It may be made of a material having a function.

Thus, since the inner leads are formed using the bonding pads as the etching resist, a semiconductor device having the inner leads reliably provided below the bonding pads can be manufactured.

In the method of manufacturing a semiconductor device according to the present invention,
After the third step, a step of forming a protruding electrode on the external terminal may be further provided.

As a result, it is possible to manufacture a semiconductor device that is reliably connected to the connection terminals of the external device via the protruding electrodes.

The method for manufacturing a lead frame according to the present invention comprises the following steps: a first step of applying a resist film to both surfaces of a metal plate, and at least one of both surfaces of the metal plate.
A second step of forming a first opening in the resist film in a region where an external terminal is to be formed, a third step of forming a first metal film on a metal plate in the first opening, A fourth step of removing the resist film on the other surface; and removing a predetermined region of the metal plate from the side of the other surface to form inner leads in contact with the upper surface of the first metal film. And a fifth step of forming an insulating protective film made of a resist film on the surface.

As a result, the external terminals are formed on one side without being restricted by the plane of the inner leads, so that the number of pins and the area of the semiconductor device can be reduced, and the insulation protection can be achieved. A lead frame in which the film securely holds the inner leads can be manufactured.

In the method for manufacturing a lead frame according to the present invention, in the second step, the second and third openings are formed in the resist film in the region where the frame and the inner lead are formed on the other surface of the metal plate. In the third step, second and third metal films are further formed in the second and third openings, respectively. In the fifth step, the second and third metal films are used as etching resists. The metal plate may be etched.

Thus, the metal plate is etched by using the second and third metal films as an etching resist to form the frame and the inner leads, respectively. Therefore, it is possible to manufacture a lead frame having a frame with good dimensional accuracy and inner leads.

In the method for manufacturing a lead frame according to the present invention, in the first step, first and second resist films made of different materials are formed on one surface and the other surface, respectively. The metal plate may be etched from both sides using an etchant that dissolves only the second resist film to remove the second resist film.

Thus, when removing the second resist film from the other surface of the metal plate, both surfaces of the metal plate may be etched at the same time, so that a lead frame can be manufactured by a simplified process.

[0038]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device according to the present invention,
The lead frames and their manufacturing methods will be described with reference to the drawings.

(First Embodiment) FIG. 1A is a sectional view of a semiconductor device according to a first embodiment of the present invention, and FIG.
FIG. 2 is a bottom view of the semiconductor device of FIG. FIG.
(A) is a cross-sectional view taken along line II of FIG. 1 (b). Here, the lower surface of the semiconductor device is a mounting surface, that is, a surface connected to an external device such as a printed circuit board.

1A and 1B, reference numeral 1a denotes a semiconductor chip having an electrode (not shown) on a main surface, 2a denotes a bonding pad made of a metal film and electrically connected to the electrode of the semiconductor chip, Is a diameter φ20 for electrically connecting the electrode of the semiconductor chip and the bonding pad 2a.
-30 μm thin metal wire, 4a is bonding pad 2a
5 is a mounting connection electrode made of a metal film and provided integrally and partly below the inner lead 4a, and 6 is a lower surface of the semiconductor device. , A protective film provided to expose the lower surface of the mounting connection electrode 5 and to cover the other portions and to have an insulating property; and 7 for sealing the semiconductor chip 1a, the fine metal wires 3, and the inner leads 4a on the protective film 6. Is a solder ball made of lead-free solder welded to the lower surface of the mounting connection electrode 5.

Here, the thickness of each element of the semiconductor device of this embodiment is such that the semiconductor chip 1a has a thickness of 0.10 to 0.3.
0 mm, bonding pad 2a is 0.01 to 0.10
mm, the inner lead 4a is 0.05 to 0.20 mm,
Mounting connection electrode 5 is 0.01 to 0.10 mm, protective film 6
Is 0.01 to 0.10 mm, and the sealing resin 7 is 0.40 to
1.00 mm. Here, for example, the thickness of each element is set to 0.1 mm for the inner lead 4a and 0.05 mm for the metal film, that is, the bonding pad 2a and the mounting connection electrode 5.
mm, the semiconductor chip 1a was 0.3 mm, and the thickness of the sealing resin 7 from the upper surface of the protective film 6 was 0.65 mm. The total thickness of the semiconductor device was set to 0.7 mm, and the height of the semiconductor device from the mounting surface after being mounted on the external device was set to 0.8 mm.

The semiconductor device of this embodiment is characterized in that the mounting connection electrode 5 is provided on the lower surface of the inner lead 4a provided integrally with the bonding pad 2a so that at least a part of the inner lead 4a overlaps the inner lead 4a. The protection film 6 is provided integrally with the lower surface of the mounting connection electrode 5 so as to be exposed, and the upper part of the protection film 6 is sealed with a sealing resin 7. Thereby, the mounting connection electrode 5 is freely arranged on the lower surface of the semiconductor device without using a through hole without being restricted by a plane due to the position of the bonding pad 2a. A semiconductor device which can cope with the above is realized.

Further, of the integrally formed bonding pad 2a, inner lead 4a and mounting connection electrode 5, the bonding pad 2a connected to the electrode of the semiconductor chip 1a and the inner lead 4a are sealed with the sealing resin 7. And the mounting connection electrode 5 is provided on the side surface with the protective film 6.
Is fixed by Therefore, bonding pad 2
The reliability of the connection with the thin metal wire 3 in (a) and the connection with the external device via the solder ball 8 in the mounting connection electrode 5 is improved.

FIG. 2A is a sectional view of a lead frame used in the semiconductor device of FIG. 1, and FIG. 2B is a bottom view of the lead frame of FIG. 2A. Here, the lower surface of the lead frame is the lower surface of the semiconductor device, that is, the surface connected to an external device such as a printed circuit board. FIG.
FIG. 2A is a cross-sectional view taken along the line II-II in FIG. 2A and 2B, the same components as those shown in FIG. 1 are denoted by the same reference numerals as those in FIG. 1, and the description thereof will be omitted.

In FIGS. 2A and 2B, reference numeral 4b denotes a frame composed of a metal portion sandwiched between the metal film for frame 2b and the protective film 6. The frame frame 4b is provided with a gap 9 having a width of, for example, 0.10 to 0.20 mm to allow the sealing resin to enter from the inner lead 4a to the outside, and has a thickness of 0.05 to 0.20 mm. ing. As the material of the inner lead 4a and the frame 4b, that is, the material of the metal plate which is the base material of the lead frame, 42 alloy (4
2% nickel-iron alloy) or a copper alloy material is used. The mounting connection electrode 5 and the protective film 6 have the same thickness.

Here, the feature of the lead frame of this embodiment is that the frame 4b is formed apart from the inner lead 4a by a predetermined width, ie, 0.10 to 0.20 mm, to the outside of the inner lead 4a. , Frame 4b
And the inner leads 4a and between the inner leads 4a are connected by the protective film 6. Thereby, when manufacturing the semiconductor device by mounting the semiconductor chip on the protective film 6 between the inner leads 4a, a lead frame in which the sealing resin is reliably filled in the gap 9 is obtained.

FIG. 3A is a plan view of the lead frame shown in FIG. 2, and FIG. 3B is a sectional view of the lead frame of FIG. 3A taken along the line III-III. Here, the upper surface of the lead frame is the upper surface of the semiconductor device, that is, the surface on which the semiconductor chip is mounted. 3A and 3B,
The same components as those shown in FIG. 2 are denoted by the same reference numerals as those in FIG. 2, and description thereof will be omitted.

Hereinafter, a method for manufacturing a lead frame according to this embodiment will be described with reference to FIGS. 4A to 4F are cross-sectional views illustrating respective steps of the method for manufacturing a lead frame according to the present embodiment.

First, as shown in FIG. 4B, for example, a photosensitive resist is applied to both surfaces of the metal plate 40 made of the 42 alloy or copper alloy material shown in FIG. The films 60a and 60b are respectively formed.

Next, as shown in FIG. 4C, the resist films 60a, 60b having photosensitivity are applied to the resist films 60a, 60b by photolithography.
Are respectively removed. Here, each resist film is removed such that at least a part of the portion from which the resist films 60a and 60b have been removed overlaps at least.

Next, as shown in FIG. 4D, the metal film 50 is provided on the portion where the resist film 60a is removed, and the metal films 20a and 20 are provided on the portion where the resist film 60b is removed.
b is formed respectively. The formation of these metal films is performed using, for example, a plating method.

Here, as a material of the metal films 20a and 20b, a material functioning as an etching resist for an etching solution for dissolving the metal plate 40, for example, Au, P
By combining d, Ni and the like, Ni is used as a base and Au or Pd is used as a surface layer. And, as the etchant, from the commonly used ferric chloride solution, cupric chloride solution, alkali etchant, hydrogen peroxide-sulfuric acid based etchant, etc., the combination of the material of the metal film and the resist film is used. Determined accordingly.

Next, as shown in FIG. 4E, the resist film 60b is removed from the upper surface of the metal plate 40, and the bonding pad 2a made of the metal film 20a and the metal film 20 are removed.
b) and a metal film 2b for a frame made of b. Then, on the lower surface of the metal plate 40, the resist film 60a is left as it is, and the side surface is fixed by the protective film 6 made of the resist film 60a to form the mounting connection electrode 5 made of the metal film 50. Here, the resist film 60 is formed using different materials.
a, 60b are formed in advance, and each resist film 60a, 60b is formed using an etching solution that dissolves only the resist film 60b and does not dissolve the resist film 60a.
May be etched. Thus, the resist film 60b can be completely removed from the upper surface of the metal plate 40, and the resist film 60a can be left as it is on the lower surface.

Here, as the resist films 60a and 60b, a dry film, an ink, an electrodeposition film or the like, which is an organic resist, is used. And, for example, in the case of a dry film that is an alkali-soluble type resist,
An aqueous solution of sodium hydroxide or an aqueous solution of potassium hydroxide is used as a stripping solution.

Next, as shown in FIG. 4 (f), the metal plate 40 other than the portion where the bonding pad 2a and the frame frame metal film 2b are formed is melted from the upper surface side. Etch 40. Here, as described above, the metal films 20a and 20b, that is, the bonding pads 2a and the frame-frame metal film 2b function as an etching resist for an etching solution that dissolves the metal plate 40. By this step, the frame 4b sandwiched between the protective film 6 and the metal film 2b for a frame, and the inner lead 4a sandwiched between the mounting connection electrode 5, the protective film 6 and the bonding pad 2a are Each is formed integrally. At the same time, a gap 9 is formed between the inner lead 4a and the frame 4b. Through the above steps, the lead frame according to the present embodiment is completed.

Here, the first feature of the lead frame manufacturing method according to the present embodiment is that each of the resist films 60a and 60b provided on both surfaces of the metal plate 40 has a plurality of functions. That is, each of the resist films 60a and 60b
It functions as, for example, a plating resist when forming the metal films 20a, 20b, 50. Further, the protective film 6 made of the resist film 60a is
and b functions as a carrier for supporting b.

The second feature of the method for manufacturing a lead frame according to the present embodiment is that the bonding pad 2a and the metal film 2b for the frame frame are formed by etching the metal plate 40 to form the inner lead 4a and the frame frame 4b. It functions as an etching resist for forming the gap 9.

Therefore, according to the present embodiment, for the metal plate 40 made of the same 42 alloy or copper alloy material as the conventional one, the resist film formation, the resist film removal, the metal film formation, The lead frame according to the present invention can be manufactured by applying the respective steps of metal plate etching. Thus, the lead frame according to the present invention can be manufactured using the same material as the conventional one, that is, a low-cost material, and using the same production conditions and equipment as the conventional one.

Hereinafter, a method for manufacturing a semiconductor device according to the present embodiment will be described with reference to FIGS.
5A to 5F are cross-sectional views illustrating respective steps of the method for manufacturing a semiconductor device according to the present embodiment. FIG.
4A to 4F, the same components as those shown in FIG. 4 are denoted by the same reference numerals as those in FIG. 4, and the description thereof will be omitted.

First, in the lead frame shown in FIG. 5A, a bonding paste (not shown) is applied on the protective film 6 in a region between the inner leads 4a as shown in FIG. 5B. And the semiconductor chip 1a is mounted thereon.

Next, as shown in FIG. 5C, an electrode (not shown) provided on the main surface of the semiconductor chip 1a and the bonding pad 2a are electrically connected using the thin metal wire 3. Connecting.

Next, as shown in FIG. 5D, the semiconductor chip 1 is formed on the protective film 6 by using the sealing resin 7.
a, the fine metal wires 3, the inner leads 4a, and the gaps 9 are sealed. Thereby, the gap 9 can be reliably filled with the sealing resin 7.

Next, as shown in FIG. 5E, a solder ball 8 made of, for example, a Sn-Bi or Sn-Bi-Ag material is welded to the mounting connection electrode 5.

Next, as shown in FIG. 5F, the semiconductor device is separated from the frame 4b at the interface between the frame 4b of the lead frame and the sealing resin 7. Through the above steps, the semiconductor device according to the present embodiment can be completed.

Hereinafter, the step of separating the semiconductor device from the lead frame will be described in detail with reference to FIGS. 6 (a) and 6 (b). FIG. 6A is a cross-sectional view illustrating a state before the semiconductor device is separated from the lead frame, and FIG. 6B is a cross-sectional view illustrating a completed semiconductor device separated from the lead frame. In FIG. 6A, reference numeral 10 denotes a punching punch, 11 denotes a relief portion which is a space provided in the punching punch 10, 12 denotes a stripper, and 13 denotes a punching die.

According to the semiconductor device manufacturing method of the present embodiment, the punch 10 punches the lead frame with the frame 4b sandwiched between the stripper 12 and the punching die 13. Thereby, the frame 4b
The semiconductor device is separated from the frame 4b at the interface between the semiconductor device and the sealing resin 7.

Here, the inner lead 4a of the lead frame is connected to the frame 4b only by the protective film 6 and the sealing resin 7. Therefore, by separating the sealing resin 7 from the frame 4b and separating the protective film 6 at the interface between the frame 4b and the sealing resin 7 without separating the metal part, the resin-sealed semiconductor device can be manufactured. Finalize. This makes it possible to manufacture a semiconductor device in which resin burrs and inner lead burrs are less likely to occur on the completed side surface.

In this embodiment, as shown in FIG. 1, the case where the mounting connection electrode 5 is included below the inner lead 4a in plan view has been described. The present invention is not limited to this, and the mounting connection electrode 5 may be formed below the inner lead 4a so that at least a part of the mounting connection electrode 5 is included in a plan view. Especially,
It is preferable to form the mounting connection electrode 5 so as to extend to the inside of the semiconductor device, and to form a solder ball 8 at the tip of the mounting connection electrode 5. In this case, the mounting connection electrode 5 is used as a wiring pattern, and the solder ball 8 is formed below the semiconductor chip.
Further, a semiconductor device capable of increasing the number of pins and reducing the area is realized.

When manufacturing the lead frame, the resist film 60a in FIG. 4B and the metal film 50 in FIG. 4D are insoluble in an etching solution for melting the metal plate 40. Each of them may be formed using a material. In this case, the metal plate 40 in FIG.
Since the metal plate 40 can be etched by immersing both surfaces in an etching solution, the process is simplified.

(Second Embodiment) A semiconductor device according to a second embodiment of the present invention will be described with reference to FIGS. 7 (a) to 7 (c). 7A is a cross-sectional view of the semiconductor device according to the present embodiment, FIG. 7B is a cross-sectional view taken along a cutting line different from FIG. 7A, and FIG. 13 is a bottom view of the semiconductor device according to FIG. FIG.
In (c), the same components as those in the first embodiment are denoted by the same reference numerals as those in FIG. 1, and the description thereof is omitted. In addition, FIG.
FIG. 7B is a sectional view taken along the line VIIA-VIIA in FIG.
FIG. 8 is a sectional view taken along line VIIB-VIIB in FIG.

Here, the lower surface of the semiconductor device is a mounting surface, that is, a surface connected to an external device such as a printed circuit board. Further, the thickness of each component, and the target overall thickness and mounting height of the semiconductor device were set to the same values as in the first embodiment.

The difference between the semiconductor device of this embodiment and the semiconductor device of the first embodiment is that
This is a point that the mounting connection electrodes 5 included in each a are formed so as to be located separately on the outer peripheral side and the center line side of the semiconductor device. Therefore, as shown in FIG. 7C, the solder balls 8 welded to the mounting connection electrodes 5 are alternately arranged in a so-called staggered two rows. This realizes a land grid array type semiconductor device in which external terminals are more effectively arranged on the lower surface of the semiconductor device.

(Third Embodiment) A semiconductor device according to a third embodiment of the present invention will be described with reference to FIGS. FIG. 8A is a cross-sectional view of the semiconductor device according to the present embodiment, and FIG. 8B is a bottom view of the semiconductor device according to the present embodiment. 8A and 8B, the same components as those in the first embodiment are denoted by the same reference numerals as those in FIG. 1 and the description thereof is omitted. FIG. 8A shows VIII-VIII in FIG. 8B.
It is sectional drawing in a line.

In FIG. 8, the semiconductor chip 1b having a thickness of 0.10 to 0.20 mm is
It is mounted on the bonding pad 2a by an adhesive tape 14 having a thickness of mm. Below the bonding pad 2a, integrally with the bonding pad 2a,
An inner lead 4a is formed below the semiconductor chip 1b toward its center line. Below the inner lead 4a, a mounting connection electrode 5 is formed integrally with the inner lead 4a.

Here, the mounting connection electrode 5 is separated from the center line of the semiconductor device by three different distances, and adjacent mounting connection electrodes 5 are different in distance from the center line of the semiconductor device. And placed. That is, the mounting connection electrodes 5 are arranged as shown on the left and right sides of the semiconductor device in FIG.
Therefore, on the lower surface of the semiconductor device including the region below the semiconductor chip 1b, the solder balls 8 welded to the mounting connection electrodes 5 are arranged in three rows.

In this embodiment, for example, the thickness of each element is
The inner lead 4a is 0.1 mm, the metal film, that is, the bonding pad 2a and the mounting connection electrode 5 are 0.05 m.
m, the semiconductor chip 1b was 0.2 mm, and the thickness of the sealing resin 7 from the upper surface of the protective film 6 was 0.65 mm. Then, it was aimed that the overall thickness of the semiconductor device be 0.7 mm and the mounting height after being mounted on the external device be 0.8 mm.

Here, a feature of the semiconductor device of this embodiment is that the semiconductor chip 1b is mounted on the bonding pad 2a by the adhesive tape 14, and the bonding pad 2a
And the inner lead 4a are provided integrally and below the semiconductor chip 1b toward the center line thereof. As a result, a region where the mounting connection electrode 5 is provided on the lower surface of the semiconductor device expands below the semiconductor chip 1b toward the center line of the semiconductor device. Therefore, as shown in FIG. 8B, the solder balls 8 welded to the mounting connection electrodes 5 are arranged in three rows, so that the external terminals are more effectively arranged on the lower surface of the semiconductor device. A land grid array type semiconductor device is realized.

In the present embodiment, only the mounting connection electrodes 5 are arranged in three rows along two opposing sides of the semiconductor device. However, the present invention is not limited to this. The mounting connection electrodes 5 may be arranged in three rows.

The mounting connection electrodes 5 may be arranged not only in three rows but also in four or more rows, and may be arranged over the entire lower surface of the semiconductor device.

In addition, the solder balls 8 may be arranged in a lattice on the lower surface of the semiconductor device. In this case, the bonding pads 2a and the inner leads 4a formed integrally below the semiconductor chip 1b are used as wiring patterns. This allows the mounting connection electrodes 5 to be arranged more freely, thereby realizing a semiconductor device having the solder balls 8 arranged in a lattice pattern including a staggered pattern on the lower surface of the semiconductor device.

In this embodiment, the electrodes of the semiconductor chip 1b and the bonding pads 2a are
However, the present invention is not limited to this. The main surface of the semiconductor chip 1b on which electrodes are provided and the upper surface of the protective film 6 are opposed to each other, and the electrodes of the semiconductor chip 1b and the bonding pads 2a are electrically connected. Can also be connected.
In this case, the electrode of the semiconductor chip 1b and the bonding pad 2a may be electrically connected by using a conductive substance, or may be pressed and contacted and electrically connected by the compressive stress of the sealing resin. Good. According to this, since there is no need to provide a bonding area outside the semiconductor chip 1b, a semiconductor device having a smaller area is realized.

In each of the embodiments described above, the solder balls 8 made of lead-free solder are welded to the mounting / connecting electrodes 5. However, the present invention is not limited to this, and balls made of ordinary Sn-Pb-based solder may be used. Alternatively, metal balls other than solder may be used.

Nothing may be provided on the mounting connection electrode 5. In this case, when the semiconductor device is mounted on an external device, a conductive material such as solder provided on a connection terminal of the external device, an anisotropic conductive sheet, or the like can be used.

When the mounting connection electrodes 5 are formed by plating, the thickness of the mounting connection electrodes 5 is increased.
May project from the protective film 6. In this case, the mounting connection electrode 5 and the connection terminal of the external device are securely connected even without solder balls.

Further, the thickness of the protective film 6 is
It is preferable that the thickness be smaller than the thickness of a. As a result, a semiconductor device having a lower mounting height after mounting is realized.

In the lead frame, the semiconductor chips are arranged in one row. However, the present invention is not limited to this, and the semiconductor chips can be arranged in a matrix, that is, two-dimensionally.

[0087]

According to the semiconductor device of the present invention, no through-hole is required between the inner lead and the external terminal, so that there is no need to provide a region for the through-hole. In addition, external terminals are formed on the lower surface of the semiconductor device including the lower part of the semiconductor chip without being restricted by the plane of the inner leads. Therefore, since the external terminals are efficiently arranged on the lower surface of the semiconductor device, a semiconductor device that can cope with reduction in area and increase in the number of pins is realized.

Further, since the inner leads connected to the electrodes of the semiconductor device are sealed with the sealing resin, a semiconductor device with improved connection reliability in the inner leads can be realized.

According to the lead frame of the present invention, the space between the inner leads and the space between the inner leads and the frame are connected by the insulating protective film, and the gap is formed between the inner leads and the frame. Is provided. Thus, the gap between the inner lead and the frame is reliably filled with the sealing resin, and the lead frame used for manufacturing the above-described semiconductor device is realized.

According to the method of manufacturing a semiconductor device according to the present invention, by using the above-described lead frame, the sealing resin is separated from the frame frame and only the insulating protective film is cut off, so that resin burrs and inner lead burrs are formed. It is possible to manufacture a semiconductor device in which the occurrence of the like is difficult.

According to the method of manufacturing a lead frame according to the present invention, a lead frame used for manufacturing the above-described semiconductor device can be easily manufactured.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention, and FIG. 1B is a bottom view of the semiconductor device of FIG.

2A is a cross-sectional view of a lead frame used in the semiconductor device shown in FIG. 1, and FIG. 2B is a bottom view of the lead frame of FIG.

3A is a plan view of the lead frame shown in FIG. 2, and FIG. 3B is a cross-sectional view of the lead frame taken along line III-III of FIG.

4 (a) to 4 (f) are cross-sectional views showing respective steps of a method for manufacturing the lead frame shown in FIG. 2;

5 (a) to 5 (f) are cross-sectional views showing respective steps of a method for manufacturing the semiconductor device shown in FIG.

FIG. 6A shows a state before the semiconductor device is separated from the lead frame according to the first embodiment, and FIG.
FIG. 2 is a cross-sectional view showing a completed product of the semiconductor device according to the first embodiment separated from the lead frame of FIG.

7A is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention, FIG. 7B is a cross-sectional view taken along a cutting line different from FIG. 7A, and FIG. 15A and 15B are bottom views of the semiconductor device.

FIG. 8A is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention, and FIG. 8B is a bottom view of the semiconductor device of FIG.

FIG. 9 is a cross-sectional view of a conventional semiconductor device.

[Explanation of symbols]

 1a, 1b Semiconductor chip 2a Bonding pad 2b Metal film for frame 3 Metal thin wire 4a Inner lead 4b Frame 5 Electrode for mounting connection (external terminal) 6 Protective film (insulating protective film) 7 Sealing resin 8 Solder ball (projection) 9 gap 10 punching punch 11 relief portion 12 stripper 13 punching die 14 adhesive tape 20a metal film (third metal film) 20b metal film (second metal film) 40 metal plate 50 metal film (first metal) Film) 60a resist film (first resist film) 60b resist film (second resist film)

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[Procedure amendment]

[Submission date] June 18, 1998

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claim 8

[Correction method] Change

[Correction contents]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] Claim 13

[Correction method] Change

[Correction contents]

Claims (16)

[Claims] 1. A semiconductor device comprising: a semiconductor chip having a plurality of electrodes on a main surface; and external terminals for transmitting and receiving signals between the electrodes and connection terminals of an external device. A chip, an inner lead electrically connected to each of the electrodes and transmitting / receiving a signal between the electrode and the external terminal, the external terminal provided in contact with a lower surface of the inner lead, An insulating protective film that exposes the bottom surface of the external terminal and supports the semiconductor chip and the inner lead, and a sealing resin for sealing the semiconductor chip and the inner lead on the insulating protective film. A semiconductor device, comprising: 2. The semiconductor device according to claim 1, wherein a thickness of said insulating protective film is smaller than a thickness of said inner lead. 3. The semiconductor device according to claim 1, wherein the thickness of the external terminal is equal to or greater than the thickness of the insulating protective film. 4. The semiconductor device according to claim 1, wherein the electrode and the inner lead are electrically connected via a bonding pad provided in contact with an upper surface of the inner lead. Semiconductor device. 5. The semiconductor device according to claim 4, wherein said bonding pad is made of a material having a resist function with respect to an etching solution for dissolving said inner leads. 6. The semiconductor device according to claim 1, wherein the semiconductor chip is mounted over a plurality of the inner leads via an insulating material. Semiconductor device. 7. The semiconductor device according to claim 1, wherein the external terminals are arranged in a lattice on a lower surface of the semiconductor device when viewed in plan. apparatus. 8. The semiconductor device according to claim 1, further comprising a protruding electrode connected to said external terminal. Not limited to. ) 9. An inner lead made of metal, a frame frame made of metal provided outside the inner lead with a predetermined gap from the inner lead, and an external terminal provided in contact with a lower surface of the inner lead. And an insulating protective film that supports the inner lead and the frame and exposes the lower surface of the external terminal. 10. The lead frame according to claim 9, wherein a resist function is provided for an etching solution that is provided in contact with an upper surface of the inner lead and is electrically connected to an electrode of a semiconductor chip and dissolves the inner lead. A lead frame further comprising a bonding pad made of a metal having the same. 11. A semiconductor device manufacturing method for manufacturing a semiconductor device by mounting a semiconductor chip having a plurality of electrodes on a lead frame having an insulating protective film for holding inner leads and a frame. A first step of mounting the semiconductor chip in a region inside the frame, a second step of electrically connecting the electrodes and the inner leads, and a region inside the frame, A third step of forming a resin package by sealing the semiconductor chip and the inner leads with a resin, and forming the insulating protective film exposing external terminals provided in contact with the lower surface of the inner leads. A fourth step of cutting along the outer periphery of the resin package body and separating the resin package body from the frame. Manufacturing method of the device. 12. The method of manufacturing a semiconductor device according to claim 11, wherein in the second step, the electrode and the inner lead are electrically connected via a bonding pad provided in contact with an upper surface of the inner lead. Wherein the bonding pad is made of a material having a resist function with respect to an etching solution for dissolving the inner leads. 13. The method of manufacturing a semiconductor device according to claim 11, further comprising, after the third step, a step of forming a protruding electrode on the external terminal. Semiconductor device manufacturing method. (Corresponds to the old claim 6. However, it is not limited to wire bonding.) 14. A first step of applying a resist film on both sides of a metal plate, and at least one of both sides of the metal plate,
A second step of forming a first opening in a resist film in a region where an external terminal is to be formed; a third step of forming a first metal film on the metal plate in the first opening; A fourth step of removing a resist film on the other surface of the metal plate; and an inner lead contacting an upper surface of the first metal film by removing a predetermined region of the metal plate from the other surface. And a fifth step of forming an insulating protective film made of the resist film on the one surface. 15. The method for manufacturing a lead frame according to claim 14, wherein, in the second step, on the other surface of the metal plate,
Second and third openings are further formed in the resist film in the region where the frame and the inner lead are formed. In the third step, second and third openings are formed in the second and third openings, respectively. A method of manufacturing a lead frame, further comprising: forming a metal film as described above; and, in the fifth step, etching the metal plate using the second and third metal films as an etching resist. 16. The method for manufacturing a lead frame according to claim 14, wherein in the first step, the first surface and the second surface are made of different materials. In the fourth step, the metal plate is etched from both sides using an etchant that dissolves only the second resist film, and the second resist film is removed. Characteristic method of manufacturing a lead frame.