JPH11340387A - Semiconductor device, its mounting method and electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent damage of a semiconductor chip which is to be caused by the fitting of a heat dissipating member. SOLUTION: In a semiconductor device having a semiconductor chip 3 mounted on a mounting surface of a wiring board 1 in a state that a circuit forming surface is made to face the mounting surface of the wiring board 1, retaining members 8 for retaining a heat dissipating member 22 fitted to the back facing the circuit forming surface of the semiconductor chip 3 are arranged. The tip parts of the retaining members 8 are protruded from the back of the semiconductor chip 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device, and more particularly to a technique effective when applied to a semiconductor device having a semiconductor chip having a large heat value.

[0002]

The semiconductor device incorporated into the information processing apparatus, such as the Related Art Personal computer as a CPU (C entral P rocessing U nit ) , since the amount of heat generated from the semiconductor chip is large, the heat radiation member, for example fin structure as a heat radiator Is attached (attached). In general, the radiator having the fin-type structure is mounted on a semiconductor device after the semiconductor device is mounted on a mounting board.

[0003] In the semiconductor device, for example, an electronic material [April 1996, April 1996,
14 to 19], a semiconductor chip is mounted on a mounting surface of a wiring board with a bump electrode interposed therebetween with a circuit forming surface facing a mounting surface of the wiring board; There has been proposed a semiconductor device having a package structure in which a resin is filled in a gap region between a mounting surface of a wiring board and a circuit forming surface of a semiconductor chip. In this semiconductor device, since the back surface facing the circuit forming surface of the semiconductor chip is exposed to the outside, a heat radiator can be directly mounted on the back surface of the semiconductor chip via a heat conductive material.

[0004]

However, when the heat radiator is mounted on the back surface of the semiconductor chip with a heat conductive material interposed therebetween, the following problems occur.

The radiator is generally mounted by an automatic mounting machine, but may be mounted in an inclined state with respect to the back surface of the semiconductor chip. Further, the back surface of the semiconductor chip may be inclined with respect to the mounting surface of the heat radiator due to warpage of the mounting board and the wiring board. In such a case, the heat radiator collides with the peripheral portion of the back surface of the semiconductor chip, and the semiconductor chip is chipped and damages such as cracks occur.

An object of the present invention is to provide a technique capable of preventing damage to a semiconductor chip.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0008]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

A semiconductor device having a semiconductor chip mounted on a mounting surface of the wiring board with the circuit forming surface facing the mounting surface of the wiring board, the semiconductor device facing the circuit forming surface of the semiconductor chip. The semiconductor device has a support for supporting a heat radiator mounted on the back surface, and the support has a tip end projecting from the back surface of the semiconductor chip. The support is
Outside the outer periphery of the semiconductor chip, the semiconductor chip is fixed to the wiring board. The support has a frame shape surrounding the outer periphery of the semiconductor chip.

The support is formed in a stripe shape, and the support having the stripe shape is provided outside each of two opposing sides of the semiconductor chip. The support is formed in a columnar or prismatic shape, and a plurality of the columnar or prismatic supports are scattered around the outer periphery of the semiconductor chip. According to the above-described means, when the heat radiator is mounted (attached) with a heat conductive material interposed on the back surface of the semiconductor chip, the heat radiator is supported by the support, so the heat radiator is provided on the peripheral portion of the back surface of the semiconductor chip. It is possible to prevent the mounting surface from crashing. Therefore, it is possible to prevent the semiconductor chip from being damaged by the attachment of the heat radiator.

[0011]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

(Embodiment 1) In this embodiment, an example in which the present invention is applied to a semiconductor device to which a radiator is mounted will be described.

FIG. 1 is a schematic plan view of a semiconductor device according to a first embodiment of the present invention, FIG. 2 is a schematic sectional view taken along line AA of FIG. 1, and FIG. It is a schematic cross section.

As shown in FIGS. 1 and 2, the semiconductor device of this embodiment has a circuit formation surface 3 X on a mounting surface 1 X of a wiring board 1.
The semiconductor chip 3 is mounted on the mounting surface 1X of the wiring board 1 with the Ys facing each other.

The planar shape of the wiring board 1 is, for example, a square shape. The wiring board 1 is made of, for example, alumina (Al ₂ O
It is composed of a ceramic substrate consisting of ₃ ). A plurality of electrodes 1A and a plurality of electrodes 1B are provided on the mounting surface 1X of the wiring board 1.
Are formed. In addition, a plurality of electrodes 1C are formed on the back surface 1Y of the wiring board 1 facing the mounting surface 1X. Each of the electrodes 1A, 1B and 1C is electrically connected via a wiring formed on the wiring board 1.

The planar shape of the semiconductor chip 3 is, for example, rectangular. The semiconductor chip 3 has a configuration mainly including a semiconductor substrate made of, for example, single crystal silicon and a wiring layer formed on the semiconductor substrate. The semiconductor chip 3 constitutes a circuit system incorporated as a CPU in an information processing device such as a personal computer. In the semiconductor chip 3 having such a circuit system, a large amount of heat is generated from the chip.

A plurality of electrodes 3A are formed on the circuit forming surface 3X of the semiconductor chip 3. Each of the plurality of electrodes 3 </ b> A is electrically connected to a circuit system configured on the semiconductor chip 3.

The electrode 1A of the wiring board 1 and the electrode 3A of the semiconductor chip 3 are electrically and mechanically connected by a bump electrode 2 interposed therebetween. That is, the semiconductor chip 3 of the present embodiment is mounted on the mounting surface 1X of the wiring board 1 with the bump electrode 2 interposed. The bump electrode 2 is, for example, 98 [wt%] Pb-2 [wt%] Sn having a liquidus temperature of about 320 to 325 [° C.].
It is formed of a solder material having a composition. Each of the electrode 1A and the electrode 3A has high wettability with the bump electrode 2,
For example, chromium (Cr) film, nickel (Ni) film, gold (Au)
It is composed of a multilayer film in which each of the films is sequentially laminated.

The mounting surface 1X of the wiring board 1 and the semiconductor chip 3
The resin 4 is filled in a gap region between the circuit formation surface 3X and the circuit formation surface 3X. As the resin 4, for example, an epoxy-based thermosetting resin to which a silica filler, a curing accelerator, a coupling agent, and the like are added is used. As described above, by filling the gap region between the mounting surface 1X of the wiring substrate 1 and the circuit forming surface 3X of the semiconductor chip 3 with the resin 4, the difference in the thermal expansion coefficient between the wiring substrate 1 and the semiconductor chip 3 can be reduced. The resulting damage to the bump electrode 2 can be prevented.

Outside the outer periphery of the semiconductor chip 3, a plurality of substrate mounting components 6, such as a resistance element and a capacitance element, are provided. The board-mounted component 6 is used for the electrode 1 of the wiring board 1.
B is electrically and mechanically connected via a solder material 5. As the solder material 5, for example, 90 [wt%] Pb-10 [wt] having a liquidus temperature of about 300 [° C] is used.
%] A solder material having a Sn composition is used.

A bump electrode 9 having a spherical shape, for example, is electrically and mechanically connected to the electrode 1C of the wiring board 1 as an external connection terminal. The bump electrode 9 is, for example, 1
37 [wt%] Pb having a eutectic temperature of about 83 [° C]
It is formed of a solder material having a composition of −63 [wt%] Sn.
In addition, each of the electrode 1B and the electrode 1C is formed of the same multilayer film as the electrode 1A described above.

The back surface 3Y of the semiconductor chip 3 facing the circuit forming surface 3X is exposed to the outside. As shown in FIG. 2, a heat radiator 22 is mounted on the back surface 3Y of the semiconductor chip 3 with a heat conductive material interposed therebetween. The mounting of the heat radiator 22 is performed in a mounting process of mounting the semiconductor device on a mounting board.

A support 8 for supporting a radiator 22 mounted on the back surface 3Y of the semiconductor chip 3 is provided outside the outer periphery of the semiconductor chip 3. The support 8 is bonded and fixed to the mounting surface 1X of the wiring board 1 with an adhesive 7 interposed therebetween.
In the present embodiment, as shown in FIG.
It has a frame shape extending along the periphery of the wiring board 1 so as to surround the semiconductor chip 3. As the adhesive 7, for example, an adhesive made of a thermosetting resin is used. The support 8 is made of, for example, the same material as the wiring board 1.

As shown in FIG. 3, the mounting surface 1 of the wiring board 1
The height H1 from X to the tip 8A of the support 8 is higher than the height H2 from the mounting surface 1X of the wiring board 1 to the back surface 3Y of the semiconductor chip 3. That is, the tip 8A of the support 8 protrudes from the back surface 3Y of the semiconductor chip 3. The distal end 8A of the support 8 has a flat structure so as to easily support the radiator 22.

Next, a method for manufacturing the semiconductor device will be described with reference to FIG. 4 (a schematic cross-sectional view for explaining the manufacturing method).

First, the solder transfer board is positioned on the surface of the electrode 1A formed on the mounting surface 1X of the wiring board 1, and then the solder is melted at a predetermined temperature to form the bump electrodes 2, and then the transfer board is formed. Remove only As solder,
For example, one having a composition of 98 [wt%] Pb-2 [wt%] Sn having a liquidus temperature of about 320 to 325 [° C.] is used. FIG. 4A shows the steps up to this point.

Next, with the circuit forming surface 3X of the semiconductor chip 3 facing the mounting surface 1X of the wiring substrate 1, the semiconductor chip 3 is arranged on the mounting surface 1X of the wiring substrate 1 with the bump electrode 2 interposed therebetween. I do.

Next, the bump electrode 2 is melted to electrically and mechanically connect the electrode 1A of the wiring board 1 and the electrode 3A of the semiconductor chip 3. The melting of the bump electrode 2 is performed, for example, in an atmosphere at a temperature of about 350 [° C.]. By this step, the semiconductor chip 3 is mounted on the mounting surface 1X of the wiring board 1 with the bump electrodes 2 interposed. FIG. 4B shows the steps up to this point.

Next, a solder paste material (5) is printed on the surface of the electrode 1B formed on the mounting surface 1X of the wiring board 1 by, for example, a screen printing method. The solder paste material (5) has a liquidus temperature of about 300 ° C., for example.
A solder paste material is used in which solder particles having a composition of 0 [wt%] Pb-10 [wt%] Sn and a flux are kneaded.

Next, the board-mounted component 6 is arranged on the electrode 1B of the wiring board 1 with the solder paste material (5) interposed therebetween, and then the solder paste material (5) is melted at a predetermined temperature to form a wiring board. The first electrode 1B and the board mounted component 6 are electrically and mechanically connected. The melting of the solder paste material (5) is performed in an atmosphere at a temperature at which the bump electrode 2 does not melt, for example, at a temperature of about 310 ° C.

Next, a resin 4 is filled between the mounting surface 1X of the wiring board 1 and the circuit forming surface 3X of the semiconductor chip 3. The filling of the resin 4 is performed by injecting a liquid thermosetting resin by utilizing a capillary phenomenon between the mounting surface 1X of the wiring board 1 and the circuit forming surface 3X of the semiconductor chip 3, and then performing a pre-bake process and a hard-baking process. Is performed. Figure 4 shows the steps up to this point.
It is shown in (c).

Next, an adhesive 7 is attached to the mounting surface 1X of the wiring board 1.
The support body 8 is bonded and fixed with the interposition of. As the adhesive 7, for example, an adhesive made of a thermosetting resin is used. The steps up to this point are shown in FIG.

Next, with the back surface 1Y of the wiring board 1 facing upward, for example, 183
37 [wt%] Pb-6 having a eutectic temperature of about [° C]
A solder ball having a composition of 3 [wt%] Sn is supplied.
The solder balls are melted at a predetermined temperature to form the bump electrodes 9. The supply of the solder balls is performed by, for example, a ball supply method using a glass mask or a ball supply method using a suction jig. The melting of the solder balls is performed in an atmosphere at a temperature at which the solder material 5 does not melt, for example, at a temperature of about 240 ° C. By this step, the semiconductor device shown in FIGS. 1 to 3 is almost completed.

Thereafter, the semiconductor device is shipped as a product. A semiconductor device shipped as a product is mounted on a mounting board as a component constituting an electronic device such as a CPU module.

Next, a method of mounting the semiconductor device will be described with reference to FIGS. 5 to 7 (schematic sectional views for explaining the mounting method).

First, the semiconductor device shown in FIGS. 1 to 3 is prepared.

Next, the semiconductor device is placed on the mounting surface of the mounting substrate 20, and thereafter, the bump electrodes 9 are melted at a predetermined temperature to form the electrodes 20A of the mounting substrate 20 and the electrodes 1C of the wiring substrate 1.
Are electrically and mechanically connected to each other. The melting of the bump electrode 9 is performed, for example, in an atmosphere at a temperature of about 240 [° C.].
By this step, the semiconductor device is mounted on the mounting surface of the mounting substrate 20 with the bump electrodes 9 interposed. The steps so far are shown in FIG.

Next, a heat conductive material 21 is applied on the back surface of the semiconductor chip 3 by, for example, a dispenser method. As the heat conductive material 21, for example, a viscous material such as a heat conductive grease material or a heat conductive compound material is used. The steps so far are shown in FIG.

Next, as shown in FIG.
A radiator 22 having, for example, a finned structure is mounted on the back surface 3Y of the substrate with a heat conductive material 21 interposed therebetween. The mounting of the radiator 22 is performed by an automatic mounting machine. The radiator 22 has a plane size larger than the plane size of the wiring board 1, for example, 45 mm.
One having a plane size of [mm] × 45 [mm] is used. In this step, a support 8 fixed to the mounting surface 1X of the wiring board 1 is provided outside the outer periphery of the semiconductor chip 3, and the tip 8A of the support 8 protrudes beyond the back surface 3Y of the semiconductor chip 3. Since the radiator 22 is supported by the support 8, it is possible to prevent the mounting surface 22 </ b> A of the radiator 22 from colliding with the peripheral edge of the back surface 3 </ b> Y of the semiconductor chip 3. The radiator 22 has a mounting surface 22A.
The electric fan 23 is attached to the opposite side.

According to this step, the semiconductor device mounted on the mounting surface of the mounting board 20 and the radiator 22 supported by the support 8 and mounted on the back surface 3Y of the semiconductor chip 3 with the heat conductive material 21 interposed therebetween. An electronic device having:

As described above, according to the present embodiment, the following effects can be obtained.

(1) A semiconductor device having a semiconductor chip 3 mounted on the mounting surface 1X of the wiring substrate 1 with the circuit forming surface 3X facing the mounting surface 1X of the wiring substrate 1, And a support 8 for supporting a heat radiator 22 mounted on the back surface 3Y of the semiconductor chip 3 opposite to the circuit forming surface 3X.
More protruding. With this configuration, the semiconductor chip 3
When the heat radiator 22 is mounted (attached) to the rear surface 3Y of the semiconductor chip 3 with the heat conductive material 21 interposed therebetween, the heat radiator 22 is supported by the support body 8, so that the heat radiator 2
The collision of the second mounting surface 22A can be avoided. As a result, the semiconductor chip 3 due to the mounting of the heat radiator 22
Damage can be prevented.

Further, since the semiconductor chip 3 can be prevented from being damaged by the attachment of the heat radiator 22, the yield in the semiconductor device mounting process, in other words, the electronic device manufacturing process can be improved.

(2) The support 8 is fixed to the mounting surface 1X of the wiring board 1 outside the outer periphery of the semiconductor chip 3. With this configuration, without the support 8 interposed,
Since the heat radiator 22 can be mounted on the back surface 3Y of the semiconductor chip 3 with the heat conductive material 21 interposed therebetween, the semiconductor chip 3
The distance between the back surface 3Y and the mounting surface 22A of the radiator 22 can be reduced. As a result, it is possible to prevent the semiconductor chip 3 from being damaged due to the attachment of the heat radiator 22 without reducing the transmission efficiency from the semiconductor chip 3 to the heat radiator 22.

In this embodiment, an example in which the support 8 is formed in a frame shape has been described, but FIG. 8 (schematic plan view)
As shown in the figure, the support 8 is formed in a stripe shape,
The stripe-shaped support 8 may be provided outside each of two opposing sides of the semiconductor chip 3. In this case, the planar size of the semiconductor device can be reduced as compared with the semiconductor device of the above embodiment.

Further, as shown in FIG. 9 (schematic plan view), the support 8 is formed in a cylindrical shape, and a plurality of the cylindrical supports 8 are provided outside the outer periphery of the semiconductor chip 3. You may. Also in this case, the planar size of the semiconductor device can be reduced as compared with the semiconductor device of the above-described embodiment.

Although not shown, the support 8 may have a prismatic shape, and a plurality of the prismatic supports 8 may be provided outside the outer periphery of the semiconductor chip 3. Also in this case, compared to the semiconductor device of the above-described embodiment,
The planar size of the semiconductor device can be reduced.

Further, in the present embodiment, an example in which the support 8 is formed of the same material as the wiring board 1 has been described, but the support 8 is not limited thereto.
For example, a material made of an aluminum alloy material or a resin may be used.

(Embodiment 2) In this embodiment, a multi-
An example in which the present invention is applied to a chip-type semiconductor device will be described.

FIG. 10 is a schematic plan view of the semiconductor device of the present embodiment, and FIG. 11 is a schematic cross-sectional view taken along the line BB of FIG.

As shown in FIGS. 10 and 11, the semiconductor device according to the second embodiment has the mounting surface 1X of the wiring board 1 with the circuit forming surface 3Y facing the mounting surface 1X of the wiring board 1.
The configuration is such that four semiconductor chips 3 are mounted thereon. In the mounting process of mounting the semiconductor device, a heat radiator is mounted on the back surface 3Y of each semiconductor chip 3 in the mounting process of mounting the semiconductor device, similarly to the semiconductor device of the first embodiment.

Outside the outer periphery of each semiconductor chip 3, a support 8 for supporting a heat radiator mounted on the back surface 3Y of each semiconductor chip 3 is provided. The support 8 is bonded and fixed to the mounting surface 1X of the wiring board 1 with an adhesive 7 interposed therebetween.
In the present embodiment, the supports 8 are formed in a columnar shape, and are scattered outside the outer periphery of each semiconductor chip 3. Each of the supports 8 extends from the mounting surface 1X of the wiring board 1 to the tip 8
The height to A is the same, and the tip 8A of each support 8 is higher than the height from the mounting surface 1X of the wiring board 1 to the back surface 3Y of the semiconductor chip 3.

In the semiconductor device thus configured, similarly to the first embodiment, the semiconductor chip 3 can be prevented from being damaged by the attachment of the heat radiator. Further, the yield in the semiconductor device mounting process (electronic device manufacturing process) can be increased. Further, it is possible to prevent the semiconductor chip 3 from being damaged due to the attachment of the heat radiator without lowering the transmission efficiency from the semiconductor chip 3 to the heat radiator.

Embodiment 3 In this embodiment, an example in which the present invention is applied to a semiconductor device having a heat radiator will be described. FIG. 12 is a schematic sectional view of a semiconductor device according to Embodiment 3 of the present invention.

As shown in FIG. 12, in the semiconductor device of this embodiment, the bump electrode 2 is interposed on the mounting surface 1X of the wiring board 1 with the circuit forming surface 3Y facing the mounting surface 1X of the wiring board 1. The semiconductor chip 3 is mounted, and a heat dissipation member 22 is mounted on the back surface 3Y of the semiconductor chip 3 with a heat conductive material 21 therebetween.

A support 8 for supporting the heat radiator 22 is provided outside the outer periphery of the semiconductor chip 3. The support member 8 is bonded and fixed to the mounting surface 1X of the wiring board 1 with an adhesive 7 interposed therebetween.
It protrudes more than Y. The support 8 of the present embodiment has a frame shape formed so as to surround the outer periphery of the semiconductor chip 3.

The semiconductor device of this embodiment is formed by the same manufacturing process as that of the first embodiment. However, in the semiconductor device of this embodiment, the bump electrode 9 is formed in the manufacturing process.
Is formed on the back surface 3Y of the semiconductor chip 3,
The heat radiator 22 is mounted with the intermediary 1 interposed therebetween.

The same effect as in the first embodiment can be obtained in the semiconductor device having the above-described configuration.

Since the semiconductor chip 3 can be prevented from being damaged by the mounting of the heat radiator 22, the yield in the semiconductor device manufacturing process can be improved.

The support 8 may have a stripe shape, a column shape, or a prism shape.

(Embodiment 4) In this embodiment, an example in which the present invention is applied to a semiconductor device having a radiator provided with a support will be described. FIG. 13 is a schematic sectional view of a semiconductor device according to a fourth embodiment of the present invention.

As shown in FIG. 13, in the semiconductor device of the present embodiment, the bump electrode 2 is interposed on the mounting surface 1X of the wiring board 1 with the circuit forming surface 3Y facing the mounting surface 1X of the wiring board 1. The semiconductor chip 3 is mounted, and a heat dissipation member 22 is mounted on the back surface 3Y of the semiconductor chip 3 with a heat conductive material 21 therebetween.

A support 8 for supporting the radiator 22 is provided outside the outer periphery of the semiconductor chip 3. The support 8 is integrated with the radiator 22, and the height H3 from the mounting surface 22 </ b> A of the radiator 22 to the tip 8 </ b> A of the support 8 is equal to the height of the wiring board 1.
Is higher than the height H2 from the mounting surface 1X to the back surface 3Y of the semiconductor chip 3. The support 8 of the present embodiment includes:
The wiring board 1 is arranged so as to surround the outer periphery of the semiconductor chip 3.
Is formed along the periphery of the frame.

The semiconductor device of this embodiment is formed by the same manufacturing process as that of the first embodiment. However, in the semiconductor device of this embodiment, the bump electrodes 9 are formed in the manufacturing process.
Is formed on the back surface 3Y of the semiconductor chip 3,
The heat radiator 22 is mounted with the intermediary 1 interposed therebetween.

The same effect as that of the first embodiment can be obtained in the semiconductor device having such a configuration.

Further, since the damage of the semiconductor chip 3 due to the mounting of the heat radiator 22 can be prevented, the yield in the semiconductor device manufacturing process can be increased.

In this embodiment, the example in which the support 8 is integrated with the radiator 22 has been described. However, the support 8 may be fixed to the mounting surface 22A of the radiator 22 with an adhesive. Good.

As described above, the invention made by the present inventor is:
Although specifically described based on the embodiment, the present invention
It is needless to say that the present invention is not limited to the above-described embodiment, but can be variously modified without departing from the scope of the invention.

[0069]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

The semiconductor chip can be prevented from being damaged by the mounting of the heat radiator.

Further, it is possible to prevent the semiconductor chip from being damaged due to the attachment of the heat radiator without lowering the transmission efficiency from the semiconductor chip to the heat radiator.

Further, the yield in the semiconductor device mounting process (electronic device manufacturing process) can be increased.

Further, the yield in the semiconductor device manufacturing process can be increased.

[Brief description of the drawings]

FIG. 1 is a schematic plan view of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a schematic sectional view taken along line AA of FIG.

FIG. 3 is an enlarged schematic cross-sectional view of a main part of FIG. 2;

FIG. 4 is a schematic cross-sectional view for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention;

FIG. 5 is a schematic cross-sectional view for explaining a method of mounting the semiconductor device according to the first embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view for explaining a method of mounting the semiconductor device according to the first embodiment of the present invention;

FIG. 7 is a schematic cross-sectional view for explaining a method of mounting the semiconductor device according to the first embodiment of the present invention.

FIG. 8 is a schematic plan view of a semiconductor device according to a first modification of the first embodiment of the present invention.

FIG. 9 is a schematic plan view of a semiconductor device which is a second modification of the first embodiment of the present invention.

FIG. 10 is a schematic plan view of a semiconductor device according to a second embodiment of the present invention.

FIG. 11 is a schematic sectional view taken along the line BB of FIG. 10;

FIG. 12 is a schematic sectional view of a semiconductor device according to a third embodiment of the present invention.

FIG. 13 is a schematic sectional view of a semiconductor device according to a fourth embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Wiring board, 1X ... Mounting surface, 1Y ... Back surface, 1A, 1
B, 1C ... electrode, 2 ... bump electrode, 3 ... semiconductor chip,
3X: circuit forming surface, 3Y: back surface, 4: resin, 5: solder material, 6: board mounted component, 7: adhesive material, 8: support, 9 ...
Bump electrode, 20: mounting board, 20A: electrode, 21: heat conductive material, 22: heat radiator, 23: electric fan.

 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Toshihiko Sato 3-16-16 Shinmachi, Ome-shi, Tokyo Inside the Device Development Center, Hitachi, Ltd.

Claims (12)

[Claims] 1. A semiconductor device having a semiconductor chip mounted on a mounting surface of a wiring substrate with a circuit forming surface facing a mounting surface of the wiring substrate, wherein the semiconductor device faces a circuit forming surface of the semiconductor chip. A semiconductor device, comprising: a support for supporting a heat dissipating body mounted on a back surface of the semiconductor chip, wherein the support has a tip end projecting from a back surface of the semiconductor chip. 2. A semiconductor chip mounted on a mounting surface of the wiring board in a state where a circuit forming surface faces a mounting surface of the wiring board, and a semiconductor chip mounted on a back surface facing the circuit forming surface of the semiconductor chip. A semiconductor device having a heat radiator mounted thereon with a heat conductive material interposed therebetween, wherein the semiconductor device has a support for supporting the heat radiator, and the support has a tip protruding from a back surface of the semiconductor chip. A semiconductor device characterized by the above-mentioned. 3. The semiconductor device according to claim 1, wherein the support is fixed to the wiring board outside an outer periphery of the semiconductor chip. 4. A semiconductor chip mounted on a mounting surface of the wiring board with a circuit forming surface facing a mounting surface of the wiring board, and a semiconductor chip mounted on a back surface facing the circuit forming surface of the semiconductor chip. A semiconductor device having a radiator mounted thereon with a heat conductive material interposed therebetween, comprising a support for supporting the radiator, wherein the support is fixed or integrated with the radiator and the radiator is mounted. A semiconductor device, wherein a height from a surface to a tip portion of the support is higher than a height from a mounting surface of the wiring board to a back surface of the semiconductor chip. 5. The semiconductor device according to claim 4, wherein the support is provided outside an outer periphery of the semiconductor chip. 6. The semiconductor device according to claim 1, wherein the support has a frame shape surrounding an outer periphery of the semiconductor chip. 7. The semiconductor device according to claim 1, wherein the support is formed in a stripe shape, and the support having the stripe shape is provided outside each of two opposing sides of the semiconductor chip. The semiconductor device according to claim 1. 8. The support member is formed in a columnar shape or a prismatic shape, and a plurality of the cylindrical or prismatic supports are scattered around the outer periphery of the semiconductor chip. The semiconductor device according to claim 1, wherein: 9. The semiconductor device according to claim 1, wherein the semiconductor chip is mounted on a mounting surface of the wiring board via a bump electrode. . 10. A semiconductor chip mounted on a mounting surface of the wiring board with the circuit forming surface facing the mounting surface of the wiring board, and a tip end of a back surface facing the circuit forming surface of the semiconductor chip. Preparing a semiconductor device having a portion protruding and a support fixed to the wiring substrate outside the outer periphery of the semiconductor chip; and mounting the semiconductor device on a mounting substrate, and then conducting heat conduction to the back surface of the semiconductor chip. A method for mounting a semiconductor device, comprising: mounting a heat radiator with a material interposed therebetween. 11. A semiconductor device having a semiconductor chip mounted on a mounting surface of the wiring board with the circuit forming surface facing the mounting surface of the wiring board, and a back surface facing the circuit forming surface of the semiconductor chip. A semiconductor device is mounted on the mounting surface of the mounting board, and the heat radiator is supported by a support fixed to the mounting surface of the wiring board. An electronic device, wherein the support has a tip protruding from the back surface of the semiconductor chip. 12. A semiconductor device having a semiconductor chip mounted on a mounting surface of the wiring board in a state where the circuit forming surface faces the mounting surface of the wiring substrate, and a semiconductor device having a back surface facing the circuit forming surface of the semiconductor chip. A radiator mounted with a heat conductive material interposed therebetween, wherein the semiconductor device is mounted on a mounting surface of a mounting substrate, and the radiator has a support on a mounting surface facing the back surface of the semiconductor chip. An electronic device, wherein a height from a mounting surface of the heat radiator to a tip portion of the support is higher than a height from a mounting surface of the wiring board to a back surface of the semiconductor chip.