JPH11315371A - Plasma source of vacuum film forming device - Google Patents

Plasma source of vacuum film forming device

Info

Publication number
JPH11315371A
JPH11315371A JP10124516A JP12451698A JPH11315371A JP H11315371 A JPH11315371 A JP H11315371A JP 10124516 A JP10124516 A JP 10124516A JP 12451698 A JP12451698 A JP 12451698A JP H11315371 A JPH11315371 A JP H11315371A
Authority
JP
Japan
Prior art keywords
intermediate electrode
plasma source
insulating
insulating tube
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10124516A
Other languages
Japanese (ja)
Inventor
Masaru Tanaka
勝 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP10124516A priority Critical patent/JPH11315371A/en
Publication of JPH11315371A publication Critical patent/JPH11315371A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a plasma source of a vacuum film forming device good in operability in assembling operation and small in bodily fatigue. SOLUTION: This plasma source is composed of a primary intermediate electrode 11 superposed on the back side of a secondary intermediate electrode 12 and an insulating tube 15 fitted to the back side of the primary intermediate electrode 11, insulating rings 21 are fitted to the fronts of the primary and secondary intermediate electrodes 11 and 12 by using set members 80, each set member 80 has a rim 82 in the outer circumference, the inner circumference of the rim 82 has an inside diameter so as to be joined and inserted to the outer circumference of each intermediate electrode 11 and 12, each insulating ring 21 has difference in level 23 in the outer circumference, and the difference in level 23 has an outside diameter so as to be inserted to the inside of the set member 80.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、真空成膜装置のプ
ラズマ源に関する。さらに詳しくは、組立作業が容易に
行えるように改良されたプラズマ源に関する。
The present invention relates to a plasma source for a vacuum film forming apparatus. More particularly, the present invention relates to a plasma source improved so that an assembling operation can be easily performed.

【0002】[0002]

【従来の技術】一般にプラズマを利用した真空成膜装置
として、イオンプレーティング装置やプラズマCVD装
置が知られている。そして、イオンプレーティング装置
として、例えばアーク放電型プラズマ源である圧力勾配
型プラズマ源あるいはHCDプラズマ源を用いた装置が
知られている。このようなイオンプレーティング装置で
は、プラズマ源(プラズマビーム発生器)を備えてお
り、真空容器中に配置されたハース(陽極)とプラズマ
源との間でプラズマビームを生成して、ハース上に載置
された蒸着材料を加熱蒸発させている。そして、蒸着材
料からの蒸発金属粒子はプラズマビームによってイオン
化され、このイオン粒子が負電圧の基板表面に付着し
て、基板上に膜が形成される。
2. Description of the Related Art Generally, an ion plating apparatus and a plasma CVD apparatus are known as vacuum film forming apparatuses utilizing plasma. As an ion plating apparatus, for example, an apparatus using a pressure gradient type plasma source which is an arc discharge type plasma source or an HCD plasma source is known. Such an ion plating apparatus is provided with a plasma source (plasma beam generator), and generates a plasma beam between a hearth (anode) arranged in a vacuum vessel and the plasma source, and places the plasma beam on the hearth. The placed evaporation material is heated and evaporated. Then, the evaporated metal particles from the deposition material are ionized by the plasma beam, and the ion particles adhere to the surface of the substrate at a negative voltage to form a film on the substrate.

【0003】図8を参照して、この種のイオンプレーテ
ィング装置について概略説明を行う。このイオンプレー
ティング装置は、気密性の真空容器1を備えており、こ
の真空容器1にはガイド部2を介してプラズマ源(例え
ば、圧力勾配型プラズマ銃)10が取付けられている。
ガイド部2の外側にはプラズマビームガイド用のステア
リングコイル3が配設されている。
With reference to FIG. 8, this type of ion plating apparatus will be described briefly. The ion plating apparatus includes an airtight vacuum vessel 1, and a plasma source (for example, a pressure gradient plasma gun) 10 is attached to the vacuum vessel 1 via a guide 2.
A steering coil 3 for plasma beam guide is arranged outside the guide portion 2.

【0004】真空容器1内には被処理物体としての基板
Bが搬送装置4に支持されて配置されており、基板Bに
は負バイアス用の直流電源が接続される。基板Bに対向
して真空容器1の底面にはハース(陽極部)5が配置さ
れる。また、真空容器1の側壁にはArガス等のキャリ
アガスを導入するためのガス導入口8が形成されると共
に、真空容器1内を排気するための排気口9が形成され
ている。
A substrate B as an object to be processed is disposed in a vacuum vessel 1 and supported by a transfer device 4, and a DC power supply for negative bias is connected to the substrate B. A hearth (anode part) 5 is arranged on the bottom surface of the vacuum vessel 1 so as to face the substrate B. Further, a gas inlet 8 for introducing a carrier gas such as Ar gas is formed on a side wall of the vacuum vessel 1 and an exhaust port 9 for exhausting the inside of the vacuum vessel 1 is formed.

【0005】プラズマ源10には、プラズマビーム収束
用の第1中間電極11と第2中間電極12が同心状に重
ねて配置されている。前記第1中間電極11には磁極軸
がプラズマ源10の中心軸と平行になるようにして永久
磁石13が内蔵され、第2中間電極にはコイル14が内
蔵されている。
In the plasma source 10, a first intermediate electrode 11 for converging a plasma beam and a second intermediate electrode 12 are arranged concentrically and overlapped. The first intermediate electrode 11 has a permanent magnet 13 built therein so that the magnetic pole axis is parallel to the center axis of the plasma source 10, and the second intermediate electrode has a coil 14 built therein.

【0006】前記プラズマ源10には、第1,第2中間
電極11・12で規定される通路に通ずる絶縁管(例え
ば、ガラス管)15が取付けられており、この絶縁管1
5内にはMo筒16が配置されている。そして、このM
o筒16内にはTaパイプ17が配置されている。Mo
筒16とTaパイプ17で規定される空間はLaB6製
の環状板18で隔離されている。上述の絶縁管15、M
o筒16、およびTaパイプ17の一端は導体板部19
に取付けられている。この導体板部19に形成されたキ
ャリアガス導入口19a からキャリアガスgが導入され、
このキャリアガスgはTaパイプ17を通過する。
The plasma source 10 is provided with an insulating tube (for example, a glass tube) 15 which communicates with a passage defined by the first and second intermediate electrodes 11 and 12.
The Mo cylinder 16 is arranged in the inside 5. And this M
A Ta pipe 17 is arranged in the o-cylinder 16. Mo
The space defined by the cylinder 16 and the Ta pipe 17 is isolated by an annular plate 18 made of LaB6. The above-mentioned insulating tube 15, M
o One end of the cylinder 16 and the Ta pipe 17 is a conductor plate 19
Mounted on A carrier gas g is introduced from a carrier gas inlet 19a formed in the conductor plate portion 19,
This carrier gas g passes through the Ta pipe 17.

【0007】前記導体板部19には可変電源Eのマイナ
ス端が接続され、そのプラス端はそれぞれ抵抗器R1お
よびR2を介して第1・第2の中間電極11・12に接
続されている。一方、ハース5は可変電源E、および抵
抗器R1およびR2に接続される。
The negative end of the variable power source E is connected to the conductor plate 19, and the positive end is connected to the first and second intermediate electrodes 11 and 12 via resistors R1 and R2, respectively. On the other hand, hearth 5 is connected to variable power supply E and resistors R1 and R2.

【0008】上記のイオンプレーティング装置では、キ
ャリアガス導入口19a からキャリアガスgが導入される
と、第1中間電極11とMo筒16との間で放電が始ま
る。これによって、プラズマビームPが生成される。こ
のプラズマビームPはステアリングコイル3にガイドさ
れて、陽極として用いられるハース5に到達する。ハー
ス5にプラズマビームPが与えられると、ハース5に収
納された蒸着材料Mがジュール加熱されて蒸発する。こ
の蒸発金属粒子はプラズマビームPによってイオン化さ
れて、負電圧が印加された基板Bの表面に付着し、基板
B上に膜が形成される。
In the above-described ion plating apparatus, when the carrier gas g is introduced from the carrier gas inlet 19a, a discharge starts between the first intermediate electrode 11 and the Mo cylinder 16. Thereby, the plasma beam P is generated. The plasma beam P is guided by the steering coil 3 and reaches the hearth 5 used as an anode. When the plasma beam P is given to the hearth 5, the vapor deposition material M stored in the hearth 5 is heated by Joule heating and evaporates. The evaporated metal particles are ionized by the plasma beam P and adhere to the surface of the substrate B to which the negative voltage is applied, and a film is formed on the substrate B.

【0009】なお、プラズマCVD装置では、真空容器
内が排気されると共に、原料ガス導入口より原料ガスが
導入され、プラズマ源よりプラズマビームを発生して陽
極に導き、プラズマにより基板に膜が形成されるが、真
空容器やプラズマ源の構成は実質同一である。
In a plasma CVD apparatus, the inside of a vacuum vessel is evacuated, a source gas is introduced from a source gas inlet, a plasma beam is generated from a plasma source and guided to an anode, and a film is formed on a substrate by plasma. However, the configurations of the vacuum vessel and the plasma source are substantially the same.

【0010】[0010]

【発明が解決しようとする課題】ところで、前記真空成
膜装置のプラズマ源10は、図9に示すようにして組立
てられている。まず、第2中間電極12の背面(図中右
側)に、表裏両面の溝にOリング22を嵌めた、セラミ
ック製やテフロン製などの絶縁リング21を置き、さら
に第1中間電極11を重ねて、ボルト孔の位相を合わせ
る。ついで、ボルト孔に絶縁スリーブ101 と長ボルト10
2 を挿入して、第1中間電極11と第2中間電極12を
貫通させる。この仮りに組み合わせた状態を作業員が手
で保持しながら、第2中間電極12の前面(図中左側)
に別の表裏両面にOリング22を嵌めた絶縁リング21
を置き、真空容器側のガイド部2のフランジ2aに前記
長ボルト102 をねじ込む。このようにして、第1・第2
中間電極11、12を組付けた後、第1中間電極11の
背面に絶縁管15を組付けるのである。この絶縁管15
の第1中間電極11への取付けは、取付けフランジ103
を介してボルト104 をねじ込んで行い、絶縁管15の入
口側への導体抜部19の取付けは、取付けフランジ105
を介してボルト106 をねじ込んで行っている。
Incidentally, the plasma source 10 of the vacuum film forming apparatus is assembled as shown in FIG. First, an insulating ring 21 made of ceramic or Teflon, in which O-rings 22 are fitted in grooves on both sides, is placed on the back surface (the right side in the figure) of the second intermediate electrode 12, and the first intermediate electrode 11 is further stacked. , Adjust the phases of the bolt holes. Next, insert the insulation sleeve 101 and long bolt 10 into the bolt holes.
2 is inserted to penetrate the first intermediate electrode 11 and the second intermediate electrode 12. While the worker temporarily holds the temporarily combined state, the front surface of the second intermediate electrode 12 (left side in the figure)
Ring 21 with O-rings 22 fitted on both sides
And screw the long bolt 102 into the flange 2a of the guide portion 2 on the vacuum vessel side. In this way, the first and second
After assembling the intermediate electrodes 11 and 12, the insulating tube 15 is attached to the back surface of the first intermediate electrode 11. This insulating tube 15
Is mounted on the first intermediate electrode 11 by using the mounting flange 103.
The conductor 104 is screwed into the insulation tube 15 through the mounting flange 105.
The bolt 106 is screwed in through this.

【0011】しかるに、上記の組立作業は、第1中間電
極11と第2中間電極12の仮組立体から長ボルト102
が絶縁スリーブ101 ごと抜け落ちたり、絶縁リング21
が外れてOリング22が落下したりするので、非常に作
業性が悪い。また、第1・第2中間電極11・12を組
立て作業中ずっと片手で保持しなければならないので、
肉体的に苦しい作業となる。さらに、図示していない
が、絶縁管15の−端と第1中間電極11との間、およ
び絶縁管15の他端と導体板部19との間にも、Oリン
グが介在されており、絶縁管15の取付け時や導体板部
19の取付け時に図示しないOリングが落下しやすいと
いう問題がある。
However, the above-mentioned assembling operation is performed by removing the long bolts 102 from the temporary assembly of the first intermediate electrode 11 and the second intermediate electrode 12.
Of the insulation sleeve 101
, And the O-ring 22 falls, so that the workability is very poor. Also, since the first and second intermediate electrodes 11 and 12 must be held with one hand during the assembly work,
This is a physically demanding task. Further, although not shown, an O-ring is interposed between the negative end of the insulating tube 15 and the first intermediate electrode 11 and between the other end of the insulating tube 15 and the conductor plate portion 19, There is a problem that an O-ring (not shown) is likely to drop when the insulating tube 15 or the conductor plate 19 is mounted.

【0012】本発明は、かかる事情に鑑み、組立作業の
作業性が良く肉体的疲労も少なくてすむ真空成膜装置の
プラズマ源を提供することを目的とする。
The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a plasma source of a vacuum film forming apparatus which can be easily assembled and requires little physical fatigue.

【0013】[0013]

【課題を解決するための手段】請求項1の真空成膜装置
のプラズマ源は、第2中間電極と、第2中間電極の背面
側に重ねて取付けられた第1中間電極と、該第1中間電
極の背面側に取付けられた絶縁管と該絶縁管の入口側に
取付けられた導体板部とからなる真空成膜装置のプラズ
マ源であって、前記第2中間電極の前面と真空容器側の
取付部材との間に、表裏両面にOリングをセットした絶
縁リングを介在させ、かつ前記第2中間電極の背面と前
記第1中間電極の前面との間に、表裏両面にOリングを
セットした絶縁リングを介在させ、前記各絶縁リングが
いずれもセット部材を用いて前記第1・第2中間電極の
前面に取付けられていることを特徴とする。請求項2の
真空成膜装置のプラズマ源は、前記各セット部材は、い
ずれもリング状に形成され、各中間電極に支持手段を介
して取付られ、前記各絶縁リングは、いずれも、外周に
段差を有し、該段差は、前記各セット部材の内径に嵌る
外径を有していることを特徴とする。請求項3の真空成
膜装置のプラズマ源は、第2中間電極と、第2中間電極
の背面側に重ねて取付けられた第1中間電極と、該第1
中間電極の背面側に取付あれた絶縁管と該絶縁管の入口
側に取付られた導体板部とからなる真空成膜装置のプラ
ズマ源であって、前記第1中間電極の背面側に前記絶縁
管の出口側端部を収容して位置決めするリムが形成さ
れ、かつ前記導体板部の前面側に、前記絶縁管の入口側
端部収容して位置決めするリムが形成されていることを
特徴とする。
According to a first aspect of the present invention, a plasma source for a vacuum film forming apparatus comprises: a second intermediate electrode; a first intermediate electrode mounted on a back side of the second intermediate electrode; What is claimed is: 1. A plasma source for a vacuum film forming apparatus comprising: an insulating tube attached to the back side of an intermediate electrode; and a conductor plate attached to an inlet side of the insulating tube, wherein An insulating ring having O-rings set on both front and back surfaces is interposed between the mounting members, and O-rings are set on both front and back surfaces between the back surface of the second intermediate electrode and the front surface of the first intermediate electrode. Each of the insulating rings is attached to the front surface of the first and second intermediate electrodes using a set member. The plasma source of the vacuum film forming apparatus according to claim 2, wherein each of the set members is formed in a ring shape, is attached to each of the intermediate electrodes via a support means, and each of the insulating rings is formed on an outer periphery. There is a step, and the step has an outer diameter that fits the inner diameter of each of the set members. The plasma source of the vacuum film forming apparatus according to claim 3, wherein the plasma source includes a second intermediate electrode, a first intermediate electrode mounted on the back side of the second intermediate electrode, and the first intermediate electrode.
What is claimed is: 1. A plasma source for a vacuum film forming apparatus comprising: an insulating tube attached to a back side of an intermediate electrode; and a conductor plate portion attached to an inlet side of the insulating tube. A rim for housing and positioning the outlet end of the tube is formed, and a rim for housing and positioning the inlet end of the insulating tube is formed on the front side of the conductor plate portion. I do.

【0014】請求項1の発明によれば、Oリングをセッ
トした各絶縁リングが、それぞれセット部材によって、
第1・第2中間電極に取付けられて落下するおそれがな
いので、取付作業が容易に行えるようになる。また、セ
ット部材を用いたことにより、第2中間電極と真空容器
側取付部材の間、および第1中間電極と第2中間電極の
間の距離を固定できるため、締結ボルトの締込みすぎに
よる絶縁リングの破損を防止できる。さらに、第2中間
電極と真空容器との間および第1中間電極と第2中間電
極の間の空間が無くなるので電圧上昇によるスパークを
防止することができる。請求項2の発明によれば、各リ
ング状のセット部材の内周に絶縁リングを嵌め、その状
態で中間電極に取付られるので、絶縁リングの中間電極
への取付けを容易に行える。請求項3の発明によれば、
第1中間電極の背面のリムに絶縁管の一端を入れると位
置決めと共に保持されるので、Oリングの落下防止に手
をとられることなく取付作業ができ、同様に絶縁管の他
端に導体板部の前面のリムを入れて位置決めして保持す
ると、Oリングの落下防止に手をとられることなく取付
作業ができる。よって、組立作業の作業性が良く肉体的
疲労も少なくてすむ。
According to the first aspect of the present invention, the respective insulating rings on which the O-rings are set are respectively set by the setting members.
Since there is no possibility of dropping by being attached to the first and second intermediate electrodes, the attaching operation can be easily performed. Further, by using the set member, the distance between the second intermediate electrode and the vacuum vessel side mounting member and the distance between the first intermediate electrode and the second intermediate electrode can be fixed. The damage of the ring can be prevented. Furthermore, since there is no space between the second intermediate electrode and the vacuum vessel and between the first intermediate electrode and the second intermediate electrode, it is possible to prevent sparks due to a voltage rise. According to the second aspect of the present invention, since the insulating ring is fitted to the inner periphery of each ring-shaped set member and is attached to the intermediate electrode in that state, the insulating ring can be easily attached to the intermediate electrode. According to the invention of claim 3,
When one end of the insulating tube is inserted into the rim on the back surface of the first intermediate electrode, the insulating tube is positioned and held, so that the mounting operation can be performed without taking a hand to prevent the O-ring from dropping. When the rim on the front of the part is inserted and positioned and held, the mounting work can be performed without taking a hand to prevent the O-ring from dropping. Therefore, the workability of the assembling work is good and the physical fatigue is small.

【0015】[0015]

【発明の実施の形態】つぎに、本発明の実施形態を図面
に基づき説明する。図1は本発明の一実施形態に係わる
プラズマ源10の縦断面図、図2はセット部材80まわ
りの拡大断面図、図3はセット部材80の一例の正面
図、図4はセット部材の他の例80A の正面図、図5は絶
縁管15の取付構造の拡大断面図、図6は図5における
VI線矢視図である。
Next, embodiments of the present invention will be described with reference to the drawings. 1 is a longitudinal sectional view of a plasma source 10 according to an embodiment of the present invention, FIG. 2 is an enlarged sectional view around a set member 80, FIG. 3 is a front view of an example of the set member 80, and FIG. FIG. 5 is an enlarged sectional view of the mounting structure of the insulating tube 15, and FIG.
FIG. 6 is a view taken along line VI.

【0016】本発明のプラズマ源は、図8に示す真空成
膜装置にも適用できるし、図7に示す真空成膜装置にも
適用することができる。図7の装置における真空容器1
やガイド部2、ステアリングコイル3、ハース5など
は、図5の装置と実質同一である。
The plasma source of the present invention can be applied to the vacuum film forming apparatus shown in FIG. 8 and also to the vacuum film forming apparatus shown in FIG. Vacuum container 1 in the device of FIG.
The guide 2, the steering coil 3, the hearth 5, and the like are substantially the same as those in the apparatus shown in FIG.

【0017】図7の装置では、搬送機構40を具体的に
示している。搬送機構40は、搬送室本体41と、該搬
送室本体41のハンドリング室側に設けられた開口部4
2と、搬送室本体41の長手方向に略全長にわたって設
けられた走行レール43と、該走行レール43上を走行
する搬送台車44と、該搬送台車44を移動させるチェ
ーン(またはベルト)45と、チェーン45に係合する
スプロケット47と、スプロケット47を駆動する可変
速なモータとから成る。なお、搬送台車44の被処理材
Bの載置面に対応する領域には、開口部が形成されてい
る。これは、搬送台車44上の被処理材Bの下面側を真
空容器1側に露出させるためのものである。
In the apparatus shown in FIG. 7, the transport mechanism 40 is specifically shown. The transfer mechanism 40 includes a transfer chamber main body 41 and an opening 4 provided on the handling chamber side of the transfer chamber main body 41.
2, a traveling rail 43 provided over substantially the entire length in the longitudinal direction of the transport chamber main body 41, a transport vehicle 44 traveling on the travel rail 43, and a chain (or belt) 45 for moving the transport vehicle 44; It comprises a sprocket 47 that engages with the chain 45, and a variable speed motor that drives the sprocket 47. Note that an opening is formed in a region of the transport trolley 44 corresponding to the mounting surface of the workpiece B. This is for exposing the lower surface side of the material to be processed B on the transport carriage 44 to the vacuum vessel 1 side.

【0018】つぎに、本実施形態のプラズマ源10を詳
細に説明する。図1に示すように、第1中間電極11も
第2中間電極12も、背面側の外周縁部を円周状に切り
取った形状の段差31、32を形成し、永久磁石やコイ
ルを収容した中央部に比較し厚さが薄くなった第1・第
2フランジ部33、34を設けている。そして、この第
1・第2フランジ部33、34にボルト孔35、36を
円周方向等間隔に形成している。
Next, the plasma source 10 of the present embodiment will be described in detail. As shown in FIG. 1, both the first intermediate electrode 11 and the second intermediate electrode 12 form steps 31 and 32 having a shape in which the outer peripheral edge on the back side is cut off in a circular shape, and house permanent magnets and coils. First and second flange portions 33 and 34 having a smaller thickness than the central portion are provided. Further, bolt holes 35, 36 are formed in the first and second flange portions 33, 34 at regular intervals in the circumferential direction.

【0019】一方、真空容器側のガイド部2(特許請求
の範囲にいう取付部材に相当する)のフランジ部2aに
は雌ネジ孔37が、前記ボルト孔36に対応して設けら
れている。また、第2フランジ部34には前記ボルト孔
34と交互に雌ネジ孔38が形成されている。
On the other hand, a female screw hole 37 is provided in the flange portion 2a of the guide portion 2 (corresponding to an attachment member in the claims) on the vacuum vessel side so as to correspond to the bolt hole 36. Further, female screw holes 38 are formed in the second flange portion 34 alternately with the bolt holes 34.

【0020】前記第1フランジ部33のボルト孔35に
は絶縁スリーブ51と締結ボルト54が挿入され、第2
フランジ部34のボルト孔36には絶縁スリーブ61と
締結ボルト64が挿入される。図2に示すように、前記
絶縁スリーブ61は、受座62と筒部63とが一体に構
成されたものである。前記受座62は締結ボルト64の
頭部65を収める側壁付皿状部である。前記筒部63
は、締結ボルト64のネジ部66より短く、ガイド部2
の表面に当接する長さを有している。
An insulating sleeve 51 and a fastening bolt 54 are inserted into the bolt hole 35 of the first flange 33,
An insulating sleeve 61 and a fastening bolt 64 are inserted into the bolt hole 36 of the flange portion 34. As shown in FIG. 2, the insulating sleeve 61 is configured such that a receiving seat 62 and a tubular portion 63 are integrally formed. The receiving seat 62 is a dish-shaped part with a side wall for accommodating the head 65 of the fastening bolt 64. The cylindrical portion 63
Is shorter than the threaded portion 66 of the fastening bolt 64 and the guide portion 2
Has a length that abuts the surface of the.

【0021】前記第1フランジ部33のボルト孔35に
通される絶縁スリーブ51と締結ボルト54も、前記絶
縁スリーブ61および締結ボルト64と実質同様の構成
である。
The insulating sleeve 51 and the fastening bolt 54 passed through the bolt hole 35 of the first flange 33 have substantially the same structure as the insulating sleeve 61 and the fastening bolt 64.

【0022】図1〜2において、80はセット部材であ
り、前記絶縁リング21、21を第1中間電極11およ
び第2中間電極12の前面に保持する働きを有してい
る。
In FIGS. 1 and 2, reference numeral 80 denotes a set member which has a function of holding the insulating rings 21, 21 on the front surfaces of the first intermediate electrode 11 and the second intermediate electrode 12.

【0023】このセット部材80の詳細を図2〜3に基
づき説明する。セット部材80は、環状リング部81
と、その外周にリム82を形成したもので、リム82の
内径は、第1中間電極11および第2中間電極12の外
周に、締り嵌めで嵌るようになっている。そして、リン
グ部81には、円周方向等間隔で、締結ボルト54、6
4とその絶縁スリーブ51、61を通す孔83が形成さ
れている。
The details of the set member 80 will be described with reference to FIGS. The set member 80 includes an annular ring portion 81
A rim 82 is formed on the outer periphery of the first rim 82, and the inner diameter of the rim 82 is fitted to the outer periphery of the first intermediate electrode 11 and the second intermediate electrode 12 by interference fitting. Then, the fastening bolts 54, 6 are provided on the ring portion 81 at equal intervals in the circumferential direction.
4 and a hole 83 through which the insulating sleeves 51 and 61 pass are formed.

【0024】一方、絶縁リング21には、外周部に段差
23が形成されており、セット部材80の内径は、この
段差23の外径より幾分大きく、リング部81の内周部
分で、絶縁リング21の段差23を押さえて、第1中間
電極11および第2中間電極12の前面に保持するよう
になっている。このため、絶縁リング21の裏面側の溝
24に入れたOリング22は全く落下の心配がない状態
で、組立作業をすることができる。
On the other hand, a step 23 is formed on the outer peripheral portion of the insulating ring 21, and the inner diameter of the set member 80 is slightly larger than the outer diameter of the step 23. The step 23 of the ring 21 is pressed and held on the front surfaces of the first intermediate electrode 11 and the second intermediate electrode 12. For this reason, the assembling work can be performed in a state where the O-ring 22 inserted in the groove 24 on the back surface side of the insulating ring 21 does not have to worry about dropping at all.

【0025】また、セット部材80の厚みは、ガイド部
2に第2中間電極12を組立した状態でのそれらの部材
の隙間と同等もしくは略同等に形成されている。組立状
態で、第2中間電極12とガイド部2のフランジ2aと
の間の距離、および第1中間電極11と第2中間電極1
2との間の距離を一定に保ち、締結ボルト54、64の
ねじ込み時に絶縁リング22の破壊を防止し、かつそれ
らの間の電圧上昇時のスパーク発生を防止できる。
The thickness of the set member 80 is equal to or substantially equal to the gap between those members when the second intermediate electrode 12 is assembled to the guide portion 2. In the assembled state, the distance between the second intermediate electrode 12 and the flange 2a of the guide portion 2, and the first intermediate electrode 11 and the second intermediate electrode 1
2, the insulating ring 22 can be prevented from being broken when the fastening bolts 54 and 64 are screwed, and a spark can be prevented from occurring when the voltage rises between them.

【0026】なお、本発明においてセット部材は、図4
に示すように、リング状でなく、円周方向に不連続な複
数枚の放射状片84からなるセット部材80A であっても
よい。このセット部材80A では、個々の放射状片84の
それぞれに、リム82と円周方向の取付位置に応じて孔
83を形成している。このようなセット部材80A におい
ても、締結ボルト54、64の締込み時の絶縁リング2
2の破壊を防止することができる。また、セット部材8
0を第1、第2中間電極11、12へ支持させる手段と
して、セット部材80のリム82の内径を第1,第2中
間電極11、12の外周に対し締り嵌めで対処する支持
手段を用いたが、別に、セット部材80、80A を第1、
第2中間電極11、12に対し、ボルト等で支持する支
持手段を用いてもよい。
In the present invention, the set member is the same as that shown in FIG.
As shown in FIG. 7, the set member 80A may be formed of a plurality of radial pieces 84 that are discontinuous in the circumferential direction instead of the ring shape. In the setting member 80A, holes 83 are formed in each of the radial pieces 84 in accordance with the rim 82 and the mounting position in the circumferential direction. In such a setting member 80A, the insulating ring 2 when the fastening bolts 54 and 64 are tightened is also used.
2 can be prevented from being destroyed. Also, the set member 8
As means for supporting the first and second intermediate electrodes 11 and 12 to support the inner diameter of the rim 82 of the set member 80 with respect to the outer periphery of the first and second intermediate electrodes 11 and 12, a support means is used. However, separately, the set members 80 and 80A
Support means for supporting the second intermediate electrodes 11 and 12 with bolts or the like may be used.

【0027】つぎに、絶縁管15の取付構造を説明す
る。図5〜6に示すように、絶縁管15の一端を取付け
る第1中間電極11の背面には、Oリング22を入れる
円周状のパッキン溝91が形成されており、そのパッキ
ン溝91より半径方向外側に、リム92が形成されてい
る。このリム92の内径は、絶縁管15の一端の取付フ
ランジ部15a の外周よりわずかに大きくなっている。
Next, the mounting structure of the insulating tube 15 will be described. As shown in FIGS. 5 and 6, a circumferential packing groove 91 for receiving the O-ring 22 is formed on the back surface of the first intermediate electrode 11 to which one end of the insulating tube 15 is attached. A rim 92 is formed on the outside in the direction. The inner diameter of the rim 92 is slightly larger than the outer circumference of the mounting flange 15a at one end of the insulating tube 15.

【0028】また、絶縁管15の他端に取付ける導体板
部19の前面には、Oリング22を入れる円周状のパッ
キン溝93が形成されており、そのパッキン溝93より
半径方向外側に、リム94が形成されている。このリム
94の内径は、絶縁管15の他端の取付フランジ部15b
の外周よりわずかに大きくなっている。
A circumferential packing groove 93 for receiving the O-ring 22 is formed on the front surface of the conductor plate 19 attached to the other end of the insulating tube 15. A rim 94 is formed. The inner diameter of the rim 94 is the same as the mounting flange 15b at the other end of the insulating tube 15.
Slightly larger than the outer circumference.

【0029】前記リム92は、絶縁管15を第1中間電
極11に取付けるとき、絶縁管15の支えと位置決めに
役立つので、絶縁管15を支える肉体的負担が軽くな
り、Oリング22の落下も防止しやすくなる。また、前
記リム94は、導体板部19を絶縁管15の他端に取付
けるとき、導体板部19の支えと位置決めに役立つの
で、導体板部19を支える肉体的負担が軽くなり、Oリ
ング22の落下も防止しやすくなる。
The rim 92 is useful for supporting and positioning the insulating tube 15 when the insulating tube 15 is attached to the first intermediate electrode 11, so that the physical load for supporting the insulating tube 15 is reduced and the O-ring 22 is prevented from falling. It is easier to prevent. Further, the rim 94 is useful for supporting and positioning the conductor plate portion 19 when the conductor plate portion 19 is attached to the other end of the insulating tube 15, so that the physical load for supporting the conductor plate portion 19 is reduced, and the O-ring 22 is provided. It is easy to prevent falling.

【0030】図5〜6において、71は絶縁管15の取
付用フランジで、二つ割りに分かれる割り型になってお
り、ボルト72を通すボルト孔75が適数個形成されて
いる。この取付用フランジ71を絶縁管15の取付フラ
ンジ部15a に当てて、取付ボルト72をボルト孔75に
通して、第1中間電極11の雌ネジ孔77にねじ込む
と、絶縁管15を第1中間電極11に取付けることがで
きる。
In FIGS. 5 and 6, reference numeral 71 denotes a mounting flange for the insulating tube 15, which is divided into two and has an appropriate number of bolt holes 75 through which bolts 72 are passed. When the mounting flange 71 is applied to the mounting flange portion 15a of the insulating tube 15 and the mounting bolt 72 is passed through the bolt hole 75 and screwed into the female screw hole 77 of the first intermediate electrode 11, the insulating tube 15 is brought into the first intermediate position. It can be attached to the electrode 11.

【0031】73は導体板部19の取付用フランジで、
二つ割りに分かれる割り型になっており、ボルト74を
通すボルト孔76が適数個形成されている。この取付用
フランジ73を絶縁管15の取付フランジ部15b に当て
て、取付ボルト74をボルト孔76に通して、導体板部
19の雌ネジ孔78にねじ込むと、導体板部19を絶縁
管15に取付けることができる。
Reference numeral 73 denotes a flange for mounting the conductor plate portion 19,
It is divided into two parts, and an appropriate number of bolt holes 76 for passing bolts 74 are formed. The mounting flange 73 is applied to the mounting flange portion 15b of the insulating tube 15, and the mounting bolt 74 is passed through the bolt hole 76 and screwed into the female screw hole 78 of the conductive plate portion 19. Can be mounted on

【0032】つぎに、上記実施形態のプラズマ源10の
組立て方法を図1に基づき説明する。まず、第2中間電
極12の前面に、表裏両面にOリング22をセットした
絶縁リング21を置き、セット部材80を第2中間電極
12の前面側に嵌め、前記絶縁リング21を固定する。
ついで、第2フランジ部34の各ボルト孔35に絶縁ス
リーブ61と締結ボルト64を挿入する。そして、締結
ボルト64を真空容器側のフランジ部2aの雌ネジ孔3
7にねじ込み、第2中間電極12のみを取付ける。
Next, a method of assembling the plasma source 10 of the above embodiment will be described with reference to FIG. First, on the front surface of the second intermediate electrode 12, an insulating ring 21 on which O-rings 22 are set on both sides is placed, and a set member 80 is fitted on the front surface side of the second intermediate electrode 12, and the insulating ring 21 is fixed.
Next, the insulating sleeve 61 and the fastening bolt 64 are inserted into each of the bolt holes 35 of the second flange portion 34. Then, the fastening bolt 64 is inserted into the female screw hole 3 of the flange portion 2a on the vacuum vessel side.
7, and only the second intermediate electrode 12 is attached.

【0033】つぎに、第1中間電極11の前面に表裏両
面にOリング22をセットした絶縁リング21を置き、
セット部材80を第1中間電極11の前面側に嵌め、前
記絶縁リング21を固定する。ついで、第1フランジ部
33の各ボルト孔35に絶縁スリーブ51と締結ボルト
54を挿入する。そして、締結ボルト54をねじ込む
と、第2中間電極12の背面に第1中間電極11を重ね
て取付ける。
Next, an insulating ring 21 in which O-rings 22 are set on both front and back surfaces is placed on the front surface of the first intermediate electrode 11.
The set member 80 is fitted on the front side of the first intermediate electrode 11, and the insulating ring 21 is fixed. Next, the insulating sleeve 51 and the fastening bolt 54 are inserted into each bolt hole 35 of the first flange portion 33. Then, when the fastening bolt 54 is screwed in, the first intermediate electrode 11 is mounted on the back surface of the second intermediate electrode 12 so as to overlap.

【0034】さらに、絶縁管15の一端を第1中間電極
11のリム92内に入れ、取付用フランジ71を介して
ボルト72で締付け、さらに絶縁管15の他端に導体板
部19のリム94を外挿し、取付用フランジ73を介し
てボルト74で締付ければよい。
Further, one end of the insulating tube 15 is put into the rim 92 of the first intermediate electrode 11 and tightened with a bolt 72 via a mounting flange 71, and the rim 94 of the conductor plate portion 19 is attached to the other end of the insulating tube 15. May be extrapolated and tightened with bolts 74 via the mounting flange 73.

【0035】このように、本実施形態のプラズマ源10
によれば、セット部材80で、Oリング22の落下を防
止しやすくなるので、作業性が向上する。また、絶縁管
15の第1中間電極11への取付けと導体板部19の絶
縁管15への取付けも、容易に行え、作業性が向上す
る。
As described above, the plasma source 10 of this embodiment is
According to this, the set member 80 makes it easier to prevent the O-ring 22 from dropping, thereby improving workability. In addition, attachment of the insulating tube 15 to the first intermediate electrode 11 and attachment of the conductor plate portion 19 to the insulating tube 15 can be easily performed, and workability is improved.

【0036】そして、以上のように組付けた状態で、第
2中間電極12と真空容器1側のガイド部2の間、およ
び第1中間電極11と第2中間電極12の間の距離を固
定できるため、締結ボルト54、64の締込みすぎによ
る第1・第2絶縁リング21の破損を防止できる。さら
に、第2中間電極12と真空容器1のガイド部2との間
および第1中間電極11と第2中間電極12の間の空間
が無くなるので電圧上昇によるスパークを防止すること
ができる。
In the state assembled as described above, the distance between the second intermediate electrode 12 and the guide portion 2 on the vacuum vessel 1 side and the distance between the first intermediate electrode 11 and the second intermediate electrode 12 are fixed. Therefore, it is possible to prevent the first and second insulating rings 21 from being damaged due to excessive tightening of the fastening bolts 54 and 64. Further, since there is no space between the second intermediate electrode 12 and the guide portion 2 of the vacuum vessel 1 and between the first intermediate electrode 11 and the second intermediate electrode 12, it is possible to prevent a spark due to an increase in voltage.

【0037】[0037]

【発明の効果】請求項1の真空成膜装置のプラズマ源に
よれば、Oリングをセットした絶縁リングの落下のおそ
れがないので、取付作業が容易に行え、セット部材によ
り、締結ボルトの締込みすぎによる絶縁リングの破損を
防止でき、第2中間電極と真空容器との間および第1中
間電極と第2中間電極の間で電圧上昇によるスパークを
防止することができる。請求項2の発明によれば、各リ
ング状のセット部材の内周に絶縁リングを嵌め、その状
態で中間電極に取付られるので、絶縁リングの中間電極
への取付けを容易に行える。請求項3の真空成膜装置の
プラズマ源によれば、Oリングの落下防止に手をとられ
ることなく絶縁管の取付作業ができ、同様にも導体板部
のも、Oリングの落下防止に手をとられることなく取付
作業ができ、組立作業の作業性が良くなり肉体的疲労も
少なくなる。
According to the plasma source of the vacuum film forming apparatus of the first aspect, since there is no danger of the insulating ring on which the O-ring is set falling, the mounting operation can be easily performed, and the fastening bolt is tightened by the set member. Breakage of the insulating ring due to excessive penetration can be prevented, and sparking due to a rise in voltage between the second intermediate electrode and the vacuum vessel and between the first intermediate electrode and the second intermediate electrode can be prevented. According to the second aspect of the present invention, since the insulating ring is fitted to the inner periphery of each ring-shaped set member and is attached to the intermediate electrode in that state, the insulating ring can be easily attached to the intermediate electrode. According to the plasma source of the vacuum film forming apparatus according to the third aspect, the insulating tube can be attached without preventing the O-ring from falling, and the conductor plate portion can also be prevented from falling by the O-ring. The mounting work can be performed without taking a hand, so that the workability of the assembling work is improved and the physical fatigue is reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態に係わるプラズマ源10の
縦断面図である。
FIG. 1 is a longitudinal sectional view of a plasma source 10 according to an embodiment of the present invention.

【図2】セット部材80まわりの拡大断面図である。FIG. 2 is an enlarged cross-sectional view around a set member 80.

【図3】セット部材80の正面図である。FIG. 3 is a front view of a setting member 80.

【図4】セット部材の他の例80A の正面図である。FIG. 4 is a front view of another example 80A of the setting member.

【図5】絶縁管15の取付構造を示す拡大断面図であ
る。
FIG. 5 is an enlarged sectional view showing a mounting structure of the insulating tube 15.

【図6】図5におけるVII 線矢視図である。FIG. 6 is a view taken along line VII in FIG. 5;

【図7】本発明が適用される真空成膜装置の一例の断面
図である。
FIG. 7 is a sectional view of an example of a vacuum film forming apparatus to which the present invention is applied.

【図8】真空成膜装置の基本構成の説明図である。FIG. 8 is an explanatory diagram of a basic configuration of a vacuum film forming apparatus.

【図9】従来のプラズマ源の縦断面図である。FIG. 9 is a longitudinal sectional view of a conventional plasma source.

【符号の説明】[Explanation of symbols]

10 プラズマ源 11 第1中間電極 12 第2中間電極 15 絶縁管 19 導体板部 31、32 段差 33、34 フランジ部 35、36 ボルト孔 51、61 絶縁スリーブ 54、64 締結ボルト 71、73 取付用フランジ 72、74 ボルト 80 セット部材 DESCRIPTION OF SYMBOLS 10 Plasma source 11 1st intermediate electrode 12 2nd intermediate electrode 15 Insulation tube 19 Conductor plate part 31, 32 Step 33, 34 Flange part 35, 36 Bolt hole 51, 61 Insulation sleeve 54, 64 Fastening bolt 71, 73 Mounting flange 72, 74 bolt 80 set member

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】第2中間電極と、第2中間電極の背面側に
重ねて取付けられた第1中間電極と、該第1中間電極の
背面側に取付けられた絶縁管と該絶縁管の入口側に取付
けられた導体板部とからなる真空成膜装置のプラズマ源
であって、前記第2中間電極の前面と真空容器側の取付
部材との間に、表裏両面にOリングをセットした絶縁リ
ングを介在させ、かつ前記第2中間電極の背面と前記第
1中間電極の前面との間に、表裏両面にOリングをセッ
トした絶縁リングを介在させ、前記各絶縁リングがいず
れもセット部材を用いて前記第1・第2中間電極の前面
に取付けられていることを特徴とする真空成膜装置のプ
ラズマ源。
1. A second intermediate electrode, a first intermediate electrode mounted on the back side of the second intermediate electrode, an insulating tube mounted on the back side of the first intermediate electrode, and an inlet of the insulating tube. A plasma source for a vacuum film forming apparatus comprising: a conductive plate portion attached to the side; and an insulating member in which O-rings are set on both front and back surfaces between the front surface of the second intermediate electrode and the mounting member on the vacuum vessel side. A ring is interposed, and an insulating ring having O-rings set on both front and back surfaces is interposed between the back surface of the second intermediate electrode and the front surface of the first intermediate electrode, and each of the insulating rings serves as a set member. A plasma source for a vacuum film forming apparatus, wherein said plasma source is mounted on a front surface of said first and second intermediate electrodes.
【請求項2】前記各セット部材は、いずれもリング状に
形成され、各中間電極に支持手段を介して取付られ、前
記各絶縁リングは、いずれも、外周に段差を有し、該段
差は、前記各セット部材の内径に嵌る外径を有している
ことを特徴とする請求項1記載の真空成膜装置のプラズ
マ源。
2. Each of said set members is formed in a ring shape, and is attached to each intermediate electrode via a support means. Each of said insulating rings has a step on its outer periphery, and said step is 2. The plasma source according to claim 1, wherein the plasma source has an outer diameter that fits into the inner diameter of each of the set members.
【請求項3】第2中間電極と、第2中間電極の背面側に
重ねて取付けられた第1中間電極と、該第1中間電極の
背面側に取付あれた絶縁管と該絶縁管の入口側に取付ら
れた導体板部とからなる真空成膜装置のプラズマ源であ
って、前記第1中間電極の背面側に前記絶縁管の出口側
端部を収容して位置決めするリムが形成され、かつ前記
導体板部の前面側に、前記絶縁管の入口側端部収容して
位置決めするリムが形成されていることを特徴とする真
空成膜装置のプラズマ源。
3. A second intermediate electrode, a first intermediate electrode mounted on the back side of the second intermediate electrode, an insulating tube mounted on the back side of the first intermediate electrode, and an inlet of the insulating tube. A rim for accommodating and positioning the outlet end of the insulating tube on the back side of the first intermediate electrode, comprising: A rim for accommodating and positioning an end of the insulating tube on the inlet side is formed on a front side of the conductor plate portion.
JP10124516A 1998-05-07 1998-05-07 Plasma source of vacuum film forming device Pending JPH11315371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10124516A JPH11315371A (en) 1998-05-07 1998-05-07 Plasma source of vacuum film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10124516A JPH11315371A (en) 1998-05-07 1998-05-07 Plasma source of vacuum film forming device

Publications (1)

Publication Number Publication Date
JPH11315371A true JPH11315371A (en) 1999-11-16

Family

ID=14887422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10124516A Pending JPH11315371A (en) 1998-05-07 1998-05-07 Plasma source of vacuum film forming device

Country Status (1)

Country Link
JP (1) JPH11315371A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008038248A (en) * 2006-07-12 2008-02-21 Fuji Electric Holdings Co Ltd Plasma processing apparatus
WO2008032489A1 (en) * 2006-09-11 2008-03-20 Shinmaywa Industries, Ltd. Structure for attaching plasma gun to chamber
JP2008066241A (en) * 2006-09-11 2008-03-21 Shin Meiwa Ind Co Ltd Intermediate electrode unit for plasma gun and plasma gun provided with the same
JP2008305724A (en) * 2007-06-08 2008-12-18 Sumitomo Heavy Ind Ltd Plasma gun
JP2009176612A (en) * 2008-01-25 2009-08-06 Shin Meiwa Ind Co Ltd Plasma gun

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008038248A (en) * 2006-07-12 2008-02-21 Fuji Electric Holdings Co Ltd Plasma processing apparatus
WO2008032489A1 (en) * 2006-09-11 2008-03-20 Shinmaywa Industries, Ltd. Structure for attaching plasma gun to chamber
JP2008066240A (en) * 2006-09-11 2008-03-21 Shin Meiwa Ind Co Ltd Mounting structure of plasma gun into chamber
JP2008066241A (en) * 2006-09-11 2008-03-21 Shin Meiwa Ind Co Ltd Intermediate electrode unit for plasma gun and plasma gun provided with the same
JP2008305724A (en) * 2007-06-08 2008-12-18 Sumitomo Heavy Ind Ltd Plasma gun
JP2009176612A (en) * 2008-01-25 2009-08-06 Shin Meiwa Ind Co Ltd Plasma gun

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