JP3175835B2

JP3175835B2 - Embedded coil for plasma generation

Info

Publication number: JP3175835B2
Application number: JP54025297A
Authority: JP
Inventors: アナンサスブラマニ，; ジョンフォースター，; ブラッドリー，オー．スティムソン，; セルジオエデルスタイン，; ハワードグルーンズ，; アヴィテップマン，; ゼンシュ，
Original assignee: アプライドマテリアルズ，インコーポレイテッド
Priority date: 1996-05-09
Filing date: 1997-05-08
Publication date: 2001-06-11
Anticipated expiration: 2017-05-08
Also published as: JPH10510676A; EP0845151A1; KR100489917B1; TW324831B; KR19990028803A; WO1997042648A1

Description

【発明の詳細な説明】関連出願この出願は、同時継続中の出願であるところの、1996
年５月９日に出願された、出願番号第08/647,182号、発
明の名称「プラズマ発生用埋込み形コイル」の一部継続
出願である（Attorney Docket No.1186/PVD/DV）。Detailed Description of the Invention Related Application This application is a co-pending application, 1996
Application No. 08 / 647,182, filed on May 9, 2008, is a continuation-in-part application of the title of "Embedded Coil for Plasma Generation" (Attorney Docket No. 1186 / PVD / DV).

発明の分野この発明は、プラズマ発生装置に関し、より詳細に
は、半導体デバイス製造においてプラズマを発生させる
ための方法と装置に関する。FIELD OF THE INVENTION The present invention relates to plasma generators, and more particularly, to a method and apparatus for generating plasma in semiconductor device manufacturing.

発明の背景高周波（RF）発生プラズマは、表面処理、堆積、およ
びエッチングプロセスを含む種々の半導体製造装置プロ
セスに用いられる、エネルギイオンや活性化原子の適切
なソースとなってきた。例えば、スパッタ堆積プロセス
を用いて半導体ウェーハ上に材料を堆積させるには、負
のバイアスを掛けられたスパッターターゲット材料の近
傍にプラズマを生成する。プラズマ内に生成されたイオ
ンは、ターゲットの表面に衝撃を与えて、ターゲットか
ら材料を追い出す、すなわち「スパッタ」する。スパッ
タされた材料は、引き続き搬送され、半導体表面上へ堆
積する。BACKGROUND OF THE INVENTION Radio frequency (RF) generated plasma has become a suitable source of energetic ions and activated atoms for use in various semiconductor manufacturing equipment processes, including surface treatment, deposition, and etching processes. For example, to deposit material on a semiconductor wafer using a sputter deposition process, a plasma is generated near a negatively biased sputter target material. The ions generated in the plasma bombard the surface of the target, driving material away from the target, or "sputtering." The sputtered material is subsequently transported and deposited on the semiconductor surface.

スパッタされた材料は、基板面に対して斜めに、ター
ゲットから被堆積基板への直線経路を飛来する傾向があ
る。その結果、深さ対幅、のアスペクト比の大きい溝や
穴を持つ半導体デバイスのエッチングされた溝や穴に堆
積された材料がブリッジを形成し、堆積層内に望ましく
ないキャビティができる可能性がある。そのようなキャ
ビティを防止するため、スパッタされた材料がプラズマ
によって十分にイオン化された場合、基板または基板サ
ポートを負に帯電させ、垂直方向に向けられた適当な平
行化電界を基板近傍に掛けることによって、スパッタさ
れた材料を、ターゲットと基板との間の実質的に垂直な
経路に「平行化」することができる。しかし、低密度の
プラズマによってスパッタされた材料のイオン化度は、
しばしば１％未満であって、これでは多数のキャビティ
の形成は避けられない。従って、堆積層内の望ましくな
いキャビティ形成の程度を減らすため、プラズマ密度を
高めてスパッタされた材料のイオン化率を高めることが
求められる。この明細書において、「高密度プラズマ」
とは、電子密度とイオン化密度の高いものを意味する。Sputtered material tends to fly a straight path from the target to the deposition substrate at an angle to the substrate surface. As a result, the material deposited in the etched grooves or holes of semiconductor devices having large depth-to-width, aspect ratio grooves or holes can form bridges and create undesirable cavities in the deposited layer. is there. To prevent such cavities, if the sputtered material is sufficiently ionized by the plasma, negatively charge the substrate or substrate support and apply an appropriate vertically oriented collimating field near the substrate. This allows the sputtered material to be "parallelized" to a substantially vertical path between the target and the substrate. However, the degree of ionization of the material sputtered by low density plasma is
Often less than 1%, this inevitably creates a large number of cavities. Accordingly, there is a need to increase the plasma density to increase the ionization rate of sputtered material in order to reduce the degree of undesirable cavity formation in the deposited layer. In this specification, "dense plasma"
Means that the electron density and the ionization density are high.

RF電界を用いてプラズマを励起する公知の方法とし
て、容量結合、誘導結合、およびウェーブ加熱などがあ
る。標準的な誘導結合プラズマ（ICP）発生装置におい
ては、プラズマを取り囲むコイルを流れるRF電流がプラ
ズマ内に電磁電流を誘導する。これらの電流は、オーム
加熱によって導電性のプラズマを加熱し、その結果プラ
ズマが定常状態に維持される。例えば米国特許第4,362,
632号に示されているように、電流は、インピーダンス
マッチングネットワークを介してコイルへ結合されたRF
発生装置によって供給され、その結果、コイルは変圧器
の一次巻き線として作用する。プラズマは、変圧器の一
回巻きの二次巻き線として作用する。Known methods for exciting a plasma using an RF electric field include capacitive coupling, inductive coupling, and wave heating. In a standard inductively coupled plasma (ICP) generator, an RF current flowing through a coil surrounding the plasma induces an electromagnetic current in the plasma. These currents heat the conductive plasma by ohmic heating, so that the plasma is maintained in a steady state. For example, U.S. Pat.
As shown in No. 632, the current is coupled to the RF coupled to the coil via an impedance matching network.
Supplied by the generator, so that the coil acts as the primary winding of the transformer. The plasma acts as a single turn secondary winding of the transformer.

コイルからプラズマへ結合されているエネルギーを最
大にするため、コイルをプラズマ自身にできるだけ近付
けて配置することが望ましい。しかし、同時にチャンバ
内部の洗浄を容易にして内面から放射される微粒子を最
少にするため、スパッタされる材料に晒されるチャンバ
取付け具や他の部品の数を少なくすることも望ましい。
内面から放射されるこれら微粒子は、ウェーハ自体の上
に落ち、製品を汚染する可能性がある。従って、多くの
スパッタリングチャンバは、ターゲットと、ウェーハを
支持するペデスタルとの間のプラズマ生成領域を取り囲
む、ほぼ環状のシールドを備えている。このシールド
は、滑らかで緩やかに湾曲した面を備えているので、洗
浄が比較的容易で、スパッタリング材料がチャンバ内部
に堆積するのを防止する。これに対して、本発明の発明
者たちは、コイルと、コイル何れの支持構造も、比較的
きつい湾曲した表面を有する傾向があり、コイルとその
支持構造に堆積した材料の洗浄除去がより困難であろ
う。更に、シールドの滑らかで緩やかに湾曲した面は、
コイルとその支持構造のきついカーブを描く表面よりも
放射する微粒子が少ないと考えられる。To maximize the energy coupled from the coil to the plasma, it is desirable to place the coil as close as possible to the plasma itself. However, it is also desirable to reduce the number of chamber fixtures and other components that are exposed to the sputtered material to simultaneously facilitate cleaning of the interior of the chamber and minimize particulates emitted from the interior surface.
These particulates emitted from the inner surface can fall on the wafer itself and contaminate the product. Accordingly, many sputtering chambers include a substantially annular shield surrounding a plasma generation region between a target and a pedestal supporting a wafer. The shield has a smooth, gently curved surface that is relatively easy to clean and prevents sputtered material from accumulating inside the chamber. In contrast, the inventors of the present invention have found that both the coil and the supporting structure of the coil tend to have a relatively tightly curved surface, making it more difficult to clean and remove the material deposited on the coil and its supporting structure. Will. Furthermore, the smooth, gently curved surface of the shield
It is thought that there are less particles radiating than the surface of the coil and its supporting structure that draws a tight curve.

このように、一方では、（この出願の譲受人へ譲渡さ
れ、引用によって本明細書の一部とする、同時係属中の
米国特許出願、出願番号第08/559,345号、出願日1995年
11月15日、発明の名称「プラズマ内にヘリコンウェーブ
を発射するための方法と装置」に記載されているよう
に）堆積される材料からコイルがシールドされるよう
に、コイルをシールドの外側に配置することが望まし
い。そのような構成は、コイルとその支持構造体からの
微粒子の発生を最少にし、チャンバの洗浄を容易にす
る。他方、プラズマからの離間による、或いはシールド
自体による減衰を避け、もって、コイルからプラズマま
でのエネルギ移送を最大にするため、コイルをシールド
内のプラズマ生成領域にできるだけ近付けて配置するこ
とが望ましい。従って、微粒子の発生を最少にして洗浄
を容易にしつつ、コイルからプラズマまでのエネルギー
移送を増加させることは、これまで困難であった。Thus, on the one hand, (co-pending U.S. patent application Ser. No. 08 / 559,345, filed 1995, assigned to the assignee of this application and incorporated herein by reference)
On November 15, the coil was placed outside the shield so that the coil was shielded from the material to be deposited) (as described in the title of the invention "Method and Apparatus for Launching Helicon Waves in Plasma"). It is desirable to arrange. Such an arrangement minimizes the generation of particulates from the coil and its support structure and facilitates cleaning of the chamber. On the other hand, it is desirable to place the coil as close as possible to the plasma generation area within the shield to avoid attenuation due to separation from the plasma or the shield itself, and thus maximize energy transfer from the coil to the plasma. Therefore, it has been difficult to increase the energy transfer from the coil to the plasma while minimizing the generation of fine particles and facilitating the cleaning.

好ましい実施例の概要本発明は、上記制限を実用上排除し、チャンバ内のプ
ラズマ生成のための改良された方法と装置を提供するこ
とを目的とする。SUMMARY OF THE PREFERRED EMBODIMENTS The present invention aims to practically eliminate the above limitations and to provide an improved method and apparatus for plasma generation in a chamber.

上記およびその他の目的と利点は、本発明の一態様に
従って、コイルへのターゲット材料の堆積を最小にする
ように、ターゲットのスパッタリング面に対して引っ込
んでいる（is recessed）コイルからの電磁エネルギー
を誘導結合する、プラズマ発生装置を提供することであ
る。更に、このコイルは、コイル上に堆積し、その後コ
イルからワークピース上へ放出される何れのターゲット
材料も最少になるように、ペデスタル（支持部材）の周
囲およびペデスタル上に支持されるワークピースの堆積
面に対して引っ込んでいる。その結果、コイルから放出
される微粒子物質によるワークピースの汚染が低減され
る。These and other objects and advantages, in accordance with one aspect of the present invention, are to reduce the electromagnetic energy from a coil that is recessed relative to the sputtering surface of the target so as to minimize deposition of target material on the coil. An inductively coupled plasma generator is provided. In addition, the coil is positioned around the pedestal and on the workpiece supported on the pedestal so that any target material deposited on the coil and subsequently released from the coil onto the workpiece is minimized. It is recessed with respect to the deposition surface. As a result, contamination of the workpiece by particulate matter emitted from the coil is reduced.

一実施例では、ターゲット材料のかなりの部分がコイ
ル上へ堆積しないように、コイルはコイルの上方に位置
するダークスペースシールドによって堆積材料から部分
的にシールドされている。他の実施例では、コイルは、
コイルを堆積材料から保護するためのコイルチャンバを
備える別のアダプタリングによって担持されている。更
に、コイルチャンバは、ワークピースの汚染低減のた
め、コイルによって放出される微粒子物質を捕捉するた
め、コイルの下方に位置するフロアを有する。更にな
お、アダプタリングのコイルチャンバは、シールドとは
別になっている。その結果、シールドを別に洗浄する、
或いは廃棄することができ、それによってシールドとチ
ャンバの洗浄が実質的に容易になり、シールド自体のコ
ストも低減できる。In one embodiment, the coil is partially shielded from the deposited material by a dark space shield located above the coil so that a significant portion of the target material does not deposit on the coil. In another embodiment, the coil is
It is carried by another adapter ring with a coil chamber for protecting the coil from the deposited material. In addition, the coil chamber has a floor located below the coil to trap particulate matter emitted by the coil to reduce contamination of the workpiece. Still further, the coil chamber of the adapter ring is separate from the shield. As a result, the shield is washed separately,
Alternatively, it can be discarded, which substantially facilitates cleaning of the shield and chamber, and also reduces the cost of the shield itself.

本発明の他の態様によると、コイルは、シールド上ま
たはアダプタリングチャンバ内に内部迷路構造を有する
複数の新規のコイル隔離部材（coil standoff）とRFフ
ィードスルー隔離部材によって担持される。以下に説明
するように、この迷路構造は、通常は接地されているシ
ールドへコイルからの短絡（ショート）を起こす可能性
のあるコイルからシールドへの堆積材料の完全導通経路
が形成されることを防止しつつ、ターゲットからコイル
隔離部材上へ、伝導性材料の反復堆積を許容する。更
に、この迷路構造は、隔離部材の高さを低くすることを
可能にし、これによって、チャンバ全体のサイズを小さ
くすることができる。According to another aspect of the invention, the coil is carried by a plurality of novel coil standoffs and RF feedthrough isolation members having an internal maze structure on the shield or in the adapter ring chamber. As will be explained below, this maze structure creates a complete conduction path for the deposited material from the coil to the shield, which can cause a short from the coil to the shield, which is normally grounded. Prevention while allowing repeated deposition of conductive material from the target onto the coil isolation member. Furthermore, this maze structure allows the height of the isolation member to be reduced, thereby reducing the overall size of the chamber.

図面の簡単な説明図１は、本発明の一実施例によるプラズマ発生チャン
バの一部破断斜視図であり、図２は、真空チャンバに取付けた状態の図１に示した
プラズマ発生チャンバの部分断面図であり、図３は、この発明のもう一つの実施例によるプラズマ
発生チャンバの部分断面図であり、図４は、図２のプラズマ発生チャンバのコイル隔離部
材の断面図であり、図５は、図２のプラズマ発生チャンバのコイルフィー
ルドスルー・隔離部材の断面図であり、図６は、図１のプラズマ発生チャンバの電気的相互接
続の略図であり、図７は、他の実施例によるコイル隔離部材の断面図で
あり、図８は、他の実施例によるコイルフィールドスルー隔
離部材の断面図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a partially cutaway perspective view of a plasma generation chamber according to an embodiment of the present invention. FIG. 2 is a partial cross section of the plasma generation chamber shown in FIG. FIG. 3 is a partial cross-sectional view of a plasma generation chamber according to another embodiment of the present invention, FIG. 4 is a cross-sectional view of a coil isolation member of the plasma generation chamber of FIG. 2, and FIG. FIG. 6 is a cross-sectional view of a coil field through / isolation member of the plasma generation chamber of FIG. 2, FIG. 6 is a schematic diagram of an electrical interconnection of the plasma generation chamber of FIG. 1, and FIG. FIG. 8 is a sectional view of a separating member, and FIG. 8 is a sectional view of a coil field through separating member according to another embodiment.

図面の詳細な説明まず、図１と図２を参照すると、本発明の第１実施例
によるプラズマ発生装置は、真空を維持することができ
る実質的に円筒形のプラズマチャンバ100を備えるとと
もに、本実施例において、シールド106によってチャン
バ壁108の内側に担持されるシングルヘリカルコイル104
を備える。このシールド106は、プラズマチャンバ100内
部において堆積する材料から真空チャンバ102の内壁108
（図２）を保護する。DETAILED DESCRIPTION OF THE DRAWINGS Referring first to FIGS. 1 and 2, a plasma generating apparatus according to a first embodiment of the present invention includes a substantially cylindrical plasma chamber 100 capable of maintaining a vacuum, In an embodiment, a single helical coil 104 carried inside a chamber wall 108 by a shield 106
Is provided. The shield 106 is made of a material that is deposited inside the plasma
(FIG. 2).

高周波（RF）発生装置からのRFエネルギーが、コイル
104からプラズマチャンバ100の内部へ放射され、プラズ
マチャンバ100のプラズマ閉じ込め領域内のプラズマへ
エネルギーを与える。エネルギーを与えられたプラズマ
は、プラズマイオンフラックスを発生し、このフラック
スは、プラズマチャンバ100の上方に位置決めされ負の
バイアスをかけられたターゲット110に衝突する。プラ
ズマイオンは、ターゲット100から材料を追い出し、追
い出された材料は、プラズマチャンバ100の底にペデス
タル114によって支持されている他のワークピース112ま
たはウェーハ上へ堆積する。以下に詳細に説明するよう
に、この発明の一態様によれば、コイル104は、コイル1
04上へのターゲット材料の堆積を最少にするように、タ
ーゲット110の周囲より引っ込んでいる（is recesse
d）。更に、コイル104は、コイル104によって後にワー
クピース112上へ放射されるターゲット材料を最少にす
るように、チャック周辺またはペデスタル114と、その
上に支持されているワークピース112より引っ込んでい
る。その結果、コイル104が放射する微粒子物質による
ワークピース112の汚染が低減される。RF energy from the radio frequency (RF) generator
Radiated from 104 into the interior of the plasma chamber 100, it provides energy to the plasma in the plasma confinement region of the plasma chamber 100. The energized plasma generates a plasma ion flux which strikes a negatively biased target 110 positioned above the plasma chamber 100. The plasma ions expel material from the target 100 and the expelled material deposits on another workpiece 112 or wafer supported by a pedestal 114 at the bottom of the plasma chamber 100. As described in detail below, according to one aspect of the present invention, the coil 104 comprises the coil 1
04 is recessed from the periphery of the target 110 to minimize the deposition of target material on the
d). Further, the coil 104 is recessed from the chuck periphery or pedestal 114 and the workpiece 112 supported thereon so as to minimize target material that is subsequently radiated by the coil 104 onto the workpiece 112. As a result, contamination of the workpiece 112 by the particulate matter emitted by the coil 104 is reduced.

この発明のもう一つの態様によれば、コイル104は、
シールド106上に複数の新規コイル隔離部材120によって
担持され、このコイル隔離部材120は、コイル104を電気
的に支持シールド106から絶縁している。以下に詳細に
説明するように、絶縁コイル支持隔離部材120は、内部
迷路構造を持ち、これによって、コイル104からシール
ド106への堆積材料の完全導通経路の形成を防止しつ
つ、ターゲット110からコイル隔離部材120へ導電材料を
繰り返し堆積させることができ、完全導通経路は、コイ
ル104を（通常は接地されている）シールド106へショー
トさせる可能性がある。According to another aspect of the invention, the coil 104 comprises:
Carried on the shield 106 is a plurality of new coil isolation members 120 that electrically insulate the coil 104 from the support shield 106. As will be described in more detail below, the insulating coil support and isolation member 120 has an internal maze structure, thereby preventing the formation of a complete conduction path of the deposited material from the coil 104 to the shield 106 while maintaining the coil 110 away from the target 110. The conductive material can be repeatedly deposited on the isolation member 120, and the full conduction path can short the coil 104 to the shield 106 (which is typically grounded).

コイルをサーキットパスとして使用可能にするため、
RFパワーをチャンバ壁とシールド106を通してコイル104
の対向両端へ通す必要がある。チャンバの外側に配置さ
れることが望ましい発生装置からRF電流を供給するた
め、真空フィードスルー（図示せず）がチャンバ壁を貫
通して延在する。シールド106を介してRF電流を通すフ
ィードスルー124、124aは、シールド106の両側が同一圧
力（pressure）であるので、真空フィードスルーである
必要はない。しかしこれらは、その上に堆積層が形成さ
れてコイル104からシールド106へ導電経路が形成される
ことを防ぐように、チャンバ環境に対して保護されるこ
とが是非必要である。To make the coil available as a circuit path,
RF power through coil 104 through chamber wall and shield 106
It is necessary to pass to the opposite ends. A vacuum feedthrough (not shown) extends through the chamber wall to supply RF current from a generator that is preferably located outside the chamber. Feedthroughs 124, 124a, which pass RF current through shield 106, need not be vacuum feedthroughs because both sides of shield 106 are at the same pressure. However, it is imperative that they be protected against the chamber environment so as to prevent a deposited layer from forming thereon and forming a conductive path from the coil 104 to the shield 106.

RFパワーは、絶縁フィードスルー隔離部材124によっ
て支持されたフィードスルー122によってコイル104へ供
給される。フィードスルー隔離部材124は、コイル・隔
離部材120と同様に、コイル104をシールド106へショー
トさせる恐れのある導通経路を形成することなく、ター
ゲットからの導電性材料をフィードスルー隔離部材124
上へ、繰り返し堆積させることを可能にする。RF power is supplied to the coil 104 by a feedthrough 122 supported by an insulating feedthrough isolation member 124. The feed-through isolation member 124, like the coil and isolation member 120, feeds the conductive material from the target through the feed-through isolation member 124 without forming a conductive path that could short the coil 104 to the shield 106.
It allows for repeated deposition on top.

図２は、ある物理蒸着（PVD＝physical vapor deposi
tion）システムの真空チャンバに取付けたプラズマチャ
ンバ100を示す。本発明のプラズマ発生装置を、説明の
便宜上、PVDシステムに関連して説明するが、本発明に
よるプラズマ発生装置は、プラズマエッチング、化学蒸
着（CVD）、および種々の表面処理プロセスを含むプラ
ズマを利用する他の半導体製造プロセス用に適してい
る。FIG. 2 shows a physical vapor deposition (PVD).
Option) shows a plasma chamber 100 attached to the vacuum chamber of the system. Although the plasma generator of the present invention is described for convenience of description in connection with a PVD system, the plasma generator according to the present invention utilizes a plasma including plasma etching, chemical vapor deposition (CVD), and various surface treatment processes. It is suitable for other semiconductor manufacturing processes.

図２からよく分かるように、プラズマチャンバ100
は、上方に負のバイアスにかけられたターゲット110に
対して接地平面（ground plane）を提供する、ダークス
ペースシールドリンク130を備える。更に、シールドリ
ング130は、ターゲットの外縁のスパッタリングを低減
するためターゲットの外縁をプラズマに対してシールド
（遮蔽）する。本発明の一態様によれば、ダークスペー
スシールド130は、コイル104（およびコイル支持隔離部
材120とフィードスルー隔離部材124）を、ターゲット11
0からスパッターされる材料に対してシールドするよう
に配置されているので、もう一つの機能を発揮する。ス
パッターされる材料の一部が、プラズマチャンバ100の
垂直軸に対して傾斜角で飛来するので、ダークスペース
シールドリング130は、コイル104とその関連する支持構
造を、スパッターされる材料のすべてに対して完全にシ
ールドする訳ではない。しかし、スパッターされる材料
の大部分は、チャンバの垂直軸に対して平行に、または
垂直軸に対して比較的小さい傾斜角で飛行するので、コ
イル104の上方に重なるように配置されたダークスペー
スシールドリング130は、スパッターされる材料の大部
分がコイル104上へ堆積することを防止する。上記対策
がなければコイル104上に堆積する材料の量を減らすこ
とによって、コイル104（およびその支持構造物）上に
堆積する材料による微粒子の発生が、実質的に低減され
る。また、これら構造物の寿命も延長される。As can be clearly seen from FIG.
Comprises a dark space shield link 130 that provides a ground plane for a target 110 that is negatively biased upward. Further, the shield ring 130 shields the outer edge of the target from plasma to reduce sputtering of the outer edge of the target. According to one aspect of the present invention, the dark space shield 130 couples the coil 104 (and the coil support isolation member 120 and the feedthrough isolation member 124) to the target 11
Since it is arranged so as to shield the material sputtered from zero, it exerts another function. As some of the material to be sputtered will fly at an oblique angle with respect to the vertical axis of the plasma chamber 100, the dark space shield ring 130 will cause the coil 104 and its associated support structure to move with respect to all of the sputtered material. It does not mean that it is completely shielded. However, since most of the sputtered material flies parallel to the chamber's vertical axis or at a relatively small angle of inclination relative to the vertical axis, the dark space located over the coil 104 The shield ring 130 prevents most of the sputtered material from depositing on the coil 104. Without the above measures, by reducing the amount of material deposited on the coil 104, the generation of particulates by the material deposited on the coil 104 (and its supporting structure) is substantially reduced. Also, the life of these structures is extended.

図示の実施例において、ダークスペースシールドリン
ク130は、ほぼ逆円錐台形でチタンまたはステンレス鋼
の閉じた連続リングである。もちろん、このダークスペ
ースシールドは、他の種々の導電性材料で作ることがで
き、ターゲットから堆積させられる材料の少なくとも一
部に対してコイル104とその支持構造物をシールドする
ような他の形状とすることができる。図示の実施例にお
いて、ダークスペースシールドは、プラズマチャンバ10
0の中央へ向かって内側へ、距離ｄが1/4インチだけコイ
ル104に重なるように延びている。もちろん、この重な
り量は、コイルの相対寸法と配置、およびその他の要因
によって変更することができる。例えば、コイル104
を、スパッターされる材料に対してより多くシールドす
るため、重なりを増すことはできるが、このことはま
た、ターゲットをプラズマに対してより多くシールドす
ることになり、用途によっては望ましくないことがあ
る。In the illustrated embodiment, the dark space shield link 130 is a substantially inverted frustoconical, closed continuous ring of titanium or stainless steel. Of course, the dark space shield can be made of a variety of other conductive materials and has other shapes that shield the coil 104 and its supporting structure against at least a portion of the material deposited from the target. can do. In the embodiment shown, the dark space shield is connected to the plasma chamber 10.
It extends inward toward the center of 0 so that the distance d overlaps the coil 104 by 1/4 inch. Of course, this amount of overlap can be varied depending on the relative dimensions and arrangement of the coils, and other factors. For example, coil 104
Can be increased to shield more against the material being sputtered, but this also results in more shielding of the target from the plasma, which may be undesirable in some applications .

チャンバシールド106は、ほぼお椀形（bowl−shape
d）であり、ほぼ円筒形の垂直壁140を備え、コイル104
を絶縁支持する隔離部材120、124がこの垂直壁140に取
付けられている。このシールドは更に、ワークピース11
2を支持するチャックまたはペデスタル114を取り囲む、
ほぼ環状のフロア壁142を備える。クランプリング154
が、ウェーハをチャック114へクランプし、シールド106
のフロア壁142とチャック114との間のギャップを覆って
いる。従って図２から明らかなように、チャンバシール
ド106は、クランプリング154とともに、プラズマチャン
バ100内においてワークピース112上へ堆積させられる堆
積材料に対して真空チャンバ102の内部を保護する。The chamber shield 106 is substantially bowl-shaped.
d) with a substantially cylindrical vertical wall 140 and a coil 104
Separating members 120 and 124 for insulatingly supporting are mounted on the vertical wall 140. This shield is also used for workpiece 11
Surrounding the chuck or pedestal 114 that supports 2;
A substantially annular floor wall 142 is provided. Clamp ring 154
Clamps the wafer to the chuck 114 and the shield 106
Covers the gap between the floor wall 142 and the chuck 114. Thus, as apparent from FIG. 2, the chamber shield 106, together with the clamp ring 154, protects the interior of the vacuum chamber 102 against deposition material that is deposited on the workpiece 112 in the plasma chamber 100.

真空チャンバ壁108は上部環状フランジ150を備える。
プラズマチャンバ100は、真空チャンバ壁フランジ150に
係合するアダプタリングアセンブリ152によって支持さ
れている。チャンバシールド106は、アダプタリングア
センブリ152の水平に延在するフランジ部材162へ、複数
の締め付けネジ（図示せず）によって締め付けられた水
平に延在するアウターフランジ部材160を備える。チャ
ンバシールド106は、アダプタリングアセンブリ152を介
して、システムのグラウンド（接地部）へ接地されてい
る。The vacuum chamber wall 108 has an upper annular flange 150.
Plasma chamber 100 is supported by an adapter ring assembly 152 that engages vacuum chamber wall flange 150. The chamber shield 106 includes a horizontally extending outer flange member 160 that is fastened to a horizontally extending flange member 162 of the adapter ring assembly 152 by a plurality of fastening screws (not shown). The chamber shield 106 is grounded via an adapter ring assembly 152 to the system ground.

ダークスペースシールド130はまた、アダプタリング
アセンブリ152の水平フランジ部材162へ締め付けられた
上部フランジ170を備える。ダークスペースシールド130
は、チャンバシールド106と同様に、アダプタリングア
センブリ152を介して接地されている。The dark space shield 130 also includes an upper flange 170 that is clamped to a horizontal flange member 162 of the adapter ring assembly 152. Dark Space Shield 130
Are grounded via an adapter ring assembly 152, similarly to the chamber shield 106.

ターゲット110はほぼ円盤形であって、同じくアダプ
タリングアセンブリ152によって支持されている。しか
し、ターゲット110は負のバイアスをかけられているの
で、接地されているアダプタリングアセンブリ152から
は絶縁されているべきである。従って、ターゲット110
の下側に形成された円形の溝の中に、セラミック絶縁リ
ングアセンブリ172が嵌められ、これは更にターゲット1
52の上側の対応する溝174に嵌められている。絶縁リン
グアセンブリ174は、セラミック等の種々の材料からな
ることができ、ターゲット110に十分に負のバイアスが
かけられるように、ターゲット110をアダプタリングア
センブリ152から離間させる。ターゲット、アダプタ、
およびセラミックリングアセンブリは、真空チャンバフ
ランジ150からターゲット110までの真空保持アセンブリ
を提供するため、Ｏリングシール面（図示せず）を備え
ている。The target 110 is substantially disc-shaped and is also supported by the adapter ring assembly 152. However, since the target 110 is negatively biased, it should be isolated from the adapter ring assembly 152 which is grounded. Therefore, target 110
A ceramic insulating ring assembly 172 is fitted into the circular groove formed on the lower side of the
It is fitted in the corresponding groove 174 on the upper side of 52. The insulating ring assembly 174 can be made of various materials, such as ceramic, and separates the target 110 from the adapter ring assembly 152 so that the target 110 is sufficiently negatively biased. Target, adapter,
And the ceramic ring assembly is provided with an O-ring sealing surface (not shown) to provide a vacuum holding assembly from the vacuum chamber flange 150 to the target 110.

図３は、本発明の他の実施例による埋込み形コイルを
示し、ここではワークピースの汚染を防止するための別
の構造によって、コイルによる微粒子物質の発生が低減
される。図３の実施例では、アダプタリングアセンブリ
200は、埋込み形コイルチャンバ202の第３の側でヘリカ
ルコイル206を収容し、開放された第四の側でコイル206
をプラズマへ露出する、埋込み形コイルチャンバ202を
形成するように変形されている。図示の実施例では、埋
込み形コイルチャンバ202は、ほぼ環状であって、図１
と図２の実施例の隔離部材120および124に類似の絶縁隔
離部材（図示せず）上にコイル206を担持する、ほぼ円
筒形の垂直壁210によって画成される。埋込み形コイル
チャンバ202はまた、図１と図２の実施例のダークスペ
ースシールド130と類似の機能を果たす上部天井壁214を
備える。更に具体的には、このコイルチャンバ天井壁21
4は、負にバイアスをかけられたターゲット110に対する
接地面を提供するとともに、ターゲット110の周縁をプ
ラズマからシールドする。更にまた、このコイルチャン
バ天井壁214は、ターゲット110から放出される堆積材料
から、ある程度コイル206をシールドする。アダプタリ
ングアセンブリ200は、アダプタリングアセンブリ200の
チャンバシール壁214の上面とターゲット110の間の絶縁
リングアセンブリ216によって、ターゲット110から絶縁
状態で間隔を空けられている。FIG. 3 shows an implantable coil according to another embodiment of the present invention, wherein another structure for preventing contamination of the workpiece reduces the generation of particulate matter by the coil. In the embodiment of FIG.
200 contains a helical coil 206 on a third side of the recessed coil chamber 202 and a coil 206 on an open fourth side.
Have been modified to form a recessed coil chamber 202, which exposes the plasma to the plasma. In the illustrated embodiment, the recessed coil chamber 202 is substantially annular and
2 is defined by a generally cylindrical vertical wall 210 carrying the coil 206 on an insulating isolation member (not shown) similar to the isolation members 120 and 124 of the embodiment of FIG. The recessed coil chamber 202 also includes an upper ceiling wall 214 that performs a function similar to the dark space shield 130 of the embodiment of FIGS. More specifically, the coil chamber ceiling wall 21
4 provides a ground plane for the negatively biased target 110 and shields the periphery of the target 110 from the plasma. Furthermore, the coil chamber ceiling wall 214 shields the coil 206 to some extent from the deposited material released from the target 110. Adapter ring assembly 200 is insulated from target 110 by an insulating ring assembly 216 between the upper surface of chamber seal wall 214 of adapter ring assembly 200 and target 110.

図３の実施例のもう一つの態様によれば、アダプタリ
ングアセンブリ200のコイルチャンバ202は、コイル206
の下方に位置するフロア壁220を更に備える。コイルチ
ャンバ202内のコイル206は、ターゲット110に対して引
っ込んでいるので、コイル206（およびその支持構造
物）上へ堆積するターゲット材料の量は、低減されると
考えられる。しかし、ターゲット材料がコイル206上へ
堆積する程度まで、コイルチャンバのフロア壁220はコ
イル206によって放射される微粒子物質の大部分を捕捉
する位置にあり、その結果、微粒子物質は、ウェーハま
たはワークピース上でなく、コイルチャンバのフロア壁
220に堆積する。その結果、ワークピースの汚染は更に
低減されると考えられる。According to another aspect of the embodiment of FIG. 3, the coil chamber 202 of the adapter ring assembly 200 includes a coil 206
The floor further includes a floor wall 220 located below. Since the coil 206 within the coil chamber 202 is retracted relative to the target 110, the amount of target material deposited on the coil 206 (and its support structure) is believed to be reduced. However, to the extent that the target material deposits on the coil 206, the floor wall 220 of the coil chamber is in a position to capture most of the particulate matter emitted by the coil 206, so that the particulate matter is Not on the floor of the coil chamber floor
Deposit on 220. As a result, contamination of the workpiece is believed to be further reduced.

図３にプラズマチャンバ190は、図１と図２の実施例
のシールド106に類似のお椀形シールド230を備える。し
かし、本発明のもう一つの態様によれば、このシールド
230は、アダプタリングアセンブリ200の下部フランジ23
2へ、ネジその他の適当な固定具によって、取外し可能
に取付けられている。このような構成により、シールド
230は、アダプタリングアセンブリ200から取外して別途
洗浄し、アダプタリングアセンブリ200へ再取付けする
ことができる。シールド230の有用寿命が終われば、廃
棄して、新しいシールド230をアダプタリングアセンブ
リ200へ取付けることができる。In FIG. 3, the plasma chamber 190 includes a bowl-shaped shield 230 similar to the shield 106 of the embodiment of FIGS. However, according to another aspect of the invention, this shield
230 is the lower flange 23 of the adapter ring assembly 200
2, it is removably mounted by screws or other suitable fasteners. With such a configuration, the shield
230 can be removed from adapter ring assembly 200, washed separately, and reattached to adapter ring assembly 200. At the end of the useful life of the shield 230, it can be discarded and a new shield 230 can be attached to the adapter ring assembly 200.

図３の実施例において、コイルがシールド230によっ
て支持されておらず、シールド面がコイルを支持するた
めの隔離部材によって妨げられないので、シールド230
の表面をより容易に洗浄することができる。従って、シ
ールド230の使用寿命の延長が可能である。更に、この
シールドはより速く洗浄することができ、プロセスチャ
ンバが使用されない休止時間を短縮することができる。
更にまた、シールド230は、コイルも、コイルに取付け
られた隔離部材も備えていないので、より経済的に製造
でき、従って有用寿命が終われば、より経済的に廃棄で
きる。In the embodiment of FIG. 3, since the coil is not supported by the shield 230 and the shield surface is not obstructed by the isolation member for supporting the coil, the shield 230
Can be more easily cleaned. Therefore, the service life of the shield 230 can be extended. In addition, the shield can be cleaned faster, reducing downtime when the process chamber is not in use.
Furthermore, the shield 230 does not include the coil or the isolation member attached to the coil, so that it can be more economically manufactured and therefore more economically disposed at the end of its useful life.

他方、アダプタリングアセンブリ200のコイルチャン
バ202は、ターゲット堆積材料からコイルを保護するこ
とによって、堆積した材料をコイルから除去するのに必
要な洗浄の量を減らすことができる。このことはまた、
休止時間の短縮と、コイル寿命の延長に寄与する。更
に、アダプタリングのコイルチャンバ202は、シールド2
30から容易に分離できるので、シールド230が交換を必
要とするとき、コイル206とコイルチャンバ202を交換し
なくてもよい。シールドはコイルより頻繁に交換を必要
とする傾向があるので、コイル206の交換頻度をシール
ド230のそれより少なくすることによって、運転コスト
を下げることができる。On the other hand, the coil chamber 202 of the adapter ring assembly 200 can reduce the amount of cleaning required to remove deposited material from the coil by protecting the coil from target deposition material. This also means
This contributes to shortening the downtime and extending the life of the coil. Furthermore, the coil chamber 202 of the adapter ring is
The coil 206 and the coil chamber 202 do not need to be replaced when the shield 230 needs to be replaced because it can be easily separated from 30. Since shields tend to require replacement more frequently than coils, operating costs can be reduced by replacing coil 206 less frequently than shield 230.

次に図４は、本発明のもう一つの態様によるコイル隔
離部材120の内部構造をより詳細に示す。コイル隔離部
材120は、ほぼ円盤状のベース部材250を備え、これはセ
ラミック等の絶縁材料で作られていることが望ましい。
堆積材料と同じ材料で作られていることが望ましい、ほ
ぼ円筒形のカバー部材252が、ベース部材250をカバー
し、シールドする。従って、堆積材料がチタンであれ
ば、カバー部材252もチタンで作られていることが望ま
しい。堆積材料（ここでは例えばチタン）の付着を容易
にするため、堆積材料からの微粒子の放射を低減するビ
ードブラストによって、金属の表面を処理することが望
ましい。Next, FIG. 4 shows the internal structure of the coil isolation member 120 according to another embodiment of the present invention in more detail. The coil isolation member 120 includes a substantially disk-shaped base member 250, which is preferably made of an insulating material such as ceramic.
A generally cylindrical cover member 252, preferably made of the same material as the deposition material, covers and shields base member 250. Therefore, if the deposition material is titanium, it is desirable that the cover member 252 is also made of titanium. To facilitate deposition of the deposition material (here, for example, titanium), it is desirable to treat the metal surface with a bead blast that reduces the emission of particulates from the deposition material.

カバー部材の前面には、ほぼフック状のビードブラス
ト処理されたチタン製のブラケット254が取付けられ、
コイル104の巻き線が配置され支持される。ベース部材2
50は、ボルト251または他の適当な固定具によってシー
ルド106の壁140へ取付けられている。（ベース部材250
は、図３の実施例のコイルチャンバ202の壁210へ、類似
の方法で取付けられる。）以下に述べるように、ベース部材250とカバー部材252
の両方は、コイルをシールド（または図３の実施例のア
ダプタリング）へショートさせる恐れのある、隔離部材
を横切る導通経路の形成を抑制する迷路構造を画成す
る。ベース部材250は、ベース部材250の上面262をカバ
ー部材252の内面264から遠ざけてギャップG0を画成する
のに十分な高さの直立内部円形壁260を備える。更に、
ベース部材250の外径D1は、ベース部材250の外周面270
とカバー部材252の内周面272の間にギャップG1を画成す
るため、カバー部材252の内径より小さい。更にまた、
カバー部材252の厚さは、カバー部材252の背面280がシ
ールド106の壁140から離れて、もう一つのギャップG2を
画成するよう十分に小さい。ギャップG2、G1、G0は、カ
バー部材250とシールドの壁140との間、およびカバー部
材250と絶縁ベース部材250との間に、矢印290で示した
複数の経路を形成することが分かる。矢印290は、隔離
部材120の内部を堆積材料が被覆するためにたどらねば
ならない複数回屈曲した経路を表す。コイル104をシー
ルド壁140へショートさせるためには、カバー部材252か
ら絶縁ベース部材250まで、堆積材料によって完全導電
経路が形成される程度に、隔離部材120の内面を堆積材
料によって被覆する必要がある。そのような完全導電経
路を形成するためには、導電材料は、導電性堆積材料が
絶縁ベース部材250の一番奥の壁260にまで達しない限
り、隔離部材120の内部の入口のギャップG2または内部
通路290のギャップG1またはG0をブリッジしなければな
らない。導電性堆積材料がカバー部材252の内面264、27
2と、絶縁部材の面262、270と、ベース部材250の内壁26
0を被覆すれば、コイル106からシールド壁140まで、完
全導電経路が形成される。On the front surface of the cover member, a bracket 254 made of titanium that has been subjected to bead blasting in a substantially hook shape is attached,
The windings of the coil 104 are arranged and supported. Base member 2
50 is attached to wall 140 of shield 106 by bolts 251 or other suitable fasteners. (Base member 250
Is mounted in a similar manner to the wall 210 of the coil chamber 202 of the embodiment of FIG. As described below, the base member 250 and the cover member 252
Both define a maze structure that suppresses the formation of a conductive path across the isolation member that could short the coil to the shield (or the adapter ring in the embodiment of FIG. 3). The base member 250 includes an upstanding internal circular wall 260 high enough to separate the upper surface 262 of the base member 250 from the inner surface 264 of the cover member 252 to define the gap G0. Furthermore,
The outer diameter D1 of the base member 250 is equal to the outer peripheral surface 270 of the base member 250.
In order to define a gap G1 between the cover member 252 and the inner peripheral surface 272, the gap G1 is smaller than the inner diameter of the cover member 252. Furthermore,
The thickness of the cover member 252 is small enough so that the back surface 280 of the cover member 252 separates from the wall 140 of the shield 106 and defines another gap G2. It can be seen that the gaps G2, G1, G0 form a plurality of paths, indicated by arrows 290, between the cover member 250 and the shield wall 140 and between the cover member 250 and the insulating base member 250. Arrow 290 represents a multiple-turn path that must be followed in order for the deposited material to coat the interior of isolation member 120. In order to short-circuit the coil 104 to the shield wall 140, it is necessary to cover the inner surface of the isolation member 120 with the deposited material from the cover member 252 to the insulating base member 250 to the extent that the deposited material forms a complete conductive path. . In order to form such a complete conductive path, the conductive material is filled with the gap G2 or G2 at the entrance inside the isolation member 120, unless the conductive deposition material reaches the innermost wall 260 of the insulating base member 250. The gap G1 or G0 of the internal passage 290 must be bridged. The conductive deposition material is applied to the inner surfaces 264, 27 of the cover member 252.
2, the surfaces 262 and 270 of the insulating member, and the inner wall 26 of the base member 250
If 0 is covered, a complete conductive path is formed from the coil 106 to the shield wall 140.

そのような完全導電経路の形成を更に遅らせるため、
ベース部材250の前面262は複数の同心状の溝300a、300
b、300cを備え、これらの溝は、ターゲットからの堆積
材料が内壁240に到達してショートを発生しないよう
に、堆積材料が堆積するように位置決めされている。こ
れら同心状の溝の幅はそれぞれ異なり、ギャップG0に多
くの材料が堆積してギャップG0をブリッジすることを防
止するように、外側の溝幅を大きくすることが望まし
い。この迷路構造によって、コイルとシールドの間にシ
ョートを発生することなく、導電性材料の比較的多数回
の堆積のために、プラズマチャンバを使用できることが
判明した。なお、隔離部材120全体の厚さは比較的薄
い。その結果、隔離部材の厚さを減少させて、プラズマ
チャンバ全体の直径を小さくすることができる。To further delay the formation of such a perfect conductive path,
The front surface 262 of the base member 250 has a plurality of concentric grooves 300a, 300
b, 300c, and these grooves are positioned to deposit deposition material such that deposition material from the target does not reach the inner wall 240 and cause a short circuit. These concentric grooves have different widths, and it is desirable to increase the width of the outer grooves so as to prevent a large amount of material from being deposited in the gap G0 and bridging the gap G0. It has been found that this maze structure allows the plasma chamber to be used for a relatively large number of depositions of conductive material without causing a short between the coil and the shield. Note that the entire thickness of the isolation member 120 is relatively thin. As a result, the thickness of the isolation member can be reduced, and the diameter of the entire plasma chamber can be reduced.

図示の実施例において、絶縁ベース部材250の直径D1
は1.50インチ、ベース部材250の外周270とカバー部材25
2の内周272の間のギャップG1は0.10インチである。絶縁
ベース部材252の外径D1と、ベース部材250の外周面270
とカバー部材252の内周面272との間のギャップG1との比
は、14以上であることが望ましいことが判明した。図４
の実施例の直径対ギャップ比は15である。In the illustrated embodiment, the diameter D1 of the insulating base member 250 is
Is 1.50 inches, outer circumference 270 of base member 250 and cover member 25
The gap G1 between the two inner perimeters 272 is 0.10 inches. The outer diameter D1 of the insulating base member 252 and the outer peripheral surface 270 of the base member 250
It has been found that the ratio between the gap G1 and the inner peripheral surface 272 of the cover member 252 is desirably 14 or more. FIG.
The diameter-to-gap ratio of this example is 15.

隔離部材を介するショートの防止にとって重要である
ことが判明したもう一つの比は、カバー部材252の背面2
80と絶縁ベース部材250の前面262との間の距離L1対ギャ
ップG1である通路幅の比である。図示の実施例におい
て、通路L1の長さは0.19インチ、ギャップG1は0.10イン
チであるので、これらによるアスペクト比は1.9すなわ
ち約２である。隔離部材を介するショートの防止には、
実質的に２未満のアスペクト比は効果的でないことが判
明した。Another ratio that has been found to be important for the prevention of shorts through the isolation member is that the rear surface of the cover member 252
This is the ratio of the distance L1 between 80 and the front surface 262 of the insulating base member 250 to the passage width that is the gap G1. In the embodiment shown, the length of the passage L1 is 0.19 inches and the gap G1 is 0.10 inches, so that the aspect ratio is 1.9 or about 2. To prevent short-circuiting through the isolation member,
Aspect ratios substantially less than 2 have been found to be ineffective.

内壁260方向への堆積材料の飛行を遅らせるためにギ
ャップG0の幅を小さくすることも望まれる。他方、ギャ
ップの両側を互いにショートさせる恐れのあるギャップ
G0を横切る堆積材料のブリッジの形成を容易にする程度
にまで、ギャップG0を狭くするべきではない。図示の実
施例においては、0.05インチのギャップG0が、上記のよ
うに好適であることが判明した。更に図示の実施例にお
いては、絶縁ベース部材250の外周270から内壁260まで
の飛行距離L2は、0.50インチである。従って通路のこの
部分のアスペクト比は、0.5/0.05すなわち10である。ア
スペクト比が低い程、ショートが発生し易く、望ましく
ないと考えられる。It is also desirable to reduce the width of the gap G0 in order to delay the flight of the deposited material toward the inner wall 260. On the other hand, gaps that may short both sides of the gap
The gap G0 should not be narrow enough to facilitate the formation of a bridge of deposited material across G0. In the illustrated embodiment, a gap G0 of 0.05 inches has been found to be suitable as described above. Further, in the illustrated embodiment, the flight distance L2 from the outer periphery 270 of the insulating base member 250 to the inner wall 260 is 0.50 inches. Thus, the aspect ratio of this portion of the passage is 0.5 / 0.05 or 10. It is considered that the lower the aspect ratio, the more the short circuit is likely to occur, which is not desirable.

先に述べたように、ベース部材250は、堆積材料を堆
積させ、それを内壁260に到達させないように、複数の
同心状の溝300a、300b、300cを備えている。図示の実施
例においては、溝300a、300b、300cの幅はそれぞれ0.1
0、0.05および0.05である。これら溝の数と幅を増加さ
せればショートの可能性は更に減るが、隔離部材全体の
幅が大きくなり、用途によっては適当でないことがあ
る。更に、製作を容易にするため、溝の数を１個にまで
減らすことができるが、そのような単純化設計は、ショ
ートの可能性を高める。ここでも、ギャップG0、G1およ
びG2は、上記のようにショートの可能性を減らすように
選ぶべきである。As described above, the base member 250 includes a plurality of concentric grooves 300a, 300b, and 300c so that the deposition material is deposited and does not reach the inner wall 260. In the embodiment shown, the width of each of the grooves 300a, 300b, 300c is 0.1
0, 0.05 and 0.05. Increasing the number and width of these grooves further reduces the possibility of shorts, but increases the overall width of the isolation member and may not be suitable for some applications. Further, the number of grooves can be reduced to one for ease of fabrication, but such a simplified design increases the possibility of shorts. Again, the gaps G0, G1 and G2 should be chosen to reduce the possibility of shorts as described above.

図５は、コイルフィードスルー隔離部材124を、更に
詳細に示す。コイルフィードスルー隔離部材124は、コ
イル隔離部材120と同様に、ほぼ円盤状の絶縁ベース部
材350と、絶縁ベース部材350を覆いビードブラスト処理
されたチタン製のほぼ円筒形のカバー部材352を備え
る。しかし、このフィードスルー隔離部材124は、RFパ
ワーをコイル104へ印加するネジ付き導体フィードスル
ーボルト356が貫通する中央開口部を備えている。フィ
ードスルーボルト356は、チタン製スリーブ358内へ挿入
され、このスリーブ358は、ビードブラスト処理された
チタン製の端部スリーブ359を備え、このスリーブ359内
へコイル104が配置されている。RF電流はスリーブ358と
359の表面に沿ってコイル104へ伝播する。このフィード
スルー隔離部材124は、壁140内側の絶縁ベース部材と、
壁140外側のフィードスルーボルト356に螺合するナット
366とによってシールドの壁140の内側へ固定される。ナ
ット366は、コネクター368と絶縁スペーサ374によって
壁140から隔てられている。この電気コネクター368は、
マッチングネットワーク（図示せず）を介してRF発生装
置（同じく図示せず）へフィードスルーを接続する。FIG. 5 shows the coil feedthrough isolation member 124 in more detail. Similarly to the coil isolation member 120, the coil feed-through isolation member 124 includes a substantially disc-shaped insulating base member 350, and a substantially cylindrical cover member 352 made of titanium and covered with the bead blasting to cover the insulating base member 350. However, the feedthrough isolation member 124 has a central opening through which a threaded conductor feedthrough bolt 356 that applies RF power to the coil 104 passes. The feedthrough bolt 356 is inserted into a titanium sleeve 358, which has a bead-blasted titanium end sleeve 359 in which the coil 104 is located. RF current is
It propagates along the surface of 359 to the coil 104. The feedthrough isolation member 124 includes an insulating base member inside the wall 140,
Nut screwed into feedthrough bolt 356 outside wall 140
With 366, it is fixed inside the shield wall 140. Nut 366 is separated from wall 140 by connector 368 and insulating spacer 374. This electrical connector 368
Connect the feedthrough to a RF generator (also not shown) via a matching network (not shown).

フィードスルー隔離部材124も、コイル104とシールド
の壁140との間のショートの形成防止のため、コイル隔
離部材120の内部迷路構造とある程度同様な、内部迷路
構造を備えている。ここで、絶縁ベース部材350の直径D
2は0.84インチ、ベース部材350の外周370とカバー部材3
52の内周372との間のギャップG3は0.06インチである。
従って、直径D2対ギャップG3の比は、図４のコイル隔離
部材120の直径対ギャップ比の15と同様に、14である。
しかし、図５のフィードスルー隔離部材124のアスペク
ト比は、図４のコイル隔離部材120のアスペクト比より
大きい。ここで、絶縁ベース部材350の外周370とカバー
部材352の内周372との間の通路の長さL3は、0.27インチ
である。従って、長さL3対ギャップG3のアスペクト比は
4.5である。従って、図５の実施例のより大きなアスペ
クト比は、望ましくないショートの防止に、より有効で
ある。The feed-through isolation member 124 also has an internal maze structure somewhat similar to the internal maze structure of the coil isolation member 120 to prevent the formation of a short circuit between the coil 104 and the shield wall 140. Here, the diameter D of the insulating base member 350
2 is 0.84 inch, outer circumference 370 of base member 350 and cover member 3
The gap G3 between 52 and the inner circumference 372 is 0.06 inches.
Thus, the ratio of the diameter D2 to the gap G3 is 14, as is the diameter to gap ratio 15 of the coil isolation member 120 of FIG.
However, the aspect ratio of the feedthrough isolation member 124 of FIG. 5 is greater than the aspect ratio of the coil isolation member 120 of FIG. Here, the length L3 of the passage between the outer periphery 370 of the insulating base member 350 and the inner periphery 372 of the cover member 352 is 0.27 inches. Therefore, the aspect ratio of length L3 to gap G3 is
4.5. Thus, the larger aspect ratio of the embodiment of FIG. 5 is more effective in preventing unwanted shorts.

図示の実施例において、ベース部材350の前面362とカ
バー部材352の背面364との間のギャップG4は0.04インチ
が好適であることが判明した。更に図示の実施例におい
て、絶縁ベース部材350の周辺370から内壁360までの飛
行距離L4は0.24インチである。従って通路390のこの部
分のアスペクト比は0.24/0.04、すなわち６である。ア
スペクト比が低い程、ショートが発生し易く、望ましく
ないと考えられる。In the illustrated embodiment, it has been found that a gap G4 between the front surface 362 of the base member 350 and the back surface 364 of the cover member 352 is preferably 0.04 inches. Further, in the illustrated embodiment, the flight distance L4 from the periphery 370 of the insulating base member 350 to the inner wall 360 is 0.24 inches. Thus, the aspect ratio of this portion of the passage 390 is 0.24 / 0.04, or six. It is considered that the lower the aspect ratio, the more the short circuit is likely to occur, which is not desirable.

ベース部材350は、ベース部材250と同様に、堆積材料
を堆積させ、それを内壁360に到達させないように、複
数の同心状の溝400a、400bを備えている。図示の実施例
において、溝400a、400の幅はそれぞれ0.06インチ、0.0
4インチである。カバー部材350の背面380とシールドと
の間のギャップG5は、0.12インチである。Like the base member 250, the base member 350 includes a plurality of concentric grooves 400a and 400b so as to deposit a deposition material and prevent the deposition material from reaching the inner wall 360. In the illustrated embodiment, the width of the grooves 400a, 400 is 0.06 inches, 0.0
4 inches. The gap G5 between the back surface 380 of the cover member 350 and the shield is 0.12 inches.

特定の用途次第で、迷路の溝の他の寸法、形状、数が
可能であることを認識するべきである。迷路の設計に影
響を及ぼす要因には、上記の他に、被堆積材料のタイ
プ、および隔離部材を洗浄または交換するまでに行おう
とする堆積の回数がある。It should be appreciated that other dimensions, shapes and numbers of maze grooves are possible, depending on the particular application. Other factors that affect the design of the maze include the type of material to be deposited and the number of depositions that are attempted before cleaning or replacing the isolation member.

上記の各実施例では、プラズマチャンバ内に単一のヘ
リカルコイルを用いた。本発明は、２個以上のコイルを
備えたプラズマチャンバにも適用可能であることを認識
するべきである。例えば、本発明は、先に引用した同時
係属中の出願番号第08/559,345号に記載されたタイプの
ヘリコンウェーブ発射用多コイルチャンバにも適用可能
である。In each of the above embodiments, a single helical coil was used in the plasma chamber. It should be appreciated that the present invention is also applicable to plasma chambers with more than one coil. For example, the invention is applicable to a multi-coil chamber for helicon wave launching of the type described in co-pending application Ser. No. 08 / 559,345, cited above.

図示の実施例のコイル104は、1/2インチx1/8インチの
ヘビーデューティのビードブラスト処理済みのチタンリ
ボンまたは銅リボンを３回巻きヘリカルコイルに形成し
たものである。しかし、他の高導電性材料や形状を用い
ることもできる。例えば、コイルの厚さを1/16インチに
減らし、幅を２インチに増すことができる。また、中空
の銅の管材料を、特に水冷が必要な場合、用いることが
できる。適当なRF発生装置とマッチング回路は、当該技
術に精通する者には周知のコンポーネントである。例え
ば、マッチング回路とアンテナへの最適周波数適合を
「周波数空き選択（frequency hunt）」能力を持ったEN
I GenesisシリーズのようなRF発生装置が適している。
コイルへのPFパワーを発生する発生装置の周波数は、2M
Hzが望ましいが、他の交流周波数（a.c.frequency）、
例えば1MHzから100MHz、および非RF周波数に変更するこ
とも予期される。The coil 104 of the illustrated embodiment is a three-turn helical coil formed of a 1/2 inch x 1/8 inch heavy duty bead blasted titanium or copper ribbon. However, other highly conductive materials and shapes can be used. For example, the thickness of the coil can be reduced to 1/16 inch and the width can be increased to 2 inches. Also, hollow copper tubing can be used, especially when water cooling is required. Suitable RF generators and matching circuits are components well known to those skilled in the art. For example, an EN with the ability to "frequency hunt" the optimal frequency adaptation to matching circuits and antennas
RF generators such as the I Genesis series are suitable.
The frequency of the generator that generates the PF power to the coil is 2M
Hz is preferred, but other acfrequency,
For example, it is expected to change from 1 MHz to 100 MHz and non-RF frequencies.

図示の実施例においては、シールド106の内径は16イ
ンチであるが、６インチから25インチまでの範囲で好結
果が得られることが予期される。シールドは、セラミッ
クや石英を含む種々の材料で製作することができる。し
かし、ターゲット材料によって被覆される可能性の高い
シールドやすべての金属面は、スパッタリングされるタ
ーゲット材料と同じ材料で製作されない限り、ステンレ
ス鋼または銅で製作するべきである。被覆される構造物
の材料の熱膨張率は、スパッタリングされる材料がシー
ルドまたは他の構造物からウェーハ上へ剥離落下するの
を減らすため、スパッタリングされる材料の熱膨張率に
できるだけ近いことが望ましい。更に、被覆される材料
は、スパッタリングされる材料に対して良好な付着性を
呈するべきである。従って例えば、堆積させられる材料
がチタンであれば、シールド、コイル、ブラケット、お
よび被覆される可能性の高い他の構造物の材料は、ビー
ドブラストされたチタンであることが望ましい。もちろ
ん、堆積させられる材料がチタン以外の材料であれば、
望ましい金属は、堆積させられる材料、ステンレス鋼、
または銅である。ターゲットをスパッタリングする前
に、構造物をモリブデンによって被覆することによって
付着性が改善される。In the illustrated embodiment, the inner diameter of the shield 106 is 16 inches, but it is expected that successful results will be obtained in the range of 6 inches to 25 inches. The shield can be made of various materials including ceramic and quartz. However, shields and all metal surfaces likely to be covered by the target material should be made of stainless steel or copper, unless made of the same material as the target material being sputtered. The coefficient of thermal expansion of the material of the structure to be coated should be as close as possible to the coefficient of thermal expansion of the material to be sputtered to reduce the sputtered material from falling off the shield or other structure onto the wafer. . Further, the material to be coated should exhibit good adhesion to the material being sputtered. Thus, for example, if the deposited material is titanium, the material of the shields, coils, brackets, and other structures that are likely to be coated is preferably bead blasted titanium. Of course, if the deposited material is a material other than titanium,
Desirable metals are the material to be deposited, stainless steel,
Or copper. The adhesion is improved by coating the structure with molybdenum before sputtering the target.

ウェーハからターゲットまでの空間は140mmが望まし
いが、1.5インチから８インチまでの範囲が可能であ
る。プラズマを発生させるため、Ar,H₂、O₂または反応
性ガス、例えばNF₃、CF₄、その他多くの前駆体ガスを用
いることができる。様々な前駆体ガスの圧力には、0.1m
Torrから50mtorrまでが適している。イオン化PVD用に
は、スパッタリングされる材料のイオン化を最良にする
ため、10mTorrから100mTorrまでの圧力が望ましい。The space from the wafer to the target is preferably 140 mm, but can range from 1.5 inches to 8 inches. Ar, H ₂ , O ₂ or reactive gases such as NF ₃ , CF ₄ and many other precursor gases can be used to generate the plasma. 0.1m for various precursor gas pressures
Suitable from Torr to 50mtorr. For ionized PVD, a pressure of 10 mTorr to 100 mTorr is desirable to optimize ionization of the sputtered material.

図６は、図示の実施例のプラズマ発生装置の電気接続
の略図である。プラズマによって発生させられたイオン
を引きつけるため、可変DC電力源400によりDC電力3kWで
ターゲット110に負のバイアスをかけることが望まし
い。同じ方法で、−30ボルトDCで負のバイアスをかけら
れた電力源401によって基板112に負のバイアスをかけ
て、イオン化された堆積材料を基板へ吸引することがで
きる。コイル104の一端は、アンプの出力端のようなRF
電力源とマッチングネットワーク402に接続され、その
入力端は、約4.5kWでRFパワーを供給するRF発生装置404
に接続される。コイル104の他端は、コンデンサー406を
介して接地されることが望ましく、このコンデンサーは
可変コンデンサーとすることができる。FIG. 6 is a schematic diagram of the electrical connections of the plasma generator of the illustrated embodiment. Preferably, the target 110 is negatively biased at 3 kW DC power by the variable DC power source 400 to attract ions generated by the plasma. In the same manner, the substrate 112 may be negatively biased by a negatively biased power source 401 at −30 volts DC to attract ionized deposition material to the substrate. One end of the coil 104 is connected to the RF output
An RF generator 404 that is connected to a power source and a matching network 402 and that supplies RF power at about 4.5 kW
Connected to. The other end of the coil 104 is desirably grounded via a capacitor 406, which can be a variable capacitor.

出願番号第08/680,335号、発明の名称「プラズマ発生
用スパッタリングコイル」出願日1996年７月10日で、本
出願の譲受人へ譲渡され、引用によってすべてをこの出
願の一部とする同時係属出願に記載されているように、
コイル104は、ターゲットもスパッタリングすることが
できる位置に配置してもよい。その結果、堆積させられ
た材料はターゲットとコイルの両方によって寄与される
ことができる。そのような構成は、堆積層の均一性を改
善することが判明した。更に、コイルの巻き数を１にま
で減らし、複雑さとコストを減らし、洗浄を容易にする
ことができる。Application No. 08 / 680,335, entitled "Sputtering Coil for Plasma Generation", filed July 10, 1996, assigned to the assignee of the present application, and incorporated by reference in its entirety. As stated in the application,
The coil 104 may be arranged at a position where the target can also be sputtered. As a result, the deposited material can be contributed by both the target and the coil. Such an arrangement has been found to improve the uniformity of the deposited layer. Furthermore, the number of turns of the coil can be reduced to one, reducing complexity and cost and facilitating cleaning.

図７は、他の実施例によるサポート隔離部材500の断
面図である。図７の実施例において、隔離部材500は、
円筒形絶縁ベース部材502と、シールドの壁140に対して
実質的に横断方向に配向される迷路通路510を形成する
ように、ベース部材502の側面508から離れた円筒形側壁
506を有するカップ状金属カバー部材504を備えている。
隔離部材500のベース部材502は、図４の隔離部材のベー
ス部材250が備えているような同心状チャネル300は備え
ていない。多くの用途において、コイル104をシールド1
06へショートさせる恐れのある、隔離部材を横切る堆積
材料の経路の形成の防止には、図７の隔離部材500の通
路510が十分であると考えられる。このような単純化に
よって、ベース部材502は、特にセラミックのような機
械加工性の悪い材料を用いて製作する場合、ベース部材
250より容易かつ低コストで製作可能である。FIG. 7 is a cross-sectional view of a support isolation member 500 according to another embodiment. In the embodiment of FIG.
A cylindrical insulating base member 502 and a cylindrical sidewall spaced from a side surface 508 of the base member 502 to form a maze passage 510 oriented substantially transversely to the shield wall 140.
A cup-shaped metal cover member 504 having 506 is provided.
The base member 502 of the isolation member 500 does not include the concentric channel 300 as does the isolation member base member 250 of FIG. In many applications, shield coil 104
It is believed that the passage 510 of the isolation member 500 of FIG. 7 is sufficient to prevent the formation of a path for the deposited material across the isolation member, which could cause a short to 06. Due to such simplification, the base member 502 can be made of a base material, especially when manufactured using a material having poor machinability such as ceramic.
It can be manufactured easily and at lower cost than 250.

本発明のもう一つの態様によれば、図７の隔離部材50
0は、ショートした導電経路形成の可能性を更に低減す
るため、通路510にほぼ平行な第２のラビリンス通路516
を形成するように、第１のカバー部材504の側部506から
間隔をあけた円筒形の側壁514を備えた、第２のカップ
状金属製カバー部材512を備える。しかし、第２のカバ
ー部材512は、別の機能を果たす。第２のカバー部材512
は、ベース部材502のショルダ520とシールド壁140との
間に位置する背面壁518を備えている。ベース部材のシ
ョルダ520は、第２のカバー部材512が、電気的接地状態
に維持されているシールド壁140に対して確実に係合さ
れ、良好な電気的接触を保つようにする。従って、第２
のカバー部材512は、第１のカバー部材504から間隔をあ
けて、同様に接地状態に維持される。他方、第１のカバ
ー部材504はコイル104に密着している。従って、カバー
部材504はコイルと同一電位にあるので、スパッタリン
グすることができる。第２のカバー部材512は接地電位
にあり、第１のカバー部材504の露出面の大部分を覆っ
ているので、第２のカバー部材ば、隔離部材のスパッタ
リングが望ましくない用途において、第１のカバー部材
504のスパッタを実質的に低減すると考えられる。基板
上の堆積の均一性を高めるため、コイル104がスパッタ
リングされる用途においてさえ、隔離部材は普通、基板
の周囲に連続リングとして配列されていないので、隔離
部材のスパッタリングは不均一性をもたらす可能性があ
る。従って多くの用途において、隔離部材のスパッタリ
ングを遅延させることが有用となる可能性がある。According to another embodiment of the present invention, the isolation member 50 of FIG.
0 is a second labyrinth passage 516 substantially parallel to passage 510 to further reduce the possibility of forming a shorted conductive path.
A second cup-shaped metal cover member 512 with a cylindrical side wall 514 spaced from a side 506 of the first cover member 504 to form However, the second cover member 512 performs another function. Second cover member 512
Has a rear wall 518 located between the shoulder 520 of the base member 502 and the shield wall 140. The base member shoulder 520 ensures that the second cover member 512 is engaged with the shield wall 140, which is maintained in electrical ground, and maintains good electrical contact. Therefore, the second
Of the first cover member 504 is similarly maintained at the grounded state with a gap from the first cover member 504. On the other hand, the first cover member 504 is in close contact with the coil 104. Accordingly, since the cover member 504 is at the same potential as the coil, sputtering can be performed. Since the second cover member 512 is at ground potential and covers most of the exposed surface of the first cover member 504, the second cover member may be used in applications where sputtering of the isolation member is undesirable. Cover material
It is believed that the sputter of 504 is substantially reduced. Even in applications where the coil 104 is sputtered to increase the uniformity of deposition on the substrate, sputtering of the isolator may result in non-uniformity because the isolator is typically not arranged as a continuous ring around the substrate There is. Thus, in many applications, it may be useful to delay sputtering of the isolation member.

第１の絶縁ベース部材502は、シールド壁140の開口部
を貫通して延びるカラー528を備える。隔離部材500は更
に、第１の絶縁ベース部材502に対してシールド壁140の
反対側に位置する第２の絶縁ベース部材530を備える。
メタルスリーブ531、第２の絶縁ベース部材530、シール
ド壁140、第２のカバー部材512、および第１の絶縁ベー
ス部材502の各内部開口部を貫通するボルト532が、メタ
ルスリーブ531内に挿入されている。フランジ536を有す
るナット534が、コイル104、第１のカバー部材504、お
よび第１の絶縁ベース部材502の各開口部を貫通し、ボ
ルト532をネジによって締結する。ナットのフランジ536
はコイル104に係合し、隔離部材500のアセンブリを押し
つけて一体化し、隔離部材とコイル104をシールド壁140
へ固定する。First insulating base member 502 includes a collar 528 that extends through an opening in shield wall 140. The isolation member 500 further includes a second insulating base member 530 located on the opposite side of the shield wall 140 with respect to the first insulating base member 502.
Bolts 532 penetrating through the internal openings of the metal sleeve 531, the second insulating base member 530, the shield wall 140, the second cover member 512, and the first insulating base member 502 are inserted into the metal sleeve 531. ing. A nut 534 having a flange 536 passes through each opening of the coil 104, the first cover member 504, and the first insulating base member 502, and the bolt 532 is fastened with a screw. Nut flange 536
Engages the coil 104 and presses the assembly of the isolating member 500 to unite, and separates the isolating member and the coil 104 from the shield wall 140.
Fix to.

第１の絶縁ベース部材502のカラー528は、メタルスリ
ーブ531とボルト532を、接地されたシールド壁140から
絶縁する。ボルト532とナット534の圧縮力が、セラミッ
ク等の壊れやすい材料で作られている絶縁部材を壊さな
いように、カラー528と第２の絶縁ベース部材530の間に
間隔538が空けられている。ボルト532の頭は、第３の絶
縁部材540でカバーしてもよく、これは図示の実施例に
おいてはボタン状である。第２の絶縁ベース部材は、絶
縁カバー部材540を所定位置に保持するため、絶縁カバ
ー部材540のリップ544が挿入されるシールド壁140から
間隔を空けた、フランジ542を備える。The collar 528 of the first insulating base member 502 insulates the metal sleeve 531 and the bolt 532 from the grounded shield wall 140. A gap 538 is provided between the collar 528 and the second insulating base member 530 so that the compressive force of the bolt 532 and the nut 534 does not break the insulating member made of a fragile material such as ceramic. The head of the bolt 532 may be covered by a third insulating member 540, which in the embodiment shown is button-shaped. The second insulating base member includes a flange 542 spaced from the shield wall 140 into which the lip 544 of the insulating cover member 540 is inserted to hold the insulating cover member 540 in place.

図８は、代替実施例によるフィードスルー隔離部材60
0の断面図である。図７の支持隔離部材500と同様に、フ
ィードスルー隔離部材600は、円筒形絶縁ベース部材602
と、シールドの壁140に対して実質的に横断方向のラビ
リンス通路610を形成するため、ベース部材602の側面60
8から間隔を空けた円筒形の側壁606を備えた第２のカッ
プ状金属製カバー部材604とを備える。更に、図８の隔
離部材600は、ショートした導電経路形成の可能性を更
に低減するため、通路610にほぼ平行に配向される第２
の迷路通路616を形成するように、第１のカバー部材604
の側面606から間隔をあけた円筒形の側壁614を備えた、
第２のカップ状金属製カバー部材612を備える。FIG. 8 illustrates a feedthrough isolation member 60 according to an alternative embodiment.
It is sectional drawing of 0. Like the support isolation member 500 of FIG. 7, the feedthrough isolation member 600 includes a cylindrical insulating base member 602.
And a side surface 60 of the base member 602 to form a substantially transverse labyrinth passage 610 with respect to the shield wall 140.
A second cup-shaped metal cover member 604 having a cylindrical side wall 606 spaced from 8. In addition, the isolation member 600 of FIG. 8 may be provided with a second orientation oriented substantially parallel to the passage 610 to further reduce the possibility of shorted conductive paths.
The first cover member 604 is formed so as to form the maze passage 616 of FIG.
With a cylindrical side wall 614 spaced from the side 606 of the
A second cup-shaped metal cover member 612 is provided.

第２のカバー部材612は、ネジ固定具617によってシー
ルド壁140へ固定され、これによって第２のカバー部材6
12はシールド壁140へ確実に固定されて電気的接触を保
ち、従って接地されて第１のカバー部材604のスパッタ
リングを遅延させる。固定具の穴に捕捉される恐れのあ
るガスを逃がすため、第２のカバー部材内の環状溝618
が、固定具617用のネジ孔に通じている。第１のカバー
部材604の端と第２のカバー部材612との間のベース部材
のショルダ620は、絶縁ベース部材602上への応力を避け
るため十分な間隔を空けている。The second cover member 612 is fixed to the shield wall 140 by the screw fixing member 617, whereby the second cover member 6
12 is securely secured to shield wall 140 to maintain electrical contact, and thus is grounded to delay sputtering of first cover member 604. An annular groove 618 in the second cover member to release any gas that may be trapped in the holes in the fixture.
However, it leads to a screw hole for the fixture 617. The base member shoulder 620 between the end of the first cover member 604 and the second cover member 612 is sufficiently spaced to avoid stress on the insulating base member 602.

第１の絶縁ベース部材602は、シールド壁140の開口部
を貫通して延びるカラー628を備える。シールド壁140の
一方から他方へと貫通する導体金属スリーブ630が、絶
縁ベース部材602とカラー628内へ挿入されている。隔離
部材600は更に、第１の絶縁ベース部材602に対してシー
ルド壁140の反対側に位置する第２の絶縁ベース部材632
を備える。導体金属バー633が、第２の絶縁ベース部材6
32へ挿入されて、スリーブ630の端に係合している。導
体金属バー633に嵌合したボルト634が、バー633とスリ
ーブ630内の孔を、シールド壁140のコイル側へ貫通して
いる。フランジ636を有するナット635が、コイル104、
第１のカバー部材604、およびスリーブ630の各内部開口
部を貫通し、ボルト634へネジによって締結される。ナ
ットのフランジ636はコイル104に係合し、隔離部材600
のアセンブリを押しつけて一体化し、フィードスルー隔
離部材とコイル104をシールド壁140へ固定する。First insulating base member 602 includes a collar 628 that extends through an opening in shield wall 140. A conductive metal sleeve 630 penetrating from one side of the shield wall 140 to the other is inserted into the insulating base member 602 and the collar 628. The isolation member 600 further includes a second insulating base member 632 located on the opposite side of the shield wall 140 with respect to the first insulating base member 602.
Is provided. The conductive metal bar 633 is connected to the second insulating base member 6.
32 and engages the end of the sleeve 630. A bolt 634 fitted to the conductor metal bar 633 passes through the hole in the bar 633 and the sleeve 630 toward the coil side of the shield wall 140. Nut 635 with flange 636, coil 104,
The first cover member 604 and the internal opening of the sleeve 630 are penetrated, and fastened to the bolt 634 by screws. The nut flange 636 engages the coil 104 and the isolation member 600
Are pressed together to secure the feedthrough isolation member and the coil 104 to the shield wall 140.

第１の絶縁ベース部材602のカラー628は、メタルスリ
ーブ630とボルト634を、接地されたシールド壁140から
絶縁する。第２の絶縁部材632は、導電性のバー633を、
接地されたシールド壁140から絶縁する。RF電流は、チ
ャンバの外部のRF電力源から導電性バー633の表面を沿
って、スリーブ630の表面を通り、スリーブの端に係合
している第１のカバー部材604を通って、第１のカバー
部材604に係合しているコイル104へ流れる。スリーブ63
0は、第１の絶縁ベース部材602を所定位置に保持するた
めのショルダ637を有する。しかし、ボルト634とナット
635の圧縮力が、セラミックなどの壊れやすい材料で作
られている絶縁部材を壊さないように、ショルダ637と
第１の絶縁ベース部材604との間に間隔638が空けられて
いる。The collar 628 of the first insulating base member 602 insulates the metal sleeve 630 and the bolt 634 from the grounded shield wall 140. The second insulating member 632 includes a conductive bar 633,
It is insulated from the grounded shield wall 140. RF current from a source of RF power external to the chamber, along the surface of the conductive bar 633, through the surface of the sleeve 630, through the first cover member 604 engaging the end of the sleeve, and through the first Flows to the coil 104 engaged with the cover member 604 of FIG. Sleeve 63
Numeral 0 has a shoulder 637 for holding the first insulating base member 602 at a predetermined position. But bolt 634 and nut
A gap 638 is provided between the shoulder 637 and the first insulating base member 604 so that the compressive force of 635 does not break the insulating member made of a fragile material such as ceramic.

上記のように、外部の発生装置からフィードスルーへ
RF電流を通す導電性バー633は、第２の絶縁部材632内に
配置されている。導電性バー633の他端とボルト634の端
を、第３の絶縁部材640が覆っている。両絶縁部材632、
640は、RF導体部分の形状に倣ってその周りの空間を充
たし、導電性バー633とボルト634からのプラズマ形成と
アーク発生を抑制するため、ダークスペースより大きい
空間を残さないようになっている。As described above, from external generator to feedthrough
A conductive bar 633 for conducting RF current is disposed in the second insulating member 632. A third insulating member 640 covers the other end of the conductive bar 633 and the end of the bolt 634. Both insulating members 632,
The 640 follows the shape of the RF conductor part, fills the space around it, suppresses plasma formation and arc generation from the conductive bar 633 and bolt 634, so that no space larger than dark space is left .

基板上への堆積の均一性改善のため、コイルのスパッ
タリングが望まれる用途においては、コイル104が、タ
ーゲット110の見通し線の範囲内にあるように、そのコ
イルを基板に近づけて配置してもよい。しかしそのよう
に配置すると、隔離部材上への堆積の可能性がある。更
に、コイルが基板112に「影を落とす（shadow）」こと
がないように、コイルの位置は、ターゲット110の縁と
基板112の縁とを結ぶ線を越えないことが望ましい。In applications where sputtering of the coil is desired to improve the uniformity of deposition on the substrate, the coil may be positioned closer to the substrate such that the coil 104 is within the line of sight of the target 110. Good. However, such an arrangement has the potential for deposition on the isolation member. Further, it is desirable that the location of the coil not exceed the line connecting the edge of the target 110 and the edge of the substrate 112 so that the coil does not "shadow" the substrate 112.

もちろん、本発明の種々の態様において、本発明の変
形は、当該技術に精通する者にとっては明白であり、そ
の変形のうちのあるものは検討後に明らかになるもので
あり、またあるものは機械的および電子的設計の常套手
段であると理解される。特定の用途次第で特定の設計と
なる、他の実施例も可能である。従って、本発明の範囲
は、本明細書に記載した特定の実施例によって限定され
ず、添付の各特許請求項とその同等事項によってのみ定
義されるものとする。Of course, in various aspects of the invention, modifications of the invention will be apparent to those skilled in the art, some of which will become apparent after consideration, and some of which will be mechanical. Is understood to be a conventional means of electronic and electronic design. Other embodiments are possible, with particular designs depending on the particular application. Therefore, the scope of the present invention should not be limited by the particular embodiments described herein, but only by the appended claims and their equivalents.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.⁷ 識別記号ＦＩＨ０１Ｌ 21/205 Ｈ０１Ｌ 21/205 21/285 21/285 Ｓ (72)発明者フォースター，ジョンアメリカ合衆国カリフォルニア州サンフランシスコハラムストリート 41 (72)発明者スティムソン，ブラッドリー，オー. アメリカ合衆国カリフォルニア州サンノゼハンチェットアヴェニュー 1257 (72)発明者エデルスタイン，セルジオアメリカ合衆国カリフォルニア州ロスガトスエルアルティロ 117 (72)発明者グルーンズ，ハワードアメリカ合衆国カリフォルニア州サンタクルーズトレヴェッサンアヴェニュー 237 (72)発明者テップマン，アヴィアメリカ合衆国カリフォルニア州クパティノレインボードライヴ 21610 (72)発明者シュ，ゼンアメリカ合衆国カリフォルニア州フォースターシティーハドソンベイストリート 270 (56)参考文献特開平10−229056（ＪＰ，Ａ) (58)調査した分野(Int.Cl.⁷，ＤＢ名) H05H 1/46 C23C 14/35 C23C 16/50 H01L 21/3065 ──────────────────────────────────────────────────の Continued on front page (51) Int.Cl. ⁷ Identification FI FI01L 21/205 H01L 21/205 21/285 21/285 S (72) Inventor Forster, John San Francisco Haram Street, California United States of America 41 (72) Inventor Stimson, Bradley, OH. United States of America San Jose Hanchet Avenue, California 1257 (72) Inventor Edelstein, Sergio United States of America Los Gatos El Artillo, California 117 (72) Inventor Groenes, Howard United States of America Santa Cruise, California Trevessan Avenue 237 (72) Inventor Tepman, Avi United States of America California Ku Patino Rainbow Drive 21610 (72) Inventor Shu, Zen Forster City Hudson Bay Street, California, United States of America 270 (56) References JP-A-10-229056 (JP, A) (58) Fields studied (Int. Cl. ⁷ , DB name) H05H 1/46 C23C 14/35 C23C 16/50 H01L 21/3065

Claims

(57) [Claims]

1. An apparatus for energizing a plasma in a semiconductor manufacturing system by coupling energy into the plasma, comprising: a target; a chamber shield; and a space spaced outwardly from the chamber shield; A semiconductor manufacturing chamber, comprising: a first wall extending vertically in an approached state; and a plasma confinement region at least partially defined by the chamber shield and the first wall; A coil supported at a location at least partially exposed to the plasma confinement region on a wall of the device and positioned to couple energy into the plasma confinement region.

2. The sputtering target, wherein the target is located at a boundary of the plasma confinement region to define a portion of the plasma confinement region that is vertically aligned with the sputtering target. The first wall of claim 1, wherein the first wall is substantially recessed outwardly from the chamber shield such that the first wall is positioned outside a portion of the plasma confinement region that is vertically aligned with the target. apparatus.

3. The method for supporting a semiconductor workpiece positioned opposite a target across said plasma confinement region to define a portion of said plasma confinement region vertically aligned above a pedestal. A pedestal, wherein the first wall is sufficiently outwardly from the chamber shield with respect to the plasma confinement region such that the coil is positioned outside the plasma confinement region vertically aligned above the pedestal. 3. The device of claim 2, wherein the device is retracted.

4. The apparatus according to claim 1, wherein said coil is disposed between said first wall in said chamber and said chamber shield, and for collecting particulate matter emanating from a surface of said coil.
The apparatus of claim 3, further comprising a floor wall located below the coil between the first wall and the chamber shield.

5. A shield extending at least partially around said target so as to prevent access of an amount of material sputtered from at least a portion of said target from contacting a portion of said coil. The device of claim 1, further comprising a member.

6. A shield extending at least partially around said target so as to prevent access of an amount of material sputtered from at least a portion of said target from contacting a portion of said coil. Further comprising a member,
The apparatus of claim 4, wherein the shield member comprises a second wall adjacent to the first wall.

7. A system extending between said coil and said first wall,
The device of claim 1, further comprising a maze structural member spaced from the first wall.

8. An apparatus for energizing a plasma in a semiconductor manufacturing chamber by coupling energy into the plasma, comprising: a substantially annular shield; a generally disk-shaped target located above the shield; An adapter ring disposed between the shield and the target and having a recess therein, wherein the adapter ring is at least partially disposed within the recess and coupled to couple energy into a plasma confinement region. A device having a coil that is energized by a power supply.

9. The adapter ring having an adapter wall for carrying the coil and forming the boundary of the recess, wherein the adapter wall is recessed outwardly with respect to the shield. The described device.

10. The apparatus of claim 9, wherein said adapter ring further comprises a floor wall located below said coil for collecting particulate matter from said coil.

11. The adapter ring shields the coil from at least a part of the target,
11. The device according to claim 10, further comprising a ceiling wall disposed above the coil.

12. An apparatus for energizing a plasma in a semiconductor manufacturing system by coupling energy into the plasma, comprising: a first wall; and a plasma confinement region at least partially surrounded by the first wall. A coil supported on the first wall and arranged to couple energy into the plasma confinement region; a target disposed above the plasma confinement region; An apparatus comprising a second wall disposed between the target and the first wall to shield the target from the amount of material sputtered from the target.

13. The apparatus of claim 12, wherein said coil is positioned vertically below said second wall.

14. An isolation member for supporting a coil in a semiconductor manufacturing system having a wall on which deposition material is deposited, a first base member adapted to be connected to said wall; A first cover member adapted to be connected to a coil, wherein the cover member is arranged to cover at least a portion of the base member, and wherein the cover member and the base member are connected to the base member and the base member. An isolation member defining a passage between the cover member and at least one of the cover member and the base member made of an insulating material.

15. The isolation member according to claim 14, further comprising a second cover member disposed so as to at least partially cover said first cover member.

16. The isolation member according to claim 15, wherein each of said first and second cover members is cup-shaped.

17. The isolation member according to claim 15, wherein the second cover member includes a conductive metal.

18. The isolation member according to claim 17, wherein said second cover member is biased at a potential to suppress sputtering of said second cover member.

19. The isolation member according to claim 18, wherein said second cover member is coupled to electrical ground.

20. The system according to claim 20, wherein the second cover member is spaced from the first cover member to define a passage between the first cover member and the second cover member. 15. The separating member according to 15.

21. A second structure adapted to be coupled to said wall.
And a fastener for fastening the first base member and the second base member between the first base member and the second base member to press the wall. 15. The isolation member according to claim 14, further comprising:

22. The first base member and the second base member each include a shoulder portion, wherein the shoulder portion is arranged to face a shoulder portion of the other base member, and 22. The isolation member according to claim 21, wherein a portion is between the first base member and the second base member.

23. The wall having an opening, one of the first base member and the second base member having a collar portion adapted to extend through the wall opening. 23. The isolation member according to claim 22,

24. The isolation member according to claim 23, wherein said collar portion is spaced from the other of said first and second base members.

25. The isolation member according to claim 24, wherein said first and second base members are formed of an electrically insulating material.

26. The isolation member according to claim 24, wherein said first and second base members are formed of a ceramic material.

27. A system comprising: a second cover member disposed to at least partially cover the first cover member; wherein the fastener comprises a post and the wall;
The first and second cover members, the first and second cover members so as to pass through respective openings of the wall, the first and second cover members, and the first and second base members. 22. The isolation member of claim 21, wherein the base member includes the opening aligned to receive the post.

28. The isolation member, wherein the post has a first end formed of conductive material and coupled to the coil, and a second end extending through an opening in the wall. Further includes a third cover member disposed so as to cover at least a part of the second end of the post;
28. The isolation member according to claim 27, wherein the cover member is formed of an insulating material.

29. To retain the third cover member on the second base member, the second base member has a shoulder portion spaced from the wall, and wherein the third base member has a shoulder portion spaced from the wall. 29. The isolation member according to claim 28, wherein the cover member has a lip portion located between the wall and a shoulder portion of the second base member.

30. The coil defines an opening adapted to receive the fastener, wherein the fastener comprises:
28. The isolation member according to claim 27, further comprising a flange adapted to engage the coil.

31. The fastener further comprising a nut having a threaded portion and the flange portion, wherein the post comprises:
31. The isolation member according to claim 30, comprising a threaded portion adapted to lock and retain a threaded portion of the nut.

32. The cover member and the base member are spaced so as to define a plurality of passages between the cover member and the base member, the passages permit passage of deposited material through the passages. 15. The isolation member according to claim 14, wherein the isolation member has an angle with each other to reduce the speed of the vehicle.

33. The base member has an outer periphery defining a diameter, the cover member has an inner periphery spaced from the outer periphery of the base member by a first predetermined gap, and the gap comprises: 15. The isolation member of claim 14, wherein the isolation member defines a first of the plurality of passages, and wherein a ratio of a base member diameter to the predetermined gap is 14 or greater.

34. The isolation of claim 33, wherein said first passage is of a first predetermined length, and wherein said first predetermined length has an aspect ratio to said predetermined gap of 2 or more. Element.

35. The base member according to claim 14, wherein the base member has a front surface defining a plurality of grooves coupled to at least one of the plurality of passages for slowing the passage of deposited material through the passages. Isolation member.

36. The isolation member according to claim 35, wherein the base member has three concentric grooves, and the outermost groove has the largest width.

37. The base member has a front surface, the cover member has a back surface, and one of the base member and the cover member has an insulating upright wall adjacent to the center thereof. The upright wall separates the front surface of the base member from the back surface of the cover member by a first predetermined gap, and the first predetermined gap has a first predetermined length among a plurality of passage walls. 15. The isolation member according to claim 14, wherein a ratio of the first predetermined length to the first predetermined gap is 6 or more.

38. In a semiconductor manufacturing system, an isolation member for coupling an RF current to a coil through an opening in a wall, wherein the first member extends through the opening in the wall.
A first conductive member having a first end and a second end, wherein the first end is disposed on a first side of the wall and coupled to an RF current source. And the second end is
A conductive member disposed on a second side of the wall opposite the first side of the wall and electrically coupled to the coil; and insulating the conductive member from the wall. A first insulating base member configured to extend between the wall and an opening in the wall; a first cover disposed to cover at least a portion of the base member A member; wherein the first cover member and the base member define a passage between the first base member and the first cover member; an isolation member.

39. The isolation member according to claim 38, further comprising a second cover member arranged to at least partially cover said first cover member.

40. The isolation member according to claim 39, wherein each of said first and second cover members is cup-shaped.

41. The isolation member according to claim 39, wherein said second cover member includes a conductive metal.

42. The isolation member according to claim 41, wherein said second cover member is biased at a potential to suppress sputtering of said second cover member.

43. The isolation member according to claim 42, wherein said second cover member is coupled to electrical ground.

44. The second cover member is spaced from the first cover member to define a passage between the first cover member and the second cover member. Item 43. The isolation member according to Item 38.

45. A second conductor member disposed on said first side of said wall and adapted to be electrically coupled to said first conductor member, said second conductor member comprising: 39. The isolation member of claim 38, further comprising a second insulating base member adapted to be coupled to the wall between the second conductor member and the wall to insulate from the wall.

46. The isolation member according to claim 45, further comprising a first fastener for fastening the first and second conductor members together.

47. A second cover member disposed to at least partially cover said first cover member, said second cover member being disposed on said second cover member.
47. The isolation member according to claim 46, further comprising: a second fastener for fixing the cover member to the wall.

48. The isolation member according to claim 47, wherein said second cover defines a passage coupled to said second fastener for venting said second fastener.

49. The first and second conductor members each include:
46. The isolation member according to claim 45, further comprising a shoulder portion arranged to face the shoulder portion of the another conductor member.

50. The apparatus according to claim 50, wherein said wall has an opening and said first and second walls are open.
50. The isolation member of claim 49, wherein one of the base members has a cover portion configured to extend through an opening in the wall.

51. The isolation member according to claim 50, wherein said portion is spaced from said other of said first and second base members.

52. The isolation member according to claim 51, wherein said first and second base members are formed of an electrically insulating material.

53. The isolation member according to claim 38, wherein said first and second base members are formed of a ceramic material.

54. A system according to claim 54, further comprising a second cover member disposed to at least partially cover said first cover member, wherein said fastener comprises a post and said wall, said post comprising said wall, said second cover member and said second cover member. First and second cover members, the first
The first and second cover members and the first and second base members are arranged to respectively receive the posts so as to pass through the respective openings of the first and second base members. 46. The isolation member according to claim 45, comprising an opening.

55. The post is formed of a conductive material and has a first end coupled to the coil and a second end extending through an opening in the wall, wherein the isolation member is And a third cover member arranged to cover at least a part of the second end of the post,
55. The isolation member according to claim 54, wherein the cover member is made of an insulating material.

56. A method for retaining the third cover member on the second base member, the second base member having a shoulder portion spaced from the wall; 30. The isolation member according to claim 29, wherein the cover member has a lip portion located between the wall and a shoulder portion of the second base member.

57. The isolation member according to claim 54, wherein said coil defines an opening adapted to receive said fastener, said fastener further comprising a flange adapted to engage said coil. .

58. The fastener further comprises a nut having a threaded portion and the flange portion, and the post has a threaded portion adapted to lock and retain the threaded portion of the nut. 57. The separating member according to 57.

59. The cover member and the base member are spaced so as to define a plurality of passages between the cover member and the base member, the passages permit passage of deposited material through the passages. 39. The isolation member of claim 38, wherein the isolation member is angled with respect to each other to reduce speed.

60. The base member having an outer periphery defining a diameter, the cover member having an inner periphery spaced from the outer periphery of the base member by a first predetermined gap, wherein the gap comprises a plurality of said gaps. Defining a first one of the passages, wherein the ratio of the diameter of the base member to the predetermined gap is 14;
39. The isolation member according to claim 38, wherein:

61. The isolation of claim 60, wherein the first passage is of a first predetermined length, and wherein the first predetermined length has an aspect ratio to the predetermined gap of 2 or more. Element.

62. The method according to claim 38, wherein the base member has a front surface defining a plurality of grooves coupled to at least one of the plurality of passages for slowing the passage of deposition material through the passages. Isolation member.

63. The isolation member according to claim 62, wherein the base member has three concentric grooves, and the outermost groove has the largest width.

64. The base member has a front surface, the cover member has a back surface, and one of the base member and the cover member has an insulating upright wall adjacent to the center thereof. The upright wall separates a front surface of the base member from a back surface of the cover member by a first predetermined gap, and the first predetermined gap has a first predetermined length among a plurality of passages. 39. The isolation member of claim 38, wherein the ratio of the first predetermined length to the first predetermined gap is 6 or greater.

65. A method for supporting a coil in a semiconductor manufacturing system having a wall on which a deposition material is deposited, comprising: disposing a base member on the wall; and a first cover member above the base member. To support the coil, the cover member and the base member define a plurality of passages between the base member and the first cover member, and a plurality of passages between the first cover member and the base member. At least one is formed of an insulating material; a method.

66. The method of claim 65, wherein said plurality of passages are angled with respect to each other to slow the passage of deposition material through said passages.

67. The base member has an outer periphery defining a diameter, the cover member has an inner periphery spaced from the outer periphery of the base member by a first predetermined gap, and the gap is formed by the plurality of gaps. 66. The method of claim 65, wherein a ratio of the diameter of the base member to the predetermined gap is greater than or equal to 14 defining a first of the passages.

68. The method of claim 67, wherein said first passage is of a first predetermined length and said first predetermined length has an aspect ratio to said predetermined gap of 2 or more. .

69. The system of claim 65, wherein the base member has a front surface defining a plurality of grooves coupled to at least one of the plurality of passages for slowing passage of deposition material through the passage. the method of.

70. The method of claim 69, wherein said base member comprises three concentric grooves, of which the outermost groove has the widest width.

71. The base member has a front surface, and the first member has a first surface.
Has a back surface, and the base member and one of the first cover members are arranged such that the front surface of the base member is located near the center of the member by a first predetermined gap from the back surface of the first cover member. An insulating upstanding wall spaced apart, the predetermined gap defining a first of the plurality of passages having a first predetermined length, wherein the first predetermined length of the first plurality of passages is defined by the first predetermined length; 66. The ratio for a given gap is 6 or more.
The described method.

72. The method of claim 60, further comprising using a second cover member to at least partially cover said first cover member.

73. The method according to claim 66, wherein said first and second cover members are each cup-shaped.

74. The method according to claim 66, wherein said second cover member comprises a conductive metal.

75. The method of claim 66, further comprising biasing said second cover member at a potential to suppress sputtering of said second cover member.

76. The method according to claim 75, wherein said second cover member is coupled to electrical ground.

77. The second cover member is spaced from the first cover member to define a passage between the first cover member and the second cover member. Item 66. The method according to Item 66.

78. A first member received in said insulating base member.
66. The method of claim 65, further comprising passing an RF current through the conductive member of claim 65.

79. The method according to claim 79, wherein the first wall is disposed on one side of the wall.
Passing a RF current through a second conductive member adapted to be electrically coupled to the conductive member of the second conductive member; and insulating the second conductive member from the wall by a second insulating base member. 79. The method of claim 78, further comprising positioning between the second conductive member and the wall.

80. The method according to claim 79, further comprising fastening the first and second conductive members together using a first fastener.

81. At least partially covering the first cover member with a second cover member, and securing the second cover member to the wall with a second fastener. 81. The method of claim 80, comprising:

82. The method of claim 81, wherein said second fastener is vented using a passage defined by said second cover.

83. An isolation member for supporting a coil in a semiconductor manufacturing system having a wall on which deposition material is deposited, a first base member adapted to be connected to the wall; A first cover member adapted to be connected to a coil, wherein the cover member is arranged to cover at least a portion of the base member, and wherein the cover member and the base member are connected to the base member and An isolation member, comprising: a first cover member defining a passage between the cover member; and a second cover member disposed to at least partially cover the first cover member.

84. The isolation member according to claim 83, wherein said first cover member and said second cover member face in opposite directions.

85. The isolation member according to claim 83, wherein said second cover member is spaced from said first cover member.

86. In a semiconductor manufacturing system, an isolation member for coupling an RF current to a coil through an opening in a wall, wherein the isolation member is adapted to extend through the opening in the wall.
Wherein the first conductor member has a first end and a second end, the first end being disposed on a first side of the wall and coupled to an RF current source. A first conductor member disposed on a second side of the wall and electrically coupled to the coil; and insulating the conductor member from the wall. A first insulating base member at least partially disposed in an opening of the wall; and a first cover member disposed to cover at least a portion of the base member, A first cover member, wherein the cover member and the base member define a passage between the first base member and the first cover member; and at least partially cover the first cover member. And a second cover member arranged as described above.

87. The isolation member according to claim 86, wherein said first cover member and said second cover member face in opposite directions.

88. The isolation member according to claim 86, wherein said second cover member is spaced from said first cover member.

89. The isolation member according to claim 38, wherein said first cover is spaced from said wall.

90. The isolation member according to claim 38, further comprising a second cover member arranged to prevent sputtered material from accumulating on at least a portion of the first cover member.

91. The isolation member according to claim 90, wherein said first cover member is spaced from said second cover member.