JPH11307262A - El element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an insulating film composition of an EL element capable of depositing without being influenced by organic material and preventing an alkali ion from infiltrating. SOLUTION: An EL element 100 comprises a first electrode layer 2, a first insulating layer 3, a luminescent layer 4, a second insulating layer 5 and a second electrode layer 6 laminated in this order on a glass board, and the first and second insulating layers 3, 5 comprise two kinds of thin films 3A, 3B, 5A, 5B with different resistivity laminated alternately. In these thin films, thickness of thin films 30, 31, 50, 51 coming into contact with the luminescent layer 4 or both electrodes 2, 6 is made thicker in comparison with other thin films 32, 52, and the thin film 30 coming into contact with the first electrode layer 2 and the thin film 50 coming into contact with the upper surface of the luminescent layer 4 are formed by chemical vapor phase epitaxy method or sputtering method.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an EL (electroluminescence) device, and more particularly to prevention of dielectric breakdown of the device.

[0002]

2. Description of the Related Art Conventionally, an EL element has a structure in which an insulating layer is provided to prevent dielectric breakdown across a light emitting layer, and an electrode layer is provided outside the insulating layer. As such an insulating layer, for the purpose of preventing initial dielectric breakdown,
A device using an insulating layer having a structure in which silicon oxide or the like is laminated (see Japanese Patent Application Laid-Open No. Hei 5-07760) has been proposed.

Further, in order to obtain an insulating layer having a high withstand voltage and low optical loss at an early stage, ALE (Atomic Layer Epitaxy) is used.
A method using a laminated combination film (ATO film) in which aluminum oxide and titanium oxide are uniformly and alternately arranged with a thickness of about 0.3 to 100 nm by an pittaxy method as an insulating layer (Japanese Patent Application Laid-Open No. 58-58). -206095)
Has been proposed.

[0004]

The present inventors have studied based on the above-mentioned insulating layer having a laminated structure. In order to prevent dielectric breakdown, the present inventors have proposed an insulating layer having a structure in which thin films having different resistivities are laminated. We thought that we should use it. And
In an EL element in which a first electrode layer, a first insulating layer, a light emitting layer, a second insulating layer, and a second electrode layer are sequentially stacked on an insulating substrate, the first and second insulating layers are different in resistivity. A prototype in which two types of thin films were alternately laminated was manufactured and examined.

However, when the present inventors evaluated the light emission characteristics of the above-mentioned prototype, the effect of preventing the dielectric breakdown was not sufficient. It has been found that a problem of occurrence of a problem occurs. As a result of further intensive studies on the above phenomenon, it was found that the cause was insufficient insulation voltage at the initial stage and deterioration of the insulation voltage during durability. In particular, in the case of an ATO film which is initially said to have a high withstand voltage, the film does not deposit if there is an organic substance such as an organic solvent remaining on the film formation surface during the film formation process by the ALE method.
It was found that there was a portion where no insulating film was present. In a portion where the insulating film does not exist, the withstand voltage is low, and the breakdown occurs when a voltage is applied.

[0006] Further, with time, dielectric breakdown, that is, a non-light emitting portion also appears in a portion where dielectric breakdown does not initially occur, that is, in a portion where an insulating film is present. Alkali ions contained in the glass substrate), the light emitting layer or the electrode layer,
It has been found that this is due to diffusion into the insulating film due to the applied voltage, which impairs the withstand voltage performance of the insulating film.

In view of the above problems, it is a first object of the present invention to provide an insulating film configuration which can be deposited without being affected by organic matter which has been a problem in the conventional ALE method. A second object is to provide an insulating film configuration capable of preventing intrusion.

[0008]

By the way, the organic substance existing in the film forming process by the ALE method is formed before the insulating film is formed, that is, the outermost surface of the first electrode layer (lower electrode layer) or the outermost surface of the light emitting layer. Is formed. The adhesion of the organic substance occurs during the pattern etching performed after the formation of the lower electrode layer and the light emitting layer, and during the subsequent cleaning process, and the resist (organic material) during the pattern etching and the organic solvent such as acetone during the cleaning are used. The remainder corresponds to organic matter.

The ALE mode is a reaction at the atomic level on the outermost surface, and the presence or absence of the reaction is determined by the atoms on the uppermost surface of the base. On the other hand, the present inventors have proposed a sputtering method and a C method.
VD (Chemical Vapor Deposi)
(chemical vapor deposition) method. Sputtering is a physical film forming method, in which sputtered atoms (molecules) having energy of several eV reach the substrate surface,
accumulate. Also, in CVD, a reactant is deposited by utilizing a chemical reaction of a gas on a substrate surface. Suppose, on the outermost surface,
Even if deposition is difficult due to the influence of the underlying organic matter, the film is deposited so as to cover the site from the surroundings due to the high film forming speed, and as a result, the entire surface is covered. As described above, sputtering and CVD are not affected by the underlying organic substance, and can deposit a film several to several tens times faster than the ALE method.

According to the first to seventh aspects of the present invention, based on the above examination, a first electrode (2), a first insulating layer (3), a light emitting layer (4), The second insulating layer (5) and the second electrode (6) are sequentially laminated, and the first and second insulating layers (3, 5) are formed of two types of thin films (3A,
3B, 5A, and 5B) are alternately stacked.

That is, in the first aspect of the present invention,
Thin films (3A, 3A) forming first and second insulating layers (3, 5)
B, 5A, 5B), the thin film (30, 32a) contacting the first electrode (2) and / or the thin film (50, 52a) contacting the upper surface of the light emitting layer (4) is formed by chemical vapor deposition. The film is formed by a sputtering method or a sputtering method.

Thereby, the thin film (30, 32a) and / or the light emitting layer (4) formed on the first electrode (2)
The thin film (50, 52a) formed on the upper surface of the first electrode (2) can be formed on the first electrode (2) and / or the upper surface of the light emitting layer (4), that is, even if an organic substance partially adheres to the underlayer. The deposition can be performed without being affected by the influence, a good film formation can be realized, and the first object can be achieved.

Incidentally, a thin film (3
0, 32a, 50, 52a), an insulating layer (3, 5) having a sufficient withstand voltage can be obtained by depositing a thin film by the ALE method. In addition, it was considered that the above-described penetration of alkali ions into the insulating film could be prevented by increasing the thickness of the insulating film in contact with the glass substrate, the light-emitting layer, or the electrode layer. The invention described in claim 2 has been made based on this idea.

That is, the invention according to claim 2 is the thin film (3A, 3B, 5A, 5B), wherein the thin film contacts the light emitting layer (4) and the thin film contacts the first electrode (2). And at least one of the thin films (30, 31, 50, 51) out of the thin films contacting the second electrode (6) is thicker than the other thin films (32, 52). I have.

This makes it possible to prevent alkali ions from entering the light emitting layer (4), the first electrode (2) or the second electrode (6), and further from the insulating substrate (1), The deterioration of the dielectric strength can be suppressed, and the second object can be achieved in addition to the first object. here,
According to the study of the present inventors, the thin films (30, 31, 50, 51) which are thicker than the other thin films (32, 52) according to claim 2 as in the invention according to claim 3, It is preferable that the thickness is 15 nm or more.

Further, as described in claim 4, the light emitting layer (4) and the thin films (30, 31, 50, 51) in contact with the two electrodes (2, 6) are made of two types having different resistivity. Of the thin films (3A, 3B, 5A, 5B) having the higher resistivity, the electrodes (2,
6) The short circuit can be more reliably prevented. The role of the high-resistance film and the low-resistance film in the thin-film laminated insulating layer is considered as follows. Although insulation in the layer vertical direction is ensured by the high-resistance film, dielectric breakdown easily occurs in the high-resistance film. At the time of this dielectric breakdown, a leak current flows in the direction parallel to the film surface in the low-resistance film, but it is necessary to flow this leak current while suppressing it to some extent.

From such an estimation mechanism, in the thin films (3A, 3B, 5A, 5B), the high-resistance thin film (3
A and 5A) The film and the low-resistance thin films (3B and 5B) were simulated and examined for their respective resistivity. As a result, it was found that each resistivity is preferably set to the values described in claims 5 and 6. . Furthermore, the laminated thin films (3A, 3A,
B, 5A, and 5B), the number of layers was also examined.
It has been found that it is preferable to stack about the same number of sheets in terms of securing insulation properties and the practical thickness of the EL element.

The reference numerals in parentheses of the above means indicate the correspondence with the concrete means described in the embodiment described later.

[0019]

(First Embodiment) FIG. 1 shows a cross-sectional structure of an EL element 100 according to a first embodiment of the present invention.
The EL element 100 is formed on a glass substrate (insulating substrate) 1.
A first electrode layer (lower electrode layer) 2, a first insulating layer (lower insulating layer) 3, a light emitting layer 4, a second insulating layer (upper insulating layer) 5, a second
An electrode layer (upper electrode layer) 6 is sequentially laminated.

The first electrode layer (first electrode) 2 formed on the glass substrate 1 is made of, for example, ITO (indium-tin-tin).
(Oxide), and is patterned in a stripe shape (not shown). Then, a transparent second electrode layer (second electrode) 6 similarly patterned in a stripe shape
To form a matrix-type pixel.

The first insulating layer 3 laminated on the first electrode layer 2 is formed by alternately laminating about 50 to 300 two types of thin films 3A and 3B having different resistivity. In this example, the high-resistance thin film 3A is an insulating film using aluminum oxide (Al ₂ O ₃ ) having a resistivity of 10 ¹⁰ Ω / m ² or more, and the low-resistance thin film 3B is a resistivity of 10 ⁴ Ω / m ^2. a film made of titanium oxide (TiO ₂ ) of m ² to 10 ⁷ Ω / m ² ,
Constitutes an ATO film.

In the first insulating layer 3, the thin film in contact with the upper surface of the first electrode layer 2 and the thin film in contact with the lower surface of the light emitting layer 4 are both thin films 3A, and are in contact with the first electrode layer 2 or the light emitting layer 4. Other thin films 3A and 3B that have not been made (thin film 32)
The film thickness is larger than that of. Here, the thin film 3A in contact with the upper surface of the first electrode layer 2 is referred to as a thin film 30, and the thin film 3A in contact with the lower surface of the light emitting layer 4 is referred to as a thin film 31.

In the first insulating layer 3, these thin films 30,
31 is the light emitting layer 4, the first electrode layer 2, or the glass substrate 1
It functions as a diffusion prevention film for preventing diffusion of alkali ions from the inside into the first insulating layer 3. The thickness is preferably, for example, 15 nm or more. Hereinafter, the thin films 30 and 31 are referred to as diffusion prevention films 30 and 31.

Here, the first insulating layer 3 is formed by first forming a diffusion prevention film 30 by a chemical vapor deposition method (hereinafter referred to as CVD) or a sputtering method, and further forming a thin film 32 and a diffusion prevention film 31 thereon. Are laminated using the ALE method. In this manner, a thin-film laminated insulating layer structure (ATO film in this example) in which two types of thin films 3A and 3B having different resistivity are alternately laminated is formed.

The light emitting layer 4 formed on the first insulating layer 3 can be formed using a known material such as zinc sulfide (ZnS) to which manganese (Mn) is added. The second insulating layer 5 is formed on the light emitting layer 4. The second insulating layer 5 is also formed by alternately stacking two types of thin films 5A and 5B having different resistivity. In this example, the high-resistance thin film 5A and the low-resistance thin film 5B are the same as the thin film 3A and the thin film 3B forming the first insulating layer 3, respectively, and the second insulating layer 5 also forms the ATO film. ing.

In the second insulating layer 5, the thin film (thin film 50) in contact with the upper surface of the light emitting layer 4 and the thin film (thin film 51) in contact with the lower surface of the second electrode layer 6 are both high-resistance thin films 5A. The thickness is larger (for example, 15 nm or more) than other thin films 5A and 5B (thin film 52) which are not in contact with the light emitting layer 4 or the second electrode layer 5. These thin films 50 and 51 function as diffusion preventing films for preventing diffusion of alkali ions from the light emitting layer 4 or the second electrode layer 6. , 51. Then, the diffusion preventing film 50 is formed by CVD or sputtering, and the thin film 52 and the diffusion preventing film 51 are stacked by ALE, whereby the second insulating layer 5 is formed.

According to this embodiment, the first diffusion prevention films 30 and 50 having the first film formation order in each of the insulating layers 3 and 5 can be formed at a higher film formation rate than the ALE method. The film formation is performed by a CVD method or a sputtering method that can form a film quickly on an organic material, and the subsequent film formation is performed by an ALE method.
Therefore, the insulating layers 3 and 5 can be formed to have a uniform thickness, and can be an insulating layer in which dielectric breakdown does not initially occur.

This will be described with reference to FIGS. 2A to 2C which illustrate the formation of the insulating layer. FIG. 2A shows a case in which all film formation is performed by the ALE method (ALE mode). In a portion 80 where an organic substance is present in the first electrode layer 2, the surface reaction in the ALE mode does not proceed, and the first insulation is performed. Layer 3 is not formed. On the other hand, in the present embodiment, by forming the diffusion prevention film 30 by the CVD or the sputtering method, it is possible to cover the entire surface even if an organic substance is present.
As shown in (b), the laminated portion 31 in the ALE mode,
32 can be formed.

Further, according to the present embodiment, each of the insulating layers 3,
5, the laminated structure portions (thin films 32, 52) having a small thickness per one layer and the alkali ion diffusion preventing portions (diffusion preventing films 30, 31,.
50, 51). The former realizes a high withstand voltage, and the latter realizes the electrode 2,
6. An insulating layer that maintains high withstand voltage by reducing diffusion of alkali ions from the light emitting layer 4 or the glass substrate 1 and preventing deterioration of withstand voltage can be realized.

Preferably, the crystal structure of the diffusion preventing films 30, 31, 50, and 51, which are the alkali ion diffusion preventing portions, is in an amorphous state. By being in the amorphous state, it is possible to enhance the effect of preventing diffusion of alkali ions. In the present embodiment, the electrodes 2, 6
Since the self-healing mode insulating film (for example, Al ₂ O ₃ ) is disposed as the diffusion preventing films 30 and 51 in contact with the semiconductor device, the expansion of the breakdown point at the time of dielectric breakdown is prevented, and the non-light emitting portion of the element is made of a human. It also has the effect of not being recognized by the eyes.

Here, the effect of the self-healing mode will be described with reference to an explanatory diagram shown in FIG. FIG. 3 shows a configuration in which a lower electrode layer 82, an insulating layer 83, and an upper electrode layer 84 are sequentially formed on an insulating substrate 81. Note that the insulating layer 83 has a structure in which a light-emitting layer (not shown) is sandwiched. In general, the breakdown state of the insulating film includes a self-healing mode (FIG. 3A) and a propagation mode (FIG. 3B).
are categorized. First, the self-healing mode will be described.

At the time of dielectric breakdown, an opening is formed at a breakdown site of the insulating layer 83 and the upper electrode layer 84. Here, even if the opening of the upper electrode layer 86 becomes large, the creeping current flows between the upper electrode layer 84 and the lower electrode layer 82 through both the openings, so that the breakdown does not progress, and as a result, The size of the broken part of the insulating layer 83 is small, about 1 μm or less.

On the other hand, in the propagation mode, first, the insulating layer 83 is broken to form an opening. At this time, the opening is covered so that the upper electrode layer 84 flows in.
The next destruction is further induced by the short circuit between the upper and lower electrode layers 82 and 84, resulting in a destruction of several hundred μm or more.
It is known that the difference between these breakdown modes differs depending on the material type of the insulating film. For example, Al ₂ O ₃ is self-healing and TiO ₂ is propagating. Therefore, as in the present embodiment, the diffusion barrier films 30 and 5 having the self-healing mode are provided.
By arranging 1 thick near the electrode layers 2 and 6, the insulating layers 3 and 5 as a whole can be in a self-healing mode. Therefore, the use of the insulating layers 3 and 5 makes it possible to provide a high-quality display that does not allow the destructed portion to be recognized even if the destruction occurs.

The materials having the self-healing mode include, in addition to Al ₂ O ₃ , BaTa ₂ O ₆ and PbNb ₂ O
₆ , Ta ₂ O ₅ , Si ₃ N ₄ , Y ₂ O ₃ , and SiO ₂ . Furthermore, the second to fifth embodiments of the present invention will be described below, but mainly different parts from the first embodiment will be described, and the same parts will be denoted by the same reference numerals and description thereof will be omitted.

(Second Embodiment) FIG. 4 shows a cross-sectional structure of an EL device 100 according to a second embodiment of the present invention. In the present embodiment, noting that the alkali ion concentration in the light emitting layer 4 is high, the diffusion preventing film 50 is provided in the second insulating layer 5 in contact with the upper surface of the light emitting layer 4. The diffusion barrier films 30, 31, 51 shown in the embodiment (FIG. 1) do not exist.

Therefore, in the first insulating layer 3, the lowermost and uppermost thin films 3 A of the thin film 32 are formed by the first thin film 32, respectively.
The upper surface of the electrode layer 2 and the lower surface of the light emitting layer 4 are in contact with each other.
In the insulating layer 5, the diffusion prevention film 50 is in contact with the upper surface of the light emitting layer 4, and the uppermost thin film 5 A of the thin film 52 is in contact with the lower surface of the second electrode layer 6. The thin film 32 of the first insulating layer 3
In FIG. 4, a thin film 3A in contact with the upper surface of the first electrode layer 2 (FIG.
Is indicated by a thin film 32a) by a CVD method or a sputtering method.

In the present embodiment, the insulating layers 3 and 5 can be formed to have a uniform thickness, and the second insulating layer 5 can prevent the penetration (diffusion) of alkali ions from the light emitting layer 4. Third Embodiment FIG. 5 shows a cross-sectional configuration of an EL element 100 according to a third embodiment of the present invention. This embodiment focuses on the penetration of alkali ions from the first electrode layer (lower electrode layer) 2 on the glass substrate 1 side and the attachment of organic matter after the patterning step of the first electrode layer 2, and focuses on the glass substrate 1 side. In the first insulating layer 3, a diffusion barrier film 30 is provided in contact with the upper surface of the first electrode layer 2, and the diffusion barrier films 31, 50, and 51 shown in the first embodiment (FIG. 1) are present. do not do.

Therefore, in the first insulating layer 3, the diffusion barrier film 30 contacts the upper surface of the first electrode layer 2, and the uppermost thin film 3 A of the thin film 32 contacts the lower surface of the second electrode layer 6.
In the second insulating layer 5, the lowermost and uppermost thin films 5A of the thin film 52 are in contact with the upper surface of the light emitting layer 4 and the lower surface of the second electrode layer 6, respectively. In the thin film 32 of the second insulating layer 3, a thin film 5A (FIG. 5) in contact with the upper surface of the light emitting layer 4
Is shown by a thin film 52a) by a CVD method or a sputtering method.

In this embodiment, the insulating layers 3 and 5 can be formed to have a uniform thickness, and the first insulating layer 3
Alkali ion penetration (diffusion) from the electrode layer 2 or the glass substrate 1 can be prevented. (Fourth Embodiment) FIG. 6 shows a cross-sectional configuration of an EL element 100 according to a fourth embodiment of the present invention. The present embodiment aims at preventing the entry of alkali ions from the light emitting layer 4, the glass substrate 1, and the first electrode layer 2.

In this embodiment, in the first insulating layer 3 on the glass substrate 1 side, a diffusion preventing film 30 is provided in contact with the upper surface of the first electrode layer 2, and in the second insulating layer 5, the diffusion preventing film 30 is formed on the upper surface of the light emitting layer 4. The diffusion prevention film 50 is provided in contact with the first
The diffusion barrier films 31 and 51 shown in the embodiment (FIG. 1) do not exist. Therefore, in the present embodiment, the contact of the first insulating layer 3 with the lower surface of the light emitting layer 4 and the contact of the second insulating layer 5 with the lower surface of the second electrode layer 6 are each made of the thin film 32.
And the thin film 5A at the top of the thin film 52.

According to this embodiment, the insulating layers 3 and 5 can be formed to have a uniform thickness, and the first insulating layer 3
Alkali ion intrusion (diffusion) from the first electrode layer 2 or the glass substrate 1 can be prevented, while alkali ion intrusion (diffusion) from the light emitting layer 4 can be prevented in the second insulating layer 5. (Fifth Embodiment) FIG. 7 shows a sectional configuration of an EL element 100 according to a fifth embodiment of the present invention. The present embodiment aims at preventing alkali ions from entering from the glass substrate 1 and the electrodes 2 and 6.

In this embodiment, a diffusion barrier film 30 is provided on the first insulating layer 3 on the glass substrate 1 side in contact with the upper surface of the first electrode layer 2, and the second electrode layer 6 is provided on the second insulating layer 5. The diffusion prevention film 51 is provided in contact with the lower surface, and the diffusion prevention films 31 and 50 shown in the first embodiment (FIG. 1) are not present. Therefore, in the present embodiment, the contact of the first insulating layer 3 with the lower surface of the light emitting layer 4 and the contact of the second insulating layer 5 with the upper surface of the light emitting layer 4 are each made of the thin film 32.
And the lowermost thin film 5A of the thin film 52.

According to the present embodiment, the insulating layers 3 and 5 can be formed to have a uniform film thickness.
Alkali ion intrusion (diffusion) from the first electrode layer 2 or the glass substrate 1 can be prevented, while alkali ion intrusion (diffusion) from the second electrode layer 6 in the second insulating layer 5 can be prevented. (Other Embodiments) The insulating layers 3, 5,
In the above, the thin films 30, 32a directly above the first electrode layer 2,
At least one of the thin films 50 and 52a just above the light emitting layer 4 may be formed by the CVD method or the sputtering method. Thus, it is possible to provide an insulating film configuration that can be deposited without being affected by an organic substance which has conventionally been a problem in the ALE method.

Further, of the thin films 3A, 3B, 5A, and 5B, the diffusion prevention film 30 and the thin film 32 that are in contact with the first electrode 2
a, and a diffusion prevention film 50 in contact with the upper surface of the light emitting layer 4;
The thin film 52a can be formed by using a method other than the CVD method or the sputtering method if organic substances are not left in etching or cleaning.
The film may be formed by the ALE method.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram illustrating a cross-sectional configuration of an EL element according to a first embodiment of the present invention.

FIG. 2 is an explanatory diagram illustrating formation of an insulating layer.

FIG. 3 is an explanatory diagram illustrating dielectric breakdown in an EL element.

FIG. 4 is an explanatory diagram illustrating a cross-sectional configuration of an EL element according to a second embodiment of the present invention.

FIG. 5 is an explanatory diagram showing a cross-sectional configuration of the EL element according to the first embodiment of the present invention.

FIG. 6 is an explanatory diagram showing a cross-sectional configuration of the EL element according to the first embodiment of the present invention.

FIG. 7 is an explanatory diagram illustrating a cross-sectional configuration of the EL element according to the first embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 2 ... 1st electrode layer, 3 ... 1st insulating layer, 3
A, 5A: high-resistance thin film, 3B, 5B: low-resistance thin film,
4 light emitting layer, 5 second insulating layer, 6 second electrode layer, 30,
31, 50, 51: anti-diffusion film, 32, 52: thin film thinner than the anti-diffusion film, 32a: thin film which is thinner than the anti-diffusion film, which is in contact with the first electrode layer, 52a: thin film which is thinner than the anti-diffusion film Thin film in contact with the upper surface of the light emitting layer.

Claims (7)

[Claims] 1. A first electrode (2), a first insulating layer (3), a light emitting layer (4), a second insulating layer (5), and a second electrode (6) are provided on an insulating substrate (1). In the EL element which is sequentially laminated, the first and second insulating layers (3, 5) are formed by alternately laminating two types of thin films (3A, 3B, 5A, 5B) having different resistivity. The first of the thin films (3A, 3B, 5A, 5B)
A thin film (30, 32a) contacting the electrode (2) and / or a thin film (50, 5a) contacting the upper surface of the light emitting layer (4).
2a) An EL element formed by a chemical vapor deposition method or a sputtering method. 2. The thin film (3A, 3B, 5A, 5B), wherein the thin film contacts the light emitting layer (4), the thin film contacts the first electrode (2), and the second electrode (6). ), At least one of the thin films (30, 3)
The EL device according to claim 1, wherein the thickness of each of the first, second and third thin films is larger than that of the other thin films. 3. The thin film (3A, 3B, 5A, 5B), wherein the thin film contacts the light emitting layer (4), the thin film contacts the first electrode (2), and the second electrode (6). ), At least one of the thin films (30, 3)
3. The EL device according to claim 2, wherein (1, 50, 51) has a thickness of 15 nm or more. 4. The thin film (3A, 3B, 5A, 5B), wherein the thin film contacts the light emitting layer (4), the thin film contacts the first electrode (2), and the second electrode (6). ) Are in contact with the two types of thin films (3A, 3B, 5A,
The EL device according to any one of claims 1 to 3, wherein the EL device is made of a thin film (3A, 5A) having a higher resistivity among 5B). 5. The thin film having the higher resistivity (3A, 5A).
A) has a resistivity of 10 ^TenΩ / m^TwoThe above insulating film
The method according to any one of claims 1 to 4, wherein
EL element. 6. The two thin films (3) having different resistivities.
A, 3B, 5A, and 5B), the thin film having the higher resistivity (3A, 5A) is an insulating film having a resistivity of 10 ¹⁰ Ω / m ² or more, and the thin film having the lower resistivity (3B, 5B). The EL according to any one of claims 1 to 5, wherein 5B) has a resistivity of 10 ⁴ Ω / m ² to 10 ⁷ Ω / m ^2.
element. 7. The two kinds of thin films (3) having different resistivities.
A, 3B, 5A, and 5B) are alternately stacked by about 50 to 300 sheets, wherein the EL element according to any one of claims 1 to 6, wherein