KR20060019821A - Flexible display using plastic substrate and manufacturing method thereof - Google Patents

Abstract

The present invention forms a perylene compound as a substrate protective film on at least one of the upper and lower portions of the plastic substrate, thereby blocking oxygen or moisture from flowing from the outside, and by using various types of developer or etchant used in forming a later laminated structure. It exhibits a strong chemical resistance that does not break, and can be prevented from bending or deforming the plastic substrate since the deposition can be performed while the plastic substrate is placed at room temperature during the deposition process.

Plastic Substrate, Perylene, Substrate Protective Film, Chemical Resistance

Description

Flexible display device using plastic substrate and manufacturing method thereof {FLEXIBLE DISPLAY USING PLASTIC SUBSTRATE AND MANUFACTURING METHOD THEREOF}

1 shows a layout view of a thin film transistor array panel,

FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG. 1;

3 to 8 illustrate a method of manufacturing a thin film transistor array panel,

9 to 12 show a method of manufacturing a color filter display panel,

13 illustrates a layout view of an organic light emitting display device,

FIG. 14 is a cross-sectional view taken along the line XIV-XIV ′ of FIG. 13;

15 to 22 illustrate a method of manufacturing an organic light emitting display device.

* Explanation of symbols for main parts of the drawings

110, 210: plastic substrate 111a, 111b, 211a, 211b: substrate protective film

124: gate electrode 140: interlayer insulating film

150: intrinsic semiconductor layer 160: impurity semiconductor layer

173: source electrode 175: drain electrode

220: black matrix 230: color filter

270: common electrode 70: organic light emitting layer

803: partition 901: pixel electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flexible display, and more particularly, to a flexible display device using a parylene compound as a substrate protective layer in a flexible display device including a plastic substrate, and a method of manufacturing the same.

As the Internet becomes more popular and the amount of information communicated explosively, the future will create an environment of 'ubiquitous display' where people can access information anytime and anywhere. And the role of portable displays such as PDAs have become important. In order to implement such a ubiquitous display environment, the portability of the display is required to directly access information at a desired time and place, and a large screen characteristic for displaying various multimedia information is required. Accordingly, in order to simultaneously satisfy such portability and large screen characteristics, there is a need to develop a display in a form that can be expanded and used when functioning as a display by giving flexibility to the display and folded and stored when carrying.

Among the flat panel display devices which are widely used at present, the liquid crystal display device and the organic light emitting display device are representative.

The liquid crystal display is composed of two glass substrates on which electrodes are formed and a liquid crystal layer interposed therebetween, and controls the amount of light transmitted by applying a voltage to the electrodes to rearrange the liquid crystal molecules of the liquid crystal layer. The main form is to do.

In addition, the organic light emitting diode display includes a hole injection electrode (anode), an electron injection electrode (cathode), and an organic light emitting layer formed therebetween, and holes injected from the anode and electrons injected from the cathode are recombined in the organic light emitting layer. It is a self-luminous display device that emits light while disappearing.

By the way, the glass substrate used in such a liquid crystal display device or an organic light emitting display element has a large weight and is easily broken by an external small impact, thereby limiting portability and large screen display characteristics.

Therefore, recently, a plastic display device or an organic light emitting display device having light weight, impact resistance, and flexible characteristics has been developed.

The display devices may have many advantages over conventional glass substrates in terms of portability, safety, and light weight by using flexible plastics instead of conventional glass substrates. In addition, in terms of process, the plastic substrate can be manufactured by deposition or printing, thereby lowering the manufacturing cost, and, unlike the conventional sheet-based process, a roll-to-roll process Since the display device can be manufactured, a low cost display device can be manufactured through mass production.

However, since the plastic substrate itself has flexible characteristics, there is a problem in that the processes applied to the existing glass substrate cannot be equally applied. In particular, in a subsequent process, since a plurality of laminated structures including a metal layer are formed on the plastic substrate, a defect in which the flexible substrate itself is bent or deformed may occur.

Therefore, recently, in order to overcome the above problem, an inorganic film such as silicon nitride (SiNx) is formed as a substrate protective film on the upper or lower portion of the plastic substrate so that the substrate is not bent in a subsequent process and remains flat.

However, since such an inorganic film formed to protect the substrate rather increases the stress of the plastic substrate, the film may be lifted or lifted up, and moreover, a high temperature deposition process is required when forming the inorganic film on the plastic substrate. There is a problem that the plastic substrate is bent or deformed by heat.

Accordingly, an object of the present invention is to provide a flexible display device and a method of manufacturing the same, including a substrate protective layer capable of sufficiently performing a function of protecting a plastic substrate without stressing the plastic substrate. The purpose.

The present invention is characterized by improving the mechanical, thermal and chemical resistance properties of a plastic substrate by forming a parylene compound as a substrate protective film on the plastic substrate.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a portion of a layer, film, region, plate, etc. is said to be "on top" of another part, this includes not only when the other part is "right over" but also when there is another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Hereinafter, a method of manufacturing a display panel or an organic light emitting display device for a liquid crystal display using a plastic substrate according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Example 1

In this embodiment, a case where a plastic substrate is used as the substrate of the thin film transistor array panel in the liquid crystal display device will be described with reference to FIGS. 1 to 8.

1 is a layout view illustrating a structure of a thin film transistor array panel for a liquid crystal display according to an exemplary embodiment, and FIG. 2 is a cross-sectional view of the thin film transistor array panel of FIG. 1 taken along a line II-II ′.

First, the plastic substrate 110 is prepared. The plastic substrate 110 is made of one or two or more selected from polyacrylate, polyethylene ether phthalate, polyethylene naphthalate, polycarbonate, polyarylate, polyetherimide, polyether sulfone or polyimide. The above layers are formed by overlapping.

Next, as shown in FIG. 3, substrate protective films 111a and 111b made of perylene are formed on the lower and upper portions of the plastic substrate 110 by chemical vapor deposition (CVD). The substrate protective layers 111a and 111b are formed to have a thickness of 2 to 5 μm. The substrate protective layers 111a and 111b are preferably formed on both the lower and upper portions of the plastic substrate 110, but may be formed only on any one of the lower and upper portions of the substrate.

Perylene forming the substrate protective layers 111a and 111b functions as a barrier to prevent the passage of oxygen or moisture from the outside to maintain characteristics of the thin film transistor to be formed later, and to form various films formed on the thin film transistor. It supports the stress generated by the function to keep the substrate in a flat state without bending.

Particularly, since perylene has a very high chemical resistance against various kinds of chemical substances, fine pores or cracks are destroyed by chemicals such as developer or etching liquid which are used to form a laminated structure on the substrate in a subsequent process. Does not occur.

In addition, parylene has an advantage of performing a deposition process at a low temperature. In the process of forming the perylene on the plastic substrate 110, a dimer-type perylene compound is vaporized at a temperature of about 130 to 150 ℃ and then pyrolyzed at a temperature of about 630 to 670 ℃ monomer (monomer) Decomposing the perylene compound of the form, and the step of depositing the decomposition of the perylene compound in the vacuum chamber on the plastic substrate 110. As described above, the step of decomposing the perylene compound requires a relatively high temperature condition, but the step of depositing perylene on the plastic substrate 110 may be performed at room temperature because no temperature condition is required. Therefore, the problem that the plastic substrate 110 is bent or deformed by heat in the step of depositing perylene does not occur. This is a case where the plastic substrate is bent or deformed by a deposition process by placing the plastic substrate under a temperature condition of about 130 to 150 ° C. in the process of forming an inorganic film such as silicon nitride (SiNx) as a substrate protective film. Can be prepared.

The multilayer thin film elements may be sufficiently formed on the substrate protective layers 111a and 111b made of the perylene without an additional inorganic or organic protective layer.

Subsequently, a metal film such as sputtering is laminated on the substrate protective film 111b. Preferably, the metal film may be composed of a double layer of a lower metal film 125p and an upper metal film 125q made of another material, in which case the upper metal film 125q is made of an aluminum-based metal such as an Al-Nd alloy. It is preferably made to have a thickness of about 2,500Å. The Al-Nd sputtering target preferably contains 2 atm% Nd.

A photoresist is formed on the metal film by spin coating. Next, the photoresist is exposed to light in a wavelength range of 350 to 440 nm using a patterned mask, followed by a subsequent exposure heat treatment process at a temperature of 110 ° C. for about 90 seconds. In this case, the portion of the photoresist not exposed through the mask remains through a developing process to be described later, and the exposed photoresist portion is removed through the developing process.                     

Next, the photoresist is developed using a 0.05% KOH solution to form a photoresist pattern having an inverse tapered shape. That is, the unexposed portion of the photoresist becomes a photoresist pattern, and the exposed photoresist portion is removed to leave an empty space. After etching the metal film with the photoresist pattern, the photoresist pattern is removed. By the patterning, as shown in FIG. 4, a gate line 121 including a plurality of gate electrodes 124 is formed.

Next, as shown in FIG. 5, a three-layer film of a gate insulating film 140, intrinsic amorphous silicon and an impurity amorphous silicon layer is successively laminated thereon, and an impurity amorphous silicon layer and The intrinsic amorphous silicon layer is photo-etched to form an intrinsic semiconductor 150 including a plurality of impurity semiconductors 160. As the material of the gate insulating layer 140, silicon nitride (SiNx) is preferable, and the stacking temperature is preferably 130-150 ° C. and the thickness is about 2,000-5,000 Pa.

Next, a metal film made of aluminum (Al), aluminum alloy, molybdenum (Mo), molybdenum alloy, or chromium (Cr) is formed by sputtering. The metal film has a thickness of about 3000-3200 kPa, and the sputtering temperature is preferably about 150 ° C.

As shown in FIG. 6, the metal film is patterned to form a plurality of data lines 171 and a plurality of drain electrodes 175 including a plurality of source electrodes 173, respectively.

Subsequently, the portions of the impurity semiconductor 160 which are not covered by the data line 171 and the drain electrode 175 are removed, thereby completing the plurality of ohmic contacts 163 and 165. 150) expose the part. In order to stabilize the surface of the exposed portion of the intrinsic semiconductor 150, it is preferable to carry out the oxygen (O ₂ ) plasma.

Next, as shown in FIG. 7, after the protective film 180 is laminated and the photoresist film is coated thereon, the photoresist film is irradiated with light through a photomask and then developed. Thereafter, a plurality of contact holes 182, 185, and 189 are formed through an etching step such as an ashing process. The plurality of contact holes 182, 185, and 189 may be formed by dry etching, and the contact holes 182, 185, and 189 may be formed under etching conditions having substantially the same etching ratio with respect to the gate insulating layer 140 and the passivation layer 180.

Next, as shown in FIG. 8, the ITO or IZO films are respectively stacked by sputtering and photo-etched to form the plurality of pixel electrodes 901 and the plurality of contact assistants 906 and 908.

Example 2

In this embodiment, a case where a plastic substrate is used as the substrate of the color filter (CF) display panel in the liquid crystal display will be described with reference to FIGS. 9 to 12.

First, the plastic substrate 210 is prepared. The plastic substrate 210 is made of one or two or more of polyacrylate, polyethylene ether phthalate, polyethylene naphthalate, polycarbonate, polyarylate, polyetherimide, polyether sulfone or polyimide, and two or more layers. Form by overlapping.                     

Next, as shown in FIG. 9, substrate protective films 211a and 211b made of perylene are formed on the lower and upper portions of the plastic substrate 210 by chemical vapor deposition. The substrate protective films 211a and 211b are preferably formed to have a thickness of 2 to 5 μm. The substrate protective films 211a and 211b are preferably formed on both the lower and upper portions of the plastic substrate 210, but may be formed only on any one of the lower and upper portions.

The perylene forming the substrate protective films 211a and 211b functions as a barrier to prevent the passage of oxygen or moisture from the outside to maintain the characteristics of the color filter to be formed later.

In particular, since perylene has a very high chemical resistance against various kinds of chemicals, no breakdown or fine pores or cracks are generated by the developer or etching solution used in subsequent processes.

In addition, parylene has an advantage of performing a deposition process at a low temperature. In the process of forming the perylene on the plastic substrate 210, a dimer-type perylene compound is vaporized at a temperature of about 130 to 150 ℃ and then pyrolyzed at a temperature of about 630 to 670 ℃ monomer (monomer) Decomposing the perylene compound of the form and the step of depositing the decomposition of the perylene compound in the vacuum chamber on the plastic substrate 210. As described above, the step of decomposing the perylene compound requires a relatively high temperature condition, but the step of depositing perylene on the plastic substrate 210 may be performed at room temperature because no temperature condition is required. Therefore, the problem that the plastic substrate 210 is bent or deformed by heat in the step of depositing perylene does not occur. This is because the plastic substrate is placed under a temperature condition of about 130 to 150 ° C. in the process of forming an inorganic film such as silicon nitride (SiNx) as a substrate protective film. Contrast with that.

The multilayer thin film elements including the metal layer may be formed on the substrate protective layers 211a and 211b made of the perylene without an additional inorganic or organic protective layer.

 Next, a black matrix layer 220 made of an opaque metal such as carbon black, iron oxide, chromium-iron-nickel oxide, etc. is formed on the substrate protective film 211b. The black matrix layer 220 is preferably formed to a thickness of 2 to 4㎛.

A photoresist is then formed on the black matrix layer by spin coating. In this case, a negative photoresist is preferably used. Subsequently, the photoresist is exposed to light in a wavelength range of 350 to 440 nm using a patterned mask, followed by a subsequent exposure heat treatment process at a temperature of 110 ° C. for about 90 seconds. In this case, the negative photoresist portions exposed through the mask remain through the developing process described below, and the unexposed negative photoresist portions are removed through the developing process. Next, the negative photoresist is developed using a 2.38% TMAH solution to form a photoresist pattern having a reverse tapered shape. That is, the exposed negative photoresist portion becomes a photoresist pattern, and the unexposed negative photoresist portion is removed to leave an empty space.

Next, as shown in FIG. 10, the black matrix layer 220 is patterned using the photoresist.

Next, as shown in FIG. 11, red, green, and blue color filters 230R, 230G, and 230B are sequentially formed between the plurality of black matrices 220 separated at predetermined intervals. At this time, the red, green and blue color filters are separated from each other, and their edges form up to the edges of the neighboring black matrix.

Subsequently, the surface of the black matrix 220 and the red, green, and blue color filters 230R, 230G, and 230B are irradiated with ultraviolet rays and infrared rays in order to improve the adhesion to the ITO film formed later. . At this time, the infrared surface treatment is a process of preheating before performing the ultraviolet surface treatment, at which time moisture and gaseous components remaining in the red, green, and blue color filters 230R, 230G, and 230B are removed. In addition, the ultraviolet surface treatment is performed by injecting high concentrations of ozone (O ₃ ) molecules into the ultraviolet chamber, wherein the oxygen atoms or molecules of the injected ozone are red, green and blue color filters 230R, 230G, 230B or Organic matter remaining on the surface of the black matrix 220 is decomposed.

Next, as shown in FIG. 12, a common electrode 270 made of ITO or IZO is formed on the substrate on which the red, green, and blue color filters 230R, 230G, 230B, and the black matrix 220 are formed. To form a color filter display panel. At this time, the common electrode 270 is formed to a thickness of 500 to 2500Å.

Example 3                     

In this embodiment, a case where a plastic substrate is used as a substrate of an organic light emitting display element, which is one of flat panel display elements, will be described.

FIG. 13 is a layout view of a thin film transistor array panel for an organic light emitting diode display, and FIG. 14 is a cross-sectional view taken along the line XIV-XIV ′ of FIG. 13.

First, the plastic substrate 110 is prepared. The plastic substrate 110 is made of one or two or more of polyacrylate, polyethylene ether phthalate, polyethylene naphthalate, polycarbonate, polyarylate, polyetherimide, polyether sulfone or polyimide, and two or more layers. Form by overlapping.

Subsequently, as shown in FIG. 15, substrate protective films 111a and 111b made of perylene are formed on the lower and upper portions of the plastic substrate 110 by chemical vapor deposition. The substrate protective films 111a and 111b are preferably formed to have a thickness of 2 to 5 μm. The substrate protective layers 111a and 111b are preferably formed at both the lower and upper portions of the plastic substrate 110, but may be formed only at any one of the lower and upper portions.

Perylene forming the substrate protective layers 111a and 111b functions as a barrier to prevent the passage of oxygen or moisture from the outside to maintain characteristics of the thin film transistor to be formed later, and to form various films formed on the thin film transistor. It supports the stress generated by the function to keep the substrate in a flat state without bending.

Particularly, since perylene has a very high chemical resistance against various kinds of chemicals, holes or cracks or are destroyed by chemicals such as developer or etchant used to form a laminated structure on the substrate in a subsequent process. This does not happen.

In addition, parylene has an advantage of performing a deposition process at a low temperature. In the process of forming the perylene on the plastic substrate 110, a dimer-type perylene compound is vaporized at a temperature of about 130 to 150 ℃ and then pyrolyzed at a temperature of about 630 to 670 ℃ monomer (monomer) Decomposing the perylene compound of the form and the step of depositing the decomposition of the perylene compound in the vacuum chamber on the plastic substrate 110. As described above, the step of decomposing the perylene compound requires a relatively high temperature condition, but the step of depositing perylene on the plastic substrate 110 may be performed at room temperature because no temperature condition is required. Therefore, the problem that the plastic substrate 110 is bent or deformed by heat in the step of depositing perylene does not occur. This is because the plastic substrate is placed under a temperature condition of about 130 to 150 ° C. in the process of forming an inorganic film such as silicon nitride (SiNx) as a substrate protective film. Contrast with that.

The multilayer thin film elements including the metal layer may be sufficiently formed on the substrate protective layers 111a and 111b made of the perylene without additional inorganic or organic protective layers.

 Next, a metal film is deposited on the substrate protective film 111b by sputtering. Preferably, the metal film may be composed of a double layer made of another material.

The film is formed by spin coating a photoresist on the metal film.

Next, the photoresist is exposed to light in a wavelength range of 350 to 440 nm using a patterned mask, followed by a subsequent exposure heat treatment process at a temperature of 110 ° C. for about 90 seconds. In this case, the portion of the photoresist not exposed through the mask remains through the developing process described later, and the portion of the exposed photoresist film is removed through the developing process. Next, the photoresist is developed using a 0.05% KOH solution to form a photoresist pattern having an inverse tapered shape. That is, the unexposed portion of the photoresist becomes a photoresist pattern, and the exposed photoresist portion is removed to leave an empty space. After etching the metal film with the photoresist pattern, the photoresist pattern is removed.

By the patterning, as shown in FIG. 16, the gate line 121 including the first gate electrode 124a, the second gate electrode 124b, and the storage electrode 133 are formed.

Then, as shown in FIG. 17, three layers of a gate insulating film 140, intrinsic amorphous silicon, and an impurity amorphous silicon layer are successively stacked, and an impurity amorphous silicon layer and The intrinsic amorphous silicon layer is photo-etched to form a plurality of linear impurity semiconductors 164 and a plurality of intrinsic semiconductor layers 154a and 154b. As the material of the gate insulating layer 140, silicon nitride is preferable, and the stacking temperature is preferably 130-150 ° C. and the thickness is about 2,000-5,000 kPa.

Next, a metal film made of aluminum (Al), aluminum alloy, molybdenum (Mo), molybdenum alloy, or chromium (Cr) is formed by sputtering. The metal film has a thickness of about 3000-3200 kPa, and the sputtering temperature is preferably about 150 ° C.

 A photoresist is formed on the metal layer and patterned using an etch mask. As shown in FIG. 18, a plurality of data lines 171 and a plurality of drain electrodes 175a each including a plurality of source electrodes 173a are formed. Form.

Subsequently, the portions of the impurity semiconductor 164 that are not covered by the data line 171 and the drain electrode 175a are removed to complete the plurality of linear ohmic contacts 161 and the plurality of island type ohmic contacts 165a. On the other hand, portions of intrinsic semiconductors 151 and 154b beneath it are exposed. In order to stabilize the surface of the exposed portions of the intrinsic semiconductors 151 and 154b, it is preferable to carry out oxygen plasma following.

Next, as shown in FIG. 19, after the protective film 180 is laminated and the photoresist film is coated thereon, the photoresist film is irradiated with light through a photomask and then developed. Thereafter, a plurality of contact holes 181 and 183 are formed through an etching step such as an ashing process. The removal of the portion is performed by dry etching, and the etching may be performed on the gate insulating layer 140 and the passivation layer 180 under etching conditions having substantially the same etching ratio.

Next, as shown in FIG. 20, the ITO or IZO films are stacked by sputtering, respectively, and photo-etched to form pixel electrodes 901 and 902.

Next, as shown in FIG. 21, a barrier rib 803 is formed of an organic insulating material or an inorganic insulating material to separate the organic light emitting cells. The partition wall 803 surrounds the edge of the pixel electrode 901 to define a region in which the organic emission layer 70 is to be filled. After the auxiliary electrode 272 is formed on the barrier rib 803 by sputtering, the barrier rib 803 and the auxiliary electrode 272 are patterned by a photolithography process using a single mask.

Next, as shown in FIG. 29, the organic light emitting layer 70 is formed in an area on the pixel electrode 901 surrounded by the partition 803. The organic light emitting layer 70 is formed of an organic material emitting one of red, green, and blue light, and the red, green, and blue organic light emitting layers 70 are repeatedly arranged in order.

Finally, a common electrode 270 made of ITO or IZO is formed on the barrier rib 803, the organic emission layer 70, and the auxiliary electrode 272.

Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

As described above, the perylene compound formed on at least one of the upper part and the lower part of the plastic substrate blocks oxygen or moisture introduced from the outside and is not destroyed by various types of developer or etching solution used in forming the subsequent laminated structure. It has a strong chemical resistance and can be prevented from bending or deforming the plastic substrate because it can be deposited in a state in which the plastic substrate is placed at room temperature during the deposition process.

Claims (13)

Plastic substrates; A substrate protective film made of perylene formed on at least one of an upper portion and a lower portion of the plastic substrate; A flexible display device comprising multiple thin film elements formed on the substrate protective layer. The flexible substrate of claim 1, wherein the plastic substrate is made of one or two or more selected from polyacrylate, polyethylene ether phthalate, polyethylene naphthalate, polycarbonate, polyarylate, polyetherimide, polyether sulfone, or polyimide. Display device. The flexible display device of claim 1, wherein the parylene has a thickness of about 2 μm to about 5 μm. The thin film device of claim 1, wherein the multilayer thin film device is formed on a gate line including a gate electrode, a gate insulating film formed on the gate line, a semiconductor layer formed on a predetermined region on the gate insulating film, and formed on the gate insulating film and the semiconductor layer. And a data line including a source electrode, a drain electrode facing the source electrode at a predetermined interval, a passivation layer formed on the data line and the drain electrode and having a contact hole, and a pixel connected to the drain electrode through the contact hole. Flexible display device comprising an electrode. The flexible display device of claim 1, wherein the multilayer thin film device comprises a black matrix, a color filter, and a common electrode. The thin film device of claim 1, wherein the multilayer thin film device includes first and second semiconductors having first and second channel portions, a gate line having a first gate electrode overlapping the first channel portion, and overlapping with the second channel portion. A second gate electrode, a gate insulating film formed between the first and second gate electrodes and the first and second semiconductors, a data line in contact with the first semiconductor and having a first source electrode, and the first channel portion A first drain electrode in contact with the second gate electrode, a power source voltage electrode in contact with the second channel portion, and having a second source electrode, a second drain electrode facing the second source electrode, and the second A pixel electrode connected to the drain electrode, a partition having an opening exposing the pixel electrode, an auxiliary electrode formed on the partition wall, and an opening formed on the pixel electrode. Flexible display comprising a common electrode covering the light emitting layer group, the auxiliary electrode and the organic light-emitting layer. Preparing a plastic substrate; Depositing a perylene compound on at least one of the upper and lower portions of the plastic substrate; Forming a multi-layered thin film element on the perylene compound. The method of claim 7, wherein the plastic substrate is formed of one or two or more selected from polyacrylate, polyethylene ether phthalate, polyethylene naphthalate, polycarbonate, polyarylate, polyetherimide, polyether sulfone or polyimide. A method of manufacturing a flexible display device. The method of claim 7, wherein the perylene compound is deposited at room temperature. The flexible display device of claim 7, wherein the perylene compound has a thickness of about 2 μm to about 5 μm. The method of claim 7, wherein the forming of the multilayer thin film device comprises sequentially stacking a gate line, an insulating layer, a semiconductor layer, and an ohmic contact layer, etching and patterning the semiconductor layer and the ohmic contact layer, and the insulating layer and the resistive layer. Forming a passivation layer including a data line including a source electrode on the contact layer and a drain electrode facing the source electrode at a predetermined interval, and forming a passivation layer on the data line to expose the drain electrode; And forming a pixel electrode connected to the drain electrode through the contact hole on the passivation layer. The method of claim 7, wherein the forming of the multilayer thin film device comprises: forming a plurality of black matrices separated at predetermined intervals, sequentially forming red, green, and blue color filters between the plurality of black matrices; A method of manufacturing a flexible display device, the method comprising forming a common electrode on a matrix and a color filter. The method of claim 7, wherein the forming of the multilayer thin film device comprises forming a gate line and a second gate electrode having the first gate electrode, and forming a first and second semiconductor layer on the gate line and the second gate electrode. Forming a gate insulating film between the gate line and the second gate electrode and the first and second semiconductor layers; first and second source electrodes, data lines, first and second layers on the gate insulating film Forming a second drain electrode, an electrode for a power supply voltage, forming an interlayer insulation film covering the first and second source electrodes, the data line, the first and second drain electrodes, and the power supply electrode; Forming a contact auxiliary member connected to the pixel electrode connected to the second drain electrode and the gate line and the data line, respectively, and forming an opening for exposing the pixel electrode; Forming an auxiliary electrode on the barrier rib, forming an organic emission layer on a predetermined region on the pixel electrode partitioned by the barrier rib, and forming a common electrode in contact with the auxiliary electrode and the organic emission layer Method of manufacturing a flexible display device comprising a.

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