JPH11297860A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPH11297860A
JPH11297860A JP10079129A JP7912998A JPH11297860A JP H11297860 A JPH11297860 A JP H11297860A JP 10079129 A JP10079129 A JP 10079129A JP 7912998 A JP7912998 A JP 7912998A JP H11297860 A JPH11297860 A JP H11297860A
Authority
JP
Japan
Prior art keywords
floating gate
voltage
gate
electrodes
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10079129A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11297860A5 (enExample
Inventor
Toshihiro Sasai
俊博 笹井
Yoichi Nakasone
陽一 仲宗根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEWCORE TECHNOL Inc
Original Assignee
NEWCORE TECHNOL Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEWCORE TECHNOL Inc filed Critical NEWCORE TECHNOL Inc
Priority to JP10079129A priority Critical patent/JPH11297860A/ja
Priority to US09/274,493 priority patent/US6128223A/en
Publication of JPH11297860A publication Critical patent/JPH11297860A/ja
Publication of JPH11297860A5 publication Critical patent/JPH11297860A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP10079129A 1998-03-26 1998-03-26 半導体記憶装置 Pending JPH11297860A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10079129A JPH11297860A (ja) 1998-03-26 1998-03-26 半導体記憶装置
US09/274,493 US6128223A (en) 1998-03-26 1999-03-23 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10079129A JPH11297860A (ja) 1998-03-26 1998-03-26 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH11297860A true JPH11297860A (ja) 1999-10-29
JPH11297860A5 JPH11297860A5 (enExample) 2005-07-21

Family

ID=13681348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10079129A Pending JPH11297860A (ja) 1998-03-26 1998-03-26 半導体記憶装置

Country Status (2)

Country Link
US (1) US6128223A (enExample)
JP (1) JPH11297860A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001210733A (ja) * 1999-12-22 2001-08-03 Hyundai Electronics Ind Co Ltd マルチレベルフラッシュｅｅｐｒｏｍセル及びその製造方法
JPWO2002071494A1 (ja) * 2001-03-01 2004-07-02 ヘイロ エルエスアイ デザインアンドディヴァイス テクノロジー インコーポレイテッド キャリアトラップサイトへのホットホール注入による不揮発性メモリの消去方法
JP2005347755A (ja) * 2004-06-02 2005-12-15 Macronix Internatl Co Ltd メモリーデバイスを操作する方法およびメモリーデバイス
JP2006517325A (ja) * 2003-01-21 2006-07-20 ザイコー，インコーポレーテッド フローティング・ゲート・アナログ電圧フィードバック回路

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7110298B2 (en) * 2004-07-20 2006-09-19 Sandisk Corporation Non-volatile system with program time control
US7327608B2 (en) * 2006-03-28 2008-02-05 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in programming method
US7330373B2 (en) * 2006-03-28 2008-02-12 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in memory system
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7835190B2 (en) * 2008-08-12 2010-11-16 Micron Technology, Inc. Methods of erase verification for a flash memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61105862A (ja) * 1984-10-30 1986-05-23 Toshiba Corp 半導体装置
US5338952A (en) * 1991-06-07 1994-08-16 Sharp Kabushiki Kaisha Non-volatile memory
US5414286A (en) * 1992-03-19 1995-05-09 Sharp Kabushiki Kaisha Nonvolatile memory, method of fabricating the same, and method of reading information from the same
DE69428658T2 (de) * 1993-11-30 2002-06-20 Kabushiki Kaisha Toshiba, Kawasaki Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001210733A (ja) * 1999-12-22 2001-08-03 Hyundai Electronics Ind Co Ltd マルチレベルフラッシュｅｅｐｒｏｍセル及びその製造方法
JPWO2002071494A1 (ja) * 2001-03-01 2004-07-02 ヘイロ エルエスアイ デザインアンドディヴァイス テクノロジー インコーポレイテッド キャリアトラップサイトへのホットホール注入による不揮発性メモリの消去方法
JP2006517325A (ja) * 2003-01-21 2006-07-20 ザイコー，インコーポレーテッド フローティング・ゲート・アナログ電圧フィードバック回路
JP2005347755A (ja) * 2004-06-02 2005-12-15 Macronix Internatl Co Ltd メモリーデバイスを操作する方法およびメモリーデバイス

Also Published As

Publication number Publication date
US6128223A (en) 2000-10-03

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