JPH11297504A - Electronic device - Google Patents
Electronic deviceInfo
- Publication number
- JPH11297504A JPH11297504A JP9954598A JP9954598A JPH11297504A JP H11297504 A JPH11297504 A JP H11297504A JP 9954598 A JP9954598 A JP 9954598A JP 9954598 A JP9954598 A JP 9954598A JP H11297504 A JPH11297504 A JP H11297504A
- Authority
- JP
- Japan
- Prior art keywords
- degaussing
- ptc element
- resistance
- heating
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子装置、特に、
ＰＴＣ素子を備えた電子装置に関する。The present invention relates to an electronic device, and more particularly, to an electronic device,
The present invention relates to an electronic device including a PTC element.
【０００２】[0002]
【従来の技術】ＢａＴｉＯ3系半導体材料からなるＰＴ
Ｃ素子は、キュリー温度以上で急激に高抵抗化するとい
う正の抵抗温度特性を有する。このため、従来より、こ
のＰＴＣ素子は、過電流保護やカラーテレビジョンの消
磁用として使用されている。このうち、カラーテレビジ
ョンの消磁用としてＰＴＣ素子を使用する場合には、図
３に示すように、消磁用ＰＴＣ素子２１に消磁コイル２
２を電気的に直列接続した状態で使用される。消磁用Ｐ
ＴＣ素子２１で減衰された過電流は消磁コイル２２に流
れ、交流消磁される。2. Description of the Related Art PT made of BaTiO 3 based semiconductor material
The C element has a positive resistance-temperature characteristic in which the resistance rapidly increases at or above the Curie temperature. For this reason, this PTC element has been conventionally used for overcurrent protection and degaussing of color television. Of these, when a PTC element is used for degaussing a color television, as shown in FIG.
2 are used in a state of being electrically connected in series. P for demagnetization
The overcurrent attenuated by the TC element 21 flows to the degaussing coil 22 and is subjected to AC degaussing.
【０００３】さらに、この消磁用ＰＴＣ素子２１に加熱
用ＰＴＣ素子２３を電気的に並列接続させることも行わ
れている。加熱用ＰＴＣ素子２３で発生した熱によっ
て、消磁用ＰＴＣ素子２１を加熱してより高温にさせる
ことで、消磁完了後の残留電流を消磁用ＰＴＣ素子２１
によって低減させるためである。Further, a heating PTC element 23 is electrically connected in parallel to the degaussing PTC element 21. By heating the degaussing PTC element 21 to a higher temperature by the heat generated by the heating PTC element 23, the residual current after the completion of the degaussing can be reduced.
It is for reducing by.
【０００４】[0004]
【発明が解決しようとする課題】ところで、従来の加熱
用ＰＴＣ素子２３は自身を高温まで発熱させる必要があ
り、キュリー温度を１５０℃程度に設定していた。この
ため、加熱用ＰＴＣ素子２３を構成するＢａＴｉＯ3系
半導体材料には必ず鉛が含まれていた。キュリー温度を
１２５℃以上にするには、バリウム（Ｂａ）を鉛で置換
する必要があるからである。しかしながら、近年の環境
意識の高揚から、鉛不使用の必要性が生じてきた。因み
に、消磁用ＰＴＣ素子２１のキュリー温度は５０℃程度
であり、消磁用ＰＴＣ素子２１を構成するＢａＴｉＯ3
系半導体材料には鉛を含有させる必要はない。However, the conventional heating PTC element 23 needs to heat itself to a high temperature, and the Curie temperature is set to about 150 ° C. Therefore, the BaTiO 3 -based semiconductor material constituting the heating PTC element 23 always contains lead. This is because barium (Ba) must be replaced with lead in order to increase the Curie temperature to 125 ° C. or higher. However, recent environmental awareness has raised the need for lead-free use. Incidentally, the Curie temperature of the degaussing PTC element 21 is about 50 ° C., and the BaTiO 3
It is not necessary for lead-based semiconductor materials to contain lead.
【０００５】そこで、本発明の目的は、鉛を含まないＰ
ＴＣ素子を備え、かつ、十分に残留電流を低減すること
ができる電子装置を提供をすることにある。Therefore, an object of the present invention is to provide a lead-free P
It is an object of the present invention to provide an electronic device including a TC element and capable of sufficiently reducing a residual current.
【０００６】[0006]
【課題を解決するための手段】以上の目的を達成するた
め、本発明に係る電子装置は、互いに熱的に結合しかつ
電気的に並列接続された少なくとも二つのＢａＴｉＯ3
系半導体材料からなるＰＴＣ素子を備え、前記二つのＰ
ＴＣ素子のうち一方のＰＴＣ素子の抵抗変化率α10-100
（％／℃）が、 ２≦α10-100≦１５ ただし、α10-100＝２３０×ｌｏｇ（１００／１０）／
（Ｔ100−Ｔ10） Ｔ100：抵抗が所定の抵抗値の１００倍になる温度 Ｔ10：抵抗が所定の抵抗値の１０倍になる温度 を満足していることを特徴とする。この電子装置は、例
えばカラーテレビジョンの消磁用装置として使用され
る。In order to achieve the above object, an electronic device according to the present invention comprises at least two BaTiO 3 layers thermally coupled to each other and electrically connected in parallel.
A PTC element made of a base semiconductor material.
Resistance change rate α 10-100 of one PTC element among TC elements
(% / ° C.) is 2 ≦ α 10-100 ≦ 15, where α 10-100 = 230 × log (100/10) /
(T 100 -T 10) T 100: Temperature T 10 resistance becomes 100 times the predetermined resistance: resistance characterized in that it satisfies the temperature at which 10 times the predetermined resistance value. This electronic device is used, for example, as a degaussing device for a color television.
【０００７】[0007]
【作用】以上の構成により、少なくとも二つのＰＴＣ素
子のうち一方のＰＴＣ素子の抵抗変化率α10-100が通常
よりかなり低くなる。この抵抗変化率が通常よりかなり
低いＰＴＣ素子を加熱用とし、前記二つのＰＴＣ素子を
熱結合させると、加熱用ＰＴＣ素子のＢａＴｉＯ3系半
導体材料に鉛が含まれていなくても、他方のＰＴＣ素子
は十分高温に加熱される。According to the above arrangement, the resistance change rate α10-100 of one of the at least two PTC elements is considerably lower than usual. When a PTC element having a resistance change rate much lower than usual is used for heating and the two PTC elements are thermally coupled, the other PTC element can be used even if the BaTiO 3 -based semiconductor material of the heating PTC element does not contain lead. The device is heated to a sufficiently high temperature.
【０００８】[0008]
【発明の実施の形態】以下、本発明に係る電子装置の実
施形態について添付図面を参照して説明する。本実施形
態では、カラーテレビジョンの消磁用装置を例にして説
明するが、本発明は必らずしもこれに限るものではな
い。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of an electronic device according to the present invention will be described with reference to the accompanying drawings. In the present embodiment, a degaussing device for a color television will be described as an example, but the present invention is not necessarily limited to this.
【０００９】図１は、カラーテレビジョンの消磁用装置
１０を示すものである。消磁用ＰＴＣ素子１は消磁コイ
ル３に電気的に直列接続している。消磁用ＰＴＣ素子１
で減衰された過電流は消磁コイル３に流れ、交流消磁さ
れる。さらに、消磁用ＰＴＣ素子１と消磁コイル３の直
列回路は、加熱用ＰＴＣ素子２と電気的に並列接続して
いる。消磁用ＰＴＣ素子１は、加熱用ＰＴＣ素子２と熱
的に結合しており、加熱用ＰＴＣ素子２で発生した熱に
よって加熱され、高温になる。これにより、消磁用ＰＴ
Ｃ素子１は、消磁完了後の残留電流を低減させることが
できる。FIG. 1 shows an apparatus 10 for degaussing a color television. The degaussing PTC element 1 is electrically connected to the degaussing coil 3 in series. PTC element for degaussing 1
The overcurrent attenuated by the above flows into the degaussing coil 3 and is demagnetized by AC. Further, the series circuit of the degaussing PTC element 1 and the degaussing coil 3 is electrically connected in parallel with the heating PTC element 2. The degaussing PTC element 1 is thermally coupled to the heating PTC element 2, and is heated by the heat generated by the heating PTC element 2 to a high temperature. With this, the degaussing PT
The C element 1 can reduce the residual current after the completion of the degaussing.
【００１０】図２は、図１に示した消磁用装置１０に使
用されるＰＴＣ素子１，２の一つの具体例を示す図であ
る。ＰＴＣ素子１，２は、直方体形状の素体１２を有
し、その両端部には外部電極１３，１４が設けられてい
る。素体１２はＢａＴｉＯ3系半導体材料からなる。つ
まり、消磁用ＰＴＣ素子１の原料として、ＢａＣ
Ｏ3、ＳｒＣＯ3、ＴｉＯ2、Ｓｍ2Ｏ3、ＳｉＯ2、Ｍｎを
次の組成となるように調合した。 原料：（Ｂａ0.698Ｓｒ0.30Ｓｍ0.002）ＴｉＯ3＋
０．００１Ｍｎ＋０．０１ＳｉＯ2 FIG. 2 is a diagram showing one specific example of the PTC elements 1 and 2 used in the degaussing device 10 shown in FIG. Each of the PTC elements 1 and 2 has a rectangular parallelepiped element body 12, and external electrodes 13 and 14 are provided at both ends. The element body 12 is made of a BaTiO 3 -based semiconductor material. That is, as a raw material of the degaussing PTC element 1, BaC
O 3 , SrCO 3 , TiO 2 , Sm 2 O 3 , SiO 2 , and Mn were prepared to have the following composition. Raw material: (Ba 0.698 Sr 0.30 Sm 0.002 ) TiO 3 +
0.001Mn + 0.01SiO 2
【００１１】同様に、加熱用ＰＴＣ素子２の原料とし
て、ＢａＣＯ3、ＴｉＯ2、Ｓｍ2Ｏ3、ＳｉＯ2、Ｍｎを
次の組成となるように調合した。 原料：（Ｂａ0.998Ｓｍ0.002）ＴｉＯ3＋ＸＭｎ＋
０．０１ＳｉＯ2 ここに、加熱用ＰＴＣ素子２は、Ｍｎ量Ｘを変えること
で、抵抗変化率α10-1 00（％／℃）を変化させることが
できる。Similarly, as raw materials of the heating PTC element 2, BaCO 3 , TiO 2 , Sm 2 O 3 , SiO 2 and Mn were prepared so as to have the following composition. Raw material: (Ba 0.998 Sm 0.002 ) TiO 3 + XMn +
0.01SiO 2 Here, the heating PTC element 2, by changing the Mn amount X, the resistance change ratio α 10-1 00 (% / ℃) can be changed.
【００１２】次に、これらの原料，をそれぞれ、ボ
ールミルで５時間混合、粉砕した。次に、これらの原料
，を、１１００℃の温度で２時間仮焼した後、バイ
ンダを加えて混合し、メッシュ５０＃のふるいで造粒し
た。この造粒粉を成形型に注入してプレス成形した後、
１３５０℃の温度で２時間焼成し、ＰＴＣ素子１，２の
それぞれの素体１２を得た。さらに、この素体１２の両
端部に、スパッタリング法、真空蒸着法、塗布焼付け法
等の方法により、Ｎｉ，Ａｇ，Ｃｕ，Ａｇ−Ｐｄ等から
なる外部電極１３，１４が形成される。Next, these raw materials were mixed and pulverized in a ball mill for 5 hours. Next, after calcining these raw materials at a temperature of 1100 ° C. for 2 hours, a binder was added and mixed, and the mixture was granulated with a mesh 50 # sieve. After injecting this granulated powder into a mold and press molding,
It was fired at a temperature of 1350 ° C. for 2 hours to obtain the respective element bodies 12 of the PTC elements 1 and 2. Further, external electrodes 13 and 14 made of Ni, Ag, Cu, Ag-Pd or the like are formed on both ends of the element body 12 by a method such as a sputtering method, a vacuum evaporation method, and a coating and baking method.
【００１３】こうして得られた消磁用及び加熱用ＰＴＣ
素子１，２のうち、加熱用ＰＴＣ素子２の抵抗変化率α
10-100（％／℃）は、通常よりかなり低く設定され、条
件式２≦α10-100≦１５ ただし、α10-100＝２３０×ｌｏｇ（１００／１０）／
（Ｔ100−Ｔ10） Ｔ100：抵抗が標準抵抗値（例えば、室温（２０℃）で
の抵抗値）の１００倍になる温度 Ｔ10：抵抗が標準抵抗値の１０倍になる温度 を満足している。この条件を満足することにより、鉛を
含まないＰＴＣ素子１，２を備え、かつ、十分に残留電
流を低減することができる消磁用装置１０を得ることが
できる。The degaussing and heating PTC thus obtained
Resistance change rate α of heating PTC element 2 among elements 1 and 2
10-100 (% / ° C.) is set considerably lower than usual, and the conditional expression 2 ≦ α 10-100 ≦ 15, where α 10-100 = 230 × log (100/10) /
(T 100 −T 10 ) T 100 : Temperature at which the resistance becomes 100 times the standard resistance value (for example, the resistance value at room temperature (20 ° C.)) T 10 : Satisfies the temperature at which the resistance becomes 10 times the standard resistance value doing. By satisfying this condition, it is possible to obtain a degaussing device 10 including the PTC elements 1 and 2 containing no lead and capable of sufficiently reducing the residual current.
【００１４】表１は、Ｍｎ量Ｘを種々変更させることに
より、抵抗変化率α10-100が異なる加熱用ＰＴＣ素子２
の試料を作成し、その抵抗変化率α10-100に対する消磁
用ＰＴＣ素子１の温度とその温度の変動を測定した結果
を示す表である。測定に使用した回路は、図１に示した
消磁用装置１０に１００Ｖの交流電源１５を接続した回
路である。Table 1 shows that heating PTC elements 2 having different resistance change rates α 10-100 by variously changing the Mn amount X.
5 is a table showing the results of measuring the temperature of the demagnetizing PTC element 1 and the fluctuation of the temperature with respect to the resistance change rate α 10-100 of the sample. The circuit used for the measurement is a circuit in which a 100 V AC power supply 15 is connected to the degaussing device 10 shown in FIG.
【００１５】[0015]
【表１】 [Table 1]
【００１６】表１において、「消磁用ＰＴＣ素子の温
度」は、消磁用装置１０に２４時間連続通電したときの
消磁用ＰＴＣ素子１の平均温度を意味している。また
「消磁用ＰＴＣ素子の温度変動」は、消磁用装置１０に
２４時間連続通電したときの消磁用ＰＴＣ素子１の最高
温度と最低温度を意味している。なお、前述のように、
加熱用ＰＴＣ素子２の抵抗変化率α10-100はＭｎ量Ｘで
制御したが、加熱用ＰＴＣ素子２の厚みを一定に保った
まま、抵抗変化率α10-100を小さくすると、交流電源１
５から供給される電圧によって加熱用ＰＴＣ素子２が破
壊される心配がある。そこで、加熱用ＰＴＣ素子２の耐
電圧がすべての試料において略２００Ｖになるように、
加熱用ＰＴＣ素子２の厚みを調整した。In Table 1, "temperature of the degaussing PTC element" means the average temperature of the degaussing PTC element 1 when the degaussing device 10 is continuously energized for 24 hours. The “temperature fluctuation of the degaussing PTC element” means the maximum temperature and the minimum temperature of the degaussing PTC element 1 when the degaussing device 10 is continuously energized for 24 hours. As mentioned above,
Although the resistance change rate α 10-100 of the heating PTC element 2 was controlled by the Mn amount X, if the resistance change rate α 10-100 was reduced while the thickness of the heating PTC element 2 was kept constant, the AC power supply 1
There is a concern that the heating PTC element 2 is destroyed by the voltage supplied from 5. Therefore, the withstand voltage of the heating PTC element 2 is set to approximately 200 V in all the samples.
The thickness of the heating PTC element 2 was adjusted.
【００１７】表１より、加熱用ＰＴＣ素子２の抵抗変化
率α10-100が、２≦α10-100≦１５の場合には、加熱用
ＰＴＣ素子２は、ＢａＴｉＯ3系半導体材料に鉛を含ま
なくても、消磁用ＰＴＣ素子１を十分高温（１５０〜２
００℃）に加熱することができる。しかも、その加熱温
度の変動を小さく抑えることができる。ところが、抵抗
変化率α10-100が２％／℃より小さい場合には、消磁用
ＰＴＣ素子１を高温に加熱することができるが、加熱温
度の変動が大きく実用上問題となる。一方、抵抗変化率
α10-100が１５％／℃より大きくなると、消磁用ＰＴＣ
素子１を１５０℃より低い温度にしか加熱することがで
きない。このため、消磁用ＰＴＣ素子１の消磁効果が低
下する。From Table 1, when the resistance change rate α 10-100 of the heating PTC element 2 is 2 ≦ α 10-100 ≦ 15, the heating PTC element 2 is made of a BaTiO 3 based semiconductor material containing lead. Even if not included, the degaussing PTC element 1 is kept at a sufficiently high temperature (150 to 2
00 ° C.). In addition, fluctuations in the heating temperature can be kept small. However, if the resistance change rate α 10-100 is smaller than 2% / ° C., the degaussing PTC element 1 can be heated to a high temperature, but the heating temperature fluctuates greatly and poses a practical problem. On the other hand, if the resistance change rate α 10-100 is larger than 15% / ° C., the degaussing PTC
Element 1 can only be heated to a temperature lower than 150 ° C. For this reason, the degaussing effect of the degaussing PTC element 1 is reduced.
【００１８】なお、本発明に係る電子装置は前記実施形
態に限定するものではなく、その要旨の範囲内で種々に
変更することができる。特に、ＰＴＣ素子は仕様により
種々の形状のものが選択される。The electronic device according to the present invention is not limited to the above embodiment, and can be variously modified within the scope of the invention. In particular, PTC elements of various shapes are selected according to specifications.
【００１９】[0019]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、少なくとも二つのＰＴＣ素子のうち一方のＰＴ
Ｃ素子の抵抗変化率α10-100（％／℃）が、条件式２≦
α10-1 00≦１５を満足するように設定したので、このＰ
ＴＣ素子の抵抗変化率は通常よりかなり低くなる。この
抵抗変化率の低いＰＴＣ素子を加熱用ＰＴＣ素子として
用いると、加熱用ＰＴＣ素子のＢａＴｉＯ3系半導体材
料に鉛が含まれていなくても、他方のＰＴＣ素子を十分
高温に加熱することができる。この結果、鉛を含まない
ＰＴＣ素子を備え、かつ、十分に残留電流を低減するこ
とができる電子装置を得ることができる。As is apparent from the above description, according to the present invention, one of at least two PTC elements
When the resistance change rate α 10-100 (% / ° C.) of the C element is less than the conditional expression 2 ≦
α 10-1 00 ≦ 15, so that this P
The resistance change rate of the TC element becomes considerably lower than usual. When the PTC element having a low rate of change in resistance is used as a heating PTC element, the other PTC element can be heated to a sufficiently high temperature even if the BaTiO 3 -based semiconductor material of the heating PTC element does not contain lead. . As a result, it is possible to obtain an electronic device including a PTC element that does not contain lead and capable of sufficiently reducing the residual current.
【図１】本発明に係る電子装置を示す電気回路図。FIG. 1 is an electric circuit diagram showing an electronic device according to the present invention.
【図２】図１に示した電子装置に使用されるＰＴＣ素子
の一例を示す外観斜視図。FIG. 2 is an external perspective view showing an example of a PTC element used in the electronic device shown in FIG.
【図３】従来の電子装置を示す電気回路図。FIG. 3 is an electric circuit diagram showing a conventional electronic device.
１…消磁用ＰＴＣ素子 ２…加熱用ＰＴＣ素子 ３…消磁コイル １０…消磁用装置 DESCRIPTION OF SYMBOLS 1 ... PTC element for degaussing 2 ... PTC element for heating 3 ... Degaussing coil 10 ... Device for degaussing
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０５Ｂ 3/14 Ｈ０５Ｂ 3/14 Ａ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI H05B 3/14 H05B 3/14 A
Claims (2)
続された少なくとも二つのＢａＴｉＯ3系半導体材料か
らなるＰＴＣ素子を備え、前記二つのＰＴＣ素子のうち
一方のＰＴＣ素子の抵抗変化率α10-100（％／℃）が、 ２≦α10-100≦１５ ただし、α10-100＝２３０×ｌｏｇ（１００／１０）／
（Ｔ100−Ｔ10） Ｔ100：抵抗が所定の抵抗値の１００倍になる温度 Ｔ10：抵抗が所定の抵抗値の１０倍になる温度 を満足していることを特徴とする電子装置。1. A semiconductor device comprising: at least two PTC elements made of a BaTiO 3 -based semiconductor material thermally coupled to each other and electrically connected in parallel; and a resistance change rate α of one of the two PTC elements. 10-100 (% / ° C), 2 ≦ α 10-100 ≦ 15, where α 10-100 = 230 × log (100/10) /
(T 100 -T 10) T 100: Temperature T 10 resistance becomes 100 times the predetermined resistance: resistance electronic device characterized in that it satisfies the temperature at which 10 times the predetermined resistance value.
使用されることを特徴とする請求項１記載の電子装置。2. The electronic device according to claim 1, wherein the electronic device is used as a degaussing device for a color television.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9954598A JPH11297504A (en) | 1998-04-10 | 1998-04-10 | Electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9954598A JPH11297504A (en) | 1998-04-10 | 1998-04-10 | Electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11297504A true JPH11297504A (en) | 1999-10-29 |
Family
ID=14250162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9954598A Pending JPH11297504A (en) | 1998-04-10 | 1998-04-10 | Electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11297504A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002047093A3 (en) * | 2000-12-05 | 2003-02-20 | Murata Manufacturing Co | Positive temperature coefficient thermistor |
| WO2008025348A1 (en) * | 2006-09-01 | 2008-03-06 | Epcos Ag | Heating element |
| EP3577662B1 (en) | 2017-02-01 | 2022-08-17 | TDK Electronics AG | Ptc heater with reduced switch-on current |
-
1998
- 1998-04-10 JP JP9954598A patent/JPH11297504A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002047093A3 (en) * | 2000-12-05 | 2003-02-20 | Murata Manufacturing Co | Positive temperature coefficient thermistor |
| WO2008025348A1 (en) * | 2006-09-01 | 2008-03-06 | Epcos Ag | Heating element |
| JP2010501988A (en) * | 2006-09-01 | 2010-01-21 | エプコス アクチエンゲゼルシャフト | Heating element |
| US8373100B2 (en) | 2006-09-01 | 2013-02-12 | Epcos Ag | Heating element |
| KR101465809B1 (en) * | 2006-09-01 | 2014-11-26 | 에프코스 아게 | Heating element |
| EP3577662B1 (en) | 2017-02-01 | 2022-08-17 | TDK Electronics AG | Ptc heater with reduced switch-on current |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3202746A1 (en) | Semiconductor ceramic composition and ptc thermistor | |
| US3619703A (en) | Degaussing device having series connected ptc and ntc resistors | |
| KR20170016805A (en) | Semiconductive ceramic composition and ptc thermistor | |
| JPH11297504A (en) | Electronic device | |
| JP3554786B2 (en) | Semiconductor ceramic, degaussing positive temperature coefficient thermistor, degaussing circuit, and method of manufacturing semiconductor ceramic | |
| US5733833A (en) | Semiconductive ceramic | |
| JPH05198405A (en) | Barium titanate based semiconductor porcelain composition | |
| US3991340A (en) | Discharge lamp lighting apparatus including a sintered type oxide negative resistance starting element | |
| JPH05198406A (en) | Barium titanate based semiconductor porcelain composition | |
| JPH07220902A (en) | Barium titanate semiconductor ceramic | |
| JPH06302402A (en) | Positive temperature coefficient thermistor | |
| JPH01143201A (en) | Variable positive temperature coefficient resistance(ptcr) element | |
| JPH04329601A (en) | Ptc thermistor | |
| JP2540048B2 (en) | Voltage nonlinear resistor porcelain composition | |
| JP2940182B2 (en) | Method for manufacturing semiconductor porcelain having positive temperature coefficient of resistance | |
| JPH04144201A (en) | Positive temperature coefficient thermistor and manufacture thereof | |
| JP2990626B2 (en) | Varistor manufacturing method | |
| JPH10294203A (en) | Method for manufacturing positive temperature coefficient thermistor | |
| JPH06215905A (en) | Positive characteristic thermistor element for demagnetization | |
| KR100246298B1 (en) | Semiconductive Ceramic | |
| JPH0677005A (en) | Barium titanate semiconductor porcelain composition | |
| JPH05291630A (en) | Titanic acid barium semiconductor porcelain material and its manufacture | |
| JPH1070007A (en) | Manufacture of positive temperature coefficient thermistor | |
| JPH04177803A (en) | Positive characteristic thermistor and manufacture thereof | |
| JPH08151261A (en) | Semiconductor porcelain having positive resistance temperature characteristic |