JPH11265961A - Surface-mounting type wiring substrate for high frequency - Google Patents

Surface-mounting type wiring substrate for high frequency

Info

Publication number
JPH11265961A
JPH11265961A JP10066514A JP6651498A JPH11265961A JP H11265961 A JPH11265961 A JP H11265961A JP 10066514 A JP10066514 A JP 10066514A JP 6651498 A JP6651498 A JP 6651498A JP H11265961 A JPH11265961 A JP H11265961A
Authority
JP
Japan
Prior art keywords
frequency
transmission line
frequency transmission
insulating base
electric circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10066514A
Other languages
Japanese (ja)
Inventor
Mikio Fujii
幹男 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP10066514A priority Critical patent/JPH11265961A/en
Publication of JPH11265961A publication Critical patent/JPH11265961A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/0243Printed circuits associated with mounted high frequency components

Landscapes

  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

PROBLEM TO BE SOLVED: To enhance the junction reliability without adverse effects on the high-frequency characteristics by increasing the junction area of a wiring substrate and an external electric circuit substrate and increasing the junction strength without imparting the electric adverse effects on the high-frequency signal, which is transmitted on a high-frequency transmission path. SOLUTION: A mounting part 21a, on which a semiconductor element for high frequencies is mounted, is formed in an insulating base body 21 comprising ceramics. At the same time, a high-frequency transmitting path 22, which is guided out from the vicinity of the mounting part 21a to the lower surface of the insulating base body 21, is formed. The end part of the path is connected to the wiring conductor at the surface of the external electric circuit substrate through a conductive connecting member. In this high-frequency surface mounting type wiring substrate, a reinforcing pad 23, which reinforces the junction with the external electric circuit substrate, is formed at the position, which is separated by 1.5 mm or more from the high-frequency transmission part 32 at the lower surface of the insulating base body 21. The junction strength can be enhanced with the external electric circuit substrate without deteriorating the high frequency characteristics, the substrate is suitable for the high-frequency semiconductor device and connecting reliability becomes high.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、マイクロ波やミリ
波等の高周波を用いた通信機器あるいはセンサ等に使用
される表面実装型の高周波用半導体素子収納用パッケー
ジあるいは高周波用半導体装置に好適な高周波用表面実
装型配線基板に関し、特に外部電気回路基板との接続信
頼性を改善した高周波用表面実装型配線基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is suitable for a surface-mounted type high-frequency semiconductor element storage package or high-frequency semiconductor device used for communication equipment or sensors using high frequencies such as microwaves and millimeter waves. The present invention relates to a high-frequency surface-mounted wiring board, and more particularly to a high-frequency surface-mounted wiring board having improved connection reliability with an external electric circuit board.

【0002】[0002]

【従来の技術】マイクロ波やミリ波等の高周波信号を取
り扱う高周波回路素子等の高周波用半導体素子を搭載し
た高周波用半導体装置は、通常は、セラミックス等の誘
電体材料から成る絶縁基体に高周波用半導体素子が搭載
される搭載部とこの搭載部から絶縁基体の下面に導出さ
れた高周波用伝送線路が形成された表面実装型の高周波
用半導体素子収納用パッケージ内に高周波用半導体素子
を収容することにより構成されている。この高周波用半
導体装置は、所定の外部電気回路基板の表面に搭載さ
れ、高周波用伝送線路もしくはその端部に形成された接
続端子と外部電気回路基板に形成された高周波用伝送線
路等の配線導体とを半田バンプ等の導電性接続部材によ
り電気的に接続されることにより、高周波用半導体素子
と外部電気回路基板との間で高周波信号の入出力が行な
われる。
2. Description of the Related Art A high-frequency semiconductor device equipped with a high-frequency semiconductor element such as a high-frequency circuit element for handling a high-frequency signal such as a microwave or a millimeter wave usually includes a high-frequency semiconductor substrate on an insulating base made of a dielectric material such as ceramics. A high-frequency semiconductor element is housed in a surface-mount type high-frequency semiconductor element housing package in which a mounting part on which a semiconductor element is mounted and a high-frequency transmission line led out from the mounting part to the lower surface of the insulating base are formed. It consists of. The high-frequency semiconductor device is mounted on a surface of a predetermined external electric circuit board, and a high-frequency transmission line or a connection terminal formed at an end thereof and a wiring conductor such as a high-frequency transmission line formed on the external electric circuit board. Are electrically connected to each other by a conductive connection member such as a solder bump, so that high-frequency signals are input and output between the high-frequency semiconductor element and the external electric circuit board.

【0003】このような高周波用半導体装置もしくは高
周波用半導体素子収納用パッケージに用いられる高周波
用表面実装型配線基板においては、高周波信号を劣化さ
せることなく信号を入出力することが可能なパッケージ
構造および高周波伝送線路等の配線構造についての設計
および製造の容易性と、外部電気回路基板に精度よく高
周波用半導体装置を実装する実装技術への対応の容易性
とが要求される。
A high-frequency surface-mounted wiring board used for such a high-frequency semiconductor device or a high-frequency semiconductor element housing package has a package structure capable of inputting and outputting signals without deteriorating high-frequency signals. It is required that the wiring structure such as a high-frequency transmission line be easily designed and manufactured, and that it be easy to cope with a mounting technology for accurately mounting a high-frequency semiconductor device on an external electric circuit board.

【0004】この種の高周波用半導体装置としては、例
えば図4に部分破断斜視図で示すようなものが用いられ
ていた。図4に示すように、従来の高周波用半導体装置
は、上面に高周波用半導体素子を搭載する搭載部として
のキャビティ1aが形成された誘電体材料から成る絶縁
基体1と、キャビティ1a近傍から絶縁基体1の端部に
かけて形成されたマイクロストリップ線路等の高周波用
伝送線路2とから成る配線基板に、キャビティ1aを取
り囲むように壁部材3を接合し、キャビティ1a内に高
周波用半導体素子4を搭載してその電極と高周波用伝送
線路2とをボンディングワイヤ5により接続し、壁部材
3の上面に蓋体(図示せず)を取着することにより高周
波用半導体素子4が内部に気密に封止されている。
As this type of high-frequency semiconductor device, for example, a device as shown in a partially broken perspective view in FIG. 4 has been used. As shown in FIG. 4, a conventional high-frequency semiconductor device includes an insulating base 1 made of a dielectric material having a cavity 1a as a mounting portion on which a high-frequency semiconductor element is mounted, and an insulating base 1 near the cavity 1a. A wall member 3 is joined to a wiring board composed of a microstrip line or other high-frequency transmission line 2 formed over the end of the cavity 1 so as to surround the cavity 1a, and the high-frequency semiconductor element 4 is mounted in the cavity 1a. The electrode and the high-frequency transmission line 2 are connected by a bonding wire 5 and a lid (not shown) is attached to the upper surface of the wall member 3 to hermetically seal the high-frequency semiconductor element 4 therein. ing.

【0005】そして、この高周波用半導体装置を外部電
気回路基板6の表面に設けられた凹部6aに搭載し、壁
部材3を通過してキャビティ1a外に引き出された高周
波用伝送線路2と外部電気回路基板6表面の配線導体7
とをワイヤボンディング8等の手段を用いて電気的に接
続することにより、高周波信号の入出力が行なわれてい
た。
The high-frequency semiconductor device is mounted in a recess 6a provided on the surface of the external electric circuit board 6, and the high-frequency transmission line 2 passing through the wall member 3 and drawn out of the cavity 1a is connected to the external electric circuit. Wiring conductor 7 on the surface of circuit board 6
Are electrically connected to each other using a means such as wire bonding 8 to input and output a high-frequency signal.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、図4に
示したような高周波用半導体装置では、外部電気回路基
板への表面実装は不可能なため、実装の高密度化を図る
ことができず、また実装のコストを下げることができな
い。
However, in the high-frequency semiconductor device as shown in FIG. 4, surface mounting on an external electric circuit board is impossible, so that high-density mounting cannot be achieved. Also, the cost of mounting cannot be reduced.

【0007】そこで、外部電気回路基板への高密度実装
ならびに実装コスト低減の要求に応えるために、配線基
板の絶縁基体下面に高周波用伝送線路を形成し、この高
周波用伝送線路の端部もしくは端部に形成された接続端
子を半田バンプ等の導電性接続部材により外部電気回路
基板表面の配線導体に直接接合する、表面実装型の高周
波用半導体装置が提案され用いられつつある。
Therefore, in order to meet the demand for high-density mounting on an external electric circuit board and reduction in mounting cost, a high-frequency transmission line is formed on the lower surface of the insulating base of the wiring board, and the end or end of the high-frequency transmission line is formed. A surface-mount type high-frequency semiconductor device in which a connection terminal formed in a portion is directly joined to a wiring conductor on the surface of an external electric circuit board by a conductive connection member such as a solder bump has been proposed and used.

【0008】このような表面実装型の高周波用半導体装
置においては、例えば図5に部分破断斜視図で示すよう
に、配線基板には絶縁基体11上面の搭載部としてのキャ
ビティ11a近傍から絶縁基体11の外周の側壁13付近まで
形成されたマイクロストリップ線路等の第1の高周波用
伝送線路12aと絶縁基体11の下面に形成されたマイクロ
ストリップ線路等の第2の高周波用伝送線路12bとを貫
通導体14で接続することにより、キャビティ11a近傍か
ら絶縁基体11の下面にかけて高周波用伝送線路を導出す
ることが行なわれていた。
In such a surface-mount type high-frequency semiconductor device, as shown in, for example, a partially cutaway perspective view in FIG. A first high-frequency transmission line 12a, such as a microstrip line, formed up to the vicinity of the side wall 13 on the outer periphery of the substrate and a second high-frequency transmission line 12b, such as a microstrip line formed on the lower surface of the insulating base 11, are penetrated by a through conductor. By connecting at 14, the high-frequency transmission line is led out from the vicinity of the cavity 11a to the lower surface of the insulating base 11.

【0009】そして、キャビティ11a内に搭載された高
周波用半導体素子15の電極と第1の高周波用伝送線路12
aとをボンディングワイヤ16により接続するとともに第
2の高周波用伝送線路12bと外部電気回路基板(図示せ
ず)表面の配線導体とを半田バンプ等の導電性接続部材
(図示せず)により接合することにより、この高周波用
半導体装置が外部電気回路基板に表面実装されていた。
The electrode of the high-frequency semiconductor element 15 mounted in the cavity 11a and the first high-frequency transmission line 12
is connected by a bonding wire 16, and the second high-frequency transmission line 12b and a wiring conductor on the surface of an external electric circuit board (not shown) are joined by a conductive connection member (not shown) such as a solder bump. As a result, the high-frequency semiconductor device has been surface-mounted on an external electric circuit board.

【0010】また、このような表面実装型の半導体装置
に用いられる配線基板においては、絶縁基体11の側面に
第2の高周波用伝送線路12bを延設して、高周波用半導
体装置と外部電気回路基板との半田等による接合を確実
にするための端面パターン17を設けることも行なわれて
いた。
In a wiring board used in such a surface-mount type semiconductor device, a second high-frequency transmission line 12b is extended on a side surface of an insulating base 11, so that the high-frequency semiconductor device and an external electric circuit are connected. An end face pattern 17 for ensuring bonding to a substrate by soldering or the like has also been provided.

【0011】しかしながら、高周波用半導体装置は一般
に外部電気回路基板との接続のための端子数が少なく、
しかも、上記従来の表面実装型の高周波用半導体装置を
表面実装する場合には、配線基板の絶縁基体11の下面に
形成された第2の高周波用伝送線路12bと外部電気回路
基板表面の配線導体との間の接合面積が小さいことから
絶縁基体11と外部電気回路基板との間の接合強度が十分
ではなく、そのため例えば温度サイクル等の信頼性試験
を行なうと、一般にセラミックス等からなる絶縁基体11
と一般に有機樹脂等からなる外部電気回路基板の熱膨張
係数が異なるために、高周波用伝送線路12bと配線導体
との接合部が短時間で破断してしまい十分な接続信頼性
が得られないという問題点があった。
However, a high frequency semiconductor device generally has a small number of terminals for connection to an external electric circuit board.
Moreover, when the conventional surface-mount type high-frequency semiconductor device is surface-mounted, the second high-frequency transmission line 12b formed on the lower surface of the insulating base 11 of the wiring board and the wiring conductor on the surface of the external electric circuit board are required. The bonding area between the insulating substrate 11 and the external electric circuit board is not sufficient due to the small bonding area between the insulating substrate 11 and the external electric circuit board.
Since the thermal expansion coefficient of the external electric circuit board generally made of organic resin or the like is different, the joint between the high-frequency transmission line 12b and the wiring conductor is broken in a short time, so that sufficient connection reliability cannot be obtained. There was a problem.

【0012】また、図5に示すように、配線基板に外部
電気回路基板との接合信頼性を確実にするための側面パ
ターン17を設けた場合には、その側面パターン17が高周
波回路におけるスタブとして機能するのでその部分で高
周波信号の反射が起こってしまい、高周波特性が悪化す
ることとなって10GHz以上の周波数帯で使用する高周
波用半導体装置には使用することができないという問題
点があった。
As shown in FIG. 5, when the wiring board is provided with a side pattern 17 for ensuring the reliability of bonding to an external electric circuit board, the side pattern 17 serves as a stub in a high-frequency circuit. Since it functions, a high-frequency signal is reflected at that portion, deteriorating high-frequency characteristics, and cannot be used in a high-frequency semiconductor device used in a frequency band of 10 GHz or more.

【0013】本発明は上記従来技術における問題点に艦
みてなされたものであり、その目的は、配線基板と外部
電気回路基板との間の接合強度を高周波特性を悪化させ
ることなく改善した、接続信頼性の高い、高周波用半導
体素子収納用パッケージあるいは高周波用半導体装置に
好適な高周波用表面実装型配線基板を提供することにあ
る。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems in the prior art, and has as its object to improve the connection strength between a wiring board and an external electric circuit board without deteriorating high-frequency characteristics. An object of the present invention is to provide a high-frequency surface-mounted wiring board which is highly reliable and suitable for a high-frequency semiconductor element storage package or high-frequency semiconductor device.

【0014】[0014]

【課題を解決するための手段】本発明の第1の高周波用
表面実装型配線基板は、セラミックスから成る絶縁基体
の上面もしくは下面に高周波用半導体素子が搭載される
搭載部が形成されるとともにこの搭載部近傍から前記絶
縁基体の下面にかけて導出された高周波用伝送線路が形
成され、この高周波用伝送線路の端部が導電性接続部材
を介して外部電気回路基板表面の配線導体に接合される
高周波用表面実装型配線基板であって、前記絶縁基体の
下面には前記高周波用伝送線路から1.5 mm以上離れた
位置に前記外部電気回路基板との接合を補強する補強用
パッドが形成されていることを特徴とするものである。
According to a first high-frequency surface mount type wiring board of the present invention, a mounting portion for mounting a high-frequency semiconductor element is formed on an upper surface or a lower surface of an insulating base made of ceramics. A high-frequency transmission line led from the vicinity of the mounting portion to the lower surface of the insulating base is formed, and an end of the high-frequency transmission line is joined to a wiring conductor on the surface of the external electric circuit board via a conductive connection member. Surface mounting type wiring board, wherein a reinforcing pad for reinforcing bonding with the external electric circuit board is formed on a lower surface of the insulating base at a position separated from the high-frequency transmission line by 1.5 mm or more. It is characterized by the following.

【0015】また、本発明の第2の高周波用表面実装型
配線基板は、上記構成の高周波用表面実装型配線基板に
おいて、前記搭載部が前記絶縁基体の上面に形成される
とともに、前記高周波用線路導体が、前記絶縁基体の上
面に形成された第1の高周波用伝送線路と、前記絶縁基
体の下面に前記第1の高周波用伝送線路と対向して形成
された第2の高周波用伝送線路と、前記絶縁基体の内部
に形成され、前記第1の高周波用伝送線路と前記第2の
高周波用伝送線路との対向位置に対応してスロット孔が
形成された接地導体層とから成り、前記第1の高周波用
伝送線路と前記第2の高周波用伝送線路とが前記スロッ
ト孔を介して電磁結合していることを特徴とするもので
ある。
According to a second high-frequency surface-mount wiring board of the present invention, in the high-frequency surface-mount wiring board having the above structure, the mounting portion is formed on an upper surface of the insulating base, and A first high-frequency transmission line formed on an upper surface of the insulating base, and a second high-frequency transmission line formed on the lower surface of the insulating base so as to face the first high-frequency transmission line. And a ground conductor layer formed inside the insulating base, and formed with a slot hole corresponding to an opposing position of the first high-frequency transmission line and the second high-frequency transmission line, The first high-frequency transmission line and the second high-frequency transmission line are electromagnetically coupled via the slot hole.

【0016】[0016]

【発明の実施の形態】本発明の第1の高周波用表面実装
型配線基板によれば、絶縁基体の下面に形成された外部
電気回路基板の配線導体に接合される高周波用伝送線路
に対して、その横に形成する場合には線路幅方向に、ま
たその延長上に形成する場合には線路長方向に1.5 mm
以上離れた位置に外部電気回路基板との接合を補強する
補強用パッドを形成したことから、この補強用パッドと
これに対応して外部電気回路基板に設けられた接続パッ
ド等とを接合することにより、高周波伝送線路を伝搬す
る高周波信号に電気的な悪影響を与えることなく配線基
板と外部電気回路基板との接合面積を増加させて接合強
度を高めることができ、その結果、高周波特性に悪影響
を及ぼさずに接合信頼性を高めることができる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS According to a first high-frequency surface-mount wiring board of the present invention, a high-frequency transmission line joined to a wiring conductor of an external electric circuit board formed on a lower surface of an insulating base is provided. , 1.5 mm in the line width direction when formed on the side, and in the line length direction when formed on the extension.
Since the reinforcing pad for reinforcing the connection with the external electric circuit board is formed at the above-mentioned distant position, it is necessary to bond the reinforcing pad and the corresponding connection pad provided on the external electric circuit board. As a result, the bonding strength between the wiring board and the external electric circuit board can be increased without adversely affecting the high-frequency signal propagating through the high-frequency transmission line, thereby increasing the bonding strength. It is possible to increase the joining reliability without exerting any influence.

【0017】また、本発明の第2の高周波用表面実装型
配線基板によれば、絶縁基体上面の搭載部から絶縁基体
下面に導出される高周波用伝送線路を、絶縁基体の上面
に搭載部近傍から導出されて形成された第1の高周波用
伝送線路と、絶縁基体の下面に第1の高周波用伝送線路
と対向して形成された第2の高周波用伝送線路と、絶縁
基体の内部に形成され、第1の高周波用伝送線路と第2
の高周波用伝送線路との対向位置に対応してスロット孔
が形成された接地導体層とにより構成し、第1の高周波
用伝送線路と第2の高周波用伝送線路とが前記スロット
孔を介して電磁結合しているものとしたことから、絶縁
基体上面の第1の高周波用伝送線路を高周波用半導体素
子の気密封止のために絶縁基体上面に接合される壁部材
あるいは蓋体の側壁を通過させることなく、また、絶縁
基体内部に設けられるスルーホール導体やビア導体等の
貫通導体によることなく絶縁基体下面の第2の高周波用
伝送線路に高周波的に接続させることができる。そのた
め、側壁通過部において高周波用伝送線路が例えばマイ
クロストリップ線路からストリップ線路へと変換される
ことによる反射損や放射損の発生がなく、また、貫通導
体による透過損失の影響を受けることがないので、絶縁
基体上面の第1の高周波用伝送線路から下面の第2の高
周波用伝送線路へ伝送損失を抑制して高周波信号を伝送
することができ、配線基板と外部電気回路基板との間の
接合強度を高めつつ高周波特性をさらに高めることがで
きる。
According to the second high-frequency surface mount type wiring board of the present invention, the high-frequency transmission line led out from the mounting portion on the upper surface of the insulating base to the lower surface of the insulating base is mounted on the upper surface of the insulating base in the vicinity of the mounting portion. And a second high-frequency transmission line formed on the lower surface of the insulating base so as to face the first high-frequency transmission line, and formed inside the insulating base. And a first high-frequency transmission line and a second high-frequency transmission line.
And a ground conductor layer in which a slot hole is formed corresponding to a position facing the high-frequency transmission line. The first high-frequency transmission line and the second high-frequency transmission line are interposed through the slot hole. Because of the electromagnetic coupling, the first high-frequency transmission line on the upper surface of the insulating base passes through the wall member or the side wall of the lid joined to the upper surface of the insulating base for hermetic sealing of the high-frequency semiconductor element. The connection can be made at a high frequency to the second high-frequency transmission line on the lower surface of the insulating base without using the through conductor such as a through-hole conductor or a via conductor provided inside the insulating base. Therefore, there is no occurrence of reflection loss or radiation loss due to conversion of the high-frequency transmission line from the microstrip line to the stripline in the side wall passage portion, and there is no influence of transmission loss due to the through conductor. A high-frequency signal can be transmitted while suppressing transmission loss from the first high-frequency transmission line on the upper surface of the insulating base to the second high-frequency transmission line on the lower surface, and the connection between the wiring board and the external electric circuit board can be performed. High frequency characteristics can be further enhanced while increasing the strength.

【0018】すなわち、本発明の高周波用表面実装型配
線基板によれば、上記のように補強用パッドを設けたこ
とにより、配線基板と外部電気回路基板との間の接合強
度をこの補強用パッドにより向上させることとなり、従
来のように補強用パッドがない場合と比較してより高い
接合信頼性を得ることができる。しかも、高周波用伝送
線路の近傍に補強用パッドのような伝送線路以外の導電
性パターンを設けることは、通常はたとえその導電性パ
ターンが高周波用伝送線路と直流的に接続されていなく
ても高周波的に結合されていれば高周波回路としてのス
タブを設けることと同じ結果となって高周波用伝送線路
の高周波伝送特性の劣化をもたらすこととなるが、本発
明者が鋭意検討を行なった結果、特に使用する高周波信
号が10GHz以上100 GHz以下のとき、本発明のよう
にマイクロストリップ線路等の高周波伝送線路の横に形
成する場合はその線路幅方向に、また延長上に形成する
場合はその線路長方向にそれぞれ1.5 mm以上離れた距
離に補強用パッドを設ければ、補強用パッドと高周波用
伝送線路とが高周波的に結合されることがなく高周波特
性の悪化をもたらさないことを見出し、外部電気回路基
板との接合強度を高めつつ良好な高周波特性を有する高
信頼性でかつ高性能の高周波用表面実装型配線基板を実
現するに至ったものである。
That is, according to the surface mounting type wiring board for high frequency wave of the present invention, by providing the reinforcing pad as described above, the bonding strength between the wiring board and the external electric circuit board is reduced by the reinforcing pad. Therefore, higher bonding reliability can be obtained as compared with the conventional case where there is no reinforcing pad. Moreover, providing a conductive pattern other than the transmission line, such as a reinforcing pad, near the high-frequency transmission line is usually performed even if the conductive pattern is not DC-connected to the high-frequency transmission line. If stubs are provided as a high-frequency circuit, the same result will result in deterioration of the high-frequency transmission characteristics of the high-frequency transmission line, but as a result of the inventor's intensive studies, particularly When a high-frequency signal to be used is 10 GHz or more and 100 GHz or less, the line length direction is formed when the signal is formed beside a high-frequency transmission line such as a microstrip line as in the present invention, and the line length is formed when the signal is formed on an extension. If the reinforcing pads are provided at a distance of 1.5 mm or more in each direction, the reinforcing pads and the high-frequency transmission line will not be coupled at high frequencies, and It has been found that this does not cause deterioration of the performance, and has led to the realization of a high-reliability and high-performance surface mount type wiring board for high frequency with good high frequency characteristics while increasing the bonding strength with the external electric circuit board. is there.

【0019】また、本発明の第2の高周波用表面実装型
配線基板によれば、絶縁基体上面の高周波用半導体素子
の搭載部から下面に高周波用伝送線路を導出するのに絶
縁基体内部に設けたスロット孔を有する接地導体層を介
した電磁結合の構成を用いたことにより、100 GHz程
度までの高周波の使用にも耐え得る極めて良好な高周波
特性を有する、高周波用半導体装置に好適な高周波用表
面実装型配線基板となる。
Further, according to the second high-frequency surface-mount wiring board of the present invention, the high-frequency transmission line is provided inside the insulating base for leading the high-frequency transmission line from the mounting portion of the high-frequency semiconductor element on the upper surface of the insulating base to the lower surface. The use of a configuration of electromagnetic coupling via a ground conductor layer having a slotted hole has extremely good high-frequency characteristics that can withstand the use of high frequencies up to about 100 GHz, and is suitable for a high-frequency semiconductor device. It becomes a surface mount type wiring board.

【0020】なお、本発明の高周波用表面実装型配線基
板において、絶縁基体の下面に形成する補強用パッド
は、高周波用伝送線路から1.5 mm以上離れていれば絶
縁基体の下面の任意の位置に形成することができるが、
補強用パッドにより配線基板と外部電気回路基板との間
の応力に対してより効果的に対抗するためには、これら
補強用パッドにもっとも応力が加わるように、絶縁基体
が矩形状であればその4隅の角部に形成しておくことが
好ましい。
In the high frequency surface mount type wiring board of the present invention, the reinforcing pad formed on the lower surface of the insulating base is located at an arbitrary position on the lower surface of the insulating base if it is at least 1.5 mm away from the high frequency transmission line. Can be formed,
In order for the reinforcing pads to more effectively counter the stress between the wiring board and the external electric circuit board, if the insulating base is rectangular so that the stress is applied most to these reinforcing pads, the It is preferable to form them at the four corners.

【0021】このように補強用パッドを絶縁基体の4隅
に設けることにより、配線基板と外部電気回路基板との
間の熱応力がこれら補強用パッドの部分にもっとも加わ
ることになるために、その応力に十分耐え得る接合強度
を有する配線基板となり、さらに高い接続信頼性を得る
ことができるものとなる。
Since the reinforcing pads are provided at the four corners of the insulating base as described above, thermal stress between the wiring board and the external electric circuit board is applied most to these reinforcing pads. The wiring board has a bonding strength enough to withstand stress, and higher connection reliability can be obtained.

【0022】以下、図面に基づいて本発明の高周波用表
面実装型配線基板について詳細に説明する。
The high frequency surface mount type wiring board of the present invention will be described below in detail with reference to the drawings.

【0023】図1(a)〜(c)は、それぞれ本発明の
高周波用表面実装型配線基板の実施の形態の一例を示す
下面図・横断面図および縦断面図である。
FIGS. 1 (a) to 1 (c) are a bottom view, a transverse sectional view, and a vertical sectional view, respectively, showing an example of an embodiment of a high frequency surface mount type wiring board according to the present invention.

【0024】図1において、21はセラミックスから成る
絶縁基体であり、21aは絶縁基体21の上面に形成された
高周波用半導体素子を搭載するための搭載部である。こ
の例では搭載部21aは絶縁基体21の上面に設けられた凹
部に形成されているが、搭載部21aは平坦面上に形成し
てもよく、絶縁基体21の下面に形成してもよい。
In FIG. 1, reference numeral 21 denotes an insulating base made of ceramic, and reference numeral 21a denotes a mounting portion for mounting a high-frequency semiconductor element formed on the upper surface of the insulating base 21. In this example, the mounting portion 21a is formed in a concave portion provided on the upper surface of the insulating base 21, but the mounting portion 21a may be formed on a flat surface or on the lower surface of the insulating base 21.

【0025】本発明の高周波用表面実装型配線基板の絶
縁基体21に好適に用いられるセラミックスとしては、例
えば半導体素子収納用パッケージとして広く用いられて
いるタングステンを内部配線とするアルミナセラミック
ス(酸化アルミニウム質焼結体)が挙げられる。また、
より高周波での伝送損失を下げるために配線材料として
銀・金・銅等を用いた低温焼成セラミックス等を用いる
こともできる。
The ceramics suitably used for the insulating base 21 of the high-frequency surface-mount type wiring board of the present invention include, for example, alumina ceramics (tungsten oxide) having tungsten as an internal wiring which is widely used as a package for housing semiconductor elements. Sintered body). Also,
In order to reduce transmission loss at higher frequencies, low-temperature fired ceramics using silver, gold, copper, or the like as a wiring material can be used.

【0026】22は搭載部21a近傍から絶縁基体21の下面
にかけて導出された高周波信号を伝送するための高周波
用伝送線路である。この例では絶縁基体21の下面ではマ
イクロストリップ線路の構造のものを示しており、搭載
部21a近傍から絶縁基体21の下面までの部分は省略して
いる。この高周波用伝送線路21の端部が直接、あるいは
その端部に接続された接続端子や端部を変換したコプレ
ーナ線路の端部が、半田バンプや銀ろうバンプ・金バン
プ等の導電性接続部材(図示せず)により外部電気回路
基板(図示せず)表面の配線導体に接合されることによ
り、この配線基板が外部電気回路基板に表面実装される
こととなる。
Reference numeral 22 denotes a high-frequency transmission line for transmitting a high-frequency signal derived from the vicinity of the mounting portion 21a to the lower surface of the insulating base 21. In this example, a microstrip line structure is shown on the lower surface of the insulating base 21, and a portion from the vicinity of the mounting portion 21a to the lower surface of the insulating base 21 is omitted. The ends of the high-frequency transmission line 21 are directly connected, or the connection terminals connected to the ends or the ends of the coplanar lines converted from the ends are connected to conductive connecting members such as solder bumps, silver solder bumps, and gold bumps. By being joined to the wiring conductor on the surface of the external electric circuit board (not shown) by (not shown), this wiring board is surface-mounted on the external electric circuit board.

【0027】このような高周波用伝送線路22としては、
コプレーナ線路やストリップ線路・グランド付きコプレ
ーナ線路等も用いることができる。この高周波用伝送線
路22を搭載部21a近傍から絶縁基体21の下面まで導出す
る構造には、絶縁基体21の内部や側面に形成した高周波
用伝送線路22としての配線導体層や絶縁基体21内部を貫
通するスルーホール導体やビア導体等の貫通導体等を採
用し得る。また、搭載部21a近傍から、絶縁基体21の上
面に搭載部21aを取り囲むようにして取着した壁部材の
ハーメチックシール部を通過して、絶縁基体21の側面を
回り込んで絶縁基体21の下面に導出する構造としてもよ
い。
As such a high-frequency transmission line 22,
A coplanar line, a strip line, a coplanar line with ground, and the like can also be used. The structure for leading the high-frequency transmission line 22 from the vicinity of the mounting portion 21a to the lower surface of the insulating base 21 includes a wiring conductor layer or the inside of the insulating base 21 as the high-frequency transmission line 22 formed inside or on the side surface of the insulating base 21. A penetrating conductor such as a penetrating through-hole conductor or via conductor may be employed. In addition, from the vicinity of the mounting portion 21a, it passes through the hermetic seal portion of the wall member attached to the upper surface of the insulating base 21 so as to surround the mounting portion 21a, and wraps around the side surface of the insulating base 21 to form the lower surface of the insulating base 21. May be derived.

【0028】また、高周波用伝送線路22には、タングス
テンやモリブデン等の高融点金属にニッケルメッキや金
メッキを施した厚膜導体、あるいは銀・銀−パラジウム
等の厚膜導体、銅に金メッキを施した厚膜導体、クロム
やチタン等を下地導体とし表面を金とする薄膜導体等を
用いることができる。
The high-frequency transmission line 22 is made of a high-melting metal such as tungsten or molybdenum and plated with nickel or gold, or a thick-film conductor such as silver / silver-palladium or gold-plated copper. A thick film conductor, a thin film conductor having chromium or titanium or the like as a base conductor and a gold surface can be used.

【0029】そして、23は外部電気回路基板との接合を
補強するために絶縁基体21の下面に高周波用伝送線路22
から1.5 mm以上離れた位置に形成された補強用パッド
であり、この例では補強用パッド23を絶縁基体21の下面
のほぼ中央部の縦方向に形成された高周波用伝送線路22
の横にその線路幅方向に距離dが1.5 mm以上離れた位
置に形成しており、また、矩形状の絶縁基体21の4隅の
角部にそれぞれ補強用パッド23を形成している。
Reference numeral 23 denotes a high-frequency transmission line 22 on the lower surface of the insulating base 21 for reinforcing the connection with the external electric circuit board.
In this example, the reinforcing pad 23 is formed by a high-frequency transmission line 22 formed in a longitudinal direction substantially at the center of the lower surface of the insulating base 21.
Are formed at positions at a distance d of 1.5 mm or more in the line width direction, and reinforcing pads 23 are formed at the four corners of the rectangular insulating base 21 respectively.

【0030】なお、この例では各補強用パッド23を絶縁
基体21の側面に延設して側面パターン24を形成するよう
にしている。このように側面パターン24を延設した場合
には応力集中を分散させることができ、より効果の高い
補強用パッドとなるが、これら側面パターン24は必ずし
も必要とするものではない。
In this example, each reinforcing pad 23 is extended on the side surface of the insulating base 21 to form a side pattern 24. When the side patterns 24 are extended as described above, stress concentration can be dispersed, and a more effective reinforcing pad can be obtained. However, these side patterns 24 are not always required.

【0031】このような補強用パッド23や側面パターン
24の位置や大きさ等は、高周波用伝送線路22より1.5 m
m以上離れており、かつその他のパターンに短絡するな
どの影響を与えない範囲で任意に設定される。また、補
強用パッド23や側面パターン24は、絶縁基体21のセラミ
ックスとの間で十分な密着強度を得ることができ、かつ
表面が半田等の金属ろう材で濡れる材料であれば、厚膜
・薄膜等どのような材料の膜を用いても構わない。
The reinforcing pad 23 and the side pattern
The position and size of 24 are 1.5 m from the high-frequency transmission line 22
The distance is set arbitrarily within a range that is not more than m apart and does not affect shorting of other patterns. In addition, the reinforcing pad 23 and the side pattern 24 can be made of a thick film or a material that can obtain sufficient adhesion strength with the ceramic of the insulating base 21 and whose surface is wetted by a brazing metal such as solder. A film of any material such as a thin film may be used.

【0032】なお、25は電源あるいはバイアス信号のた
めの電極パッドであり、これらは高周波用半導体素子の
仕様や特性等に応じて必要により適宜設けられるもので
ある。
Reference numeral 25 denotes an electrode pad for a power supply or a bias signal, and these are provided as necessary according to the specifications and characteristics of the high-frequency semiconductor element.

【0033】このような本発明の高周波用表面実装型配
線基板によれば、絶縁基体21の下面に形成された高周波
用伝送線路22に対して、その横にそれぞれ線路幅方向に
距離dが1.5 mm以上離れた位置に外部電気回路基板と
の接合を補強する補強用パッド23を形成したことから、
高周波用伝送線路22の端部を外部電気回路基板表面の配
線導体に半田バンプ等の導電性接続部材により接合する
とともに、この補強用パッド23とこれに対応して外部電
気回路基板に設けられた配線導体や接続パッド等とを同
じく半田バンプ等の導電性接続部材により接合すること
によって、高周波伝送線路22を伝搬する高周波信号に電
気的な悪影響を与えることなくこの配線基板と外部電気
回路基板との接合面積を増加させて接合強度を高めるこ
とができ、その結果、高周波特性に悪影響を及ぼさずに
接合信頼性を高めることができるものとなる。
According to such a high-frequency surface-mount type wiring board of the present invention, the distance d in the width direction of the transmission line 22 formed on the lower surface of the insulating base 21 is 1.5 to 1.5 mm. mm or more away from the formation of the reinforcing pad 23 for reinforcing the joint with the external electric circuit board,
The end of the high-frequency transmission line 22 was joined to the wiring conductor on the surface of the external electric circuit board by a conductive connection member such as a solder bump, and the reinforcing pad 23 and the corresponding pad were provided on the external electric circuit board. The wiring board and the external electric circuit board are connected to the wiring board and the external electric circuit board without adversely affecting the high-frequency signal propagating through the high-frequency transmission line 22 by joining the wiring conductor and the connection pad with the conductive connection member such as a solder bump. The bonding area can be increased to increase the bonding strength, and as a result, the bonding reliability can be improved without adversely affecting the high frequency characteristics.

【0034】そして、絶縁基体21の搭載部21aに高周波
用半導体素子を搭載してその電極と搭載部21a近傍の高
周波用伝送線路22とをボンディングワイヤや半田バンプ
等により電気的に接続し、この搭載部21aを覆うように
絶縁基体21の上面に蓋体を取着し、あるいは搭載部21a
を取り囲むようにして絶縁基体21の上面に接合された壁
部材の上面に蓋体を取着し、あるいは搭載部21aを覆う
ように封止用樹脂を付与することにより、高周波用半導
体素子が気密に収容されて、良好な接続信頼性とともに
優れた高周波特性を有する高周波用半導体装置となる。
Then, the high-frequency semiconductor element is mounted on the mounting portion 21a of the insulating base 21, and its electrodes and the high-frequency transmission line 22 near the mounting portion 21a are electrically connected by bonding wires, solder bumps or the like. A lid is attached to the upper surface of the insulating base 21 so as to cover the mounting portion 21a, or the mounting portion 21a
By attaching a lid to the upper surface of the wall member joined to the upper surface of the insulating base 21 so as to surround the insulating substrate 21, or by applying a sealing resin so as to cover the mounting portion 21a, the high-frequency semiconductor element is airtight. To provide a high-frequency semiconductor device having excellent connection reliability and excellent high-frequency characteristics.

【0035】また、高周波用伝送線路22を搭載部21a近
傍から絶縁基体21の下面に導出する構造として、図2に
部分破断斜視図で示すように、搭載部21aを絶縁基体21
の上面に形成されている場合は、絶縁基体21の上面の搭
載部21a近傍に形成された第1の高周波用伝送線路22a
と、絶縁基体21の下面に第1の高周波用伝送線路22aと
対向して形成された第2の高周波用伝送線路22bと、絶
縁基体21の内部に形成され、第1の高周波用伝送線路22
aと第2の高周波用伝送線路22bとの対向位置に対応し
てスロット孔27が形成された接地導体層26とで構成し
て、同図中にAで示した領域において第1の高周波用伝
送線路22aと第2の高周波用伝送線路22bとをスロット
孔27を介して電磁結合させることにより、ハーメチック
シール部における反射損や放射損の発生がなく、また、
貫通導体による透過損失の影響もない、低伝送損失の極
めて良好な高周波特性を有する本発明の第2の高周波用
表面実装型配線基板となる。
As a structure for leading the high-frequency transmission line 22 from the vicinity of the mounting portion 21a to the lower surface of the insulating base 21, as shown in a partially cutaway perspective view in FIG.
The first high-frequency transmission line 22a formed near the mounting portion 21a on the upper surface of the insulating base 21.
A second high-frequency transmission line 22b formed on the lower surface of the insulating base 21 so as to face the first high-frequency transmission line 22a; and a first high-frequency transmission line 22b formed inside the insulating base 21.
a and a ground conductor layer 26 in which a slot hole 27 is formed corresponding to a position where the second high-frequency transmission line 22b faces the first high-frequency transmission line 22b. By electromagnetically coupling the transmission line 22a and the second high-frequency transmission line 22b via the slot hole 27, there is no reflection loss or radiation loss in the hermetic seal portion, and
A second high-frequency surface-mount wiring board according to the present invention having extremely good high-frequency characteristics with low transmission loss without being affected by transmission loss due to through conductors.

【0036】このような高周波用伝送線路の導出構造と
することにより、低損失で高周波信号を導出できると同
時に絶縁基体21の上面では第1の高周波用伝送線路22a
を絶縁基体21の側壁に入り込ませる必要がなくなって、
この配線基板をパッケージとして使用した場合に内部の
気密封止の信頼性が高いものとすることができる。
By adopting such a structure for deriving the high-frequency transmission line, a high-frequency signal can be derived with low loss, and at the same time, the first high-frequency transmission line 22a is formed on the upper surface of the insulating base 21.
Need not enter the side wall of the insulating base 21,
When this wiring board is used as a package, the reliability of hermetic sealing inside can be made high.

【0037】そして、絶縁基体21の搭載部21aに高周波
用半導体素子28を搭載し、その上面の電極と第1の高周
波用伝送線路22aとをボンディングワイヤ29で接続し、
またはその下面の電極と第1の高周波用伝送線路22aと
を半田バンプ等の導電性接続部材で接合して、絶縁基体
21の上面に搭載部21aを覆うように蓋体を取着し、ある
いは搭載部21aを覆うように封止用樹脂を付与すること
により、高周波用半導体素子24が内部に気密に収容され
て、外部電気回路基板との良好な接続信頼性とともに極
めて優れた高周波特性を有する高周波用半導体装置とな
る。
Then, the high-frequency semiconductor element 28 is mounted on the mounting portion 21a of the insulating base 21, and the electrode on the upper surface thereof is connected to the first high-frequency transmission line 22a by the bonding wire 29.
Alternatively, the electrode on the lower surface thereof and the first high-frequency transmission line 22a are joined by a conductive connecting member such as a solder bump to form an insulating base.
By attaching a lid to the upper surface of the 21 to cover the mounting portion 21a, or by applying a sealing resin to cover the mounting portion 21a, the high-frequency semiconductor element 24 is housed in an airtight manner, A high-frequency semiconductor device having excellent connection reliability with an external electric circuit board and extremely high frequency characteristics is obtained.

【0038】[0038]

【実施例】次に、本発明の高周波用表面実装型配線基板
について具体例を説明する。
Next, a specific example of the high frequency surface mount type wiring board of the present invention will be described.

【0039】絶縁基体のセラミックス材料として92%純
度の多層配線基板用アルミナセラミックス(熱膨張係数
7×10-6/℃)を用い、このアルミナセラミックスの所
定厚みのセラミックグリーンシートを用意し、これらセ
ラミックグリーンシートの上面および下面ならびに内部
に形成した貫通孔にタングステンペーストを用いて所定
の搭載部を構成する配線導体および高周波用伝送線路な
らびに貫通導体となるパターンを印刷し、これらを積層
した後、長さ約9mm×幅約6mmの矩形状の形状に切
断して、加湿フォーミングガス中1600℃・1時間の焼成
を行なった。その後、高周波用伝送線路に対してニッケ
ルめっきを1μm・金めっきを1.5 μm施して、本発明
の高周波用表面実装型配線基板の実施例のサンプルなら
びに比較例のサンプルを得た。
As a ceramic material for the insulating substrate, a 92% -purity alumina ceramic for a multilayer wiring board (coefficient of thermal expansion: 7 × 10 −6 / ° C.) is used. A ceramic green sheet having a predetermined thickness of this alumina ceramic is prepared. The upper and lower surfaces of the green sheet and the through-holes formed therein are printed with a wiring conductor and a high-frequency transmission line constituting a predetermined mounting portion using a tungsten paste, and a pattern to be a through conductor is printed. It was cut into a rectangular shape having a size of about 9 mm and a width of about 6 mm, and fired in a humidified forming gas at 1600 ° C. for 1 hour. Thereafter, the high-frequency transmission line was plated with nickel at 1 μm and gold at 1.5 μm to obtain a high-frequency surface-mount type wiring board of the present invention and a sample of a comparative example.

【0040】ここで、本発明の実施例のサンプルとして
は、絶縁基体下面の高周波用伝送線路と補強用パッドの
パターンを図1(a)に示したものとして、線路幅が0.
2 mmの高周波用伝送線路22に対して、高周波用伝送線
路22と補強用パッド23との距離dを1.0 mm・1.2 mm
・1.5 mm・2.0 mmとしてそれぞれ試料A・B・C・
Dとした。また、本発明の他の実施例のサンプルとし
て、高周波用伝送線路と補強用パッドのパターンを図3
(a)に下面図で示したように絶縁基体21の下面中央部
の高周波用伝送線路22間に補強用パッド30を形成したも
のとし、線路幅が0.2 mmの高周波用伝送線路22に対し
て、高周波用伝送線路22と補強用パッド30との距離dを
1.5 mmとし、補強用パッド30の長さLを3mm、幅W
を4mmとして試料Eとした。さらに、比較例のサンプ
ルとして、図3(b)に下面図で示したように線路幅が
0.2 mmの高周波用伝送線路22に対して補強用パッドを
形成しない従来のパターンのものとし、試料Fとした。
Here, as a sample of the embodiment of the present invention, the pattern of the high-frequency transmission line and the reinforcing pad on the lower surface of the insulating base is shown in FIG.
For the high-frequency transmission line 22 of 2 mm, the distance d between the high-frequency transmission line 22 and the reinforcing pad 23 is 1.0 mm · 1.2 mm.
・ Samples A, B, C, and 1.5 mm and 2.0 mm respectively
D. As a sample of another embodiment of the present invention, a pattern of a high-frequency transmission line and a reinforcing pad is shown in FIG.
(A) As shown in the bottom view, it is assumed that a reinforcing pad 30 is formed between the high-frequency transmission lines 22 at the center of the lower surface of the insulating base 21 and the high-frequency transmission line 22 having a line width of 0.2 mm. And the distance d between the high-frequency transmission line 22 and the reinforcing pad 30
1.5 mm, the length L of the reinforcing pad 30 is 3 mm, and the width W
Was set to 4 mm to obtain a sample E. Further, as a sample of the comparative example, as shown in the bottom view in FIG.
A sample F having a conventional pattern in which no reinforcing pad was formed on the high-frequency transmission line 22 of 0.2 mm was used.

【0041】このようにして得た試料A〜Fにつき、そ
れぞれガラス−フッ素樹脂複合銅張り回路基板(熱膨張
係数13×10-6/℃)表面に形成した銅による配線導体に
対して絶縁基体21下面の高周波用伝送線路22の端部を半
田により接合して表面実装した。ここで、配線導体と高
周波用伝送線路22の端部との半田による接合は、配線導
体上に所定のパターンにて半田ペーストを印刷し、その
上に試料下面の高周波用伝送線路22の端部が位置するよ
うに各試料を搭載後、リフロー炉にて半田を溶融して行
なった。また、半田高さは50μm以下となるように半田
ペーストの量を調整した。
For each of the samples A to F thus obtained, an insulating substrate was used for the wiring conductor made of copper formed on the surface of the glass-fluorine resin composite copper-clad circuit board (coefficient of thermal expansion: 13 × 10 −6 / ° C.). The end of the high-frequency transmission line 22 on the lower surface 21 was joined by soldering and surface-mounted. Here, the connection between the wiring conductor and the end of the high-frequency transmission line 22 by soldering is performed by printing a solder paste in a predetermined pattern on the wiring conductor, and placing the solder paste on the end of the high-frequency transmission line 22 on the lower surface of the sample. After mounting each sample so as to be positioned, the solder was melted in a reflow furnace. The amount of the solder paste was adjusted so that the solder height was 50 μm or less.

【0042】そして、外部電気回路基板に接続した試料
A〜Fを各々10個ずつに対して−65℃〜+150 ℃の温度
サイクル試験を行なった。温度サイクル試験後において
テスターを用いて外部電気回路基板の配線導体と各試料
の高周波用伝送線路22との接続部の断線の有無を調べる
ことにより、接続不良の発生の確認を行なった。この試
験の合格の基準は1000サイクルで接続部の断線等の接続
不良が発生しないこととした。
A temperature cycle test of -65 ° C. to + 150 ° C. was performed on 10 samples A to F each connected to the external electric circuit board. After the temperature cycle test, the occurrence of a connection failure was confirmed by examining whether or not the connection between the wiring conductor of the external electric circuit board and the high-frequency transmission line 22 of each sample was broken using a tester. The criterion for passing this test was that no connection failure such as disconnection of the connection portion occurred in 1000 cycles.

【0043】この試験において温度サイクルの回数に対
する接続不良が発生個数を調べたところ、比較例の試料
Fにおいては500 サイクルで2個、1000サイクルでさら
に5個、2000サイクルで残り3個にも接続不良が発生し
た。一方、試料A〜Eではいずれも1000サイクルでは接
続不良の発生はなく、試料Eでは2000サイクルで1個、
3000サイクルでさらに1個の接続不良が発生し、試料A
〜Dではいずれも3000サイクルで1個の接続不良が発生
したのみであった。この結果より、絶縁基体21下面の高
周波用伝送線路22の近傍に補強用パッド23または30を形
成した試料A〜Eによれば、いずれも良好な接続信頼性
を有することが確認できた。
In this test, the number of occurrences of connection failures with respect to the number of temperature cycles was examined. In sample F of the comparative example, two were connected at 500 cycles, five were further at 1,000 cycles, and the remaining three were connected at 2,000 cycles. A defect has occurred. On the other hand, in Samples A to E, no connection failure occurred in 1000 cycles, and in Sample E, one in 2000 cycles,
One more connection failure occurred in 3000 cycles, and sample A
In each of D to D, only one connection failure occurred in 3000 cycles. From these results, it was confirmed that all of the samples A to E in which the reinforcing pads 23 or 30 were formed near the high-frequency transmission line 22 on the lower surface of the insulating base 21 had good connection reliability.

【0044】次に、これら各試料A〜Eについて、搭載
部21a近傍から絶縁基体21下面の高周波用伝送線路22ま
での導出構造として図2に示した電磁結合構造を用いた
ものを用意し、搭載部21aから高周波用伝送線路22の端
部までの高周波信号伝送特性の確認を行なった。なお、
搭載部21aの近傍および絶縁基体21下面における高周波
用伝送線路22には、いずれも線路幅が0.2 mmのマイク
ロストリップ線路を用いた。
Next, for each of the samples A to E, a sample using the electromagnetic coupling structure shown in FIG. 2 was prepared as a lead-out structure from the vicinity of the mounting portion 21a to the high-frequency transmission line 22 on the lower surface of the insulating base 21. High-frequency signal transmission characteristics from the mounting portion 21a to the end of the high-frequency transmission line 22 were confirmed. In addition,
A microstrip line having a line width of 0.2 mm was used as the high-frequency transmission line 22 in the vicinity of the mounting portion 21a and on the lower surface of the insulating base 21.

【0045】そして、高周波信号の伝送特性の評価とし
て、各試料の搭載部と高周波用伝送線路の端部の外部電
気回路基板との接合箇所とにコプレーナ/マイクロスト
リップ線路変換基板を設け、エアコプレーナプローブと
ネットワークアナライザを用いて40GHzでの挿入損失
の測定を行なった。ここでの合格の基準は−1dB以下
とした。
As an evaluation of the transmission characteristics of the high-frequency signal, a coplanar / microstrip line conversion board is provided at the mounting portion of each sample and at the joint between the end of the high-frequency transmission line and the external electric circuit board. The insertion loss was measured at 40 GHz using a probe and a network analyzer. The acceptance criteria here were -1 dB or less.

【0046】その結果、それぞれ試料Aでは−4dB、
試料Bでは−1.5 dB、試料Cでは−0.7 dB、試料D
では−0.6 dB、試料Eでは−0.6 dBとなり、本発明
の実施例である試料C・DおよびEでは、いずれも良好
な伝送特性を有するものであった。
As a result, for sample A, -4 dB,
-1.5 dB for sample B, -0.7 dB for sample C, sample D
In this case, -0.6 dB was obtained in Sample E, and -0.6 dB was obtained in Sample E. Samples C, D, and E, which are examples of the present invention, all had good transmission characteristics.

【0047】以上の結果により、本発明の試料C・Dお
よびEによれば、外部電気回路基板との接続信頼性が高
く、しかも高周波伝送特性が良好な高周波用表面実装型
配線基板となることが確認できた。
From the above results, according to the samples C, D and E of the present invention, a high-frequency surface-mounted wiring board having high connection reliability with an external electric circuit board and excellent high-frequency transmission characteristics can be obtained. Was confirmed.

【0048】なお、以上はあくまで本発明の実施の形態
の例示であって、本発明はこれらに限定されるものでは
なく、本発明の要旨を逸脱しない範囲で種々の変更や改
良を加えることは何ら差し支えない。例えば、補強用パ
ッドは接地されていてもいなくてもよく、また、絶縁基
体下面の高周波用伝送線路にマイクロストリップ線路を
用いた場合にその端部にコプレーナ線路との変換基板を
内蔵させるべく、高周波用伝送線路と補強用パッドとの
間に接地層を形成しても構わない。
It should be noted that the above is only an example of the embodiment of the present invention, and the present invention is not limited to the embodiment. Various modifications and improvements may be made without departing from the gist of the present invention. No problem. For example, the reinforcing pad may or may not be grounded, and in the case where a microstrip line is used as the high-frequency transmission line on the lower surface of the insulating base, a conversion board for coplanar line and a coplanar line is incorporated at the end thereof. A ground layer may be formed between the high-frequency transmission line and the reinforcing pad.

【0049】[0049]

【発明の効果】以上のように、本発明の第1の高周波用
表面実装型配線基板によれば、絶縁基体の下面に形成さ
れた外部電気回路基板の配線導体に接合される高周波用
伝送線路に対して1.5 mm以上離れた位置に外部電気回
路基板との接合を補強する補強用パッドを形成したこと
から、この補強用パッドとこれに対応して外部電気回路
基板に設けられた接続パッド等とを接合することによ
り、補強用パッドと高周波用伝送線路とが高周波的に結
合されることがないため、高周波伝送線路を伝搬する高
周波信号に電気的な悪影響を与えることなく配線基板と
外部電気回路基板との接合面積を増加させて接合強度を
高めることができ、その結果、高周波特性に悪影響を及
ぼさずに接合信頼性を高めることができた。
As described above, according to the first high frequency surface mount type wiring board of the present invention, the high frequency transmission line joined to the wiring conductor of the external electric circuit board formed on the lower surface of the insulating base. Is formed at a distance of at least 1.5 mm from the external electric circuit board. This reinforcing pad and the corresponding connection pads provided on the external electric circuit board are provided. And the reinforcing pad and the high-frequency transmission line are not coupled at a high frequency, so that the wiring board and the external The bonding area with the circuit board can be increased to increase the bonding strength, and as a result, the bonding reliability can be improved without affecting the high frequency characteristics.

【0050】また、本発明の第2の高周波用表面実装型
配線基板によれば、絶縁基体上面の搭載部から絶縁基体
下面に導出される高周波用伝送線路を、絶縁基体の上面
に搭載部近傍から導出されて形成された第1の高周波用
伝送線路と、絶縁基体の下面に第1の高周波用伝送線路
と対向して形成された第2の高周波用伝送線路と、絶縁
基体の内部に形成され、第1の高周波用伝送線路と第2
の高周波用伝送線路との対向位置に対応してスロット孔
が形成された接地導体層とにより構成し、第1の高周波
用伝送線路と第2の高周波用伝送線路とが前記スロット
孔を介して電磁結合しているものとしたことから、絶縁
基体上面の第1の高周波用伝送線路を高周波用半導体素
子の気密封止のために絶縁基体上面に接合される壁部材
あるいは蓋体の側壁を通過させることなく、また、絶縁
基体内部に設けられるスルーホール導体やビア導体等の
貫通導体によることなく絶縁基体下面の第2の高周波用
伝送線路に高周波的に接続させることができ、高周波用
伝送線路における反射損や放射損の発生がなく、また、
貫通導体による透過損失の影響を受けることもなくなっ
て、絶縁基体上面の第1の高周波用伝送線路から下面の
第2の高周波用伝送線路へ伝送損失を抑制して100 GH
z程度までの周波数の高周波信号も良好に伝送すること
ができ、配線基板と外部電気回路基板との間の接合強度
を高めつつ高周波特性をさらに高めることができた。
Further, according to the second high frequency surface mount type wiring board of the present invention, the high frequency transmission line led out from the mounting portion on the upper surface of the insulating base to the lower surface of the insulating base is placed on the upper surface of the insulating base near the mounting portion. And a second high-frequency transmission line formed on the lower surface of the insulating base so as to face the first high-frequency transmission line, and formed inside the insulating base. And a first high-frequency transmission line and a second high-frequency transmission line.
And a ground conductor layer in which a slot hole is formed corresponding to a position facing the high-frequency transmission line. The first high-frequency transmission line and the second high-frequency transmission line are interposed through the slot hole. Because of the electromagnetic coupling, the first high-frequency transmission line on the upper surface of the insulating base passes through the wall member or the side wall of the lid joined to the upper surface of the insulating base to hermetically seal the high-frequency semiconductor element. High-frequency transmission line can be connected to the second high-frequency transmission line on the lower surface of the insulating substrate without using a through-hole conductor or a via conductor provided inside the insulating substrate. There is no reflection loss or radiation loss at
The transmission loss from the first high-frequency transmission line on the upper surface of the insulating base to the second high-frequency transmission line on the lower surface is suppressed by eliminating the influence of the transmission loss due to the through conductor, and the transmission loss is reduced to 100 GH.
A high-frequency signal having a frequency up to about z can be transmitted satisfactorily, and the high-frequency characteristics can be further improved while increasing the bonding strength between the wiring board and the external electric circuit board.

【0051】以上により、本発明によれば、配線基板と
外部電気回路基板との間の接合強度を高周波特性を悪化
させることなく改善した、接続信頼性の高い、高周波用
半導体素子収納用パッケージあるいは高周波用半導体装
置に好適な高周波用表面実装型配線基板を提供すること
ができた。
As described above, according to the present invention, a high-reliability high-frequency semiconductor element housing package or a high-reliability high-frequency semiconductor element housing package having improved junction strength between a wiring board and an external electric circuit board without deteriorating high-frequency characteristics. A high-frequency surface-mounted wiring board suitable for a high-frequency semiconductor device can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)〜(c)は、それぞれ本発明の高周波用
表面実装型配線基板の実施の形態の一例を示す下面図・
横断面図および縦断面図である。
1 (a) to 1 (c) are bottom views each showing an example of an embodiment of a high-frequency surface-mounted wiring board according to the present invention.
It is a horizontal sectional view and a vertical sectional view.

【図2】本発明の第2の高周波用表面実装型配線の基板
の実施の形態の一例を示す部分破断斜視図である。
FIG. 2 is a partially cutaway perspective view showing an example of an embodiment of a second high-frequency surface mount type wiring board according to the present invention.

【図3】(a)は本発明の高周波用表面実装型配線基板
の実施例を示す下面図、(b)は比較例を示す下面図で
ある。
FIG. 3 (a) is a bottom view showing an example of a high-frequency surface mount type wiring board of the present invention, and FIG. 3 (b) is a bottom view showing a comparative example.

【図4】従来の高周波用半導体装置の例を示す部分破断
斜視図である。
FIG. 4 is a partially cutaway perspective view showing an example of a conventional high-frequency semiconductor device.

【図5】高周波用表面実装型配線基板における高周波用
伝送線路の導出構造を示す部分破断斜視図である。
FIG. 5 is a partially cutaway perspective view showing a structure for leading out a high-frequency transmission line in a high-frequency surface-mount wiring board.

【符号の説明】[Explanation of symbols]

21・・・・・絶縁基体 21a・・・・搭載部 22・・・・・高周波用伝送線路 22a・・・・第1の高周波用伝送線路 22b・・・・第2の高周波用伝送線路 23、30・・・補強用パッド 26・・・・・接地導体層 27・・・・・スロット孔 28・・・・・高周波用半導体素子 21... Insulating base 21a... Mounting part 22... High-frequency transmission line 22a... First high-frequency transmission line 22b. , 30 ... Reinforcement pad 26 ... Ground conductor layer 27 ... Slot hole 28 ... High frequency semiconductor element

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 セラミックスから成る絶縁基体の上面も
しくは下面に高周波用半導体素子が搭載される搭載部が
形成されるとともに該搭載部近傍から前記絶縁基体の下
面にかけて導出された高周波用伝送線路が形成され、該
高周波用伝送線路の端部が導電性接続部材を介して外部
電気回路基板表面の配線導体に接合される高周波用表面
実装型配線基板であって、前記絶縁基体の下面には前記
高周波用伝送線路から1.5mm以上離れた位置に前記
外部電気回路基板との接合を補強する補強用パッドが形
成されていることを特徴とする高周波用表面実装型配線
基板。
1. A mounting portion on which a high-frequency semiconductor element is mounted is formed on an upper surface or a lower surface of an insulating base made of ceramics, and a high-frequency transmission line extending from the vicinity of the mounting portion to the lower surface of the insulating base is formed. A high-frequency surface-mounted wiring board in which an end of the high-frequency transmission line is joined to a wiring conductor on the surface of the external electric circuit board via a conductive connection member; A reinforcing pad for reinforcing bonding with the external electric circuit board at a position separated from the transmission line by 1.5 mm or more.
【請求項2】 前記搭載部が前記絶縁基体の上面に形成
されるとともに、前記高周波用線路導体が、前記絶縁基
体の上面に形成された第1の高周波用伝送線路と、前記
絶縁基体の下面に前記第1の高周波用伝送線路と対向し
て形成された第2の高周波用伝送線路と、前記絶縁基体
の内部に形成され、前記第1の高周波用伝送線路と前記
第2の高周波用伝送線路との対向位置に対応してスロッ
ト孔が形成された接地導体層とから成り、前記第1の高
周波用伝送線路と前記第2の高周波用伝送線路とが前記
スロット孔を介して電磁結合していることを特徴とする
請求項1記載の高周波用表面実装型配線基板。
A second high-frequency transmission line formed on an upper surface of the insulating substrate; and a lower surface of the insulating substrate, wherein the high-frequency line conductor is formed on an upper surface of the insulating substrate. A second high-frequency transmission line formed opposite to the first high-frequency transmission line, and the first high-frequency transmission line and the second high-frequency transmission formed inside the insulating base. The first high-frequency transmission line and the second high-frequency transmission line are electromagnetically coupled to each other through the slot hole. 2. The high frequency surface mount type wiring board according to claim 1, wherein
JP10066514A 1998-03-17 1998-03-17 Surface-mounting type wiring substrate for high frequency Pending JPH11265961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10066514A JPH11265961A (en) 1998-03-17 1998-03-17 Surface-mounting type wiring substrate for high frequency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10066514A JPH11265961A (en) 1998-03-17 1998-03-17 Surface-mounting type wiring substrate for high frequency

Publications (1)

Publication Number Publication Date
JPH11265961A true JPH11265961A (en) 1999-09-28

Family

ID=13318049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10066514A Pending JPH11265961A (en) 1998-03-17 1998-03-17 Surface-mounting type wiring substrate for high frequency

Country Status (1)

Country Link
JP (1) JPH11265961A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016006846A (en) * 2014-05-27 2016-01-14 京セラ株式会社 Wiring board and electronic apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016006846A (en) * 2014-05-27 2016-01-14 京セラ株式会社 Wiring board and electronic apparatus

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