JPH1126470A - Semiconductor substrate, semiconductor device and solar cell, method for manufacturing semiconductor substrate and method for manufacturing thin-film semiconductor, processing device for semiconductor substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To raise the temperature of a semiconductor thin plate to a target temperature quickly and accurately with no variation in temperature by providing a structure where a semiconductor thin plate is Jointed to at least one main surface of a heater substrate as one body. SOLUTION: A semiconductor substrate S is provide with a heater substrate I. On one main surface or both main surfaces, a semiconductor thin plate 2 comprising an IV group semiconductor and III-V group and II-VI group compound semiconductor such as Si, Ge, SiGe, GaAs is jointed to be one body. Comprising such required specific resistance as of C, SiC carbon group substrate and Si substrate, the heater substrate 1 generates joule's heat when electrified through selection of its thickness and form. On the heater substrate 1, a material layer 3 is coated for such purpose as preventing the heater substrate 1 from being oxidized. Thus, a target temperature is reached quickly and accurately with no variation in temperature, resulting in shorter work hour, improved yield, reduced power consumption for heating.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor substrate, a semiconductor device and a solar cell, a method for manufacturing a semiconductor substrate, a method for manufacturing a thin film semiconductor, and a processing apparatus for a semiconductor substrate.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices such as a single semiconductor device, a semiconductor integrated circuit, and a solar cell, and further in the manufacture of a semiconductor substrate itself and a thin film semiconductor which constitute these semiconductor devices, a semiconductor film, an insulating film, etc. Various processes involving heating such as film formation and oxidation processes are performed. When such a process involving heating is performed, the semiconductor substrate or the semiconductor substrate or the like is usually heated on a susceptor provided with a heater on the semiconductor substrate or the semiconductor substrate or the like to be processed (hereinafter referred to as an object to be processed). ) Is mounted, the susceptor is heated to a required temperature by a heater, and thereby the target object is heated to the required temperature to perform the target processing.

[0003]

However, in the case of the above-described method, since the heating including the susceptor is performed, the heat capacity is large, and the object to be processed is simply placed on the susceptor. Therefore, the thermal connection between the susceptor and the object is not tight, and the thermal resistance is large, so it takes time to raise the temperature of the object to a predetermined temperature, which hinders shortening of work time. In addition, there is a problem that power consumption is increased due to low heat efficiency.

In particular, recently, when a large-area semiconductor substrate or thin-film semiconductor is used as in, for example, a solar cell, a problem arises in performing uniform processing over the entire area.

The present invention provides a semiconductor substrate, a semiconductor device and a solar cell, a method for manufacturing a semiconductor substrate, a method for manufacturing a thin film semiconductor, and a processing apparatus for a semiconductor substrate, which can solve such a problem. .

[0006]

A semiconductor substrate according to the present invention has a structure in which a semiconductor thin plate is integrally joined to at least one main surface of a heater substrate.

The method of manufacturing a semiconductor substrate according to the present invention is characterized in that a carbon thin film and a carbon substrate constituting a heat-resistant conductive substrate joined to the heater substrate are superposed on each other and heat-treated in a high-temperature atmosphere. A semiconductor substrate is manufactured by joining and integrating a substrate and a semiconductor thin plate.

Further, in the semiconductor device according to the present invention, a single semiconductor element or an integrated circuit is formed on at least one main surface of a heater substrate or on a semiconductor thin plate bonded to a heat-resistant conductive substrate bonded to the heater substrate. Configuration.

A solar cell according to the present invention is formed by forming a solar cell on at least one principal surface of a heater substrate or on a semiconductor thin plate joined to a heat-resistant conductive substrate joined to the heater substrate.

In the method of manufacturing a thin film semiconductor according to the present invention, a heater substrate or a heat-resistant substrate is formed by using a semiconductor substrate in which a semiconductor thin plate is bonded to a heater substrate formed of a carbon-based substrate or a carbon-based substrate bonded to the heater substrate. A step of forming a porous layer on the semiconductor thin plate by applying an electric current to the carbon-based substrate constituting the conductive substrate and performing anodization to form a semiconductor thin film by peeling the semiconductor thin plate through the porous layer; Through a peeling step, a thin film semiconductor is obtained.

In a processing apparatus according to the present invention, that is, a processing apparatus for forming a film of a semiconductor or the like on a semiconductor substrate, an oxidation processing for forming an oxide film, or the like, the wafer is bonded to both main surfaces of the heater substrate or both main surfaces of the heater substrate. A chamber for accommodating a semiconductor substrate in which a semiconductor thin plate is integrally bonded to a heat-resistant conductive substrate, and holding means for holding the semiconductor substrate in the chamber along the direction of gravity. Further, there is provided a pair of supply means which are arranged symmetrically with respect to the semiconductor substrate and supply a processing liquid or a gas for the semiconductor thin plate toward the semiconductor thin plate on both surfaces of the semiconductor substrate. The holding means holds the semiconductor substrate by sandwiching the semiconductor substrate so as to cover the exposed upper and lower ends of the heater substrate, and has a holder for supplying power to the heater substrate. The holder is provided so as to penetrate the chamber, and has a configuration in which at least a penetrating portion of the holder and a surface in the chamber are coated with an insulating seal.

According to the present invention described above, since the semiconductor thin plate is joined integrally with the heater substrate, the heating for manufacturing various semiconductor devices such as a single semiconductor element, a semiconductor integrated circuit, a solar cell, etc. is not required. Since the heating can directly heat the heater substrate, the heat capacity of the heating unit can be extremely reduced. Further, since the semiconductor thin plate is formed integrally with the heater substrate, the heat capacity of the heater substrate can be reduced. The coupling is made dense. Therefore, the temperature of the semiconductor thin plate can be quickly and accurately raised to a target temperature, and the power consumption for the heating can be effectively reduced.

Further, according to the processing apparatus of the present invention described above, the semiconductor substrate as the object to be processed has a configuration in which the semiconductor thin plates are formed on both surfaces of the heater substrate. By arranging the processing liquid or gas supply means, for example, film formation or oxidation processing on a semiconductor thin plate can be efficiently and uniformly performed.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a semiconductor substrate, a semiconductor device, a solar cell, a method of manufacturing a semiconductor substrate, a method of manufacturing a thin film semiconductor, and a processing apparatus for a semiconductor substrate according to the present invention will be described. The semiconductor substrate according to the present invention is
A configuration in which a semiconductor thin plate is integrally bonded to at least one main surface of the heater substrate, or a configuration in which a heat-resistant conductive substrate is bonded to at least one main surface of the heater substrate and the semiconductor thin plate is integrally bonded thereto.

According to the method of manufacturing a semiconductor substrate of the present invention, a carbon-based substrate constituting a heater substrate or a heat-resistant conductive substrate bonded to the heater substrate and a semiconductor thin plate are superposed and heat-treated in a high-temperature atmosphere. A semiconductor substrate is manufactured by joining and integrating a substrate and a semiconductor thin plate.

Further, the semiconductor device according to the present invention is provided on at least one main surface of the heater substrate or on a semiconductor thin plate joined to a heat-resistant conductive substrate joined to the heater substrate, that is, by the semiconductor thin plate itself or A single semiconductor element or an integrated circuit is formed, including the formed semiconductor layer.

The solar cell according to the present invention is provided on at least one principal surface of the heater substrate or on a semiconductor thin plate joined to a heat-resistant conductive substrate joined to the heater substrate, that is, the semiconductor thin plate itself or the semiconductor thin plate. A solar cell is formed including the formed semiconductor layer.

In the method of manufacturing a thin film semiconductor according to the present invention, a heater substrate made of a carbon-based substrate or a carbon-based substrate bonded to a heater substrate is used by using a semiconductor substrate having a semiconductor thin plate bonded thereto. A step of forming a porous layer on the semiconductor thin plate by applying an electric current to the carbon-based substrate constituting the conductive conductive substrate and performing anodization,
A thin film semiconductor is obtained through a peeling step of peeling the semiconductor thin plate through the porous layer to produce a semiconductor thin film.

In a processing apparatus according to the present invention, that is, a processing apparatus for forming a film of a semiconductor or the like on a semiconductor substrate, an oxidation processing for forming an oxide film, or the like, the wafer is bonded to both main surfaces of the heater substrate or both main surfaces of the heater substrate. A chamber for accommodating a semiconductor substrate in which a semiconductor thin plate is integrally bonded to a heat-resistant conductive substrate, and holding means for holding the semiconductor substrate in the chamber along the direction of gravity. Further, there is provided a pair of supply means which are arranged symmetrically with respect to the semiconductor substrate and supply a processing liquid or a gas for the semiconductor thin plate toward the semiconductor thin plate on both surfaces of the semiconductor substrate. The holding means holds the semiconductor substrate by sandwiching the semiconductor substrate so as to cover the exposed upper and lower ends of the heater substrate, and has a holder for supplying power to the heater substrate. The holder is provided so as to penetrate the chamber, and has a configuration in which at least a penetrating portion of the holder and a surface in the chamber are coated with an insulating seal.

The semiconductor thin plate in the present invention is made of Si, G
III-V group such as e, SiGe or GaAs;
It can be composed of an I-VI group compound semiconductor or the like.

The heater substrate and the semiconductor thin plate can be joined via an insulating layer. This insulating layer can be used as an interlayer insulating layer of a usual semiconductor device such as a compound of silicon and oxygen such as SiO ₂ , a compound of silicon and nitrogen such as Si ₃ N ₄ , and a compound of aluminum and oxygen such as Al ₂ O _3. It can be composed of at least one layer of various insulating seats.

The heater substrate and the heat-resistant conductive substrate can be constituted by a carbon-based substrate such as C or SiC. For example, a protective layer can be formed on the surface of a heater substrate or a heat-resistant conductive substrate made of a carbon-based substrate. This protective layer is made of a compound of silicon and carbon of another carbon-based material different from the constituent material of the carbon-based substrate, for example, S
iC, a compound of titanium and carbon such as TiC, or a compound of tantalum and carbon such as TaC can be used. Further, the heater substrate may be made of, for example, Si.

The bonding between the carbon-based substrate and the semiconductor thin plate constituting the heater substrate or the heat-resistant conductive substrate is performed by polishing the surface of the carbon-based substrate and then superposing the carbon-based substrate and the semiconductor thin plate on each other. By performing heat treatment in a high-temperature atmosphere, for example, in an inert gas, for example, N ₂ gas, the carbon-based substrate and the semiconductor thin plate can be firmly and thermally tightly bonded and integrated.

Amorphous Si or amorphous SiC is previously formed on at least one surface of the carbon-based substrate and the semiconductor thin plate which are superimposed on each other, and heat treatment is performed in a high-temperature atmosphere to recrystallize the amorphous Si or amorphous SiC. Thus, the carbon-based substrate and the semiconductor thin plate can be firmly and thermally tightly joined and integrated.

As another method, a polycrystalline Si layer is formed in advance on at least one surface of a carbon-based substrate and a semiconductor thin plate which are overlapped with each other, and this polycrystalline Si layer is formed.
The surface of the layer is polished, and then heat-treated in a high-temperature atmosphere, whereby the carbon-based substrate and the semiconductor thin plate can be firmly and thermally tightly bonded and integrated.

Further, as another method, PSG (phosphorus silicate glass), BP
SG (boron phosphorus silicate glass) or SOG
(Spin-on glass) is applied, and heat treatment is performed in a high-temperature atmosphere to solidify the PSG, BPSG or SOG, whereby the carbon-based substrate and the semiconductor thin plate can be firmly and thermally densely bonded and integrated.

In another method, a semiconductor thin plate is
The surface superposed with the carbon-based substrate is made porous to form a porous semiconductor layer, and heat treatment is performed in a high-temperature atmosphere to recrystallize the porous semiconductor layer, thereby firmly bonding the carbon-based substrate and the semiconductor thin plate. In addition, they can be thermally and densely joined and integrated.

Also in the implementation of each of these methods, an insulating layer or a protective layer made of another carbon-based material or Si different from the constituent material of the carbon-based substrate can be formed on the surface of the carbon-based substrate.

The surface of the above-described amorphous Si or amorphous SiC may be hydrophobized or hydrophilized as necessary, and then the above-described superimposition and integration of the semiconductor thin plate and the carbon-based substrate may be performed. . Also,
Also on the above-mentioned polycrystalline Si surface, the above-described semiconductor thin plate and carbon-based substrate can be integrated by superimposing and joining after performing hydrophobicity or hydrophilicity as necessary.

In the semiconductor substrate of the present invention, a current is supplied to the heater substrate to which the semiconductor thin plate is joined, or to the carbon-based substrate constituting the heat-resistant conductive substrate joined to the heater substrate and joined to the semiconductor thin plate. By anodizing, a porous layer can be formed on a semiconductor thin plate. In this case, when a protective layer for protecting the heat-resistant conductive substrate is interposed between the heat-resistant conductive substrate and the semiconductor thin plate, the protective layer has a low specific resistance, for example, SiC, TiC, T
It is preferable to be constituted by aC or the like.

Further, in the semiconductor substrate of the present invention, the semiconductor substrate is energized by using the semiconductor substrate, and the semiconductor thin plate is heated directly by heat generated from the heater substrate or via a heat-resistant conductive substrate. Then, for example, deposition of a semiconductor layer, epitaxial growth, or the like can be performed on the semiconductor thin plate.

Further, by using the semiconductor substrate of the present invention, the heater substrate is energized, and the semiconductor thin plate is heated directly by heat generated from the heater substrate or heated in an oxygen atmosphere through a heat-resistant conductive substrate. The surface of the semiconductor thin plate can be thermally oxidized to form an oxide film.

When the above-described porous layer is formed, after the formation of the porous layer, the heater substrate is energized to heat-anneal the semiconductor thin plate, and thereafter, the thin film semiconductor is peeled off from the porous layer. Before the peeling step, the semiconductor substrate is heated by energizing and heating the heater substrate to form a semiconductor film on the semiconductor thin plate,
This can be separated by a porous layer to obtain a thin film semiconductor.

Next, the semiconductor substrate according to the present invention will be described with reference to the drawings, but it goes without saying that the present invention is not limited to this example. The semiconductor substrate S according to the present invention has a required specific resistance such as a carbon-based substrate made of, for example, C or SiC or a Si substrate, as shown in a schematic sectional view of FIG. 1 or FIG. The heater substrate 1 is prepared so that Joule heat is generated when a current is applied to the heater substrate 1 by selecting a shape, and Si, Ge, SiG is applied to one or both of the main surfaces.
e, IV group semiconductors such as GaAs, III-V group, II-
It has a configuration in which a semiconductor thin plate 2 made of a group VI compound semiconductor is joined and integrated.

The surface of the heater substrate 1 is made of, for example, SiC or Ta for the purpose of preventing oxidation of the heater substrate 1 or the like.
When the resistance of the heater substrate 1 is larger than that of the semiconductor thin plate 2 or the like, the insulating layer of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ or the like having excellent heat resistance is used. The material layer 3 is coated by a well-known technique, for example, sputtering, vapor deposition, CVD (chemical vapor deposition), or the like. At this time, SiO ₂ , Si ₃
Since N ₄ and Al ₂ O ₃ are each in an amorphous shape and change in composition depending on film forming conditions,
O _X, Si _X N _y, may be a composition components such as that Al _X O _y. In the case of SiC, TaC, TiC, etc., a change in the composition is similarly allowed under the manufacturing conditions, and in this specification, these compounds are referred to including each compound slightly deviating from the stoichiometry. is there.

In FIG. 1 and FIG.
3 and FIG. 4, as shown in schematic cross-sectional views thereof, one surface or both surfaces of the heater substrate 1 is provided with, for example, C having excellent heat resistance and conductivity. , A heat-resistant conductive substrate 4 made of a carbon-based substrate such as SiC, and a semiconductor thin plate 2 bonded thereon. If necessary, the surface of the heat-resistant conductive substrate 4 may be protected or the heater substrate 1 may be protected.
And a material layer 3 for insulation from the semiconductor thin plate 2 can be coated.

The contour shape of the semiconductor substrate S according to the present invention and the heater substrate 1 thereof can be arbitrarily selected.
For example, as shown in FIGS. 5 to 7, the heater substrate can be formed in a square or rectangular shape (not shown), an H shape, a circular shape, or the like. A power supply terminal (not shown) may be connected to the end so that power is supplied between them.

In the above-described example, the material layer 3 is formed so as to cover the surfaces of the heater substrate 1 and the heat-resistant conductive substrate 4. In a case where a very little protective layer is required, for example, as shown in the schematic cross-sectional views of FIGS. ₂ , Si ₃ N ₄ , Al ₂ O
_{For example,} a material layer 3 made of an insulating layer having excellent heat resistance such as 3 may be interposed, or as shown in FIG. 10 and FIG. The above-described heat-resistant conductive substrate 4 is bonded with the material layer 3 interposed therebetween, and the semiconductor thin plate 2 can be bonded thereon. In FIG. 11, the heat-resistant conductive substrate 4
A material layer 3 of SiC, TiC, TaC, or the like, which has a relatively small specific resistance and serves as a protective layer, can be formed over the surface of the substrate.

The semiconductor thin plate 2 can be arranged so as to cover, for example, the heat-resistant conductive substrate 4 as shown in a schematic sectional view of FIG.

In the example shown in the schematic sectional view of FIG. 13, a material layer 3 serving as a protective layer which covers the surface of the heater substrate 1 and protects it from oxidation and the like is coated. This is a case where the material layer 3 of the heat-resistant insulating layer is interposed between the material layer 3 and the material layer 3. In FIG. 13, for example, portions corresponding to those in FIG.

In the configuration of FIG. 10, the heat-resistant conductive substrate 4 and the semiconductor thin plate 2 are provided on one surface of the heater substrate 1.
However, for example, the heat-resistant conductive substrate 4 and the semiconductor thin plate 2 may be symmetrically arranged on both surfaces of the heater substrate 1. In addition, in the examples of FIGS. 11 to 13, the heat-resistant conductive substrate 4 and the
Although the semiconductor thin plate 2 is arranged, it may be configured to be arranged only on one surface. However, in the case of a symmetric configuration, it is possible to effectively reduce the occurrence of distortion due to the difference in the coefficient of thermal expansion of each part.

The present invention will be described with reference to examples, but the present invention is not limited to these examples. [Embodiment 1] A description will be given with reference to FIGS. In this example, a semiconductor substrate S having a configuration in which a semiconductor thin plate 2 is bonded to both surfaces of a heater substrate 1 is manufactured. In this example, the heater substrate 1 is a carbon-based substrate,
For example, the case where the semiconductor thin plate 2 is formed of a carbon substrate and the semiconductor thin plate 2 is formed of Si is illustrated. in this case,
As shown in FIG. 14, a heater substrate 1 made of, for example, a carbon substrate is prepared, and as shown in FIG. 15, both main surfaces are polished so that both main surfaces are parallel and smooth surfaces. The heater substrate 1 is set.

As shown in FIG. 16, the surface of the heater substrate 1 is made of SiC, Ta for protecting the heater substrate 1.
A material layer 3, such as C or TiC, having an effect of preventing the heater substrate 1 from being oxidized or the like is formed and covered by, for example, a CVD (chemical vapor deposition) method.

As shown in FIG. 17, on this material layer 3,
For example, an amorphous Si (a-Si) layer 5 doped with boron of a p-type impurity is formed. Then, the surface is treated with, for example, ammonia hydrogen peroxide solution, for example, NH 4.
Washing is performed at 80 ° C. for 10 minutes using an aqueous solution of ammonia hydrogen peroxide in which ₃ OH, H ₂ O _2, and H ₂ O are set to 1: 1: 5, respectively (hereinafter, this washing is referred to as SC1 washing).
To make it hydrophilic.

On the other hand, as shown in FIG.
Are prepared. The semiconductor thin plate 2 has, for example, a (100) crystal plane formed by a CZ (Czochralski) method and obtained from a Si single crystal with a plane direction, for example, a boron-doped p-type resistivity of 0.01 to 0. .02Ω
cm of semiconductor thin plate. These semiconductor thin plates 2 are also subjected to SC1 cleaning to make them hydrophilic.

As shown in FIG. 19, these semiconductor thin plates 2 are superimposed on both surfaces of the heater substrate 1 shown in FIG. 17, respectively, and heated in a high-temperature atmosphere, for example, a high-temperature anneal is performed in an N ₂ atmosphere. By recrystallizing Si5, the semiconductor thin plate 2 and the heater substrate 1 are joined together to obtain a semiconductor substrate S according to the present invention having the semiconductor thin plate 2 having the heater substrate 1.

Next, if necessary, the surface of the semiconductor thin plate 2 is washed with, for example, dilute hydrofluoric acid to remove, for example, a surface oxide film formed during the high-temperature treatment.

In the above example, the hydrophilic treatment is performed on both the heater substrate 1 and the semiconductor thin plate 2 to be bonded to each other. However, the treatment can be performed on only one of them.

Embodiment 1 In the case where the heater substrate and the semiconductor thin plate are joined via the amorphous Si, the same joining is carried out by heating in a high-temperature atmosphere similarly using amorphous SiC instead of amorphous Si. You can also.

[Embodiment 2] A description will be given with reference to FIGS. In this example, a heat-resistant conductive substrate 4 made of a carbon-based substrate was bonded to both surfaces of a heater substrate 1 made of a Si substrate, and the semiconductor thin plate 2 was bonded via these heat-resistant conductive substrates 4. In this case, each junction is made of polycrystalline Si. in this case,
As shown in FIG. 20, a heat-resistant conductive substrate 4 made of, for example, a carbon substrate is prepared. This heat-resistant conductive substrate 4 is formed as shown in FIG.
As shown in FIG. 1, the two main surfaces are polished to make the two main surfaces parallel and smooth, and the thickness is set to a required thickness.

As shown in FIG. 22, the heat-resistant conductive substrate 4
For protecting the heat-resistant conductive substrate 4 by covering the surface of
The material layer 3 is formed of a protective layer having heat resistance such as iC, TiC, TaC or the like and capable of preventing oxidation or the like of the heat-resistant conductive substrate 4.
Coating by CVD.

As shown in FIG. 23, the heat-resistant conductive substrate 4
A polycrystalline Si layer 6 is formed on the material layers 3 on both sides of the above. The polycrystalline Si layer 6 is also made of, for example, Si doped with boron of a p-type impurity. Then, as shown in FIG. 24, the surface of this polycrystalline Si layer 6 is polished to a parallel smooth surface. Thus, two heat-resistant conductive substrates 4 are prepared.

On the other hand, as shown in FIG. 25, for example, boron-doped p-type S
A heater substrate 1 made of an i-thin plate is prepared. Then, the surface of the heater substrate 1 is thermally oxidized to form a material layer 3 for surface protection and insulation by SiO ₂ .

The surfaces of the heater substrate 1 and the heat-resistant conductive substrate 4 are subjected to SC1 cleaning in the same manner as in the above-described example to make the surfaces hydrophilic.

As shown in FIG. 26, a heat-resistant conductive substrate 4 is laminated or superposed on both surfaces of the heater substrate 1 and heated in a high-temperature atmosphere, for example, in an N ₂ atmosphere.
By performing high-temperature annealing, the heater substrate 1 and the heat-resistant conductive substrate 4 made of a carbon-based substrate are joined and integrated.

Next, as shown in FIG. 27, a polycrystalline Si layer 6 doped with, for example, boron of a p-type impurity is formed, and the surface of the polycrystalline Si layer 6 is polished as described above. To a parallel smooth surface.

On the other hand, as shown in FIG.
Are prepared. In the same manner as described above, the semiconductor thin plate 2 has a (100) crystal plane formed by, for example, the CZ (Czochralski) method and obtained from a Si single crystal and having a (100) crystal plane as a plane direction, for example, a boron-doped p-type ratio It is composed of a semiconductor thin plate having a resistance of 0.01 to 0.02 Ω · cm.

The surface of the semiconductor thin plate 2 and FIG.
7, at least one of the surfaces of the polycrystalline Si layer 6 on the heat-resistant conductive substrate 4 joined to the heater substrate 1
SC1 wash and hydrophilize.

Then, as shown in FIG. 29, the semiconductor thin plates 2 are laminated on the heat-resistant conductive substrates 4 bonded to both surfaces of the heater substrate 1, respectively, and heated in a high-temperature atmosphere, for example, N _2. A high-temperature annealing is performed in an atmosphere to join each semiconductor thin plate 2 to each heat-resistant conductive substrate 4 to obtain a semiconductor substrate S according to the present invention including the semiconductor thin plate 2 having the heater substrate 1. .

Next, if necessary, the surface of the semiconductor thin plate 2 is washed with, for example, dilute hydrofluoric acid to remove, for example, a surface oxide film or the like generated during the high-temperature treatment.

Further, the heater substrate 1 is formed by another joining method.
Bonding with the heat-resistant conductive substrate 4 or the semiconductor thin plate 2,
Alternatively, the heat-resistant conductive substrate 4 and the semiconductor thin plate 2 can be joined. Next, an embodiment of this case will be described.

[Embodiment 3] Description will be made with reference to FIGS. Also in this example, a heat-resistant conductive substrate 4 made of a carbon-based substrate was bonded to both surfaces of the heater substrate 1 made of a Si substrate, and the semiconductor thin plate 2 was bonded via the heat-resistant conductive substrate 4. Is the case. Also in this case, as shown in FIG. 30, two carbon substrates are prepared, and both main surfaces thereof are polished so that both main surfaces are parallel smooth surfaces.
A heat-resistant conductive substrate 4 having a required thickness is prepared. Then, SiC, TaC, T for protecting the heat resistant conductive substrate 4 is provided on the surface of the heat resistant conductive substrate 4.
The material layer 3 made of iC or the like is coated by, for example, a CVD method.

As shown in FIG. 31, the heat-resistant conductive substrate 4
, PSG, BPSG, S
A glass material layer 7 of any of OG is applied.

On the other hand, as shown in FIG. 32, for example, boron-doped p-type S
An i-thin heater substrate 1 is prepared, and its surface is covered with a heat-resistant insulating layer, that is, a material layer 3. This material layer 3
For example, a surface of a Si substrate is thermally oxidized to form a SiO ₂ layer, and a Si ₃ N ₄ layer is formed thereon by, for example, a CVD method.

As shown in FIG. 33, a heat-resistant conductive substrate 4 is superimposed on both sides of the heater substrate 1 with the glass material layer 7 of the heater substrate 1 side. In this state, heating in a high-temperature atmosphere, for example, The glass material layer 7 of PSG, BPSG, and SOG is solidified by performing high-temperature annealing in an N ₂ atmosphere, and the heater substrate 1 and the heat-resistant conductive substrate 4 are joined and integrated. Also in this case, the bonding surface can be washed with SC1 in advance and made hydrophilic.

As shown in FIG. 34, a polycrystalline Si layer 6 is formed on each outer surface of the heat-resistant conductive substrate 4 by the method described with reference to FIGS. This polycrystalline Si layer 6 can also be made of, for example, Si doped with boron of a p-type impurity.

The semiconductor thin plate 2 made of, for example, Si is superposed on the heat-resistant conductive substrate 4 via the polycrystalline Si layer 6. In the same manner as described above, the semiconductor thin plate 2 made of Si has, for example, a (100) crystal plane obtained from, for example, a CZ-formed Si single crystal in a plate surface direction, and has, for example, a boron-doped p-type specific resistance of 0.1 μm. 01-0.02
It is composed of a semiconductor thin plate of Ω · cm. These semiconductor thin plates 2 are also subjected to SC1 cleaning to make them hydrophilic.

As described above, in a state where the semiconductor thin plate 2 is laminated or superimposed on the heat-resistant conductive substrate 4, heating in a high-temperature atmosphere, for example, high-temperature annealing in an N ₂ atmosphere is performed. The substrate 4 and the Si semiconductor thin plate 2 can be firmly joined by the polycrystalline Si layer 6.

Next, if necessary, the surface of the semiconductor thin plate 2 is washed with, for example, dilute hydrofluoric acid to remove, for example, a surface oxide film or the like generated during the high-temperature treatment.

[Embodiment 4] Description will be made with reference to FIGS. 35 to 39. In this example, a semiconductor thin plate 2 made of a Si substrate is bonded to both surfaces of a heater substrate 1 made of a carbon-based substrate with porous Si. Also in this case, as shown in FIG. 35, a heater substrate 1 made of, for example, a carbon substrate is prepared, and as shown in FIG. 36, both main surfaces are polished to make both main surfaces parallel and smooth. The heater substrate 1 is set to have a required thickness.

As shown in FIG. 37, the surface of the heater substrate 1 is coated with, for example, SiC to protect the heater substrate 1.
It is covered with a material layer 3 coated with TaC, TiC or the like by a CVD method.

On the other hand, as shown in FIG.
Are prepared. These semiconductor thin plates 2 also have a (100) crystal plane formed by, for example, the CZ method and obtained from a Si single crystal as a plane direction and, for example, p-doped with boron.
The mold is formed of a semiconductor thin plate having a specific resistance of 0.01 to 0.02 Ω · cm. Then, a porous Si layer 8 is formed on one surface of the semiconductor thin plate 2 by anodization. This anodization can be performed by various methods. For example, “Surface Technology” Vol. 46, No. 5, p8-
13,1995 The double cell method described in “Anodic formation of porous Si” can be used. In this case, hydrofluoric acid (HF, for example, a 47 to 50% solution) and ethanol (C) are placed in each cell (tank) on the side where porous Si is formed and on the opposite side.
A 1: 1 (volume ratio) electrolytic solution of ₂ H ₅ OH and industrial ethanol (about 99.50% solution) was filled, and 10 mA / cm ² was placed between the electrode and the Si substrate arranged in each tank.
The current was supplied at a current density of 4 minutes for 4 minutes. Thus, the porous Si layer 8 is formed on one surface of the Si substrate.

In this way, each of the porous Si layers 8
As shown in FIG. 39, the two Si semiconductor thin plates 2 on which the porous Si layer 8 is formed are abutted on both sides of the heater substrate 1 and the porous Si layer 8 side is abutted. By heating in an N ₂ atmosphere, for example, the Si semiconductor thin plates 2 can be firmly bonded to both surfaces of the heater substrate 1, and the intended semiconductor substrate S according to the present invention can be obtained.

In each of the above-described examples, both the heater substrate 1 and the semiconductor thin plate 2 bonded to each other may be subjected to the hydrophilic treatment or only one of them. In each of the above-described examples, the bonding surface is made hydrophilic. However, the bonding surface may be made hydrophobic.

In each of the above examples, the semiconductor thin plate 2 is of p-type and the a-Si layer 5, the polycrystalline Si layer 6 and the like are of p-type of the same conductivity type. In the type, a
The Si layer 5, the polycrystalline Si layer 6, etc. may be of the same conductivity type as that of the n-type, and the semiconductor thin plate 2 may be made of the same conductivity type as the bonding member to stabilize the characteristics of the semiconductor thin plate 2. Can be measured.

In each of the above-described examples, the bonding of the heat-resistant conductive substrate 4 and the bonding of the semiconductor thin plate 2 to both surfaces of the heater substrate 1 are performed at the same time. However, the bonding may be performed one by one. It goes without saying that you can do it.

The bonding of the heater substrate 1, the heat-resistant conductive substrate 4, and the semiconductor thin plate 2 is made of amorphous Si,
Amorphous SiC, polycrystalline Si, PSG, BPSG,
Bonding can be performed by appropriately combining bonding using SOG or the like.

When the semiconductor thin plate 2 is arranged on both sides of the heater substrate 1 described above, the semiconductor substrate S can be formed symmetrically with respect to the heater substrate 1. 1 can be effectively prevented from being warped when heating is performed by energizing 1.

In the fourth embodiment, a semiconductor thin plate 2 on which a porous layer is formed in advance is prepared, and the semiconductor thin plate 2 and the heater base 1 are joined and integrated, but the semiconductor thin plate 2 and the heater base 1 are joined together. Later, that is, for example, using the semiconductor substrate S of the present invention according to the first embodiment, a porous layer can be formed on the semiconductor thin plate 2 by anodizing. next,
An anodizing apparatus capable of performing this anodization and a method thereof will be described with reference to a schematic configuration diagram of FIG.

This anodizing apparatus has a two-tank structure in which first and second tanks 81A and 81B made of an insulating container such as Teflon are arranged adjacent to each other, and openings are formed in adjacent parts. Between these openings, for example, Embodiment 1
The semiconductor substrate S according to the present invention shown in FIG.
The semiconductor thin plates 2 on both sides are separated into first and second tanks 81A, respectively.
And 81B. For example, an O-ring 82 is disposed between the semiconductor substrate S and the periphery of each opening of each of the tanks 81A and 81B, and the openings of the first and second tanks 81A and 81B are held in a liquid-tight manner with the semiconductor substrate S. Be sealed. An electrolytic solution 83 is accommodated in each of the tanks 81A and 81B.

As the electrolytic solution, an electrolytic solution having the same composition as the electrolytic solution used in Example 4 can be used. Meanwhile, the first
And the electrolytic solution 83 in the second tanks 81A and 81B.
In the inside, the first and second electrodes 84A and 84B selected at positions and areas opposed to the entire area of the semiconductor thin plate 2 on both surfaces of the semiconductor substrate S are arranged. These first and second electrodes 84A and 84B
Are constituted by, for example, Pt electrodes 84A and 84B plates, respectively. A power supply 85 is provided between the first and second electrodes 84A and 84B.
4A and 84B are connected so that the current supply direction, that is, the polarity can be reversed.

Then, one electrode, for example, the first electrode 84
With the A side as positive, current was applied at a current density of 7 mA / cm ² for 8 minutes, and the polarity was further inverted.
/ Cm ² for 8 minutes. In this way, a porous layer was formed on each of the semiconductor thin plates 2 of the semiconductor substrate S. In this case, not only the heater substrate 1 and the semiconductor thin plate 2 of the semiconductor substrate S, but also the material layer 3 interposed therebetween, that is, the protective layer such as SiC, TaC, TiC, etc., has conductivity. Anodization is performed to form porous layers.

In the anodizing apparatus shown in FIG.
Although a two-tank structure is used, a one-tank structure can be used. An example of this case will be described with reference to FIGS. FIG. 41 is a schematic sectional view, and FIG. 42 is a schematic top view. The semiconductor substrate S used here is, for example, the semiconductor substrate S shown in FIG. 29 obtained in the second embodiment, that is, SiC and TaC on both sides of the heater substrate 1 with the insulating material layer 3 interposed therebetween. , Ti
A heat-resistant conductive substrate 4 made of a similarly conductive carbon-based substrate coated with a conductive material layer 3 by C;
Further, it has a configuration in which a semiconductor thin plate 2 is formed. In this case, a porous layer is formed on one semiconductor thin plate 2 by anodization sequentially, and then the same anodization is performed on the other semiconductor thin plate 2, that is, a porous layer is formed.

In this example also, an insulator such as a resin is used, but one electrolytic solution layer 81 is provided, and an opening is formed at the bottom thereof. The semiconductor thin plate 2 is arranged so as to face the inside of the electrolytic solution tank 81 via an O-ring 82 arranged around. Then, the electrolytic solution 83 is stored in the electrolytic solution tank 81.

Also in this case, the electrolytic solution having the same composition as the electrolytic solution used in Example 4 can be used. In the electrolytic solution 83 in the electrolytic solution tank 81, an electrode 84 made of, for example, a Pt plate selected at a position and area facing the entire area of the semiconductor thin plate 2 of the semiconductor substrate S is arranged. On the other hand, as shown in FIG. 42, both sides of the heat-resistant conductive substrate 4 on the side disposed between the semiconductor thin plate 2 on the side in contact with the electrolytic solution 83 and the heater substrate 1, The energizing terminals 86 are connected along the left and right sides in FIG. 42). These energizing terminals 8
6 and the electrode 84, the power supply 85 conducts electricity with the heat-resistant conductive substrate 4 side as the positive electrode side, for example, at a current density of 7 mA / c.
Energize for 8 minutes at m ² . In this manner, the surface of the semiconductor thin plate 2 on the side of the semiconductor substrate S that is in contact with the electrolytic solution 83 and is energized by the heat-resistant conductive substrate 4 (the upper side in FIG. 41) is made porous. Thus, a porous layer is formed.

The semiconductor substrate according to the present invention comprises a heater substrate 1
Are provided integrally, it is possible to directly heat the heater substrate 1, that is, the semiconductor substrate S itself by energizing. Therefore, various processes involving heating can be efficiently performed. These processes can be performed simultaneously on the semiconductor thin plates 2 formed on both sides.

FIG. 43 is a schematic sectional view of an example of a processing apparatus capable of performing processing involving heating. In this apparatus, various processes such as semiconductor film formation can be performed on the semiconductor substrate S according to the present invention, in particular, the semiconductor substrate S having the semiconductor thin plates 2 on both surfaces.

This film forming apparatus has a chamber 21 made of, for example, stainless steel, and a holding means 22 for holding the semiconductor substrate S in the center of the chamber 21 so that the direction of the plate surface thereof is along the direction of gravity. Can be The semiconductor substrate S as an object to be processed is exemplified by the configuration shown in FIG. 29 obtained in Example 2, for example. The upper and lower ends of the heater substrate 1 are exposed to the outside by excluding the material layer 3 made of, for example, an insulating layer, which is covered by the upper and lower ends.

The holding means 22 is disposed above and below the inside of the chamber 21, sandwiches the upper and lower ends of the heater substrate 1, holds the semiconductor substrate S, and includes a conductive holder 22 for supplying power to the heater substrate 1. Have. The holder 22 is
It is arranged above and below the chamber 21 so as to penetrate the chamber 21. The holder 22 is covered with an insulating seal 24 to be insulated from the chamber 21 and to be sealed in a liquid-tight manner.

The chamber 21 has a symmetrical structure with respect to the semiconductor substrate S, and exhaust ports 25 are provided on both sides of the arrangement portion of the semiconductor substrate S, for example, vertically.
In the chamber 21, a pair of supply means 26 are disposed symmetrically with respect to both surfaces of the semiconductor substrate S, and supply a processing liquid or gas for the semiconductor thin plate 2 toward the semiconductor thin plates 2 on both surfaces of the semiconductor substrate S. It is arranged symmetrically with respect to the semiconductor substrate S. The supply unit 25 may be configured to have a shower nozzle that is capable of uniformly ejecting the processing liquid or the substrate, for example, facing substantially the entire area of the semiconductor thin plate 2 of the semiconductor substrate S.

An example in which a semiconductor such as Si is formed on both semiconductor thin plates 2 of the semiconductor substrate S by this processing apparatus will be described. First, a process gas such as H ₂ gas is exhausted from each exhaust port 25 by a vacuum pump.
The inside of the chamber 21 supplied from both supply means 26 can be set to a predetermined pressure, for example, a negative pressure or a normal pressure. In this example, the pressure is slightly reduced, and the power supply 27 is turned on to the pair of holders 23 for holding the heater substrate 1 of the semiconductor substrate S, thereby causing the heater substrate 1 to generate heat. Heat to ° C. In this state,
Hold for 10 minutes, then cool to 950 ° C.
₂ The raw material gas of Si such as Si
H ₄ is supplied from the nozzle of the supply means 26. Thereafter, the current supplied to the heater substrate 1 is gradually reduced to cut off the current. In this case, as shown in a schematic sectional view of FIG.
The Si semiconductor film 9 is formed on the entire surface of the semiconductor substrate S except for the portion covered by the holder 23. In this case, the semiconductor film 9 can be epitaxially grown, for example, as a single crystal film 9S in portions directly formed on the semiconductor thin plates 2 on both surfaces, and formed, for example, as a polycrystalline film 9p in other portions. You.

Further, with a configuration similar to this processing apparatus, for example, a processing apparatus for performing a process of oxidizing the surface of the semiconductor thin plate 2 on both surfaces of the semiconductor substrate S can be configured.
That is, in this case, for example, in the configuration described in FIG. 43, the same configuration as described above can be adopted except that the chamber 21 is made of quartz. The case where the surface of the semiconductor thin plate 2 on both surfaces of the semiconductor substrate S is oxidized will be described. A process gas, for example, N ₂ gas is supplied from both supply means 26 while being exhausted from each exhaust port 25 by a vacuum pump. Subsequently, O _{2 is} supplied from the supply means 26.
A power supply 27 is supplied to a pair of holders 23 for supplying the gas and holding the heater substrate 1 of the semiconductor substrate S to cause the heater substrate 1 to generate heat, and the semiconductor substrate S, that is, the semiconductor thin plate 2 is heated to, for example, 950 ° C. Then, H ₂ gas was supplied from the supply means 26, and wet oxidation of the surface of the semiconductor thin plate 2 was performed for 30 minutes. Thereafter, the supply of the H ₂ gas is stopped, and the N ₂ gas is supplied for 10 minutes.
_Two gases were supplied, and thereafter, the power supply to the heater substrate 1 was stopped. As a result, as shown in FIG. 45, the SiO ₂ oxide film 10 was formed on the entire surface of the semiconductor film 9 except for the portion sandwiched by the holders 23 of the semiconductor substrate S.

As described above, the semiconductor substrate S having a symmetrical structure with respect to the center heater substrate 1 is used, and the epitaxial growth and oxidation are performed by the processing apparatus according to the present invention having a symmetrical structure with respect to the semiconductor substrate S. By performing processing such as processing, generation of distortion such as warpage due to heating of the semiconductor substrate S can be effectively avoided.

As described above, the heating of the semiconductor substrate S according to the present invention can be performed by energizing the heater substrate 1. In this case, for example, in the first embodiment,
19 has a configuration in which the heater substrate 1 and the semiconductor thin plate 2 are substantially in a conductive state, the specific resistance of the heater substrate 1 is smaller than the specific resistance of the semiconductor thin plate 2. By being selected, the current is mainly supplied to the heater substrate 1 and can be heated.

However, as the semiconductor substrate S, FIG.
As described in FIG. 3, the semiconductor substrate S having the configuration of FIG. 29 in which the heat-resistant conductive substrates 4 are arranged on both sides of the heater substrate 1
When this is used, the mechanical strength of the semiconductor substrate S is thereby maintained, so that the thickness of the heater substrate 1 can be made sufficiently thin, and the heating efficiency can be increased.

It is needless to say that the oxidation of the semiconductor substrate S to the semiconductor thin plate 2 according to the present invention can also be performed by an oxidation treatment using a diffusion furnace used in a normal semiconductor device manufacturing process.

The above-mentioned semiconductor substrate S according to the present invention is formed by forming transistors and other various semiconductor elements on the semiconductor thin plate 2 or on a semiconductor film formed thereon, for example, by epitaxial growth. A device can be formed, and a semiconductor integrated device or a solar cell can be formed by forming a plurality of semiconductor elements.

For example, in the case of forming a semiconductor integrated circuit, flatness is desired in pattern exposure or the like in a step of using photolithography in the manufacturing process, so that the semiconductor thin plate 2 is provided only on one side of the heater substrate 1. It is preferable to use the bonded semiconductor substrate S.

[Embodiment 5] FIG. 46 shows the semiconductor thin plate 2.
1 is a cross-sectional view showing an example of a case where an integrated circuit is formed. The circuit element is formed by a normal semiconductor manufacturing process. In this example, the MOS-FET (C-MOS (insulated gate field effect transistor)
S).

In this case, an element isolation insulating layer layer 51 is formed in a portion of the semiconductor thin plate 2 where element isolation is to be performed by local thermal oxidation, so-called LOCOS. For example, a gate insulating film 52 is formed on the surface of the semiconductor thin plate 2 by thermal oxidation on the surface where the MOS-FET is formed, and a gate electrode 53 is formed thereon.
To form Next, on both sides of the semiconductor thin plate 2 below the gate electrode 53, the gate electrode 53 is formed, for example, by forming polycrystalline Si over the entire surface by a CVD method and performing pattern etching by photolithography to form the gate as a required pattern. An electrode 53 is formed.

Using the gate electrode 53 and the element isolation insulating layer 51 as a mask, source and drain regions of a conductivity type different from that of the semiconductor thin plate 2, for example, n-type, are formed on both sides below the gate electrode 53. Thereafter, a sidewall 54 is formed on the side surface of the gate electrode 53 by a known method. Using the gate electrode 53 and the element isolation insulating layer 51 as masks including the sidewalls 54, high-concentration source and drain regions are formed by ion-implanting the same n-type impurity at both sides at high concentration on both sides thereof. The low-concentration source and drain regions formed at this time form the semiconductor regions 55 to be the source and drain, respectively.
A D (Lightly Doped Drain) MOS-FET is formed.

Thereafter, a first interlayer insulating layer 56 made of, for example, SiO ₂ is deposited on the entire surface, flattened, and a first wiring layer 57 is formed thereon. This first wiring layer 57
Electrically contacts a predetermined semiconductor region 55 of the circuit element through a contact hole formed in the first interlayer insulating layer 56. Further, a second interlayer insulating layer 58 of, for example, SiO ₂ is formed on the entire surface, and a second wiring layer 59 is formed thereon. The second wiring layer 59 has a
For example, through a contact hole formed in the interlayer insulating layer 58, a predetermined portion of the first wiring layer of the lower wiring is electrically contacted. Thus, a semiconductor device in this example constitutes a semiconductor integrated circuit device.

Further, for example, using the semiconductor substrate S shown in FIG. 19 manufactured in Example 1, solar cells can be formed on both surfaces thereof. An example of this case will be described with reference to the schematic sectional view of FIG.

[Embodiment 6] In this case, for example, using the processing apparatus explained with reference to FIG. A p-type semiconductor layer 71 and a relatively high impurity concentration n-type semiconductor layer 72 are epitaxially grown and, for example, a transparent electrode is entirely formed thereon, or a transparent protective film 73 such as SiO ₂ is entirely formed. Then, a contact window is formed in a required portion, and one electrode 74 is in ohmic contact with each semiconductor layer 72 through the window. Then, a heater substrate 1 made of a carbon-based substrate is used as the other electrode. By doing so, a double-sided solar cell can be configured.

Further, a thin film semiconductor can be obtained by using the semiconductor substrate S according to the present invention. In this case, the semiconductor thin plate 2 is subjected to anodization by, for example, the anodizing apparatus described with reference to FIG. 40 or FIGS. 41 and 42 to form a porous layer, and a layer having a more fragile porosity. Or by forming a fragile cavity layer where the columnar bodies are dispersed and planted,
The separation in this fragile layer results in the formation of a thin film semiconductor. Regarding a method of forming a thin film semiconductor by forming these porous layers, see Japanese Patent Application No. 9-5 / 1993 filed by the present applicant.
No. 3354 application "Method of manufacturing thin film semiconductor, solar cell and light emitting element" and Japanese Patent Application No. 9-63135 "Semiconductor substrate and method of manufacturing semiconductor substrate and thin semiconductor"
Can be applied.

An example will be described with reference to FIGS. [Embodiment 7] In this case, for example, a semiconductor substrate S according to the present invention shown in FIG. 29 is used as shown in FIG. 48 showing only one semiconductor thin plate 2 side. For example, the semiconductor thin plate 2 is anodized by the anode device and the method described with reference to FIGS. This anodization is desirably performed in a dark place in order to suppress the occurrence of surface irregularities. First, energization is performed at a low current of 1 mA / cm ² for 8 minutes. As a result, as shown in FIG. 49, the surface layer 1 having a dense porosity of about 16% and a thickness of about 1.7 μm was formed.
2S is formed. Once the current is stopped, the current density is 7m
Apply current at A / cm ² for 8 minutes. In this case, FIG.
As shown in FIG. 0, a porosity of about 2
A 6% intermediate porosity layer 12M is formed. Further, after the current supply is once stopped, current supply is performed at a high current density of 200 mA / cm ² for 3 seconds. As a result, as shown in FIG. 51, the intermediate porosity layer 12M, that is, the intermediate porosity layer 1
A high porosity layer 1 having a porosity of about 60% higher than the intermediate porosity layer 12M
2S is formed. Thus, the porous layer 12 is formed by superimposing the surface layer 12S, the intermediate porosity layer 12M, and the high porosity layer 12H.

The porous layer 12 thus formed
Since the porosity of the intermediate porosity layer 12M and that of the high porosity layer 12H are significantly different from each other, a large strain is applied near the interface between them, and the strength near this interface becomes weak.

The above-described formation of the porous layer 12 is performed on the semiconductor thin plates 2 on both surfaces of the semiconductor substrate S.

Next, the semiconductor film 1 is formed on the porous layer 12.
3 is formed using, for example, the apparatus described with reference to FIG.
In this case, since the surface layer 12S is dense, the semiconductor film can be epitaxially grown.

Then, the carrier substrate 14 is formed on the semiconductor film.
For example, bonding of a transparent glass substrate or the like or packaging of a resin is performed, and the weakened portion of the porosity layer 12;
For example, peeling is performed at or near the porosity layer 12H. In this manner, as shown in FIG. 53, a thin-film semiconductor 15 having the semiconductor film 13 can be obtained.

For example, before this separation, as described above, various semiconductor elements, for example, a C-MOS, and a multilayer semiconductor film are sequentially formed. A semiconductor device such as a battery can be obtained.

In the case of manufacturing this solar cell, for example, a back electrode is formed on the back surface of the peeled surface generated by the peeling of the porous layer.

Incidentally, for example, the packaging proposed in Japanese Patent Application No. 8-234479 filed by the present applicant can be performed.

Further, the semiconductor substrate S after the above-mentioned peeling is
The same operation is repeated by forming a porous layer on the remaining semiconductor thin plate 2 again, or when the semiconductor thin plate 2 becomes thin, a semiconductor is formed thereon to recover its thickness. Then, the above-described operations such as formation and peeling of the porous layer can be repeated.

The present invention can be applied to various semiconductor devices, for example, various sensors and micro machines.

As described above, according to the semiconductor substrate of the present invention, the semiconductor thin plate 2 is integrated with the heater substrate 1, but the heater substrate 1 extends over at least the entire area of the semiconductor thin plate 2. With this configuration, uniform heating can be performed over the entire semiconductor thin plate 2 by heating the heater substrate 1 by energizing.

[0117]

As described above, according to the semiconductor substrate of the present invention, since the semiconductor substrate 2 has a structure in which the semiconductor substrate 2 is integrated with the heater substrate 1, the heat capacity of the heating portion of the semiconductor substrate 2 is reduced. Compared to conventional heating devices and susceptors equipped with a heater, heating can be made much smaller, and the temperature can be quickly, accurately, and uniformly raised to a target temperature. It is possible to reduce the cost, improve the yield, and save power consumption for heating, and reduce the manufacturing cost of various semiconductor devices.

Further, since the heater substrate can be arranged over the entire area of the semiconductor thin plate 2, the heating can be made more uniform.

Further, by bonding a semiconductor thin plate 2 or the like with a symmetrical structure on both surfaces of the heater substrate 1, distortion during heating can be effectively reduced.

Further, according to the processing apparatus having a symmetric structure according to the present invention, it is possible to efficiently perform various kinds of processing involving heat treatment, for example, film formation and oxidation processing, while suppressing generation of distortion. In addition, various semiconductor devices having excellent characteristics can be configured.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an example of a semiconductor substrate according to the present invention.

FIG. 2 is a schematic sectional view of an example of a semiconductor substrate according to the present invention.

FIG. 3 is a schematic sectional view of an example of a semiconductor substrate according to the present invention.

FIG. 4 is a schematic sectional view of an example of a semiconductor substrate according to the present invention.

FIG. 5 is a schematic plan view of an example of a semiconductor substrate according to the present invention.

FIG. 6 is a schematic plan view of an example of a semiconductor substrate according to the present invention.

FIG. 7 is a schematic plan view of an example of a semiconductor substrate according to the present invention.

FIG. 8 is a schematic sectional view of an example of a semiconductor substrate according to the present invention.

FIG. 9 is a schematic sectional view of an example of a semiconductor substrate according to the present invention.

FIG. 10 is a schematic sectional view of an example of a semiconductor substrate according to the present invention.

FIG. 11 is a schematic sectional view of an example of a semiconductor substrate according to the present invention.

FIG. 12 is a schematic sectional view of an example of a semiconductor substrate according to the present invention.

FIG. 13 is a schematic sectional view of an example of a semiconductor substrate according to the present invention.

FIG. 14 is a schematic sectional view of one step (part 1) of an example of the method of the present invention.

FIG. 15 is a schematic sectional view of one step (part 2) of an example of the method of the present invention.

FIG. 16 is a schematic sectional view of one step (part 3) of an example of the method of the present invention.

FIG. 17 is a schematic sectional view of one step (part 4) of an example of the method of the present invention.

FIG. 18 is a schematic sectional view of one step (part 5) of an example of the method of the present invention.

FIG. 19 is a schematic cross-sectional view of one step (part 6) of an example of the method of the present invention.

FIG. 20 is a schematic cross-sectional view of one step (part 1) of an example of the method of the present invention.

FIG. 21 is a schematic sectional view of one step (part 2) of an example of the method of the present invention.

FIG. 22 is a schematic sectional view of one step (part 3) of an example of the method of the present invention.

FIG. 23 is a schematic sectional view of one step (part 4) of an example of the method of the present invention.

FIG. 24 is a schematic sectional view of one step (part 5) of an example of the method of the present invention.

FIG. 25 is a schematic sectional view of one step (part 6) of an example of the method of the present invention.

FIG. 26 is a schematic sectional view of one step (part 7) of an example of the method of the present invention.

FIG. 27 is a schematic sectional view of one step (part 8) of an example of the method of the present invention.

FIG. 28 is a schematic sectional view of one step (part 9) of an example of the method of the present invention.

FIG. 29 is a schematic sectional view of one step (part 10) of an example of the method of the present invention.

FIG. 30 is a schematic sectional view of one step (part 1) of an example of the method of the present invention.

FIG. 31 is a schematic sectional view of one step (part 2) of an example of the method of the present invention.

FIG. 32 is a schematic cross-sectional view of one step (part 3) of an example of the method of the present invention.

FIG. 33 is a schematic sectional view of one step (part 4) of an example of the method of the present invention.

FIG. 34 is a schematic sectional view of one step (part 5) of an example of the method of the present invention.

FIG. 35 is a schematic sectional view of one step (part 1) of an example of the method of the present invention.

FIG. 36 is a schematic sectional view of one step (part 2) of an example of the method of the present invention.

FIG. 37 is a schematic sectional view of one step (part 3) of an example of the method of the present invention.

FIG. 38 is a schematic sectional view of one step (part 4) of an example of the method of the present invention.

FIG. 39 is a schematic sectional view of one step (part 5) of an example of the method of the present invention.

FIG. 40 is a schematic sectional view of an example of an anodizing apparatus for a semiconductor substrate of the present invention.

FIG. 41 is a schematic sectional view of an example of an anodizing apparatus for a semiconductor substrate of the present invention.

FIG. 42 is a schematic plan view of the anodizing apparatus of FIG. 41.

FIG. 43 is a schematic sectional view of an example of a processing apparatus for a semiconductor substrate of the present invention.

44 is a schematic sectional view of a semiconductor substrate on which a semiconductor film has been formed by the processing apparatus shown in FIG. 43;

FIG. 45 is a schematic sectional view of a semiconductor substrate on which an oxide film has been formed by the processing apparatus shown in FIG. 43;

FIG. 46 is a schematic sectional view of an example of a semiconductor device according to the present invention.

FIG. 47 is a schematic sectional view of an example of a semiconductor device according to the present invention.

FIG. 48 is a schematic sectional view of one step (part 1) of an example of the method of the present invention.

FIG. 49 is a schematic sectional view of one step (part 2) of an example of the method of the present invention.

FIG. 50 is a schematic sectional view of one step (part 3) of an example of the method of the present invention.

FIG. 51 is a schematic sectional view of one step (part 4) of an example of the method of the present invention.

FIG. 52 is a schematic sectional view of one step (part 5) of an example of the method of the present invention.

FIG. 53 is a schematic sectional view of one step (part 6) of the example of the method of the present invention;

[Explanation of symbols]

S: semiconductor substrate, 1: heater substrate, 2: semiconductor thin plate, 3
... material layer (protective layer, insulating layer), 3A ... first material layer, 3
B: second material layer, 4: heat-resistant conductive substrate, 5: amorphous Si layer, 6: polycrystalline Si layer, 7: glass material layer, 8
... porous Si layer, 9 ... semiconductor film, 10 ... oxide film, 12 ...
Porous layer, 12S: surface layer, 12M: intermediate porosity layer, 1
2H: high porosity layer, 13: semiconductor film, 14: carrier substrate,
15. Thin film semiconductor, 71, 72 Semiconductor layer, 81 Electrolyte bath, 81A First bath, 81B Second bath, 82
O-ring, 83: electrolytic solution, 84: electrode, 84A: first
Electrode, 84B: second electrode, 85: power supply, 86: energizing terminal

Claims (38)

[Claims] 1. A semiconductor substrate wherein a semiconductor thin plate is integrally joined to at least one main surface of a heater substrate. 2. The semiconductor substrate according to claim 1, wherein the semiconductor thin plate is made of silicon, germanium, a compound of silicon and germanium or a compound semiconductor. 3. The semiconductor device according to claim 1, wherein the heater substrate and the semiconductor thin plate are joined via an insulating layer.
A semiconductor substrate according to claim 1. 4. The method according to claim 1, wherein the insulating layer comprises a compound of silicon and oxygen,
4. The semiconductor substrate according to claim 3, comprising at least one layer of a compound of silicon and nitrogen and a compound of aluminum and oxygen. 5. The semiconductor substrate according to claim 1, wherein said heater substrate comprises a carbon-based substrate. 6. The semiconductor substrate according to claim 5, wherein said carbon-based substrate is made of carbon or a compound of silicon and carbon. 7. A heater substrate comprising the carbon-based substrate, wherein a protective layer is formed on a surface of the heater substrate.
A semiconductor substrate according to claim 1. 8. The method according to claim 7, wherein the protective layer on the surface of the heater substrate made of the carbon-based substrate is made of another carbon-based material or silicon different from the constituent material of the carbon-based substrate. Semiconductor substrate. 9. The semiconductor substrate according to claim 1, wherein said heater substrate is a substrate made of silicon. 10. The method according to claim 1, wherein a heat-resistant conductive substrate is bonded to at least one main surface of the heater substrate, and the semiconductor substrate is bonded via the heat-resistant conductive substrate. A semiconductor substrate as described in the above. 11. The semiconductor substrate according to claim 10, wherein said heat-resistant conductive substrate is made of a carbon-based substrate. 12. The semiconductor substrate according to claim 11, wherein a protective layer is formed on a surface of the heat-resistant conductive substrate. 13. The semiconductor substrate according to claim 11, wherein the carbon-based substrate constituting the heat-resistant conductive substrate is made of carbon or a compound of silicon and carbon. 14. The semiconductor according to claim 12, wherein the protective layer on the surface of the heat-resistant conductive substrate is made of a compound of silicon and carbon, a compound of tantalum and carbon, or a compound of titanium and carbon. substrate. 15. A semiconductor substrate comprising a heater substrate or a carbon-based substrate constituting a heat-resistant conductive substrate bonded to the heater substrate, and a heat treatment of the laminate in a high-temperature atmosphere. And a step of joining and integrating a thin plate. 16. The method according to claim 15, wherein the semiconductor thin plate is made of silicon, germanium, a compound of silicon and germanium, or a compound semiconductor. 17. After polishing the surface of the carbon-based substrate,
16. The semiconductor substrate according to claim 15, wherein the carbon-based substrate and the semiconductor thin plate are overlapped with each other, and the laminate is heat-treated in a high-temperature atmosphere to bond and integrate the carbon-based substrate and the semiconductor thin plate. Production method. 18. The method according to claim 18, wherein the carbon-based substrate and the semiconductor thin plate are
Amorphous Si or amorphous SiC is previously formed on at least one of the superposed surfaces, and heat treatment is performed in a high-temperature atmosphere to recrystallize the amorphous Si or amorphous SiC. The method according to claim 15, wherein the semiconductor substrate is bonded and integrated. 19. The method according to claim 19, wherein the carbon-based substrate and the semiconductor thin plate are
A polycrystalline Si layer is formed in advance on at least one of the superposed surfaces, the surface of the polycrystalline Si layer is polished, and then heat treatment is performed in a high-temperature atmosphere to form the carbon-based substrate and the semiconductor thin plate. 17. The method for manufacturing a semiconductor substrate according to claim 15, wherein: 20. The carbon-based substrate and the semiconductor thin plate,
PSG (phosphorus silicate glass), BPSG (boron phosphorus silicate glass) or SOG (spin-on glass) is applied to at least one of the surfaces which are overlapped with each other, and heat-treated in a high-temperature atmosphere to perform the P
The method for manufacturing a semiconductor substrate according to claim 15, wherein SG, BPSG, or SOG is solidified to bond and integrate the carbon-based substrate and the semiconductor thin plate. 21. A porous semiconductor layer is formed by making the surface of the semiconductor thin plate superimposed on the carbon-based substrate porous, and heat-treated in a high-temperature atmosphere to recrystallize the porous semiconductor layer. The method according to claim 15, wherein the carbon-based substrate and the semiconductor thin plate are joined and integrated. 22. The method according to claim 15, wherein an insulating layer is formed on a surface of the carbon-based substrate. 23. The semiconductor substrate according to claim 15, wherein a protective layer made of another carbon-based material or Si different from a constituent material of the carbon-based substrate is formed on a surface of the carbon-based substrate. Manufacturing method. 24. The method according to claim 18, wherein the step of hydrophobizing the surface of the amorphous Si or the amorphous SiC is followed by a step of laminating and joining the semiconductor substrate and the semiconductor thin plate. Of manufacturing a semiconductor substrate. 25. The semiconductor substrate according to claim 18, wherein after the surface of the amorphous Si or amorphous SiC is made hydrophilic, a step of laminating and bonding and integrating the heater substrate and the semiconductor thin plate is performed. Manufacturing method. 26. The method according to claim 19, wherein after the step of hydrophobizing the surface of the polycrystalline Si, a step of laminating and joining the heater substrate and the semiconductor thin plate is performed.
3. The method for manufacturing a semiconductor substrate according to item 1. 27. After the step of hydrophilizing the surface of the polycrystalline Si, a step of laminating and bonding and integrating the heater substrate and the semiconductor thin plate is performed.
3. The method for manufacturing a semiconductor substrate according to item 1. 28. A heater substrate to which a semiconductor thin plate is joined,
Alternatively, a porous layer is formed on the semiconductor thin plate by applying an electric current to the carbon-based substrate constituting the heat-resistant conductive substrate bonded to the heater substrate and forming the heat-resistant conductive substrate bonded to the semiconductor thin plate. Production method. 29. The semiconductor substrate according to claim 1, wherein a current is applied to the heater substrate, and the semiconductor thin plate is heated by heat generated from the heater substrate to form a film on the semiconductor thin plate. Manufacturing method of a semiconductor substrate. 30. The semiconductor substrate according to claim 10, wherein a current is applied to the heater substrate, and the semiconductor thin plate is heated by heat generated from the heater substrate to form a film on the semiconductor thin plate. Manufacturing method of a semiconductor substrate. 31. Using the semiconductor substrate according to claim 1, energizing the heater substrate, heating the semiconductor thin plate in an oxygen atmosphere by heat generated from the heater substrate, and heating the surface of the semiconductor thin plate. A method for manufacturing a semiconductor substrate, comprising oxidizing to form an oxide film. 32. Using the semiconductor substrate according to claim 10, energizing the heater substrate and heating the semiconductor thin plate in an oxygen atmosphere by heat generated from the heater substrate to heat the surface of the semiconductor thin plate. A method for manufacturing a semiconductor substrate, comprising oxidizing to form an oxide film. 33. A single semiconductor element or an integrated circuit is formed on at least one main surface of a heater substrate or on a semiconductor thin plate joined to a heat-resistant conductive substrate joined to the heater substrate. Semiconductor device. 34. A solar cell comprising a solar cell formed on at least one main surface of a heater substrate or a semiconductor thin plate bonded to a heat-resistant conductive substrate bonded to the heater substrate. 35. A carbon substrate forming the heater substrate or the heat-resistant conductive substrate by using a semiconductor substrate in which a semiconductor thin plate is joined to a heater substrate made of a carbon substrate or a carbon substrate joined to the heater substrate. It is characterized by comprising a step of forming a porous layer on the semiconductor thin plate by anodizing by applying an electric current to the substrate, and a peeling step of peeling the semiconductor thin plate through the porous layer to produce a semiconductor thin film. Of manufacturing a thin film semiconductor. 36. The method according to claim 35, wherein after the step of forming the porous layer, a step of applying heat to the heater substrate to heat and anneal the semiconductor thin plate is performed, and then the peeling step is performed. Method of manufacturing a thin film semiconductor. 37. The semiconductor device according to claim 37, wherein, before the peeling step, a current is applied to the heater substrate to heat the semiconductor substrate to form a semiconductor film on the semiconductor thin plate, and then the peeling step is performed. The method for producing a thin film semiconductor according to claim 35. 38. A chamber for accommodating a semiconductor substrate in which semiconductor thin plates are integrally bonded to both main surfaces of a heater substrate or a heat-resistant conductive substrate bonded to both main surfaces of the heater substrate, respectively, Holding means for holding the semiconductor substrate along the direction of gravity, symmetrically disposed with respect to the semiconductor substrate, and supplying a processing liquid or gas for the semiconductor thin plate toward the semiconductor thin plates on both surfaces of the semiconductor substrate A pair of supply means is provided, and the holding means holds the semiconductor substrate while sandwiching the semiconductor substrate so as to cover the exposed upper and lower ends of the heater substrate, and supplies power to the heater substrate. And a holder provided to penetrate the chamber, at least a penetrating portion of the chamber and the chamber of the holder. Processor to the semiconductor substrate on the surface of the inner insulating seal is characterized by comprising coated.