JPH11260273A - Field emission-type cold-cathode element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the degradation of yield due to the increase of an element area, accompanying the transition of a field emission-type cold-cathode element for heavy current application and to provide a structure and an assembly method which is suitable to heightened breakdown voltage. SOLUTION: A structure, capable of dealing with the transmission to large current, is built by forming a multichip structure wherein multiple cold-cathode chips 10 are arranged in the form of an array. This is an assembly method superior in workability to be required for forming the multichip structure. Additionally, a high withstand voltage field emission-type cold-cathode element can be formed by keeping a constant insulation distance between an emitter side and an anode side by forming recessed parts 7a at a part of an anode electrode 7 facing opposite to an emitter, in particular a part opposite to a gate wiring 9. Thereby a field emission-type cold-cathode element is provided for high power switching which is capable of easily coping with high withstand voltage application, controlling large current and is high in manufacturing yield and reliability.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field emission type cold cathode device, and more particularly to a field emission type cold cathode device having a high breakdown voltage used for a power switch or the like.

[0002]

2. Description of the Related Art Conventionally, field emission type cold cathode devices have been developed mainly for application to display devices.
The field emission type cold cathode device used for the display device is mainly used as a source of an electron beam for emitting a fluorescent screen, so that the required current is small and the voltage is 1 kV.
Less than or equal.

In recent years, attempts have been made to use a field emission type cold cathode device as a power switching device. At this time, the current value to be subjected to switching control ranges from several tens of amps to several ten thousand OOOA. Operation is required in a high voltage range where the voltage value also ranges from several kV to several hundred kV.

In order to allow a large current to flow, a relatively large element area is required. However, in the field emission type cold cathode element, the tip of the needle-like cathode must be extremely sharp to facilitate electron emission. No. As described above, in an element requiring a fine manufacturing process, it is extremely difficult to obtain an element having uniform characteristics over a large area, and problems in reliability and manufacturing yield are likely to occur.

Further, when a high voltage exceeding 1 kV is applied, a discharge occurs from a slight uneven portion inside the element, which causes a malfunction of the element and a voltage breakdown. In particular, when the field emission cold cathode device is an active device including a gate electrode, the gate wiring to which a control signal is applied tends to cause unevenness, and the method of arranging the gate wiring to avoid discharge from the unevenness is problematic. Had become.

In order to respond to the demand for a large field emission cold cathode device by forming a multi-chip type device using a large number of cold cathode chips, the gate electrodes of a large number of chips are required. , A complicated gate wiring is required, and it is extremely difficult to avoid discharge from the uneven portion of the gate wiring.

Therefore, it is extremely difficult to construct a field emission type cold cathode device as a multi-chip type as a power switching device, and in particular, it has not been possible to respond to a demand for a large size.

[0008]

As described above, there is a limit in increasing the current and increasing the breakdown voltage of the field emission type cold cathode device, and the possibility of using it as a switching device has been greatly limited. The present invention has been made to solve the above problems, and has as its object to provide a field emission type cold cathode device capable of controlling a large current.

[0009]

The field emission type cold cathode device according to the present invention for solving the above problems can be easily arranged by arranging a plurality of cold cathode chips in an array to form a multi-chip structure. It is characterized by having a structure capable of increasing the current.

In addition to the multi-chip structure, a concave portion is provided in a part of the anode electrode facing the emitter, particularly in a part facing the gate pad portion, and a constant insulating distance is maintained between the emitter side and the anode side. Thus, a field emission cold cathode device capable of controlling a large current and having a high withstand voltage is provided.

Specifically, a field emission cold cathode device of the present invention comprises a conductive substrate forming a cold cathode chip, a plurality of field emission emitters formed on the conductive substrate, And a continuous insulating film covering the periphery of the tip of the plurality of field emission emitters, and formed on the insulating film by using a continuous conductor film to control the current of the plurality of field emission emitters. A plurality of cold cathode chips each having a gate pad portion that is controlled collectively; a common cathode electrode of a cold cathode chip array in which the plurality of cold cathode chips are arranged in a vertical direction and a horizontal direction; A common anode electrode of the cold cathode chip array arranged to face the emitter.

Preferably, the common cathode electrode has a gate wiring line via an insulating layer between the cold cathode chip arrays along at least one of the vertical and horizontal directions of the cold cathode chip array on the cathode electrode. Are formed so as to cross the surface of the cathode electrode, and the gate pad portions are respectively connected to the gate wiring lines.

Preferably, the cold cathode chip further includes a cathode pad portion connected to a plurality of field emission type emitters on a conductive substrate on the cold cathode chip, and a common cathode electrode includes at least a cathode electrode. Along the vertical and horizontal directions of the upper cold cathode chip array, between the cold cathode chip arrays, a cathode wiring line is formed so as to cross the surface of the cathode electrode via an insulating layer, and the cathode pad The parts are respectively connected to the cathode wiring lines.

More preferably, the common anode electrode includes at least a gate pad portion of a cold cathode chip array,
And on a surface facing one of the cathode pad portions,
A feature is that a recess is formed.

Further, the field emission cold cathode device of the present invention comprises a conductive substrate forming a cold cathode chip, a plurality of field emission emitters formed on the conductive substrate, and a conductive substrate formed on the conductive substrate. And a continuous insulating film covering the periphery of the tip of the plurality of field emission emitters, and formed on the insulating film using the continuous conductor film, and collectively collect the currents of the plurality of field emission emitters. A plurality of cold cathode chips including a gate pad portion for controlling the plurality of cold cathode chips, a common cathode electrode of a cold cathode chip array in which the plurality of cold cathode chips are arranged in a vertical direction and a horizontal direction, and at least the cold cathode chip array. A concave portion is formed on a surface facing the gate pad portion, and a common anode electrode of the cold cathode chip array is provided to face the field emission type emitter.

[0016]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a diagram showing a main part of a field emission cold cathode device according to a first embodiment of the present invention. FIG. 1A is a plan view of a field emission type cold cathode device including a plurality of cold cathode chips in a multi-chip configuration. The cold cathode chips are arranged in an array on a common cathode electrode.

A common anode electrode disposed opposite to the plurality of cold cathode chips is indicated by a two-dot chain line. A side view of the anode electrode is shown by a broken line at the top of the plan view. FIG. 1B is a cross-sectional view taken along the line bb of FIG. 1A, and shows the cross-sectional structure of the cold cathode chip and the arrangement of a common cathode electrode and a common anode electrode.

The field emission type cold cathode device shown in FIG. 1 has an emitter 1 for emitting electrons, a continuous insulating film 2 provided with a minute opening at the tip of the emitter 1 and covering the periphery thereof.
A gate 3 formed on the insulating film and formed of a continuous conductive film for controlling emission of electrons from the emitter 1, a gate pad portion 4 forming a part of the gate, and a gate wiring formed thereon , A conductive substrate 5 of the cold cathode chip 10, a common cathode electrode 6 made of a conductor, and a common anode electrode 7 made of a conductor.
A gate line 8, a gate line 9 connected to the gate pad 4 d by the gate line 8, and the cold cathode chips 10 arranged on the common cathode electrode 6 in the vertical and horizontal directions. In this specification, the same reference numerals are given to corresponding parts in each explanatory diagram.

In the sectional view shown in FIG. 1B, the gate 3 and the gate pad portion 4 formed on the conductor substrate 5 with the insulating film 2 interposed therebetween are formed of a continuous conductor film. The control signal supplied from the circuit can control the emission of electrons from the plurality of emitters 1 of the cold cathode chip 10 collectively.

Conventionally, when a field emission type cold cathode device is used in a display device, the gate wiring method is completely different from that in FIG. 1, and electron emission is controlled for each pixel. And can be controlled independently. However, in the field emission type cold cathode device of the present invention, since the gate 3 is used for switching control of a large current, the gate 3 is formed continuously for each cold cathode chip 10, and at least the control signal is applied to the cold cathode chip 10. The voltage is applied as a unit.

This makes it possible to control the electron emission from each cold cathode chip 10 by the gate for each chip, for each of a plurality of chips, or for all the chips at a time. Various functions can be imparted to the switching operation of.

The multi-chip field emission type cold cathode device shown in FIG. 1 is housed in a vacuum vessel and maintained at a degree of vacuum of 10 ^-5 torr or less. The electrons emitted from the emitter are
The main circuit is energized by reaching the anode electrode 7,
The switching operation can be controlled by using the gate 3. At this time, since a large anode loss is applied to the common anode electrode 7 of the plurality of cold cathode chips 10, the anode electrode 7 is different from the display device in FIG.
As shown by the dashed line in the upper part of (a), it is formed using a metal plate that is thick and has excellent heat dissipation.

As shown in FIG. 1, a plurality of cold cathode chips are arranged in an array in the vertical and horizontal directions, a gate line is arranged between the cold cathode chip arrays, and a gate pad provided on the chip is provided. By connecting to the gate line, the gate wiring is simplified and the connection work is facilitated.

A method of assembling the gate line 9 on the cathode electrode 6 and the cold cathode chip 10 will be described in detail with reference to FIG. FIG. 2 is a cross-sectional view showing a main part on the cathode side when a plurality of cold cathode chips have a multi-chip configuration. The cold cathode chip 10 is fixed to the cathode electrode 6 using, for example, solder 11. Gate line 9 is arranged on cathode electrode 6 with insulating material 12 interposed therebetween. Here, as the insulating material, bakelite, Teflon, Pyrex glass or the like having excellent heat resistance is used.

The cold cathode chip 10 and the gate line 9 are connected by ultrasonic bonding, for example, of a thin line or ribbon of Al or Cu to the gate pad portion 4 and the surface of the gate line, respectively. For connection (not shown) from the gate line to the gate control circuit, a connection portion is separately provided to draw out the wiring.

Although FIG. 2 shows a simplified diagram in which the gate pad portion 4 and the gate line 9 are directly connected by the gate wiring 8, the ultrasonic bonding of the gate wiring is actually facilitated. In particular, the gate pad 4 in which Al, Cu, or the like is deposited on the gate pad portion 4
d (see FIG. 1B) and a gate line on the surface of which Al, Cu or the like is deposited is connected by a gate wiring 8. (The same applies to FIG. 3 to FIG. 7, FIG. 10, and FIG. 12).

Since only a voltage of at most about 100 V is applied between the emitter 1 and the gate 3 of the cold cathode chip shown in FIG. 1B, and since the emitter 1 is directly connected to the cathode electrode 6, The withstand voltage of the insulating material 12 may be about two to three times the emitter-gate voltage. However, when the element is fixed using solder or the like, the temperature may rise to 200 ° C. or higher in some cases. Therefore, it is desirable to use an insulating material such as Teflon having a heat resistance of 500 ° C. or higher.

FIG. 3 is a diagram showing a multi-chip configuration of a field emission type cold cathode device according to a second embodiment of the present invention. The multi-chip configuration of FIG. 3 is substantially the same as that described with reference to FIG. 2, except that a plurality of cold cathode chips 10 are insulated as positioning frames so as to be easily arranged in an array at predetermined positions of the cathode electrode. The material 12 is used. By using such a positioning frame, it is easy to arrange a plurality of cold cathode chips in an array on the cathode electrode 6, and it is extremely easy to assemble a multi-chip field emission cold cathode device. .

The method of assembling the multi-chip structure according to the second embodiment will be described more specifically with reference to FIG. The upper part of FIG. 3 is a cross-sectional view of a cold cathode chip having a multi-chip configuration after assembly, and FIG. 3B is a plan view of a positioning frame made of an insulating material 12 used for this assembly. The positional relationship between the two is indicated by a broken line.

As shown in FIG. 3, a positioning frame made of an insulating material 12 including a base of the gate wiring line 9 is formed.
The positioning frame is fixed to the cathode electrode 6, and the cold cathode chip 10 is fitted into a predetermined position defined by the frame using an adhesive 11 such as solder or a conductive paste, and is heat-treated. Fixed to

FIG. 3 shows a state where the insulating material 12 and the cold cathode chip 10 are in close contact with each other without any gap. However, in order to facilitate the assembling work, a certain margin is actually provided between them. It is necessary to provide. The positioning accuracy of the cold cathode chip 10 is within the range of the positioning accuracy required for bonding the gate wiring 8, and the size thereof is suitably about ± 50 μm.

Gate wiring 8 after fixing cold cathode chip
Can be performed in the same manner as in FIG. In addition,
As shown in the lower part of FIG. 3, the positioning frame made of the insulating material 12 is formed together with the gate line 9. However, when the number of elements constituting the multi-chip is relatively small, especially when there is no need to provide a gate wiring line, What is necessary is just to use the positioning frame from which the gate line 9 was removed.

Next, the structure of the positioning frame of the field emission type cold cathode device according to the third embodiment of the present invention will be described with reference to FIGS. The positioning frame of the third embodiment is almost the same as that of the second embodiment, but the fixing method to the cathode electrode 6 is different.

In FIG. 4, the positioning frame made of the insulating material 12 including the gate line 9 is attached to the conductor frame mounting base 1.
3, and a plurality of cold cathode chips 10 are bonded to the frame integrated mounting base 13 at predetermined positions using solder 11.

Next, the gate pad portion 4 and the gate line 9 are connected by the gate wiring 8. With such a configuration,
Since the assembling work of the cold cathode chip is performed based on the frame integrated mounting base, workability is greatly improved.

Subsequently, the frame-integrated mounting base to which the plurality of cold cathode chips are bonded is bonded to the common cathode electrode 6 using the solder 11. Note that a conductive paste or the like may be used as an adhesive instead of the solder 11.

In FIG. 5, similarly to FIG. 4, a frame integrated mounting base to which a plurality of cold cathode chips are bonded is a metal screw 1
4 screws the cathode electrode 6. Depending on the use state of the field emission type cold cathode device, the temperature of the device may increase during operation. At this time, due to the difference in the coefficient of thermal expansion between the frame-integrated mounting base 13 and the cathode electrode 6, stress is applied to the solder 11. As a result, the element may be broken due to cracks or the like.

If the fixing method by screwing as shown in FIG. 5 is employed, even if the thermal expansion coefficients of the frame-integrated mounting base 13 and the cathode electrode 6 are different, the stress is alleviated and the element can be prevented from being broken. Incidentally, the soldering between the cold cathode chip 10 and the frame-integrated mounting base 13 or the cold cathode chip and the cathode electrode 6 shown in FIGS. 2 and 3 has a small bonding area, so that the stress due to the difference in thermal expansion coefficient is small. The effect can be ignored.

Next, a fourth embodiment of the present invention will be described with reference to FIG. FIG. 6B is a plan view of a field emission cold cathode device having a multi-chip configuration according to the fourth embodiment.
FIG. 6 (a) shows an aa cross section thereof. FIG.
The field emission type cold cathode device shown in FIG. 1 includes, in addition to the gate pad portion 4, a cathode pad portion 4a connected to an emitter (not shown) on the cold cathode chip 10.

As shown in FIG. 1, the emitter 1 of the cold cathode chip 10 is electrically connected to the conductor substrate 5, and the conductor substrate 5 is electrically connected to the cathode electrode 6. Is considered unnecessary, for example, when the emitter 1 is formed by using a method of finely processing a silicon substrate, it is necessary to provide a separate cathode lead line because the series resistance of the silicon substrate cannot be ignored. is there.

In the plan view of FIG. 6B, a gate line 9 is arranged at the center in the vertical direction, and cathode lines 15 are arranged on both sides thereof. Each cold cathode chip 10 includes a gate pad section 4 and a cathode pad section 4a, respectively, and is connected to the gate line 9 and the cathode line 15 using a gate wiring 8 and a cathode wiring 8a.

At this time, the cathode wiring 8a may be directly connected to the cathode electrode 6 without providing a cathode line. For example, as described in the third embodiment (FIGS. 4 and 5), Pre-insulating multiple cold cathode chips with insulating material 1
After assembling using the frame made of 2 and the frame-integrated mounting base 13, it is only necessary to adhere or fix to the cathode electrode 6, so that the assembling work is easy and the productivity can be greatly improved.

Further, the features of the method for assembling the cold cathode device according to the fourth embodiment will be described in detail. FIG. 6A is a sectional view taken along line aa of FIG. In FIG. 6B, the frame made of the insulating material 12 shown in FIG. 3 is a horizontally long insulating material 12 that defines a vertical chip interval between the plurality of cold cathode chips 10.
a, and a vertically long insulating material 12b which is a base insulating material of the gate line and the cathode line and defines a horizontal chip interval of the plurality of cold cathode chips 10.

The insulating material 12a is previously formed on the cathode electrode 6.
, Which is used to define the horizontal arrangement of the cold cathode chip array. After arranging the cold cathode chips between the horizontally long insulating members 12a, the metal plate forming the gate line and the metal plate forming the cathode line are placed on the vertically long insulating member 12b, and the cathode is placed together with the insulating member 12b. Screw it to the electrode 6.

As shown in the cross-sectional view taken along the line aa of FIG. 6A, the insulating material 12b is provided on both sides or on one side of the cold cathode chip 10.
Equipped with an overhang to hold the rim from above. Metal screw 1
The vertical arrangement of the plurality of cold cathode chips is defined by screwing the cathode line or the gate line using the 4 or the insulating screw 14a, and the cold cathode chips are crimped to the cathode electrode 6.

At this time, since the metal screw 14 is used for screwing the cathode line 15 and the cathode electrode 6, the cathode line 15 is securely connected to the cathode electrode 6 by the screwing. Since it is not necessary to separately provide a wiring for connecting the electrode and the cathode electrode 6, the area efficiency is improved. Since the insulating screw 14a is used for screwing the gate line 9, the withstand voltage between the gate and the cathode is ensured.

By using the assembling method of the fourth embodiment, a plurality of cold cathode chips can be easily arranged in an array, and each cold cathode chip is elastically pressed by the overhanging portion of the insulating material 12b. Therefore, compared to the case of fixing with an adhesive such as solder, there is no possibility that chip peeling failure due to heat generation during operation and a difference in thermal expansion coefficient occurs.

Next, a fifth embodiment of the present invention will be described with reference to FIG. FIG. 7 shows the connection between the gate pad portion 4 and the gate line 9 using the gate wiring 8 or the connection between the cathode pad portion and the cathode line using the cathode wiring, for example, by connecting each connection point to the ultrasonic wave of the Al ribbon. If the connection is made by bonding, a sharp cut of the Al ribbon occurs at each connection point, and if a high voltage is applied between the anode and the cathode, the electric field concentrates on the cut and discharges. This causes voltage breakdown and extra electron emission from sources other than the emitter. The concentration of the electric field in such a cold cathode chip is not limited to the cut portion of the gate wiring, but may occur in all the convex portions including the ribbon and the wiring itself.

FIG. 7 shows an example in which a passivation agent 16 is applied to each connection point to protect the connection points in order to avoid discharge at the connection points. As the passivation agent, an insulative one is excellent in workability, and by applying this, the electrolytic strength of the coated surface can be reduced in inverse proportion to the relative dielectric constant.

Next, a sixth embodiment of the present invention will be described with reference to FIGS. FIG. 8 is a cross-sectional view of the cold cathode chip 10 for explaining a measure for avoiding the above-described discharge phenomenon and avoiding the phenomenon.

As described above, when a high voltage is applied between the cathode electrode and the anode electrode, a sufficient insulation distance must be maintained between the two as shown by the arrows in the figure. As compared with the normal surface of the cold cathode chip 10 including the emitter 1, irregular projections including a cut portion of the gate wiring are generated in a portion where the gate pad portion 4 overlaps the gate pad 4d and the gate wiring 8.

It is extremely effective to provide the anode electrode 7 with the concave portion 7a in order to avoid the discharge from the projecting portion. In this way, if the insulation distance from the tip of the protrusion on the gate pad to the surface of the opposing recess is set to be equal to or greater than the insulation distance on the normal surface of the cold cathode chip 10 shown on the left side of FIG. -Since a sufficient insulation distance is maintained over the entire surface between the anode electrodes, unnecessary discharge from other than the emitter 1 can be avoided.

At this time, if the irregular projection on the gate pad portion 4 is further covered with a passivation agent, it goes without saying that it is more effective. In the above description, the gate pad portion 4 has been described as an example, but discharge from the cathode pad portion 4a can be avoided in the same manner. FIG. 9 is a three-view drawing showing the formation of the concave portion 7a in comparison with the structure of the cold cathode chip 10 and the anode electrode 7.

Next, the seventh embodiment of the present invention will be described with reference to FIGS.
An embodiment will be described. In FIG. 10, a groove-shaped concave portion is provided in the anode electrode 7 along the gate line 9 mainly to avoid discharge from the gate wiring 8. This makes it possible to maintain the insulation distance from the uppermost part of all the gate wirings to the surface of the opposing concave part.

Similarly, by providing a groove-shaped recess in the anode electrode 7 along the cathode line 15, unnecessary discharge from the uppermost portion of all the cathode wires can be avoided. In addition, as shown in FIG. 11, if the corner portion of the concave portion 7a is processed to have a curvature like 7b, it is possible to prevent the corner portion generated in the anode electrode due to the formation of the concave portion from becoming a new discharge power source. Can be.

Next, an eighth embodiment of the present invention will be described with reference to FIG. FIG. 12 is a plan view showing the structure of a field emission cold cathode device in which gate lines 9 and cathode lines 15 are alternately arranged, similarly to FIG. The opposed anode electrode 7 is indicated by a two-dot chain line.

As shown by the broken line in the upper part of FIG. 12, a groove-shaped recess 7a is formed in the anode electrode by the gate pad portion 4, the gate wire 8, the cathode pad portion 4a, and the cathode wire 8
a is formed in a region opposed to a.

Thus, the gate pad portion 4, the gate wire 8, the cathode pad portion 4a, and the cathode wire 8a
Unnecessary discharge from the battery can be avoided. The present invention is not limited to the above embodiment. In addition, various modifications can be made without departing from the spirit of the present invention.

[0059]

As described above, according to the field emission type cold cathode device of the present invention, a large current can be obtained by arranging a large number of cold cathode chips in an array to form a multi-chip structure. be able to. At this time, an assembling method excellent in workability for easily arranging a large number of cold cathode chips in an array was shown.

Further, a recess is provided in a part of the anode electrode facing the emitter, particularly in a part facing the gate wiring,
By maintaining a certain insulation distance between the emitter side and the anode side, a high breakdown voltage field emission cold cathode device could be obtained.

As described above, it is possible to provide a field emission type cold-cathode device for a power switch, which can easily achieve a high breakdown voltage and can control a large current and has a high production yield and high reliability. .

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a field emission type cold cathode device according to a first embodiment of the present invention, and FIG.
(B) is a sectional view thereof.

FIG. 2 is a sectional view showing a method of assembling the cold cathode chip according to the first embodiment of the present invention.

FIG. 3 is a sectional view showing a method of assembling a cold cathode chip according to a second embodiment of the present invention and a plan view showing a structure of a positioning frame.

FIG. 4 is a sectional view showing a method of assembling a cold cathode chip according to a third embodiment of the present invention.

FIG. 5 is a sectional view showing another method of assembling the cold cathode chip according to the third embodiment of the present invention.

FIG. 6 is a diagram showing a configuration of a field emission type cold cathode device according to a fourth embodiment of the present invention, and (a) is a cross-sectional view thereof.
(B) is a plan view thereof.

FIG. 7 is a diagram showing a protection state by a passivation agent according to a fifth embodiment of the present invention.

FIG. 8 is a diagram showing a cross-sectional shape of a concave portion of an anode electrode according to a sixth embodiment of the present invention.

FIG. 9 is a diagram showing a detailed structure of a concave portion of an anode electrode according to a sixth embodiment of the present invention.

FIG. 10 is a diagram showing a structure of a concave portion of an anode electrode according to a seventh embodiment of the present invention.

FIG. 11 is a diagram showing another structure of the concave portion of the anode electrode according to the seventh embodiment of the present invention.

FIG. 12 is a diagram showing a structure of a concave portion of an anode electrode according to an eighth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Emitter 2 ... Insulating film 3 ... Gate 4 ... Gate pad part 4a ... Cathode pad part 4d ... Gate pad 5 ... Conductive substrate 6 ... Cathode electrode 7 ... Anode electrodes 7a and 7b ... Concave part 8 ... Gate wiring 8a ... Cathode wiring 9 ... Gate line 10 ... Cold cathode chip 11 ... Solder 12 ... Insulating material 12a ... Insulating material long in the horizontal direction 12b ... Insulating material long in the vertical direction 13 ... Frame mounting base 14 ... Metal screw 14a ... Insulating screw 15 ... Cathode line 16 … Passivation agent

Claims (5)

[Claims] A conductive substrate forming a cold cathode chip; a plurality of field emission emitters formed on the conductive substrate; and a plurality of field emission type emitters formed on the conductive substrate. A continuous insulating film covering the periphery of the tip of the emitter, a gate pad portion formed on the insulating film using a continuous conductive film, and collectively controlling the currents of the plurality of field emission emitters; A plurality of cold cathode chips each comprising: a plurality of cold cathode chips; a common cathode electrode of a cold cathode chip array in which the plurality of cold cathode chips are vertically and horizontally arranged; and a plurality of cold cathode chips arranged so as to face the field emission emitter. And a common anode electrode of the cold cathode chip array. 2. The common cathode electrode has an insulating layer between at least one of the cold cathode chip arrays along a longitudinal direction and a horizontal direction of the cold cathode chip array on the cathode electrode. 2. The field emission cold cathode device according to claim 1, wherein a gate wiring line is formed so as to cross the surface of the cathode electrode, and the gate pad portions are respectively connected to the gate wiring lines. 3. The cold cathode chip further includes a cathode pad portion connected to a plurality of field emission emitters on the conductive substrate on the cold cathode chip, and the common cathode electrode includes at least the cathode pad. Along the vertical or horizontal direction of the cold cathode chip array on the cathode electrode, a cathode wiring line is formed between the cold cathode chip arrays via an insulating layer so as to cross the surface of the cathode electrode. The field emission cold cathode device according to claim 1, wherein the cathode pad portions are connected to the cathode wiring lines, respectively. 4. The common anode electrode has a recess formed on at least a surface of the cold cathode chip array facing at least one of the gate pad portion and the cathode pad portion. Item 5. A field emission cold cathode device according to any one of Items 1 and 3. 5. A conductive substrate for forming a cold cathode chip, a plurality of field emission emitters formed on the conductive substrate, and a plurality of field emission type emitters formed on the conductive substrate. A continuous insulating film covering the periphery of the tip of the emitter, a gate pad portion formed on the insulating film using a continuous conductive film, and collectively controlling the currents of the plurality of field emission emitters; A plurality of cold cathode chips including: a plurality of cold cathode chips, a common cathode electrode of a cold cathode chip array in which the plurality of cold cathode chips are arranged in a vertical direction and a horizontal direction, and a surface facing at least a gate pad portion of the cold cathode chip array. And a common anode electrode of the cold-cathode chip array disposed so as to face the field emission type emitter. .