JPH11251590A5 - - Google Patents

Info

Publication number
JPH11251590A5
JPH11251590A5 JP1998062336A JP6233698A JPH11251590A5 JP H11251590 A5 JPH11251590 A5 JP H11251590A5 JP 1998062336 A JP1998062336 A JP 1998062336A JP 6233698 A JP6233698 A JP 6233698A JP H11251590 A5 JPH11251590 A5 JP H11251590A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998062336A
Other languages
Japanese (ja)
Other versions
JP3738127B2 (ja
JPH11251590A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP06233698A priority Critical patent/JP3738127B2/ja
Priority claimed from JP06233698A external-priority patent/JP3738127B2/ja
Publication of JPH11251590A publication Critical patent/JPH11251590A/ja
Publication of JPH11251590A5 publication Critical patent/JPH11251590A5/ja
Application granted granted Critical
Publication of JP3738127B2 publication Critical patent/JP3738127B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP06233698A 1998-02-26 1998-02-26 高耐圧半導体デバイス Expired - Lifetime JP3738127B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06233698A JP3738127B2 (ja) 1998-02-26 1998-02-26 高耐圧半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06233698A JP3738127B2 (ja) 1998-02-26 1998-02-26 高耐圧半導体デバイス

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005273382A Division JP4294016B2 (ja) 2005-09-21 2005-09-21 半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JPH11251590A JPH11251590A (ja) 1999-09-17
JPH11251590A5 true JPH11251590A5 (enrdf_load_stackoverflow) 2005-04-07
JP3738127B2 JP3738127B2 (ja) 2006-01-25

Family

ID=13197195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06233698A Expired - Lifetime JP3738127B2 (ja) 1998-02-26 1998-02-26 高耐圧半導体デバイス

Country Status (1)

Country Link
JP (1) JP3738127B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635926B2 (en) * 2000-08-30 2003-10-21 Shindengen Electric Manufacturing Co., Ltd. Field effect transistor with high withstand voltage and low resistance
JP2002246595A (ja) * 2001-02-19 2002-08-30 Shindengen Electric Mfg Co Ltd トランジスタ
JP4088063B2 (ja) * 2001-11-14 2008-05-21 株式会社東芝 パワーｍｏｓｆｅｔ装置
JP3973934B2 (ja) * 2002-03-15 2007-09-12 株式会社東芝 高耐圧半導体装置
JP5037476B2 (ja) * 2008-11-13 2012-09-26 三菱電機株式会社 半導体装置
JP6381101B2 (ja) * 2013-12-09 2018-08-29 富士電機株式会社 炭化珪素半導体装置

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