JPH11251304A - Plasma treating system and method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma treating system where plasma treating is easily performed only on a specified part of an object to be treated, the object to be treated can be continuously treated and treating time can be shortened. SOLUTION: In this plasma treating system, a cylindrical reaction tube 2 having an outside electrode 1, and an inside electrode 3 arranged inside the reaction tube 2 are installed. A cooling means is arranged on at least one out of the outside electrode 1 and the inside electrode 3. Inert gas or mixture gas of inert gas and reactive gas is introduced in the reaction tube 2, an AC electric field is applied across the outside electrode 1 and the inside electrode 3, glow discharge is generated in the reaction tube 2 under atmospheric pressure, and plasma jet 65 is spouted from the reaction tube 2. Carrying equipment 23 carrying the object 7 to be treated to a position to which the plasma jet 65 is spouted is installed. When plasma is generated by a high frequency AC under atmospheric pressure, temperature rise of the outside electrode 1 or the inside electrode 3 can be restrained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to cleaning of foreign substances such as organic substances present on the surface of an object to be treated, peeling of resist, improvement of adhesion of an organic film, reduction of metal oxide, and the like.
The present invention relates to a plasma processing system including a plasma processing apparatus for generating plasma used for plasma processing such as film formation and surface modification, and a plasma processing method using the same, and requires precise bonding. It is applied to cleaning of the surface of an electronic component.

[0002]

2. Description of the Related Art Conventionally, attempts have been made to perform plasma processing under atmospheric pressure (for example, see Japanese Patent Application Laid-Open No. 2-1517).
No. 1, JP-A-3-241739 and JP-A-1-241.
No. 306569). FIG. 21 shows a conventional plasma processing apparatus. Reference numeral 50 denotes a reaction tank in which an upper electrode 51 and a lower electrode 52 are arranged to face each other. An insulator 53 is mounted on the upper surface of the reaction tank 50, and an upper electrode 51 and an AC power supply 54 are connected by a wiring 62 penetrating the insulator 53. In addition, AC power supply 5
4 is grounded. An insulator 55 is mounted on the lower surface of the reaction tank 50, and the lower electrode 52 is grounded by a wiring 61 penetrating the insulator 55. On the upper surface of the lower electrode 52, a solid dielectric 59 is provided. Further, a gas inlet 56 is provided at an upper portion of the reaction tank 50, and a gas outlet 57 is provided at a lower portion of the reaction tank 50. Then, the object 7 is placed on the solid dielectric 59, and a plasma generating gas is introduced from the gas inlet 56, and an alternating current is applied between the upper electrode 51 and the lower electrode 52 to convert the plasma generating gas into plasma. By,
The plasma processing of the workpiece 7 is performed.

[0003]

In the above-described plasma processing apparatus, it is difficult to perform the plasma processing only on a specific portion of the processing object 7, and moreover, the processing objects 7 are put into the reaction tank 50 one by one. There is a problem that only a so-called batch process for performing a plasma process can be performed, and a long processing time is required.

The present invention has been made in view of the above points, and it is easy to perform plasma processing only on a specific portion of an object to be processed, and further, it is possible to continuously process the object to be processed, thereby reducing the processing time. It is an object of the present invention to provide a plasma processing system and a plasma processing method that can be shortened.

[0005]

According to a first aspect of the present invention, there is provided a plasma processing system comprising: a tubular reaction tube provided with an outer electrode; and an inner electrode disposed inside the reaction tube.
A cooling means is provided on at least one of the outer electrode 1 and the inner electrode 3, and an inert gas or a mixed gas of an inert gas and a reactive gas is introduced into the reaction tube 2. A glow discharge is generated inside the reaction tube 2 under atmospheric pressure by applying an AC electric field between the inner electrode 3 and the inner electrode 3. And a transport device 23 for transporting the workpiece 7 to a predetermined position.

According to a second aspect of the present invention, in addition to the configuration of the first aspect, the XY table 99 or the XYZ table holding the workpiece 7 at a position where the plasma jet 65 is blown out. Is provided on the transfer device 23, and the control device 48 is configured to move the XY table 99 or the XYZ table so that the plasma jet 65 is blown out to the processing target portion 13 of the processing target 7. is there.

A plasma processing system according to a third aspect of the present invention is characterized in that, in addition to the structure of the first or second aspect, means for moving the reaction tube 2 two-dimensionally or three-dimensionally is provided. Is what you do.

According to a fourth aspect of the present invention, there is provided the plasma processing method, wherein the inner electrode is disposed inside the cylindrical reaction tube provided with the outer electrode, and at least one of the outer electrode and the inner electrode is provided. Cooling means is provided, an inert gas or a mixed gas of an inert gas and a reaction gas is introduced into the reaction tube 2, and an AC electric field is applied between the outer electrode 1 and the inner electrode 3. Generates a glow discharge inside the
While blowing out the plasma jet 65 from the reaction tube 2,
The workpiece 7 is located at a position where the plasma jet 65 is blown out.
Is transported.

According to a fifth aspect of the present invention, in addition to the configuration of the fourth aspect, the XY table 99 or the XYZ table provided in the transfer device 23 at a position where the plasma jet 65 is blown out is provided. The XY table 99 or X is held so that the processing object 7 is held and the plasma jet 65 is blown out to the processing target portion 13 of the processing target 7
The YZ table is moved.

[0010]

Embodiments of the present invention will be described below.

FIG. 2 shows a plasma processing apparatus A used in the present invention.
An example is shown below. The reaction tube 2 is made of an insulating material (dielectric material) and is formed in a cylindrical shape. At the lower end, a converging portion 20 having a tapered structure narrowed so that the diameter becomes smaller toward the lower side. At the same time, an outlet 21 is provided on the lower surface of the converging section 20 which is the lower end surface of the reaction tube 2. In the case where the diameter of the outlet 21 is formed to be substantially the same as the diameter of the reaction tube 2 without providing the focusing section 20 as described above, when the flow rate of the plasma jet 65 blown out from the outlet 21 is to be increased, The space between the electrode 1 and the inner electrode 3 must be reduced to reduce the volume of the discharge space 22, which makes it difficult to cool the outer electrode 1 and the inner electrode 3. By providing the focusing portion 20 having a smaller diameter than the diameter, the flow rate of the plasma jet 65 can be increased without reducing the volume of the discharge space 22, and the plasma processing of the processing target 7 can be performed efficiently. .

The opening area of the outlet 21 of the plasma processing apparatus A shown in FIG. Outlet 21
If the opening area is too small than the above range, the processing range of the plasma jet 65 to be blown out becomes too small, and the plasma processing of the processing target 7 takes a long time. If the opening area of the plasma jet 65 is larger than the above range,
May be too large to perform local plasma processing on the workpiece 7.

A gas introduction pipe 70 is provided at an upper portion of the reaction pipe 2 so as to protrude therefrom. The dielectric constant of the insulating material forming the reaction tube 2 is an important factor in lowering the temperature of the discharge space 22 (shown by oblique lines in FIG. 2), and it is preferable to use an insulating material having a dielectric constant of 2000 or less. When the dielectric constant of the insulating material of the reaction tube 2 exceeds 2,000, the voltage applied to the space between the outer electrode 1 and the inner electrode 3 increases, but instead the voltage applied to the discharge space 22 between the outer electrode 1 and the inner electrode 3 increases. Plasma temperature (gas temperature) may increase. Although the lower limit of the dielectric constant of the insulating material of the reaction tube 2 is not particularly limited, it is 2, and if it is smaller than 2, the alternating current applied between the outer electrode 1 and the inner electrode 3 in order to maintain the discharge. The voltage must be increased, so that the power consumption in the discharge space 22 between the outer electrode 1 and the inner electrode 3 increases, and the discharge space 22
There is a possibility that the temperature of the plasma at the temperature rises.

Specific examples of the insulating material forming the reaction tube 2 include glassy materials such as quartz, alumina, and partially stabilized zirconium yttria, and ceramic materials. Further, the reaction tube 2 can be formed of magnesia (MgO) alone or an insulating material containing magnesia, whereby the glow discharge can be stabilized. This is because magnesia has a high secondary electron emission coefficient, so that ions in the plasma are generated on the surface (inner surface) of the reaction tube 2.
When the collision occurs, a large amount of secondary electrons are emitted from the surface of the reaction tube 2, and the secondary electrons are accelerated by the sheath formed on the surface of the reaction tube 2 to ionize the plasma generating gas. As a result, it is inferred that the stabilization of the discharge is maintained.

An outer electrode 1 made of metal is provided around the entire periphery of the reaction tube 2 in the upper portion of the focusing section 20. The metal material of the outer electrode 1 is preferably a material having high thermal conductivity, which improves the heat dissipation of the outer electrode 1 and makes it possible to achieve uniform discharge. Specifically, as the metal material of the outer electrode 1, copper, aluminum,
Brass, stainless steel having high corrosion resistance, or the like can be used. The outer electrode 1 can be formed in a plate shape or a mesh shape (net shape).

The roughness of the surface of the outer electrode 1 on the side of the reaction tube 2 can be set to an arithmetic average roughness of 10 to 1000 μm, whereby the discharge in the discharge space 22 can be made uniform. it can. This is microscopically,
This is considered to be because a very fine aggregate of microdischarges was formed and transfer to the arc was hindered. If the surface roughness of the outer electrode 1 is less than 10 μm,
Discharge may be difficult, and if the surface roughness of the outer electrode 1 exceeds 1000 μm, non-uniform discharge may occur. As a process for roughening the surface of the outer electrode 1 in this way, physical means such as sandblasting can be employed. The arithmetic average roughness Ra (μm) when the surface roughness is expressed in the form of y = f (x) is JIS B 0
601 is defined by the following equation (1).

[0017]

(Equation 1)

Inside the reaction tube 2, an inner electrode (center electrode) 3 is provided so as to penetrate the center of the reaction tube 2 vertically. The inner electrode 3 has a substantially circular cross section, and its diameter (outer diameter) is preferably set to 1 to 20 mm. If the diameter of the inner electrode 3 is less than 1 mm, the surface area of the inner electrode 3 facing the discharge space 22 becomes too small, so that the discharge becomes difficult to occur, and there is a possibility that the plasma cannot be generated sufficiently. When the diameter of 3 exceeds 20 mm, the size of the reaction tube 2 and the outer electrode 1 must be relatively increased, and the size of the apparatus may be increased. This inner electrode 3
Is provided so as to protrude from the upper side of the converging section 20 to the upper side of the reaction tube 2, and is supported by a plurality of supports 24 inside the reaction tube 2. Inside the reaction tube 2, a space between the outer electrode 1 and the inner electrode 3 is formed as a discharge space 22 so as to surround the inner electrode 3.

The distance from the lower end of the discharge space 22 to the outlet 21, that is, the distance from the lower end of the outer electrode 1 or the inner electrode 3 to the outlet 21,
Is preferably set to 20 mm or less.
If the distance exceeds 20 mm, the plasma jet 65 cannot be sprayed on the processing target 7 before extinguishing the highly active living plasma active species (radicals, ions, etc.). There is a risk that the processing capacity will be reduced. Therefore, by setting the distance from the lower end of the discharge space 22 to the outlet 21 to 20 mm or less, the plasma jet 6 can be discharged from the outlet 21 before the live active plasma active species is extinguished.
5 can be blown out and sprayed on the workpiece 7, and the plasma processing of the workpiece 7 can be enhanced. The smaller the distance from the lower end of the discharge space 22 to the outlet 21, the better, so the lower limit is 0.

The distance between the inner surface of the outer electrode 1 and the outer surface of the inner electrode 3 (the width of the discharge space 22) is preferably set to 1 to 10 mm. If this distance is less than 1 mm, the distance between the outer electrode 1 and the inner electrode 3 may be so small that stable discharge may not be obtained.
If the distance exceeds 0 mm, the distance between the outer electrode 1 and the inner electrode 3 is too large, and the applied power must be increased.
Also, there is a possibility that stable discharge cannot be obtained due to an increase in the temperature of the inner electrode 3.

The inner electrode 3 is formed as a double tube composed of an electrode body tube 25 and a supply tube 26. The electrode body tube 25 is formed in a hollow rod shape whose upper and lower surfaces are closed. The supply pipe 26 having a diameter smaller than that of the electrode main pipe 25 extends from the lower part of the electrode main pipe 25 so as to penetrate the center of the electrode main pipe 25.
Electrode body tube 2
The portion protruding upward from 5 is formed as a supply unit 28. Then, inside the inner electrode 3, the electrode body tube 25
A flow path portion 29 communicating with the discharge pipe portion 27 is formed between the discharge pipe portion 27 and the supply pipe 26. The electrode body tube 25 and the supply tube 26 are preferably formed of the same metal material as the outer electrode 1.
It is preferable that the surface is roughened in the same manner as described above.

In order to stabilize the discharge in the discharge space 22, the surface of the electrode body tube 25 of the inner electrode 3 is preferably coated with a coating of an insulating material (dielectric material). Further, the dielectric constant of the insulating material used in this coating is preferably 2000 or less. When the dielectric constant of the insulating material exceeds 2000, the voltage applied to the space between the outer electrode 1 and the inner electrode 3 is increased. In addition, the temperature (gas temperature) of the plasma in the discharge space 22 between the outer electrode 1 and the inner electrode 3 may increase. Although the lower limit of the dielectric constant of the insulating material is not particularly limited, it is 2, and if it is smaller than 2, the outer electrode 1 is required to maintain discharge.
The AC voltage applied between the outer electrode 1 and the inner electrode 3 must be increased, which increases the power consumption in the discharge space 22 between the outer electrode 1 and the inner electrode 3 and increases the discharge space 2
The temperature of the plasma in 2 may rise.

Specific examples of the insulating material used for coating the inner electrode 3 include glassy materials such as quartz, alumina, and partially stabilized zirconium yttria, and ceramic materials. In addition, alumina,
Titania, SiO ₂ , AlN, Si ₃ N, SiC, DLC
(Diamond-like carbon coating), barium titanate, PZ
A dielectric material such as T (lead zirconate titanate) may be used. In addition, magnesia (MgO) alone or an insulating material containing magnesia can be used, thereby stabilizing glow discharge. This is because magnesia has a high secondary electron emission coefficient, and when ions in the plasma collide with the coating on the surface of the inner electrode 3, a large amount of secondary electrons are emitted from the surface of the coating. It is presumed that secondary electrons are accelerated by the sheath formed on the surface of the coating and ionize the plasma generating gas, and as a result, the stabilization of the discharge is maintained. Examples of such an insulating material containing magnesia include a sintered body obtained by adding a small amount (0.01 to 5 vol%) of magnesia to a ceramic powder such as alumina and sintering the same, and a vitreous material such as quartz. Having an MgO film formed on the surface by CVD or the like.

In coating the surface of the inner electrode 3, a cylindrical body (ceramic tube or glass tube) is formed from an insulating material, and the inner electrode 3 is inserted and adhered inside the cylindrical body, , Barium titanate, P
A plasma spraying method in which powder such as ZT is dispersed in plasma and sprayed on the surface of the electrode tube 25 of the inner electrode 3, and an inorganic powder such as silica, tin oxide, titania, zirconia, and alumina are dispersed with a solvent or the like. A so-called enamel coating method of spraying the surface of the electrode main tube 25 of the inner electrode 3 with a spray or the like and then melting at a temperature of 600 ° C. or more, a method of forming a vitreous film by a sol-gel method, and the like. Can be. Further, the surface of the electrode body tube 25 of the inner electrode 3 can be coated with an insulating material by a vapor deposition method (CVD) or a physical vapor deposition method (PVD), and by adopting these methods, extremely dense and smooth. The surface of the inner electrode 3 can be coated with a film of an insulating material having poor adsorption properties, and the stabilization of discharge can be further promoted.

As the refrigerant used as the cooling means of the present invention, ion-exchanged water or pure water can be used. The refrigerant is preferably liquid, and the electric insulation performance of the refrigerant preferably has a withstand voltage at 10 mm intervals of 10 kV or more. The reason for using a refrigerant having an insulating property in this range is to prevent electric leakage from an electrode to which a high voltage is applied. Examples of the refrigerant having such properties include perfluorocarbon and hydrofluoroether.
It may be a mixed solution to which 60% by weight is added.

In the present invention, the frequency of the alternating current applied to the outer electrode 1 and the inner electrode 3 is set to 1 kHz to 50 GHz, preferably 10 kHz to 200 MHz. If the AC frequency is less than 1 kHz, the discharge in the discharge space 22 may not be stabilized. If the AC frequency exceeds 50 GHz, the plasma temperature in the discharge space 22 may increase significantly. There is. When an alternating current is applied to the outer electrode 1 and the inner electrode 3, it is preferable that the outer electrode 1 and the power supply 15 be connected and the inner electrode 3 be grounded, so that the streamer between the inner electrode 3 and the workpiece 7 is formed. Discharge can be suppressed. This is the inner electrode 3
This is because the potential difference between the object 7 and the object 7 becomes almost zero, and it is difficult to generate a streamer discharge. In particular, when the object 7 includes a metal portion, the generation of the streamer discharge becomes remarkable. Preferably, the inner electrode 3 is grounded. In FIG. 2, the inner electrode 3 is connected to the supply pipe 2.
6 is grounded from the supply unit 28.

In the present invention, the power applied to the discharge space 22 between the outer electrode 1 and the inner electrode 3 is 20 to 3
It is preferable to set it to 500 W / cm ³ . Discharge space 2
If the applied power applied to 2 is less than 20 W / cm ³ , plasma cannot be sufficiently generated,
Conversely, the power applied to the discharge space 22 is 3500 W
If it exceeds / cm ³ , stable discharge may not be obtained. The density of the applied power (W / cm ³ )
Is defined by (applied power / discharge space volume).

In the present invention, an inert gas (rare gas) or a mixed gas of an inert gas and a reaction gas can be used as the plasma generating gas. As the inert gas, helium, argon, neon, krypton, or the like can be used, but it is preferable to use argon or helium in consideration of discharge stability and economy. In addition, streamer discharge easily occurs with argon alone,
It is preferable to use a mixed gas obtained by diluting argon with helium. The mixing ratio is closely related to the temperature of the discharge space 22, but the temperature of the plasma jet 65 is set to 250 ° C.
In the case where the content is set as follows, it is preferable that the content of argon is set to 90% by weight or less. If the amount of argon is larger than this, streamer discharge may easily occur. It is considered that the reason why streamer discharge is likely to occur when the amount of argon is large is that argon has a smaller metastable state energy and life than helium as compared with helium.

The type of the reaction gas can be arbitrarily selected depending on the contents of the treatment. For example, in the case where cleaning of an organic substance existing on the surface of the object to be processed, removal of a resist, etching of an organic film, and the like are performed, it is preferable to use an oxidizing gas such as oxygen, air, CO ₂ , or N ₂ O. In addition, a fluorine-based gas such as CF ₄ can be appropriately used as a reaction gas, and it is effective to use the fluorine-based gas when etching silicon or the like. When the metal oxide is reduced, a reducing gas such as hydrogen or ammonia can be used. Range. If the addition amount of the reaction gas is less than 0.1% by weight, the treatment effect may be reduced. If the addition amount of the reaction gas exceeds 10% by weight, the discharge may become unstable.

The above-mentioned treatment for removing organic substances and reduction / removal of inorganic substances can be performed using only an inert gas without using a reaction gas. That is, the above-described processing can be performed without causing oxidation or fluorination of the surface of the processing target 7. this is,
The kinetic energy of the ions and radicals of the inert gas existing inside the plasma and the kinetic energy of the gas flow (the flow when the plasma is blown out) are combined, and the effect is that the plasma attacks the workpiece 7. This is considered to be due to cutting and removing the binding energy of the compound on the surface of the processing object 7.

Next, a plasma processing method using the plasma processing apparatus A formed as described above will be described. First,
A plasma generating gas is introduced into the reaction tube 2 through the gas introduction tube 70 (arrow), and an alternating current such as a high frequency is applied to the outer electrode 1 and the inner electrode 3, and at the same time, the inner electrode 3 is cooled by a refrigerant. And outer electrode 1
The outer electrode 1 is cooled by air, for example, by blowing cooled air. Thereafter, a glow discharge is generated in the discharge space 22 of the reaction tube 2 under atmospheric pressure by an AC electric field applied between the outer electrode 1 and the inner electrode 3, and the plasma introduced into the reaction tube 2 by the glow discharge The generation gas is turned into plasma, and this plasma containing the plasma active species is blown out as a plasma jet 65 from the outlet 21 as shown in FIG.
Plasma treatment can be performed.

It is preferable that the flow rate of the plasma jet 65 blown out from the blowout port 21 is set to 2 to 30 m / sec. If the flow rate of the plasma jet 65 is less than 2 m / sec, the processing capability of the plasma jet 65 may be too small and a long time may be required to perform plasma processing on the workpiece 7. Is 3
If it exceeds 0 m / sec, the processing capability of the plasma jet 65 is too large, and the workpiece 7 may be damaged. The diameter of the outlet 21 and the degree of inclination of the converging section 20 are adjusted and set so that the flow velocity of the plasma jet 65 falls within the above range.

In the above plasma processing, the inner electrode 3
When cooling is performed by the refrigerant, the refrigerant is supplied to the supply pipe 26 from the opening at the upper end of the supply unit 28 (arrow), and the refrigerant is supplied from the opening at the lower end of the supply pipe 26 to the channel 29 inside the inner electrode 3. The flow can be performed such that the refrigerant flows in and fills the flow path portion 29. The temperature of the refrigerant filled in the flow path portion 29 rises due to a rise in the temperature of the inner electrode 3, and the cooling capacity decreases. However, the refrigerant having the lowered cooling capacity is discharged from the flow path portion 29 through the discharge pipe portion 27. At the same time, a refrigerant having a high cooling capacity is newly introduced into the flow path 29 through the supply pipe 26 (arrow).
The refrigerant with reduced cooling capacity discharged from the flow path section 29 is introduced into the refrigerator, where it is cooled and returned to the refrigerant with high cooling capacity. The refrigerant having the improved cooling capacity is introduced into the flow passage 29 through the supply pipe 26 as described above. By circulating the coolant in this manner, the inner electrode 3 can be constantly cooled and maintained at a desired temperature. As described above, a pump can be used as the circulating means for circulating between the flow path portion 29 of the inner electrode 3 and the refrigerator.

The temperature of the plasma jet 65 is preferably set to 250 ° C. or less. To reach such a temperature,
It is preferable that the outer electrode 1 and the inner electrode 3 are cooled such that their surface temperatures are 350 ° C. or less. When the surface temperature of the inner electrode 3 exceeds 350 ° C., a streamer discharge is generated in the discharge space 22, and a uniform glow discharge may not be generated. Note that the lower limit of the surface temperature of the inner electrode 3 is not particularly set, and may be, for example, 0 ° C. or less, as long as the temperature does not freeze the refrigerant. The temperature of the plasma jet 65 blown from the reaction tube 2 is set to 250
It is preferable to use a control means for controlling the temperature to not more than ° C. The control means is composed of a temperature sensor such as a thermocouple and a personal computer, etc., which is measured by the temperature sensor, and based on the measurement result, the circulation rate of the refrigerant by the circulation means is determined by the temperature controller. The temperature of the plasma jet 65 is controlled to 25
It is controlled to 0 ° C. or less. In addition, plasma jet 6
The temperature of 5 is changed according to the type of the workpiece 7 and the type of plasma processing, and is set to a temperature at which the workpiece 7 can be processed or higher.

As described above, the plasma processing apparatus of the present invention
Since the inner electrode 3 is cooled by a refrigerant and the outer electrode 1 is cooled by air cooling, even when plasma is generated by alternating current having a high frequency under atmospheric pressure, temperature rise of the outer electrode 1 and the inner electrode 3 can be suppressed. Therefore, the temperature of the plasma (gas temperature) can be prevented from increasing, and the thermal damage to the processing target 7 can be reduced.
Further, the inner electrode 3 is cooled by a refrigerant and the outer electrode 1 is cooled.
Is cooled by air cooling, local heating of the discharge space 22 can be prevented, a uniform glow discharge can be generated, and generation of a streamer discharge can be suppressed, and damage to the workpiece 7 due to the streamer discharge can be reduced. Is what you can do. This is because in the conventional method, the higher the temperature of the inner electrode 3 is, the higher the emission of electrons from the inner electrode 3 is, and the local emission of electrons occurs, and a streamer discharge is generated from that part. In the present invention, by cooling the inner electrode 3 with a refrigerant and cooling the outer electrode 1 by air,
It is considered that this is because local emission of electrons is suppressed.

The inner electrode 3 of the outer electrode 1 or the inner electrode 3
Since the reaction tube 2 formed of an inorganic insulating material is disposed in contact with the outside of the substrate and a barrier layer made of an electrically insulating material is formed between the outer electrode 1 and the inner electrode 3, higher discharge is achieved. Can be stabilized. In the above embodiment, the reaction tube 2 made of an insulating material is arranged inside the outer electrode 1 so as to be in contact with the outer electrode 1 so as to form a discharge space 22 between the inner electrode 3 and the reaction tube 2. However, the present invention is not limited thereto, and a discharge space 22 may be formed between the outer electrode 1 and the reaction tube 2 by disposing the reaction tube 2 formed of an insulating material outside the inner electrode 3 so as to be in contact therewith. Good. Further, the discharge spaces 22 may be formed both between the inside of the outer electrode 1 and the reaction tube 2 and between the outside of the inside electrode 3 and the reaction tube 2.

Further, since plasma (discharge) energy is concentrated in a small space of the processing object 7 by collecting the plasma in the converging section 20 and blowing it out in a jet form from the blowing port 21, the processing effect and the processing speed are extremely high. can do. Further, since the cooling means is provided, the applied power can be increased without increasing the temperature, and as a result, the density of the plasma can be increased and the processing speed can be increased. Further, the range of the processing effect can be limited to the region near the outlet 21, and the plasma processing can be performed only on a necessary portion of the processing target 7.
The unnecessary portion of the processing can be prevented from being affected by the plasma. In addition, since the plasma processing is performed under the atmospheric pressure, a continuous processing can be performed by transporting the workpiece 7.

FIG. 4 shows a plasma processing apparatus A used in the present invention.
Here is another example. This plasma processing apparatus A is formed by replacing the outer electrode 1 of FIG. 2 with that of FIG. 5, and the other configuration is formed similarly to that of FIG. The outer electrode 1 is made of metal, and as shown in FIG. 4, has a cylindrical inner wall 31 formed inside a cylindrical outer wall 30 and a flow passage closed vertically between the outer wall 30 and the inner wall 31. 32, an inflow pipe 34 communicating with the flow passage 32 is provided at an upper portion of the outer surface of the outer wall 30, and a flow passage 3 is formed at a position opposite to the inflow pipe 34 at a lower portion of the outer surface of the outer wall 30.
It is formed so as to provide an outflow pipe 35 communicating with the second pipe 2. The inner peripheral surface of the inner wall 31 is roughened by a process such as sandblasting, and has a roughness of 10 to 1000 μm.
m. Then, the outer electrode 1 is connected to the reaction tube 2 by bringing the inner peripheral surface of the inner wall 31 into contact with the outer periphery of the reaction tube 2.
The plasma processing apparatus A is formed by being inserted outside the.

The plasma processing apparatus A thus formed
When performing the plasma processing using the same method as in the embodiment of FIG. 2, the inner electrode 3 can be cooled by a coolant, but in the plasma processing apparatus A of this embodiment, the outer electrode 1 Plasma processing is performed while cooling with a refrigerant. That is, the coolant is supplied to the flow passage 32 through the inflow pipe 34 (arrow), and the coolant is filled in the flow passage 32 to cool the outer electrode 1. The temperature of the refrigerant filled in the flow passage 32 rises due to a rise in the temperature of the outer electrode 1, and the cooling capacity decreases. However, the refrigerant having the lowered cooling capacity is discharged from the flow passage 32 through the outflow pipe 35 (arrow). At the same time, a refrigerant having a high cooling capacity is newly introduced into the flow passage 32 through the inflow pipe 34. The refrigerant with reduced cooling capacity discharged from the flow passage 32 is introduced into the refrigerator,
Here, it is cooled and returned to a refrigerant having a high cooling capacity. The refrigerant having improved cooling capacity is introduced into the flow passage 32 through the inflow pipe 34 as described above. By circulating the coolant in this manner, the outer electrode 1 can be constantly cooled and maintained at a desired temperature. As described above, a pump can be used as the circulating means for circulating between the flow passage 32 of the outer electrode 1 and the refrigerator as in the circulating means of the inner electrode 3.

In this plasma processing apparatus A, the outer electrode 1
Since both the inner electrode and the inner electrode are cooled by the refrigerant, the degree of cooling of the outer electrode 1 can be increased as compared with the above embodiment in which the outer electrode 1 is air-cooled. Therefore, even if plasma is generated with high frequency alternating current under atmospheric pressure, the temperature rise of both the outer electrode 1 and the inner electrode 3 can be further suppressed, so that the plasma temperature (gas temperature) does not increase. Thus, thermal damage to the processing target 7 can be further reduced. Outer electrode 1
By cooling both the inner electrode 3 and the inner electrode 3, local heating of the discharge space 22 can be further prevented, a more uniform glow discharge can be generated, and generation of a streamer discharge can be suppressed. Can be further reduced due to streamer discharge. This is achieved by cooling both the outer electrode 1 and the inner electrode 3.
This is considered to be because partial emission of electrons from both the outer electrode 1 and the inner electrode 3 is suppressed.

FIG. 6 shows a plasma processing apparatus A used in the present invention.
Here is another example. This plasma processing apparatus A does not insert the outer electrode 1 shown in FIG. 5 outside the reaction tube 2 as shown in FIG.
It is formed integrally with the reaction tube 2. That is, the upper tube 2a and the lower tube 2b made of an insulating material are used for the reaction tube 2.
By joining the upper end of the outer electrode 1 and the lower end of the upper tubular portion 2a and joining the lower end of the outer electrode 1 and the upper end of the lower tubular portion 2b, the upper tubular portion 2a and the lower tubular portion 2b are formed. An outside electrode 1 is provided between the reaction tube 2 and the reaction tube 2 and the outside electrode 1. Other configurations are formed in the same manner as those shown in FIGS. Therefore, the plasma processing apparatus A is formed so that the outer electrode 1 and the inner electrode 3 face each other directly without interposing an insulator. Further, the outer electrode 1 and the inner electrode 3 are insulated by the upper cylindrical portion 2a of the insulator.

FIGS. 7A and 7B show another example of the plasma processing apparatus A used in the present invention. The reaction tube 2 is made of an insulating material and formed in a rectangular cylindrical shape having a substantially quadrangular cross section. An outlet 21 is provided over substantially the entire lower surface. Further, a gas introduction pipe 70 is protruded from the upper part of the reaction pipe 2. As the insulating material for forming the reaction tube 2, the same material as described above can be used.

An outer electrode 1 made of metal is provided on the outer periphery of the reaction tube 2 at the upper portion of the focusing section 20 over the entire periphery. The outer electrode 1 is formed in a rectangular shape corresponding to the shape of the reaction tube 2, and is not the cylinder shown in FIG. 5 but a rectangular shape. That is, a flow passage 32 having a rectangular cylindrical inner wall 31 formed inside the rectangular cylindrical outer wall 30 and a vertically closed passage between the outer wall 30 and the inner wall 31.
And an inflow pipe 34 communicating with the flow passage 32 is provided above the outer surface of the outer wall 30, and an outflow pipe 35 communicating with the flow passage 32 is provided below the outer surface of the outer wall 30 at a position opposite to the inflow pipe 34. It is formed as described above. The inner peripheral surface of the inner wall 31 is roughened by sandblasting or the like, and the roughness is set to 10 to 1000 μm. The outer electrode 1 is inserted outside the reaction tube 2 such that the inner peripheral surface of the inner wall 31 contacts the outer periphery of the reaction tube 2.

An inner electrode 3 is provided inside the reaction tube 2 so as to face the outer electrode 1. The inner electrode 3 is provided so as to protrude from the converging section 20 to the upper side of the reaction tube 2. It is formed to surround. The inner electrode 3 includes a hollow electrode body tube 25 formed in a rectangular shape corresponding to the shape of the reaction tube 2, and a supply tube portion 80 and a discharge tube portion 81 projecting from the upper end of the electrode body tube 25. The inside of the electrode main body tube 25 is formed as a flow path portion 29 communicating with the supply pipe portion 80 and the discharge pipe portion 81. The inner electrode 3 is preferably formed of the same metal material as the outer electrode 1, and the outer surface of the electrode body tube 25 is preferably roughened similarly to the outer electrode 1. Further, the length of the inner electrode 3 in the lateral direction is
It is preferable to set it to 1 to 20 mm. If the length of the inner electrode 3 in the lateral direction is less than 1 mm, the surface area of the inner electrode 3 facing the discharge space 22 becomes too small, so that the discharge becomes difficult to occur and plasma may not be sufficiently generated. And the length of the inner electrode 3 in the lateral direction is 20
If it exceeds mm, the size of the reaction tube 2 and the outer electrode 1 must be relatively increased, and the apparatus may be increased in size.

The plasma processing apparatus A thus formed
When performing the plasma processing using the method, the outer electrode 1 and the inner electrode 3 can be cooled while cooling the same as in the above embodiment. First, the gas introduction pipe 7
0, a plasma generating gas is introduced into the reaction tube 2 (arrow), and an alternating current such as a high frequency is applied to the outer electrode 1 and the inner electrode 3.
Then, the inner electrode 3 is cooled by the refrigerant. Thereafter, a glow discharge is generated in the discharge space 22 of the reaction tube 2 under atmospheric pressure by an AC electric field applied between the outer electrode 1 and the inner electrode 3, and the plasma introduced into the reaction tube 2 by the glow discharge A plasma can be performed by turning the generation gas into plasma, blowing the plasma out of the outlet 21 as a plasma jet 65 and spraying the plasma on the surface of the workpiece 7.

In cooling the inner electrode 3 with a refrigerant, the refrigerant is supplied from the supply pipe section 80 to the flow path section 29 of the electrode main pipe 25 (arrow), and the refrigerant is filled in the flow path section 29. be able to. The temperature of the refrigerant filled in the flow path portion 29 rises due to a rise in the temperature of the inner electrode 3, and the cooling capacity decreases. The refrigerant having the lowered cooling capacity is discharged from the flow path portion 29 through the discharge pipe portion 81. At the same time, a refrigerant having a high cooling capacity is newly introduced into the flow path 29 through the supply pipe 80. The refrigerant with reduced cooling capacity discharged from the flow path section 29 is introduced into the refrigerator, where it is cooled and returned to the refrigerant with high cooling capacity. The refrigerant having the improved cooling capacity is introduced into the flow passage 29 through the supply pipe 80 as described above. By circulating the coolant in this manner, the inner electrode 3 can be constantly cooled and maintained at a desired temperature.

In cooling the outer electrode 1 by the refrigerant, the refrigerant is supplied to the flow passage 32 through the inflow pipe 34 (arrow), and the outer electrode 1 is cooled by filling the flow passage 32 with the refrigerant. I have to. The temperature of the refrigerant filled in the flow passage 32 rises due to a rise in the temperature of the outer electrode 1, and the cooling capacity decreases. However, the refrigerant having the lowered cooling capacity is discharged from the flow passage 32 through the outflow pipe 35 (arrow). At the same time, a refrigerant having a high cooling capacity is newly introduced into the flow passage 32 through the inflow pipe 34. The refrigerant with reduced cooling capacity discharged from the flow passage 32 is introduced into the refrigerator, where it is cooled and returned to the refrigerant with high cooling capacity. The refrigerant having improved cooling capacity is introduced into the flow passage 32 through the inflow pipe 34 as described above. By circulating the coolant in this manner, the outer electrode 1 can be constantly cooled and maintained at a desired temperature. Preferably, the temperature of the plasma jet 65 is cooled to 250 ° C. or less, and a control device including a temperature sensor and a temperature controller similar to the above is used to control the temperature to 250 ° C. or less. Is preferred.

FIG. 8 shows a plasma processing apparatus A used in the present invention.
Here is another example. This plasma processing apparatus A is the same as that shown in FIG. 3 except that the lower end of the reaction tube 2 is formed as shown in FIGS. 8 (b) and 8 (c). I have. A focusing section 2 is provided at the lower end of the reaction tube 2.
0 is not formed, but is formed almost straight. The lower end surface of the reaction tube 2 is closed by a plate-shaped closing portion 16, and a plurality of the closing portions 16 (four in FIG. 8 are arranged in a quadrant of the substantially circular closing portion 16). Outlet) 21 is perforated. An inner electrode 3 composed of an electrode body tube 25 and a supply tube 26 is disposed inside the reaction tube 2 so as to vertically penetrate the center of the reaction tube 2. The lower end is in contact with a substantially central portion of the upper surface of the closing portion 16. The plasma processing apparatus A is formed by inserting the outer electrode 1 shown in FIG. 5 outside the lower part of the reaction tube 2 as in FIG. At this time, the lower end surface of the outer electrode 1 and the lower end surface of the reaction tube 2 are set at substantially the same height, so that the outlet from the lower end of the discharge space 22 formed between the outer electrode 1 and the inner electrode 3. The distance to 21 is almost zero. Therefore, the plasma jet 65 can be blown out from the outlet 21 and blown to the processing target 7 before extinguishing live plasma active species having high activity, and the plasma processing of the processing target 7 can be enhanced.

The plasma processing apparatus A thus formed
When performing the plasma treatment using the gas, a gas for plasma generation is introduced into the reaction tube 2 through the gas introduction tube 70 and the outer electrode 1 is formed in the same manner as in the embodiment of FIG.
And an AC such as a high frequency is applied to the inner electrode 3 and, at the same time, the outer electrode 1 and the inner electrode 3 are cooled by a refrigerant. A glow discharge is generated in the discharge space 22 of the reaction tube 2 under atmospheric pressure, and the plasma generating gas introduced into the reaction tube 2 is turned into a plasma by the glow discharge. The workpiece 7 is simultaneously blown out from the blowout port 21 as a plasma jet 65.
, The plasma processing can be performed by the plurality of plasma jets 65. The cooling of the outer electrode 1 and the inner electrode 3 is performed in the same manner as in FIG.

In the plasma processing apparatus A, a plurality of outlets 21 from which the plasma jet 65 is blown out are provided, so that a plurality of portions of the workpiece 7 can be simultaneously and locally processed.

FIG. 9 shows a plasma processing apparatus A used in the present invention.
Here is another example. The reaction tube 2 of the plasma processing apparatus A is
It is made of the same insulating material as above and is formed in a rectangular cylindrical shape having a substantially quadrangular cross section. It is formed as a bottom part 18 having a shape. Bottom part 18
Has a plurality of outlets 21 arranged in the longitudinal direction of the reaction tube 2.
Are drilled in two rows. A plurality of gas introduction pipes 70 projecting upward are connected to the curved surface portion 17. Further, the outer electrode 1 is provided on the outer surface of each side wall 19 of the reaction tube 2 over the entire length.

The outer electrode 1 is formed in a rectangular plate shape. That is, an inner wall 31 is formed inside the outer wall 30, and a flow passage 32 whose upper and lower sides are closed between the outer wall 30 and the inner wall 31 is formed. The outlet pipe 35 communicating with the flow passage 32 is provided below the outer surface of the outer wall 30. The inner peripheral surface of the inner wall 31 is roughened by a process such as sandblasting, and the roughness is 10 to 10.
It is set to 1000 μm. Then, the inner peripheral surface of the inner wall 31 is brought into contact with the outer periphery of the reaction tube 2 so that the outer electrode 1
Is inserted outside the reaction tube 2.

An inner electrode 3 is disposed inside the reaction tube 2 so as to face the outer electrode 1, and a discharge is generated between the inner surface of the outer electrode 1 and the outer surface of the inner electrode 3. Although a space 22 is formed, the lower end of the outer electrode 1 is formed at substantially the same height as the lower surface of the bottom portion 18 of the reaction tube 2, and the lower end of the inner electrode 3 is formed on the bottom portion 18 of the reaction tube 2. Since it is in contact with the upper surface, the distance between the lower end of the discharge space 22 and the outlet 21 is substantially zero. Therefore, the plasma jet 65 can be blown out from the outlet 21 and blown to the processing target 7 before extinguishing live plasma active species having high activity, and the plasma processing of the processing target 7 can be enhanced.

The inner electrode 3 corresponds to the shape of the reaction tube 2, and has a hollow electrode main tube 25 formed in a rectangular shape elongated in the same direction as the longitudinal direction of the reaction tube 2, and protrudes from the electrode main tube 25. The electrode body tube 25 is formed as a flow path portion 29 that communicates with the supply tube portion 80 and the discharge tube portion 81. Inner electrode 3
Has a longitudinal end protruding outward from a longitudinal end surface of the reaction tube 2, and a supply tube 80 for supplying a coolant is provided at one end of the inner electrode 3. The other end of the electrode 3 is provided with a discharge pipe 81 from which the refrigerant is discharged. The inner electrode 3 is preferably formed of the same metal material as the outer electrode 1, and the outer surface of the electrode body tube 25 is preferably roughened similarly to the outer electrode 1.

Further, the length of the inner electrode 3 in the lateral direction is 1
It is preferably set to に 20 mm. If the length of the inner electrode 3 in the width direction is less than 1 mm, the surface area of the inner electrode 3 facing the discharge space 22 becomes too small, so that the discharge becomes difficult to occur and the plasma may not be sufficiently generated. And the length of the inner electrode 3 in the lateral direction is 20 m
If it exceeds m, the size of the reaction tube 2 and the outer electrode 1 must be relatively increased, and the size of the apparatus may be increased. A rectifying plate 101 is provided inside the reaction tube 2 above the inner electrode 3, and the flow of the plasma generating gas supplied to the inside of the reaction tube 2 through the gas introduction tube 70 is rectified by the rectifying plate 10.
1 so that it can be supplied to the discharge space 22. Other configurations are formed in the same manner as in the above embodiment.

The plasma processing apparatus A thus formed
In performing the plasma processing using the method shown in FIG.
In the same manner as in the embodiment shown in FIG. 1, the outer electrode 1 and the inner electrode 3 can be cooled while being cooled. First, a gas for plasma generation is introduced into the reaction tube 2 through the gas introduction tube 70 (arrow), and an AC voltage such as a high frequency is applied between the outer electrode 1 and the inner electrode 3. 1 and the inner electrode 3 are cooled by a refrigerant. Thereafter, a glow discharge is generated in the discharge space 22 of the reaction tube 2 under atmospheric pressure by an AC electric field applied between the outer electrode 1 and the inner electrode 3, and the plasma introduced into the reaction tube 2 by the glow discharge The generation gas is converted into plasma, and this plasma is simultaneously blown out from each blowout port 21 as a plasma jet 65 as shown in FIG.
Plasma treatment can be performed by spraying on the surface of the substrate.

In this plasma processing apparatus A, since a plurality of outlets 21 from which the plasma jet 65 is blown are provided, as shown in FIG. 10 without using a table for moving the workpiece 7 on a horizontal plane. By transporting the workpiece 7 to the lower side of the plasma processing apparatus A by a transport device 23 such as a belt conveyor and passing the same, it is possible to locally and locally process a plurality of locations in a wide range of the workpiece 7 at the same time. The device can be simplified. Therefore, even in the case of the processing target 7 in which a component such as an electronic component is composited with a metal or a resin in a hybrid manner, it is possible to individually perform the plasma processing without generating an arc (streamer discharge).

FIG. 1 shows an outline of a plasma processing system using the plasma processing apparatus A shown in FIG. 4 described above. 7
Reference numeral 1 denotes a cylinder in which a gas for plasma generation is stored in a plurality of cylinders 71 for each type. In this embodiment, three cylinders 71 are used, one of which is a helium gas, the other is an argon gas, and the other is a reactive gas such as O ₂ , H ₂ or CF ₄ . (Plasma activated species) are stored, respectively. Each cylinder 71 is connected to one mixer 103 via a connection pipe 72. Each connection pipe 72 has a primary valve 7
3. Primary pressure gauge 74, secondary valve 75, secondary pressure gauge 7
6. A supply amount controller 77 is provided. Primary valve 7
Reference numeral 3 denotes a control unit which is formed so that opening and closing can be controlled by a computer 14 such as a computer which will be described later. 7
2 is interrupted. The supply amount controller 77 adjusts the amount of the plasma generating gas supplied to the mixer 103. The mixer 103 mixes a plurality of types of plasma generating gases supplied from each cylinder 71. The mixer 103 is connected to the gas inlet pipe 70 of the reaction tube 2 via a gas pipe 78. A flashback prevention valve 79 is provided in the middle of the gas pipe 78. When a fire occurs in the plasma processing apparatus A, the flashback prevention valve 79 prevents the fire from reaching the mixer 103 through the gas pipe 78. Cut off the fire.

Reference numeral 82 denotes a refrigerator for cooling the refrigerant, which is connected to a tank 85 via a delivery pipe 83 and a return pipe 84. One end of an outlet pipe 86 is connected to the tank 85, and a pump 87 serving as the circulating means 4 is provided in the middle of the outlet pipe 86.
Is provided. A branch 88 is provided at the other end of the outlet pipe 86, and a supply pipe connecting pipe 89 and an inflow pipe connecting pipe 90 are connected to the branch 88. The supply pipe connection pipe 89 is connected to the supply pipe 26 of the inner electrode 3 of the plasma processing apparatus A, and the inflow pipe connection pipe 90 is connected to the inflow pipe 34 of the outer electrode 1 of the plasma processing apparatus A. The plasma processing apparatus A of this system is the same as that shown in FIG.
The upper and lower positional relationship between the inflow tube 34 and the outflow tube 35 of the outer electrode 1 is reversed.

An outlet pipe connecting pipe 91 has one end connected to the outlet pipe 35 of the outer electrode 1 of the plasma processing apparatus A and the other end connected to the mixer 92. Reference numeral 93 denotes a discharge pipe connection pipe, one end of which is connected to the discharge pipe 27 of the electrode body tube 25 of the inner electrode 3, and the other end of which is connected to the mixer 92. The mixer 92 is connected to the above-mentioned tank 85 by an introduction pipe 100, and a thermocouple thermometer 94 for measuring the temperature of the refrigerant flowing through the introduction pipe 100 for the refrigerant is provided in the middle of the introduction pipe 100. This thermocouple thermometer 94 constitutes the control device 48 of the plasma processing apparatus A.

Reference numeral 15 denotes a power supply formed by a high-frequency generator or the like, which is electrically connected to the outer electrode 1 of the plasma processing apparatus A via a power supply line 95, and which is automatically tuned in the middle of the power supply line 95. A coupler 96 is provided. The automatic tuning coupler 96 automatically matches the impedance of the circuit. Reference numeral 97 denotes an infrared thermometer included in the control device 48, which measures the temperature of the outer electrode 1 of the plasma processing apparatus A and the temperature of the processed portion of the workpiece 7. Reference numeral 14 denotes a computer such as a microcomputer, a microprocessor, a CPU, and a personal computer, which constitutes a control device 48 of the plasma processing apparatus A. The computer 14 is electrically connected to the thermocouple thermometer 94, the infrared radiation thermometer 97, and the input line 98, and the result of temperature measurement by the thermocouple thermometer 94 and the infrared radiation thermometer 97 is input to the input line 98. Is to be entered via In addition, the computer 14 operates in accordance with a pre-programmed procedure to transport the transport device 23 such as a belt conveyor that transports the workpiece 7, drive the XY table 99 disposed below the plasma processing device A, and operate the primary valve. The opening / closing operation of the pump 73, the operation of adjusting the flow rate of the refrigerant by the pump 87, the operation of adjusting the amount of high-frequency generation and the operation of adjusting the frequency of the power supply 15, and the time of the plasma processing are automatically controlled. The portion where the circuit from the outer electrode 1 and the automatic tuning coupler 96 and the outer electrode 1 are connected to each other is corroded, thereby causing impedance mismatch. Therefore, it is preferable to apply a corrosion-resistant material such as gold plating.

FIGS. 11 and 12 show specific examples of the plasma processing system of FIG. System body 11 formed in a box shape
0, a power supply 15, a refrigerator 82, a pump 87,
The tank 85, the primary valve 73, and the mixer 103 are housed. An automatic tuning coupler 96 is housed in the upper part of the system main body 110. Reference numeral 111 denotes an exhaust fan mounted on the upper surface of the system main body 110. A transfer device 23 is provided in the center of the system main body 110, and a plasma processing apparatus A is disposed above the transfer device 23. Note that the computer 14 and the cylinder 71 are arranged outside the system main body 110.

The transfer device 23 includes an XY table 99, an introduction rail 112, and an exit rail 113.
The introduction rail 112 is provided so as to protrude from the inside of the system main body 110 to the outside of the system main body 110 via an entrance 114 provided on one side surface of the system main body 110. As shown in FIG. 13, the introduction rail 112 is formed by arranging a pair of rail members 115 substantially in parallel on a horizontal plane.
Rolls 116 are provided at a substantially central portion between the pair of rail members 115 below an inner end and an outer end of the introduction rail 112, respectively. This roll 116
, An introduction belt 117 is suspended.
Reference numeral 17 is formed so as to be driven in one direction by the driving of the introduction motor 118. The introduction belt 117 advances in a direction toward the inside of the system main body 110 between the pair of rail members 115 of the introduction rail 112. The lead-out rail 113 is connected to the outlet 12 provided on the other side of the system main body 110 from the inside of the system main body 110.
0 protrudes to the outside of the system main body 110 via the “0”. The inlet 114 and the outlet 120 are formed at positions facing each other. As shown in FIG. 13, the lead-out rail 113 is formed by arranging a pair of rail members 115 substantially in parallel on a horizontal plane, and at a substantially central portion between the pair of rail members 115, below the inner end of the lead-out rail 113. The rolls 116 are provided below the outer end portions. A lead-out belt 121 is hung on the roll 116, and the lead-out belt 121 is formed so as to be driven in one direction by the drive of a lead-out motor 122.
The lead-out belt 121 advances between the pair of rail members 115 of the lead-out rail 113 in a direction toward the outside of the system main body 110.

The XY table 99 includes a lower rail 123, an upper rail 124, and a moving table 125. The lower rail 123 is formed to be long in a direction substantially parallel to the introduction rail 112 and the exit rail 113 (substantially parallel to the direction connecting the entrance 114 and the exit 120), and is disposed behind the introduction rail 112 and the exit rail 113. I have. Lower rail 1
A traveling platform 126 is mounted on the traveling platform 23 so as to be able to travel in the longitudinal direction of the lower rail 123, and an upper rail 124 is provided on the traveling platform 126. The upper rail 124 is formed to be long in a direction substantially perpendicular to the introduction rail 112 and the exit rail 113 (substantially perpendicular to the direction connecting the entrance 114 and the exit 120).
And a length extending from under the plasma processing apparatus A to the lower side. A movable platform 125 is mounted on the upper rail 124 so as to run along the longitudinal direction of the upper rail 124.

The moving table 125 includes a traveling section 127 traveling on the upper rail 124, a leg 128 projecting from the traveling section 127, and a flat set table 129 provided on the leg 128. The upper surface of the set table 129 is disposed at substantially the same height as the upper surfaces of the introduction rail 112 and the extraction rail 113. The moving table 125 travels on the upper rail 124 so that the set table 129 moves between a state between the introduction rail 112 and the deriving rail 113 and a state below the plasma processing apparatus A. And move. The XY table 99 has the lower rail 123, the upper rail 124, and the moving table 125.
A driving device such as a motor is built in to drive the vehicle.

The plasma processing apparatus A is a system
Is mounted on the distal end of a support stand 130 erected inside the lower rail 123, and is disposed on the inner side of the introduction rail 112 and the derivation rail 113 and almost right above the lower rail 123 and the upper rail 124. As shown in FIGS.
0 is provided with a holding device 131 at the front end.
A substantially central portion of the reaction tube 2 is held at 31. The plasma processing apparatus A has a shield case 13 having upper and lower surfaces opened.
2 from the opening on the lower surface of the shield case 132,
The supply portions 28 of the supply pipe 26 protrude from the openings on the upper surface. The inflow pipe 34 and the outflow pipe 35 of the outer electrode 1 protrude from the side surface of the shield case 132. Incidentally, the plasma processing apparatus A is formed substantially in the same manner as that of FIG.

This plasma processing system is provided with inflow prevention means 5. The inflow prevention means 5 blows out air outside the reaction tube 2 containing a trace amount of impurities such as organic substances and moisture when the plasma processing is not performed by stopping the supply of the discharge and plasma generation gas in the discharge space 22. This prevents the gas from flowing into the reaction tube 2 from the port 21. The inflow prevention means 5 includes a lid 6 and a driving device 33 such as a cylinder for driving the lid 6 up and down. The lid 6 is provided at an upper end of a rod 46 of the driving device 33. The lid 6 is disposed below the reaction tube 2 so as to face the outlet 21. On the upper surface of the lid 6, a storage recess 41 into which the focusing portion 20 at the lower end of the reaction tube 2 is inserted is formed. The storage recess 41 has a mortar shape and is formed in a substantially inverted trapezoidal cross section. A groove 42 is formed on the inner peripheral surface of the storage recess 41 over the entire circumference, and a packing 102 is provided in the groove 42. Is inserted.

When plasma processing is performed by the above-described plasma processing apparatus A, the outlet 21 is opened by moving the rod 46 of the driving device 33 downward to move the lid 6 downward, and the plasma jet is discharged from the outlet 21. 65 is blown out. When the plasma processing is stopped, the rod 46 of the driving device 33 is moved upward to move the lid 6 upward, and the focusing section 20 of the reaction tube 2 is stored in the storage recess 41 of the lid 6.
And the packing 102 is brought into close contact with the outer peripheral surface of the converging section 20, and the outlet 21 is closed by the lid 6.

If the outlet 21 is left open when the plasma processing apparatus A is stopped, air outside the reaction tube 2 enters the reaction tube 2 from the outlet 21 and is contained in the external air. A small amount of impurities such as organic substances and moisture adhere to the inner surface of the reaction tube 2 and the outer surface of the inner electrode 3. However, the impurities attached to the inner surface of the reaction tube 2 and the outer surface of the inner electrode 3 When the operation is restarted (when the plasma processing is restarted), it may be re-desorbed by the discharge and adversely affect the generation of radicals in the plasma (kill the radicals contributing to the reaction), thereby delaying the generation of plasma. In some cases, it took time to restart the operation with a normal plasma generation amount. Therefore, in the plasma processing apparatus A of this embodiment, by providing the lid 6 that closes the outlet 21 of the reaction tube 2 when the plasma processing apparatus A is stopped, external air is blown when the plasma processing apparatus A is stopped. This prevents the gas from flowing into the reaction tube 2 from the port 21 so that plasma can be generated quickly and efficiently when the operation is restarted.

Instead of the lid 6, dry air with little moisture (or no impurities) can be used as the inflow prevention means 5. That is, when the plasma processing apparatus A is stopped, the gas introduction pipe 70
Then, the dry air supplied to the inside of the reaction tube 2 is continuously supplied from the outlet 21 while the dry air is continuously supplied to the inside of the reaction tube 2. As described above, the supply of the dry air to the reaction tube 2 and the supply of the dry air to the reaction tube 2 are continued to be blown out from the outlet 21, thereby preventing the outside air from entering the reaction tube 2 from the outlet 21. The plasma generation can be performed quickly and efficiently when the operation is resumed.

The above-mentioned adverse effects can also be mitigated by removing trace impurities in the air adsorbed inside the reaction tube 2 when the operation is stopped. As means for removing trace impurities in the air adsorbed inside the reaction tube 2 when the operation is stopped, for example, a heater for heating the reaction tube 2 may be provided.

The object 7 to be processed is
In performing the plasma processing, the following is performed.
First, a refrigerant is circulated between the refrigerator 82 and the plasma processing apparatus A by the pump 87. In other words, the delivery pipe 8 from the refrigerator 82
3, the refrigerant cooled is introduced into the tank 85, the refrigerant is supplied from the tank 85 to the branching unit 88 via the outlet pipe 86, and the branching unit 88 supplies the refrigerant to the supply pipe connecting pipe 89 and the inflow pipe connecting pipe 90. The coolant is supplied from the supply pipe connecting pipe 89 to the supply pipe 26 of the plasma processing apparatus A, and is supplied from the inflow pipe connecting pipe 90 to the inflow pipe 34. The refrigerant supplied to the supply pipe 26 is discharged from the discharge pipe section 27 through the flow path section 29 of the inner electrode 3, and is introduced into the mixer 92 through the discharge pipe connection pipe 93. On the other hand, the refrigerant supplied to the inflow pipe 34 is discharged from the outflow pipe 35 through the flow path 32 of the outer electrode 1 of the plasma processing apparatus A, and is connected to the outflow pipe connection pipe 9.
1 to the mixer 92. Thereafter, the refrigerant is introduced from the mixer 92 into the tank 85 via the introduction pipe 100, and is returned to the refrigerator 82 via the return pipe 84.

After the refrigerant is circulated as described above, a plasma generating gas is introduced into the plasma processing apparatus A. That is, after the primary valve 73 and the secondary valve 75 are opened, various plasma generating gases are supplied from the cylinder 71 to the mixer 103 through the connection pipe 72, and the plasma is mixed by the mixer 103. The mixed gas for plasma generation is supplied to the gas introduction pipe 70 via the gas pipe 78, and the plasma generation gas is introduced from the gas introduction pipe 70 into the discharge space 22 of the reaction tube 2.

After the plasma generating gas is introduced into the discharge space 22 as described above, a high-frequency voltage generated by the power supply 15 is applied to the outer electrode 1, and a high-frequency electric field is applied to the discharge space 22. Note that the inner electrode 3 is grounded. Then, by applying a high-frequency electric field to the discharge space 22, the plasma generating gas introduced into the discharge space 22 is turned into plasma, and the plasma jet 6 is discharged from the outlet 21 of the reaction tube 2.
Make it blow out as 5. When the plasma jet 65 generated in this way has a constant output, the transport device 23 is driven, the workpiece 7 having completed the previous process is introduced into the system body 110, and the plasma processing apparatus A performs the plasma processing. After being applied to the object 7, it is transported to the next step.

The position of the processed portion 13 of the processed object 7 to be subjected to the plasma processing is input to the computer 14 in advance. This means that the object to be processed 7 is an IC as shown in FIG.
The case of a mounted circuit board will be described. Reference numeral 8 denotes a circuit board on which alignment markers 40 are provided at four corners. A die portion 44 on which an electronic component 43 such as an IC is mounted is provided on the surface of the circuit board 8.
A plurality of bonding pads 45 are formed on the die portion 44 along each side of the die portion 44. A plurality of bonding pads 9 are formed on the surface of the circuit board 8 so as to surround the electronic component 43. Further, a pair of lands 47 are formed on the surface of the circuit board 8, and the electronic components 43 such as chip resistors are joined to the lands 47 by solder 49.

In such an IC-mounted circuit board, when the surface treatment of the bonding pad 9 surrounding the electronic component 43 is performed by plasma processing, as shown in FIG. The position of the start point a and the end point b and the positions of the plurality of passing points c, d, and e of the processed portion 13 are represented by (X, Y) coordinates and input to the computer 14. Have been. That is, the position of the start point a is assumed to be (X
1, Y1), the position of the end point b is (X5, Y5), and the positions of the passing points c, d, e are (X2, Y2), (X3,
Y3) and (X4, Y4) are represented by coordinates and input to the computer 14. The time for blowing out the plasma from the plasma processing apparatus A is input in advance to the computer 14 as the processing time of the processing target portion 13 of the processing target 7.

In the above plasma processing system, IC
In performing the plasma processing on the processing target portion 13 of the processing target 7 which is a mounting circuit board, first, the processing target 7 which has been subjected to the pre-processing is supplied onto the outer end of the introduction rail 112 and is supplied to the introduction belt 117. The lower surface of the workpiece 7 is brought into contact with
The workpiece 7 is moved into the entrance 11 by the advance of the introduction belt 117.
4 to the inside of the system main body 110. The object 7 introduced into the system main body 110 is a movable table 12 located between the introduction rail 112 and the exit rail 113.
5 is supplied from the introduction rail 112 and placed on the upper surface of the set table 129. Next, the moving table 125 is moved to the upper rail 12.
The workpiece 7 is disposed on the lower side of the plasma processing apparatus A as shown in FIG.

Next, while the plasma jet 65 is blown out from the outlet 21 of the reaction tube 2 of the plasma processing apparatus A, the workpiece 7 is moved below the plasma jet 65 by driving the XY table 99 in a horizontal plane. That is,
By moving the upper rail 124 along the longitudinal direction of the lower rail 123 and moving the movable table 125 along the longitudinal direction of the lower rail 123, the object to be processed placed on the set table 129 of the movable table 125 is moved. 7 can be moved in a horizontal plane. Then, the plasma jet 65 blown out from the plasma processing apparatus A passes through the passing points c, d, and e in this order from the starting point a and reaches the end point b, so that This is performed by controlling the XY table 99 to move on a horizontal plane based on the coordinates. Next, when the processing time has elapsed, a signal is sent from the computer 14 to the plasma processing apparatus A, and the blowing of the plasma jet 65 is stopped at the position of the end point b.

Thereafter, the upper rail 124 is connected to the lower rail 123
On the upper rail 124
The movable table 125 is positioned between the introduction rail 112 and the exit rail 113 by running on the vehicle. Next, the workpiece 7 is advanced on the outgoing rail 113 by the advance of the outgoing belt 121, introduced into the outside of the system main body 110 from the outlet 120, and transported to the next process. In this manner, the plasma processing can be continuously performed while sequentially sending a plurality of IC-mounted circuit boards, and a desired portion can be automatically subjected to the plasma processing according to a procedure programmed in the computer 14 in advance.

By using the above-described plasma processing system, the plasma processing is performed only on the bonding pads 9 around the electronic component 43, and other parts that do not require the plasma processing, for example, The influence of the plasma treatment on the electronic components 43 and 48, the solder 49 and the resin is reduced, so that the damage can be reduced. In particular, it is effective for the workpiece 7 having a portion having poor heat resistance such as resin or solder. Further, in the case of the plasma jet 65 at a temperature of 250 ° C. or less, the electronic components 4 such as an IC chip
3, 48 charge-up damage can hardly be caused. Further, the above-described plasma processing system has a start point a and an end point b, and a plurality of passing points c, d, and e.
By changing the coordinate values of, for example, the electronic component 4
Bonding pad 4 of die part 44 before mounting 3
5 can be easily changed to the surface treatment of the land 47 or the like.

According to the present invention, soldering can be performed without using flux. Originally, the flux has a role of removing an oxide layer generated on the surface of the solder because the oxide layer adversely affects the bonding. However, the flux needs to be cleaned because the flux remains on the substrate. On the other hand, in the present invention, by removing the oxide layer by using a plasma in which hydrogen and a fluorine-containing gas are mixed, solder bonding can be performed without using any flux.

During the plasma processing as described above, the temperature of the refrigerant is constantly measured by the thermocouple thermometer 94, and the temperatures of the outer electrode 1 and the object 7 are measured by the infrared thermometer 97. These measurement results are input to the computer 14. If the temperature of the refrigerant or the outer electrode 1 is too high, the computer 14 controls the flow rate of the refrigerant by the pump 87 or the cooling capacity of the refrigerant by the refrigerator 82 to increase.
The computer 14 controls the flow rate of the refrigerant by the refrigerant 7 and the cooling capacity of the refrigerant by the refrigerator 82. Also, if the temperature of the refrigerant, the outer electrode 1 and the object 7 becomes abnormally high,
The primary valve 73 is closed to shut off the supply of the plasma generating gas to the reaction tube 2, cut off the generation of high frequency power at the power supply 15, and stop the transfer of the workpiece 7 in the transfer device 23. Control by the computer 14.

In the above embodiment, the XY table 99 that moves in the horizontal plane is used. Instead, an XYZ table that moves in the horizontal plane and in the vertical direction may be used. Outlet 21 of pipe 2
The distance between the object 7 and the object 7 can also be controlled and controlled by the computer 14 of the control means 48 during the plasma processing.

FIG. 20 shows another plasma processing system using the above-described plasma processing apparatus A. Reference numeral 10 denotes a support arm, which includes a front support piece 36 and a rear support piece 37. A grip portion 38 for gripping the plasma processing apparatus A is provided at the tip of the front support piece 36, and the plasma processing apparatus A is provided to be gripped by the grip section 38. Further, the front support piece 36 is attached to the rear support piece 37 so as to be able to protrude and retract, whereby the support arm 10 is formed to be able to expand and contract. Further, the rear support piece 37 is attached to the column 39 so as to be vertically movable and rotatable in the circumferential direction of the column 39, whereby the support arm 10 is formed so as to be vertically movable and rotatable with respect to the column 39. I have.

Reference numeral 11 denotes an installation table, which is formed by a conveyor such as a belt conveyor which can place and transport the workpiece 7 thereon. The installation table 11 may be formed of a horizontally movable table or the like. Numeral 12 denotes a detector formed by a camera or the like, which constitutes a control device 48, which is disposed above the installation table 11 and which recognizes the alignment marker 40 of the processing target 7 to be processed. The horizontal position of the processing object 7 is detected. Reference numeral 14 denotes the above-described computer, which constitutes the control device 48, and includes the support arm 10, the support 39, and the detector 1
2. It is electrically connected to the installation base 11. The computer 14 and the support arm 10 constitute a means for moving the reaction tube 2 two-dimensionally or three-dimensionally, that is, a means for moving the reaction tube 2 in a direction perpendicular to the horizontal plane.

The position of the processed portion 13 of the processed object 7 shown in FIG. 18 is previously input to the computer 14 in the same manner as described above. In the plasma processing system formed as described above, when the processed portion 13 of the IC mounted circuit board is subjected to the plasma processing, first, the alignment marker 40 of the IC mounted circuit board carried on the installation table 11 is attached to the detector 12. When detected, the detection signal is sent to the computer 1
4, the computer 14 sends a stop signal to the installation base 11 based on this detection signal to stop the installation base 11, and sets the IC-mounted circuit board at a predetermined position below the plasma processing apparatus A.

Next, the plasma processing apparatus A is operated by a signal from the computer 14 and the plasma jet 6
The plasma processing apparatus A is moved above the portion to be processed 13 while blowing 5. The plasma processing apparatus A moves from the start point a to pass through the passing points c, d, and e in this order to reach the end point b.
4 is the support arm 1 based on the coordinates of each point input in advance.
This is performed by controlling the support arm 10 and the support column 39 by extending and retracting the support arm 10 and rotating the support arm 10 with respect to the support column 39. Further, the support arm 10 may be moved up and down with respect to the column 39. Next, when the processing time has elapsed, a signal is sent from the computer 14 to the plasma processing apparatus A, and the blowing of the plasma jet 65 is stopped at the position of the end point b. In this manner, plasma processing can be continuously performed while sequentially sending a plurality of IC-mounted circuit boards on the installation table 11.

[0088]

As described above, the invention according to claim 1 of the present invention comprises a tubular reaction tube provided with an outer electrode, and an inner electrode disposed inside the reaction tube, wherein the outer electrode is connected to the outer electrode. A cooling means is provided on at least one of the inner electrodes, and the cooling means is introduced by introducing an inert gas or a mixed gas of the inert gas and the reaction gas into the reaction tube and applying an AC electric field between the outer electrode and the inner electrode. Since a glow discharge is generated inside the reaction tube under atmospheric pressure and a plasma processing device that blows out a plasma jet from the reaction tube, and a transfer device that transfers the object to be processed to a position where the plasma jet is blown out, a cooling device is used. By cooling the outer electrode or inner electrode with cooling means, even if plasma is generated with high frequency and high output AC under atmospheric pressure, the temperature rise of the outer electrode or inner electrode is suppressed. It can prevent the temperature of the plasma from becoming high and reduce the thermal damage to the object to be processed. In addition, generate a uniform glow discharge to suppress the generation of a streamer discharge. It is possible to reduce damage due to streamer discharge of the object to be processed, and to easily perform plasma processing only on a specific portion of the object to be processed by locally blowing out a plasma jet. . Further, by transporting the workpiece to a position where the plasma jet is blown out, the workpiece can be continuously subjected to plasma processing, and the processing time can be shortened.

According to a second aspect of the present invention, an XY table or an XYZ table for holding an object to be processed at a position where a plasma jet is blown out is provided in a transfer device, and an XY table or an XYZ table is provided at a portion to be processed of the object to be processed. Since a control device for moving the XY table or the XYZ table so that the plasma jet is blown out is provided, by moving the XY table or the XYZ table under the control of the control device, the device is automatically moved to a desired position on the workpiece. The plasma processing can be performed, and the efficiency of the plasma processing can be increased.

According to the third aspect of the present invention, since means for moving the reaction tube two-dimensionally or three-dimensionally is provided, the reaction tube is moved two-dimensionally or three-dimensionally to perform plasma processing. In addition, it is possible to perform a plasma treatment on a desired portion of the object to be treated, thereby improving the efficiency of the plasma treatment.

The invention according to claim 4 of the present invention is characterized in that an inner electrode is disposed inside a cylindrical reaction tube having an outer electrode, and a cooling means is provided in at least one of the outer electrode and the inner electrode. By introducing an inert gas or a mixed gas of an inert gas and a reaction gas into the tube and applying an AC electric field between the outer electrode and the inner electrode, a glow discharge is generated inside the reaction tube at atmospheric pressure, thereby causing a reaction. Since the plasma jet is blown from the tube and the object to be processed is transported to a position where the plasma jet is blown out, the outer electrode or the inner electrode is cooled by the cooling means by the cooling means, so that the frequency and the output are high under the atmospheric pressure. Even if plasma is generated by an alternating current, the temperature rise of the outer electrode or the inner electrode can be suppressed, and the temperature of the plasma can be prevented from rising. It is possible to reduce the damage due to streamer discharge by generating a homogeneous glow discharge and to suppress the generation of streamer discharge, and to reduce the damage of the object to be processed due to streamer discharge. By locally blowing out the plasma jet, the plasma processing can be easily performed only on a specific portion of the object to be processed. Further, by transporting the workpiece to the position where the plasma jet is blown out,
The object can be continuously subjected to plasma processing, and the processing time can be shortened.

According to a fifth aspect of the present invention, an object to be processed is held on an XY table or an XYZ table provided in a transfer device at a position where a plasma jet is blown out, and the portion to be processed of the object is Since the XY table or the XYZ table is moved so that the plasma jet is blown out, by automatically moving the XY table or the XYZ table under the control of the control device, it is possible to automatically perform the plasma processing on a desired portion of the workpiece. Can be
The efficiency of the plasma processing can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an example of an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating an example of the plasma processing apparatus A according to the first embodiment.

FIG. 3 is an enlarged sectional view of a part of the above.

FIG. 4 is a cross-sectional view showing another plasma processing apparatus of the above.

FIG. 5 is a perspective view showing an example of an outer electrode of the above.

FIG. 6 is a sectional view showing still another plasma processing apparatus according to the first embodiment;

FIG. 7 shows still another plasma processing apparatus according to the first embodiment;
(A) is a side view, (b) is a sectional view.

FIG. 8 shows still another plasma processing apparatus according to the first embodiment;
(A) is a sectional view, (b) is a partial sectional view, and (c) is a bottom view.

FIG. 9 shows still another plasma processing apparatus of the above,
(A) is a side view with a part broken, and (b) is a cross-sectional view.

FIG. 10 is a sectional view showing a use state of the above.

FIG. 11 is a schematic sectional view showing an example of the plasma processing system of the above.

FIG. 12 is a sectional view of the above.

FIG. 13 is a sectional view of the above.

FIG. 14 is a cross-sectional view showing an example of the plasma processing apparatus of the above.

FIG. 15 is a sectional view of the above.

FIG. 16 is a sectional view showing the inflow prevention means according to the third embodiment.

FIG. 17 is an enlarged sectional view showing the inflow prevention means according to the third embodiment.

FIG. 18 is a plan view showing an object to be processed according to the embodiment.

FIG. 19 is a schematic plan view showing a plasma processing method of the above.

FIG. 20 is a schematic view showing another plasma processing system of the above.

FIG. 21 is a sectional view showing a comparative example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Outer electrode 2 Reaction tube 3 Inner electrode 7 Object to be processed 13 Part to be processed 23 Transport device 48 Control device 65 Plasma jet 99 XY table A Plasma processing device

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI H05H 1/52 H05H 1/52 (72) Inventor Sachiko Okazaki 2-20-11 Takaido East, Suginami-ku, Tokyo (72) Inventor Kokoma Masuhiro 843-15 Shimoarakura, Wako City, Saitama Prefecture

Claims (5)

[Claims] 1. A reaction tube comprising: a tubular reaction tube having an outer electrode; and an inner electrode disposed inside the reaction tube, wherein at least one of the outer electrode and the inner electrode is provided with cooling means. A glow discharge is generated inside the reaction tube under atmospheric pressure by introducing an inert gas or a mixed gas of an inert gas and a reaction gas into the reaction tube and applying an AC electric field between the outer electrode and the inner electrode. A plasma processing system comprising: a plasma processing apparatus that blows out a plasma jet from a plasma processing apparatus; and a transfer apparatus that transfers an object to be processed to a position where the plasma jet is blown out. 2. An XY table or XYZ in which an object to be processed is held at a position where a plasma jet is blown out.
2. The plasma according to claim 1, further comprising: a control unit configured to move the XY table or the XYZ table so that the table is provided on the transfer device and the plasma jet is blown to the processing target portion of the processing target. Processing system. 3. The apparatus according to claim 1, further comprising means for moving the reaction tube two-dimensionally or three-dimensionally.
3. The plasma processing system according to 1. 4. An inner electrode is disposed inside a cylindrical reaction tube provided with an outer electrode, cooling means is provided on at least one of the outer electrode and the inner electrode, and the reaction tube reacts with an inert gas or an inert gas. By introducing a gas mixture and applying an AC electric field between the outer electrode and the inner electrode, a glow discharge is generated inside the reaction tube under atmospheric pressure, and a plasma jet is blown out of the reaction tube, and the plasma jet is generated. A plasma processing method, wherein an object to be processed is transported to a position to be blown out. 5. An XY table or an XYZ table provided on a transfer device at a position where a plasma jet is blown out, wherein the XY table or the XYZ table is provided such that the plasma jet is blown out to a processing target portion of the work. 5. The XYZ table is moved.
4. The plasma processing method according to 1.