JPH11249283A - Half-tone type phase shift mask and half-tone type phase shift mask blank - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a half-tone type phase shift mask and a half-tone type phase shift mask blank that can make a light shielding film low-reflective so as to considerably improve a transfer characteristic. SOLUTION: A semi-light transmissive film 2 of MoSiN is formed on a transparent base, and a light shielding film 5 with reflection preventive function is formed on the semi-light transmissive film 2 not substantially contributing to light offsetting action near a boundary between a light transmission part 6 and the semi-light transmissive film 2. The lightproof film 5 comprises a CrN film 3 and a CrON film 4 laminated in this order from the semi-light transmissive film 2 side. The lightproof film 5 is also formed on the semi-light transmissive film 2 in a non-transfer area other than a transfer area 1. The transmission of exposure light originally unnecessary can be prevented by providing the lightproof film 5, and since the lightproof film 5 is a low reflection film, reflected light from an image focusing optical system and a wafer at the time of exposure is hardly reflected again, which results in the considerable improvement of a transfer characteristic.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a halftone type phase shift mask and a halftone type phase shift mask blank as a material thereof, and more particularly, to a halftone phase shift mask for reducing reflection of a light shielding film provided in a semi-transmissive portion. The present invention relates to a tone type phase shift mask and a halftone type phase shift mask blank.

[0002]

2. Description of the Related Art In the manufacture of semiconductor LSIs and the like, a phase shift mask is used as one of photomasks serving as a fine pattern transfer mask. This phase shift mask provides a phase difference between exposure light passing through the mask,
This is to improve the resolution of the transfer pattern. As one type of the phase shift mask, the light-shielding portion is a semi-light-transmitting portion (light semi-light-transmitting film) that transmits light having an intensity that does not substantially contribute to exposure and shifts the phase of the transmitted light. A so-called halftone type phase shift mask is known in which light passing near the boundary between a part and a translucent part cancels each other so that the contrast at the boundary part can be favorably maintained.

In a halftone type phase shift mask, a semi-light-transmitting portion has both a phase shift function and a light-shielding function. However, a semi-light-transmitting portion other than a boundary portion of a pattern completely blocks exposure light. Although it is desirable to use a light-shielding layer as described above, in the conventional phase shift mask, there is a slight leakage of the exposure light transmitted through the semi-transparent portion in this portion. For this reason, in the case where the transfer object has a step and the thickness of the resist greatly varies depending on the location, the thickness of the thin portion of the resist during etching is greatly reduced, and the function as a mask can be sufficiently performed during the etching. There was no problem.

A phase shift mask is generally used as a mask (reticle) of a reduction projection exposure apparatus (stepper). When pattern transfer is performed using this stepper, exposure is performed by covering the peripheral region with a covering member (aperture) provided on the stepper so that only the phase shift mask transfer region is exposed. However, it is difficult to accurately set the aperture so as to expose only the transfer region, and in many cases, the exposed portion protrudes into the non-transfer region around the outer periphery of the transfer region. Usually, a light-shielding film is provided in the non-transferred area of the mask in order to block the protruding exposure light. In the case of a halftone type phase shift mask, a semi-transparent film is provided as the light-shielding film. However, the semi-transmissive film does not completely block the exposure light, but allows the exposure light to pass though a small amount that cannot substantially contribute to the exposure by one exposure. Therefore, during the repetition step, the exposure light that has passed through the semi-transparent film due to this projection reaches the area where the pattern exposure has already been performed, and the exposure light is overlapped, or it is also slightly exposed during another shot. In some cases, exposure is performed in such a manner that the exposed portion is superimposed on the portion where the color has been removed. Due to the overlapping exposure, there is a problem in that they are added to reach an amount contributing to the exposure and a defect occurs.

[0005] In order to solve such a problem, a semi-transmissive portion which does not substantially contribute to the light canceling action in the mask pattern transfer region near the boundary between the translucent portion and the translucent portion. There has been proposed a halftone type phase shift mask in which a light-shielding layer is provided on a light part and a semi-light-transmitting part in a non-transfer area (Japanese Patent Application Laid-Open No. 7-128840). As described above, by providing the light-shielding film in the semi-transmissive portion that does not substantially contribute to the light canceling action, the contrast of the boundary between the semi-transmissive portion and the translucent portion can be improved, which is the original function of the half-tone phase shift mask. It is possible to almost completely prevent leakage of exposure light, which is a disadvantage thereof, while taking advantage of the advantages.

[0006]

However, in the halftone type phase shift mask described in JP-A-7-128840, the light shielding layer is a pure chromium film, and the chromium film has a reflectance of 35% at the exposure wavelength. As described above, the reflected light from the transfer target, such as a wafer or an imaging optical system (such as a lens), is re-reflected by the light-shielding layer of the chrome film.
It adversely affects the imaging characteristics. Further, since the chromium film has a large film stress, the chromium film causes deformation of the substrate, resulting in a decrease in positional accuracy.

Further, using a halftone type phase shift mask blank in which a light shielding layer is formed in a semi-transmissive portion, a mask pattern is drawn by a laser drawing machine (for example, a wavelength 363.
8 nm), when the reflectance at the exposure wavelength is high (approximately 20% or more), there is a problem in CD (short dimension or minute dimension) controllability. That is, if the reflectance is high,
Variation in the resist film thickness increases the amount of line width shift.

An object of the present invention is to provide a high-precision halftone which can improve mask manufacturing accuracy and transfer characteristics by controlling the etching rate of a light-shielding film formed on a semi-translucent film and reducing the reflection. The object of the present invention is to provide a phase shift mask and a halftone type phase shift mask blank.

[0009]

In order to achieve the above object, a halftone type phase shift mask of the present invention is a mask for transferring a fine pattern, wherein a mask pattern formed in a transfer area on a transparent substrate is used. Having a translucent portion that transmits light having an intensity substantially contributing to exposure and a semi-transmissive portion that transmits light having an intensity substantially not contributing to exposure, and the phase of light passing through the semi-transmissive portion. A halftone type phase shift mask capable of maintaining good contrast at the boundary by utilizing the canceling action of light passing near the boundary between the light transmitting part and the semi-light transmitting part. hand,
In a halftone type phase shift mask provided with a light-shielding film at least in a portion that does not substantially contribute to the light canceling action of the semi-light-transmitting portion formed in the mask pattern transfer region, the light-shielding film is transparent from the surface side. A halftone type phase shift mask characterized in that it is made of a different metal material in a thickness direction so that an etching rate increases stepwise or continuously toward a substrate side and has an antireflection function.

The halftone type phase shift mask according to the present invention, in the halftone type phase shift mask, further comprises a non-transferring mask adjacent to a boundary between the mask pattern transfer region and a non-transfer region around the transfer region. The region is a semi-transmissive portion, and a light-shielding film having a predetermined width or more is provided at a portion other than the semi-transmissive portion of the non-transfer region, and the light-shielding film is formed by moving the light-shielding film from the surface side toward the transparent substrate side. A halftone type phase shift mask characterized in that it is made of a different metal material in a thickness direction so that an etching rate increases stepwise or continuously and has an antireflection function.

According to the present invention, a light-shielding film is provided at a portion of the semi-light-transmitting portion formed in both the transfer region and the non-transfer region which should be a complete light-shielding region, thereby completely shielding the light. The etching rate of the light-shielding film is increased from the surface side toward the transparent substrate side, and the light-shielding film is made of a different metal material in the thickness direction so as to have an anti-reflection function. Etching can be performed accurately, and the amount of reflected light from a wafer or an imaging optical system (a lens or the like) as a transfer object at the time of exposure can be reduced by a light-shielding film. Can be prevented from lowering, and the transfer characteristics can be further improved. Therefore, the dimensional accuracy of the transfer pattern with respect to the wafer or the like is improved.

The semi-light-transmitting portion may be made of one kind of film material having both a phase shift function and a light-shielding function, but may have a high transmittance film mainly having a phase shift function and a low transmittance film mainly having a light-shielding function. It may have a multi-layer structure with a film.

The material of the semi-transparent film of the semi-transmissive portion can be a metal, silicon, oxygen, nitrogen or the like as a main constituent element. For example, MoSiO-based materials (MoSiO and its oxides, nitrides, Including oxynitride; the same applies hereinafter), MoSiN-based material, MoSiON-based material, TaS
iO-based material, TaSiN-based material, TaSiON-based material,
WSiO-based materials, WSiN-based materials, WSiON-based materials,
TiSiO material, TiSiN material, TiSiON material, CrSiO material, CrSiN material, CrSi
ON-based material, CrSiF-based material, CrF-based material, CrO
x-based materials and the like.

Further, as the metal material of the light shielding film, chromium (Cr), molybdenum (Mo), tungsten (W),
Metals such as tantalum (Ta), titanium (Ti), vanadium (V), and niobium (Nb) or alloys containing these metals as main components, or oxides, nitrides, oxynitrides, carbides of the above metals, Fluoride and the like. Oxides of these metals (such as Crx Oy), oxynitrides (such as Crx Oy Nz), and fluorides (such as Cx Oy Nz)
rx Fy) has an effect of preventing surface reflection. In addition, the transmittance of the exposure wavelength in the light-shielding region provided with the light-shielding film is equal to 0.1.
5% or less, preferably 0.1% or less. Therefore, the composition and thickness of the light-shielding film are selected so as to make the light-shielding function more complete. The thickness of the light-shielding film having an anti-reflection function is 300 Å or more.
The thickness is preferably about 1000 angstrom or less, and is preferably about 500 to 800 angstrom using a material having a high light-shielding property.

In the halftone type phase shift mask, the semi-light-transmitting portion has a molybdenum-silicon-based semi-light-transmitting film and the light-shielding film is made of chromium containing at least one of oxygen, nitrogen and carbon. Good to do.

Molybdenum silicon (MoSi) -based semi-transparent films have relatively high film stress and tend to cause substrate deformation. However, by laminating a Cr film containing at least one of O, N, and C on the MoSi-based film, the stress can be relaxed or canceled out, and the deformation amount of the substrate can be suppressed to a minute level. In addition, a chromium film containing nitrogen, oxygen, carbon, etc.
Excellent adhesion to semi-translucent films. In particular, a metal film containing nitrogen (for example, CrxNy) has a high adhesion strength.

Further, the halftone type phase shift mask blank of the present invention is a halftone type phase shift mask blank used as a material for manufacturing the above halftone type phase shift mask, and is provided on a transparent substrate. It has a semi-transmissive film that constitutes the translucent portion, and has an anti-reflection function on this semi-transmissive film, and the etching rate changes stepwise or sequentially from the surface side toward the transparent substrate side. It has a light-shielding film made of a metal material.

According to the invention, the light-shielding film is a low-reflection light-shielding film having an anti-reflection function. Therefore, when a mask pattern is drawn by a laser drawing machine, the line width for variations in the resist surface or between the resist surfaces is reduced. The shift amount can be reduced. The antireflection effect is 30 for a wavelength of 248 to 436 nm.
% Is preferable. More preferably, it is 15% or less.

Further, since the light-shielding film having the anti-reflection function is made of a different metal material so that the etching rate increases stepwise or sequentially from the surface side toward the transparent substrate side, the halfway due to excessive over-etching is formed. Damage to the light transmitting film can be prevented, and metal residue on the semi-light transmitting film can be prevented. This is particularly effective in the case of wet etching. If the etching rate of the metal film in contact with the semi-translucent film is low, if the metal on the semi-translucent film is completely removed, over-etching will have an adverse effect such as a change in characteristics of the semi-translucent film. There is a possibility.

In order to increase the etching rate stepwise or sequentially from the surface side of the light-shielding film toward the transparent substrate, for example, a combination of the above metal materials may be laminated, or a single layer or a plurality of layers may be formed. Degree of oxidation of metal material,
The degree of nitriding and the degree of carbonization may be changed stepwise or continuously. Specifically, when the light-shielding film has a plurality of layers, and the semi-light-transmitting film is a MoSi-based material, the metal film that is in contact with the semi-light-transmitting film is the first metal film, and extends from the semi-light-transmitting film side to the surface side. , First
Assuming a metal film / second metal film / third metal film, CrN / C
rON, CrN / CrC, CrN / CrF, CrN / C
Combinations of rO, CrN / CrC / CrON, and the like.

In the halftone type phase shift mask blank, it is preferable that the translucent film is made of a molybdenum / silicon-based material and the light shielding film is made of chromium containing at least one of oxygen, nitrogen and carbon.

[0022]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a first embodiment of a halftone type phase shift mask according to the present invention, and FIG. 2 is a halftone type phase shift mask blank as a material for producing the halftone type phase shift mask of FIG. FIG.

In FIG. 1, reference numeral 1 denotes a transparent substrate made of quartz glass, on which a semi-transparent film 2 of molybdenum silicide (MoSiN) is formed in an appropriate pattern. The semi-transmissive film 2 constitutes a semi-transmissive part that transmits light having an intensity that does not substantially contribute to exposure and shifts the phase of the light by 180 °. The light transmitting portion 6 in the transfer area I
A light-shielding film 5 having an anti-reflection function is formed on the semi-transparent film 2 which does not substantially contribute to the light canceling action near the boundary between the light-transmitting film 2 and the semi-transparent film 2. The light-shielding film 5 includes a chromium nitride (CrN) film 3 and a chromium oxynitride (CrON) film 4 that are sequentially stacked from the semi-translucent film 2 side. The light shielding film 5 is also formed on the semi-transparent film 2 in the non-transfer area other than the transfer area I. The region I ′ is a light passing region of the aperture of the stepper when the halftone phase shift mask is used as a reticle of the stepper. The light-shielding film may be composed of three or more layers such as CrN / CrC / CrON. In this case, the N of CrN is 30 to
Preferably, 50 atomic%, C of CrC is 2 to 20 atomic%, O of CrON is 2 to 50 atomic%, and N is 10 to 35 atomic%.

By providing the light shielding film 5 as described above,
Unnecessary transmission of the exposure light can be prevented, and the low-reflection light-shielding film 5 is used, so that re-reflection of the reflected light from the wafer or the imaging optical system can be reduced, and the transfer characteristics can be greatly improved. . In the light shielding film 5 of the present embodiment, the reflectance at the exposure wavelength can be reduced to about 10%.

As shown in FIG. 2, a halftone type phase shift mask blank is formed on a transparent substrate 1 by a translucent film 2a.
And a low-reflection light-shielding film 5a. The manufacturing process will be described with reference to FIG.

The transparent substrate 1 is a quartz glass substrate (6 inches long × 6 inches wide × 0.25 inch thick) whose main surface is mirror-polished, and its flatness is +1.5 μm (FIG. a)). First, using a molybdenum silicide target on the transparent substrate 1, a single-layer semi-translucent film 2a made of molybdenum silicide for simultaneously adjusting the transmittance and the phase difference is formed by a reactive sputtering method using Ar + N ₂ gas. A film was formed (FIG. 3B). At this time, the flatness increased to +2.5 μm. Next, a chromium nitride film 3a and a chromium oxynitride film 4a are stacked on the semi-translucent film 2a by a sputtering method to obtain a low-reflection light-shielding film 5a. When the flatness of the halftone phase shift mask blank thus obtained was measured, the value was +1.0.
μm. Even when a phase shift mask is manufactured from this mask blank, most of the semi-translucent film 2 is covered with the light-shielding film 5, and a necessary minimum part of the semi-transmissive film 2 is formed.
Is exposed, a high-precision halftone phase shift mask with little substrate deformation (warpage) was obtained. The adhesion between the semi-transparent film 2a and the light-shielding film 5a was also good.

Next, a manufacturing process for manufacturing a phase shift mask using the halftone type phase shift mask blank will be described with reference to FIG.

First, a positive type electron beam resist is applied on the light shielding film 5a and baked to form an electron beam resist film 7a (FIG. 4A). Next, the electron beam resist 7a on the transparent substrate 1 is subjected to electron beam exposure in a desired pattern (FIG. 4).
(B)). Next, after developing the resist film 7a, it is baked to form a resist pattern 7, and then using the resist pattern 7 as a mask, the light shielding film 5a is etched with a predetermined etching solution to form a light shielding film of a predetermined pattern. 5 is formed (FIG. 4C). Note that a positive photoresist film may be formed on the light-shielding film 5a, and pattern writing may be performed using a laser writing machine. In this case, the low-reflection light-shielding film 5a is provided on the semi-transparent film 2a. Therefore, the amount of line width shift with respect to the variation in the resist film thickness can be reduced.
Next, the semi-translucent film 2a is etched using a reactive ion etching (RIE) parallel plate dry etching apparatus, and then the resist pattern 7 is removed (FIG. 4D).

Next, a positive photoresist is applied to the entire surface of the substrate, and is baked to form a photoresist film 8a (FIG. 5A). Next, pattern exposure is performed by a laser drawing machine or the like from the side of the transparent substrate 1 where the resist film 8a is formed (FIG. 5B). In the pattern exposure, when the resist is developed after the exposure, the entire resist formed in the translucent portion and the portion of the resist 8a formed in the semi-translucent portion adjacent to the translucent portion are removed. The pattern exposure is performed such that the resist pattern 8 is formed by leaving the portion (FIG. 5C). Next, the light-shielding film 5 is etched with a predetermined etchant using the resist pattern 8 formed by the exposure and development as a mask (FIG. 5D). Then, by peeling the resist,
Obtain a halftone phase shift mask (FIG. 5)
(E)).

Next, a manufacturing process of the halftone type phase shift mask of the second embodiment will be described with reference to FIGS. In the halftone type phase shift mask of the second embodiment, as shown in FIG. 7E, the semi-transmissive film 2 is mainly composed of a low transmittance film 9 having light transmission characteristics and the phase shift characteristic is mainly possessed. This is an example in which two layers of a high transmittance film 10 are formed.

First, a low transmittance film 9a made of Cr is formed on the transparent substrate 2 by a sputtering method. next,
A coating solution for forming a SiO2 based coating film is dropped on the low transmittance film 9a, spread over the entire surface by a spin coating method, and then baked to volatilize the organic compound of the binder, thereby obtaining an SOG (spin-on-glass). A high transmittance film 10a made of a film is formed, and a semi-transparent film 2a made of a low transmittance film 9a and a high transmittance film 10a is formed. Next, on the high transmittance film 10a,
A plurality of films made of chromium containing nitrogen, oxygen, and the like are formed by a sputtering method to form a low-reflection light-shielding film 5a. Next, a positive electron beam resist is applied and baked to form a resist film 7a. (FIG. 6 (a)).

Next, the resist film 7a in the transfer area on the transparent substrate 1 is subjected to electron beam exposure in a desired pattern (FIG. 6B). Next, a resist pattern 7 is formed by developing the exposed resist film 7a with a developing solution, and the light-shielding film 5 is formed using the resist pattern 7 as a mask.
a is etched with a predetermined etchant to form a light-shielding film 5 having a predetermined pattern (FIG. 6C), and then the high transmittance film 10a is dry-etched (FIG. 6D).
The dry etching of the high transmittance film 10a is performed using a parallel plate type dry etching apparatus of a reactive dry etching type. After that, the resist pattern 7 is peeled off (FIG. 6E).

Next, a positive type electron beam resist is applied to the surface of the transparent substrate 2 and baked to form an electron beam resist film 8.
a (FIG. 7A), and then the resist film 8 is formed.
a light-shielding portion 5 from which a boundary portion that acts to cancel light is removed
Is applied to form an electron beam (FIG. 7B). Next, the resist film 8a is developed to form a resist pattern 8 in a region that does not contribute to the phase shift effect (FIG. 7).
(C)).

Thereafter, using the resist pattern 8 as a mask, the exposed portions of the light shielding film 5 and the low transmittance film 9a are etched with a predetermined etching solution to remove the exposed portions of these films (FIG. 7). (D)) Next, a halftone type phase shift mask is obtained by removing the remaining resist pattern 8 (FIG. 7 (e)).

In this embodiment, in addition to chromium, the low transmittance film 9 may be made of chromium containing a chromium compound such as chromium oxide, chromium nitride, or chromium carbide, or may be molybdenum, tantalum, Alternatively, a material containing silicon in tungsten, or a material containing nitrogen and / or oxygen in these materials may be used.

[0036]

As described in detail above, the halftone phase shift mask of the present invention is provided in a portion which should be a light shielding region without substantially contributing to the light canceling action in the semi-transmissive portion. Since the light-shielding film is provided with an anti-reflection function, the amount of light reflected from the transfer target, such as a wafer or an imaging optical system (such as a lens), which is re-reflected by the light-shielding film at the time of exposure can be reduced. Thus, it is possible to prevent a decrease in contrast and a decrease in line width accuracy due to the above-described factors, thereby further improving transfer characteristics.

In particular, the semi-light-transmitting portion is made of a molybdenum-silicon-based semi-light-transmitting film, and the light-shielding film is made of oxygen, nitrogen,
By using chromium containing at least one of carbon, the film stress of the molybdenum-silicon-based semi-transparent film can be reduced, the substrate deformation can be improved, and the positional accuracy can be improved. Further, a chromium film containing nitrogen, oxygen, and the like can obtain sufficient adhesion to a semi-transparent film as compared with a pure chromium film.

Further, in the halftone type phase shift mask blank of the present invention, the light-shielding film provided on the semi-light-transmitting film at the portion where light is originally to be shielded is constituted by a low-reflection light-shielding film having an antireflection function. When a mask pattern is drawn by a laser drawing machine, the amount of line width shift with respect to variations in the resist film thickness can be reduced. In addition, since the light-shielding film having an anti-reflection function is made of a different metal material so that the etching rate gradually or sequentially increases from the surface side to the transparent substrate side, excessive over-etching is particularly necessary in the case of wet etching. Can prevent the semi-transparent film from being damaged, and can also prevent metal residues on the semi-transparent film.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a first embodiment of a halftone type phase shift mask according to the present invention.

FIG. 2 is a sectional view of a halftone type phase shift mask blank as a material for producing the halftone type phase shift mask of FIG.

FIG. 3 is a process diagram showing a manufacturing process of the halftone type phase shift mask blank of FIG. 2;

FIG. 4 is a process diagram showing a manufacturing process for manufacturing a phase shift mask using the halftone type phase shift mask blank of FIG. 3;

FIG. 5 is a process chart showing a manufacturing process of manufacturing a phase shift mask using the halftone type phase shift mask blank of FIG. 3;

FIG. 6 is a process chart showing a manufacturing process of a second embodiment of the halftone type phase shift mask according to the present invention.

FIG. 7 is a process chart showing a manufacturing process of a second embodiment of the halftone type phase shift mask according to the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 transparent substrate 2 semi-transparent film 5 light-shielding film 6 light-transmitting part

Claims (5)

[Claims] 1. A mask for transferring a fine pattern, comprising:
The mask pattern formed in the transfer region on the transparent substrate has a translucent portion that transmits light having an intensity substantially contributing to exposure and a semi-transmissive portion that transmits light having an intensity substantially not contributing to exposure. By shifting the phase of the light passing through the semi-transparent portion, the contrast of the boundary portion can be kept good by utilizing the canceling action of the light passing near the boundary between the translucent portion and the semi-transparent portion. A halftone phase shift mask comprising a light-shielding film provided at least in a portion that does not substantially contribute to the light canceling action of a semi-transmissive portion formed in a mask pattern transfer region. In the shift mask, the light-shielding film has a different thickness in the thickness direction so that the etching rate increases stepwise or continuously from the surface side to the transparent substrate side and has an antireflection function. A half-tone type phase shift mask comprising a metal material. 2. A non-transfer area adjacent to a boundary between the mask pattern transfer area and a non-transfer area on the periphery of the transfer area is a semi-transmissive part, and a predetermined area is provided on a part of the non-transfer area other than the semi-transparent part. A light-shielding film having the above width is provided. The light-shielding film is formed so as to have an anti-reflection function while the etching rate of the light-shielding film increases stepwise or continuously from the surface side to the transparent substrate side. 2. The halftone type phase shift mask according to claim 1, wherein the halftone type phase shift mask is made of a different metal material in the vertical direction. 3. The semi-transmissive portion includes a molybdenum-silicon-based semi-transmissive film, and the light-shielding film includes oxygen, nitrogen,
3. The halftone phase shift mask according to claim 1, wherein the halftone phase shift mask is made of chromium containing at least one kind of carbon. 4. A halftone type phase shift mask blank used as a material when manufacturing the halftone type phase shift mask according to claim 1, wherein the halftone type phase shift mask blank is formed on a transparent substrate. It has a semi-transmissive film constituting an optical part, and has a light-shielding film on the semi-transparent film, and the etching rate of the light-shielding film is stepwise or continuous from the surface side toward the transparent substrate side. A halftone type phase shift mask blank characterized by being made of a different metal material so as to be faster and have an antireflection function. 5. The half according to claim 4, wherein said semi-transparent film is made of a molybdenum-silicon-based material, and said light-shielding film is made of chromium containing at least one of oxygen, nitrogen and carbon. Tone type phase shift mask blank.