JPH11238821A - Semiconductor module for electric power - Google Patents
Semiconductor module for electric powerInfo
- Publication number
- JPH11238821A JPH11238821A JP5590498A JP5590498A JPH11238821A JP H11238821 A JPH11238821 A JP H11238821A JP 5590498 A JP5590498 A JP 5590498A JP 5590498 A JP5590498 A JP 5590498A JP H11238821 A JPH11238821 A JP H11238821A
- Authority
- JP
- Japan
- Prior art keywords
- top plate
- concave portion
- resin case
- power semiconductor
- convex portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は,電力用半導体モジ
ュールに関し,特に電力用半導体素子を封止する天板の
改善に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module, and more particularly to an improvement of a top plate for sealing a power semiconductor element.
【0002】[0002]
【従来の技術】従来の電力用半導体素子を収納する電力
用半導体モジュールに,図2に示すようなものがある。
図2において,2は金属ベースであり,この金属ベース
2の上に絶縁板4が半田付けされている。この絶縁板4
上に外部に引き出される端子8a,8bと,サイリス
タ,ダイオード,トランジスタ等の電力用半導体素子6
a,6bが載置されている。また,上記電力用半導体素
子6a,6bにも外部に引き出される端子8cと,中継
端子8dが載置され,絶縁板4と端子8a,8bが,ま
た,端子8a,8bと電力用半導体素子6a,6bが,
さらに,電力用半導体素子6a,6bと端子8c,8d
とが半田付けされる。また,上記端子8aの端部は,絶
縁板4から立ち上がり中継端子8bと半田付けされる。2. Description of the Related Art FIG. 2 shows a conventional power semiconductor module for housing a power semiconductor element.
In FIG. 2, reference numeral 2 denotes a metal base, on which an insulating plate 4 is soldered. This insulating plate 4
Terminals 8a and 8b extending to the outside and power semiconductor elements 6 such as thyristors, diodes and transistors
a and 6b are placed. The power semiconductor elements 6a and 6b are also provided with a terminal 8c extending to the outside and a relay terminal 8d, and the insulating plate 4 and the terminals 8a and 8b are provided. The terminals 8a and 8b and the power semiconductor element 6a , 6b
Further, the power semiconductor elements 6a, 6b and the terminals 8c, 8d
Are soldered. The end of the terminal 8a rises from the insulating plate 4 and is soldered to the relay terminal 8b.
【0003】上記金属ベース2の端部に樹脂ケース20
をシリコンゴム等により接着し,このケース20内にシ
リコンゲル等の封止剤14が注入されて,電力用半導体
素子6a,6bが封止される。この後,端子8a,8
b,8cが貫通できる穴を有する天板22をケース20
の上端部に載置し,電力用半導体モジュールが形成され
る。A resin case 20 is attached to the end of the metal base 2.
Is bonded with silicon rubber or the like, and a sealing agent 14 such as silicon gel is injected into the case 20 to seal the power semiconductor elements 6a and 6b. Thereafter, the terminals 8a, 8
The top plate 22 having a hole through which the b and 8c can pass
And a power semiconductor module is formed.
【0004】ところで,上記樹脂ケース20の上端部に
は,天板22と係合できるようにテーパを有する突起2
0aが設けられている。他方天板22は,突起20aと
係合できるテーパを有する爪22aを有している。従っ
て天板22を樹脂ケース20に取り付ける場合,まず端
子8a,8b,8cを天板22の穴22b,22c,2
2dに挿入し,爪22aを突起20aのテーパに沿って
スライドすれば,突起20aと爪22aとが係合し,天
板22が樹脂ケース20に固定される。On the upper end of the resin case 20, a projection 2 having a taper so as to be able to engage with the top plate 22 is provided.
0a is provided. On the other hand, the top plate 22 has a claw 22a having a taper capable of engaging with the projection 20a. Therefore, when attaching the top plate 22 to the resin case 20, first, the terminals 8 a, 8 b, 8 c are connected to the holes 22 b, 22 c, 2
When the claw 22a is inserted into the 2d and the claw 22a is slid along the taper of the protrusion 20a, the protrusion 20a and the claw 22a are engaged, and the top plate 22 is fixed to the resin case 20.
【0005】[0005]
【発明が解決しようとする課題】ところが,樹脂加工さ
れる天板22がその形成時に反ることがあり,爪22a
が突起20aから外れて係合できなくなり,電力用半導
体モジュールが外観不良となることがある。However, the top plate 22 to be processed with resin may warp during its formation.
May be disengaged from the projection 20a and cannot be engaged, and the power semiconductor module may have poor appearance.
【0006】[0006]
【課題を解決するための手段】本発明の電力用半導体モ
ジュールは,金属ベースと,上記金属ベースに半田付け
された電力用半導体素子と,上記金属ベースの端部に接
着された樹脂ケースと,上記樹脂ケース内に上記電力用
半導体素子を封止する封止剤と,上記樹脂ケースの上端
部と係合する天板を備えている。そして,上記樹脂ケー
スの一方のフレームの上端の近傍に形成された第1の凹
部,又は第1の凸部と,上記一方のフレームに対向し,
天板の厚み分短い他方のフレームの上端部に形成された
第2の凹部又は第2の凸部と,上記天板の一方の端部に
形成され,上記第1の凹部又は第1の凸部に係合する第
3の凸部又は第3の凹部と,上記天板の一方の端部に対
向する他方の端部近傍の下部に形成され,上記第2の凹
部又は第2の凸部に係合する第4の凸部又は第4の凹部
とを有するものである。According to the present invention, there is provided a power semiconductor module comprising: a metal base; a power semiconductor element soldered to the metal base; a resin case bonded to an end of the metal base; A sealant for sealing the power semiconductor element is provided in the resin case, and a top plate is engaged with an upper end of the resin case. And a first concave portion or a first convex portion formed near the upper end of the one frame of the resin case, facing the one frame,
A second concave portion or a second convex portion formed at an upper end portion of the other frame shorter by the thickness of the top plate, and a first concave portion or a first convex portion formed at one end of the top plate; A third convex portion or a third concave portion that engages with the portion, and a lower portion near the other end opposite to one end of the top plate, the second concave portion or the second convex portion being formed. And a fourth convex portion or a fourth concave portion that engages with the second member.
【0007】すなわち,金属ベース上に直接又は絶縁板
を介して,電力用半導体素子が半田付けされている。上
記金属ベースの端部に樹脂ケースが接着され,樹脂ケー
ス内に封止剤が注入され,電力用半導体素子が封止され
る。この後,樹脂ケースの上端部に天板が置かれる。That is, a power semiconductor element is soldered on a metal base directly or via an insulating plate. A resin case is bonded to the end of the metal base, a sealing agent is injected into the resin case, and the power semiconductor element is sealed. After that, the top plate is placed on the upper end of the resin case.
【0008】上記樹脂ケースの一方のフレームの上端近
傍に,第1の凹部が形成され,一方のフレームの対向
し,天板の厚み分短い他方のフレームの上端部に,第2
の凹部が形成されている。さらに,上記天板の一方の端
部に,第1の凹部に係合する第3の凸部が形成され,天
板の一方の端部に対向する他方の端部近傍の下部に第2
の凹部に係合する第4の凸部が形成されている。これに
より,第1の凹部に第3の凸部が挿入され,また,第2
の凹部に第4の凸部が挿入されて,天板が樹脂ケースと
一体化される。A first concave portion is formed near the upper end of one frame of the resin case, and a second concave portion is formed at the upper end of the other frame which is opposite to one frame and is shorter by the thickness of the top plate.
Are formed. Further, at one end of the top plate, a third protrusion engaging with the first concave portion is formed, and a second protrusion is provided at a lower portion near the other end opposite to one end of the top plate.
A fourth convex portion that engages with the concave portion is formed. Thereby, the third convex portion is inserted into the first concave portion, and the second convex portion is inserted.
The fourth convex portion is inserted into the concave portion, and the top plate is integrated with the resin case.
【0009】また,上記樹脂ケースの一方のフレームの
上端近傍に,第1の凸部が形成され,一方のフレームに
対向し,天板の厚み分短い他方のフレームの上端部に第
2の凸部が形成されている。さらに,上記天板の一方の
端部に第1の凹部に係合する第3の凸部が形成され,天
板の一方の端部に対向する他方の端部近傍の下部に第2
の凸部に係合する第4の凹部が形成されている。これに
より,第1の凸部に第3の凹部が挿入され,また,第2
の凸部に第4の凹部が挿入されて,天板が樹脂ケースと
一体化される。Further, a first convex portion is formed near the upper end of one frame of the resin case, and a second convex portion is formed on the upper end portion of the other frame which is opposed to one frame and is shorter by the thickness of the top plate. A part is formed. Further, a third convex portion which engages with the first concave portion is formed at one end of the top plate, and a second convex portion is provided at a lower portion near the other end opposite to one end of the top plate.
A fourth concave portion that engages with the convex portion is formed. Thereby, the third concave portion is inserted into the first convex portion, and the second concave portion is inserted.
The fourth concave portion is inserted into the convex portion, and the top plate is integrated with the resin case.
【0010】すなわち,第1の凹部又は凸部が,第3の
凸部又は凹部が係合し,また,第2の凹部又は凸部が第
4の凸部又は凹部に係合して,天板が樹脂ケースと一体
化される。That is, the first concave portion or convex portion engages with the third convex portion or concave portion, and the second concave portion or convex portion engages with the fourth convex portion or concave portion. The board is integrated with the resin case.
【0011】[0011]
【発明の実施の形態】本発明をその1実施の形態を示す
図1に基づき説明する。図1において,2は金属ベース
であり,この金属ベース2の上に絶縁板4が半田付けさ
れている。この絶縁板4上に,外部に引き出される端子
8a,8bと,サイリスタ,ダイオード,トランジスタ
等の電力用半導体素子6a,6bが載置されている。ま
た,上記電力用半導体素子6a,6bにも外部に引き出
される端子8cと,中継端子8dが載置され,絶縁板4
と端子8a,8bが,また,端子8a,8bと電力用半
導体素子6a,6bが,さらに,電力用半導体素子6
a,6bと端子8c,8dとが半田付けされる。また,
上記端子8aの端部は,絶縁板4から立ち上がり中継端
子8dと半田付けされる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to FIG. In FIG. 1, reference numeral 2 denotes a metal base, on which an insulating plate 4 is soldered. On the insulating plate 4, terminals 8a and 8b extending to the outside and power semiconductor elements 6a and 6b such as thyristors, diodes and transistors are mounted. The power semiconductor elements 6a and 6b are also provided with a terminal 8c extending to the outside and a relay terminal 8d.
The terminals 8a and 8b, the terminals 8a and 8b and the power semiconductor elements 6a and 6b, and the power semiconductor element 6
a, 6b and the terminals 8c, 8d are soldered. Also,
The end of the terminal 8a rises from the insulating plate 4 and is soldered to the relay terminal 8d.
【0012】上記金属ベース2の端部に,樹脂ケース1
0をシリコンゴム等により接着し,このケース10内に
シリコンゲル等の封止剤14が注入され,電力用半導体
素子6a,6bが封止される。この後,端子8a,8
b,8cが貫通できる穴を有する天板12を,ケース1
0の上端部に載置し,電力用半導体モジュールが形成さ
れる。At the end of the metal base 2, a resin case 1
0 is adhered with silicon rubber or the like, and a sealing agent 14 such as silicon gel is injected into the case 10 to seal the power semiconductor elements 6a and 6b. Thereafter, the terminals 8a, 8
The top plate 12 having a hole through which the b
The power semiconductor module is formed on the upper end of the power semiconductor module.
【0013】この樹脂ケース10の一方のフレーム10
aの上部の近傍には,凹部10cが形成されている。そ
して,上記一方のフレーム10aに対向し,天板12の
厚み分短い他方のフレーム10bの上端部には,凹部1
0dが形成されている。一方,天板12の一方の端部に
は凸部12aが,また,この端部と対向する他方の端部
近傍の下方には,凸部12bが形成されている。そし
て,天板12の一方の端部の凸部12aをケース10の
一方のフレーム10aの凹部10cに挿入し,天板を下
げてケース10の上端部に載置させたとき,天板12の
下部の凸部12bが,ケース10の他方のフレームの上
端部の凹部10dに係合できるように形成されている。
上記凹部10dと凸部12bのギャップは,0.1〜
0.2mmに設計される。従って,天板12の凸部12
bをケース10の凹部10dに挿入するとき圧入され
る。なお,上記凹部10cと凸部12aのギャップは,
凸部12bを凹部12dに挿着するときに天板12を上
方向に持ち上げられるようにするため,凹部10dと凸
部10bのギャップより少し大きい0.1〜0.5mm
に設計される。One frame 10 of the resin case 10
A recess 10c is formed in the vicinity of the upper part of a. A concave portion 1 is provided at the upper end of the other frame 10b facing the one frame 10a and being shorter by the thickness of the top plate 12.
0d is formed. On the other hand, a projection 12a is formed at one end of the top plate 12, and a projection 12b is formed below the vicinity of the other end facing this end. Then, the convex portion 12a at one end of the top plate 12 is inserted into the concave portion 10c of the one frame 10a of the case 10, and when the top plate is lowered and mounted on the upper end of the case 10, The lower projection 12b is formed so as to be able to engage with the recess 10d at the upper end of the other frame of the case 10.
The gap between the concave portion 10d and the convex portion 12b is 0.1 to
It is designed to be 0.2 mm. Therefore, the protrusion 12 of the top plate 12
When b is inserted into the concave portion 10d of the case 10, it is press-fitted. The gap between the concave portion 10c and the convex portion 12a is
In order to allow the top plate 12 to be lifted upward when the convex portion 12b is inserted into the concave portion 12d, 0.1 to 0.5 mm slightly larger than the gap between the concave portion 10d and the convex portion 10b.
Designed to.
【0014】このため天板12が反っていても,圧入さ
れたとき,凸部12bと凹部10dのギャップが小さい
ため,天板12の凸部12bがケース10の凹部10d
から外れることもない。For this reason, even if the top plate 12 is warped, the gap between the protrusion 12b and the recess 10d is small when the top plate 12 is press-fitted.
There is no departure.
【0015】上記実施の形態では,天板に凸部が形成さ
れ,ケースに凹部が形成されているが,逆に天板に凹部
が形成され,ケースに凸部が形成されてもよい。また,
上記実施の形態では,電力用半導体素子を2素子直列に
接続しているが,これにこだわることなく電力用半導体
素子を1個又は3個以上設け,さらにケース内に抵抗,
コンデンサや小容量の半導体装置を設けてもよい。ま
た,絶縁板を設けずに電力用半導体素子を金属ベースに
直接半田付けされていてもよい。In the above embodiment, the top plate has the convex portion and the case has the concave portion. However, the top plate may have the concave portion and the case may have the convex portion. Also,
In the above embodiment, two power semiconductor elements are connected in series. However, one or three or more power semiconductor elements are provided without being limited to this, and a resistor,
A capacitor or a small-capacity semiconductor device may be provided. Further, the power semiconductor element may be directly soldered to the metal base without providing an insulating plate.
【0016】[0016]
【発明の効果】本発明では,ケースの第1の凹部又は凸
部と,天板の第3の凸部又は凹部とが,また,ケースの
第2の凹部又は凸部と,天板の第4の凸部又は凹部とが
係合され,天板と樹脂ケースとが一体化される。さら
に,第1の凹部又は凸部と第3の凸部又は凹部のギャッ
プが小さく,第2の凹部又は凸部と第4の凸部と凹部と
のギャップが0.1〜0.2mmとさらに小さく設計さ
れ,天板の凸部又は凹部がケースの凹部又は凸部に圧入
され,強固に係合され,天板がケースから外れることが
ない。According to the present invention, the first concave portion or convex portion of the case, the third convex portion or concave portion of the top plate, the second concave portion or convex portion of the case, and the second concave portion or convex portion of the top plate are formed. 4 are engaged with the projections or depressions, and the top plate and the resin case are integrated. Further, the gap between the first concave portion or the convex portion and the third convex portion or the concave portion is small, and the gap between the second concave portion or the convex portion and the fourth convex portion and the concave portion is 0.1 to 0.2 mm. Designed to be small, the projections or recesses of the top plate are pressed into the recesses or projections of the case and are firmly engaged, so that the top plate does not come off the case.
【図1】本発明の電力用半導体モジュールの実施の形態
を示す断面図である。FIG. 1 is a sectional view showing an embodiment of a power semiconductor module of the present invention.
【図2】従来の電力用半導体モジュールの断面図であ
る。FIG. 2 is a sectional view of a conventional power semiconductor module.
2 金属ベース 4 絶縁板 6a,6b 電力用半導体素子 8a,8b,8c 端子 10 ケース 10a (一方の)フレーム 10b (他方の)フレーム 10c,10d 凹部 12 天板 12a,12b 凸部 Reference Signs List 2 metal base 4 insulating plate 6a, 6b power semiconductor element 8a, 8b, 8c terminal 10 case 10a (one) frame 10b (other) frame 10c, 10d recess 12 top plate 12a, 12b protrusion
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01L 25/18 (72)発明者 山川 美香 大阪府大阪市東淀川区淡路2丁目14番3号 株式会社三社電機製作所内──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 25/18 (72) Mika Yamakawa 2-14-3 Awaji, Higashiyodogawa-ku, Osaka-shi, Osaka Inside Sansha Electric Works, Ltd.
Claims (1)
けされた電力用半導体素子と,上記金属ベースの端部に
接着された樹脂ケースと,上記樹脂ケース内に上記電力
用半導体素子を封止する封止剤と,上記樹脂ケースの上
端部と係合する天板を備えた電力用半導体モジュールに
おいて,上記樹脂ケースの一方のフレームの上端の近傍
に形成された第1の凹部,又は第1の凸部と,上記一方
のフレームに対向し,天板の厚み分短い他方のフレーム
の上端部に形成された第2の凹部又は第2の凸部と,上
記天板の一方の端部に形成され,上記第1の凹部又は第
1の凸部に係合する第3の凸部又は第3の凹部と,上記
天板の上記一方の端部に対向する他方の端部近傍の下部
に形成され,上記第2の凹部又は第2の凸部に係合する
第4の凸部又は第4の凹部とを有することを特徴とする
電力用半導体モジュール。1. A metal base, a power semiconductor element soldered to the metal base, a resin case bonded to an end of the metal base, and the power semiconductor element sealed in the resin case. And a first recess formed near an upper end of one frame of the resin case, or a first concave portion formed in the power semiconductor module having a top plate engaged with an upper end of the resin case. A second concave portion or a second convex portion formed at the upper end portion of the other frame, which is opposed to the one frame and is shorter by the thickness of the top plate, and one end portion of the top plate. A third convex portion or a third concave portion formed and engaged with the first concave portion or the first convex portion and a lower portion near the other end of the top plate facing the one end of the top plate. A fourth protrusion or fourth protrusion formed and engaged with the second recess or second protrusion. A power semiconductor module, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5590498A JP3361266B2 (en) | 1998-02-19 | 1998-02-19 | Power semiconductor module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5590498A JP3361266B2 (en) | 1998-02-19 | 1998-02-19 | Power semiconductor module |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11238821A true JPH11238821A (en) | 1999-08-31 |
JP3361266B2 JP3361266B2 (en) | 2003-01-07 |
Family
ID=13012114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5590498A Expired - Fee Related JP3361266B2 (en) | 1998-02-19 | 1998-02-19 | Power semiconductor module |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3361266B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017094189A1 (en) * | 2015-12-04 | 2017-06-08 | 三菱電機株式会社 | Semiconductor module |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7214615B2 (en) | 2019-12-05 | 2023-01-30 | 株式会社東芝 | Connected device |
-
1998
- 1998-02-19 JP JP5590498A patent/JP3361266B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017094189A1 (en) * | 2015-12-04 | 2017-06-08 | 三菱電機株式会社 | Semiconductor module |
JPWO2017094189A1 (en) * | 2015-12-04 | 2018-02-08 | 三菱電機株式会社 | Semiconductor module |
US10483176B2 (en) | 2015-12-04 | 2019-11-19 | Mitsubishi Electric Corporation | Semiconductor module |
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JP3361266B2 (en) | 2003-01-07 |
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