JPH11218918A5 - - Google Patents
Info
- Publication number
 - JPH11218918A5 JPH11218918A5 JP1998022168A JP2216898A JPH11218918A5 JP H11218918 A5 JPH11218918 A5 JP H11218918A5 JP 1998022168 A JP1998022168 A JP 1998022168A JP 2216898 A JP2216898 A JP 2216898A JP H11218918 A5 JPH11218918 A5 JP H11218918A5
 - Authority
 - JP
 - Japan
 - Prior art keywords
 - group
 - substituent
 - alkyl group
 - alkali
 - soluble resin
 - Prior art date
 - Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
 - Granted
 
Links
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP02216898A JP3865919B2 (ja) | 1998-02-03 | 1998-02-03 | ネガ型フォトレジスト組成物 | 
| US09/229,684 US6103449A (en) | 1998-02-03 | 1999-01-13 | Negative working photoresist composition | 
| KR1019990003492A KR100629203B1 (ko) | 1998-02-03 | 1999-02-03 | 네가티브형 포토레지스트 조성물 | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP02216898A JP3865919B2 (ja) | 1998-02-03 | 1998-02-03 | ネガ型フォトレジスト組成物 | 
Publications (3)
| Publication Number | Publication Date | 
|---|---|
| JPH11218918A JPH11218918A (ja) | 1999-08-10 | 
| JPH11218918A5 true JPH11218918A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2005-02-24 | 
| JP3865919B2 JP3865919B2 (ja) | 2007-01-10 | 
Family
ID=12075290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP02216898A Expired - Fee Related JP3865919B2 (ja) | 1998-02-03 | 1998-02-03 | ネガ型フォトレジスト組成物 | 
Country Status (3)
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| KR20000015014A (ko) * | 1998-08-26 | 2000-03-15 | 김영환 | 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물 | 
| KR100400291B1 (ko) * | 1998-11-27 | 2004-02-05 | 주식회사 하이닉스반도체 | 신규의포토레지스트용단량체,그의공중합체및이를이용한포토레지스트조성물 | 
| US6465147B1 (en) * | 1998-12-31 | 2002-10-15 | Hyundai Electronics Industries Co., Ltd. | Cross-linker for photoresist, and process for forming a photoresist pattern using the same | 
| JP3734012B2 (ja) * | 1999-10-25 | 2006-01-11 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 | 
| TWI257528B (en) * | 1999-12-16 | 2006-07-01 | Fuji Photo Film Co Ltd | Positive resist composition | 
| JP4105354B2 (ja) * | 2000-01-17 | 2008-06-25 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 | 
| KR100490278B1 (ko) * | 2000-03-06 | 2005-05-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고분자 화합물, 레지스트 재료 및 패턴 형성 방법 | 
| US6251560B1 (en) * | 2000-05-05 | 2001-06-26 | International Business Machines Corporation | Photoresist compositions with cyclic olefin polymers having lactone moiety | 
| KR100506882B1 (ko) * | 2000-07-13 | 2005-08-08 | 주식회사 하이닉스반도체 | Tips용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물 | 
| TW557304B (en) * | 2000-09-14 | 2003-10-11 | Shinetsu Chemical Co | Polymer, resist composition and patterning process | 
| CN1496496A (zh) * | 2000-11-29 | 2004-05-12 | 纳幕尔杜邦公司 | 聚合物中的保护基,光刻胶及微细光刻的方法 | 
| TW544455B (en) * | 2001-01-17 | 2003-08-01 | Shinetsu Chemical Co | Ether, polymer, resist composition and patterning process | 
| JP4262422B2 (ja) * | 2001-06-28 | 2009-05-13 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物及びそれを用いたパターン形成方法 | 
| JP4337602B2 (ja) * | 2004-03-31 | 2009-09-30 | 日本ゼオン株式会社 | 感放射線組成物、積層体及びその製造方法並びに電子部品 | 
| TWI637998B (zh) * | 2013-11-26 | 2018-10-11 | 住友化學股份有限公司 | 樹脂、光阻組成物,以及光阻圖案之製造方法 | 
| TWI644929B (zh) | 2013-11-26 | 2018-12-21 | 住友化學股份有限公司 | 樹脂、光阻組成物以及光阻圖案的製造方法 | 
| US9514651B2 (en) | 2014-08-19 | 2016-12-06 | Here Global B.V. | Optimal warning distance | 
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US4571375A (en) * | 1983-10-24 | 1986-02-18 | Benedikt George M | Ring-opened polynorbornene negative photoresist with bisazide | 
| US5932391A (en) * | 1995-08-18 | 1999-08-03 | Kabushiki Kaisha Toshiba | Resist for alkali development | 
| JP3804138B2 (ja) * | 1996-02-09 | 2006-08-02 | Jsr株式会社 | ArFエキシマレーザー照射用感放射線性樹脂組成物 | 
| US5843624A (en) * | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material | 
| JP3859353B2 (ja) * | 1998-04-28 | 2006-12-20 | 富士通株式会社 | ネガ型レジスト組成物およびレジストパターンの形成方法 | 
- 
        1998
        
- 1998-02-03 JP JP02216898A patent/JP3865919B2/ja not_active Expired - Fee Related
 
 - 
        1999
        
- 1999-01-13 US US09/229,684 patent/US6103449A/en not_active Expired - Lifetime
 - 1999-02-03 KR KR1019990003492A patent/KR100629203B1/ko not_active Expired - Lifetime