JPH11204525A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the turning-up of metals and the formation of burrs, when dicing ie performed for a semiconductor substrate by etching the metal wiring exposed from the opening of a protecting insulation film at the part of the metal wiring pad from the circuit of a monitoring transistor formed in a scribing region. SOLUTION: When a monitoring transistor (TEG) is formed in a scribing region 105, it is necessary to open a hole in a protective insulation film at a pad part 101 of the TEG for measuring the electrical characteristics of a semiconductor device formed on a semiconductor substrate. That is to say, the part, which is exposed from the opening 102 of the protecting insulation film of the pad of the TSG formed on the scribing region 105 on the semiconductor substrate, is removed by etching. In this way, the problem of the occurrence of the burrs at dicing time can be ressolved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a structure of a scribe region.

[0002]

2. Description of the Related Art Conventionally, the structure of a scribe region of a semiconductor device has been disclosed in Japanese Patent Application Laid-Open No. 01-186652.
A metal wiring pad portion (hereinafter, “pad”) that forms an extraction electrode from a circuit of a monitor transistor (hereinafter, referred to as “TEG”) formed in a scribe region as shown in FIG.
To form a slit,
As shown in FIG. 8, a structure is used in which the protective insulating film in the pad portion of the TEG is not opened as shown in FIG.

[0003]

Conventionally, as shown in FIG. 4, in a portion where a protective insulating film is opened on a scribe region on a semiconductor substrate and the metal is exposed, the metal is turned up when dicing the semiconductor substrate. Burrs may occur and short-circuit with bonding wires or mounting leads to cause electrical failure. SUMMARY OF THE INVENTION It is an object of the present invention to realize a structure of a scribe region in which metal does not turn up when dicing a semiconductor substrate and does not become burrs.

[0004]

In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention is directed to a method of forming a metal electrode for forming an extraction electrode from a circuit of a monitor transistor formed in a scribe region on a semiconductor substrate. The metal wiring exposed from the opening of the protective insulating film at the wiring pad portion is etched.

[0005]

According to the method of manufacturing a semiconductor device of the present invention described above, the T formed in the scribe region on the semiconductor substrate is reduced.
By removing the portion of the EG pad exposed from the opening of the protective insulating film by etching, it is possible to realize a structure of a scribe region in which metal does not turn up to form burrs when dicing the semiconductor substrate.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a method for manufacturing a semiconductor device according to the present invention will be described with reference to the drawings. In FIG. 1, 101 is a metal wiring pad of TEG, and 102 is TEG.
Reference numeral 103 denotes a metal wiring pad of a real element, 104 denotes an opening of the protective insulating film of a pad part of the real element, and 105 denotes a scribe region. When forming a TEG in a scribe region, it is necessary to open a protective insulating film in a pad portion of the TEG in order to measure electrical characteristics of a semiconductor device formed on a semiconductor substrate. Thus, as in the conventional example shown in FIG. 4, the metal 401 exposed from the protective insulating film in the scribe region is turned up along the cut when dicing the semiconductor substrate, and short-circuited with the bonding wire or the lead 407 for mounting, and Cause serious failure. As a countermeasure, a slit 306 may be formed in the pad 301 as in the conventional example shown in FIG. 3, but when a bump is formed on the pad in the actual element area for mounting, the bump is not formed. This causes a problem that plating grows in the scribe area that should not be done. This means that the scribe area where bumps should not be formed when plating for bump formation must be covered with resist, but because the viscosity of the resist is high, the resist does not enter the slit 306 and bubbles are formed. This is because the bubbles pop out during baking to cause defects in the resist. Due to such a problem, a slit 306 cannot be formed in a TEG pad in a scribe area when a bump is formed on a pad in an actual element area for mounting. In this case, as shown in FIG. 2, if the structure of the TEG pad in the scribe area is not exposed, the problem of burr generation at the time of dicing does not occur, but the electrical characteristics of the semiconductor device formed on the semiconductor substrate are reduced. For the minimum number of TEGs required for measurement, it is necessary to open the protective insulating film in the pad portion, and in this portion, the problem of burrs during dicing is inevitable. In contrast, in the present invention, FIG.
Of a semiconductor device formed on a semiconductor substrate as shown in FIG.
By etching the TEG pad metal 101, the problem of burr generation at the time of dicing can be solved.

[0007]

According to the method of manufacturing a semiconductor device of the present invention described above, when dicing a semiconductor substrate, the metal is turned up on the scribe region and becomes a burr, and short-circuits with a bonding wire or a lead for mounting. Thus, it is possible to prevent the occurrence of electrical failure.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a semiconductor device of the present invention.

FIG. 2 is a sectional view showing an example of a conventional semiconductor device.

FIG. 3 is a plan view showing an embodiment of a conventional semiconductor device.

FIG. 4 is a sectional view showing an embodiment of a conventional semiconductor device.

[Explanation of symbols]

101, 201, 301, 401 Metal wiring pad of TEG 102 Opening of protective insulating film in pad section of TEG 103, 203, 403 Metal wiring pad 104 of real element 104, 204 Opening of protective insulating film in pad section of real element 105, 205, 305, 405 Scribe area 306 Pad slit 407 Bonding wire

Claims (1)

[Claims] 1. A metal wiring exposed from an opening of a protective insulating film in a portion of a metal wiring pad forming a lead electrode from a circuit of a monitor transistor formed in a scribe region on a semiconductor substrate. A method for manufacturing a semiconductor device.