JPH0945637A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a cutting residue which causes such specific failure as short-circuiting from occurring by providing an adhesive member consisting of a fragile material for adhering a process pattern to the surface of a semiconductor wafer. SOLUTION: Such an insulation film 6 as a silicon oxide film is formed on a semiconductor wafer 5. Further, a process pattern 3 is formed on it via an adhesive member 8. The adhesive member 8 consists of a material which improves the adhesion property between the process pattern 3 and the insulation film 6 and at the same time is more fragile than the material of the process pattern 3. A high-melt-point metal silicide such as polysilicon, titanium, molybdenum, and tungsten which is a material for exposing more fragility than aluminum can be adopted as the adhesion member. Also, the process pattern and the adhesion member improves the adhesion property between the process pattern and the surface of the semiconductor wafer, prevents the process pattern from being deformed, and achieving adoption of a cutting combination.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device in which a process pattern is formed in a dicing line of a semiconductor wafer on which the semiconductor device is formed.

[0002]

2. Description of the Related Art Generally, in a semiconductor device manufacturing process,
In the dicing line 2 of the semiconductor wafer on which the semiconductor device 1 is formed as shown in FIG. 2, for example, in the manufacturing process of the semiconductor device, for example, an alignment mark, a vernier pattern for measuring misalignment, other dimensions and A test pattern for monitoring characteristics and a process pattern 3 such as an electrode thereof are formed.

A compound semiconductor wafer such as silicon or GaAs having the process pattern 3 in the dicing line 2 as described above is subjected to a lapping step and a dicing step after the semiconductor device 1 is formed on the wafer surface.
Chiped. In the dicing process, the blade of the dicer passes along the dicing line 2 to cut the process pattern. In FIG. 2, 4 is a line through which the blade of the dicer passes.

FIG. 3 shows a sectional view of the process pattern 3. As shown in the figure, the process pattern 3 is formed via a semiconductor wafer 5 and an insulating film 6 such as a silicon oxide film formed thereon. FIG. 4 shows a sectional view when the process pattern having such a structure is cut in the dicing step. A cutting residue adheres to the cross section of the process pattern 3 made of a material that has poor adhesion to the insulating film 6 such as a silicon oxide film and exhibits plasticity. For example, when the process pattern is made of aluminum, since the aluminum has poor adhesion to the insulating film 6 and is easily deformed, a beard-like residue 7 remains. Such a phenomenon is not limited to the case where the insulating film is formed, and is the same when the process pattern 6 made of aluminum is directly formed on the semiconductor wafer 5. When a chip with this residue is assembled, the whiskers-like residue 7 contacts the bonded wire, causing a short circuit, which causes a characteristic failure. Further, in particular, with the recent flip-chip technology, the height of the residue 7 becomes equal to the height of the bump electrode, which causes a characteristic defect,
There is a problem that the reliability of the semiconductor device is lowered.

[0005]

As described above, in the conventional dicing process, when the process pattern in the dicing line is cut, there is a problem that cutting residue that causes defective characteristics occurs. It is an object of the present invention to provide a method for manufacturing a semiconductor device that prevents the generation of this residue and improves reliability.

[0006]

In order to achieve the above object, the present invention provides a semiconductor device in which a process pattern made of a plastic material is formed in a dicing line of a semiconductor wafer on which the semiconductor device is formed. An adhesive member made of a brittle material for adhering the pattern to the surface of the semiconductor wafer is provided.

Further, preferably, when the process pattern is made of aluminum, the adhesive member is made of polysilicon or refractory metal silicide.

[0008]

An embodiment of the present invention will be described below.
FIG. 1 is a sectional view of a process pattern of the present invention. An insulating film 6 such as a silicon oxide film is formed on a semiconductor wafer 5, and a process pattern 3 is formed on the insulating film 6 via an adhesive member 8.

The adhesive member 8 is made of a material that improves the adhesiveness between the process pattern 3 and the insulating film 6, and is selected from a material that is more brittle than the material of the process pattern 3. Further, it may have a structure without the insulating film 6, that is, a structure in which the semiconductor wafer 5 and the process pattern 3 are in direct contact with each other.

Specifically, when the process pattern is made of aluminum, which is a material exhibiting plasticity, a silicide of a refractory metal such as polysilicon, titanium, molybdenum, or tungsten which is a material more brittle than aluminum as an adhesive member. Can be adopted. Alternatively, titanium tungsten may be used. They are,
It can be formed in a normal semiconductor device manufacturing process without using a special manufacturing process. For example, polysilicon or refractory metal silicide can be formed simultaneously with the gate electrode, and titanium tungsten can be formed simultaneously with the contact barrier metal.

The process pattern and the adhesive member are not limited to aluminum and polysilicon, refractory metal silicide or titanium tungsten. A combination that prevents deformation of the pattern and cuts can be adopted. For example, it is possible to employ gold as the process pattern material, a metal film of titanium, chromium or the like as the adhesive member, or a combination of these metal films and an insulating film.

When such a process pattern of the present invention was cut by a dicer, formation of whiskers-like residue unlike the prior art was not seen. Therefore, after the dicing process,
At the time of assembly, a characteristic failure such as contact with a wire does not occur. Also in the flip chip, similarly,
No occurrence of characteristic defects is observed, and the reliability of the semiconductor device can be improved. The shape of the process pattern is not limited to the square shown in FIG. 2 and may have a structure in which a slit is provided in the process pattern.

[0013]

As described above, according to the present invention, in a semiconductor device in which a process pattern is formed in a dicing line, even if the process pattern is cut in a dicing process, it causes a characteristic defect such as a short circuit. It was possible to prevent the occurrence of residue. As a result, the reliability of the semiconductor device could be improved.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a process pattern of the present invention.

FIG. 2 is a plan view of a conventional dicing line.

FIG. 3 is a sectional view of a conventional process pattern.

FIG. 4 is a sectional view of a conventional dicing line after dicing.

[Explanation of symbols]

 1 semiconductor device 2 dicing line 3 process pattern 4 line through which a dicer blade passes 5 semiconductor wafer 6 insulating film 7 whiskers-like residue 8 adhesive member

Claims (2)

[Claims] 1. A semiconductor device having a process pattern made of a plastic material formed in a dicing line of a semiconductor wafer having the semiconductor device formed thereon. An adhesive member made of a brittle material for adhering the process pattern to the surface of the semiconductor wafer. A method of manufacturing a semiconductor device, comprising: 2. The method of manufacturing a semiconductor device according to claim 1, wherein the process pattern is made of aluminum, and the adhesive member is made of polysilicon or refractory metal silicide.