JPH11195552A - Thin-type capacitor and production of the same - Google Patents
Thin-type capacitor and production of the sameInfo
- Publication number
- JPH11195552A JPH11195552A JP1340398A JP1340398A JPH11195552A JP H11195552 A JPH11195552 A JP H11195552A JP 1340398 A JP1340398 A JP 1340398A JP 1340398 A JP1340398 A JP 1340398A JP H11195552 A JPH11195552 A JP H11195552A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ferroelectric
- titanium
- circuit pattern
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Conductive Materials (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、機能性結晶膜で
ある強誘電体膜を回路基板に一体に形成した薄型コンデ
ンサとその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin capacitor in which a ferroelectric film, which is a functional crystal film, is integrally formed on a circuit board, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来、チタン酸ストロンチウム（ＳＴ
Ｏ）、チタン酸ジルコン酸鉛（ＰＺＴ）、チタン酸バリ
ウム（ＢＴＯ）等の強誘電体膜は、これらセラミックス
粉体をバインダ中に設けたスクリーン印刷法や、これら
の中間体酸化物のゾルをゲル化させて薄膜を形成するゾ
ルーゲル法、またはこれらの微粒子を真空中で基板上に
積層するスパッタリングや真空蒸着等を用いて形成され
ていた。2. Description of the Related Art Conventionally, strontium titanate (ST)
O), lead zirconate titanate (PZT), barium titanate (BTO), and other ferroelectric films can be obtained by screen printing using a ceramic powder in a binder, or sol of an oxide of these intermediates. It has been formed by a sol-gel method in which a thin film is formed by gelation, or by sputtering or vacuum deposition in which these fine particles are laminated on a substrate in a vacuum.
【０００３】[0003]
【発明が解決しようとする課題】上記従来の技術の場
合、近年電子機器の高度化や多機能化、小型化にともな
い、より高性能である結晶膜を用いた機能膜が要求され
ている。しかし、上記印刷による形成方法の場合、結晶
膜を得るものではなく、素子の性能が劣るものであっ
た。In the case of the above-mentioned conventional technology, a functional film using a crystal film having higher performance is required in recent years as electronic devices have become more sophisticated, multifunctional, and miniaturized. However, in the case of the above-mentioned printing method, a crystalline film is not obtained, and the performance of the element is inferior.
【０００４】さらに、上記スパッタリング等の場合、形
成した薄膜の結晶成長を促すために、５００℃〜６００
℃の高温での加熱処理工程があり、この高温での工程に
より形成した薄膜が剥離したり、亀裂が生じたり、基板
との反応が発生したりするという問題があった。Further, in the case of the above-mentioned sputtering or the like, in order to promote crystal growth of the formed thin film, a temperature of 500.degree.
There is a heat treatment process at a high temperature of ℃, and there has been a problem that a thin film formed by the process at this high temperature is peeled off, cracked, or reacted with a substrate.
【０００５】この発明は上記従来の技術の問題点に鑑み
てなされたものであり、強誘電体の結晶膜を簡単な構成
で比較的低温で形成することが可能な薄型コンデンサと
その製造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and provides a thin capacitor capable of forming a ferroelectric crystal film with a simple structure at a relatively low temperature and a method of manufacturing the same. The purpose is to provide.
【０００６】[0006]
【課題を解決するための手段】この発明の薄型コンデン
サは、絶縁性の基板の表面に所定の回路パターンと下部
電極が形成されており、この下部電極の表面に所定の形
状のチタン膜が形成されている。さらにこのチタン膜の
表面には、結晶性の強誘電体膜が形成され、この強誘電
体膜と上記回路パターンを接続した上部電極が形成され
ている。上記強誘電体は、ＰＺＴまたはＳＴＯの結晶で
ある。According to the thin capacitor of the present invention, a predetermined circuit pattern and a lower electrode are formed on the surface of an insulating substrate, and a titanium film of a predetermined shape is formed on the surface of the lower electrode. Have been. Further, a crystalline ferroelectric film is formed on the surface of the titanium film, and an upper electrode connecting the ferroelectric film and the circuit pattern is formed. The ferroelectric is a PZT or STO crystal.
【０００７】またこの発明は、絶縁性の基板の表面に所
定の形状の回路パターンと下部電極とを形成し、次にマ
スキングを施して所定の位置にチタン膜を設け、このチ
タン膜の表面に結晶性の強誘電体膜を形成する。そし
て、この強誘電体膜と上記回路パターンの所定の位置と
を接続するように上部電極を形成する薄型コンデンサの
製造方法である。Further, according to the present invention, a circuit pattern having a predetermined shape and a lower electrode are formed on the surface of an insulating substrate, and then masking is performed to provide a titanium film at a predetermined position. A crystalline ferroelectric film is formed. Then, a method of manufacturing a thin capacitor in which an upper electrode is formed so as to connect the ferroelectric film to a predetermined position of the circuit pattern.
【０００８】さらにこの発明は、上記チタン膜が形成さ
れた上記基板を、所望の強誘電体を形成する元素を含有
したアルカリ溶液中に浸漬し、１００℃〜２００℃の温
度で、１気圧以上飽和蒸気圧以下の圧力下で、上記チタ
ン膜表面に結晶性の強誘電体膜を形成し、この後、上記
強誘電体膜と上記電極とを接続する上部電極を形成する
薄型コンデンサの製造方法である。[0008] Further, the present invention is characterized in that the substrate on which the titanium film is formed is immersed in an alkaline solution containing an element for forming a desired ferroelectric substance, and at a temperature of 100 ° C to 200 ° C and at least 1 atm. A method of manufacturing a thin capacitor in which a crystalline ferroelectric film is formed on the surface of the titanium film under a pressure equal to or lower than the saturated vapor pressure, and thereafter, an upper electrode for connecting the ferroelectric film and the electrode is formed. It is.
【０００９】上記チタン膜は、スパッタリングまたはチ
タン粒子を溶射するものである。また、上記上部電極
は、上記強誘電体と上記回路パターンとの所定の部位が
接続するように印刷またはスパッタリングにより形成す
るものである。The titanium film is formed by sputtering or spraying titanium particles. Further, the upper electrode is formed by printing or sputtering so that predetermined portions of the ferroelectric and the circuit pattern are connected.
【００１０】[0010]
【発明の実施の形態】以下、この発明の実施形態につい
て図面に基づいて説明する。図１はこの発明の実施の形
態の薄型コンデンサ１０を設けた回路基板を示し、所定
の形状の絶縁性基板１２の表面に銅箔やアルミニウム箔
からなる回路パターン１１及びその延長として下部電極
１４が形成されている。絶縁性基板１２は、ガラスエポ
キシ、フェノール、ポリイミド、ポリフェニレンエーテ
ル（ＰＰＥ）、ＰＰＯ、テフロン等の有機ポリマーや無
機物質からなり、用途に合わせて適宜選択可能である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a circuit board provided with a thin capacitor 10 according to an embodiment of the present invention. A circuit pattern 11 made of copper foil or aluminum foil and a lower electrode 14 as an extension thereof are provided on a surface of an insulating board 12 having a predetermined shape. Is formed. The insulating substrate 12 is made of an organic polymer or an inorganic substance such as glass epoxy, phenol, polyimide, polyphenylene ether (PPE), PPO, or Teflon, and can be appropriately selected according to the application.
【００１１】下部電極１４の表面には、所定の形状のチ
タン膜１８が形成されている。このチタン膜１８は、チ
タンのみの膜の他、酸化チタン等のチタン化合物やチタ
ン合金を含むものである。さらにこのチタン膜１８の表
面には、結晶性の強誘電体膜２０が形成され、この強誘
電体膜２０と回路パターン１１の所定部位を接続した上
部電極２４が形成されている。強誘電体２０は、チタン
酸ジルコン酸鉛（以下ＰＺＴと称す）またはチタン酸ス
トロンチウム（以下ＳＴＯと称す）の結晶である。On the surface of the lower electrode 14, a titanium film 18 having a predetermined shape is formed. The titanium film 18 contains a titanium compound such as titanium oxide and a titanium alloy in addition to a film of titanium only. Further, a crystalline ferroelectric film 20 is formed on the surface of the titanium film 18, and an upper electrode 24 connecting the ferroelectric film 20 and a predetermined portion of the circuit pattern 11 is formed. The ferroelectric 20 is a crystal of lead zirconate titanate (hereinafter, referred to as PZT) or strontium titanate (hereinafter, referred to as STO).
【００１２】この実施形態の薄型コンデンサの製造方法
は、先ず、絶縁性基板１２の表面に銅箔やアルミニウム
箔を貼り付け、図示しないレジストを塗布し、所定の回
路のパターンを貼り付ける。次に露光、現像し、レジス
トをパターンに対応した形状にした後、エッチング処理
し、所望の回路パターン２０を形成する。In the method of manufacturing a thin capacitor according to this embodiment, first, a copper foil or an aluminum foil is attached to the surface of the insulating substrate 12, a resist (not shown) is applied, and a predetermined circuit pattern is attached. Next, exposure and development are performed to form a resist into a shape corresponding to the pattern, and then an etching process is performed to form a desired circuit pattern 20.
【００１３】次に、回路基板１０の表面及び側面にソル
ダーレジスト１６を塗布し、後にチタン膜１８を形成す
る部分の下部電極１４を露出させておく。さらに、下部
電極１４の表面をソフトエッチングし、メタルマスキン
グを施して、下部電極１４の表面が露出するようにす
る。次に、下部電極１４の表面にチタンや酸化チタンを
スパッタリングや溶射し、チタン膜１８を形成する。こ
の後、メタルマスクを除去する。Next, a solder resist 16 is applied to the surface and side surfaces of the circuit board 10 to expose the lower electrode 14 where a titanium film 18 will be formed later. Further, the surface of the lower electrode 14 is soft-etched and subjected to metal masking so that the surface of the lower electrode 14 is exposed. Next, titanium or titanium oxide is sputtered or sprayed on the surface of the lower electrode 14 to form a titanium film 18. After that, the metal mask is removed.
【００１４】さらにチタン膜１８上に、いわゆる水熱合
成法により、強誘電体膜のＰＺＴ種結晶膜を形成する。
種結晶膜を形成する水熱合成法では、最初にＰｂ（Ｏ
Ｒ）2、Ｚｒ（ＯＲ）4、Ｔｉ（ＯＲ）4を含む強アルカ
リ溶液に、下部電極１４が露出した絶縁性基板１２を浸
し、２００℃以下、２〜３気圧程度に設定されたオート
クレーブに、溶液とともに入れる。これによりチタン膜
１８のチタンと密着性の強いＰＺＴ種結晶膜を形成す
る。Further, a ferroelectric PZT seed crystal film is formed on the titanium film 18 by a so-called hydrothermal synthesis method.
In the hydrothermal synthesis method for forming a seed crystal film, first, Pb (O
The insulating substrate 12 with the lower electrode 14 exposed is immersed in a strong alkaline solution containing R) 2 , Zr (OR) 4 , and Ti (OR) 4. , With solution. Thereby, a PZT seed crystal film having strong adhesion to titanium of the titanium film 18 is formed.
【００１５】ここで強アルカリ溶液のＲは、Ｐｂ（Ｏ2
Ｃ11Ｈ19）2＝（Ｐｂ（ＤＰＭ）2）、Ｐｂ（Ｃ
2Ｈ5）4、（Ｃ2Ｈ5）3ＰｂＯＣＨ2Ｃ（ＣＨ3）3、Ｚｒ
（ＤＰＭ）2、Ｚｒ（ｔ−ＯＣ4Ｈ9）4、Ｔｉ（ｉ−ＯＣ
3Ｈ7）4、Ｔｉ（ＤＰＭ）2、Ｓｒ（ＯＣ2Ｈ40ＣＨ3）2
等の有機金属の有機部組成を示し、適宜選択し用いる。Here, R of the strong alkaline solution is Pb (O 2
C 11 H 19 ) 2 = (Pb (DPM) 2 ), Pb (C
2 H 5) 4, (C 2 H 5) 3 PbOCH 2 C (CH 3) 3, Zr
(DPM) 2 , Zr (t-OC 4 H 9 ) 4 , Ti (i-OC
3 H 7) 4, Ti ( DPM) 2, Sr (OC 2 H 40 CH 3) 2
And the like.
【００１６】次に、ＰＺＴ結晶膜が所定の厚みを有する
ように、Ｐｂ（ＯＲ）2、Ｚｒ（ＯＲ）4、Ｔｉ（ＯＲ）
等を含む強アルカリ溶液に絶縁性基板１２を浸し、２０
０℃以下、２〜３気圧程度に設定されたオートクレーブ
に入れ、水熱合成反応を起こし、ＰＺＴ結晶膜２０を形
成する。Next, the PZT crystal film has a predetermined thickness.
So, Pb (OR)Two, Zr (OR)Four, Ti (OR)
The insulating substrate 12 is immersed in a strong alkaline solution containing
Autoclave set at 0 ° C or less and about 2-3 atmospheres
, Causing a hydrothermal synthesis reaction to form the PZT crystal film 20
To achieve.
【００１７】そして、アルカリ溶液から絶縁性基板１２
を取り出し、中和処理を施した後、絶縁性基板１２表面
に付着した中和処理液等を洗浄除去し、乾燥させる。ま
たＰＺＴ結晶膜２０の周縁部にショート防止レジスト２
２を印刷し焼き付ける。Then, the insulating substrate 12 is removed from the alkaline solution.
Is taken out and subjected to a neutralization treatment, and then a neutralization treatment liquid and the like adhering to the surface of the insulating substrate 12 are washed away, and dried. Further, a short prevention resist 2 is provided on the periphery of the PZT crystal film 20.
Print and print 2.
【００１８】次にＰＺＴ結晶膜２０と回路パターン１１
の所定の部位とを接続させるために上部電極２４を形成
する。上部電極２４は、銅、パラジウム、白金等場合、
スパッタリングを用い、また銀・パラジウム、ニッケ
ル、銅等の導電性ペーストは、印刷により上部電極２４
を設ける。また、これらの表面に樹脂のオーバーコート
２６を印刷し焼き付け、薄型コンデンサ１０を形成す
る。Next, the PZT crystal film 20 and the circuit pattern 11
The upper electrode 24 is formed in order to connect to a predetermined portion of the upper electrode 24. When the upper electrode 24 is made of copper, palladium, platinum, or the like,
Sputtering is used, and a conductive paste such as silver / palladium, nickel, or copper is printed on the upper electrode 24 by printing.
Is provided. Further, a resin overcoat 26 is printed and baked on these surfaces to form the thin capacitor 10.
【００１９】薄型コンデンサ１０を設けた絶縁性基板１
２は、さらに他の部材が実装され、回路基板を形成した
り、あるいは、多層基板用の内層基板として部品内蔵多
層基板を完成させる。Insulating substrate 1 provided with thin capacitor 10
2 is a circuit board formed on which other members are mounted, or a component built-in multilayer board is completed as an inner layer board for the multilayer board.
【００２０】ここで、多層基板用内層基板とするには、
各層の表面に露出しＴ赤色パターンの書知恵表面を黒化
処理し、接着性を高めて積層する。積層に際しては、所
定温度に加熱し、プレスして、多層の絶縁性基板１２に
形成された薄型コンデンサ１０を形成する。Here, in order to form an inner layer substrate for a multilayer substrate,
The writing surface of the T-red pattern exposed on the surface of each layer is subjected to blackening treatment, and the layers are laminated with increased adhesiveness. At the time of lamination, the thin capacitor 10 formed on the multilayer insulating substrate 12 is formed by heating to a predetermined temperature and pressing.
【００２１】なお、この水熱合成法では、ＰＺＴ結晶膜
２０以外にも、チタン酸ストロンチウム（ＳＴＯ）結晶
膜を形成することができる。この場合も上記と同様に、
絶縁性基板１２に下部電極１４、レジスト１６、チタン
膜１８を形成した後、ＰＺＴ結晶膜２０と同様に水熱合
成法でＳＴＯ結晶膜を形成する。In this hydrothermal synthesis method, a strontium titanate (STO) crystal film other than the PZT crystal film 20 can be formed. In this case, as above,
After forming the lower electrode 14, the resist 16, and the titanium film 18 on the insulating substrate 12, an STO crystal film is formed by a hydrothermal synthesis method in the same manner as the PZT crystal film 20.
【００２２】この場合、先ずチタン膜１８をＳｒ（Ｏ
Ｒ）2等を含む強アルカリ溶液に、下部電極１４、レジ
スト１６チタン膜１８を有する絶縁性基板１２を浸し、
２００℃以下、２〜３気圧程度に設定されたオートクレ
ーブに溶液とともに入れる。ここで強アルカリ溶液のＲ
は、ＰＺＴ結晶膜２０形成のときに使用した強アルカリ
溶液に含まれる化合物のＲと同じものである。これによ
り、これによりチタン膜１８のチタンと密着性の強いＳ
ＴＯ種結晶膜を形成する。In this case, first, the titanium film 18 is made of Sr (O
R) The insulating substrate 12 having the lower electrode 14, the resist 16 and the titanium film 18 is immersed in a strong alkaline solution containing 2 or the like,
The solution is put together with the solution in an autoclave set at 200 ° C. or lower and about 2 to 3 atm. Where R
Is the same as R of the compound contained in the strong alkaline solution used when forming the PZT crystal film 20. As a result, S which has strong adhesion to titanium of the titanium film 18 is thereby formed.
A TO seed crystal film is formed.
【００２３】次に、ＳＴＯ結晶膜が所定の厚みを有する
ように、Ｓｒ（ＯＲ）2、Ｔｉ（ＯＲ）4等を含む強アル
カリ溶液に絶縁性基板１２を浸し、２００℃以下、２〜
３気圧程度に設定されたオートクレーブに入れ、水熱合
成反応を起こし、ＳＴＯ結晶膜を形成する。Next, the insulating substrate 12 is immersed in a strong alkaline solution containing Sr (OR) 2 , Ti (OR) 4 or the like so that the STO crystal film has a predetermined thickness.
It is placed in an autoclave set at about 3 atm, and a hydrothermal synthesis reaction is caused to form an STO crystal film.
【００２４】ＰＺＴ結晶膜やＳＴＯ結晶膜などの強誘電
体膜は、それ自体が分極しているため絶縁油中での分極
処理が必要なく、またチタン膜上であればどのような形
状の基板にでも形成することができ、様々な電子機器に
低コストで設けることができる。また、強誘電体膜の表
面には凹凸があるが、内部は空隙が少なく緻密であるこ
とから、製造中の破損等が少ない。さらに、大面積化が
容易で、膜厚も適宜の厚さに設定することができ、形成
する基板１２の種類も選ばない。A ferroelectric film such as a PZT crystal film or an STO crystal film is itself polarized and does not require a polarization treatment in an insulating oil. And can be provided in various electronic devices at low cost. Further, although the surface of the ferroelectric film has irregularities, the inside has few voids and is dense, so that there is little breakage during manufacturing. Further, the area can be easily increased, the film thickness can be set to an appropriate thickness, and the type of the substrate 12 to be formed is not limited.
【００２５】なおこの発明は、上述した実施形態に限定
されるものではなく、使用する各部材の材料、製造方法
等は適宜変更することができる。Note that the present invention is not limited to the above-described embodiment, and the material of each member used, the manufacturing method, and the like can be appropriately changed.
【００２６】[0026]
【発明の効果】この発明の薄型コンデンサは、基板表面
のチタン膜に強誘電体膜を比較的低温で一体に形成する
ことが可能であることから、種々の絶縁性基板の表面に
直接コンデンサを形成することができ、形状や材質等へ
の制約がなく、しかも簡単な設備で製造することができ
る。According to the thin capacitor of the present invention, since a ferroelectric film can be integrally formed on a titanium film on a substrate surface at a relatively low temperature, capacitors can be directly formed on various insulating substrate surfaces. It can be formed, has no restrictions on the shape and material, and can be manufactured with simple equipment.
【図１】この発明の実施形態の薄型コンデンサを設けた
回路基板を示す断面図である。FIG. 1 is a sectional view showing a circuit board provided with a thin capacitor according to an embodiment of the present invention.
１０ 薄型コンデンサ １２ 絶縁性基板 １４ 下部電極 １６ ソルダーレジスト １８ チタン膜 ２０ ＰＺＴ結晶膜 ２２ ショート防止レジスト ２４ 上部電極 ２６ オーバーコート DESCRIPTION OF SYMBOLS 10 Thin capacitor 12 Insulating substrate 14 Lower electrode 16 Solder resist 18 Titanium film 20 PZT crystal film 22 Short prevention resist 24 Upper electrode 26 Overcoat
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山崎 盛勝 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Morikatsu Yamazaki 3158 Shimookubo, Osawano-cho, Kamishinkawa-gun, Toyama Prefecture Hokuriku Electric Industry Co., Ltd.
Claims (5)
ンと下部電極が形成され、この下部電極の表面にチタン
膜が設けられ、このチタン膜の表面に電気化学的に形成
された結晶性の強誘電体膜を備え、この強誘電体膜と上
記回路パターンを接続した上部電極が設けられた薄型コ
ンデンサ。A predetermined circuit pattern and a lower electrode are formed on a surface of an insulating substrate, a titanium film is provided on a surface of the lower electrode, and a crystalline film formed electrochemically on the surface of the titanium film. A thin capacitor comprising the above ferroelectric film and an upper electrode connecting the ferroelectric film and the circuit pattern.
結晶である請求項１記載の薄型コンデンサ。2. The thin capacitor according to claim 1, wherein the ferroelectric is a crystal of PZT or STO.
ンと下部電極を形成し、この下部電極の表面の所定の部
位にチタン膜を形成し、このチタン膜が形成された上記
基板を、所望の強誘電体を形成する元素を含有したアル
カリ溶液中に浸漬し、１００℃〜２００℃の温度で、１
気圧以上飽和蒸気圧以下の圧力下で、上記チタン膜表面
に結晶性の強誘電体膜を形成し、この後、上記強誘電体
膜と上記電極とを接続する上部電極を形成する薄型コン
デンサの製造方法。3. A predetermined circuit pattern and a lower electrode are formed on a surface of an insulating substrate, a titanium film is formed on a predetermined portion of the surface of the lower electrode, and the substrate on which the titanium film is formed is It is immersed in an alkaline solution containing an element for forming a desired ferroelectric substance, and at a temperature of 100 ° C. to 200 ° C., 1
Under a pressure equal to or higher than the atmospheric pressure and equal to or lower than the saturated vapor pressure, a crystalline ferroelectric film is formed on the surface of the titanium film, and thereafter, an upper electrode for connecting the ferroelectric film and the electrode is formed. Production method.
チタン粒子を溶射するものである請求項３記載の薄型コ
ンデンサの製造方法。4. The method according to claim 3, wherein the titanium film is formed by sputtering or spraying titanium particles.
路パターンとの所定の部位が接続するように印刷または
スパッタリングにより形成するものである請求項３記載
の薄型コンデンサの製造方法。5. The method according to claim 3, wherein the upper electrode is formed by printing or sputtering so that predetermined portions of the ferroelectric and the circuit pattern are connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340398A JPH11195552A (en) | 1998-01-06 | 1998-01-06 | Thin-type capacitor and production of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340398A JPH11195552A (en) | 1998-01-06 | 1998-01-06 | Thin-type capacitor and production of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11195552A true JPH11195552A (en) | 1999-07-21 |
Family
ID=11832174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1340398A Pending JPH11195552A (en) | 1998-01-06 | 1998-01-06 | Thin-type capacitor and production of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11195552A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001296263A (en) * | 2000-02-07 | 2001-10-26 | Japan Organo Co Ltd | Conductivity meter, conductivity measuring electrode and manufacturing method thereof |
| JP2002025854A (en) * | 2000-07-04 | 2002-01-25 | Alps Electric Co Ltd | Thin-film capacitor |
| JP2005064413A (en) * | 2003-08-20 | 2005-03-10 | National Institute Of Advanced Industrial & Technology | Parallel flat plate capacitor |
| JP2006286690A (en) * | 2005-03-31 | 2006-10-19 | Casio Comput Co Ltd | Semiconductor device and its manufacturing method |
| JP2007251052A (en) * | 2006-03-17 | 2007-09-27 | Fujitsu Ltd | Capacitor and its manufacturing method |
| JP4513172B2 (en) * | 2000-05-26 | 2010-07-28 | 宇部興産株式会社 | PZT crystal film element and method for manufacturing the same |
-
1998
- 1998-01-06 JP JP1340398A patent/JPH11195552A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001296263A (en) * | 2000-02-07 | 2001-10-26 | Japan Organo Co Ltd | Conductivity meter, conductivity measuring electrode and manufacturing method thereof |
| JP4513172B2 (en) * | 2000-05-26 | 2010-07-28 | 宇部興産株式会社 | PZT crystal film element and method for manufacturing the same |
| JP2002025854A (en) * | 2000-07-04 | 2002-01-25 | Alps Electric Co Ltd | Thin-film capacitor |
| JP2005064413A (en) * | 2003-08-20 | 2005-03-10 | National Institute Of Advanced Industrial & Technology | Parallel flat plate capacitor |
| JP2006286690A (en) * | 2005-03-31 | 2006-10-19 | Casio Comput Co Ltd | Semiconductor device and its manufacturing method |
| JP2007251052A (en) * | 2006-03-17 | 2007-09-27 | Fujitsu Ltd | Capacitor and its manufacturing method |
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