JPH11191208A - Manufacture of thin film magnetic head slider - Google Patents

Abstract

PROBLEM TO BE SOLVED: To also chamfer the peripheral corner part and thread face part of an air bearing face in a plasma etching process by irradiating a rail pattern face of a slider with an ion beam at a 1st angle for cutting it in a prescribed undercut amount and etching peripheral corner and thread face part of the slider at a prescribed angle. SOLUTION: Each element array 15 forming a prescribed rail-form mask pattern is mounted on a rotary late 42 fitted to a rotary shaft 41 of a plasma etching device 49, and plasma etching is performed by emitting argon ion Ar+ from a plasma ion gun 43 at an emitting angle of 5-20 degrees. Thus, it is possible to form a prescribed rail pattern by etching the other part of an air bearing surface(ABS) into a groove form than the part where ABS mask pattern is formed, and also to chamfer the corner part and thread face part on the ABS side of each slider in a prescribed chamfering amount when cutting the pattern into each slider.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film magnetic head used in a magnetic disk drive and the like, and more particularly to a slider having a flying surface formed by forming a rail pattern of a predetermined shape on a surface facing a magnetic recording medium. The present invention relates to a method for manufacturing a thin-film magnetic head slider having a thin-film magnetic head element on the air outflow end side.

[0002]

2. Description of the Related Art A thin film magnetic head has a thin film magnetic head element formed on a rear end surface of a ceramic block called a slider, and a surface of the slider facing a magnetic recording medium, that is, an air bearing surface. Surfac
e: hereinafter referred to as ABS) has a rail pattern of a predetermined shape. For this reason, when the magnetic recording medium rotates, the slider is given a lifting force by the high-speed airflow flowing from the tapered portion at the front end of the rail, and maintains a gap of about 0.1 μm from the surface of the magnetic recording medium. The head floats so that the head tip does not directly contact the magnetic recording medium. Such a thin film magnetic head is generally called a floating magnetic head.

The ABS of the slider of such a floating magnetic head has a complicated rail pattern formed in order to keep the flying height constant. Usually, this type of slider has a number of thin-film magnetic head elements formed on a ceramic substrate made of AlTiC (Al ₂ O ₃ —TiC) or the like, and then cuts the substrate into a bar to form an element row (hereinafter referred to as a row). After performing a predetermined polishing process, the row is processed to obtain a slider in which a rail pattern of a predetermined shape is formed on the ABS.

FIGS. 10 to 13 are views showing an example of the above-mentioned slider manufacturing process. Each of the slider manufacturing steps will be specifically described with reference to FIGS. 10 to 13. FIG. FIG. 10 is a view showing a row slicing step, FIG. 11 is a view showing a photolithography step, FIG. 12 is a view showing a plasma etching step, and FIG. FIG.

[0005] As shown in FIG. 10 (a), a ceramic substrate 50 made of AlTiC (Al ₂ O ₃ —TiC) or the like is used.
A plurality of thin film magnetic head elements 51, 51,... Are formed in the vertical and horizontal directions on the surface of the magnetic head wafer 50a by a wafer process. Next, FIG.
0 (b), the magnetic head wafer 50a
Are cut into rows 55, 55,. After this,
After the cut surface is polished and a predetermined throat height (the length of the pole portion of the thin-film magnetic head element) is processed to a target value, the stress remaining by the throat height processing is removed by polishing. After that, as shown in FIG. 10C, the rows 55, 55... Are arranged at predetermined intervals on the substrate 60 such that the cut surface (polished surface) is the upper surface and the lower surface. I do.

Then, as shown in FIG. 11A, a photosensitive resin film 70 such as a resist or a dry film is applied on the cut surfaces of the rows 55, 55... Arranged on the substrate 60. . Thereafter, a photomask having a rail pattern of a predetermined shape formed thereon is disposed thereon, and light beams such as ultraviolet rays are irradiated on the photomask to expose the photosensitive resin film 70. Next, each row 55 in which the photosensitive resin film 70 is exposed to a predetermined rail-shaped mask pattern is immersed in a developing solution, and the photosensitive resin film 55 other than the exposed portion is dissolved in the developing solution and removed. . Then, FIG.
As shown in (b), each row 55 in which predetermined mask patterns 70a, 70a... Are formed on the cut surface is obtained.

Next, as shown in FIG. 12, each row 55 having predetermined mask patterns 70a, 70a...
, And plasma etching (ion milling) is performed by irradiating argon ions Ar ⁺ from the plasma ion gun 83 (irradiation angle θ = 30 to 60 degrees). When argon ions Ar ⁺ are irradiated from the plasma ion gun 83, the argon ions Ar ⁺
It is supplied via a shower head or a grid 85 provided in front of the plasma ion gun 83, and is directed substantially in the X-axis direction. On the other hand, the rotating plate 82 is arranged to be inclined by θ with respect to the X axis. Assuming that the angle between the X axis and the rotating plate 82 is the irradiation angle (θ), the argon ions Ar ⁺ are irradiated while being inclined by the irradiation angle (θ).

The plasma etching apparatus 80 is provided with a connection pipe 84 connected to a vacuum pump (not shown) for evacuating the inside of the apparatus. By this ion milling, the cut surface other than the portions where the mask patterns 70a, 70a... Are formed is etched in a groove shape, and the portions where the mask patterns 70a, 70a. When the row 55 is cleaned with a cleaning liquid to remove the mask patterns 70a, 70a,.
As shown in FIG. 3A, the rail pattern 57 having a predetermined shape is used.
Is obtained. When the row 55a is cut for each thin-film magnetic head element, a slider 58 having a rail pattern 57 as shown in FIG. 13B is obtained.

[0009]

When the plasma etching is performed as described above, FIG. 14B (FIG. 1)
4 (a) is a view showing a row state before the plasma etching processing, and FIG. 14 (b) is a view showing a row state during the plasma etching processing.) As shown in FIG. Argon ion Ar on 71 side
^The substance X scattered by the ⁺ irradiation is attached again. In order to prevent such reattachment, the ion milling angle (irradiation angle θ of argon ions Ar ⁺ ) is set to 30 to 60 degrees. However, when ion milling is performed at this angle, as shown in FIG. 14B, a corner Y around the ABS is formed.
The corner Z of the mask pattern 70a is held at a right angle.

When the corner Y around the ABS is held at a right angle, the corner Y comes into contact with the magnetic recording medium and damages the contact surface of the magnetic recording medium, or comes into contact with the magnetic recording medium and turns this corner. There is a problem that the portion Y is damaged and fragments are scattered on the magnetic recording medium. Therefore, chamfering (yarn chamfering, chamfering) for obtaining the corner Y is required. This chamfering (yarn chamfering, cornering) is generally performed by machining. For example, as shown in FIG. 15A, the slider 58 is bonded to the mounting surface of the holder 81 with an adhesive such as rosin-based wax. The corners around the ABS (grinding surface) of the slider 58 attached to the holder 81 are pressed against the rotating grindstone 80 to mechanically grind the corners around the ABS (grinding surface) (thread chamfering, chamfering). ).

Also, as shown in FIG.
A number of sliders 58 are arranged and fixed on the sliders 0, and a wrapping tape 91 is arranged on the ABS of each of the sliders 58. Next, an elastic body 92 made of a hard rubber or the like is pressed on the wrapping tape 91, and the wrapping tape 9 is pressed.
1 is squeezed to the ABS of each slider 58,
The corners around the (grinding surface) are mechanically polished (chamfered, chamfered).

However, when chamfering (yarn chamfering, chamfering) is performed by a rotary grindstone 80 as shown in FIG. 15A, chipping occurs at the corners or yarn surface around the ABS, and this chipping is magnetic. This causes a problem that the contact surface of the magnetic recording medium is damaged by contact with the recording medium, or fragments are scattered on the magnetic recording medium. In addition, since each slider is chamfered (chamfered, chamfered), there is a problem that efficiency is low and productivity is low.

When squeezing is performed with the wrapping tape 91 as shown in FIG. 15B, squeezing can be performed continuously, so that the efficiency is high and the productivity is high, but at the same time, the ABS (ground surface) is slightly polished. A problem arises in that the rail pattern is deformed and the flying characteristics vary. In view of the above, the present invention has been made in view of the above-described problems, and has been made to be able to simultaneously perform chamfering of a corner portion around an ABS (ground surface) and a yarn surface portion in a plasma etching step without performing mechanical processing. Is to do.

[0014]

SUMMARY OF THE INVENTION The present invention relates to an air outflow end of a slider having a flying surface formed by forming a rail pattern of a predetermined shape on a surface facing a magnetic recording medium by a plasma etching process. A method of manufacturing a thin-film magnetic head slider having a thin-film magnetic head element on the side thereof, in order to solve the above-mentioned problems, the plasma etching step of the present invention comprises the steps of: A grinding step of irradiating an ion beam with a rail to grind a rail pattern forming surface by a predetermined engraving amount and grinding a corner portion and a thread surface portion of the slider by a predetermined angle, and A removing step of irradiating an ion beam at a second angle to remove residual deposits ground by the grinding step;
A cleaning step of irradiating an ion beam at a third angle to the rail pattern forming surface of the slider to clean the entire surface of the rail pattern forming surface.

As described above, the surface on which the rail pattern of the slider is formed is irradiated with the ion beam at the first angle in the grinding step to grind the formation surface by a predetermined amount, and the peripheral corners of the slider and When the yarn face is ground by a predetermined angle, a predetermined rail pattern is formed, and at the same time, the corners around the slider and the yarn face are ground. For this reason, it is possible to prevent the corners of the slider from contacting the magnetic recording medium, and it is also possible to prevent the contact surface of the magnetic recording medium from being damaged or the fragments from being scattered on the magnetic recording medium. . Further, since no deformation occurs in the rail pattern of each slider, there is no problem that the flying characteristics vary, and this kind of slider can be manufactured efficiently.

Further, when the ion beam is radiated at the second angle to remove the residue adhering in the grinding step, the plasma etching step can be easily performed without providing a new residue removing step. The slider can be efficiently manufactured. Further, when the entire surface of the formed surface is cleaned by irradiating the ion beam at the third angle, the ground surface can be easily cleaned in the plasma etching process without providing a new cleaning process. Thus, this kind of slider can be manufactured efficiently.

When the first angle is set to an angle of 5 to 20 degrees with respect to the surface on which the rail pattern is formed, the grinding amount of the corners and the thread surface around the slider becomes maximum.
The amount of engraving on the rail pattern forming surface and the corners and thread surface around the slider can be optimally ground. In addition, the second angle is set to 75
When the angle is set to an angle of about 85 degrees, the amount of the re-adhered substance is greatly reduced. Further, when the third angle is set to an angle of 30 to 60 degrees with respect to the rail pattern forming surface, the amount of engraving, the amount of grinding at the corners around the slider, the yarn surface, and the amount of adhered grinding material are minimized. The residue remaining even after grinding at the second angle can be almost completely removed, and the entire grinding surface can be cleaned.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for manufacturing a thin-film magnetic head according to the present invention will be described below with reference to FIGS. FIG. 1 is a view showing a series of steps from a step of forming a thin-film magnetic head element to a wafer cutting step and a groove cutting step, and FIG. 2 is an enlarged view of a portion A in FIG. 1 (d). 3 is a view showing a photolithography step, FIG. 4 is a view showing a plasma etching step, and FIG. 5 is a view showing a slider manufacturing step.

1. Raw cutting step As shown in FIG. 1 (a), Altic (Al ₂ O ₃ —Ti
C) and the like on a surface of a ceramic substrate 10 made of a plurality of thin-film magnetic head elements 11, 11.
··· Thin film magnetic head element layer (mainly composed of alumina (Al ₂ O ₃ ))
2 (see FIG. 2) to form a magnetic head wafer 10a. As shown in FIG. 2, the thin-film magnetic head element 11 includes a thin-film magnetic head element 11a and pads (terminal portions) 11b. Then, as shown in FIG. 1 (b), a cutting blade (not shown) is set so that the thin-film magnetic head elements 11, 11... Formed on the magnetic head wafer 10a become one element row (row). By rotating and cutting, the rows 15, 15,... Are formed.

Next, each row 15 is sandwiched between the upper and lower bases of a lapping machine (not shown) so that the ABS (Air Bearing Surface) and the back face are in the vertical direction with respect to the base. Abrasive grains are put in between, and the ABS and the back surface of each row 15 are double-sided lapping by pressing and sliding between the platens. By this double-sided lapping process, a row 15 having high parallelism and less warpage can be obtained. Further, compressive stress generated by the double-sided lapping process remains in each ABS of the row 15 and an extremely thin layer (for example, 3 μm) on the back surface. In this double-sided lapping process, for example, diamond abrasive grains of 0.5 μm or green silicon carbide abrasive grains of 1.5 μm can be used as abrasive grains.

After the row 15 subjected to the double-side lapping treatment is bonded to a work holder (jig) (not shown) with an adhesive such as rosin-based wax such that the back surface is an adhesive surface (ie, ABS is the lower surface). A of the bonded row 15
The work holder is placed on the lapping machine with the BS facing down. The lapping machine is rotated while spraying abrasive grains of 0.5 μm or the like on the lapping machine to polish the ABS of the row 15 (lapping).
Then, the throat height (the length of the pole portion of the thin-film magnetic head element 11a) is processed to a target value.

Next, after removing the row 15 from the work holder (jig), the ABS of the row 15 is bonded to the work holder (jig) such that the ABS of the row 15 becomes an adhesive surface (ie, the back surface is a lower surface). Then, the back surface is polished (lapping) in the same manner as the ABS polishing (lapping) described above. After lapping the ABS in this manner, by lapping the back surface, a row 15 in which the residual stresses of the ABS and the back surface are substantially balanced can be obtained.

Next, as shown in FIG. 1 (c), each row 15 is placed at a predetermined interval (the latter slider) so that the cut surface is the upper and lower surfaces, that is, the film surface 12 is the side surface. 5 times or more of the amount of peripheral chamfering, for example, 25 μm
Above) and bonded on the substrate 20 with an adhesive such as rosin-based wax,
As shown in FIG. 1D, the magnetic head wafer 10
A grooving process is performed for each thin-film magnetic head element 11 formed in a, that is, for each slider to be cut in a later step. By this grooving, grooves 16 are formed on the surface of each row 15 as shown in FIG.

2. Photolithography Step Next, as shown in FIG.
The grooves 16 formed by the groove cutting process of 15, 15,...
There is a resist film for milling on the forming surface (ABS)
Or a photosensitive resin film 30 such as a dry film is stuck.
You. The photosensitive resin film 30 is exposed to ultraviolet rays.
Developer (for example, sodium carbonate (Na _TwoCO_Three) Water soluble
Liquid), it is difficult to dissolve even when immersed in
Has been established. The photosensitive resin must be exposed to ultraviolet rays.
Positive-type photosensitivity that is easily dissolved when immersed in a developer
A resin may be used.

Next, ABS (Air Bearing Surface)
Each row 15, 15 with a photosensitive resin film 30 stuck thereon
A photomask on which a predetermined rail-shaped pattern (not shown) is formed is placed on the ABS, and ultraviolet rays are irradiated onto the photomask from an ultraviolet lamp (not shown) arranged above the photomask. When ultraviolet rays are irradiated on the photomask, the ultraviolet rays passing through the photomask on which the predetermined rail-shaped pattern is formed expose the photosensitive resin film 30 to the predetermined rail-shaped pattern. The portion of the photosensitive resin film 30 exposed to the ultraviolet rays is cured, and a developing solution (for example, sodium carbonate (Na ₂ C
O ₃ ) aqueous solution).

Then, each row 15, 15,... Of which the photosensitive resin film 30 is exposed in a predetermined rail-shaped pattern is developed with a developing solution (for example, an aqueous solution of sodium carbonate (Na ₂ CO ₃ )).
, The photosensitive resin film 30 other than the exposed portion of the photosensitive resin film 30 is dissolved in a developing solution (for example, an aqueous solution of sodium carbonate (Na ₂ CO ₃ )) and removed. Thus, a mask pattern 30a having a predetermined rail shape is formed on the ABS of each row 15, 15,... As shown in FIG. 3B.

3. Plasma etching process Then, as shown in FIG. 4, each row 15, 15... On which a predetermined rail-shaped mask pattern 30a is formed is placed on a rotating plate 42 attached to a rotating shaft 41 of a plasma etching apparatus 40. Mounting, plasma ion gun 43
Plasma etching (ion milling) is performed by further irradiating argon ions Ar ⁺ . Plasma ion gun 43
When the argon ions Ar ⁺ are further irradiated, the argon ions Ar ⁺ are supplied through a shower head or a grid 45 provided in front of the plasma ion gun 43 and are directed substantially in the X-axis direction. On the other hand, the rotating plate 42 is X
It is arranged to be inclined by θ with respect to the axis. When the angle between the X axis and the rotating plate 42 is an irradiation angle (θ),
The argon ions Ar ⁺ are irradiated while being inclined by the irradiation angle (θ). The plasma etching apparatus 40 is provided with a connection pipe 44 connected to a vacuum pump (not shown) to evacuate the inside of the apparatus.

The plasma etching (ion milling) is performed as follows. First, a vacuum pump (not shown) is driven to suck air remaining in the plasma etching apparatus 40 from the connection pipe 44 to evacuate the plasma etching apparatus 40. Then, the irradiation angle of the argon ion Ar ⁺ is set to 5 to 20 degrees, that is, the angle θ of the rotating shaft 41 is set to 5 to 20 degrees, and the plasma ion gun is rotated while rotating the rotating plate 42. 43 irradiates argon ions Ar ⁺ .

The irradiation angle is 5 to 20 degrees,
By irradiating the BS with argon ions Ar ⁺ , A
A other than the portion where the BS mask pattern 30a is formed
The portion of the BS is etched in a groove shape to form a rail pattern with a predetermined engraving amount in a predetermined rail shape, and the ABS of each slider when cut for each slider.
The side corners and the yarn surface are chamfered by a predetermined chamfer amount (this chamfer amount is referred to as a blend amount).

FIG. 7 is a graph showing the relationship between the irradiation angle (θ) of argon ions Ar ⁺ and the amount of chamfering. The reason for grinding the ABS with the irradiation angle of 5 to 20 degrees will be described with reference to FIG. I do. The blend amount is defined as follows. That is, as shown in FIG. 6 (FIG. 6 shows a completed slider), the length b _{1 in} the width direction (X direction and Y direction) and the length in the thickness direction (Z direction) of the ABS surface of the slider. the larger b ₂ represents the amount of blending. 7 indicate the case where the engraving depth is 3 μm, indicate the case where the engraving depth is 6 μm, and indicate b ₁ when the irradiation angle (θ) is 0 to 45 degrees. , Irradiation angle (θ)
If is 46-90 degrees indicates a b _2.

As is clear from FIG. 7, when the irradiation angle (θ) of the argon ions Ar ⁺ is 0 to 20 degrees, the amount of blending is large, but when the irradiation angle exceeds 20 degrees, the amount of blending sharply decreases. Further, as is apparent from FIG. 9 described later, the reattachment amount is significantly increased from 0 to 5 degrees, and when the angle is 5 to 20 degrees, the blend amount is large and the reattachment amount is small. Therefore, it is preferable that the irradiation angle for grinding the ABS is 5 to 20 degrees.

Then, argon ions Ar⁺Irradiation angle
Is set to 75 to 85 degrees, that is,
The rotating plate 42 is set so that the angle θ is 75 to 85 degrees.
While rotating, apply argon from plasma ion gun 43
Ion Ar⁺Irradiates the ABS of row 15. Irradiation angle
To 75 to 85 degrees and argon ions Ar⁺Irradiate
As a result, the re-adhered substance (ABS
Argon ion Ar ⁺Scattered when irradiated)
Will be removed.

FIG. 8 is a diagram showing the relationship between the irradiation angle of argon ions Ar ^{+ and} the rate of reduction of the reattached substance.
The reason why the irradiation angle is set to 75 to 85 degrees to remove the substance reattached to the ABS based on the above will be described. In addition,
8 shows the case where the depth is 3 μm.

As is clear from FIG. 8, when the irradiation angle of the argon ions Ar ⁺ is 75 degrees or more, the rate of reduction of the redeposited substance is large. However, when the irradiation angle is smaller than 75 degrees, the rate of reduction of the redeposited substance rapidly increases. Become smaller. In addition, FIG.
As is more apparent, when the irradiation angle of the argon ion Ar ⁺ is larger than 85 degrees, the re-adhesion amount sharply increases. Therefore, in order to remove the substance re-adhered to the ABS, the irradiation angle of the argon ion Ar ⁺ is set to 75 to 85.
It is preferable to set the temperature.

Then, the irradiation angle of the argon ion Ar ⁺ is set to 30 to 60 degrees, that is, the angle θ of the rotating shaft 41 is set to 30 to 60 degrees, and the rotating plate 42 is rotated. The ABS of the row 15 is irradiated with argon ions Ar ⁺ from the plasma ion gun 43. By irradiating argon ions Ar ⁺ at an irradiation angle of 30 to 60 degrees, the redeposits slightly remaining on the entire surface of the ABS can be removed in a short time.

FIG. 9 is a diagram showing the relationship between the irradiation angle of argon ions Ar ^{+ and} the thickness of the deposited redeposited substance.
Based on the above, the reason why the irradiation angle is set to 30 to 60 degrees to remove the redeposited substance slightly remaining on the entire surface of the ABS will be described. In FIG. 9, the mark “〇” indicates the case where the depth is 3 μm, and the mark “■” indicates the case where the depth is 6 μm.

As is clear from FIG. 9, when the irradiation angle of the argon ion Ar ⁺ is set to 30 to 60 degrees, the reattachment substance hardly adheres. Therefore, AB
In order to remove the redeposited substance slightly remaining on the entire surface of S, it is preferable to set the irradiation angle of argon ions Ar ⁺ to 30 to 60 degrees.

EXAMPLE Here, a specific example of the above-described plasma etching step will be described. First, the irradiation angle of the argon ion Ar ⁺ is set to 20 degrees, that is, the rotation axis 41
The angle θ was set to 20 degrees while the rotating plate 42 was rotated, and the argon ions Ar ⁺ were irradiated from the plasma ion gun 43 onto the ABS of the row 15 for 190 minutes. At this time, the substrate (AlTiC _{(Al 2 O 3 -TiC))} 10
Was 2.5 μm. The thickness of the substance re-adhering to the step between the portion where the mask pattern 30a was formed and the surface of the substrate 10 was 0.3 μm. Further, the blend amount (b _{1 in} FIG. 6)
Of the substrate (altic (Al ₂ O ₃ −
TiC)) was 2.3 μm, and that of the film surface (alumina (Al ₂ O ₃ )) 12 was 3.5 μm.

The irradiation conditions of the argon ions Ar ⁺ were as follows: the degree of vacuum was 2 × 10 ⁻⁴ (Torr), the acceleration voltage was 600 V, the deceleration voltage was −200 V, and the beam current was 1600 mA (0.6 mA / 0.6 mA). cm ² ) and the arc voltage was 70 V.

Then, argon ions Ar⁺Irradiation angle
Is set to 75 degrees, that is, the angle θ of the rotation shaft 41
Is set to 75 degrees, and the rotating plate 42 is rotated.
From the plasma ion gun 43⁺
Was irradiated to the ABS of Row 15 for 30 minutes. Then, trout
Where the mask pattern 30a is formed and the surface of the substrate 10
All the re-adhered substances adhered to the step part of the
Re-adhesion with a maximum thickness of 0.1μm on the excavated surface of
Observed. The blend amount at this time (b in FIG. 6) ₁Head of
Is measured, the substrate (Altic (Al_TwoO_Three−Ti
C)) is 2.4 μm and the film surface (alumina (A
l_TwoO_Three)) 12 was 3.7 μm.

Then, argon ions Ar⁺Irradiation angle
Is set to 45 degrees, that is, the angle θ of the rotation shaft 41
To 45 degrees, while rotating the rotating plate 42.
From the plasma ion gun 43⁺
Was irradiated on the ABS of row 15 for 5 minutes.
0.1μm at the maximum thickness re-attached in stripes
All redeposited material was removed. Therefore, the final group
Plate (Altic (Al _TwoO_Three-TiC)) Drilling amount of 10
Is 2.5 μm, and the blend amount (b in FIG. 6)₁Length)
Is the substrate (Altic (Al_TwoO_Three-TiC)) 10
2.4 μm, and the film surface (alumina (Al_TwoO_Three)) 12
In this case, it was 3.7 μm.

4. Slider fabrication process After a rail pattern having a predetermined rail shape is formed on the ABS by plasma etching, each row 15, 15,.
Is washed with a washing liquid (for example, made of N-methyl-2-pyrrolidone) to remove the mask pattern 30a, that is, the photosensitive resin film 30, and as shown in FIG. A row 15a having a rail pattern 17 having a shape is obtained.

When the photosensitive resin film 30 is removed and the element row a in which the rail pattern 17 having a predetermined rail shape is formed on the ABS is cut for each thin film magnetic head element, FIG.
A rail pattern 17 as shown in FIG. 6 is formed, and a slider 18 whose periphery is chamfered (chamfered, squared) is obtained. In FIG. 6,
Grooves 16 formed on both sides of the ABS of slider 18
“a” indicates the groove 16 formed by the above-described groove cutting.

As described above, in the present invention, in the grinding step in the plasma etching step, the argon ion Ar ⁺ is irradiated at the first angle (5 to 20 degrees) with respect to the surface on which the rail pattern 17 of the slider 18 is formed. Then, the surface on which the rail pattern 17 is formed is ground by a predetermined dug amount, and the corners and the thread surface of the slider 18 are ground by a predetermined angle. The portion and the yarn surface are ground. For this reason, it is possible to prevent the corners of the slider from contacting the magnetic recording medium, and it is also possible to prevent the contact surface of the magnetic recording medium from being damaged or the fragments from being scattered on the magnetic recording medium. . Also, since there is no deformation of the rail pattern of each slider,
There is no problem that the flying characteristics vary, and this kind of slider can be manufactured efficiently.

In addition, since argon ions Ar ⁺ are irradiated at the second angle (75 to 85 degrees) to remove the deposits of the residue ground in the grinding step, the residue is newly removed. The slider can be easily removed in the plasma etching step without providing a step, and this kind of slider can be manufactured efficiently. Further, at a third angle (30 to 60 degrees), argon ions Ar
^Since the entire surface on which the rail pattern 17 is formed is cleaned by irradiating ⁺ , the ground surface can be easily cleaned in the plasma etching process without providing a new cleaning process, and the efficiency is improved. This type of slider can be manufactured well.

[Brief description of the drawings]

FIG. 1 is a view showing a series of steps from a step of forming a thin-film magnetic head element to a step of cutting a wafer and a step of cutting a groove.

FIG. 2 is an enlarged view of a portion A in FIG. 1 (c).

FIG. 3 is a view showing a photolithography step.

FIG. 4 is a view showing a plasma etching step.

FIG. 5 is a diagram showing a slider manufacturing process.

FIG. 6 is a view showing a slider manufacturing process.

FIG. 7 is a diagram showing the relationship between the irradiation angle of argon ions and the amount of chamfering.

FIG. 8 is a diagram showing the relationship between the irradiation angle of argon ions and the rate of reduction of the reattached substance.

FIG. 9 is a diagram showing the relationship between the irradiation angle of argon ions and the thickness of the deposited redeposited substance.

FIG. 10 is a view showing a conventional low-slicing process.

FIG. 11 is a view showing a conventional photolithography step.

FIG. 12 is a view showing a conventional plasma etching step.

FIG. 13 is a view showing a conventional process of cutting a row after plasma etching to form a slider.

FIG. 14 is a diagram showing a low state before and during a conventional plasma etching.

FIG. 15 is a view showing a state in which a peripheral corner portion and a thread surface portion of a conventional ABS are mechanically polished.

[Explanation of symbols]

10a: magnetic head wafer, 10: ceramic substrate,
11a: thin-film magnetic head element, 11b: pad (terminal part), 12: thin-film magnetic head element layer (film surface), 15: element row (row), 16: groove, 16a: groove part, 17: rail pattern, 18 ... Thin film magnetic head slider, 20: substrate, 30: photosensitive resin film, 40: plasma etching device, 41: rotating shaft, 42: rotating plate, 43: plasma ion gun

Claims (3)

[Claims] 1. A thin-film magnetic head slider having a thin-film magnetic head element on an air outflow end side of a slider having a flying surface formed by forming a rail pattern of a predetermined shape on a surface side facing a magnetic recording medium by a plasma etching process. The plasma etching step comprises: irradiating an ion beam at a first angle with respect to a rail pattern forming surface of the slider to grind the rail pattern forming surface by a predetermined engraving amount. A grinding step of grinding a corner portion and a yarn surface portion around the slider by a predetermined angle; and irradiating an ion beam at a second angle with respect to a surface of the slider on which a rail pattern is formed to be ground by the grinding step. A removing step of removing adhering substances remaining, and irradiating an ion beam at a third angle with respect to a surface of the slider on which a rail pattern is formed. Method of manufacturing a thin film magnetic head slider, characterized in that a cleaning step of cleaning the entire surface of the forming surface of the rail pattern Te. 2. The first angle is an angle of 5 to 20 degrees with respect to a surface on which the rail pattern is formed, and the second angle is an angle of 75 to 85 degrees with respect to a surface on which the rail pattern is formed. The method according to claim 1, wherein the third angle is an angle of 30 to 60 degrees with respect to a surface on which the rail pattern is formed. 3. A cutting step in which, before the plasma etching step, a wafer in which a large number of the thin-film magnetic head elements are formed in a vertical direction and a horizontal direction on a surface thereof is cut into element rows for each row; A grinding / polishing step of grinding / polishing a cut surface of each of the cut element rows by a predetermined amount; and a grooving step of grooving for each slider with the ground / polished surface of each element row ground and polished in the grinding / polishing step as an upper surface. And on the substrate adjacent to each other at a predetermined interval so that the ground and polished surface of each element row cut in the groove cutting step is the upper surface and the formation surface of the thin-film magnetic head element is a side surface. An arranging step of arranging, a photosensitive resin film is applied to a surface of each of the arranged element rows, and a photomask is arranged on the photosensitive resin film. A photolithography step of forming a mask pattern of a predetermined shape on a surface; and a cleaning step of cleaning the element row with a cleaning liquid to remove the photomask after the plasma etching step; 3. A method for manufacturing a thin-film magnetic head slider according to claim 1, further comprising: a cutting step of cutting each of the element rows from which the elements have been removed into individual sliders.