JP3052945B2 - Method of manufacturing thin film magnetic head slider - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film magnetic head used in a magnetic disk drive and the like, and more particularly to a slider having a flying surface formed by forming a rail pattern of a predetermined shape on a surface facing a magnetic recording medium. The present invention relates to a method for manufacturing a thin-film magnetic head slider having a thin-film magnetic head element on the air outflow end side.

[0002]

2. Description of the Related Art A thin film magnetic head has a thin film magnetic head element formed on a rear end surface of a ceramic block called a slider, and a surface of the slider facing a magnetic recording medium, that is, an air bearing surface. Surfac
e: hereinafter referred to as ABS), a rail pattern of a predetermined shape is formed. For this reason, when the magnetic recording medium (media) rotates, the slider is given a lifting force by the high-speed airflow flowing from the tapered portion at the front end of the rail, and a gap of about 0.1 μm from the surface of the magnetic recording medium. So that the tip of the head does not directly contact the magnetic recording medium. Such a thin film magnetic head is generally called a floating magnetic head.

The ABS of the slider of such a floating magnetic head has a complicated rail pattern formed in order to keep the flying height constant. Usually, this type of slider, to form a number of thin-film magnetic head element on a ceramic substrate made of AlTiC (Al ₂ O ₃ -TiC), followed by cutting the substrate by rod-like element array (hereinafter, low After performing a predetermined polishing process, the row is processed to obtain a slider in which a rail pattern of a predetermined shape is formed on the ABS.

FIGS. 11 to 14 are views showing an example of the above-described slider manufacturing process. Each of the slider manufacturing steps will be described in detail with reference to FIGS. 11 to 14. FIG. FIG. 11 is a diagram showing a low-slicing process, FIG. 12 is a diagram showing a photolithography process, and FIG.
FIG. 14 is a view showing a plasma etching step, and FIG. 14 is a view showing a step of cutting a row after plasma etching to form a slider.

[0005] As shown in FIG. 11 (a), a ceramic substrate 50 made of AlTiC (Al ₂ O ₃ —TiC) or the like is used.
A plurality of thin film magnetic head elements 51, 51,... Are formed in the vertical and horizontal directions on the surface of the magnetic head wafer 50a by a wafer process. Next, FIG.
As shown in FIG. 1 (b), the magnetic head wafer 50a
Are cut into bar-shaped rows 55, 55,. Thereafter, the cut surface is polished to process a predetermined throat height (the length of the pole portion of the thin-film magnetic head element) to a target value, and the remaining stress due to the throat height processing is removed by polishing. Thereafter, as shown in FIG. 11C, the rows 55, 55... Are arranged on the substrate 60 at predetermined intervals so that the cut surface (polished surface) is the upper surface and the lower surface. I do.

Next, as shown in FIG. 12A, a photosensitive resin film 70 such as a resist or a dry film is adhered on the cut surface of each row 55, 55... . Thereafter, a photomask having a rail pattern of a predetermined shape formed thereon is disposed thereon, and light beams such as ultraviolet rays are irradiated on the photomask to expose the photosensitive resin film 70. Next, each row 55 in which the photosensitive resin film 70 is exposed to a predetermined rail-shaped mask pattern is immersed in a developing solution, and the photosensitive resin film 55 other than the exposed portion is dissolved in the developing solution and removed. . Then, FIG.
As shown in (b), each row 55 in which predetermined mask patterns 70a, 70a... Are formed on the cut surface is obtained.

[0007] Then, as shown in FIG.
.. Are formed.
Each row 55 is rotated by the rotation axis 8 of the plasma etching apparatus 80.
1 on the rotating plate 82 attached to the
Argon ion Ar from ion gun 83⁺Irradiation (irradiation
Angle θ = 30 to 60 degrees) and perform plasma etching (Io
Milling). Al from plasma ion gun 83
Gon ion Ar⁺Is irradiated, argon ions Ar
⁺Is a shower provided in front of the plasma ion gun 83.
-Supplied through the head or grid 85,
It faces the X-axis direction. On the other hand, the rotating plate 82 is
Are inclined by θ. This X axis and rotating plate
Assuming that the angle made with 82 is the irradiation angle (θ), argon
Ion Ar ⁺Is irradiated at an angle of irradiation (θ).

The plasma etching apparatus 80 is provided with a connection pipe 84 connected to a vacuum pump (not shown) for evacuating the inside of the apparatus. By this ion milling, the cut surfaces other than the portions where the mask patterns 70a, 70a... Are formed are etched into grooves, and the portions where the mask patterns 70a, 70a. 55. This low 55
Are cleaned with a cleaning liquid to form mask patterns 70a, 70a,.
After the removal, the row 55a in which the ABS provided with the rail pattern 57 of a predetermined shape is formed is obtained as shown in FIG. When the row 55a is cut for each thin-film magnetic head element, a slider 58 on which a rail pattern 57 is formed as shown in FIG. 14B is obtained.

[0009]

When the plasma etching is performed as described above, FIG. 15B (FIG. 1)
5 (a) is a view showing the state of the row before the plasma etching processing, and FIG. 15 (b) is a view showing the state of the row during the plasma etching processing. Argon ion Ar on 71 side
^The substance X scattered by the ⁺ irradiation is attached again. In order to prevent such reattachment, the ion milling angle (irradiation angle θ of argon ions Ar ⁺ ) is set to 30 to 60 degrees. However, when ion milling is performed at this angle, as shown in FIG. 15B, a corner Y around the ABS is formed.
The corner Z of the mask pattern 70a is held at a right angle.

When the corner Y around the ABS is held at a right angle, the corner Y comes into contact with the magnetic recording medium and damages the contact surface of the magnetic recording medium, or comes into contact with the magnetic recording medium and turns this corner. There is a problem that the portion Y is damaged and fragments are scattered on the magnetic recording medium. Therefore, chamfering (yarn chamfering, chamfering) for obtaining the corner Y is required. This chamfering (yarn chamfering, cornering) is generally performed by machining. For example, as shown in FIG. 16A, the slider 58 is bonded to the mounting surface of the holder 81 with an adhesive such as rosin-based wax. The corners around the ABS (grinding surface) of the slider 58 attached to the holder 81 are pressed against the rotating grindstone 80 to mechanically grind the corners around the ABS (grinding surface) (thread chamfering, chamfering). ).

Also, as shown in FIG.
A number of sliders 58 are arranged and fixed on the sliders 0, and a wrapping tape 91 is arranged on the ABS of each of the sliders 58. Next, an elastic body 92 made of a hard rubber or the like is pressed on the wrapping tape 91, and the wrapping tape 9 is pressed.
1 is squeezed to the ABS of each slider 58,
The corners around the (grinding surface) are mechanically polished (chamfered, chamfered).

However, when chamfering (yarn chamfering, chamfering) is performed with a rotary grindstone 80 as shown in FIG. 16A, chipping occurs at the corners or yarn surface around the ABS, and this chipping becomes magnetic. This causes a problem that the contact surface of the magnetic recording medium is damaged by contact with the recording medium, or fragments are scattered on the magnetic recording medium. In addition, since each slider is chamfered (chamfered, chamfered), there is a problem that efficiency is low and productivity is low.

When squeezing is performed with the wrapping tape 91 as shown in FIG. 16B, squeezing can be performed continuously, so that the efficiency and productivity are high, but the ABS (ground surface) is also slightly polished. In addition, there arises a problem that the rail pattern is deformed and the flying characteristics vary. Therefore, the present invention has been made in view of the above-mentioned problems, and performs magnetic recording by performing chamfering of a corner portion and a yarn surface portion around an ABS (ground surface) by plasma etching without performing mechanical processing. An object of the present invention is to provide a slider that does not damage the medium.

[0014]

SUMMARY OF THE INVENTION The present invention is directed to a thin-film magnetic head formed on a surface facing a magnetic recording medium by forming a rail pattern of a predetermined shape on a side of an air outflow end of a slider. A method of manufacturing a thin-film magnetic head slider having a head element, in order to solve the above problems, a method of manufacturing a thin-film magnetic head slider according to the present invention comprises: A photosensitive resin film is attached to a cut surface of a row formed by cutting a large number of formed wafers into element rows (rows) for each row, and a photomask is arranged on the photosensitive resin film. A photolithography step of developing a mask pattern of a predetermined shape on the cut surface of the row, and irradiating an ion beam at a predetermined angle to the mask pattern formation surface to form a mask pattern. Plasma etching step of forming a rail pattern of each slider by grinding a surface on which a rail is formed by a predetermined engraving amount, and partitioning a row for each slider on the surface where the rail pattern is formed by the first plasma etching step. And a second plasma etching step of chamfering by plasma etching a thread surface and a corner of each of the sliders having a groove formed in the groove forming step. A slider cutting step of cutting each slider along the groove of the element row chamfered in the plasma etching step.

As described above, after the grooves for partitioning the respective sliders are formed in the formation surface of the row rail pattern formed in the first plasma etching process by the grooving process, the periphery of each slider is formed in the chamfering process. After performing the chamfering process by plasma etching on the thread surface portion and the corner portion of the portion, the slider is cut for each slider, and the thread surface portion and the corner portion of the peripheral portion of each slider are chamfered. For this reason, since the thread surface portion and the corner portion of each slider are rounded, the corner portion of the slider can be prevented from contacting the magnetic recording medium, and the contact surface of the magnetic recording medium (media) can be prevented. And the fragments can be prevented from scattering on the magnetic recording medium.

Prior to the chamfering step, a photosensitive resin film is adhered to the surface of the row in which the grooves are formed by the grooving step, and a photomask is arranged on the photosensitive resin film. By providing a second photolithography step of developing and forming a mask pattern on a surface other than the peripheral portion of the low slider, the second plasma etching step makes it easy to chamfer the thread surface portion and the corner portion of the peripheral portion of the slider. Processing can be performed.

In the first plasma etching step, an ion beam is irradiated at an irradiation angle of 30 to 60 degrees on a mask pattern forming surface (row surface).
The ground surface of the rail pattern is ground at right angles to the surface of the row. However, when the chamfering step includes a grinding step of irradiating an ion beam at a first angle with respect to a surface on which a rail pattern of the slider is formed to grind a thread surface portion and a corner portion of the slider by a predetermined angle, Is ground by a predetermined angle, and the yarn surface and the corners are chamfered to form roundness. For this reason, it is possible to prevent the corners of the slider from contacting the magnetic recording medium, and to prevent the contact surface of the magnetic recording medium (media) from being damaged or to prevent fragments from scattering on the magnetic recording medium. become.

A removing step of irradiating an ion beam at a second angle with respect to a surface on which a rail pattern of the slider is formed to remove residual substances adhered by the grinding step; and forming a rail pattern of the slider. A cleaning step of irradiating the surface with an ion beam at a third angle to clean the yarn surface and the corners, it is easy to perform plasma etching without newly providing a residue removing step and a cleaning step. This makes it possible to easily remove this type of slider without adding new processes and manufacturing equipment.

Further, when the first angle is set to an angle of 5 to 20 degrees with respect to the surface on which the rail pattern is formed, the grinding amount of the corner portion and the thread surface portion of the peripheral portion of the slider is maximized. The peripheral corners and the yarn surface can be optimally ground. In addition, when the second angle is set to an angle of 75 to 85 degrees with respect to the rail pattern forming surface, the amount of the re-adhesion substance is large, so that the residue adhering in the grinding process can be removed in a short time. Becomes Also, the third
When the angle is 30 to 60 degrees with respect to the surface on which the rail pattern is formed, the grinding amount at the corners around the slider, the thread surface, and the amount of the grinding substance adhered are minimized. However, the remaining residue can be almost completely removed, and the entire grinding surface can be cleaned.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for manufacturing a thin-film magnetic head according to the present invention will be described below with reference to FIGS. FIG. 1 is a view showing a series of steps from a step of forming a thin-film magnetic head element to a step of cutting a wafer.
FIG. 2 is a view showing a photolithography process, and FIG.
FIG. 4 is a view showing a plasma etching step, FIG. 4 is a view showing an element row on which a rail pattern is formed by the plasma etching step, and FIG. 5 is a view showing a step of grooving the element row for each slider. It is. FIG. 6 is a diagram showing a state in which a protective film is formed by a second photolithography process on the element row after the grooving process, and FIG. 7 shows the relationship between the irradiation angle of argon ions Ar ⁺ and the amount of chamfering. FIG. 8 is a diagram showing the relationship between the irradiation angle of argon ions Ar ⁺ and the reduction rate of the reattached substance, and FIG.
FIG. 10 is a diagram showing the relationship between the irradiation angle of argon ions Ar ^{+ and} the thickness of the deposited redeposited substance. FIG. 10 shows a state in which the thread surface and the corners of the periphery of the slider are chamfered and then cut for each slider. FIG.

1. Raw cutting step As shown in FIG. 1 (a), Altic (Al ₂ O ₃ —Ti
C) and the like on a surface of a ceramic substrate 10 made of a plurality of thin-film magnetic head elements 11, 11.
··· Thin film magnetic head element layer (mainly composed of alumina (Al ₂ O ₃ ))
2 (see FIG. 4) to form a magnetic head wafer 10a. As shown in FIG. 4, the thin-film magnetic head element 11 includes a thin-film magnetic head element 11a and pads (terminal portions) 11b. Then, as shown in FIG. 1B, the cutting blade (not shown) is rotated by rotating the thin film magnetic head elements 11, 11... Formed on the magnetic head wafer 10a into one element row. Are cut to form rows 15, 15...

Next, each row 15 is sandwiched between the upper and lower bases of a lapping machine (not shown) such that the ABS and the back face are in the vertical direction with respect to the base. Then, both the ABS and the back surface of each row 15 are double-sided wrapped by pressing and sliding between the platens. By this double-sided lapping process, a row 15 having high parallelism and less warpage can be obtained. Also row 15
The compressive stress generated by the double-sided lapping process remains in each of the ABSs and the extremely thin layer (for example, 3 μm) on the back surface. In this double-sided lapping process, for example, diamond abrasive grains of 0.5 μm or green silicon carbide abrasive grains of 1.5 μm can be used as polishing abrasive grains.

After the row 15 subjected to the double-side lapping process is bonded to a work holder (jig) (not shown) with an adhesive such as rosin-based wax such that the back surface is an adhesive surface (ie, ABS is a lower surface). A of the bonded row 15
The work holder is placed on the lapping machine with the BS facing down. The lapping machine is rotated while spraying abrasive grains of 0.5 μm or the like on the lapping machine to polish the ABS of the row 15 (lapping).
Then, the throat height (the length of the pole portion of the thin-film magnetic head element 11a) is processed to a target value.

Next, after the row 15 is removed from the work holder (jig), the ABS of the row 15 is bonded to the work holder (jig) such that the ABS of the row 15 becomes an adhesive surface (ie, the back surface is a lower surface). Then, the back surface is polished (lapping) in the same manner as the ABS polishing (lapping) described above. After lapping the ABS in this manner, by lapping the back surface, a row 15 in which the residual stresses of the ABS and the back surface are substantially balanced can be obtained. Next, as shown in FIG. 1 (c), each row 1 is cut so that the cut surface is the upper and lower surfaces, that is, the film surface 12 is the side surface.
The substrate 2 is separated by a predetermined distance (e.g., 5 times or more, for example, 25 μm or more, of the amount of chamfering around the slider).
0.

2. First Photolithography Step Next, as shown in FIG. 2A, a photosensitive resin film such as a resist film for milling or a dry film is formed on the cut surface (ABS) of each row 15, 15,. 30 is stuck. The photosensitive resin film 30 is formed of a negative photosensitive resin that is hardly dissolved even when immersed in a developing solution (for example, an aqueous solution of sodium carbonate (Na ₂ CO ₃ )) by being irradiated with ultraviolet rays. As the photosensitive resin, a positive photosensitive resin which is easily melted when immersed in a developer by being irradiated with ultraviolet rays may be used.

Next, a photomask on which a predetermined rail-shaped pattern (not shown) is formed is placed on the ABS of each row 15, 15... With the photosensitive resin film 30 adhered on the ABS. Ultraviolet rays are irradiated onto the photomask from an ultraviolet lamp (not shown) arranged above the photomask. When ultraviolet rays are irradiated on the photomask, the ultraviolet rays passing through the photomask on which the predetermined rail-shaped pattern is formed expose the photosensitive resin film 30 to the predetermined rail-shaped pattern. The portion of the photosensitive resin film 30 exposed to the ultraviolet rays is hardened and hardly melts even when immersed in a developing solution (for example, an aqueous solution of sodium carbonate (Na ₂ CO ₃ )) in a later developing step.

Next, the rows 15, 15,... Of which the photosensitive resin film 30 has been exposed to a predetermined rail-shaped pattern are developed with a developing solution (for example, an aqueous solution of sodium carbonate (Na ₂ CO ₃ )).
, The photosensitive resin film 30 other than the exposed portion of the photosensitive resin film 30 is dissolved in a developing solution (for example, an aqueous solution of sodium carbonate (Na ₂ CO ₃ )) and removed. Thus, a mask pattern 30a having a predetermined rail shape is formed on the ABS of each row 15, 15,... As shown in FIG.

3. First Plasma Etching Step Next, as shown in FIG. 3, each row 15, 15... On which a predetermined rail-shaped mask pattern 30 a is formed is attached to a rotating plate 42 attached to a rotating shaft 41 of the plasma etching apparatus 40. Attached on top, plasma ion gun 43
Plasma etching (ion milling) is performed by further irradiating argon ions Ar ⁺ . Plasma ion gun 43
When the argon ions Ar ⁺ are further irradiated, the argon ions Ar ⁺ are supplied through a shower head or a grid 45 provided in front of the plasma ion gun 43, and are directed substantially in the X-axis direction. On the other hand, the rotating plate 42 is X
It is arranged to be inclined by θ with respect to the axis. When the angle between the X axis and the rotating plate 42 is an irradiation angle (θ),
The argon ions Ar ⁺ are irradiated while being inclined by the irradiation angle (θ). The plasma etching apparatus 40 is provided with a connection pipe 44 connected to a vacuum pump (not shown) to evacuate the inside of the apparatus.

Here, the plasma etching (ion milling) is performed as follows. First, a vacuum pump (not shown) is driven to suck air remaining in the plasma etching apparatus 40 from the connection pipe 44 to evacuate the plasma etching apparatus 40. The degree of vacuum at this time is 2 × 10 ^-4
(Torr), the acceleration voltage is 600 V, the deceleration voltage is -200 V, and the beam current is 1600 mA (0.6
mA / cm ² ) and the arc voltage is 70 V.

Thereafter, the irradiation angle of the argon ion Ar ⁺ is set to 30 to 60 degrees, that is, the angle θ of the rotation axis is set to 30 to 60 degrees, and the rotating plate 42 is rotated. Irradiation with argon ions Ar ⁺ is performed from the plasma ion gun 43. By irradiating the ABS of the row 15 with argon ions Ar ⁺ at an irradiation angle of 30 to 60 degrees, portions of the ABS other than the portion where the ABS mask pattern 30a is formed are etched at right angles in a groove shape. This row 15 is washed with a cleaning solution (for example, n-methyl-2-
Cleaning with a mask pattern 30a
Is removed, a rail pattern 16 having a predetermined rail shape is formed as shown in FIG.

4. Grooving Step Then, a not-illustrated grinding portion is cut on a surface of the row 15 on which the rail pattern 16 having a predetermined rail shape is formed so that each slider is cut in a subsequent step into each slider. The blade is pressed and the grinding blade is rotated to perform grooving instead of cutting margin. By this grooving process, a groove 17 is formed on the surface of the row 15 where the rail pattern 16 is formed, as shown in FIG. Thus, the groove 17 is formed on the surface of the row 15 where the rail pattern 16 is formed.
Is formed, it is possible to prevent the cut portion of the formation surface of the rail pattern 16 from being chipped, even if the slider is cut for each slider in a subsequent cutting step.

5. Second Photolithography Step After forming the grooves 17 on the surface of the row 15 on which the rail pattern 16 is formed, the rows 15 are arranged on a substrate (not shown) at predetermined intervals. Here, the interval between the rows 15 needs to be at least five times the chamfering amount (for example, 25 μm when the chamfering amount is 5 μm). Thereafter, a photosensitive resin film such as a resist film for milling or a dry film is formed on the surface of the row 15 on which the rail pattern 16 is formed (this photosensitive resin film is the same as the photosensitive resin film used in the photolithography process). Affix.

Next, row 1 having a photosensitive resin film adhered thereto
On the surface on which the rail pattern 16 of FIG. 5 is formed, a photomask on which a mask pattern not shown (this mask pattern is formed so as to cover portions other than the periphery of each slider) is placed, and After irradiating the photomask with ultraviolet rays from an ultraviolet lamp (not shown) disposed above the mask, the photomask is immersed in a developing solution (for example, an aqueous solution of sodium carbonate (Na ₂ CO ₃ )). Is dissolved in a developer and removed.

Thus, the rail pattern 1 of the row 15
As shown in FIG. 6A, a mask pattern 18 is formed on the surface on which the slider 6 is formed except for the peripheral portion 16a of each slider. Thus, the rail pattern 1 of row 15
When the mask pattern 18 is formed on the formation surface of FIG.
As shown in (b), except for the peripheral portion 16a of each slider, the surface on which the rail pattern 16 is formed is protected even if it is irradiated with argon ions Ar ⁺ in the subsequent second plasma etching step.

6. Then, after forming a mask pattern 18 on the surface of the row 15 on which the rail pattern 16 is formed, as shown in FIG. 3, each row 15, 15,... Is mounted on a rotating plate 42 attached to a rotating shaft 41 of a plasma etching apparatus 40, and argon ions Ar are supplied from a plasma ion gun 43.
Irradiation with ⁺ is performed to perform plasma etching (second plasma etching). The plasma etching conditions in this case are, as in the first plasma etching step described above, a degree of vacuum of 2 × 10 ^-4 (Torr) and an acceleration voltage of 600.
V, the deceleration voltage is -200 V, and the beam current is 16
00 mA (0.6 mA / cm ² ) and an arc voltage of 7
0V.

This second plasma etching is performed as follows. First, a vacuum pump (not shown) is driven to suck air remaining in the plasma etching apparatus 40 from the connection pipe 44 to evacuate the plasma etching apparatus 40. Thereafter, the irradiation angle of argon ions Ar ⁺ is set to 5 to 2
0 degree, that is, the angle θ of the rotation axis is 5 to 2
While rotating the rotating plate 42 so that it becomes 0 degree,
Irradiation with argon ions Ar ⁺ is performed from the plasma ion gun 43. Low 15 ABS with irradiation angle of 5 to 20 degrees
Is irradiated with argon ions Ar ⁺ , the thread surface and the corners of the peripheral portion 16a of each slider without the mask pattern 18 are ground at an angle of 45 degrees, and a predetermined chamfer amount (this chamfer amount is referred to as a blend amount). ), And FIG. 10 (FIG. 10 shows the completed slider).
As shown in (1), the thread surface portion and the corner portion of the peripheral portion 16a of each slider are formed with round portions.

FIG. 7 is a diagram showing the relationship between the irradiation angle (θ) of argon ions Ar ⁺ and the amount of blending. The reason for chamfering with the irradiation angle of 5 to 20 degrees will be described with reference to FIG. . The blend amount is defined as follows. That is, as shown in FIG. 10, the length b _{1 in} the width direction (X direction and Y direction) of the ABS surface of the slider.
And it represents a better thickness direction (Z direction) of the length b ₂ larger as a blend amount. In FIG. 7, the mark “〇” indicates that the engraving depth is 3
shows the case of a [mu] m, ■ mark indicates the case engraved depth of 6 [mu] m, the irradiation angle (theta) represents b ₁ in the case of 0 to 45 degrees, when the irradiation angle (theta) is 46 to 90 degrees Indicates b ₂ .

As is clear from FIG. 7, when the irradiation angle (θ) of the argon ion Ar ⁺ is 0 to 20 degrees, the blend amount is large, but when the irradiation angle (θ) exceeds 20 degrees, the blend amount sharply decreases. Further, as is apparent from FIG. 9 described later, the reattachment amount is significantly increased from 0 to 5 degrees, and when the angle is 5 to 20 degrees, the blend amount is large and the reattachment amount is small. Therefore, it is preferable that the irradiation angle (θ) of the chamfering of the ABS be 5 to 20 degrees. More preferably, 5 to 15 degrees is desirable. Since the mask pattern 18 is formed on the ABS of each slider, the amount of blending (lengths b ₁ and b ₂ in FIG. 10) can be freely adjusted by adjusting the irradiation time of the argon ions Ar ⁺ . For example, it is preferable to form b ₁ and b ₂ in the range of ₂ to 50 μm.

Next, while rotating the rotating plate 42 so that the irradiation angle of the argon ions Ar ⁺ is 75 to 85 degrees, that is, the angle θ of the rotation axis is 75 to 85 degrees, the plasma is generated. The ABS of the row 15 is irradiated with argon ions Ar ⁺ from the ion gun 43. 7 irradiation angles
By irradiating with argon ions Ar ⁺ at 5 to 85 degrees, the redeposits (substances scattered by irradiating the argon ions Ar ^{+ to the} ABS) attached to the mask step surface are removed.

FIG. 8 is a diagram showing the relationship between the irradiation angle of argon ions Ar ^{+ and} the rate of reduction of the reattached substance.
The reason why the irradiation angle is set to 75 to 85 degrees to remove the substance reattached to the ABS based on the above will be described. In addition,
8 shows the case where the depth is 3 μm. As is clear from FIG. 8, when the irradiation angle of the argon ion Ar ⁺ is 75 degrees or more, the reduction rate of the redeposited substance is large, but when the irradiation angle is smaller than 75 degrees, the reduction rate of the redeposited substance rapidly decreases. As will be apparent from FIG. 9 described later, when the irradiation angle of the argon ions Ar ⁺ is larger than 85 degrees, the amount of redeposition increases sharply. Therefore,
In order to remove the substance re-adhered to the ABS, it is preferable to set the irradiation angle of the argon ion Ar ⁺ to 75 to 85 degrees.

Next, while rotating the rotating plate 42 so that the irradiation angle of the argon ion Ar ⁺ is 30 to 60 degrees, that is, the angle θ of the rotation axis is 30 to 60 degrees, the plasma The ABS of the row 15 is irradiated with argon ions Ar ⁺ from the ion gun 43. 3 irradiation angles
By irradiating argon ions Ar ⁺ at 0 to 60 degrees, the redeposits slightly remaining on the entire surface of the ABS can be removed in a short time.

FIG. 9 is a diagram showing the relationship between the irradiation angle of argon ions Ar ^{+ and} the thickness of the deposited redeposited substance.
Based on the above, the reason why the irradiation angle is set to 30 to 60 degrees to remove the redeposited substance slightly remaining on the entire surface of the ABS will be described. In FIG. 9, the mark “〇” indicates the case where the depth is 3 μm, and the mark “■” indicates the case where the depth is 6 μm. As is apparent from FIG. 9, when the irradiation angle of the argon ion Ar ⁺ is set to 30 to 60 degrees, the re-adhesion substance hardly adheres. Therefore, in order to remove the redeposited substance slightly remaining on the entire surface of the ABS, it is preferable to set the irradiation angle of the argon ion Ar ⁺ to 30 to 60 degrees, optimally 45 degrees.

7. Slider Fabrication Step After chamfering the thread surface and the corners of the peripheral part 15a of each slider of the row 15 by the second plasma etching step, each row 15, 15,... Is washed with a cleaning liquid (for example, n-methyl-2-). After the mask pattern 18 is removed, the ABS is provided with a rail pattern 16 having a predetermined rail shape, and the thread surface and the corner of the peripheral portion 16a of each slider are chamfered to form a rounded portion. The formed row 15 is obtained. When this row 15 is cut for each slider along the groove 17, a rail pattern 16 as shown in FIG. 10 is formed, and the thread surface and the corner of the peripheral portion 16a are chamfered to form a rounded portion. Slider 19 is obtained.

As described above, in the present invention, the first
After forming a groove 17 for partitioning each slider 19 by a grooving step on the surface of the row 15 formed with the rail pattern 16 formed by the plasma etching step, a chamfering step forms a thread surface of a peripheral portion 16a of each slider. When the corners are chamfered by the second plasma etching step and then cut for each slider 19, the thread surface and the corners of the peripheral portion 16a of each slider 19 are chamfered to form a rounded portion. For this reason, it is possible to prevent the corner of the slider 19 from contacting the magnetic recording medium,
It is also possible to prevent the contact surface of the magnetic recording medium (media) from being damaged or to prevent fragments from scattering on the magnetic recording medium.

Prior to the chamfering step, a photosensitive resin film is adhered to the surface of the row 15 in which the groove 17 has been formed by the grooving step, and a photomask is disposed on the photosensitive resin film. If a second photolithography step of forming a mask pattern 18 on the surface of the row 15 other than the peripheral portion 16a of the slider by exposure and development is provided, the yarn at the peripheral portion of the slider 19 can be easily formed by the second plasma etching step. The chamfering of the face and the corner can be performed.

Then, in the first plasma etching step, when argon ions Ar ⁺ are irradiated at an irradiation angle of 30 to 60 degrees on the surface on which the mask pattern 30a is formed,
The ground surface of the rail pattern 30a is ground so as to be perpendicular to the surface of the row 15. However, in the chamfering step, the argon ions A at a first angle with respect to the surface on which the rail pattern 16 of the slider 19 is formed.
By providing a grinding step of irradiating r ⁺ to grind the thread surface and the corner of the peripheral portion 16a of the slider by a predetermined angle, the thread surface and the corner of the slider are ground by a predetermined angle, And rounded part 1 with chamfered corners
6b is formed. Therefore, the slider 19
Can be prevented from contacting the magnetic recording medium, and the contact surface of the magnetic recording medium (media) can be prevented from being damaged, and fragments can also be prevented from scattering on the magnetic recording medium.

The rail pattern 16 of the slider 19
A step of irradiating argon ions Ar ⁺ at a second angle to the surface on which the surface is formed to remove the residual adhering substances ground by the grinding step, and the rail pattern 16 of the slider 19.
And a cleaning step of irradiating argon ions Ar ⁺ at a third angle to the formation surface of the yarn to clean the yarn surface and the corners, without newly providing a residue removing step and a cleaning step. The grinding residual can be easily removed by plasma etching, and this kind of slider 19 can be easily manufactured without adding a new process and a new manufacturing apparatus.

Further, the first angle is set to the rail pattern 16.
When the angle is 5 to 20 degrees with respect to the surface on which the slider is formed, the grinding amount of the corners and the thread surface at the peripheral portion of the slider becomes maximum (see FIG. 7). It will be possible to optimally grind. Further, when the second angle is set to an angle of 75 to 85 degrees with respect to the surface on which the rail pattern 16 is formed, the amount of the re-adhered substance is large (see FIG. 8). It is possible to remove with. Further, when the third angle is set to an angle of 30 to 60 degrees, optimally 45 degrees with respect to the surface on which the rail pattern 16 is formed, the amount of grinding at the corners of the peripheral portion of the slider 19, the thread surface, and the adhesion of the grinding substance Since the amount is minimized (see FIG. 9), the residue remaining after grinding at the second angle can be almost completely removed, and the entire ground surface can be cleaned.

[Brief description of the drawings]

FIG. 1 is a view showing a series of steps from a step of forming a thin-film magnetic head element to a step of cutting a wafer.

FIG. 2 is a view showing a photolithography step.

FIG. 3 is a view showing a plasma etching step.

FIG. 4 is a diagram showing an element row on which a rail pattern is formed by a plasma etching process.

FIG. 5 is a view showing a step of performing a groove forming process on an element row for each slider.

FIG. 6 is a diagram showing a state in which a protective film is formed by a second photolithography process on the element row after the grooving process.

FIG. 7 is a diagram showing the relationship between the irradiation angle of argon ions Ar ⁺ and the amount of chamfering.

FIG. 8 is a diagram showing the relationship between the irradiation angle of argon ions Ar ⁺ and the reduction rate of the reattached substance.

FIG. 9 is a diagram showing the relationship between the irradiation angle of argon ions Ar ^{+ and} the thickness of the redeposited substance.

FIG. 10 is a diagram showing a state in which a thread surface portion and a corner portion in a peripheral portion of the slider are chamfered and then cut for each slider.

FIG. 11 is a view showing a series of steps from a conventional thin film magnetic head element forming step to a wafer cutting step.

FIG. 12 is a view showing a conventional photolithography step.

FIG. 13 is a view showing a conventional plasma etching step.

FIG. 14 is a view showing a conventional process of cutting a row after plasma etching to form a slider.

FIG. 15 is a diagram showing a low state before and during conventional plasma etching.

FIG. 16 is a diagram showing a state in which a peripheral corner portion and a thread surface portion of a conventional ABS are mechanically polished.

[Explanation of symbols]

10a: magnetic head wafer, 10: ceramic substrate,
11a: thin-film magnetic head element, 11b: pad (terminal part), 12: thin-film magnetic head element layer (film surface), 15: element row (row), 16: groove, 16a: peripheral part of slider,
16b: rounded portion, 17: rail pattern, 18: mask (protective film), 19: thin-film magnetic head slider, 20: substrate, 30: photosensitive resin film, 30a: mask pattern, 4
0: plasma etching apparatus, 41: rotating shaft, 42: rotating plate, 43: plasma ion gun

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁷ , DB name) G11B 5/60 G11B 21/21

Claims (6)

(57) [Claims] 1. A method of manufacturing a thin film magnetic head slider having a thin film magnetic head element on the air outflow end side of a slider having a flying surface formed with a rail pattern of a predetermined shape formed on a surface side facing a magnetic recording medium. A photosensitive resin film is attached to a cut surface of an element row formed by cutting a wafer in which a large number of the thin-film magnetic head elements are formed in a vertical direction and a horizontal direction on a surface thereof, into element rows. After arranging a photomask on the photosensitive resin film, exposing and developing to form a mask pattern of a predetermined shape on a cut surface of the element row; A first plasma etching step of irradiating an ion beam at an angle and grinding the surface on which the mask pattern is formed by a predetermined engraving amount to form a rail pattern of each slider; A grooving step of forming a groove for partitioning the element row for each slider on a surface on which a rail pattern is formed by the first plasma etching step; and a periphery of each slider having a groove formed by the grooving step. Plasma etching step of chamfering the yarn face portion and the corner portion of the portion by plasma etching, and a slider cutting step of cutting each slider along the groove of the element row chamfered in the second plasma etching step And a method for manufacturing a thin film magnetic head slider. 2. Prior to the chamfering step, after a photosensitive resin film is adhered to the surface of the element row in which the groove is formed by the grooving step, and a photomask is arranged on the photosensitive resin film. 2. A thin film magnetic head slider according to claim 1, further comprising a second photolithography step of exposing, developing, and forming a mask pattern on a surface other than a peripheral portion of each of the sliders in the element row. Method. 3. The method according to claim 1, wherein the predetermined angle in the first plasma etching step is an angle of 30 to 60 degrees with respect to a surface on which the mask pattern is formed.
A method for manufacturing a thin film magnetic head slider according to claim 2. 4. In the second plasma etching step, an ion beam is irradiated at a first angle with respect to a surface on which a rail pattern of the slider is formed, so that a thread surface portion and a corner portion around the slider have a predetermined angle. A grinding step of grinding only the slider, a removal step of irradiating an ion beam at a second angle with respect to a surface on which a rail pattern of the slider is formed, and removing a residue adhering substance ground in the grinding step; 4. A cleaning step of irradiating an ion beam at a third angle to a surface on which the rail pattern is formed to clean the entire surface of the slider. A manufacturing method of the thin film magnetic head slider according to the above. 5. The method according to claim 5, wherein the first angle is an angle of 5 to 20 degrees with respect to the rail pattern forming surface, and the second angle is an angle of 75 to 85 degrees with the rail pattern forming surface. 5. The method according to claim 4, wherein the third angle is an angle of 30 to 60 degrees with respect to a surface on which the rail pattern is formed. 6. A grinding and polishing step of cutting and grinding a cut surface of each element row by a predetermined amount after cutting the wafer into element rows for each row. A method for manufacturing a thin-film magnetic head slider according to any one of the above.