JPH11183929A - Liquid crystal display element - Google Patents

Liquid crystal display element

Info

Publication number
JPH11183929A
JPH11183929A JP35431997A JP35431997A JPH11183929A JP H11183929 A JPH11183929 A JP H11183929A JP 35431997 A JP35431997 A JP 35431997A JP 35431997 A JP35431997 A JP 35431997A JP H11183929 A JPH11183929 A JP H11183929A
Authority
JP
Japan
Prior art keywords
liquid crystal
insulating layer
crystal display
substrate
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP35431997A
Other languages
Japanese (ja)
Inventor
Kiyoshi Shobara
潔 庄原
Daisuke Miyazaki
大輔 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP35431997A priority Critical patent/JPH11183929A/en
Publication of JPH11183929A publication Critical patent/JPH11183929A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal display element having an excellent display performance, a wide numerical aperture, a high yield, and high reliability. SOLUTION: A hole part arranged in an insulating layer to electrically connect an image electrode 17 with a switching element 14 is formed in a curved surface in the edge part 24, and when an average radius of curvature of the edge part 24 sectional form is made to r, and an average thickness of the insulating layer is made to d, r is in a range of larger than d/10 and smaller than 10d.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示素子に関
する。
[0001] The present invention relates to a liquid crystal display device.

【0002】[0002]

【従来の技術】近年、薄膜トランジスタ(以下TFTと
称す)を用いた液晶表示素子の高輝度化,低消費電力化
の為に、開口率を向上させることが望まれている。開口
率を高くできる構造の一つとして、アクティブマトリク
ス基板の走査線及び信号線の配線やスイッチング素子で
あるTFTの上を絶縁層で覆い、画素電極をその画素の
周囲を取り囲んでいる走査線や信号線の配線の上にまで
広げる構造が知られている。この画素電極を絶縁膜の上
に形成する構造では、画素電極とスイッチング素子を接
続する為に、前記絶縁膜にフォトリソ法などによって形
成された孔部例えばコンタクトホールを設けている。
2. Description of the Related Art In recent years, it has been desired to improve the aperture ratio in order to increase the brightness and reduce the power consumption of a liquid crystal display device using a thin film transistor (hereinafter referred to as TFT). One of the structures that can increase the aperture ratio is to cover the scanning lines and signal line wiring of the active matrix substrate and the TFT that is a switching element with an insulating layer, and to surround the pixel electrode with the scanning line surrounding the pixel. 2. Description of the Related Art A structure in which a signal line is extended over a signal line is known. In the structure in which the pixel electrode is formed on the insulating film, a hole, for example, a contact hole formed by a photolithographic method or the like is provided in the insulating film in order to connect the pixel electrode and the switching element.

【0003】このコンタクトホールを介して、画素電極
とスイッチング素子が接続されており、特にそのエッジ
部形状により、接続の信頼性が大きく左右される。即
ち、コンタクトホールのエッジ部形状が従来の垂直乃至
急な角度を持った形状であると、覆ってある接続導電膜
(例えばITO透明導電薄膜)にクラックなどのミクロ
的な不連続面が発生し接続抵抗が劣化あるいはコンタク
ト不良が発生し、点欠陥などの表示不良が発生すること
が確認された。
The pixel electrode and the switching element are connected via the contact hole, and the reliability of the connection largely depends on the shape of the edge part. That is, when the edge portion of the contact hole has a conventional shape having a vertical or steep angle, a microscopic discontinuous surface such as a crack occurs in the overlying connection conductive film (for example, ITO transparent conductive thin film). It was confirmed that the connection resistance deteriorated or a contact failure occurred, and a display failure such as a point defect occurred.

【0004】[0004]

【発明が解決しようとする課題】本発明は、上記課題を
解決しようとするものであり、広開口率で表示性能が良
く、高歩留りかつ高信頼性な液晶表示素子を提供するこ
とを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid crystal display device having a wide aperture ratio, good display performance, high yield and high reliability. I do.

【0005】[0005]

【課題を解決するための手段】本発明による液晶表示素
子の第1の形態は、基板とこの基板の主面上に配置され
たスイッチング素子とこのスイッチング素子に接続しマ
トリックス状に配置された走査線及び信号線と、このス
イッチング素子と走査線と信号とを少なくとも被覆する
絶縁層と、この絶縁層上に配置された画素電極と、この
画素電極とこのスイッチング素子とを電気的に接続する
ためこの絶縁層に配置された孔部とを備えたアクティブ
マトリックス基板と、基板と、この基板の主面上に配置
された共通電極とを備えた対向基板と、このアクティブ
マトリックス基板とこの対向基板との間隙に配置された
液晶材料とを備えた液晶表示素子において、この孔部
は、孔部の絶縁層のエッジ部形状を曲面形状とし、その
エッジ部断面形状の平均曲率半径rとし、この絶縁層の
平均厚さをdとした時、rは、d/10以上10d以下の範
囲にあることを特徴とする。
A first embodiment of a liquid crystal display device according to the present invention is a substrate, a switching element disposed on a main surface of the substrate, and a scanning device connected to the switching element and arranged in a matrix. Lines and signal lines, an insulating layer covering at least the switching element, the scanning line, and the signal, a pixel electrode disposed on the insulating layer, and an electrical connection between the pixel electrode and the switching element. An active matrix substrate having holes arranged in the insulating layer, a substrate, a counter substrate including a common electrode disposed on a main surface of the substrate, an active matrix substrate and the counter substrate, In the liquid crystal display element having the liquid crystal material disposed in the gap, the hole has a curved edge shape of the insulating layer in the hole, and the edge has a cross-sectional shape. And Hitoshikyoku radius r, when the average thickness of the insulating layer was set to d, r is characterized in that within the following range d / 10 or more 10d.

【0006】本発明による液晶表示素子の第2の形態
は、孔部の絶縁層のエッジ部曲面が、その表面がd/50
以下の微小な凹凸が配置されてることを特徴とする。本
発明による液晶表示素子の第3の形態は、孔部の絶縁層
のエッジ部曲面が、その曲率半径が0.1 μm乃至100 μ
mの範囲にあることを特徴とする。本発明による液晶表
示素子の第4形態は、絶縁層が着色層の機能を有してい
ることを特徴とする。
In a second embodiment of the liquid crystal display device according to the present invention, the curved surface of the edge of the insulating layer in the hole has a surface of d / 50.
It is characterized in that the following minute irregularities are arranged. In a third mode of the liquid crystal display device according to the present invention, the curved surface of the edge of the insulating layer in the hole has a radius of curvature of 0.1 μm to 100 μm.
m. A fourth embodiment of the liquid crystal display device according to the present invention is characterized in that the insulating layer has a function of a colored layer.

【0007】[0007]

【発明の実施の形態】液晶表示素子において図11に示す
様にコンタクトホール部では絶縁層1上の画素電極2、
例えばITO透明導電薄膜と絶縁層1下のスイッチング
素子とを低抵抗かつ高信頼性で接続することが重要であ
る。コンタクトホール部のエッジ部3が図3の様に鋭く
切立っていたり、鋭角的にくびれていたり(いわゆる逆
テーパ状)、あるいは図4の様にある角度を持って屈折
していると、工程中及び使用環境での熱や力学的なスト
レスにより絶縁層1とITO及びアクティブ素子端子と
の熱膨張率の違いや、弾性率などの違いにより、ITO
接続抵抗の悪化や接続不良などの問題が発生する。それ
に対し、図1,図2の様にコンタクトホールのエッジ部
3形状が曲面でありその断面形状が絶縁層1の平均厚み
をdとすると、平均曲率半径rはd/10≦r≦10dであ
れば、上記熱や力学的なストレスによるITO接続抵抗
の悪化や接続不良が起こらなくなり、信頼性上も問題が
無くなる。更に、図2に示す様にコンタクトホールのエ
ッジ部3にd/50以下の微小な凹凸を持たせることによ
りエッジ部3とITOなどのコンタクト導電層との密着
性が向上し高信頼性が得られる。なお、平均曲率半径
は、コンタクトホール部のエッジ部3を微小範囲で見た
ときの曲率半径rn のエッジ部全体の平均値を示し、
DESCRIPTION OF THE PREFERRED EMBODIMENTS In a liquid crystal display device, as shown in FIG.
For example, it is important to connect the ITO transparent conductive thin film and the switching element under the insulating layer 1 with low resistance and high reliability. If the edge portion 3 of the contact hole portion is sharply sharp as shown in FIG. 3, sharply constricted (so-called reverse taper shape), or bent at an angle as shown in FIG. Due to the difference in the thermal expansion coefficient between the insulating layer 1 and the ITO and the active element terminals due to the heat and mechanical stress in the medium and use environment, and the difference in the elastic modulus, the ITO
Problems such as poor connection resistance and poor connection occur. On the other hand, as shown in FIGS. 1 and 2, if the shape of the edge portion 3 of the contact hole is a curved surface and the cross-sectional shape is d, the average thickness of the insulating layer 1 is d / 10 ≦ r ≦ 10d. If so, the deterioration of the ITO connection resistance and the connection failure due to the above-mentioned heat and mechanical stress do not occur, and there is no problem in reliability. Further, as shown in FIG. 2, by providing the edge portion 3 of the contact hole with minute unevenness of d / 50 or less, the adhesion between the edge portion 3 and a contact conductive layer such as ITO is improved, and high reliability is obtained. Can be Note that the average radius of curvature indicates the average value of the entire radius of the radius of curvature rn when the edge 3 of the contact hole portion is viewed in a minute range,

【0008】[0008]

【数1】 で示す。(Equation 1) Indicated by

【0009】コンタクトホールのエッジ部の断面形状の
平均曲率半径がd/10より小さくなると鋭く切立つエッ
ジ部とほぼ同等となり熱ストレスなどにより信頼性は低
下することを本発明者は確認した。また、曲率半径が10
dより大きくなると、コンタクトホール形状が大きくな
りすぎて、開口率の低下を招き、特性が低下することを
本発明者は確認した。よって、コンタクトホール部のエ
ッジ部の平均曲率半径rはd/10≦r≦10rが良好な表
示特性と高信頼性のコンタクトが得られる範囲である。
実質的にはコンタクトホールの絶縁層1のエッジ部3断
面形状が曲率半径0.1 μm以上100 μm以下であるとほ
ぼ全ての液晶表示素子で良好な表示特性を得られること
を確認した。
The inventor has confirmed that when the average radius of curvature of the cross-sectional shape of the edge portion of the contact hole is smaller than d / 10, the edge portion becomes almost the same as the sharply sharp edge portion, and the reliability is reduced due to thermal stress or the like. The radius of curvature is 10
The present inventor has confirmed that, when d is larger than d, the shape of the contact hole becomes too large, causing a decrease in the aperture ratio and deteriorating the characteristics. Therefore, the average radius of curvature r of the edge portion of the contact hole portion is d / 10 ≦ r ≦ 10r, which is a range where good display characteristics and highly reliable contact can be obtained.
Practically, it was confirmed that good display characteristics can be obtained in almost all liquid crystal display elements when the cross-sectional shape of the edge portion 3 of the insulating layer 1 in the contact hole has a curvature radius of 0.1 μm or more and 100 μm or less.

【0010】また、図2に示す様にコンタクトホールの
絶縁層1のエッジ部3に微小な凹凸を有するとコンタク
ト導電層のコンタクトホールへの密着性が向上するが、
その凹凸がd/50より大きくなると、熱などによる局部
ストレスがたまりやすくなり、コンタクト不良の原因と
なることを本発明者は確認した。よって、コンタクトホ
ール部の絶縁層1のエッジ部3に微小な凹凸はd/50以
下が良い。
Further, as shown in FIG. 2, if the edge portion 3 of the insulating layer 1 of the contact hole has minute irregularities, the adhesion of the contact conductive layer to the contact hole is improved.
The present inventor has confirmed that if the irregularities are larger than d / 50, local stress due to heat or the like is likely to accumulate, causing a contact failure. Therefore, it is preferable that the minute unevenness on the edge 3 of the insulating layer 1 in the contact hole is d / 50 or less.

【0011】なお、コンタクトホール部のエッジ部3の
断面形状の平均曲率半径のコントロールは、フォトリソ
の露光条件,エッチング条件,絶縁層1材質によりコン
トロール可能である。
The control of the average radius of curvature of the cross-sectional shape of the edge portion 3 of the contact hole can be controlled by the exposure conditions of photolithography, etching conditions, and the material of the insulating layer 1.

【0012】[0012]

【実施例】以下本発明を用いた液晶表示素子の実施例を
詳細に説明する。 (実施例1)図5は本発明による一実施例の液晶表示素
子の模式的な断面図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a liquid crystal display device using the present invention will be described below in detail. (Embodiment 1) FIG. 5 is a schematic sectional view of a liquid crystal display device according to an embodiment of the present invention.

【0013】図6は本発明による一実施例のアレイ基板
側の模式的な平面図である。なお、アレイ基板側は図6
のA´−A″−A''' 部の断面図である。通常のTFT
14を形成するプロセスと同様に成膜とパターンニングを
繰り返し、薄膜トランジスタ14と信号線11,走査線であ
るゲート線12,累積容量線13の電極配線及びTFT14の
ソース電極と蓄積容量の電極を兼ねた電極15をガラス基
板21の主面に形成してなるたて400 画素,横640 画素,
画素ピッチ300 μmのポリシリコンTFTアレイ基板を
形成した。この基板21のTFTアレイの上にアクリル樹
脂の絶縁層22を厚さ3μmとなる様に塗布し、画素電極
17のところにフォトリソ法によりコンタクトホール23を
あけ、その後オゾンプラズマ処理を施した。コンタクト
ホール23のエッジ部24は曲面でありその断面の平均曲率
半径は約3μmであり、エッジ部24は0.02μm以下の微
小な凸凹を有していた。その上にITOを1500オングス
トローム成膜、パターンニングして画素電極17を形成し
た。
FIG. 6 is a schematic plan view of an embodiment of the present invention on the array substrate side. The array substrate side is shown in FIG.
3 is a cross-sectional view taken along the line A′-A ″ -A ″ ′ of FIG.
The film formation and patterning are repeated in the same manner as in the process of forming, and the thin film transistor serves as the signal line 11, the gate line 12 serving as a scanning line, the electrode wiring of the accumulation capacity line 13, and the source electrode of the TFT 14 and the electrode of the storage capacity. Electrodes 15 are formed on the main surface of the glass substrate 21 to form 400 pixels, 640 pixels in width,
A polysilicon TFT array substrate having a pixel pitch of 300 μm was formed. An insulating layer 22 of acrylic resin is applied on the TFT array of the substrate 21 so as to have a thickness of 3 μm.
A contact hole 23 was opened at 17 by a photolithography method, and then an ozone plasma treatment was performed. The edge portion 24 of the contact hole 23 was a curved surface, the average radius of curvature of the cross section was about 3 μm, and the edge portion 24 had minute irregularities of 0.02 μm or less. A pixel electrode 17 was formed thereon by forming a 1500 angstrom film of ITO and patterning.

【0014】このアレイ基板の表面に、配向膜材料とし
てAL-1051 (日本合成ゴム(株)製)を1000オングスト
ロームの厚さに塗布し配向処理方向19へラビリング処理
を行ない、配向膜(図示せず)を形成した。
On the surface of the array substrate, AL-1051 (manufactured by Nippon Synthetic Rubber Co., Ltd.) is applied as a material for an alignment film to a thickness of 1000 angstroms, and a rubbing process is performed in the alignment process direction 19 to obtain an alignment film (shown in the drawing). Was formed.

【0015】次に赤,緑,青のカラーフィルタと共通電
極のITOからなる対向電極32を主面に形成してある対
向基板31に同様に配向膜としてAL−1051(商品名)を
塗布しラビングを行い、基板の周囲に接着剤を印刷し
た。
Next, AL-1051 (trade name) is similarly coated as an alignment film on a counter substrate 31 having a main surface on which a counter electrode 32 made of a red, green, and blue color filter and ITO as a common electrode is formed. Rubbing was performed and an adhesive was printed around the substrate.

【0016】次にアレイ、対向各基板の配向膜が対向
し、また夫々のラビング方向が90度となる様に基板を配
置し、加熱して接着剤を硬化させることで夫々基板を張
り合わせた。次に通常の方法に依り注入口より液晶組成
物としてZLI−4792(E.メルク社製)にCNを0.3w
t%添加したものを注入し、この後注入口を封止した。
Next, the substrates were arranged such that the alignment films of the array and the opposed substrates faced each other, and the rubbing directions were 90 degrees, and the substrates were bonded by heating to cure the adhesive. Next, CN was added to ZLI-4792 (manufactured by E. Merck) as a liquid crystal composition in an amount of 0.3 W from the injection port by a usual method.
The one added with t% was injected, and thereafter the injection port was sealed.

【0017】こうして形成したカラー表示型アクティブ
マトリクス液晶表示素子は、良好な表示が得られ、かつ
−20℃←→60℃の温度サイクル試験を100 回行ったがコ
ンタクトホール部コンタクト不良に起因する点欠陥など
の不良は発生せず良好な表示が得られた。なお、33はゲ
ート絶縁膜,34はアンダーコート層,35は補助容量を示
す。
The color display type active matrix liquid crystal display element formed in this way can provide good display and has been subjected to a temperature cycle test of −20 ° C. →→ 60 ° C. 100 times. Good display was obtained without occurrence of defects such as defects. 33 indicates a gate insulating film, 34 indicates an undercoat layer, and 35 indicates an auxiliary capacitor.

【0018】(実施例2)図7は本発明の一実施例の液
晶表示素子の模式的な断面図である。実施例1と同様
に、ガラス基板の主面に電極配線11,TFT14を形成
し、その表面に絶縁層を兼ねたコンタクトホール23を設
けたカラーフィルタ42,43,44を厚さ4μmで形成し
た。コンタクトホール23のエッジ部は曲面でありその断
面の平均曲率半径は5μmであり、0.04μm以下の微小
な凹凸を有していた。その上に画素電極17のITO透明
導電層(図示せず)1000オングストローム形成した。次
にこのアレイ基板41と、主面に共通電極32を形成してあ
る対向基板31とを実施例1と同様に組合わせて液晶表示
素子を作成した。こうして形成したカラー表示型アクテ
ィブマトリクス液晶表示素子は、良好な表示が得られ、
かつ−20℃←→60℃の温度サイクル試験を100 回行った
がコンタクト不良に起因する点欠陥などの不良は発生せ
ず良好な表示が得られた。
Embodiment 2 FIG. 7 is a schematic sectional view of a liquid crystal display device according to one embodiment of the present invention. In the same manner as in Example 1, the electrode wiring 11 and the TFT 14 were formed on the main surface of the glass substrate, and the color filters 42, 43, and 44 provided with the contact holes 23 also serving as insulating layers on the surface were formed with a thickness of 4 μm. . The edge portion of the contact hole 23 was a curved surface, and the average radius of curvature of the cross section was 5 μm, and had fine irregularities of 0.04 μm or less. An ITO transparent conductive layer (not shown) of the pixel electrode 17 was formed thereon at 1000 Å. Next, the array substrate 41 and the counter substrate 31 having the common electrode 32 formed on the main surface were combined in the same manner as in Example 1 to produce a liquid crystal display element. The color display type active matrix liquid crystal display element formed in this way can obtain good display,
A temperature cycle test of −20 ° C. →→ 60 ° C. was performed 100 times, but no defect such as a point defect caused by a contact defect occurred and a good display was obtained.

【0019】(比較例)図8に本発明の比較例の液晶表
示素子の模式的な断面図である。実施例1と同様にガラ
ス基板の主面に電極配線11,12,TFT14を形成し、そ
の表面にアクリル樹脂の絶縁膜22を厚さ3μmとなる様
に塗布し、画素電極17のところにフォトリソ法によりコ
ンタクトホール23をあけた。コンタクトホール23のエッ
ジ部はほぼ垂直に切り立っている。その上にITO(図
示せず)を1500オングストローム成膜し、パターンニン
グして画素電極17を形成した。
(Comparative Example) FIG. 8 is a schematic sectional view of a liquid crystal display device according to a comparative example of the present invention. Electrode wirings 11 and 12 and TFT 14 are formed on the main surface of the glass substrate in the same manner as in the first embodiment, and an acrylic resin insulating film 22 is applied to the surface so as to have a thickness of 3 μm. A contact hole 23 was opened by the method. The edge of the contact hole 23 is almost vertically upright. A 1500 angstrom film of ITO (not shown) was formed thereon and patterned to form a pixel electrode 17.

【0020】このアレイ基板の表面に、実施例1と同様
に配向膜AL−1051(日本合成ゴム(株)製)を1000オ
ングストロームの厚さに塗布し、ラビング処理を行な
い、配向膜を形成した。
On the surface of this array substrate, an alignment film AL-1051 (manufactured by Nippon Synthetic Rubber Co., Ltd.) was applied to a thickness of 1000 angstroms in the same manner as in Example 1, and a rubbing treatment was performed to form an alignment film. .

【0021】次に赤,緑,青のカラーフィルタと共通電
極のITOを主面に形成してある対向基板上に、同様に
配向膜としてAL−1051(商品名)を塗布し、ラビング
を行い、基板の周囲に接着剤を印刷した。
Next, AL-1051 (trade name) is similarly applied as an alignment film on a counter substrate having red, green and blue color filters and a common electrode ITO formed on the main surface, and rubbed. An adhesive was printed around the substrate.

【0022】次に配向膜が対向し、また夫々のラビング
方向が90度となる様各基板を配置し、加熱して接着剤を
硬化させることで夫々基板を張り合わせた。次に通常の
方法に依り注入口より液晶組成物としてZLI−4792
(E.メルク社製)にCNを0.3wt%添加したものを注入
し、この後注入口を封止した。
Next, the substrates were arranged such that the alignment films faced each other and the rubbing directions were 90 degrees, and the substrates were bonded by heating to cure the adhesive. Next, ZLI-4792 was obtained as a liquid crystal composition from the injection port by a usual method.
(E. Merck) was added with 0.3 wt% of CN added, and then the inlet was sealed.

【0023】こうして形成したカラー表示型アクティブ
マトリクス液晶表示素子は、初期では良好な表示が得ら
れたが、−20℃←→60℃の温度サイクル試験を行ったと
ころコンタクトホール部コンタクト不良に起因する点欠
陥が多発した。
The color display type active matrix liquid crystal display element thus formed provided good display in the initial stage. However, when a temperature cycle test of -20.degree. C..fwdarw.60.degree. Many point defects occurred.

【0024】[0024]

【発明の効果】本発明に依れば、十分なコンタクトホー
ル部コンタクトの信頼性が得られ、高開高率かつ高画
質,高信頼性の液晶表示素子が得られる。
According to the present invention, a sufficient reliability of the contact in the contact hole portion can be obtained, and a liquid crystal display device having a high opening ratio, high image quality and high reliability can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例のコンタクトホール部断面図FIG. 1 is a sectional view of a contact hole portion according to an embodiment of the present invention.

【図2】本発明の実施例のコンタクトホール部断面図FIG. 2 is a sectional view of a contact hole portion according to an embodiment of the present invention.

【図3】本発明の比較例(従来例)のコンタクトホール
部断面図
FIG. 3 is a sectional view of a contact hole portion of a comparative example (conventional example) of the present invention.

【図4】本発明の比較例(従来例)のコンタクトホール
部断面図
FIG. 4 is a sectional view of a contact hole portion of a comparative example (conventional example) of the present invention.

【図5】本発明の実施例の液晶表示素子の模式的な断面
FIG. 5 is a schematic sectional view of a liquid crystal display device according to an example of the present invention.

【図6】本発明の実施例の液晶表示素子の模式的な平面
FIG. 6 is a schematic plan view of a liquid crystal display device according to an example of the present invention.

【図7】本発明の実施例の液晶表示素子の模式的な断面
FIG. 7 is a schematic sectional view of a liquid crystal display device according to an example of the present invention.

【図8】本発明の比較例の液晶表示素子の模式的な断面
FIG. 8 is a schematic sectional view of a liquid crystal display device of a comparative example of the present invention.

【符号の説明】[Explanation of symbols]

1:絶縁層 2:画素電極 3:コンタクトホール(孔部) 11:信号線 12:ゲート線(走査線) 22:絶縁層 23:コンタクトホール(孔部) 24:エッジ部 1: insulating layer 2: pixel electrode 3: contact hole (hole) 11: signal line 12: gate line (scanning line) 22: insulating layer 23: contact hole (hole) 24: edge

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 基板と、この基板の主面上に配置された
スイッチング素子とこのスイッチング素子に接続しマト
リックス状に配置された走査線及び信号線と、前記スイ
ッチング素子と走査線と信号線とを少なくとも被覆する
絶縁層と、この絶縁層上に配置された画素電極と、この
画素電極と前記スイッチング素子とを電気的に接続する
ため前記絶縁層に配置された孔部とを備えたアクティブ
マトリックス基板と、 基板と、この基板の主面上に配置された共通電極とを備
えた対向基板と、前記アクティブマトリックス基板と前
記対向基板との間隙に配置された液晶材料とを備えた液
晶表示素子において、 前記孔部は、前記孔部の前記絶縁層のエッジ部形状を曲
面形状とし、そのエッジ部断面形状の平均曲率半径rと
し、前記絶縁層の平均厚さをdとした時、 rは、d/10以上10d以下の範囲にあることを特徴とす
る液晶表示素子。
1. A substrate, a switching element disposed on a main surface of the substrate, a scanning line and a signal line connected to the switching element and arranged in a matrix, and the switching element, the scanning line, and the signal line. An active matrix comprising: an insulating layer that covers at least a pixel electrode disposed on the insulating layer; and a hole disposed in the insulating layer for electrically connecting the pixel electrode and the switching element. A liquid crystal display device comprising: a substrate; a substrate; a counter substrate including a common electrode disposed on a main surface of the substrate; and a liquid crystal material disposed in a gap between the active matrix substrate and the counter substrate. In the hole, the edge portion shape of the insulating layer of the hole portion is a curved surface shape, the average curvature radius r of the edge portion cross-sectional shape, the average thickness of the insulating layer When a, r is a liquid crystal display element, characterized in that within the following range d / 10 or more 10d.
【請求項2】 請求項1の前記孔部の前記絶縁層のエッ
ジ部曲面は、その表面がd/50以下の微小な凹凸が配置
されていることを特徴とする液晶表示素子。
2. The liquid crystal display device according to claim 1, wherein the curved surface of the edge portion of the insulating layer in the hole has fine irregularities of d / 50 or less.
【請求項3】 請求項1の前記孔部の前記絶縁層のエッ
ジ部曲面は、その曲率半径が0.1 μm乃至100 μmの範
囲にあることを特徴とする液晶表示素子。
3. The liquid crystal display device according to claim 1, wherein the curved surface of the edge portion of the insulating layer in the hole has a radius of curvature in a range of 0.1 μm to 100 μm.
【請求項4】 請求項1の前記絶縁層は、着色層の機能
を有していることを特徴とする液晶表示素子。
4. The liquid crystal display device according to claim 1, wherein the insulating layer has a function of a colored layer.
JP35431997A 1997-12-24 1997-12-24 Liquid crystal display element Pending JPH11183929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35431997A JPH11183929A (en) 1997-12-24 1997-12-24 Liquid crystal display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35431997A JPH11183929A (en) 1997-12-24 1997-12-24 Liquid crystal display element

Publications (1)

Publication Number Publication Date
JPH11183929A true JPH11183929A (en) 1999-07-09

Family

ID=18436759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35431997A Pending JPH11183929A (en) 1997-12-24 1997-12-24 Liquid crystal display element

Country Status (1)

Country Link
JP (1) JPH11183929A (en)

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