JPH11177183A - Surface emitting semiconductor light emitting device and array, image forming apparatus and image display apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor light emitting device exhibiting good output properties. SOLUTION: A first multilayer film mirror 14, a first spacer layer 16, an active area 18, a second spacer layer 20 and second multilayer film mirror layers 22 and 24 are disposed in order on a semiconductor substrate 10 to form a surface emitting semiconductor light emitting device. A third layer 28 of conductive type different from the layer to be inserted in one of the layers except the active area is inserted to form a switching device in the surface emitting semiconductor light emitting device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-emitting type semiconductor light-emitting device, and more specifically, to a surface-emitting type semiconductor light-emitting device used as a light source for laser printers, laser displays, optical communication devices and optical signal processing devices. Surface emitting semiconductor light emitting devices such as semiconductor lasers, surface emitting semiconductor light emitting device arrays formed by arranging surface emitting semiconductor light emitting devices in a matrix, and image formation using this surface emitting semiconductor light emitting device array as a light source The present invention relates to a device and an image display device.

[0002]

2. Description of the Related Art A surface-emitting type semiconductor laser is a device in which an active region is sandwiched between multilayer mirrors, and light generated in an active layer is reflected by a multilayer mirror to amplify the light and cause laser oscillation. In order to inject a current into the active layer, one of the multi-layer mirrors is usually made n-type conductive and the other is made p-type conductive, and a current is applied to these mirrors to inject the current into the active layer.

In a laser array in which a large number of surface emitting semiconductor lasers are arranged, if individual electrodes are arranged for each laser, the same number of wirings as the number of lasers are required, which is complicated.
A matrix wiring requiring a small number of wirings is employed. For example, for a laser array of 10 rows x 30 columns,
When wiring individual electrodes, the cathode electrode is taken as a common electrode on a conductive substrate, and only the anode electrode is used for individual lasers 30.
There will be 300 wires for zero. On the other hand, in the matrix wiring, the substrate is made semi-insulating, 10 anode wirings are formed in the row direction of the laser array, and 30 cathode wirings are formed in the column direction, and individual lasers are arranged at the intersections. do it. The number of wires can be reduced to a total of 40 wires. From such a viewpoint, matrix wiring is adopted for a large number of laser arrays.

However, as shown in FIG. 14, the anode wiring 138 and the cathode wiring 136 of the surface emitting laser array are usually
Since the electrodes are formed on the uppermost layer and the lowermost layer of the surface-emitting type laser, it is necessary to form the semi-insulating GaAs substrate 12 on the lowermost layer.
The lowermost GaAs buffer layer 122 is etched by etching the stack of surface emitting lasers formed on
Must be exposed. Incidentally, 124 is an n-type multilayer mirror, 126 is an active region, 128 is a p-type multilayer mirror,
132 is a polyimide.

It is not technically easy to form the cathode electrode 136 on the deep unevenness formed by such etching and to route the wiring. Since the minimum diameter of the convex shape of the surface emitting laser is required to be about 20 μm, when the arrangement pitch of the laser array is smaller than 45 μm, the groove width of the gap of the surface emitting laser is 25 μm. When the depth of this groove is 8 μm or more, it is extremely difficult to dig the element isolation groove 130 at the bottom of such a narrow and deep concave groove, obtain a margin width L for the process, and further form the cathode wiring 136. It is difficult and almost impossible with the current technology level of photolithography. Since both the margin width L and the electrode width α need to be 5 μm, the arrangement pitch of the surface emitting laser array cannot be reduced to 45 μm or less. In other words, it is difficult to narrow the array pitch of a surface-emitting laser array with matrix wiring, and it must be relatively wide. Therefore, cost reduction, high reliability, and high performance due to high-density integration must be achieved. There is a problem that is difficult.

On the other hand, Japanese Patent Application Laid-Open No. Hei 5-243552 reports a technique relating to an optoelectronic integrated circuit in which a surface emitting semiconductor laser and a transistor are stacked. In addition, special table Hei 7
No. 503104 also proposes a structure of a photoelectric integrated circuit in which a surface emitting laser and a transistor are stacked. In both of these techniques, a transistor and a surface emitting laser are stacked, and the driving of the surface emitting laser is controlled by the transistor. A method of two-dimensionally arranging the surface emitting lasers having the transistors mounted thereon and driving the transistors with matrix wiring is described in these documents.

However, when a surface emitting laser and a transistor are stacked, the following problem occurs. That is, when the transistor is arranged at the light extraction port of the surface emitting laser, the transistor absorbs laser light and hardly emits light. Even if the band gap of the transistor is set to be larger than the laser beam to avoid this, the collector layer, base layer, and emitter layer of the transistor are sequentially laminated on the multilayer reflection layer of the surface emitting laser, so that the multilayer film is formed. The periodicity of the mirror configuration is broken, resulting in lower reflectivity,
The output characteristics of the laser deteriorate.

Therefore, in order to stack a surface emitting laser and a transistor, the transistor must be provided on the side opposite to the laser light outlet. That is, when a transistor is stacked on a surface-emitting laser, light must be extracted from the back surface of the substrate. When a surface-emitting laser is stacked on the transistor, light must be extracted from the front surface of the substrate. FIG. 15 shows a structure of a surface emitting laser array on which a conventional transistor is mounted. When the wavelength of the laser light does not pass through the GaAs substrate on which the surface emitting laser and the transistor are stacked, specifically, when the wavelength of the light is shorter than 880 nm, light must be extracted from the front side of the GaAs substrate. As shown in FIG. 15, a transistor including an emitter layer 150, a base layer 152, a collector layer 154, an emitter electrode 156, and a base electrode 158 is laminated on a GaAs substrate 168, and an n-type multilayer film is formed thereon. Inevitably, a surface emitting laser having a mirror 162, an active region 166, a p-type multilayer mirror 164, and a p-type electrode 160 is laminated. In this case, the transistor is etched to a depth of about 8 μm to expose the base layer and the emitter layer, electrodes are formed on the two layers, and the matrix wiring is routed.

As described above, forming the matrix wiring for the emitter and the base at the bottom of the groove having a depth of 8 μm requires:
This is a more difficult technique than the ordinary matrix wiring (FIG. 14). In the laser array having such a configuration, the arrangement pitch of the laser elements cannot be made narrower than that of a laser array provided with ordinary matrix wiring.

In the etching exposure of the emitter layer and the base layer, the etching is stopped exactly at a depth of 8 μm to expose the emitter layer (thickness 0.2 μm), and then the emitter layer 0.2 μm is etched. The base layer (0.
2 μm) must be exposed. The base layer is 0.1
Since it is only about μm, the etching depth must be controlled with extremely high precision.
It is extremely difficult to control a deep etching of about m with an accuracy of 0.1 to 0.2 μm.

As is apparent from the above description, in the technology of laminating a transistor and a surface emitting laser, it is possible to arrange laser elements at a narrow pitch in a surface emitting laser array that outputs light of a short wavelength that does not transmit through a GaAs substrate. There is a problem that can not be. In other words, it is difficult to narrow the array pitch of a matrix-emission surface emitting laser array, and it has to be relatively wide. Therefore, it is difficult to reduce cost and increase reliability by high-density integration. There is.

[0012]

The matrix wiring of the two-dimensionally arranged surface emitting laser array has a deep concave shape because the anode wiring and the cathode wiring are formed on the uppermost layer and the lowermost layer of the surface emitting laser. After performing the etching described above, it is necessary to form an electrode at the bottom of the groove and to route the wiring, and the technical difficulty is high. In particular, the arrangement pitch of the laser array is about 4
When the width is reduced to 5 μm or less, it is difficult to perform photolithography on a narrow and deep groove bottom, and it is extremely difficult to form electrodes and route wiring.

In a conventional surface-emitting type semiconductor light-emitting device in which a transistor is stacked on the light emission side of a surface-emitting type laser, the periodicity of the multilayer mirror of the surface-emitting type laser is broken by the collector layer, base layer and emitter layer of the transistor. Therefore, there has been a problem that the reflectance is reduced and the output characteristics of the laser are reduced.

Therefore, even if a method in which the surface emitting laser array is not directly driven but driven by two-dimensionally arranged transistors is employed, if the laser light does not pass through the substrate, light is emitted from the front surface side of the substrate. A transistor must be inserted underneath the surface-emitting laser for removal, and matrix wiring for this transistor is more difficult than forming a matrix wiring in a conventional surface-emitting laser array. Met.

As described above, there is a problem that it is extremely difficult to arrange light emitting elements of a surface emitting type light emitting element array such as a surface emitting type laser array provided with matrix wiring at a narrow pitch.

The present invention has been made in view of such circumstances, and a first object of the present invention is to provide a surface-emitting type semiconductor light-emitting device having good output characteristics.

Further, according to the present invention, matrix wiring is easy,
A second object is to provide a surface-emitting type semiconductor light-emitting element array which achieves high-density integration.

It is a third object of the present invention to provide an image forming apparatus capable of forming a high-resolution image.

A fourth object of the present invention is to provide an image display device capable of displaying a high-resolution image.

[0020]

According to a first aspect of the present invention, there is provided a semiconductor device, comprising: a first multilayer mirror layer, a first spacer layer, an active region, , A second spacer layer and a second multilayer mirror layer are arranged in this order, in a surface-emitting type semiconductor light-emitting device, a layer inserted into any one of the layers except for the active region and a conductive type A semiconductor layer constituting a switching element composed of the layer to be inserted and the third layer is formed in the light emitting element by inserting a different third layer.

According to a second aspect of the present invention, there is provided a semiconductor device, comprising: a first multilayer mirror layer, a first spacer layer, an active region, a second spacer layer, and a second multilayer mirror. Layers are arranged in this order, at least one of the first multilayer mirror layer and the first spacer layer has the first conductivity type, and at least one of the second spacer layer and the second multilayer mirror layer. One is a surface-emitting type semiconductor light emitting device having a second conductivity type opposite to the first conductivity type, wherein a third layer of the second conductivity type is provided inside or at an end of the layer having the first conductivity type. Or by inserting a third layer of the first conductivity type inside or at the end of the layer having the second conductivity type to form a semiconductor layer forming a switching element, A first electrode formed on a layer having a first conductivity type below the layer, and the third layer A second electrode formed on a layer having a second conductivity type above the second layer and a third electrode formed on the third layer or a contact layer formed on the third layer. By doing so, light emission can be controlled.

According to a third aspect of the present invention, a first multilayer mirror layer, a first spacer layer, an active region, a second spacer layer and a second mirror layer are formed on a conductive semiconductor substrate. A multilayer mirror layer is disposed in this order, the conductive semiconductor substrate and the first multilayer mirror layer have a first conductivity type, and
In a surface-emitting type semiconductor light emitting device in which at least one of the spacer layer and the second multilayer mirror layer has a second conductivity type opposite to the first conductivity type, the first multilayer film having the first conductivity type A third layer of the second conductivity type having the second conductivity type is inserted into the inside or the end of the mirror layer, or the inside or the end of the second multilayer mirror layer having the second conductivity type First,
A semiconductor layer forming a switching element is formed by inserting a third layer of the first conductivity type, and a first electrode formed on the conductive substrate and a second conductivity type above the third layer are formed. The light emission can be controlled by driving the second electrode formed on the third layer and the third electrode formed on the third layer or the contact layer formed on the third layer. It is characterized by the following.

According to a fourth aspect of the present invention, in the surface-emitting type semiconductor light-emitting device according to any one of the first to third aspects, each of the first and second multilayer mirror layers has a thickness. is lambda / a (4 · n _i) (λ is the wavelength of light emitted from the active layer, n _i is the refractive index of each layer) is composed of a laminated structure of the layer, the first spacer layer and the second spacer layer and the active region is configured such that the sum of the values t _i · n _i obtained by multiplying the thickness t _i of them each with refractive index n _i of each layer is equal to lambda, the third layer is first The third layer is formed so as to maintain the above-described configuration of the layer where the layer is inserted.

According to a fifth aspect of the present invention, in the surface-emitting type semiconductor light emitting device according to the fourth aspect, the third layer is formed of a first multilayer mirror layer or a second multilayer mirror layer. The third layer is inserted inside or at an end and is formed so as to maintain the periodicity of the configuration of the multilayer mirror layer into which the third layer is inserted.

In the surface emitting type semiconductor light emitting device having the above structure,
A third multilayer mirror layer of a different conductivity type (hereinafter referred to as a drive switch layer) is provided inside or below the multilayer mirror layer (reflection layer) on the front side of the surface emitting laser. ), A switching element, for example, a pnp junction or npn junction semiconductor layer forming a transistor is formed on the surface side of the surface emitting laser. Then, electrodes are formed on the conductive substrate, the multilayer mirror layer on the front side, and the drive switch layer, and the surface emitting laser is driven by manipulating the potentials or current values of these three electrodes. In this case, the drive switch layer is formed so as to maintain the periodicity of the arrangement of the multilayer mirror layer on the front side.

Therefore, even if the drive switch layer is inserted, the output characteristics of the surface emitting laser can be improved as compared with the related art without lowering the reflectance of the multilayer mirror layer as the reflection layer.

In the above-mentioned surface-emitting type semiconductor light-emitting device, the electrodes are formed on the conductive substrate, the multilayer mirror layer and the drive switch layer on the front surface side. By applying matrix wiring to the mirror layer and the drive switch layer, a laser array can be formed, and each surface emitting laser of this laser array can be driven independently. Since such a matrix wiring is formed on the surface of the substrate having almost no unevenness, it can be easily formed and can be applied to a laser array arranged at a narrow pitch.

According to a sixth aspect of the present invention, in order to achieve a second object, the surface-emitting type semiconductor light-emitting device according to any one of the second to fifth aspects is two-dimensionally arranged, and Forming one of the electrode and the second electrode as a common electrode, and forming a matrix wiring for the other of the first and second electrodes and the third electrode; It is characterized in that each of the surface emitting semiconductor light emitting elements can be driven by these three electrodes.

According to the surface-emitting type semiconductor light-emitting element array having the above structure, the matrix wiring can be formed on the substrate surface having almost no unevenness, so that the matrix wiring is easy and the density of the matrix wiring is increased. And a high-density integration of the surface-emitting type semiconductor light-emitting device.

According to a seventh aspect of the present invention, there is provided a surface emitting semiconductor light emitting element array as a light source, and an image is formed by utilizing light emitted from the light source. Is printed.

In the image forming apparatus having the above-mentioned structure, a high-density integrated surface-emitting type semiconductor light-emitting element array is used as a light source, so that the pixel pitch can be reduced and a high-resolution image can be formed.

According to a fourth aspect of the present invention, there is provided a surface emitting type semiconductor light emitting element array according to the sixth aspect, wherein the light emitted from the light source is an optical system. And irradiates the display surface to display a still image or a moving image.

In the image display device having the above-mentioned structure, a high-density integrated surface-emitting type semiconductor light-emitting element array is used as a light source, so that the pixel pitch can be reduced.
High resolution images can be displayed.

[0034]

Embodiments of the present invention will be described in detail with reference to the drawings.

First Embodiment FIG. 1 shows the structure of a surface emitting semiconductor light emitting device according to a first embodiment of the present invention. In the figure, Si-doped n-type Ga
On the As substrate 10, MOCVD (Metal Organ)
n-type GaAs buffer layer 12 (0.
2 μm thickness, carrier concentration 2 × 10 ¹⁸ / cm ³ ), n-type Al _0.3 G
a _0.7 As / Al _0.9 Ga _0.1 As Multilayer mirror layer 14 (57.6 nm / 64.5
nm × 40.5 period, carrier concentration 2 × 10 ¹⁸ / cm ³ ), Al _0.6 Ga
_0.4 As spacer layer 16 (89.8 nm, non-doped), Al
_0.11 Ga _0.89 As / Al _0.3 Ga _0.7 As (quantum well layer / barrier layer 8 nm /
(5nm × 4 period, non-doped) active region 18, Al _0.6 Ga
_0.4 As spacer layer 20 (89.8 nm, non-doped), p-type A
l _0.3 Ga _0.7 As / Al _0.9 Ga _0.1 As multilayer mirror layer 22 (57.6 nm /
64.5 nm × 23.5 cycles and a carrier concentration of 2 × 10 ¹⁸ / cm ³ ) are sequentially grown.

On top of this, n-type Al _0.3 Ga _0.7 As / Al _0.9 Ga _0.1 As /
Al _0.3 Ga _0.7 As (57.6nm / 64.5nm / 57.6nm, carrier concentration 2
× 10 ¹⁸ / cm ³ ) to form a drive switch layer 28,
The p-type Al _0.3 Ga _0.7 As / Al _0.9 Ga _0.1 As multilayer mirror layer 24 (57.6 nm / 64.5 nm × 4 periods, carrier concentration 6
× 10 ¹⁸ / cm ³ ) and a p-type contact layer 26 (9 nm, carrier concentration 1 × 10 ¹⁹ / cm ³ ). Here, the laminated interface of each multilayer mirror layer was a graded layer whose composition was gradually changed to reduce the electric resistance. Incidentally, n-type Al _0.3 Ga _0.7 As / A
The l _0.9 Ga _0.1 As multilayer mirror layer 14 is the first multilayer mirror layer of the present invention, the Al _0.6 Ga _0.4 As spacer layer 16 is the first spacer layer of the present invention, and the active region 18 is the active layer of the present invention. In the region, the Al _0.6 Ga _0.4 As spacer layer 20 is the second layer of the present invention.
A spacer layer, p-type _{Al 0.3 Ga 0.7 As / Al 0.9} Ga 0.1 As multilayer mirror layer 22 and the p-type _{Al 0.3 Ga 0 .7 As / Al} 0.9 Ga 0.1 As multilayer mirror layer 24 and the second of the present invention The multilayer mirror layer of
The drive switch layer 28 corresponds to a third layer of the present invention.

[0037] The thickness t _i of each layer of the multilayer mirror layer 14,22,24 and a driving switch layer 28, for light of a laser wavelength lambda (780 nm _{here), t i = λ / (} 4 · n i )
( _Ni is the refractive index of each layer), and a high reflectance is achieved. Also, the spacer layer 1
6, 20 and each layer of the active region 18 are set so that the sum of the value t _i × n _i obtained by multiplying the thickness t _{i of} each layer by the refractive index n _i is equal to λ, and serves as a laser resonator. Play.

Next, protons were injected into the surface emitting laser structure layer having such a laminated structure to electrically separate the individual laser elements, and at the same time, a current confinement structure was formed near the active region 18. As shown in FIG. 1, the method uses proton (H ⁺ ) so that the diameter of the current constriction becomes 5 μm.
Is irradiated. The acceleration voltage of the proton irradiation was changed to about several hundred kV, and the proton injection region reached the n-type multilayer mirror layer 14 below the active region 18. By forming the proton injection region in this manner, the active region 18 of the laser element and the p-type multilayer mirror layers 22 and 2 above the active region 18 are formed.
4 and the drive switch layer 28 are insulated and electrically separated from the adjacent laser element. After the proton implantation, a heat treatment for restoring crystallinity was performed.

Next, a silicon oxide film is deposited to a thickness of 0.2 μm on the outermost surface of the laser structure layer, and is patterned.
As shown in (1), a part of the p-type contact layer 26 and a part of the p-type multilayer mirror layer 24 are removed by etching to expose a part of the drive switch layer 28. The drive switch contact layer 30 of n-type GaAs is formed on the exposed surface of the drive switch layer 28.
(Carrier concentration 2 × 10 ¹⁸ / cm ³ ) is selectively grown to a film thickness of 0.1 μm.

Finally, the n-type drive switch contact layer 3
The drive switch electrode 36 (third electrode of the present invention) and the p-type electrode 34 (corresponding to the second electrode of the present invention) for the 0, p-type contact layer 26 and n-type GaAs substrate 10, respectively. An n-type electrode 32 (corresponding to a first electrode of the present invention) was provided. Drive switch electrode 36 and n-type electrode 32
, An AuGe alloy and the p-type electrode 34 an AuZn alloy.
The size of the p-type electrode 34 is, for example, 20 μm square, and a light emission port having a diameter of 5 μm is perforated at the center thereof.

The driving characteristics of the surface emitting laser device (FIG. 1) as the surface emitting semiconductor light emitting device thus manufactured were examined by simulation. First, FIG. 3 shows an equivalent circuit of a surface emitting laser element. From below, the n-type multilayer mirror layer 14, the active region 18, the spacer layers 16, 20, p
The equivalent circuit is described in the order of the type multilayer mirror layer 22, the n-type drive switch layer 28, and the p-type multilayer mirror layer 24. In the drawing, the electric resistance is represented by a symbol beginning with r, and the capacitance is represented by a symbol beginning with c. Since the n-type drive switch layer 28 is inserted between the p-type multilayer mirror layer 22 and the p-type multilayer mirror layer 24, two pn junction diodes face the upper and lower interfaces. And a semiconductor layer forming a pnp junction transistor as a switching element is formed.

From the detailed structure of the surface emitting laser device shown in FIG. 1 described above, the resistance value, the capacitance and the characteristics of the pn junction diode of the equivalent circuit shown in FIG.
A simulation was performed using a CE simulator program.

As a method for driving the surface emitting laser element, n
The potential V0 of the mold electrode 32 was set to the ground level (0 V), the potential V1 of the p-type electrode 34 was set to 10 V, and only the potential V2 of the drive switch electrode 36 was changed from 10 V to 7.0 V. FIG. 4 shows the current flow at that time. As can be seen from FIG. 4, when the potential V2 of the drive switch electrode 36 becomes 8.5 V or less, a current starts flowing from the p-type electrode 34 to the active region 18. At this time, the amount of current flowing through drive switch electrode 36 is １ ／ of the value of the current flowing from p-type electrode 34 to active region 18.
It is. However, when the potential V2 of the drive switch electrode 36 is about 8 V or less, the current flowing through the active region 18 is saturated, but the current flowing through the drive switch electrode 36 increases linearly. That is, the potential V2 of the drive switch electrode 36
Is lower than 8 V, the potential V2 becomes the drive switch electrode 3
6 contributes only to an increase in current flowing through the active region 18 and does not contribute to an increase in current flowing through the active region 18. This is because when the potential V2 of the drive switch electrode 36 is 8 V or less, the drive switch layer 28
Valence band potential does not act as a barrier to holes, which are majority carriers in the p-type multilayer mirror layer, so that current flows easily, and current flows from the p-type electrode 34 to the drive switch layer 28. This is because it flows out of the device from the switch layer 28 to the drive switch electrode 36. Since the value of the current flowing into the active region 18 is proportional to the potential difference between the drive switch layer 28, that is, the drive switch electrode 36 and the n-type electrode 32, the lower the potential of the drive switch electrode 36 is reduced to 8V or less, the lower the p-type electrode becomes. To drive switch electrode 3
6, the current flowing in the active region 18 decreases. As described above, when no voltage is applied to each electrode, the drive switch layer 28 functions as a potential barrier for holes, which are majority carriers of the p-type multilayer mirror layer 22, and functions to block the flow of holes. But,
By raising and lowering the potential of the drive switch layer 28, that is, the drive switch electrode 36, the height of the potential barrier can be raised and lowered, and the current flowing through the active region 18 can be controlled.

The operation principle will be described in detail with reference to FIG. In FIG. 2, when the potential of the n-type electrode 32a is set to the ground level (0V) and the potentials of the p-type electrode 34a and the drive switch electrode 36a are set to 10V, the n-type electrode 32a is 0V and the p-type electrode 34a is Drive switch layer 3
2a moves downward by 10 ev on the figure. That is,
The Fermi level of the p-type electrode 34a and the drive switch layer 28a is horizontal, and the Fermi level of the layer on the right side of the p-type multilayer mirror layer 22a is inclined upward to the right.

However, since the valence band of the drive switch layer 28a protrudes downward by about 2.0 V due to the built-in potential and forms a potential barrier, the holes in the p-type multilayer mirror layer 24a are p-type. It cannot move to the multilayer mirror layer 22a, and no current flows. However, when the potential of the drive switch electrode 36a is set to 8.5V,
The potential of the drive switch layer 28a is changed to the p-type electrode 34a.
It moves 1.5 eV above, and the potential barrier becomes lower. Then, the current starts to flow gradually. When the potential of the drive switch layer 28a is lowered to 8.0 V, the height of the potential barrier becomes almost the same as the Fermi level of the p-type electrode 34a, and holes are formed without being hindered by the potential barrier by the drive switch layer 28a. Can move to the multilayer mirror layer 22a. The value of the current flowing through the active region 18a depends on the driving switch layer 28a and the n-type electrode 32a.
Is divided by the resistance value between the layers.

The potential of the drive switch layer 28a is set at 8.
When the voltage is set to 0 V or less, the potential of the valence band becomes p
This time, it becomes an upward recess with respect to the mold multilayer mirror layer 22a. That is, a current easily flows in the forward direction of the pn junction, and the current flows out of the device from the p-type electrode 34a to the drive switch layer 28a and from the drive switch layer 28a to the drive switch electrode 36a. Active area 18
a is proportional to the potential difference between the drive switch layer 28a and the n-type electrode 32a.
a, that is, decreases as the potential of the drive electrode 36a decreases. That is, the lower the potential of the drive switch layer 28a, that is, the drive electrode 36a, is reduced to 8.0 V or less,
A current flows from the p-type electrode 34a to the drive switch electrode 36a, and the value of the current flowing to the active region 18 decreases.

As described above, the results of the simulation have been described with reference to FIG. 2. According to the simulation, the surface emitting laser as the surface emitting semiconductor light emitting device according to the first embodiment of the present invention has an n-type. It can be seen that current can be injected into the active region of the surface emitting laser by manipulating the potentials of the electrode 32a, the p-type electrode 34a, and the drive switch electrode 36a. Of course, it is needless to say that the same effect can be obtained by operating the current values of these three electrodes.

According to the surface-emitting type semiconductor light-emitting device according to the first embodiment of the present invention, the inside or below the multilayer mirror layer (reflection layer) on the front side constituting the surface-emitting type laser device. Then, a semiconductor layer forming a switching element (transistor) is formed on the surface side of the surface-emitting laser by inserting a third-layer multilayer mirror layer (drive switch layer) of a different conductivity type as a third layer. In addition, electrodes are formed on the conductive substrate, the multilayer mirror tank on the front side, and the drive switch layer, and the surface emitting laser is driven by manipulating the potentials or current values of these three electrodes.
Since the drive switch layer is formed so as to maintain the periodicity of the arrangement of the multilayer mirror layer on the front surface side, the reflectance of the multilayer mirror layer as the reflection layer does not decrease even if the drive switch layer is inserted. In addition, the output characteristics of the surface emitting laser can be improved as compared with the related art.

Further, since the drive switch layer is a part of the laser structure layer, the crystal growth is the same as that of a normal surface emitting laser and is simple. Further, since the drive voltage of the drive switch electrode and the drive voltage of the p-type electrode need only be a small change amount of about 1 V, high speed modulation is possible, power consumption is small, and the design of the drive circuit is easy.

Further, since a conductive (Si-doped) GaAs substrate can be used as a substrate for crystal growth of the laser structure layer, defects can be reduced and the yield can be improved.

In the above-described surface-emitting type semiconductor light-emitting device, the electrodes are the conductive substrate 10 and the multilayer mirror layer 24 on the front surface side.
Is formed on the p-type contact layer 26 and the drive switch contact layer 30 of the drive switch layer 28, so that a common electrode is formed on the conductive substrate 10 and the p-type contact layer 2 on the surface side is formed.
By applying a matrix wiring to 6 and the drive switch contact layer 30, a laser array can be formed, and each surface emitting laser of this laser array can be driven independently. Since such a matrix wiring is formed on the surface of the substrate having almost no unevenness, it can be easily formed and can be applied to a laser array arranged at a narrow pitch.

[0052] The structure of the second surface-emitting semiconductor light-emitting device according to an embodiment of the second embodiment following the present invention shown in FIG. The surface emitting semiconductor light emitting device according to the present embodiment is structurally different from the surface emitting semiconductor light emitting device according to the first embodiment in that the drive switch layer 2
8 is inserted below the active region 18 and the current confinement structure in the center of the surface emitting laser structure layer is formed by selectively oxidizing the AlGaAs layer.

As shown in FIG. 5, an n-type conductive substrate (n-type
On a GaAs substrate 10, an n-type buffer layer (n-type GaAs buffer layer) 12, an n-type multilayer mirror layer 14, a drive switch layer 28, a first spacer layer 16, an active region 18, and a second spacer layer 20, Al _0.98 Ga _0.02 As layer 50 (film thickness 65.4
nm) in this order. A p-type multilayer mirror layer 22 and a p-type contact layer 26 are stacked thereon by MOCVD. The configuration of each layer and the carrier concentration are the same as in the first embodiment. However, the drive switch layer 28 is the first
In this embodiment, the mirror is composed of an n-type multilayer mirror layer, but in this embodiment, it is composed of a 1.5-period multilayer mirror layer whose conductivity type is changed to p-type. The spacer layer 16 was doped n-type (carrier concentration 5 × 10 ¹⁷ / cm ³ ). With this configuration, the npn is formed below the active region 18 by the spacer layer 16, the drive switch layer 28, and the n-type multilayer mirror layer 14.
A semiconductor layer forming a junction transistor was formed.

Next, by photolithography, the drive switch layer 28 is removed by etching until it is exposed on the surface, thereby forming a convex shape having a diameter of 50 μm as shown in FIG. Thereafter, the drive switch layer 2 is again formed by MOCVD.
The p-type GaAs contact layer 29 is regrown on 8. This sample was heated to 400 ° C in a steam atmosphere to obtain Al _0.98 Ga
Oxidizing the _{0. 02} As layer 50, to form an aluminum oxide Al ₂ O ₃ 52 donut-shaped leaving a central portion (diameter 5 [mu] m).
Aluminum oxide has high insulation properties and does not pass current,
A current constriction structure in which a current flows only in the unoxidized central portion of the Al _0.98 Ga _0.02 As layer 50 is formed. The electrodes are
An n-type electrode 32 is provided on the n-type conductive substrate 10, a p-type electrode 34 is provided on the p-type contact layer 26, and p-type electrode 34 is provided on the drive switch layer 28.
A drive switch electrode 36 is formed on the type GaAs contact layer 29. A surface emitting semiconductor laser having such a configuration is
Manipulating the potentials of the three electrodes 32, 34, 36,
It can be driven by manipulating the value of the current flowing through each of these electrodes.

In this embodiment, the same effect as in the first embodiment can be obtained. Third Embodiment Next, a surface-emitting type semiconductor light-emitting element array according to a third embodiment of the present invention will be described with reference to FIGS. In the surface-emitting type semiconductor light-emitting element array according to the third embodiment, the surface-emitting type laser elements shown in FIG. 1 are arranged in a matrix, for example, in 12 rows × 1200 columns, and provided on a conductive GaAs substrate 10. The matrix electrode is used as a common electrode, matrix wiring is applied to the p-type electrode provided in the p-type contact layer and the drive switch electrode provided in the drive switch layer 28, and a predetermined voltage is applied to these three electrodes to emit light from each surface. It controls the driving of the individual type laser elements individually.

FIG. 6 shows an outline of a manufacturing process of the surface emitting semiconductor light emitting element array according to the third embodiment. FIG.
In (1) to (3), the upper diagram shows a plan view, and the lower diagram shows a cross-sectional view. The first shown in FIG.
A surface emitting laser structure layer, which is exactly the same as the surface emitting laser device which is the surface emitting semiconductor light emitting device according to the embodiment, is stacked on the conductive GaAs substrate 10 by MOCVD (FIG. 6A). . Here, as shown in FIG. 1, 14 is an n-type multilayer mirror, 22 and 24 are p-type multilayer mirrors, 26 is a p-type contact layer, and 28 is a drive switch layer.

Next, protons are injected in a vertical and horizontal lattice,
A proton injection region 40 is formed, and a length of 42
A surface emitting semiconductor light emitting element array in which surface emitting laser elements (surface emitting semiconductor light emitting elements) are arranged in 12 rows × 1200 columns at a pitch of μm is formed (FIG. 6 (2)). Next, similarly to the first embodiment (see FIG. 1), the p-type contact layer 26 and the p-type multilayer mirror layer 2 of each surface-emitting type laser device are formed.
4 is removed by etching, and the n-type drive switch layer 2 is removed.
Expose 8. An n-type drive switch contact layer 30 is regrown thereon. These p-type contact layers 26 and n
The p-type electrode 34, the drive switch electrode 36, and the n-type electrode 32 are formed on the back surface of the type drive switch contact layer 30 and the n-type GaAs substrate 10 as in the first embodiment. A drive switch wiring 60 in the row direction is formed for the drive switch electrode 36, and a Si ₃ N film having a thickness of 0.2 μm is formed on the wiring.
_{4 A} film 62 is deposited, and an anode wiring 64 is
Are formed so as to be connected to the p-type electrode 22 (FIG. 6 (3). In FIG. 6, the laser array of 12 rows × 1200 columns is rotated by 90 ° for easy understanding of the sectional view). Where 12
A laser array of rows x 1200 columns is divided into four parts vertically, horizontally and
A matrix wiring of the drive switch wiring 60 and the anode wiring 64 was formed using each of the 6 × 600 laser arrays as one block. Since the n-type electrode 32 is a common electrode, Ga
It is formed on the entire back surface of the As substrate 10. In this way, a 12-row × 1200-column laser array composed of a matrix-wired 6-row × 600-column laser array was prepared.

According to the surface-emitting type semiconductor light-emitting element array according to the third embodiment, the matrix wiring can be formed on the substrate surface having almost no unevenness, so that the matrix wiring is easy and the matrix wiring The density can be increased, and high-density integration of the surface-emitting type semiconductor light-emitting element can be achieved.

Further, since a conductive (Si-doped) GaAs substrate can be used as the substrate on which the crystal structure of the laser structure layer is grown, there is an effect that defects are reduced and the yield is improved. Since the surface-emitting type semiconductor light-emitting element can be formed at a high density and the yield can be increased, the cost can be reduced.

Further, in the conventional simple matrix wiring laser array, if the number of lasers connected to the wiring is large, the charge / discharge current to the parasitic capacitance of the wiring is large and the power consumption is large. However, the present invention has solved the problem that the rectangularity of the drive current waveform is poor due to the large parasitic capacitance. That is, since the voltage change at each electrode during driving is small, the power consumption due to the parasitic capacitance of the wiring is reduced, and at the same time, a pulse current with good rectangularity can flow into the laser active region. In addition, polyimide, silicon oxide film, silicon nitride film, etc. are used for embedding deep irregularities in the matrix wiring of conventional surface-emitting lasers, but residual stress caused by this reduces the reliability of the laser. On the other hand, when the present invention is used, the surface unevenness is small and the thickness of the buried layer is small, so that there is also an effect that problems such as a decrease in reliability due to residual stress do not occur.

Next, the pulse operation characteristics of the laser array 70 in which the laser elements are arranged in 12 rows × 1200 columns and an image forming apparatus using the laser array 70 as a light source will be described.

Since the laser array 70 in which laser elements are arranged in 12 rows × 1200 columns is a set of four laser arrays in which laser elements are arranged in 6 rows × 600 columns, the laser elements are arranged in 6 rows × 600 columns. The pulse operation of the laser array will be described with reference to the drive sequence of FIG. Here, the potential of the electrode shown in FIG.
It will be driven with the shifted setting. That is, the cathode electrode which is a common electrode of the laser array 70 is set to -8.5 V,
Anode wiring 64 with matrix wiring and drive switch wiring 6
The potential of 0 is set to 0V. A pulse voltage of -0.5 V is applied to the drive switch wiring 60 of the laser row to be driven, and a pulse voltage of +1.5 V is applied to the anode wiring 64 of the laser to be subsequently emitted, so that a desired laser element emits light. In the laser array, the array position of the laser element at x row and y column is (x,
y), the array position is (6,60) by the above method.
The simulation for driving the laser element of 0) was performed. FIG. 8 shows the result. Sequence position is (6,600)
Although a rectangular current flows in the active region of the laser element,
It was confirmed that current did not flow in the active region of the laser element whose array position was not driven and was at (3,600), and that only the desired laser element could be driven.

An example of a method for driving the entire laser array 70 is shown in the time chart of FIG. First, a pulse voltage of −0.5 V and a pulse width of 1.2 μs is applied to the drive switch wiring 60-1 in the first row, and the potentials of the drive switch wirings 60-2 to 60-12 in the second to twelfth rows are set to 0. Set to. Next, the anode wiring 64-i (i is 1
A pulse voltage of +1.5 V and a pulse width of 1.0 μs is applied only to an integer of ~ 1200. Only the laser element at the intersection of the potential of the drive switch wiring of -0.5 V and the potential of the anode wiring 64-i of +1.5 V satisfies the driving conditions shown in FIG. 4 and emits light. That is, only the desired laser in the first row can emit light. Next, after the potential of the drive switch wiring 60-1 becomes 0V, a pulse voltage of -0.5V and a pulse width of 1.2 [mu] s is applied to the drive switch wiring 60-2 in the second row. As in the case of the first row, only +1.5 V,
When a pulse voltage having a pulse width of 1.0 μs is applied, only a desired laser element emits light.

In this manner, the desired laser elements in the third, fourth,..., Twelfth rows can emit light sequentially.

Next, an image forming apparatus using the laser array 70 as a light source will be described with reference to FIG. In the figure, an image forming apparatus includes a laser array 70 as a light source.
, Lens system 72, photosensitive drum 74, reflection mirror 7
6. In such a configuration, laser light emitted from the laser array 70 as a light source is condensed and imaged by the lens system 72, and the light emission pattern of the laser array 70 is projected on the surface of the photosensitive drum 74. In the present embodiment, the photosensitive drum 74 is moved from the position where the laser array 70 is disposed.
The reflection mirror 76 is inserted in the optical path in order to shorten the distance to the arrangement position.

Further, in this embodiment, the laser array 70
Is slightly rotated in the plane of arrangement of the light emitting points, so that a projection point array 12 × 120 projected on the surface of the photosensitive drum 74 is provided.
The projection points arrayed on the main scanning line of 0 are arranged at equal intervals.
A sequence of 00 points was used.

Thus, by rotating the photosensitive drum 74, it is possible to form an image having a resolution of 14,400 spots in the width of the photosensitive drum. Although omitted in FIG. 10, the image forming apparatus additionally includes a charging corotron, a developing device,
It is equipped with a transfer corotron, a fixing device, a cleaning device, and the like. In addition, a signal processor or a laser array driver is used for driving the laser array. Further, according to the image forming apparatus according to the present embodiment, since the high-density integrated surface-emitting type semiconductor light-emitting element array is used as a light source, the pixel pitch can be reduced.
A high-resolution image can be formed by sequentially emitting light from the laser array using the above-described driving sequence (FIG. 9).

Fourth Embodiment A surface emitting semiconductor light emitting element array according to a fourth embodiment of the present invention will be described with reference to FIGS. The surface-emitting type semiconductor light-emitting element array according to the present embodiment includes the surface-emitting type semiconductor light-emitting element (selective oxidation type surface-emitting laser element) according to the second embodiment in 12 rows × 120.
They are arranged in 0 columns.

When manufacturing a laser array, the first
As described in the second embodiment (FIG. 1), the drive switch layer 28 is inserted near the surface of the p-type multilayer mirror layer 22 in the vicinity of the drive as described in the second embodiment (FIG. 5). This is more advantageous than inserting the switch layer 28 at the end of the n-type multilayer mirror layer 14. This is because it is easier to form the matrix wiring near the surface of the laser structure layer.

Next, FIG. 11 schematically shows a manufacturing process of the surface emitting type semiconductor light emitting element array 80 according to the present embodiment, and FIG. 12 shows a sectional structure of each surface emitting type laser element. As shown in FIG. 11A, each laser structure of the surface-emitting type semiconductor light-emitting element array is formed by etching each layer formed on the conductive n-type GaAs substrate 10 to have a convex shape. That is, FIG.
As shown in the figure, n is placed on a conductive n-type GaAs substrate 10.
-Type GaAs buffer layer 12, n-type multilayer mirror layer 1
4, spacer layer 16, active region 18, spacer layer 20,
An Al _0.98 Ga _0.02 As layer 50, a p-type multilayer mirror layer 22, a drive switch layer 28, a p-type multilayer mirror layer 24, and a p-type contact layer 26 are grown in this order. Drive switch layer 28
Is exposed on the surface by etching, and the n-type drive switch contact layer 30 is regrown thereon. Next, the convex shape of the laser element is formed by etching.

Next, as shown in FIG. 11 (2), Al _0.98 Ga
_{The 0.02} As layer 50 is oxidized to produce a donut-shaped aluminum oxide Al ₂ O ₃ 52.

Further, the surface of the laser array which has become convex by etching is buried with polyimide 84 and flattened (FIG. 11 (3)). Then, a drive switch wiring 86 is formed, and an insulating film Si ₃ N ₄ 88 is formed to cover this. A p-type electrode wiring 90 is formed in a direction perpendicular to the drive switch wiring 86, and a matrix wiring is laid. A common electrode 92 is formed on the back surface of the n-type GaAs substrate 10.
(4)).

By applying a predetermined voltage to the three electrodes (or wires) 86, 90, and 92 thus formed, the laser array 80 in which laser elements are arranged in 12 rows × 1200 columns is driven. Can be. A driving method similar to that of the third embodiment can be used as a light source of the image forming apparatus. Although this image forming apparatus is of an electrophotographic type, it is needless to say that the image forming apparatus can be used as a light source for other printing methods such as direct printing.

Fifth Embodiment An image display device according to a fifth embodiment of the present invention will be described. Prior to the description of the image display device, first, a laser element for emitting red light having a wavelength of 650 nm used as a light source of the image display device is arranged in 12 rows × 120 columns.
An lGaInP-based laser array will be described.

Each surface-emitting laser constituting this laser array
The laser structure layer of the laser element as red light
(Wavelength 680 nm)
The region is made of an AlGaInP-based material, and the multilayer mirror layer is made of AlGaInP.
It was formed of an As-based material. Its structure is specifically conductive
an n-type GaAs buffer layer on an n-type GaAs substrate;
n-type AlAs / Al_0.5Ga_0.5As Multilayer mirror layer, non-doped Al
InP spacer layer, GaInP / AlGaInP triple quantum well active area
Region, undoped AlInP spacer layer, p-type AlAs / Al_{0. Five}Ga
_0.5As multilayer mirror layer, n-type Al_0.5Ga_0.5As / AlAs / Al_0.5G
a_0.5As drive switch layer, p-type AlAs / Al_0.5Ga_0.5As multilayer
A film mirror layer and a p-type GaAs contact layer were laminated in this order.
Structure. This laser structure layer uses some materials,
Although different, the above-mentioned laser has a structure basically similar to that of FIG.
Thickness t of each layer of the multilayer mirror layer in the laser structure layer
_iIs for light of laser wavelength λ (here 780 nm)
And t_i= Λ / (4 · n_i)
(N_iIs the refractive index of each layer), and a high reflectance is achieved.
Further, each layer of the spacer layer and the active region has a thickness t of each layer._i
Is the refractive index n_iMultiplied by t_i× n _iIs equal to λ
It is set to be easy to use and plays a role as a laser resonator.
Play.

A laser array in which laser elements are arranged in 12 rows × 120 columns is formed on the substrate having such a laser structure layer by proton implantation in the same manner as in the laser array according to the third embodiment. Further, similarly to the third embodiment, a common electrode is formed on the back surface of the GaAs substrate, and a matrix wiring is laid on the p-type electrode and the drive switch electrode, so that the potentials and currents of these three electrodes are changed. , The laser array 100 of 12 rows × 120 columns can be driven.

FIG. 13 shows the configuration of an image display device using the laser array 100 as a light source. In FIG. 1, the image display device has a laser array 100 as a light source, lens systems 102 and 104, reflection mirrors 106 and 108, a polygon mirror 110, and a screen 112.

In the above configuration, the laser beam 114 emitted from the laser array 100 of 12 rows × 120 columns is
02 and the reflecting mirror 106 form an image once on the mirror surface of the polygon mirror 110. Next, the polygon mirror 110
Is reflected from the back surface by a lens system 104 and a reflection mirror 108 onto a screen 112 for image display. Here, in the light emitting point array projected on the screen 112, the laser array 100 is slightly inclined so that the projected point array of the light emitting point array in the main scanning direction (horizontal direction) is arranged at equal intervals. As a result, the resolution in the main scanning direction becomes 1440 spots, and the image display device can display a high-definition image.

The polygon mirror 110 has three surfaces,
If the rotation speed is 10 rotations / second (600 rotations / minute), a moving image of 30 frames / second can be formed. The vertical resolution on the screen 112 is the third
If the drive sequence described in the embodiment is used, 1
More than 200 spots can be easily realized.

In this embodiment, since only the red laser array is used, only red display can be performed, but it goes without saying that full-color display can be performed by using the blue and green laser arrays.

[0081]

As described above, according to the surface-emitting type semiconductor light-emitting device according to the present invention, the inside or below the multilayer mirror layer (reflection layer) on the front side constituting the surface-emitting type laser device. By inserting a third-layer multilayer mirror layer (drive switch layer) having a different conductivity type as a third layer on the side, a switching element, for example, a pnp junction forming a transistor or a pnp junction forming a transistor on the surface side forming the surface emitting laser np
A surface-emitting type is formed by forming an n-junction semiconductor layer, further forming electrodes on a conductive substrate, a multilayer mirror tank on the front side, and a drive switch layer, and manipulating potentials or current values of these three electrodes. In addition to driving the laser, the drive switch layer is formed so as to maintain the periodicity of the arrangement of the multilayer mirror layer on the front surface side. The output characteristics of the surface-emitting type laser can be improved as compared with the related art without lowering the efficiency.

According to the surface-emitting type semiconductor light-emitting element array according to the present invention, a common electrode is formed on the conductive substrate among the electrodes of each surface-emitting type semiconductor light-emitting element, and the multilayer mirror layer and the drive switch layer on the front side are formed. Since the matrix wiring is formed, the unevenness on the surface is small, the formation of the matrix wiring is easy, and the high integration of the laser element is possible.

In the image forming apparatus according to the present invention, since the high-density integrated surface emitting semiconductor light emitting element array according to the present invention is used as a light source, the pixel pitch can be reduced and a high-resolution image can be formed. can do.

In the image display device according to the present invention, since the high-density integrated surface-emitting type semiconductor light emitting device array according to the present invention is used as a light source, the pixel pitch can be reduced, so that a high-resolution image can be displayed. Can be displayed.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a sectional structure of a surface emitting semiconductor light emitting device according to a first embodiment of the present invention.

FIG. 2 is an energy band structure diagram showing the operation principle of the surface emitting semiconductor light emitting device according to the first embodiment of the present invention.

FIG. 3 is a circuit diagram showing an equivalent circuit of the surface-emitting type semiconductor light emitting device shown in FIG.

FIG. 4 is a voltage-current characteristic diagram showing a relationship between a drive switch electrode potential and a current flowing through each part in the surface-emitting type semiconductor light emitting device shown in FIG.

FIG. 5 is a sectional view showing a sectional structure of a surface emitting semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 6 is a process chart showing a manufacturing process of a surface-emitting type semiconductor light-emitting element array according to a third embodiment of the present invention.

FIG. 7 is an explanatory diagram showing a drive sequence of a surface-emitting type semiconductor light-emitting element array according to a third embodiment of the present invention.

FIG. 8 is a pulse current waveform diagram showing a driving simulation result of the surface emitting semiconductor light emitting element array according to the third embodiment of the present invention.

FIG. 9 is a timing chart showing a driving sequence when driving the entire surface emitting semiconductor light emitting element array according to the third embodiment of the present invention.

FIG. 10 is a configuration diagram showing a schematic configuration of an image forming apparatus using a surface-emitting type semiconductor light-emitting element array according to a third embodiment of the present invention as a light source.

FIG. 11 is a process chart showing a manufacturing process of a surface-emitting type semiconductor light-emitting element array according to a fourth embodiment of the present invention.

FIG. 12 is a cross-sectional view illustrating a cross-sectional structure of each surface-emitting type laser element of a surface-emitting type semiconductor light-emitting element array according to a fourth embodiment of the present invention.

FIG. 13 is a configuration diagram showing a schematic configuration of an image display device according to a fifth embodiment of the present invention.

FIG. 14 is a sectional view showing a part of a sectional structure of a conventional surface emitting laser array.

FIG. 15 is a cross-sectional view showing a cross-sectional structure of a conventional surface emitting laser array on which transistors are mounted.

[Explanation of symbols]

Reference Signs List 10 n-type GaAs substrate 12 n-type GaAs buffer layer 14 n-type multilayer mirror layer (first multilayer mirror layer) 16 spacer layer (first spacer layer) 18 active region 20 spacer layer (second spacer layer) 22, 24 p-type multilayer mirror layer (second multilayer mirror layer) 26 p-type contact layer 28 drive switch layer (third layer) 30 drive switch contact layer 32 n-type electrode 34 p-type electrode 36 drive switch electrode

Claims (8)

[Claims] 1. A first multilayer mirror layer, a first spacer layer, an active region, a second spacer layer, and a second multilayer mirror layer are arranged on a semiconductor substrate in this order. In the surface-emitting type semiconductor light-emitting device, a layer inserted into any one of the layers except for the active region and a third layer having a different conductivity type are inserted into the light-emitting device. 3. A surface-emitting type semiconductor light-emitting device, wherein a semiconductor layer constituting a switching element comprising three layers is formed. A first multilayer mirror layer, a first spacer layer, an active region, a second spacer layer, and a second multilayer mirror layer are arranged on the semiconductor substrate in this order; At least one of the first multilayer mirror layer and the first spacer layer has a first conductivity type, and the second spacer layer and the second spacer layer have a second conductivity type.
At least one of the multilayer mirror layers is a surface-emitting type semiconductor light-emitting device having a second conductivity type opposite to the first conductivity type, wherein a second conductivity type layer is provided inside or at an end of the layer having the first conductivity type. The semiconductor layer forming the switching element is inserted by inserting a third layer of the conductivity type or by inserting a third layer of the first conductivity type inside or at the end of the layer having the second conductivity type. A first electrode formed on a layer having a first conductivity type below the third layer and a second electrode formed on a layer having a second conductivity type above the third layer. Light emission can be controlled by driving a second electrode and a third electrode formed on the third layer or a contact layer formed on the third layer. Surface emitting type semiconductor light emitting device. 3. A first multilayer mirror layer, a first spacer layer, an active region, a second spacer layer, and a second multilayer mirror layer are formed on a conductive semiconductor substrate in this order. The conductive semiconductor substrate and the first multilayer mirror layer are disposed and have the first conductivity type, and at least one of the second spacer layer and the second multilayer mirror layer has the first conductivity type. In a surface-emitting type semiconductor light emitting device having an opposite second conductivity type, a second conductivity type having a second conductivity type inside or at an end of a first multilayer mirror layer having a first conductivity type. A switching element is formed by inserting a third layer or by inserting a third layer of the first conductivity type inside or at the end of a second multilayer mirror layer having the second conductivity type. A first electrode formed on the conductive substrate and a first electrode formed above the third layer. A second electrode formed on the layer of the conductivity type,
A surface-emitting type semiconductor light-emitting device, wherein light emission can be controlled by driving a third layer or a third electrode formed on a contact layer formed on the third layer. Wherein said first, second multilayer mirror layer, each layer a thickness of _{λ / (4 · n i)} (λ is the wavelength of light emitted from the active layer, n _i is the respective layers The first spacer layer, the second spacer layer, and the active region have a value t _i · n _{i obtained} by multiplying the thickness t _i of each layer by the refractive index n _i of each layer. The third layer is formed so as to maintain the above-mentioned configuration of a layer in a portion where the third layer is inserted. 4. The surface emitting semiconductor light emitting device according to any one of 1 to 3. 5. The third layer is inserted into or inside the first multilayer mirror layer or the second multilayer mirror layer, and the third layer is inserted with the third layer. 5. The surface-emitting type semiconductor light-emitting device according to claim 4, wherein the surface-emitting type semiconductor light-emitting device is formed so as to maintain the periodicity of the configuration of the multilayer mirror layer. 6. The surface emitting semiconductor light emitting device according to claim 2, wherein the surface emitting semiconductor light emitting device is arranged two-dimensionally, and one of the first electrode and the second electrode is a common electrode. And forming a matrix wiring for the other of the first electrode or the second electrode and the third electrode,
A surface-emitting type semiconductor light-emitting element array, wherein individual surface-emitting type semiconductor light-emitting elements can be driven by these three electrodes. 7. An image forming apparatus which uses the surface-emitting type semiconductor element array according to claim 6 as a light source, and prints an image using light emitted from the light source. 8. A still image or a moving image is displayed by using the surface-emitting type semiconductor light-emitting element array according to claim 6 as a light source and irradiating light emitted from the light source to a display surface using an optical system. An image display device characterized by the above-mentioned.