JPH1117084A - Power semiconductor device and power controller using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power semiconductor device and a controller used in the semiconductor device, which can reduce the thermal and electromagnetic influences of the power semiconductor device on a control substrate. SOLUTION: A power semiconductor device 10 includes a thermally conductive substrate 1 having power semiconductor elements 2 mounted on its one surface 1a, and a metallic casing 3 mounted on the surface 1a of the substrate 1 as to cover the power semiconductor elements 2. A heat sink 7 is provided in an area of the surface 1a of the substrate 1 on the side of the easing 3 but not provided with the casing 3. Further, the semiconductor device 10 having radiating members is provided as spaced from a control box of a power controller, and cooling fins are provided as to face the radiating members with a spacing therefrom.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor device and a power control device using the power semiconductor device, and more particularly to a power semiconductor device for controlling power from a large output power supply and a power control device.

[0002]

2. Description of the Related Art There is an inverter for driving a motor as a power control device for controlling power from a large power supply. FIGS. 4 and 5 show an example of the inverter. This inverter 50 is, as shown in FIG.
A control board 60 including a CPU and the like for controlling the apparatus;
And a power semiconductor device 70 that performs power switching according to the control of the control board 60. The inverter 50 is provided with a smoothing circuit (not shown) and a rectifying circuit (not shown).

The inverter 50 is provided with a heat sink 52 having a plurality of plate members 53 arranged below the housing 51 in order to dissipate heat generated by the control board 60 and the power semiconductor device 70. I have.

[0004] As shown in FIG. 4, the power semiconductor device 70 comprises an aluminum base plate 71 having an insulating layer formed on its surface, and an epoxy resin case 72 covering the upper side of the base plate 71. Are formed.

In this embodiment, a substrate 73 made of a Cu block is mounted on the upper surface of the base plate 71, and a power semiconductor element (eg, IGBT element, FwDi element) 74 for switching current is mounted on the substrate 73. Is placed. Further, on the base plate 71, in addition to the power semiconductor elements 74, an IC 75, a resistor 76, a capacitor 77 and the like are arranged. The power semiconductor element 7
4, the IC 75, the resistor 76, and the capacitor 77 are wired by a bonding wire (aluminum wire) 78 or a bus bar (not shown) to form a predetermined circuit. The case 72 of the power semiconductor device 70
A terminal group 79 including a control terminal, a drive power supply terminal, and an output terminal is provided on the upper surface of the device.

The case of the power semiconductor device 70 is filled and sealed with a silicone resin gel 80 and an epoxy resin 81 to protect elements and wiring in the device from the external environment, shock and vibration. I have.

As shown in FIG. 5, the base plate 71 of the power semiconductor device 70 is directly attached to a heat sink 52 below the housing 51 of the inverter 50, and the heat generated by the power semiconductor device 70 is The heat is dissipated from

[0008]

The above-described conventional power control device 50 has the following problems. That is, although the power device 50 is cooled by the heat sink 52, the temperature inside the housing 51 increases due to the heat generated by the power semiconductor device 70. For this reason, it is necessary to use an element constituting the control board 60 that operates stably even in a high temperature range, which increases the cost.

Further, since the control board 60 and the power semiconductor device 70 are arranged in the same housing 51, the control board 60 and the power semiconductor device 70 must be arranged relatively close to each other. There is a possibility that the switching noise of the power semiconductor device 70 may affect the power supply. For this reason,
The shield of the control board 60 must be strict.

Accordingly, an object of the present invention is to provide a power semiconductor device capable of reducing the thermal and electromagnetic effects exerted on a control substrate by the power semiconductor device, and a power control device using the power semiconductor device. And

[0011]

Means for solving the above problems in the present invention are as follows.

According to the first aspect of the present invention, there is provided a power semiconductor element 2, a thermally conductive substrate 1 on which the power semiconductor element 2 is disposed on one surface 1a, and the substrate covering the power semiconductor element 2. Surface 1a to which the above-mentioned housing 3 is attached
And the casing 3 attached to the substrate 3. The casing 3 of one surface 1a of the substrate 1 on which the casing 3 is attached.
Is a power semiconductor device 10 in which a heat sink 7 is formed in a region where no heat sink is attached.

According to a second aspect of the present invention, there is provided a power semiconductor device in which the housing 3 of the first aspect is made of metal.

According to a third aspect of the present invention, there is provided a control terminal 4 to which a signal for controlling the power semiconductor device 10 according to the first or second aspect is supplied, and a driving power supply terminal to which driving power of the power semiconductor device 10 is supplied. 5, and power semiconductor device 1
And an output terminal 6 for transmitting an output signal of “0”.
And a power supply terminal 5 projecting from the other surface 1b of the substrate 1 and an output terminal 6 disposed on the surface of the housing 3.

According to a fourth aspect of the present invention, there is provided the power semiconductor device according to the first, second or third aspect,
A control box 21 storing a control device 30 for outputting a control signal to the power semiconductor device 10, wherein the one surface 1 a of the substrate 1 of the power semiconductor device 10 is directed toward the control box 21 and the power semiconductor device 10 This is a power control device 20 in which the power semiconductor device 10 and the control box 21 are coupled via a spacer 27 so that a gap 24 is provided between the power semiconductor device 10 and the control box 21.

According to a fifth aspect of the present invention, a heat radiating member 23 is attached to the substrate 1 of the power semiconductor device 10 according to the fourth aspect of the present invention, and the heat radiating member 23 is attached to the substrate 1 of the power semiconductor device 10. And a heat radiating means provided in a region where the power semiconductor device 10 is not mounted. The heat radiating means can be constituted by the plate-like member 26.

According to a sixth aspect of the present invention, a cooling fin 22 is provided on a base 25 facing the gap 24 of the heat radiating member 23 of the fourth or fifth aspect.

The means of claim 7 uses the power semiconductor device 10 of claim 3 in the means of claim 4, 5, or 6, and connects the control terminal 4 and the drive power supply terminal 5 to each other. Is inserted into the control box 21 and connected to the control device 30.

(Operation) According to the power semiconductor device 10 of the first aspect, since the heat sink 7 is provided directly on the substrate 1 on which the power semiconductor element 2 is mounted, the heat generated by the power semiconductor 2 is 1 to the heat sink 7 and radiated from the heat sink 7.

According to the power semiconductor device 10 of the present invention, since the housing 3 is made of metal and attached to the substrate 1, the heat generated by the power semiconductor element 2 is transferred from the substrate 1 to the metal housing. The heat is transmitted to the body 3 and is radiated from the housing 3. Switching noise generated in the housing 3 is shielded by the metal housing 3.

According to the power semiconductor device 10 of the third aspect, the control terminal 4 and the drive power supply terminal 5 are provided so as to protrude from the other surface 1b of the substrate 1, and the output terminal 6 is provided on the surface of the housing 3. The control terminal 4 and the drive power supply terminal 5
The electrical connection to the output terminal 6 can be made on the lower side of the board 1, and the connection of the cable to the output terminal 6 can be made on the upper side of the board 1.

According to the power control device 20 of the fourth aspect, since the power semiconductor device 10 and the control box 21 storing the control device 30 are connected to each other with the gaps 24 provided using the spacers 27, The heat of the power semiconductor device 10 is not easily transmitted to the control box 21. Further, since the power semiconductor device 10 and the control device 30 can be arranged apart from each other, it becomes difficult for the switching noise of the power semiconductor device 10 to be transmitted to the control device 30.

According to the power control device of the fifth aspect, the heat radiating member is provided on the substrate of the power semiconductor device.
3, the heat of the power semiconductor device 10 is transmitted from the substrate 1 to the heat radiating member 23,
Radiated at The switching noise of the power semiconductor device 10 is shielded by the heat radiating member 23.

According to the power control device 20 of the sixth aspect, since the cooling fins 22 are provided in the heat radiating member 23 so as to face the gap 24 with the control box 21, the surface area of the heat radiating member 23 increases.

According to the power control device 20 of the present invention, the control terminal 4 and the drive power supply terminal 5 are connected to the control box 21.
The control terminal 4 and the drive power supply terminal 5 can be connected to the control device 30 in the control box 21 because the control device 30 is connected to the control device 30.

[0026]

Embodiments of a power semiconductor device and a power control device according to the present invention will be described below with reference to the drawings. 1 and 2 show a power semiconductor device 10 according to the present embodiment, and FIG. 3 shows a power control device 20 according to the present embodiment.

[Description of Power Semiconductor Device] (Configuration) FIGS. 1 and 2 show a power semiconductor device 10 according to an embodiment. As shown in FIGS. 1 and 2, the power semiconductor device 10 according to the present embodiment includes the same power semiconductor element 2 as the conventional one.

The substrate 1 is made of aluminum and has thermal conductivity. A power semiconductor element 2 composed of a silicon chip is mounted on one surface 1a of the substrate 1 via an electrical insulator, and heat from the power semiconductor element 2 is directly transmitted to the substrate 1.

The power semiconductor element 2 is mounted on one surface 1a of the substrate 1 and is covered with an aluminum casing 3. The substrate 1 is a rectangular plate-like member larger than a size necessary for mounting the housing 3. That is, as shown in FIG.
And the width dimension W is larger than the width dimension w of the housing 3. The housing 3 is arranged along one side of the substrate 1. Therefore, a part of the substrate 1 projects laterally from the lower part of the housing 3.

In the present embodiment, a heat sink 7 is formed on one surface 1a of the substrate 1 where the housing 3 is not attached, that is, on the surface of the portion protruding from the housing 3. The heat sink 7 is configured such that a plurality of rectangular plate members 8 made of aluminum are erected in parallel at intervals.

A control terminal 4 to which a signal for controlling the power semiconductor device 10 is input and a drive power supply terminal 5 to which drive power to the power semiconductor element 2 is supplied are provided on the other surface 1b of the substrate 1, that is, a semiconductor. It protrudes from the back surface of the surface to which the element 2 is attached. Further, an output terminal 6 from which power from the power semiconductor element 2 is transmitted is provided above the surface of the housing 3. Further, the control terminal 4 and the drive power supply terminal 5 protruding from the other surface 1b of the substrate 1 are covered with epoxy resin on the substrate 1 side, so that terminal bases 14 and 15 are formed.

(Operation and Effect) According to the power semiconductor device 10 of the present embodiment, the heat sink 7 is formed on the surface of the portion of the substrate 1 protruding from the housing 3, so that the power semiconductor element 2 is generated. The heat can be dissipated from the heat sink 7 via the substrate 1 and the power semiconductor device 10 can be cooled well.

Further, according to the power semiconductor device 10 of the present embodiment, since the housing 3 is formed of aluminum, the cooling efficiency of the power semiconductor device 10 can be improved by radiating heat from the housing 3. . Further, the switching noise generated by the power semiconductor element 2 is shielded by the aluminum housing 3, and the noise generated from the power semiconductor device 10 is reduced.

According to the power semiconductor device 10, since the control terminal 4 and the drive power supply terminal 5 project downward from the substrate 1, they are connected to another device, for example, a control box containing a control device. In configuring the power control device, etc.
When the power semiconductor device 10 is mounted on the control box in which the control device is stored, the control terminal 4 and the drive power supply terminal 5
Can be inserted, and both terminals 4 and 5 can be connected to the device in the control box in the control box, and the connection line is not exposed to the outside. Further, when the power semiconductor device 10 and the control device are mounted on a control box in which the control device is stored, the output terminal 6 is not hidden inside other members, and the power cable can be directly connected to the output terminal 6 provided on the upper surface of the housing 3. In addition, the number of parts and the number of assembly steps can be reduced.

In the above embodiment, the heat sink has been described as having the plate-shaped members arranged in parallel. However, the present invention is not limited to this, and can be changed as needed. Also,
The mounting position of the housing on the substrate can also be changed as appropriate, such as at the center of the substrate. In addition, the substrate is not limited to an aluminum substrate, and may be appropriately changed as long as the substrate has good thermal conductivity.

[Power Control Apparatus] (Configuration) FIG. 3 shows an embodiment of the power control apparatus according to the present embodiment. The power control device 20 according to the present example is an inverter for motor control as in the example shown as the conventional example.

The inverter 20 of the present embodiment comprises the above-described power semiconductor device 10, a control device 30, a control box 21 containing a smoothing circuit (not shown) and a rectifier circuit (not shown). Have been.

The control box 21 is a rectangular parallelepiped box, and an insertion hole (not shown) for inserting the control terminal 4 and the drive power supply terminal 5 of the power semiconductor device 10 on a mounting surface on which the power semiconductor device 10 is mounted. Has been established.

The power semiconductor device 10 is mounted on the control box 21 with the other surface 1 b of the substrate 1 facing the control box 21. In this example, as shown in FIG. 2, a heat radiating member 23 is attached to the substrate 1 of the power semiconductor device 10, and the power semiconductor device 10 is attached to the control box 21 via the heat radiating member 23.

The heat dissipating member 23 is made of aluminum.
And a base 25 to which the power semiconductor device 10 is attached, as shown in FIG. This base 25
The rectangular shape is larger than the substrate 1 of the power semiconductor device 10 and has substantially the same shape as the mounting surface of the control box 21. The power semiconductor device 1 is provided on the base 25.
0 is attached. An insertion hole for the control terminal 4 and the drive power supply terminal 5 is formed in the base 25 where the power semiconductor device 10 is mounted, and the control terminal 4 and the drive power supply terminal 5 project from the base 25.

The heat dissipating member 23 is provided with a plate-like member 26 as a heat dissipating means in a region of the base 25 on the mounting side 25a of the power semiconductor device 10 where the power semiconductor device 10 is not mounted.

A spacer 27 is provided between the heat radiating member 23 and the control box 21 along two opposing sides, and the heat radiating member 23 to which the power semiconductor device 10 is attached is provided.
The control box 21 is connected to the control box 21 with a gap 24 therebetween. Preferably, the spacer 27 is a heat insulating material.

The control terminal 4 and the drive power supply terminal 5 of the power semiconductor device 10 are inserted into the control box 21 through the insertion holes of the control box 21, and are electrically connected to the control device 30.

In this embodiment, the gap 24 of the base 25 is
A plurality of cooling fins 22 are provided in parallel from the other surface 25b facing each other.

(Operation and Effect) According to the power control device 20 according to the present embodiment, a gap is provided between the control box 21 in which the control device 30 and the like are stored and the power semiconductor device 10.
The heat of the power semiconductor device 10 is not directly transmitted to the control box 21, so that the temperature of the control device in the control box 21 does not easily rise.

Further, according to the present embodiment, the heat radiating member 23 is attached to the power semiconductor device 10 and the cooling fin 22 is provided on the heat radiating member 23 so as to face the gap 24.
The power semiconductor device 10 can be cooled well, and the thermal effect on the control device in the control box 21 can be reduced.

The control box 21 and the power semiconductor device 10
And the power semiconductor device 10
In addition, the distance between the power semiconductor device 10 and the control device 30 can be increased, so that the switching noise of the power semiconductor device 10 is not easily transmitted to the control device.

Further, the substrate 1 of the power semiconductor device 10
Since the housing 3 is made of aluminum, the switching noise is cut off by the substrate 1 and the housing 3 to prevent the switching noise from being transmitted to the control device. Since the power semiconductor device 10 is provided with the heat radiating member 23, the switching noise is shielded by the heat radiating member 23, and the shielding performance is further improved.

In the above embodiment, the power semiconductor device is attached to the heat radiating member. However, the heat radiating member is not necessarily used, and the power semiconductor device may be attached with a gap provided above the power control device. Good. Although a plate-like member is used as the heat radiating means, it may have any configuration as long as cooling can be performed. Further, the shape of the cooling fin of the heat radiating member can be appropriately changed, and the cooling fin need not be provided.

[0050]

As described above, according to the present invention,
The heat dissipation provided by the heat sink provided on the substrate and the metal housing allow the power semiconductor device to be cooled efficiently, so that the temperature rise of the power semiconductor device is suppressed. Since a gap is formed between the power semiconductor devices, the heat of the power semiconductor device can be hardly transmitted directly to the control box of the power control device. For this reason, the temperature in the control device control box of the power control device does not increase, and a semiconductor device such as a control device having a low operating temperature range can be used, which has the effect of reducing costs.

Further, according to the present invention, noise leakage from the power semiconductor device can be reduced by the metal housing.
Furthermore, since the distance between the power semiconductor device and the control device of the power semiconductor device can be increased, the switching noise of the power semiconductor device is less likely to be transmitted to the control device, and the electromagnetic effect on the control device is reduced, thereby reducing the operation of the control device. This has the effect of ensuring reliability.

In the power semiconductor device provided with the heat radiating member, the power semiconductor device is further cooled well, and the switching noise is shielded by the heat radiating member, so that the switching noise is hardly transmitted to the control device. It has the effect of becoming. In the case where the cooling fin is provided on the heat radiating member, the cooling effect is further improved.

[Brief description of the drawings]

FIG. 1 is a perspective view from below showing a power semiconductor device according to an embodiment of the present invention.

FIG. 2 is a top perspective view showing the power semiconductor device according to the embodiment of the present invention together with cooling means.

FIG. 3 is a perspective view showing a power control device according to the embodiment of the present invention.

FIG. 4 is a sectional view showing a conventional power semiconductor device.

FIG. 5 is a perspective view showing a conventional power control device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Power semiconductor element 3 Housing 4 Control terminal 5 Driving power supply terminal 6 Output terminal 7 Heat sink 10 Power semiconductor device 20 Power control device 21 Control box 22 Cooling fin 23 Heat radiating member 24 Gap 25 Base 26 Plate member

Claims (7)

[Claims] 1. A power semiconductor device comprising: a power semiconductor device; a thermally conductive substrate on which the power semiconductor device is disposed on one surface; and a housing covering the power semiconductor device and mounted on one surface of the substrate; A power semiconductor device wherein a heat sink is formed in a region of the substrate on which the housing is not mounted on one surface of the substrate to which the housing is mounted. 2. The power semiconductor device according to claim 1, wherein the housing is made of metal. A control terminal to which a signal for controlling the power semiconductor device is supplied, a drive power supply terminal to which drive power of the power semiconductor device is supplied, and an output terminal to send out an output signal of the power semiconductor device; The power semiconductor device according to claim 1, wherein a drive power terminal protrudes from the other surface of the substrate, and the output terminal is disposed on a surface of the housing. 4. A power semiconductor device comprising: the power semiconductor device according to claim 1, 2 or 3; and a control box storing a control device for outputting a control signal to the power semiconductor device. A power control device, wherein the one surface of the substrate is directed to the control box side and the power semiconductor element and the control box are connected via a spacer so as to provide a gap between the power semiconductor element and the control box. 5. A heat radiating member is attached to the substrate of the power semiconductor device. The heat radiating member is provided on a base attached to the substrate of the power semiconductor device, and a heat radiating means provided in a region where the power semiconductor device is not attached. The power control device according to claim 4, comprising: 6. The power control device according to claim 5, wherein a cooling fin is provided on the other surface of the base of the heat radiation member facing the gap. 7. The power semiconductor device according to claim 3, wherein a control terminal and a drive power terminal are inserted into the control box.
7. The power control device according to claim 4, wherein the power control device is connected to the control device.