JPH11121415A - Wafer cleaning device - Google Patents
Wafer cleaning deviceInfo
- Publication number
- JPH11121415A JPH11121415A JP28030897A JP28030897A JPH11121415A JP H11121415 A JPH11121415 A JP H11121415A JP 28030897 A JP28030897 A JP 28030897A JP 28030897 A JP28030897 A JP 28030897A JP H11121415 A JPH11121415 A JP H11121415A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cleaning
- cell
- cleaning cell
- piping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ウエハ洗浄装置に
関するものである。[0001] The present invention relates to a wafer cleaning apparatus.
【０００２】[0002]
【従来の技術】従来、この種のウエハ洗浄装置として
は、以下に示すようなものがあった。図７は従来のウエ
ハ洗浄システムの概略構成図、図８はそのウエハ洗浄槽
へのウエハのセット状態を示す斜視図、図９はそのウエ
ハ洗浄槽内にセットされるウエハ保持治具の斜視図、図
１０はそのウエハ洗浄槽へのウエハセット状態を示す斜
視図である。2. Description of the Related Art Heretofore, as a wafer cleaning apparatus of this type, there has been the following apparatus. FIG. 7 is a schematic configuration diagram of a conventional wafer cleaning system, FIG. 8 is a perspective view showing a state of setting a wafer in the wafer cleaning tank, and FIG. 9 is a perspective view of a wafer holding jig set in the wafer cleaning tank. FIG. 10 is a perspective view showing a state where a wafer is set in the wafer cleaning tank.
【０００３】図７において、１０１は洗浄すべきウエ
ハ、１０２は洗浄槽、１０３はポンプ、１０４はフィル
タ、１０５は配管、１０６は洗浄液である。このよう
に、洗浄液１０６の入った洗浄槽１０２にウエハ１０１
を浸漬し洗浄を行う構成であった。その場合、洗浄槽へ
のウエハのセットは、図８及び図９に示すように、ウエ
ハ２０１はロボット２０４のアーム２０５に把持され
て、洗浄槽２０２内に配置されるウエハ保持治具２０３
に位置決めされた後、図１０に示すように、ウエハ２０
１は、そのウエハ保持治具２０３にセットされる。In FIG. 7, 101 is a wafer to be cleaned, 102 is a cleaning tank, 103 is a pump, 104 is a filter, 105 is a pipe, and 106 is a cleaning liquid. Thus, the wafer 101 is placed in the cleaning tank 102 containing the cleaning liquid 106.
And immersion for washing. In this case, as shown in FIGS. 8 and 9, the wafer 201 is set in the cleaning tank 202 by holding the wafer 201 by the arm 205 of the robot 204.
Then, as shown in FIG.
1 is set on the wafer holding jig 203.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記し
た従来のウエハ洗浄装置では、ウエハの大口径化に伴
い、膨大な排気、薬品、純水、排水が必要であり、ま
た、供給される電力の消費も大きくなり、工場の設備も
大きくなる。また、超音波を利用した微粒子を除去する
洗浄を行う場合には、ウエハの表裏に超音波を照射でき
ない等の問題点があった。However, in the above-described conventional wafer cleaning apparatus, enormous exhaust, chemicals, pure water, and drainage are required as the diameter of the wafer increases, and the supplied electric power is reduced. Consumption will also increase and plant equipment will also increase. Further, in the case of performing cleaning using ultrasonic waves to remove fine particles, there has been a problem that ultrasonic waves cannot be applied to the front and back of the wafer.
【０００５】本発明は、上記問題点を除去し、構成を簡
素化するとともに、省エネルギー化を図ることができる
ウエハ洗浄装置を提供することを目的とする。An object of the present invention is to provide a wafer cleaning apparatus which eliminates the above problems, simplifies the configuration, and can save energy.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔１〕ウエハ洗浄装置において、ウエハの厚さ程度の厚
みが薄い断面積が小さい洗浄セルと、この洗浄セルに連
通するとともに、この洗浄セルの断面積より大きい断面
積を有する配管とを備え、前記ウエハに洗浄液の流通圧
力を付与して供給しウエハの洗浄を行うようにしたもの
である。In order to achieve the above object, the present invention provides: [1] In a wafer cleaning apparatus, there is provided a cleaning cell having a small cross-sectional area having a small thickness of about the thickness of a wafer; And a pipe having a cross-sectional area larger than the cross-sectional area of the cleaning cell. The cleaning liquid is supplied to the wafer by applying a flow pressure of the cleaning liquid, and the cleaning liquid is supplied to the wafer.
【０００７】したがって、ウエハが大口径化しても、洗
浄セルとウエハの間隙及び配管中にある微小な洗浄液で
洗浄を行うことができ、純水、薬品、電気（ヒータ用）
排液、排気等を極小化することができ、工場のファシリ
ティを小さくすることができる。 〔２〕上記〔１〕記載のウエハ洗浄装置において、前記
洗浄セルの出口にバルブを設け、前記洗浄セル内に圧力
を印加するようにしたものである。Therefore, even if the diameter of the wafer is increased, the cleaning can be performed with the fine cleaning liquid in the gap between the cleaning cell and the wafer and in the piping, and pure water, chemicals, electricity (for heater) can be used.
Drainage, exhaust, and the like can be minimized, and the facility in the factory can be reduced. [2] In the wafer cleaning apparatus according to the above [1], a valve is provided at an outlet of the cleaning cell so as to apply pressure to the inside of the cleaning cell.
【０００８】したがって、上記〔１〕の効果に加えて、
洗浄セル内の圧力が上昇することにより、洗浄液の反応
を向上させ、洗浄力を向上させることができる。 〔３〕上記〔１〕又は〔２〕記載のウエハ洗浄装置にお
いて、前記洗浄セルの外部に超音波発振用振動子を配置
するようにしたものである。したがって、上記〔１〕の
効果に加えて、ウエハの表裏に垂直に超音波が当たるた
め、微粒子の除去効率を向上させることができる。Therefore, in addition to the above effect [1],
By increasing the pressure in the cleaning cell, the reaction of the cleaning liquid can be improved, and the cleaning power can be improved. [3] In the wafer cleaning apparatus according to the above [1] or [2], an ultrasonic oscillation vibrator is arranged outside the cleaning cell. Therefore, in addition to the effect of the above [1], since ultrasonic waves are vertically applied to the front and back of the wafer, the efficiency of removing fine particles can be improved.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照しながら詳細に説明する。図１は本発明の
第１実施例を示すウエハ洗浄装置の要部斜視図、図２は
そのウエハ洗浄装置の蓋体を外した内部を示す斜視図、
図３はそのウエハ洗浄装置の模式断面図、図４はそのウ
エハ洗浄システムの概略構成図である。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a perspective view of a main part of a wafer cleaning apparatus showing a first embodiment of the present invention, FIG. 2 is a perspective view showing the inside of the wafer cleaning apparatus with a lid removed,
FIG. 3 is a schematic sectional view of the wafer cleaning apparatus, and FIG. 4 is a schematic configuration diagram of the wafer cleaning system.
【００１０】これらの図に示すように、この実施例のウ
エハ洗浄装置は、洗浄液３が通る配管２とウエハ１をセ
ットする洗浄セル６から構成されており、この洗浄セル
６は厚みが極めて薄く構成されている。つまり、ウエハ
１の厚さ及び口径より大きい間隙を持つ洗浄セル６にウ
エハ１（枚葉式）をセットする。そこで、配管２は洗浄
セル６の断面積より大きい断面積を有するので、洗浄セ
ル６内には洗浄液３を配管２の圧力より高い圧力を付与
して供給し、ウエハ１に対して圧力がかかるように供給
する。As shown in these figures, the wafer cleaning apparatus of this embodiment comprises a pipe 2 through which a cleaning liquid 3 passes and a cleaning cell 6 for setting the wafer 1. The cleaning cell 6 is extremely thin. It is configured. That is, the wafer 1 (single wafer type) is set in the cleaning cell 6 having a gap larger than the thickness and the diameter of the wafer 1. Therefore, since the pipe 2 has a cross-sectional area larger than the cross-sectional area of the cleaning cell 6, the cleaning liquid 3 is supplied into the cleaning cell 6 by applying a pressure higher than the pressure of the pipe 2, and the pressure is applied to the wafer 1. Supply as follows.
【００１１】このように、第１実施例によれば、ウエハ
が大口径化しても、洗浄セル６とウエハ１の間隙及び配
管中にある微小な洗浄液３で洗浄を行うことができるの
で、従来の問題点であった、純水、薬品、電気（ヒータ
用）排液、排気等を極小化することができ、工場の設備
を小型化することができる。ここで、ウエハ１は、例え
ば、図２に示すように、洗浄セル６内にウエハ保持部１
０が配置されており、そのウエハ保持部１０にウエハ１
が保持されてセットされ、それに蓋体７を被せる。８は
その蓋体の取っ手、９はウエハ保持部１０の頭部１０Ａ
に嵌まる開口である。As described above, according to the first embodiment, even if the diameter of the wafer is increased, the cleaning can be performed with the minute cleaning liquid 3 in the gap between the cleaning cell 6 and the wafer 1 and in the piping. Problems such as pure water, chemicals, electric (for heater) drainage, exhaust, etc., can be minimized, and the plant equipment can be miniaturized. Here, for example, as shown in FIG. 2, the wafer 1 is
0, and the wafer 1 is
Is held and set, and the lid 7 is put on it. 8 is a handle of the lid, 9 is the head 10A of the wafer holder 10.
An opening that fits into
【００１２】そこで、洗浄されたウエハは、蓋体７が外
されて、そのウエハ１はロボットのアーム（図示なし）
で把持されて、または吸着アームにより吸着されて、次
の工程に搬送される。なお、ここでは、洗浄のみの工程
について述べたが、洗浄後に引続き、乾燥を行うように
してもよい。そこで、このウエハ洗浄システムの動作例
について図１〜図４を参照しながら説明する。Then, the lid 7 is removed from the washed wafer, and the wafer 1 is placed on a robot arm (not shown).
, Or sucked by the suction arm and transported to the next step. Note that, here, the step of only cleaning is described, but drying may be performed subsequently after cleaning. Therefore, an operation example of the wafer cleaning system will be described with reference to FIGS.
【００１３】まず、ポンプ４から押し出される洗浄液３
は、フィルタ５を介して配管２から厚みの薄い断面積の
小さい洗浄セル６中のウエハ１に圧力がかかるようにし
て流れる。そこでは、配管２中にある微小な洗浄液３で
効率的にウエハ１の洗浄を行うことができる。ウエハの
洗浄を行った洗浄水は再びポンプに戻されて、送り出さ
れ、フィルタ５で清浄化されて、洗浄セル６におけるウ
エハ１の洗浄を行う。First, the cleaning liquid 3 pushed out from the pump 4
Flows from the pipe 2 through the filter 5 so that pressure is applied to the wafer 1 in the cleaning cell 6 having a small cross section and a small thickness. Here, the wafer 1 can be efficiently cleaned with the minute cleaning liquid 3 in the pipe 2. The cleaning water that has performed the cleaning of the wafer is returned to the pump again, is sent out, is cleaned by the filter 5, and cleans the wafer 1 in the cleaning cell 6.
【００１４】なお、この実施例の場合は、循環式の例で
あるが、洗浄セル６において洗浄を行った洗浄水は、排
液とするようにしてもよい。次に、本発明の第２実施例
について説明する。図５は本発明の第２実施例を示すウ
エハ洗浄装置の模式構成図である。なお、第１実施例と
同じ部分には同じ符号を付してその説明は省略する。Although this embodiment is an example of a circulation type, the washing water washed in the washing cell 6 may be drained. Next, a second embodiment of the present invention will be described. FIG. 5 is a schematic configuration diagram of a wafer cleaning apparatus according to a second embodiment of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
【００１５】この実施例では、上記した第１実施例のウ
エハ洗浄装置において、洗浄セル６の洗浄液３出口側に
バルブ１１を設け、洗浄液３の流れを停止させ、洗浄セ
ル６内に更に圧力を印加するようにしたものである。図
５に示すように、洗浄セル６内にウエハ１をセットし、
所望の洗浄液３で洗浄セル６内が満たされたら、バルブ
１１により、洗浄液３の流れを停止させる。洗浄液の流
れを停止することにより、洗浄セル６内の圧力が上昇す
る。In this embodiment, in the wafer cleaning apparatus of the first embodiment described above, a valve 11 is provided at the cleaning liquid 3 outlet side of the cleaning cell 6 to stop the flow of the cleaning liquid 3, and the pressure inside the cleaning cell 6 is further increased. This is applied. As shown in FIG. 5, the wafer 1 is set in the cleaning cell 6,
When the inside of the washing cell 6 is filled with the desired washing liquid 3, the flow of the washing liquid 3 is stopped by the valve 11. By stopping the flow of the cleaning liquid, the pressure in the cleaning cell 6 increases.
【００１６】このように、第２実施例によれば、洗浄セ
ル６内の圧力が上昇することにより、Ｈ2 ＳＯ4 とＨ2
Ｏ2 、ＮＨ4 ＯＨとＨ2 Ｏ2 、Ｈｃｌ／Ｈ2 Ｏ2 等の洗
浄液の反応を向上させ、洗浄力を向上させることができ
る。次に、本発明の第３実施例について説明する。図６
は本発明の第３実施例を示すウエハ洗浄装置の模式構成
図である。なお、第１実施例と同じ部分には同じ符号を
付してその説明は省略する。As described above, according to the second embodiment, as the pressure in the cleaning cell 6 increases, H 2 SO 4 and H 2
The reaction between O 2 and NH 4 OH and a cleaning solution such as H 2 O 2 and Hcl / H 2 O 2 can be improved, and the cleaning power can be improved. Next, a third embodiment of the present invention will be described. FIG.
FIG. 9 is a schematic configuration diagram of a wafer cleaning apparatus showing a third embodiment of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
【００１７】この実施例では、上記第１又は第２実施例
のウエハ洗浄装置において、ウエハ１の表側及び裏側に
超音波発振用振動子２１を配置するようにしたものであ
る。図６に示すように、洗浄セル６内にウエハ１をセッ
トし、洗浄液３を供給することにより、ウエハ１を洗浄
する。その洗浄の際に、超音波発振用振動子２１をウエ
ハの表裏側に配置して、これを駆動して超音波振動によ
り洗浄力を高める。In this embodiment, in the wafer cleaning apparatus of the first or second embodiment, the ultrasonic oscillators 21 are arranged on the front side and the back side of the wafer 1. As shown in FIG. 6, the wafer 1 is set in the cleaning cell 6 and the cleaning liquid 3 is supplied to wash the wafer 1. At the time of the cleaning, the ultrasonic oscillators 21 are arranged on the front and back sides of the wafer, and are driven to increase the cleaning power by ultrasonic vibration.
【００１８】このように、第３実施例によれば、ウエハ
の表裏側に垂直に超音波が当たるため、微粒子の除去効
率を更に向上させることができる。また、上記第１実施
例では洗浄装置に適用した例を説明したが、液体及び気
体のレーザー微粒子測定装置の測定セルに、本洗浄セル
の構造を用いれば、同じサンプリング量で微粒子の測定
確率が向上する。As described above, according to the third embodiment, the ultrasonic waves are applied perpendicularly to the front and back sides of the wafer, so that the efficiency of removing fine particles can be further improved. In the first embodiment described above, an example in which the present invention is applied to a cleaning apparatus has been described. However, if the structure of the present cleaning cell is used as a measuring cell of a liquid and gas laser fine particle measuring apparatus, the measurement probability of fine particles can be increased with the same sampling amount. improves.
【００１９】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。It should be noted that the present invention is not limited to the above embodiment, but various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
【００２０】[0020]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。 （１）請求項１記載の発明によれば、ウエハが大口径化
しても、洗浄セルとウエハの間隙及び配管中にある微小
な洗浄液で洗浄を行うことができ、純水、薬品、電気
（ヒータ用）排液、排気等を極小化することができ、工
場の設備の小型化を図ることができる。As described above, according to the present invention, the following effects can be obtained. (1) According to the first aspect of the present invention, even if the diameter of the wafer is increased, the cleaning can be performed with the fine cleaning liquid in the gap between the cleaning cell and the wafer and in the piping, and pure water, chemicals, electricity ( Drainage, exhaust, etc. (for heater) can be minimized, and downsizing of factory equipment can be achieved.
【００２１】（２）請求項２記載の発明によれば、上記
（１）の効果に加えて、洗浄セル内の圧力が上昇するこ
とにより、洗浄液の反応を向上させ、洗浄力を向上させ
ることができる。 （３）請求項３記載の発明によれば、上記（１）の効果
に加えて、ウエハの表裏に垂直に超音波が当たるため、
微粒子の除去効率を向上させることができる。(2) According to the second aspect of the invention, in addition to the effect of the above (1), by increasing the pressure in the cleaning cell, the reaction of the cleaning liquid is improved, and the cleaning power is improved. Can be. (3) According to the third aspect of the invention, in addition to the effect of the above (1), since the ultrasonic wave is vertically applied to the front and back of the wafer,
The efficiency of removing fine particles can be improved.
【図１】本発明の第１実施例を示すウエハ洗浄装置の要
部斜視図である。FIG. 1 is a perspective view of a main part of a wafer cleaning apparatus according to a first embodiment of the present invention.
【図２】本発明の第１実施例を示す蓋体を外した内部を
示す斜視図である。FIG. 2 is a perspective view showing the inside of the first embodiment of the present invention with the lid removed.
【図３】本発明の第１実施例を示すウエハ洗浄装置の模
式断面図である。FIG. 3 is a schematic sectional view of a wafer cleaning apparatus according to the first embodiment of the present invention.
【図４】本発明の第１実施例を示すウエハ洗浄システム
の概略構成図である。FIG. 4 is a schematic configuration diagram of a wafer cleaning system showing a first embodiment of the present invention.
【図５】本発明の第２実施例を示すウエハ洗浄装置の模
式構成図である。FIG. 5 is a schematic configuration diagram of a wafer cleaning apparatus according to a second embodiment of the present invention.
【図６】本発明の第３実施例を示すウエハ洗浄装置の模
式構成図である。FIG. 6 is a schematic configuration diagram of a wafer cleaning apparatus according to a third embodiment of the present invention.
【図７】従来のウエハ洗浄システムの概略構成図であ
る。FIG. 7 is a schematic configuration diagram of a conventional wafer cleaning system.
【図８】従来のウエハ洗浄槽へのウエハのセット状態を
示す斜視図である。FIG. 8 is a perspective view showing a state where a wafer is set in a conventional wafer cleaning tank.
【図９】従来のウエハ洗浄槽内にセットされるウエハ保
持治具の斜視図である。FIG. 9 is a perspective view of a wafer holding jig set in a conventional wafer cleaning tank.
【図１０】従来のウエハ洗浄槽へのウエハセット状態を
示す斜視図である。FIG. 10 is a perspective view showing a state where a wafer is set in a conventional wafer cleaning tank.
１ ウエハ ２ 配管 ３ 洗浄液 ４ ポンプ ５ フィルタ ６ 洗浄セル ７ 蓋体 ８ 取っ手 ９ 開口 １０ ウエハ保持部 １０Ａ 頭部 １１ バルブ ２１ 超音波発振用振動子 DESCRIPTION OF SYMBOLS 1 Wafer 2 Piping 3 Cleaning liquid 4 Pump 5 Filter 6 Cleaning cell 7 Lid 8 Handle 9 Opening 10 Wafer holding part 10A Head 11 Valve 21 Ultrasonic oscillator
Claims (3)
積が小さい洗浄セルと、（ｂ）該洗浄セルに連通すると
ともに、該洗浄セルの断面積より大きい断面積を有する
配管とを備え、（ｃ）前記ウエハに洗浄液の流通圧力を
付与して供給しウエハの洗浄を行うことを特徴とするウ
エハ洗浄装置。1. A cleaning cell having a small cross-sectional area, which is as thin as the thickness of a wafer, and (b) a pipe communicating with the cleaning cell and having a cross-sectional area larger than the cross-sectional area of the cleaning cell. (C) a wafer cleaning apparatus, wherein the wafer is cleaned by supplying the cleaning liquid to the wafer under a flow pressure and supplying the cleaning liquid.
て、前記洗浄セルの出口にバルブを設け、前記洗浄セル
内に圧力を印加することを特徴とするウエハ洗浄装置。2. The wafer cleaning apparatus according to claim 1, wherein a valve is provided at an outlet of the cleaning cell, and pressure is applied to the inside of the cleaning cell.
おいて、前記洗浄セルの外部に超音波発振用振動子を配
置することを特徴とするウエハ洗浄装置。3. The wafer cleaning apparatus according to claim 1, wherein an ultrasonic oscillator is arranged outside the cleaning cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28030897A JP3481433B2 (en) | 1997-10-14 | 1997-10-14 | Wafer cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28030897A JP3481433B2 (en) | 1997-10-14 | 1997-10-14 | Wafer cleaning equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002358288A Division JP3648226B2 (en) | 2002-12-10 | 2002-12-10 | Wafer cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11121415A true JPH11121415A (en) | 1999-04-30 |
| JP3481433B2 JP3481433B2 (en) | 2003-12-22 |
Family
ID=17623191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28030897A Expired - Fee Related JP3481433B2 (en) | 1997-10-14 | 1997-10-14 | Wafer cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3481433B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002224627A (en) * | 2001-02-05 | 2002-08-13 | Tokyo Electron Ltd | Method and apparatus for cleaning substrate |
| JP2007136248A (en) * | 2004-12-10 | 2007-06-07 | Arakawa Chem Ind Co Ltd | Fixture for washing sheet-like parts, washing apparatus and washing method |
| US8206548B2 (en) | 2007-03-29 | 2012-06-26 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
-
1997
- 1997-10-14 JP JP28030897A patent/JP3481433B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002224627A (en) * | 2001-02-05 | 2002-08-13 | Tokyo Electron Ltd | Method and apparatus for cleaning substrate |
| JP2007136248A (en) * | 2004-12-10 | 2007-06-07 | Arakawa Chem Ind Co Ltd | Fixture for washing sheet-like parts, washing apparatus and washing method |
| US8206548B2 (en) | 2007-03-29 | 2012-06-26 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3481433B2 (en) | 2003-12-22 |
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