JPH11121355A - 投影露光装置および露光方法 - Google Patents

投影露光装置および露光方法

Info

Publication number
JPH11121355A
JPH11121355A JP9293404A JP29340497A JPH11121355A JP H11121355 A JPH11121355 A JP H11121355A JP 9293404 A JP9293404 A JP 9293404A JP 29340497 A JP29340497 A JP 29340497A JP H11121355 A JPH11121355 A JP H11121355A
Authority
JP
Japan
Prior art keywords
illumination
intensity distribution
exposure apparatus
projection
projection exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9293404A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11121355A5 (enExample
Inventor
Masayuki Murayama
正幸 村山
Yuji Imai
裕二 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP9293404A priority Critical patent/JPH11121355A/ja
Publication of JPH11121355A publication Critical patent/JPH11121355A/ja
Publication of JPH11121355A5 publication Critical patent/JPH11121355A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP9293404A 1997-10-09 1997-10-09 投影露光装置および露光方法 Pending JPH11121355A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9293404A JPH11121355A (ja) 1997-10-09 1997-10-09 投影露光装置および露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9293404A JPH11121355A (ja) 1997-10-09 1997-10-09 投影露光装置および露光方法

Publications (2)

Publication Number Publication Date
JPH11121355A true JPH11121355A (ja) 1999-04-30
JPH11121355A5 JPH11121355A5 (enExample) 2005-06-23

Family

ID=17794340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9293404A Pending JPH11121355A (ja) 1997-10-09 1997-10-09 投影露光装置および露光方法

Country Status (1)

Country Link
JP (1) JPH11121355A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005294840A (ja) * 2004-03-31 2005-10-20 Asml Holding Nv フィールド高さ及び瞳の変更を許容する照明システム及び方法
JP2010500770A (ja) * 2006-08-16 2010-01-07 カール・ツァイス・エスエムティー・アーゲー 半導体リソグラフィ用光学系

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005294840A (ja) * 2004-03-31 2005-10-20 Asml Holding Nv フィールド高さ及び瞳の変更を許容する照明システム及び方法
JP2010500770A (ja) * 2006-08-16 2010-01-07 カール・ツァイス・エスエムティー・アーゲー 半導体リソグラフィ用光学系
US8269947B2 (en) 2006-08-16 2012-09-18 Carl Zeiss Smt Gmbh Optical system for semiconductor lithography
KR101470658B1 (ko) * 2006-08-16 2014-12-08 칼 짜이스 에스엠테 게엠베하 반도체 리소그래피용 광학 시스템
US9383544B2 (en) 2006-08-16 2016-07-05 Carl Zeiss Smt Gmbh Optical system for semiconductor lithography

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